JP2000277001A - Cold cathode electric field electron emission element and manufacture thereof, and cold cathode electric field electron emission display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To decrease a drive voltage of an edge type field emission element by improving a confinement effect of an electrolysis in an aperture part. SOLUTION: An electron emission layer 13, an insulation layer 14 and a gate electrode layer 15 are laminated on a supporting body 10 in this order. An aperture part 16 is provided which reaches the surface of the supporting body 10 from the gate electrode layer 15. The aperture part 16 comprises a first aperture part 15A provided in the gate electrode layer 15 and a second aperture part 14A provided at the insulation layer 14 and a third aperture part 13A provided at the electron emission layer 13. The first aperture part 15A and the second aperture part 14A and the third aperture part 13A are communicated with each other. An aperture end of the third aperture part 13A from which electrons are emited is retreated from an aperture end of the first aperture part 15A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cold cathode field emission device having excellent electron emission efficiency, a method of manufacturing the same, and a cold cathode field emission display incorporating such a cold cathode field emission device.

[0002]

2. Description of the Related Art Various types of flat-panel (flat-panel) display devices have been studied as image display devices to replace the current mainstream cathode ray tube (CRT). Examples of such a flat display device include a liquid crystal display (LCD), an electroluminescence display (ELD), and a plasma display (PDP). Also, a cold cathode field emission display (FED) capable of emitting electrons from a solid into a vacuum without thermal excitation has been proposed, and the brightness of the screen and low power consumption have been proposed. From the viewpoint of attention.

[0003] A cold cathode field emission display (hereinafter sometimes simply referred to as a display) generally includes a cathode panel having an electron emission region corresponding to each pixel arranged in a two-dimensional matrix, An anode panel having a phosphor layer that emits light by being excited by collision with electrons emitted from the electron emission region is arranged to face each other via a vacuum layer. In each electron emission region on the cathode panel, for example, a plurality of electron emission portions are formed, and further, a gate electrode layer for extracting electrons from the electron emission portions is formed. The portion having the electron emission portion and the gate electrode layer is a cold cathode field emission device, and may be simply referred to as a field emission device hereinafter.

In order to obtain a large emission electron current at a low drive voltage in the structure of such a display device, for example, the tip of the electron emission portion of the field emission element must be sharply pointed, and the individual electron emission It is necessary to reduce the size of the portion to increase the density of the electron-emitting portion in a section corresponding to one pixel, and to reduce the distance between the tip of the electron-emitting portion and the gate electrode layer. Therefore, in order to realize these, field emission devices having various configurations have been conventionally proposed.

A typical example of such a conventional field emission device is a so-called Spindt-type field emission device (hereinafter referred to as a Spindt-type device) in which an electron emission portion is constituted by an electron emission electrode formed of a conical conductor. ) Are known. FIG. 21 is a conceptual diagram of a display device incorporating this Spindt-type element. A cathode panel of this display device includes a cathode electrode 41 formed on an insulating substrate 40,
An interlayer insulating layer formed on an insulating substrate including the cathode electrode; a gate electrode layer formed on the interlayer insulating layer; an opening provided in the gate electrode layer and the interlayer insulating layer; It has a conical electron emission electrode 45 formed therein. Usually, a predetermined number of the electron emission electrodes 45 form one electron emission region, and this electron emission region corresponds to one of the pixels arranged in a two-dimensional matrix. On the other hand, the anode panel has a structure in which a phosphor layer 52 is formed on a substrate 50 in a predetermined pattern, and the phosphor layer 52 is covered with an anode electrode 51.

When a voltage is applied between the electron emission electrode 45 and the gate electrode layer 44, electrons are extracted from the tip of the electron emission electrode 45 by the resulting electric field. The electrons are attracted to the anode electrode 51 of the anode panel, and collide with the phosphor layer 52, which is a light emitting layer formed between the anode electrode 51 and the substrate 50. As a result, the phosphor layer 52 is excited to emit light, and a desired image can be obtained. The operation of the cold cathode field emission device is basically controlled by a voltage applied to the gate electrode layer 44.

An outline of a method for manufacturing such a Spindt-type element will be described below with reference to FIGS. This manufacturing method is basically a method of forming a conical electron emission electrode 45 by vertical vapor deposition of a metal material. That is,
The vapor deposition particles are vertically incident on the opening 43, but the amount of the vapor deposition particles reaching the bottom of the opening 43 is reduced by utilizing the shielding effect of the overhanging deposit formed near the opening end. The electron emission electrode 45, which is a conical deposit, is formed in a self-aligned manner. Here, a method of forming a peeling layer 46 on the gate electrode layer 44 in advance to facilitate the removal of unnecessary overhang-like deposits will be described. In the following description, the insulating substrate and any structures formed thereon at the stage when an arbitrary process is completed may be collectively referred to as a “base”.

[Step-10] First, as shown in FIG.
As described above, on an insulating substrate 40 made of, for example, a glass substrate,
Formed a cathode electrode 41 made of niobium (Nb).
Later, the SiO _TwoInterlayer insulating layer 42 made of conductive material
A gate electrode layer 44 made of a material is sequentially formed, and then
Pattern the gate electrode layer 44 and the interlayer insulating layer 42
Thus, the opening 43 is formed.

[Step-20] Next, as shown in FIG. 22B, a release layer 46 is formed by obliquely depositing aluminum on the substrate. At this time, by selecting a sufficiently large incident angle of the vapor-deposited particles with respect to the normal line of the base, it is possible to form the peeling layer 46 on the gate electrode layer 44 without substantially depositing aluminum on the bottom of the opening 43. Can be. The release layer 46 is formed in the opening 43.
Projecting from the opening end of the opening 43 in an eaves shape, whereby the diameter of the opening 43 is substantially reduced.

[Step-30] Next, for example, molybdenum (Mo) is vertically deposited on the entire surface of the substrate. At this time, as shown in FIG. 23A, as the metal layer 45A having the overhang shape grows on the release layer 46, the substantial diameter of the opening 43 is gradually reduced. The vapor deposition particles contributing to the deposition at the bottom of the opening 43 are gradually limited to those passing near the center of the opening 43. As a result, a conical deposit is formed at the bottom of the opening 43, and the conical deposit becomes the electron emission electrode 45.

[Step-40] Thereafter, as shown in FIG. 23B, the peeling layer 46 is peeled off from the surface of the gate electrode layer 44 by an electrochemical process and a wet process.
The metal layer 45A above the gate electrode layer 44 is selectively removed.

The electron emission characteristics of the field emission device having the structure shown in FIG. 23B are as follows: from the edge 43 A of the gate electrode layer 44 forming the upper end of the opening 43 to the tip of the electron emission electrode 45. Greatly depends on the distance. And
This distance depends on the processing accuracy of the shape of the opening 43, the dimensional accuracy of the diameter, and the metal layer 45A formed in [Step-30].
, And the shape accuracy of the release layer 46 serving as an underlayer.

However, the metal layer 45A having a uniform film thickness over the entire substrate having a large area is actually formed by vertical evaporation, or the release layer 4 having an eaves shape having a uniform size is formed.
It is extremely difficult to form 6 by oblique deposition, and a certain degree of in-plane variation and lot-to-lot variation cannot be avoided. This variation causes variation in image display characteristics of the display device, for example, brightness of an image. Moreover,
The necessity of a large-sized vapor deposition device, a decrease in throughput, and the removal of the release layer 46 formed over a large area, the residue causes contamination of the cathode panel, and the production yield of the display device. There is also a problem such as lowering.

On the other hand, a so-called edge type field emission device (hereinafter referred to as an edge type device) is known as a field emission device which can solve these disadvantages of the Spindt type device. This is because instead of a conical electron emission electrode in a Spindt-type element, an electron emission layer formed in a plane parallel to an insulating substrate is laminated with a gate electrode layer via an insulating layer, and an opening is formed in the laminate. This is an element of a type in which the tip (edge) of the electron emission layer exposed on the wall surface of the opening is projected from the wall surface by some method and used as an electron emission portion.

For example, US Pat. No. 5,214,347 discloses a structure capable of applying a strong electric field to an electron emitting layer by sandwiching the upper and lower portions of the electron emitting layer between a pair of gate electrode layers via an insulating layer. I have. That is, as shown in FIG. 24, a conductive layer 61, a first insulating layer 62, a lower gate electrode layer 63, a second insulating layer 64, and an electron emitting layer 6 are formed on an insulating substrate 60.
An opening 68 is provided in a stacked body in which the fifth insulating layer 66 and the upper gate electrode layer 67 are sequentially stacked. Then, electrons e emitted from the tip of the electron emission layer 65 protruding from the wall surface of the opening 68 are led out of the opening 68. The radius of curvature of the tip portion of the electron emission layer 65 is reduced by reducing the film thickness by isotropic etching, thereby increasing the electron emission density. The conductive film 69 disposed on the upper gate electrode layer 67, the electron emission layer 65, and the lower gate electrode layer 63 faces the electron emission layer 6.
5 constitutes an electrode for attracting electrons emitted from the conductive layer 5, and has a conductive layer 61 exposed at the bottom of the opening 68.
Are provided for the purpose of surface protection, stabilization of potential, prevention of dielectric breakdown and noise.

[0016]

In the edge type device, the distance from the edge of the gate electrode layer to the electron emission layer can be substantially determined by the thickness of the insulating layer. In this sense, the disadvantages of the Spindt-type element are considerably eliminated. Therefore, it is easy to make the electron emission characteristics of the electron emission portion uniform even on a large-sized substrate, and the brightness of the image of the display device can be made uniform. However, the shape of the electron-emitting portion is not a sharp "point" as in Spindt-type devices but a "line", and the gate electrode layer accompanying the shape of the electron-emitting portion is more than that in the case of Spindt-type devices. Since the opening is large, the effect of confining the electric field inside the opening is weakened, and electric field concentration is unlikely to occur near the electron emission portion. In other words, the edge-type device has a lower electron emission efficiency than the Spindt-type device, and requires a higher gate voltage to obtain the same emission electron current as the Spindt-type device. It is difficult to reduce power.

Also, unlike a Spindt-type element in which the tip of the electron-emitting electrode is sharpened in the direction of the anode electrode and emitted electrons can proceed substantially straight toward the anode electrode, the electron-emitting portion of the edge-type element has Because of the protrusion from the side wall of the opening, a part of the emitted electrons may travel below the plane of the electron emission layer, that is, in the direction opposite to the anode electrode. When the electrons that have proceeded downward collide with an obstacle in the opening in this way, they themselves become recoil electrons, or secondary electrons are knocked out from the surface of the obstacle. These recoil electrons and secondary electrons can also ultimately contribute to light emission if attracted to the anode electrode and collide with the phosphor layer. However, the energy distribution width of recoil electrons and secondary electrons is wider than the energy distribution width of electrons emitted from the tip of the electron emission electrode and directly traveling toward the anode electrode. In some structures, it may be difficult to control the trajectories of recoil electrons and secondary electrons so as to collide with a predetermined phosphor layer.

A first object of the present invention is to provide an edge-type cold cathode field emission device which can improve electron emission efficiency and is relatively easy to manufacture, a method of manufacturing the same, and such a cold cathode field emission device. An object of the present invention is to provide a cold cathode field emission display incorporating an electron-emitting device. Further, a second object of the present invention is to provide an edge-type cold cathode field emission device which is excellent in convergence of the trajectory of electrons emitted from the electron emission layer and which is relatively easy to manufacture, a method of manufacturing the same, and Another object of the present invention is to provide a cold cathode field emission display device incorporating such a cold cathode field emission device.

[0019]

According to a first aspect of the present invention, there is provided a cold-cathode field emission device for achieving the above-mentioned first object, comprising: an electron-emitting layer, an insulating layer, a gate electrode layer; Are stacked on the support in this order, an opening is provided from the gate electrode layer to the surface of the support, and the opening is provided in the first opening provided in the gate electrode layer and the insulating layer. The third opening includes a second opening and a third opening provided in the electron emission layer. The first opening, the second opening, and the third opening communicate with each other, and the third opening from which electrons are emitted. The opening end of the portion is recessed from the opening end of the first opening. Here, the opening end of the first opening is, in other words, an edge of the gate electrode layer facing the opening. Also,
The opening end of the third opening is, in other words, the edge of the electron emission layer facing the opening. Therefore, one of the important points of the cold cathode field emission device according to the first embodiment is, in other words, a structure in which the edge of the electron emission layer is recessed from the edge of the gate electrode layer in the opening. is there.

According to a second aspect of the present invention, there is provided a cold cathode field emission device according to the second aspect of the present invention, wherein an electron emission layer, an insulating layer, and a gate electrode layer are formed on a support in this order. An opening that is stacked thereover and reaches from the gate electrode layer to the surface of the support; a first opening provided in the gate electrode layer; a second opening provided in the insulating layer; A third opening provided in the electron emission layer, the first opening, the second opening, and the third opening communicating with each other, and an opening end of the third opening from which electrons are emitted. The thickness decreases toward the front end, and the lower edge of the open end of the third opening is recessed from the upper edge. In other words, one of the important points of the cold cathode field emission device according to the second embodiment is that the portion emitting electrons, that is, the structure in which the edge of the electron emission layer facing the opening has an inverted tapered wall. It is in.

In this specification, the “projection” of the opening end of an opening means that the opening end is located at the center of the opening along the extending direction of the layer provided with the opening. Indicates that it is closer to the position. Further, “retreat” of the opening end of an opening means that the opening end is located farther from the center of the opening along the extending direction of the layer provided with the opening. .

In the cold cathode field emission device according to the first aspect, the fact that the opening end of the third opening is recessed from the opening end of the first opening means that the first opening is supported. This means that the image projected on the body is included in the image projected on the support of the third opening. That is, when the opening of the cold cathode field emission device is viewed from the direction perpendicular to the support, the edge of the electron emission layer is completely hidden behind the gate electrode layer. Therefore, even if the first opening provided in the gate electrode layer is large to some extent, the effect of confining the electric field is hardly reduced,
The electric field intensity in the vicinity of the edge of the electron emission layer can be kept high, so that the gate voltage can be reduced and the power consumption can be reduced. Further, the fact that the opening end of the third opening protrudes from the lower end of the second opening means that the projected image of the third opening on the support is transferred to the support of the lower end of the second opening. Means that it is included in the projected image.

In the cold cathode field emission device according to the first aspect, the amount of retreat of the opening end of the third opening with respect to the opening end of the first opening along the direction in which the electron emission layer extends is X,
Assuming that the distance between the gate electrode layer and the electron emission layer is Y, it is preferable that 0 <X / Y ≦ 1.7. X / Y
When the value exceeds 1.7, electrons emitted from the electron emission layer collide with the gate electrode, and when incorporated in a display device described later, there is a high possibility that electrons cannot be extracted to the anode electrode side. More preferably, 0.4 ≦ X / Y ≦ 1.2. The cold cathode field emission device according to the second aspect is different from the cold cathode field emission device according to the first aspect in that the upper edge of the opening end of the third opening and the opening end of the first opening are different. Is not particularly limited.

In the cold cathode field emission device according to the first embodiment, it is preferable that the opening end of the third opening protrudes from the lower end of the second opening, and the second embodiment In the cold cathode field emission device according to the above, it is preferable that the upper edge of the opening end of the third opening protrudes from the lower end of the second opening. That is, the opening end of the third opening is a portion that actually emits electrons, and it is preferable that this portion protrudes rather than is buried in the insulating layer from the viewpoint of increasing electron emission efficiency. .

In the cold cathode field emission device according to the first aspect, it is more preferable that the thickness of the opening end of the third opening is reduced toward the tip. Third
The thickness of the open end of the opening may decrease from the upper edge to the lower edge (ie, forward tapered) or decrease from the lower edge to the upper edge (ie, reverse tapered). Alternatively, it may decrease from both the upper and lower edges, and the mode of the decrease may be monotonic or gradual.

On the other hand, in the cold cathode field emission device according to the second aspect, when viewed in a cross section perpendicular to the support, the opening end of the third opening is a lower edge with respect to the upper edge of the opening end. Has a taper angle θ corresponding to the degree of receding. The magnitude of the taper angle θ is preferably approximately 10 ° ≦ θ ≦ 80 °, and furthermore, 20 ° ≦ θ ≦ 70 ° in consideration of the convergence of the emitted electron orbit and the mechanical strength of the electron emission layer. Is more preferable. When the taper angle θ of the opening end is substantially within the above range, it is possible to effectively increase the electric field intensity near the opening end and direct most of the electrons emitted from the upper edge to the outside of the opening. It becomes possible. In addition, the manner of decreasing the thickness of the opening end of the third opening may be monotonous or stepwise.

In the cold cathode field emission devices according to the first and second embodiments, the first opening, the second opening, and the third opening preferably have similar shapes in plan view. May have different plane shapes as long as the geometric condition of is satisfied. Examples of the planar shape of these openings include a circle, an ellipse, and an n-gon (where n is an integer of 3 or more). n-gon is positive n
It does not have to be a square, and its vertices may be rounded. Among the n-sided polygons, rectangles are particularly preferable. In this case, the long side of the rectangle is approximately 100 μm, and the short side is several μm.
Preferably, it is selected to be about m to 10 μm.

In the cold cathode field emission devices according to the first and second embodiments, other electrode layers than the above-mentioned electron emission layer and gate electrode layer may or may not be provided. The case where there is no other electrode layer is the case where the support is, for example, an insulating substrate. The cold cathode field emission device in this case has a configuration in which, for example, an electron emission layer is formed directly on an insulating substrate, and the insulating substrate is exposed at the bottom of the third opening. A concave portion may be provided in a portion of the insulating substrate immediately below the third opening. The planar shape of the recess at this time is preferably congruent or similar to the planar shape of the third opening. As long as it is included, the plane shapes of the concave portion and the third opening may be different from each other.

When the cold cathode field emission device according to the first aspect has a concave portion, the deepest portion of the opening does not end at the third opening provided in the electron emitting layer but extends further below the electron emitting layer. Will be. This forms an electric field intensity distribution that exhibits a strong electric field convex lens effect near the opening,
This is effective in improving the convergence of the emitted electron orbit. Further, in the cold cathode field emission device according to the first aspect, the upper end of the recess is retracted from the opening end of the third opening (that is, the edge of the electron emission layer facing the opening is the wall surface of the recess). , The electron emission efficiency can be increased.

In the cold cathode field emission device according to the second aspect, the upper end of the recess is aligned with the upper edge of the opening end of the third opening, or is retracted from the upper edge, so that the opening is reduced. The edge of the electron emission layer facing the portion can be made to protrude from the side wall surface of the concave portion, and the electron emission efficiency can be increased. In the cold cathode field emission device according to the second aspect, the positional relationship between the upper end of the concave portion and the lower edge of the open end of the third opening is not particularly limited. That is, in the cold cathode field emission device according to the second aspect, the upper end of the concave portion may be located at an intermediate position between the upper edge and the lower edge of the open end of the third opening. May be aligned with the lower edge of the opening end of the third opening, or may be further retracted from the lower edge of the opening end of the third opening.

On the other hand, in the cold cathode field emission devices according to the first embodiment and the second embodiment, the case where there is another electrode layer means that (a) the second gate electrode layer is located below the electron emission layer. In some cases, (b) there is a focusing electrode layer above the gate electrode layer, or (c) there is both the second gate electrode layer and the focusing electrode layer.

In the cold cathode field emission devices of (a) and (c), the support is composed of an insulating substrate, a second gate electrode layer formed on the insulating substrate, and a second gate electrode layer formed on the insulating substrate. And a second insulating layer formed on the insulating substrate, the opening further including a fourth opening provided in the second insulating layer so as to communicate with the third opening. A structure in which the second gate electrode layer is exposed at the bottom can be employed. In this configuration, the second gate electrode layer can apply an electric field to the electron emission layer in cooperation with the gate electrode layer. Therefore, a stronger electric field can be applied to the electron-emitting layer than when the gate electrode layer is provided alone. The planar shape of the fourth opening is preferably congruent or similar to the planar shape of the third opening. Further, in the cold cathode field emission device according to the first aspect, the upper end of the fourth opening is retracted from the opening end of the third opening, so that the edge of the electron emitting layer is closed. The projection can be made to protrude from the side wall surface, and the electron emission efficiency can be increased. Further, in the cold cathode field emission device according to the second aspect, in which the opening end of the third opening has an inverted tapered wall,
By aligning the upper end of the fourth opening with the upper edge of the opening end of the third opening or retreating from the upper edge, the edge of the electron emission layer protrudes from the side wall surface of the fourth opening. And the electron emission efficiency can be increased. In the cold cathode field emission device according to any of the aspects, the fourth
Although the planar shape of the opening is preferably similar to the planar shape of the third opening, the projected image of the upper end of the fourth opening on the surface of the insulating substrate shows the projection of the third opening on the surface of the insulating substrate. As long as a shadow image is included, the plane shapes of the fourth opening and the third opening may be different from each other.

In the cold cathode field emission devices of (b) and (c), the interlayer insulating layer formed on the insulating layer including the gate electrode layer and the interlayer insulating layer formed on the interlayer insulating layer A focusing electrode layer, wherein the opening is a fifth opening provided in the interlayer insulating layer so as to communicate with the first opening;
A configuration may further be provided that further includes a sixth opening provided in the focusing electrode layer so as to communicate with the fifth opening. The planar shape and the magnitude relationship between the first opening provided in the gate electrode layer and the sixth opening provided in the converging electrode layer are not particularly limited, but from the viewpoint of obtaining the electric field convex lens effect, the sixth opening is the third opening. Desirably, it is larger than one opening. In addition, since the potential of the focusing electrode layer is the same as or approximate to the potential of the electron emission layer, if the opening end of the focusing electrode layer protrudes into the opening, the potential of the focusing electrode layer is downward from the focusing electrode layer, that is, the gate electrode layer side. There is a concern that electron emission may occur toward. Therefore, it is preferable that the opening end of the sixth opening is retracted from the opening end of the fifth opening provided in the interlayer insulating layer.

The method of manufacturing the cold cathode field emission device according to the first aspect of the present invention (hereinafter referred to as the manufacturing method according to the first aspect) for achieving the first object is as described above. It is a method for manufacturing the cold cathode field emission device according to the first aspect, wherein (a) a step of forming an electron emission layer and an insulating layer on a support; and (b) a gate electrode on the insulating layer. Forming a layer; (c) forming, in the insulating layer, a second opening at least a lower end of which is recessed from an opening end of the first opening provided in the gate electrode; Forming a third opening in the electron emitting layer whose opening end is recessed from the opening end of the first opening by etching the electron emitting layer exposed at the bottom of the opening. And

Further, a method of manufacturing a cold cathode field emission device according to a second aspect of the present invention for achieving the second object (hereinafter, referred to as a manufacturing method according to the second aspect).
Is a method for manufacturing the cold cathode field emission device according to the second aspect described above, wherein (a) a step of forming an electron emission layer and an insulating layer on a support, and (b) an insulating layer A step of forming a gate electrode layer thereon; (c) a step of forming a second opening communicating with the first opening provided in the gate electrode layer in the insulating layer; and (d) a bottom of the second opening. The thickness of the opening end is reduced toward the front end by etching the electron emission layer exposed at the side, and the third opening in which the lower edge of the opening end is recessed from the upper edge is formed in the electron emitting layer. A step of forming the substrate.

In the manufacturing method according to the first embodiment and the second embodiment, the first opening is actually formed in the gate electrode layer before the second opening is formed in the insulating layer in the step (c). The second opening is formed in communication with the first opening. The first opening may be formed at the same time as forming the gate electrode layer in the step (b), or may be formed after the step (b) and before the step (c).

In the manufacturing method according to the first aspect, the second opening at the time when the step (c) is completed is formed in a state in which a so-called undercut has occurred below the gate electrode layer. It is preferable that the entire wall surface of the second opening is recessed from the opening end of the first opening already formed in the gate electrode layer. This allows the opening end of the third opening provided in the electron emission layer to protrude from the lower end of the second opening when the etching in the next step (d) is completed. In the manufacturing method according to the second aspect, since the positional relationship between the opening end of the first opening and the opening end of the third opening is not particularly defined, the second opening at the time when the step (c) is completed. The positional relationship between the wall surface and the opening end of the first opening is not particularly limited.

In the manufacturing method according to the first embodiment and the second embodiment, the etching of the electron-emitting layer in the step (d) is performed under conditions where ions are the main etching species, such as reactive ion etching (RIE). Can be done with
Usually, etching using ions as a main etching species is often performed for the purpose of forming a vertical wall at the end of the opening, but the mean free path of the ions is not sufficiently long, or the self-bias or application of the etching target is performed. Conditions such as bias not large enough, ion mass not large enough, and high frequency of high frequency to excite plasma, retention of etching species at corners of etched area, scattering, side Depending on phenomena such as direction migration, a forward tapered wall (that is, a wall inclined in a direction in which the area to be etched decreases as the etching proceeds deeper) may be formed at the opening end of the third opening,
Alternatively, a reverse tapered wall (that is, a wall inclined in a direction in which the area to be etched increases as the etching proceeds deeper) may be formed. In particular, in the manufacturing method according to the second aspect, one of the points in the process is to select the etching condition of the electron emission layer such that an inverted tapered wall is formed at the opening end of the third opening. Becomes

In the manufacturing method according to the first and second aspects, when the support is made of an insulating substrate, after the step (d), (e) the insulating substrate just below the third opening is formed. The method may further include a step of forming a concave portion in the portion.
Thereby, the deepest part of the opening can be extended to the lower side of the electron emitting layer, and a cold cathode field emission device that effectively exhibits the electric field convex lens effect near the edge of the electron emitting layer facing the opening is provided. Obtainable. Further, in the step (e) of the manufacturing method according to the first aspect, the upper end of the recess may be recessed from the opening end of the third opening by isotropically etching the insulating substrate. Thus, the opening end of the third opening provided in the electron emission layer can be projected from the side wall surface of the opening, and the electron emission efficiency can be increased. In the step (e) of the manufacturing method according to the second aspect, the insulating substrate is etched so that the upper end of the concave portion is aligned with the upper edge of the opening end of the third opening.
Alternatively, the upper end of the recess may be retracted from the upper edge of the opening end of the third opening. When aligning the upper end of the recess with the upper edge of the opening end of the third opening, anisotropic etching may be performed. On the other hand, when the upper end of the concave portion is retracted from the upper edge of the opening end of the third opening, isotropic etching is performed, or anisotropic etching and isotropic etching are performed. It may be performed in combination. In the case where the upper end of the recess is retracted from the upper edge of the opening end of the third opening, the upper end of the recess is located at a position intermediate between the upper edge and the lower edge of the opening end of the third opening. Examples include a case, a case in which the upper end of the recess is aligned with the lower edge of the opening end of the third opening, and a case in which the upper end of the recess is further retracted from the lower edge of the opening end of the third opening. Thereby, the edge of the electron emission layer can be made to protrude from the side wall surface of the concave portion, and the electron emission efficiency can be increased.

[0040] In the manufacturing method according to the first and second aspects, the support may include an insulating substrate, a second gate electrode layer formed on the insulating substrate, and an insulating substrate including on the second gate electrode layer. When it comprises the second insulating layer formed thereon,
After the step (d), (f) the second opening immediately below the third opening
A step of forming a fourth opening in the portion of the insulating layer and exposing the second gate electrode layer at the bottom of the fourth opening may be further included. The second gate electrode layer exposed at the bottom of the fourth opening can apply an electric field to the electron emission layer in cooperation with the gate electrode layer. Further, in the step (f) of the manufacturing method according to the first aspect, the upper end of the fourth opening is recessed from the opening end of the third opening by isotropically etching the second insulating layer. It is preferred that This allows
The tip (or edge) of the electron emission layer can be projected from the side wall surface of the opening, and the electron emission efficiency can be increased. In step (f) of the manufacturing method according to the second aspect, the second insulating layer is etched to
The upper end of the fourth opening may be aligned with the upper edge of the opening end of the third opening, or the upper end of the fourth opening may be retracted from the upper edge of the opening end of the third opening. Good. When aligning the upper end of the fourth opening with the upper edge of the opening end of the third opening, anisotropic etching may be performed. On the other hand, when the upper end of the fourth opening is retracted from the upper edge of the opening end of the third opening, isotropic etching is performed, or isotropic etching and isotropic etching are performed. It may be performed in combination with etching. In the case where the upper end of the fourth opening is retracted from the upper edge of the opening end of the third opening, the upper end of the fourth opening may be connected to the upper edge of the opening end of the third opening. A case in which the upper edge of the fourth opening is aligned with the lower edge of the opening end of the third opening, or a case where the upper end of the fourth opening is aligned with the lower edge of the opening end of the third opening. Includes the case of retracting further than the lower edge. Thus, the tip (or edge) of the electron emission layer can be projected from the side wall surface of the opening, and the electron emission efficiency can be increased.

In the manufacturing method according to the first embodiment and the second embodiment, when a focusing electrode layer is provided, an interlayer insulating layer is formed on the entire surface following the step (a). After the focusing electrode layer is formed on the interlayer insulating layer, the fifth
An opening can be formed. Actually, before the fifth opening is formed in the interlayer insulating layer, the sixth opening is formed in the focusing electrode layer, and the fifth opening is formed so as to communicate with the sixth opening. The sixth opening may be formed at the same time as forming the focusing electrode layer, or may be formed after forming the focusing electrode layer. After forming the fifth opening, in a step (c), a second opening communicating with the fifth opening is formed in the insulating layer. Before the formation of the second opening, the first opening is actually formed in the gate electrode layer as described above. That is, the formation of the sixth opening is not necessarily performed continuously with the formation of the fifth opening, and the formation of the first opening is not necessarily performed continuously with the formation of the second opening. I can't. Therefore, when providing an interlayer insulating layer and a focusing electrode layer,
The following four cases exist as the order of forming the openings. In addition, the first opening described in parentheses is
Indicates that they were formed at the same time when the gate electrode layer was formed,
The sixth opening in parentheses indicates that the opening was formed at the same time when the focusing electrode layer was formed. (1) 6th opening → 5th opening → 1st opening → 2nd opening (2) (1st opening) → 6th opening → 5th opening → 2nd
Opening (3) (Sixth opening) → Fifth opening → First opening → Second
Opening (4) (First opening) → (Sixth opening) → Fifth opening →
Second opening

In a display device of a so-called high voltage type in which the potential difference between the anode electrode and the electron-emitting layer is on the order of several kilovolts and the distance between the two electrodes is relatively long, the focusing electrode layer is formed from the electron-emitting layer. This member is provided to prevent the trajectory of emitted electrons from diverging. By increasing the convergence of the emission electron trajectory, optical crosstalk between pixels can be reduced, so that the pixels can be further miniaturized to achieve higher definition of the display screen. Note that the focusing electrode layer does not necessarily have to be provided separately for each cold cathode field emission device. It may be provided in a belt shape. When the focusing electrode layer is provided in a band shape, the plane shape of the sixth opening is a band shape, which is different from the plane shapes of the other first to fifth openings.

In the step (c) of the manufacturing method according to the first embodiment and the second embodiment, a typical method of forming the second opening in the insulating layer is a method of etching the insulating layer. it can. In particular, in the manufacturing method according to the first aspect, at least the lower end of the second opening needs to be recessed from the opening end of the first opening provided in the gate electrode layer. After forming the second opening by performing isotropic etching, or forming the second opening having vertical walls by performing anisotropic etching,
It is preferable to perform isotropic etching to retract the vertical wall. In the steps (e) and (f) of the manufacturing method according to the first aspect, it is preferable to perform isotropic etching. In the steps (e) and (f) of the manufacturing method according to the second aspect, when the upper end of the recess or the fourth opening is aligned with the upper edge of the opening end of the third opening, Etching may be performed. On the other hand, when the upper end of the recess or the fourth opening is retracted from the upper edge of the opening end of the third opening,
A recess or fourth opening is formed by performing isotropic etching from the beginning, or a recess or fourth opening having a vertical wall is formed by performing anisotropic etching, and then isotropic etching is performed. To retract the vertical wall. Note that isotropic etching can be typically performed under wet etching or dry etching conditions in which radicals are the main etching species. In the isotropic etching, since the removal of the etching target proceeds in both the depth direction and the in-plane direction, the wall surface of the formed second opening, concave portion or fourth opening recedes. The amount of retreat can be controlled by the length of the etching time.

A cold cathode field emission display according to a first embodiment of the present invention for achieving the first object is a device incorporating the cold cathode field emission device according to the first embodiment. , Each pixel is composed of a plurality of cold cathode field emission devices, and an anode electrode layer and a phosphor layer provided on a substrate facing the plurality of cold cathode field emission devices. , Each cold cathode field emission device
A cold-cathode field emission display device in which an electron emission layer, an insulating layer, and a gate electrode layer are laminated on a support in this order, wherein an opening reaching the surface of the support from the gate electrode layer is provided. The opening includes a first opening provided in the gate electrode layer, a second opening provided in the insulating layer, and a third opening provided in the electron emitting layer. And the second opening and the third opening communicate with each other, and the opening end of the third opening from which electrons are emitted is recessed from the opening end of the first opening. I do.

Further, a cold cathode field emission display according to a second aspect of the present invention for achieving the above-mentioned second object is a device incorporating the cold cathode field emission element according to the second aspect. And is composed of a plurality of pixels, and each pixel is
The cold cathode field emission device includes a plurality of cold cathode field emission devices, and an anode electrode layer and a phosphor layer provided on a substrate facing the plurality of cold cathode field emission devices. A cold cathode field emission display device in which a layer, an insulating layer, and a gate electrode layer are stacked on a support in this order, provided with an opening reaching the surface of the support from the gate electrode layer, An opening, a first opening provided in the gate electrode layer, a second opening provided in the insulating layer,
A third opening provided in the electron emission layer, the first opening, the second opening, and the third opening communicating with each other, and an opening end of the third opening from which electrons are emitted. The thickness decreases toward the front end, and the lower edge of the open end of the third opening is recessed from the upper edge.

The cold-cathode field emission display according to the first and second embodiments is characterized in that the cold-cathode field-emission device according to the first and second embodiments has the concave portion and the second
Both the gate electrode and the focusing electrode may be provided.
All the provisions described in relation to the cold cathode field emission device according to the aspect and the second aspect apply.

In the cold cathode field emission display according to the first and second embodiments, the support or the substrate is
A glass substrate, a glass substrate having an insulating film formed on its surface, a quartz substrate, a quartz substrate having an insulating film formed on its surface, and an insulating film formed on its surface are sufficient as long as at least the surface is made of an insulating material. Semiconductor substrate.

In the cold cathode field emission device according to all aspects of the present invention, the method of manufacturing the same, and the cold cathode field emission display, the gate electrode layer or the second gate electrode layer may be made of tungsten (W), niobium ( Nb), tantalum (Ta), titanium (Ti), molybdenum (M
o), chromium (Cr), aluminum (Al), copper (C
u), a metal layer such as silver (Au), or an alloy layer containing these metal elements, or a compound containing these metal elements (for example, nitride such as TiN, WSi ₂ , MoSi ₂ , TiSi
₂ , a silicide such as TaSi ₂ ), carbon, a transparent conductive material such as ITO (indium tin oxide), or a semiconductor such as silicon or diamond containing impurities. As a method for forming the gate electrode layer or the second gate electrode layer, a printing method can be used in addition to a normal thin film manufacturing process such as an evaporation method, a sputtering method, a CVD method, and an ion plating method. The material forming the gate electrode layer and the material forming the second gate electrode layer may be the same or different.

In the cold cathode field emission device according to all aspects of the present invention, the manufacturing method thereof, and the cold cathode field emission display device, the electron emission layer is typically made of tungsten (W) or tantalum (Ta). ) Or a semiconductor material such as diamond. When the first opening is formed by etching the gate electrode layer, the etching rate of the electron emitting layer when forming the third opening in the electron emitting layer is higher than the etching rate of the gate electrode layer. It is preferable to select a combination of a material forming the electron emission layer and a material forming the gate electrode layer. For example, tantalum (Ta) is used as a material forming the electron emission layer, and tungsten (W) is used as a material forming the gate electrode layer. Alternatively, for example, tungsten (W) can be exemplified as a material constituting the electron emission layer, and tantalum (Ta) can be exemplified as a material constituting the gate electrode layer. The thickness is approximately 0.05 to 0.5 μm, preferably 0.1 to 0.3 μm
Is desirable, but it is not limited to such a range.

In the cold cathode field emission device according to all aspects of the present invention, the method of manufacturing the same, and the cold cathode field emission display device, the constituent material of the insulating layer, the second insulating layer or the interlayer insulating layer is SiO. ₂ , SiN, Si
ON or a glass paste cured product can be used alone or in an appropriate combination. Known methods such as a CVD method, a coating method, a sputtering method, and a printing method can be used for forming the insulating layer, the second insulating layer, or the interlayer insulating layer.

[0051]

FIG. 1 shows the most basic structure of a cold cathode field emission device (hereinafter, referred to as a field emission device) according to a first embodiment of the present invention. In this field emission device, an electron emission layer 1 is provided on a support 10 made of an insulating substrate.
3, an opening 16 is provided in a laminated body in which the insulating layer 14, the gate electrode layer 15 are laminated in this order. This opening 16 has three similar openings communicating with each other, namely,
It comprises a first opening 15A provided in the gate electrode layer 15, a second opening 14A provided in the insulating layer 14, and a third opening 13A provided in the electron emission layer 13. The support 10 is exposed at the bottom of the opening 16.
Further, the wall surface of the second opening is recessed from the opening end of the first opening 15A, and the opening end of the third opening (that is, the edge of the electron emission layer 13 facing the opening 16) extends from this wall surface. Part) is protruding. In addition, one pixel is configured by a plurality of such openings 16 being assembled.

FIG. 1A shows a configuration in which the opening end of the third opening 13 A provided in the electron emitting layer 13 has a vertical wall perpendicular to the support 10. In this case, the third
The vertical wall of the opening 13A becomes the tip of the opening end. On the other hand, FIG. 1B shows a configuration in which the opening end of the third opening 13 </ b> A provided in the electron emission layer 13 has an inclined wall inclined with respect to the support 10. In this case, the portion of the inclined wall that protrudes most toward the center of the opening 16 is the tip of the opening end. Although FIG. 1B shows a configuration in which the inclined wall is a forward tapered wall, it may be an inverted tapered wall. The opening end of the third opening 13A is a vertical wall,
Regardless of which of the inclined walls is provided, the field emission device according to the first aspect has an opening end of the third opening 13A from which electrons are emitted as shown in FIG. Part 15A
It has a feature in that it is receded from the end of the opening. In other words, the projected image of the first opening 15A on the support 10 is
The projection image of the third opening 13A onto the support 10 is included in the projection image. Although FIG. 1C illustrates a case where the planar shape of the first opening 15A and the third opening 13A is rectangular,
Other arbitrary planar shapes are possible.

The field emission device according to the first embodiment can have a configuration as shown in FIG. 2 as long as the above-mentioned geometric conditions are satisfied between the first opening 15A and the third opening 13A. is there. FIG. 2A is the same as the configuration shown in FIG. FIG. 2B shows a configuration in which the concave portion 24 is provided in a portion of the insulating substrate immediately below the third opening 13A when the support 10 is formed of an insulating substrate. The upper end of the recess 24 is recessed from the opening end of the third opening 13A. FIG. 2C shows a structure in which an interlayer insulating layer 25 and a focusing electrode layer 26 are provided in the structure of FIG. In the interlayer insulating layer 25 formed on the insulating layer 14 including the gate electrode layer 15, a fifth opening 25A is provided so as to communicate with the first opening 15A. In the focusing electrode layer 26 formed on the interlayer insulating layer 25, a sixth opening 26A is provided so as to communicate with the fifth opening 25A. FIG.
(D) shows a configuration in which a concave portion 24 is added to the configuration shown in (C) of FIG. FIG. 2 (E) shows that the support 10 has an insulating substrate 100 and a second substrate formed on the insulating substrate 100.
A gate electrode layer 11 and a second insulating layer 12 formed on an insulating substrate 100 including a portion above the second gate electrode layer 11, and an opening 16 is further formed in a fourth opening 12 </ b> A provided in the second insulating layer 12. The configuration including the following is shown. The upper end of the fourth opening 12A is recessed from the opening end of the third opening 13A.
FIG. 2F shows a structure in which an interlayer insulating layer 25 and a focusing electrode layer 26 are added to the structure shown in FIG.

FIGS. 3 and 4 show the most basic configuration of the field emission device according to the second embodiment. FIG. 3A is a schematic end view of the field emission device, and FIG. 3B is a top view. 3 and 4 are the same as those in FIG. 1, and detailed description of each unit will be omitted. The thickness of the opening end of the third opening 13A from which electrons are emitted decreases toward the tip, and the lower edge of the opening end of the third opening 13A is recessed from the upper edge. . That is, the third opening 13A
Has an inverted tapered wall. One pixel of the display device is configured by assembling a plurality of such openings 16. Third opening 13 of the field emission device shown in FIG.
The upper edge of the opening end of A is aligned with the opening end of the first opening 15A. Therefore, the first opening 15A and the third opening 13A in FIG. 3B overlap.

FIG. 4A shows a field emission device in which the upper edge of the opening end of the third opening 13A is recessed from the opening end of the first opening 15A, and FIG. Shows a field emission device in which the upper edge of the opening end of the third opening 13A protrudes from the opening end of the first opening 15A. (B) of FIG.
It is a top view which shows these field emission elements collectively.
The planar shape of the first opening 15A and the third opening 13A shown in FIGS. 3 and 4 is not limited to a rectangle, but may be any other planar shape.

In the field emission device according to the second aspect, the thickness of the opening end of the third opening 13A from which electrons are emitted decreases toward the front end, and the lower edge of the opening end is the upper edge. The configuration shown in FIG. 5 is also possible as long as it is further retracted. FIG. 5A is the same as the configuration shown in FIG. FIG. 5B shows a configuration in which the concave portion 24 is provided in a portion of the insulating substrate immediately below the third opening 13A when the support 10 is formed of an insulating substrate. A solid line indicates that the upper end of the recess 24 is located between the upper edge and the lower edge of the opening end of the third opening 13A, and a broken line indicates that the recess 24 is further retracted from the lower edge. FIG. 5C shows a structure in which an interlayer insulating layer 25 and a focusing electrode layer 26 are provided in the structure of FIG. In the interlayer insulating layer 25 formed on the insulating layer 14 including the gate electrode layer 15, a fifth opening 25A is provided so as to communicate with the first opening 15A. The focusing electrode layer 26 formed on the interlayer insulating layer 25 has the sixth opening 26 so as to communicate with the fifth opening 25A.
A is provided. FIG. 5 (D) shows FIG. 5 (C).
A configuration in which a concave portion 24 is added to the configuration shown in FIG. The expression by the solid line and the broken line is the same as that in FIG. In FIG. 5E, the support 10 is formed on the insulating substrate 100, the second gate electrode layer 11 formed on the insulating substrate 100, and the insulating substrate 100 including the second gate electrode layer 11. The opening 16 is further formed of the second insulating layer 12.
2 shows a configuration including a fourth opening 12 </ b> A provided in FIG. The case where the upper end of the fourth opening 12A is located at an intermediate position between the upper edge and the lower edge of the opening end of the third opening 13A is indicated by a solid line, and the case where it is further retracted from the lower edge is indicated by a broken line. . FIG. 5F shows an interlayer insulating layer 2 in the configuration shown in FIG.
5 and a configuration in which a focusing electrode layer 26 is added. The expression by the solid line and the broken line is the same as that in FIG.

(Embodiment 1) In Embodiment 1, FIG. 2E shows a typical example of the field emission device according to the first embodiment.
, A manufacturing method according to a first embodiment for manufacturing the field emission device, and a cold cathode field emission display according to a first embodiment incorporating the field emission device. The present invention relates to a device (hereinafter referred to as a display device). FIG. 6 shows only a part of the vicinity of the opening 16 of the field emission device in a partially cutaway manner. FIG. 7 shows a cross section taken along line AA of FIG. 6 including the periphery of the opening. The insulating layer 14 has a second
In a region adjacent to the region where the opening 14A is formed, a first hole 17 serving as an electrical connection for supplying a predetermined voltage to the electron emission layer 13 is formed. The second insulating layer 12 has a second hole 18 serving as an electrical connection for supplying a predetermined voltage to the second gate electrode layer 11 in a region adjacent to the region where the fourth opening 12A is formed. Is formed.

Hereinafter, a method of manufacturing the field emission device according to the first embodiment will be described with reference to FIGS. In the following description, the insulating substrate and any structures formed thereon at the stage when an arbitrary process is completed may be collectively referred to as a “base”.

[Step-100] First, a tungsten film having a thickness of about 0.2 μm is formed on an insulating substrate 100 made of, for example, a glass substrate by sputtering, and the tungsten film is formed by photolithography and dry etching according to a normal procedure. The second gate electrode layer 11 is formed by patterning the tungsten film. Next, the second insulating layer 1 is formed on the entire surface.
Form 2 Here, as an example, SiO ₂ is added to about 0.
It is formed to a thickness of 3 μm. Further, after a conductive film made of tantalum is formed on the second insulating layer 12 to a thickness of 0.2 μm, the conductive film is patterned into a predetermined shape.
To form Next, an insulating layer 14 made of, for example, SiO ₂ is formed on the entire surface to a thickness of, for example, about 0.7 μm. Furthermore,
By forming a tungsten film having a thickness of about 0.2 μm on the insulating layer 14 and performing predetermined patterning,
The gate electrode layer 15 can be obtained. Gate electrode layer 1
5 for the second gate electrode layer 11
And may be the same or different. FIG. 8A shows a state in which the processes up to this point have been completed.

[Step-110] Next, as shown in FIG. 8B, the insulating layer 14 and the second insulating layer 12 are patterned, and an electric power for supplying a predetermined voltage to the electron emitting layer 13 is obtained. A first hole 17 serving as an electrical connection and a second hole 18 serving as an electrical connection for supplying a predetermined voltage to the second gate electrode layer 11 are formed.

[Step-120] Next, a resist layer 19 is formed on the entire surface of the substrate, and a resist opening 19A is formed in the resist layer 19 so as to partially expose the surface of the gate electrode layer 15. This resist opening 19A is
It can be formed through ordinary photolithography and development processing, and does not require any special method or delicate control such as defocus exposure or formation of a hardly soluble layer in a chemically amplified resist material. The planar shape of the resist opening 19A is rectangular, and FIG. 9A shows a cross section in the short side direction. The long side of the rectangle is approximately 100 μm, and the short side is several μm to 10 μm. Subsequently, the gate electrode layer 15 exposed at the bottom of the resist opening 19A is, for example,
The first opening 15A is formed by anisotropically etching by an E (reactive ion etching) method. Here, since the gate electrode layer 15 is configured using tungsten,
The first opening 15A having a vertical wall at the opening end can be formed by etching using SF ₆ gas (see FIG. 9A).

[Step-130] Next, as shown in FIG. 9B, the insulating layer 1 exposed at the bottom of the first opening 15A is formed.
4 is isotropically etched to form a second opening 14A. Here, since the insulating layer 14 is formed using SiO ₂ , wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the second opening 14A is the first opening 1
Although it is retracted from the opening end of 5A, the amount of retreat at this time can be controlled by the length of the etching time. Here, the lower end of the second opening 14A is connected to the first opening 15A.
Wet etching is performed until the hole is retracted from the opening end of the hole. Note that the etching of the insulating layer 14 may be performed by a combination of dry etching and wet etching.
For example, after the second opening 14A having a vertical wall is formed by anisotropic dry etching, the vertical wall may be receded by isotropic wet etching. The combination of the two types of etching can be similarly applied to the etching of the second insulating layer 12 described later.

[Step-140] Next, as shown in FIG. 10A, the electron emission layer 13 exposed at the bottom of the second opening 14A is dry-etched under the condition of using ions as main etching species. The third opening 13A is formed. Thus, a vertical wall is formed at the opening end of the third opening 13A at a position substantially aligned with the lower end of the second opening 14A. SF ₆ can be used as an etching gas. However, an incident component having an angle other than perpendicular is also present in the main etching species in the plasma, or
When an oblique incidence component is generated by scattering at the opening end of the first opening, the edge of the electron emission layer 13
The main etching species is incident on the region shielded by the vertical projection image of the first opening 15A with a certain probability. In such a case, a forward tapered wall as shown in FIG. 1B is formed at the opening end of the third opening 13A. That is,
The thickness of the edge of the electron emission layer 13 facing the opening 16 becomes thinner toward the tip in the protruding direction, and the tip is sharpened.

[Step-150] Next, as shown in FIG. 10B, the second insulating layer 12 exposed at the bottom of the third opening 13A is isotropically etched to form the fourth opening 12A. Is formed to complete the opening 16. Here, similarly to the case of the above-described second insulating layer 14, wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the fourth opening 12A retreats from the opening end of the third opening 13A. Although the amount of retreat at this time can be controlled by the length of the etching time, it is necessary to make the upper end of the fourth opening 12A recede from the opening end of the third opening 13A provided in the electron emission layer 13. . At this time, the previously formed second opening 1
The wall surface of 4A retreats further. When the resist layer 19 is removed after the opening 16 is completed, the configuration shown in FIG. 7 can be obtained.

The field emission devices manufactured as described above are actually assembled in large numbers to form a cathode panel.
When this cathode panel is combined with the anode panel 23 as shown in FIG. 11 and connected to an external power supply circuit, the display device 30 according to the first embodiment is completed. The space between the cathode panel and the anode panel 23 is set to a high vacuum. In the actual configuration of the display device, the periphery of the anode panel and the periphery of the cathode panel are joined via a spacer and / or a frame, and the space between these panels is exhausted. Although not shown, the anode panel 23 is provided with a phosphor layer and an anode electrode layer formed in a predetermined pattern. The external power supply circuit includes a power supply 20 for the first gate electrode, a power supply 21 for the second gate electrode, and a power supply 22 for the anode. -100 volts), and a higher positive voltage is applied to the anode electrode layer (not shown) of the anode panel 23. Note that, for example, a pulsed positive voltage may be applied to the second gate electrode layer 11 and a constant positive voltage may be applied to the gate electrode layer 15. Further, a negative voltage is applied to the electron emission layer 13 or grounded.

When the display panel is manufactured by bonding the anode panel 23 and the cathode panel at the peripheral portion, the peripheral portion may be bonded only with frit glass or a low melting point metal material, or may be bonded via a frame. It may be adhered. Frame and anode panel 2 when using a frame
3 and the bonding between the frame and the cathode panel can also be performed using frit glass or a low melting point metal material. Here, the “low melting point” of the low melting point metal material is
It generally indicates a temperature range of 400 ° C., and the material can be appropriately selected from indium, indium-based alloy, tin-based solder, lead-based solder, and zinc-based solder. Such a low-melting-point metal material is less likely to cause outgassing than frit glass, and thus is suitable for maintaining a vacuum degree in the internal space of the display device for a long period of time, thereby extending the life of the display device. is there. In manufacturing the display device, for example, a frame (not shown) having a height of about 1 mm made of ceramics or glass is prepared, and the frame, the anode panel 23 and the cathode panel are temporarily bonded using frit glass. After about 45
What is necessary is just to bake at 0 degreeC for 10 to 30 minutes. Thereafter, the internal space of the display device is evacuated until the degree of vacuum is reduced to about 10 ⁻⁴ Pa, and sealed by an appropriate method. Alternatively, the frame, the anode panel 23, and the cathode panel may be bonded to each other using a frit glass or a low-melting metal material or a frame in a vacuum chamber. Becomes high vacuum, so that exhaust in a post-process becomes unnecessary.

In the structure of the display device 30, the gate electrode layer 1 is formed on the edge of the electron emission layer 13 facing the opening 16.
An electric field is applied from the fifth and second gate electrode layers 11, and electrons are emitted from the edge of the electron emission layer 13 by the quantum tunnel effect. A part (e ₁ ) of the emitted electrons directly goes from the opening 16 to the phosphor layer (not shown), and another part is a recoil electron (e _{2) that is} recoiled on the surface of the second gate electrode layer 11. ) To the phosphor layer. Secondary electrons may be emitted from the surface of the second gate electrode layer 11 due to collision of electrons emitted from the electron emission layer 13, and such secondary electrons (e ₃ ) also travel toward the phosphor layer. These electrons e ₁ , e
Both ₂ and e ₃ ultimately contribute to exciting the phosphor layer and causing it to emit light. The field emission device according to the first aspect includes a first opening 1 provided in the gate electrode layer 15.
Since the portion corresponding to the exit of the electrons in the opening 16 is narrowed by 5A, the electric field is effectively confined inside the opening 16. If this state is expressed using equipotential lines, the intervals between the equipotential lines are dense near the edge of the electron emission layer 13, and a strong electric field is efficiently applied to the edge of the electron emission layer 13. Means that. Therefore, according to the field emission device of the first aspect, the gate electrode layer 15 and the second
Even if the voltage applied to the gate electrode layer 11 is relatively low, a sufficient emission electron current can be obtained. That is, a field emission device with low power consumption and high electron emission efficiency is realized,
The brightness and image quality of a display device incorporating such a field emission device are improved.

(Embodiment 2) Embodiment 2 is a typical example of the field emission device according to the second embodiment, which is shown in FIG.
And a manufacturing method according to a second embodiment for manufacturing the field emission device, and a display device according to a second embodiment incorporating the field emission device. FIG. 12 shows an opening 1 of the field emission device.
13 is partially cut away, and FIG. 13 shows a cross section taken along line AA of FIG. 12 including the periphery of the opening. The reference numerals in these drawings are common to those in FIGS. The second embodiment is different from the first embodiment in that an inverted tapered wall is formed at the opening end of the third opening 13A provided in the electron emitting layer 13.

Hereinafter, a method for manufacturing the field emission device according to the second embodiment will be described with reference to FIG.

[Step-200] First, [Step-100]
Steps to [Step-130] are performed in the same manner as in the first embodiment. Next, the electron emission layer 13 made of tantalum exposed at the bottom of the second opening 14A is dry-etched according to the conditions shown in Table 1 below as an example, and the third opening 13A is formed.
To form Under these etching conditions, as shown in FIG. 14A, the third opening 13 from which electrons are emitted is formed.
The thickness of the opening end of A decreases toward the tip, and the lower edge of the opening end of the third opening 13A recedes from the upper edge (ie, the edge of the electron emission layer 13). A reverse tapered wall is formed). In the illustrated example, the first opening 15A
Although the opening end of the third opening 13A and the opening end of the third opening 13A are aligned, they do not have to be aligned.

[Table 1] Etching apparatus: Parallel plate type RIE (reactive ion etching) apparatus SF ₆ Flow rate: 100 SCCM Pressure: 10 Pa RF power: 200 W (13.56 MHz)

[Step-210] Next, as shown in FIG. 14B, the second insulating layer 12 exposed at the bottom of the third opening 13A is isotropically etched to form the fourth opening 12A. Is formed to complete the opening 16. Here, as in the case of the insulating layer 14 described above, wet etching using a buffered hydrofluoric acid aqueous solution is performed. The fourth opening 12 at this time
The amount of retreat of the wall surface of A can be controlled by the length of the etching time. It is retracted from the edge and even the lower edge. At this time, the wall surface of the previously formed second opening 14A further retreats.
When the resist layer 19 is removed after the completion of the opening 16, the configuration shown in FIG. 13 can be obtained.

A large number of the field emission devices manufactured as described above constitute a cathode panel.
When this cathode panel is combined with the anode panel 23 as shown in FIG. 15 and connected to an external power supply circuit, the display device 31 according to the second embodiment is completed. Since the reference numerals in FIG. 15 are the same as those in FIG. 11, detailed description of each unit will be omitted. The method of manufacturing the display device 31 is as described above with reference to the display device 30.

In the configuration of the display device 31, the gate electrode layer 1 is formed on the edge of the electron emission layer 13 facing the opening 16.
An electric field is applied from the fifth gate electrode layer 11 and the second gate electrode layer 11, and electrons are emitted from the opening end (more specifically, the upper edge) of the third opening 13A by the quantum tunnel effect. The thickness of the opening end of the third opening from which electrons are emitted decreases toward the tip end, and the third opening is formed with an inverted tapered wall, so that the electron is emitted from the opening end. Most of the electrons (e ₁ ) are drawn out of the opening 16 as they are, and go directly to a phosphor layer (not shown). As described above, since the energy distribution width of the electron (e ₁ ) directly traveling to the phosphor layer is narrow, it is relatively easy to control the orbit so that it collides with a predetermined phosphor layer. On the other hand, recoiled electrons (e ₂ ) that are directed toward the phosphor layer after being recoiled on the surface of the second gate electrode layer 11 and electrons emitted from the electron emission layer 13 collide with the surface of the second gate electrode layer 11. There are some secondary electrons (e ₃ ) that have been knocked out of the substrate. However, in the display device according to the second embodiment, the proportion of such recoil electrons (e ₂ ) and secondary electrons (e ₃ ) is extremely smaller than that of the electrons (e ₁ ) directly going to the phosphor layer. There is almost no possibility that the convergence of the emitted electron orbit will be adversely affected.

The magnitude relationship between the voltages applied to the gate electrode layer 15 and the second gate electrode layer 11 can be selected according to the thickness of the insulating layer 14 and the second insulating layer 12. For example, the thickness of the insulating layer 14 is t ₁ , the thickness of the second insulating layer 12 is t ₂ , the applied voltage to the gate electrode layer 15 is V ₁ , and the applied voltage to the second gate electrode layer 11 is V ₂ . Then, it is preferable that t ₁ <t ₂ when V ₁ and V ₂ are set to be substantially equal, and V ₁ > V ₂ when t ₁ and t ₂ are set substantially equal. Is preferred.

The present invention has been described based on the embodiments of the present invention, but the present invention is not limited to these embodiments. The details of the structure of the field emission device, the details of the structure of the display device to which the field emission device is applied are examples,
Changes, selections, and combinations can be made as appropriate. For example, any of the field emission devices according to the first embodiment shown in FIG. 2 can be applied as components of the display device according to the first embodiment, and the field emission device according to the second embodiment shown in FIG. Any of the field emission devices can be applied as a component of the display device according to the second embodiment. In addition, details, such as details of the structure of the field emission device, processing conditions in the manufacturing method, and materials used, can be appropriately changed, selected, and combined.

For example, with respect to the field emission device according to the first embodiment, field emission devices other than those shown in FIG. 2E can be manufactured by basically the same process. For example, to manufacture the field emission device shown in FIG. 2B, first, as shown in FIG. 16A, an electron emission layer 13, an insulating layer 14, and a gate electrode layer are formed on a support 10. 15 are formed in this order. In this case, the support 10 is made of an insulating substrate. Next, the opening 16 is formed by sequentially etching the gate electrode layer 15, the insulating layer 14, and the electron emission layer 13 in accordance with the above-described process (see FIG. 16B). Next, a recess 24 is formed in the portion of the insulating substrate immediately below the third opening 13A (see FIG. 16C). When the upper end is aligned with the opening end of the third opening 13A, the recess 24 can be formed by anisotropic dry etching, but the upper end is recessed from the lower edge of the third opening 13A. In this case, it can be formed by isotropic etching or a combination of anisotropic etching and isotropic etching.

In order to manufacture the field emission device according to the first embodiment shown in FIG. 2F, first, as shown in FIG. Electrode layer 11, second insulating layer 12, electron emitting layer 13, insulating layer 1
4. The gate electrode layer 15, the interlayer insulating layer 25, and the focusing electrode layer 26 are formed in this order. Here, the insulating substrate 10
0, the second gate electrode layer 11, and the stacked body of the second insulating layer 12 correspond to the support 10. Next, FIG.
As shown in FIG. 7, the focusing electrode layer 26 is etched to form the sixth opening 26A, and the interlayer insulating layer 25 is further etched to form the fifth opening 25A. In FIG. 17B, the fifth opening 25A provided in the interlayer insulating layer 25 is smaller than the sixth opening 26A provided in the focusing electrode layer 26. This is a device for preventing electron emission from the converging electrode layer 26 to which a voltage substantially the same as that of the electrode 13 is applied. Further, by opening the focusing electrode layer 26 widely, there is also an effect that the focal length of the electric field convex lens near the final opening 16 is lengthened. In order to achieve such a configuration, for example, an etching mask and a fifth
An etching mask for forming the opening 25A may be manufactured in another step. Subsequent processes are performed as described above. Thus, the field emission device shown in FIG. 18 can be obtained.

In the method of manufacturing the field emission device according to the first embodiment, when the electron emission layer 13 is formed in [Step-100], the third shape may be used depending on the shape of the edge of the electron emission layer 13.
The opening 13A can be formed at the same time. This formation can be performed by a printing method other than the combination of the above-described tungsten film formation and patterning.
When the third opening 13A is formed in [Step-100], [Step-140] may be omitted and [Step-150] may be executed following [Step-130]. Similarly, the gate electrode layer 15 and the first opening 15A can be formed simultaneously by, for example, a printing method, and the focusing electrode layer 26 and the sixth opening 26A can be formed simultaneously.

Regarding the field emission device according to the second embodiment, field emission devices other than those shown in FIG. 5E can be manufactured by basically the same process. For example, to manufacture the field emission device shown in FIG. 5B, first, as shown in FIG.
The electron emission layer 13, the insulating layer 14, and the gate electrode layer 15 are formed in this order on 0. In this case, the support 10 is made of an insulating substrate. Next, the gate electrode layer 15, the insulating layer 14, and the electron emission layer 13 are sequentially etched according to the above-described process to form an opening 16 (FIG. 19B).
reference). Next, a concave portion 24 is formed in a portion of the insulating substrate immediately below the third opening 13A (see FIG. 19C). The concave portion 24 can be formed by anisotropic dry etching when the upper end is aligned with the upper edge of the opening end of the third opening 13A, but the upper end is formed by the opening end of the third opening 13A. Can be formed by isotropic etching. According to the configuration shown in FIG. 5B, the electron emission layer 13 is formed again after the recess 24 is formed.
By performing this etching, the taper angle θ at the opening end of the third opening 13A can be further reduced. This is because a space is also formed below the electron emission layer 13 so that the etching species can reach the back side of the electron emission layer 13.

Further, in order to manufacture the field emission device according to the second embodiment shown in FIG. 5F, after obtaining the state shown in FIG. As shown in FIG. 20, a first opening 15A, a second opening 14A, a third opening 13A, and a fourth opening 12A may be sequentially formed. still,
In the method for manufacturing a field emission device according to the second aspect,
For example, by a printing method, the focusing electrode layer 26 and the sixth opening 26 are formed.
A can be simultaneously formed, or the gate electrode layer 15 and the first opening 15A can be simultaneously formed.

In the manufacturing method according to the first embodiment and the second embodiment, a plurality of grooves are formed in the electron emitting layer 13 at the stage shown in FIG. 1
When the third opening 13A is formed by the etching of No. 3, it is also possible to form unevenness at the opening end. At the opening end, a plurality of sharply pointed portions are formed in accordance with the number of grooves, and electrons are emitted from each of these pointed portions, so that the emitted electron current increases, and thus It is possible to improve the brightness of the display device incorporating the field emission element.

[0083]

As described above, the field emission device according to the first aspect of the present invention is a so-called edge type device in which a gate electrode layer is formed on an electron emission layer with an insulating layer interposed therebetween. The edge of the electron emission layer facing the opening is recessed from the edge of the gate electrode layer. Therefore, the electric field can be efficiently concentrated in the opening, and a high emission electron current can be obtained at a low gate voltage. The field emission device according to the second aspect of the present invention is also an edge type device, in which an inverted tapered wall is formed at the edge of the electron emission layer facing the opening. Therefore, most of the electrons emitted from the edge of the electron emission layer can be directed directly to the outside of the opening.

In the display device according to the first embodiment incorporating the field emission device according to the first embodiment and the display device according to the second embodiment incorporating the field emission device according to the second embodiment, Despite the power consumption, high luminance and high image quality can be achieved. According to the method of manufacturing the field emission device according to the first and second aspects of the present invention, the cross-sectional shape of the opening and the shape of the edge of the electron emission layer facing the opening are self-aligned. Thus, a highly reliable process that is extremely advantageous from the viewpoint of reproducibility and throughput and that can cope with an increase in the area of a display screen is realized.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram showing a basic configuration of a field emission device according to a first embodiment.

FIG. 2 is a conceptual diagram showing another configuration of the field emission device according to the first embodiment in which a concave portion of a support and / or a focusing electrode layer are added to the basic configuration of FIG.

FIG. 3 is a conceptual diagram showing a basic configuration of a field emission device according to a second embodiment.

FIG. 4 is a conceptual diagram showing another basic configuration of the field emission device according to the second embodiment.

5 is a conceptual diagram showing another configuration of the field emission device according to the second embodiment in which a concave portion of a support and / or a focusing electrode layer are added to the basic configuration of FIG.

FIG. 6 is a partially cutaway perspective view showing an opening of the field emission device having the configuration shown in FIG.

FIG. 7 is a schematic end view showing a cross section taken along line AA of FIG. 6 together with a structure around an opening.

FIGS. 8A and 8B are schematic end views showing steps common to the manufacturing method according to the first embodiment and the second embodiment, wherein FIG. The state which formed the 1st hole part and the 2nd hole part used for connection is shown.

FIG. 9 is a schematic end view showing steps common to the manufacturing method according to the first embodiment and the second embodiment, following FIG. 8;
(A) shows a state in which a first opening is formed, and (B) shows a state in which a second opening is formed.

FIGS. 10A and 10B are schematic end views showing the steps included in the manufacturing method according to the first embodiment, following FIG. 9, in which FIG. 7 shows a state in which a portion is formed.

FIG. 11 is a conceptual diagram illustrating a configuration example of a display device according to a first embodiment.

FIG. 12 is a perspective view of the field emission device having the configuration shown in FIG.

FIG. 13 is a schematic end view showing a cross section taken along line AA of FIG. 12 together with a structure around an opening.

FIG. 14 is a schematic end view showing a step included in the manufacturing method according to the second embodiment, following FIG. 9, (A) showing a state where a third opening is formed, and (B) showing a fourth opening. 7 shows a state in which a portion is formed.

FIG. 15 is a conceptual diagram illustrating a configuration example of a display device according to a second embodiment.

FIG. 16 is a schematic end view showing a manufacturing step of the field emission device having the configuration of FIG. 2B.

FIG. 17 is a schematic end view showing the manufacturing process of the field emission device having the configuration of FIG. 2 (F).

FIG. 18 is a schematic end view showing the manufacturing process of the field emission device having the configuration of FIG. 2F, following FIG. 17;

FIG. 19 is a schematic end view showing the manufacturing process of the field emission device having the configuration of FIG. 5B.

FIG. 20 is a schematic end view showing the manufacturing process of the field emission device having the configuration of FIG. 5F, following FIG. 17;

FIG. 21 is a schematic end view showing a general configuration example of a display device incorporating a Spindt-type element.

FIGS. 22A and 22B are schematic end views illustrating an example of a conventional method for manufacturing a Spindt-type element. FIG. 22A is a state in which an opening is formed, and FIG. Respectively.

FIG. 23 is a schematic end view for explaining an example of a conventional method for manufacturing a Spindt-type element following FIG. 22;
(A) shows a state in which a conical electron-emitting electrode is formed as the metal layer grows, and (B) shows a state in which an unnecessary metal layer is removed together with a release layer.

FIG. 24 is a schematic end view showing a configuration example of a conventional edge-type element.

[Explanation of symbols]

10 support, 11 second gate electrode layer, 12
... 2nd insulating layer, 12A ... 4th opening, 13 ...
An electron-emitting layer, 13A ... third opening, 14 ... insulating layer, 14A ... second opening, 15 ... gate electrode layer, 15A ... first opening, 16 ... .Opening, 17
... 1st hole, 18 ... 2nd hole, 20 ... 1st
Power supply for gate electrode, 21... Power supply for second gate electrode,
Reference numeral 22: power supply for anode, 23: anode panel, 25: interlayer insulating layer, 25A: fifth opening,
26: focusing electrode layer, 26A: sixth opening, 3
0, 31: display device, 100: insulating substrate

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Masami Okita 6-35, Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F-term (reference) 5C036 EE01 EE14 EF01 EF06 EF09 EG12 EH06 EH08

Claims (31)

[Claims] An electron emission layer, an insulating layer, and a gate electrode layer are laminated on a support in this order, and an opening is provided from the gate electrode layer to a surface of the support, and the opening is a gate. It comprises a first opening provided in the electrode layer, a second opening provided in the insulating layer, and a third opening provided in the electron emitting layer, wherein the first opening, the second opening and the third opening are provided. The cold cathode field emission device according to claim 3, wherein the third opening is in communication with the third opening, and the opening end of the third opening from which electrons are emitted is recessed from the opening end of the first opening. . 2. The cold cathode field emission device according to claim 1, wherein an opening end of the third opening protrudes from a lower end of the second opening. 3. The cold cathode field emission device according to claim 2, wherein the thickness of the opening end of the third opening decreases toward the tip. 4. The cold cathode field emission device according to claim 1, wherein the support comprises an insulating substrate. 5. The cold cathode field emission device according to claim 4, wherein a concave portion is provided in a portion of the insulating substrate immediately below the third opening. 6. The cold cathode field emission device according to claim 5, wherein the upper end of the recess is recessed from the opening end of the third opening. 7. A support comprises an insulating substrate, a second gate electrode layer formed on the insulating substrate, and a second insulating layer formed on the insulating substrate including on the second gate electrode layer. The opening further includes a fourth opening provided in the second insulating layer so as to communicate with the third opening, and the second gate electrode layer is exposed at the bottom of the fourth opening. The cold cathode field emission device according to claim 1. 8. The cold cathode field emission device according to claim 7, wherein an upper end of the fourth opening is recessed from an opening end of the third opening. 9. An inter-layer insulating layer formed on an insulating layer including a gate electrode layer, and a focusing electrode layer formed on the inter-layer insulating layer, wherein the opening communicates with the first opening. The cold cathode according to claim 1, further comprising: a fifth opening provided in the interlayer insulating layer, and a sixth opening provided in the focusing electrode layer so as to communicate with the fifth opening. Field electron emission device. 10. An electron emission layer, an insulating layer, and a gate electrode layer are laminated on a support in this order, and an opening is provided from the gate electrode layer to the surface of the support. It comprises a first opening provided in the electrode layer, a second opening provided in the insulating layer, and a third opening provided in the electron emitting layer, wherein the first opening, the second opening and the third opening are provided. The thickness of the opening end of the third opening from which electrons are emitted decreases toward the tip end, and the lower edge of the opening end of the third opening is upper. A cold cathode field emission device characterized by being receded from an edge. 11. The cold cathode field emission device according to claim 10, wherein an upper edge of an opening end of the third opening protrudes from a lower end of the second opening. 12. The cold cathode field emission device according to claim 10, wherein the support comprises an insulating substrate. 13. The cold cathode field emission device according to claim 12, wherein a concave portion is provided in a portion of the insulating substrate immediately below the third opening. 14. The method according to claim 13, wherein the upper end of the recess is located at a position aligned with the upper edge of the opening end of the third opening or is retracted from the upper edge. Cold cathode field emission device. 15. A support comprises an insulating substrate, a second gate electrode layer formed on the insulating substrate, and a second insulating layer formed on the insulating substrate including on the second gate electrode layer. The opening further includes a fourth opening provided in the second insulating layer so as to communicate with the third opening, and the second gate electrode layer is exposed at the bottom of the fourth opening. The cold cathode field emission device according to claim 10. 16. An upper end of the fourth opening is located at a position aligned with an upper edge of the opening end of the third opening or is retracted from the upper edge. 16. The cold cathode field emission device according to item 15. 17. An inter-layer insulating layer formed on an insulating layer including on a gate electrode layer, and a focusing electrode layer formed on the inter-layer insulating layer, wherein the opening communicates with the first opening. The cold cathode according to claim 10, further comprising: a fifth opening provided in the interlayer insulating layer as described above; and a sixth opening provided in the focusing electrode layer so as to communicate with the fifth opening. Field electron emission device. 18. A step of forming an electron emission layer and an insulating layer on a support, a step of forming a gate electrode layer on an insulating layer, and a step of forming a gate electrode on at least a lower end. Forming, in the insulating layer, a second opening recessed from the opening end of the first opening provided in the layer; and (d) etching the electron emission layer exposed at the bottom of the second opening. Forming a third opening in the electron emission layer, the opening end of which is recessed from the opening end of the first opening. 19. The method according to claim 19, wherein the support comprises an insulating substrate, and after the step (d), the method further comprises: (e) forming a concave portion in the portion of the insulating substrate immediately below the third opening. A method for manufacturing the cold cathode field emission device according to claim 18. 20. The method according to claim 19, wherein in the step (e), the upper end of the concave portion is retracted from the open end of the third opening by isotropically etching the insulating substrate.
5. The method for manufacturing a cold cathode field emission device according to item 1. 21. A support comprising: an insulating substrate; a second gate electrode layer formed on the insulating substrate; and a second insulating layer formed on the insulating substrate including the second gate electrode layer. (F) forming a fourth opening in the portion of the second insulating layer immediately below the third opening and exposing the second gate electrode layer at the bottom of the fourth opening; 20. The method according to claim 18, further comprising: 22. In the step (f), the second insulating layer is isotropically etched so that the upper end of the fourth opening is formed in the third insulating layer.
The method of manufacturing a cold cathode field emission device according to claim 21, wherein the opening is retracted from an end of the opening. 23. Following the step (a), a step of forming an interlayer insulating layer on the entire surface, a step of forming a focusing electrode layer on the interlayer insulating layer, and a step of forming a fifth opening in the interlayer insulating layer. In the step (c), the second communication with the fifth opening is performed.
19. The method according to claim 18, wherein the opening is formed in the insulating layer.
5. The method for manufacturing a cold cathode field emission device according to item 1. 24. (a) a step of forming an electron emission layer and an insulating layer on a support; (b) a step of forming a gate electrode layer on the insulating layer; and (c) a step provided on the gate electrode layer. Forming a second opening communicating with the first opening in the insulating layer; and (d) etching the electron emission layer exposed at the bottom of the second opening so that the thickness of the opening end is reduced to the tip. Forming a third opening in the electron-emitting layer, wherein the third opening is reduced toward the portion and the lower edge of the opening end is receded from the upper edge in the electron-emitting layer. Method. 25. The method according to claim 25, wherein the support comprises an insulating substrate, and after the step (d), the method further comprises: (e) forming a concave portion in the portion of the insulating substrate immediately below the third opening. A method for manufacturing the cold cathode field emission device according to claim 24. 26. In the step (e), the upper end of the concave portion is aligned with the upper edge of the opening end of the third opening or is retracted from the upper edge by etching the insulating substrate. The method of manufacturing a cold cathode field emission device according to claim 25, wherein 27. A support comprising: an insulating substrate; a second gate electrode layer formed on the insulating substrate; and a second insulating layer formed on the insulating substrate including the second gate electrode layer. (F) forming a fourth opening in the portion of the second insulating layer immediately below the third opening and exposing the second gate electrode layer at the bottom of the fourth opening; The method according to claim 24, further comprising: 28. In the step (f), the second insulating layer is etched so that the upper end of the fourth opening is aligned with the upper edge of the opening end of the third opening, or The method according to claim 27, wherein the cold cathode field emission device is retracted. 29. Following the step (a), a step of forming an interlayer insulating layer on the entire surface, a step of forming a focusing electrode layer on the interlayer insulating layer, and a step of forming a fifth opening in the interlayer insulating layer are performed. In the step (c), the second communication with the fifth opening is performed.
The opening is formed in the insulating layer.
5. The method for manufacturing a cold cathode field emission device according to item 1. 30. A plurality of pixels, each pixel comprising: a plurality of cold cathode field emission devices; an anode electrode layer provided on the substrate facing the plurality of cold cathode field emission devices; and a phosphor. Each of the cold cathode field emission devices is a cold cathode field emission display device in which an electron emission layer, an insulating layer, and a gate electrode layer are laminated on a support in this order, An opening is provided from the gate electrode layer to the surface of the support; the opening is provided in the first opening provided in the gate electrode layer, the second opening provided in the insulating layer, and provided in the electron emission layer; The first opening, the second opening, and the third opening are in communication with each other, and the opening end of the third opening from which electrons are emitted is the first opening. Cold cathode field emission display device characterized by being receded from the opening end of the device . 31. A plurality of pixels, each pixel comprising: a plurality of cold cathode field emission devices; an anode electrode layer provided on a substrate facing the plurality of cold cathode field emission devices; and a phosphor. Each of the cold cathode field emission devices is a cold cathode field emission display device in which an electron emission layer, an insulating layer, and a gate electrode layer are laminated on a support in this order, An opening is provided from the gate electrode layer to the surface of the support; the opening is provided in the first opening provided in the gate electrode layer, the second opening provided in the insulating layer, and provided in the electron emission layer; The first opening, the second opening, and the third opening are in communication with each other, and the thickness of the opening end of the third opening from which electrons are emitted is the tip end. , And the lower edge of the opening end of the third opening retreats from the upper edge. Cold cathode field emission display, characterized in that there.