JP2000269332A - Semiconductor device, manufacture thereof and contact between conductive layers - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to form via parts, contact parts and the like even though pretreatment filling of holes is not performed, thus to make it possible to raise also the yield of products. SOLUTION: A conductive oxide metal film 3 which shows a conductivity even though oxidized, or its oxide film 12 is formed on a lower wiring layer 5 or a semiconductor substrate or the like, which is used as the bottoms of via plugs 10 inserted in an LIS multilayer wiring or the like and the bottoms of contact holes. Thereafter, an interlayer insulating film 6 is laminated on the substrate and holes 8, such as vias, are bored until the surface of the film 3 or the oxide film is exposed to perform filling of the via parts and the like without a pretreatment.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a method of manufacturing the same, and a method of contacting between conductive layers. And a method of contacting between conductive layers.

[0002]

2. Description of the Related Art In a technology for manufacturing an integrated circuit such as an LSI, it is essential to provide a contact hole or a via hole between a substrate and a wiring or between wiring layers and to make a contact between the two.

Here, a method of forming a via portion in a multilayer wiring in a conventional semiconductor device manufacturing process will be described by taking a via as an example.

FIG. 4 is a manufacturing process diagram showing a conventional via forming method.

First, the steps up to the step of forming a via will be described.

As shown in FIG. 4A, a lower metal wiring 102 is formed on an insulating film 101 formed on a substrate 100.

Next, as shown in FIG. 4B, after an interlayer insulating film 103 is deposited and flattened, etching is performed using the patterned resist 105 as a mask, and the upper part of the lower metal wiring 102 is removed. Holes are opened until they appear, and holes 104 for embedding via plugs are formed.

After completion of the above-described via hole forming step, the substrate 100
Is released to the atmosphere. This release to the atmosphere
This is performed to remove the resist 105 remaining on the interlayer insulating film 103. That is, after release to the atmosphere, high-temperature oxygen O
_By flowing ₂ on the substrate, the resist 105 is removed.

As shown in FIG. 4C, the lower metal wiring 10 exposed at the bottom of the via plug embedding hole 104 is exposed to the atmosphere and the high-temperature oxygen flowing step.
2 is oxidized to form an insulating metal oxide 106.

If the insulating metal oxide 106 is at the bottom of the via hole, electrical connection cannot be made when the via plug is buried. Therefore, it is general to perform pre-processing before embedding the via plug to remove the insulating metal oxide 106 and then embedding the via plug.

In the prior art, a method of embedding a via plug portion of an LSI multilayer wiring includes a selective tungsten CVD method in which tungsten is selectively grown by CVD on a plug portion, a blanket tungsten CVD method in which tungsten is grown on the entire surface of a substrate by CVD, and a method of embedding a plug. There are three types of aluminum reflow sputtering, in which plugs are formed by embedding aluminum by reflow sputtering without using tungsten for embedding. Therefore, a method of removing the insulating metal oxide 106 to bury the via plug portion and a problem at this time will be described below.

First, the selective tungsten CVD method will be described.

In the selective tungsten CVD method, the insulating metal oxide 106 is removed by RIE using a chlorine-based gas. Then, tungsten is selectively grown only on the aluminum exposed at the bottom of the hole, and a plug is embedded.

However, as the via diameter decreases and the aspect ratio increases with the miniaturization of LSI, it becomes difficult to remove the metal oxide at the bottom of the via hole by etching in the pretreatment. It is becoming difficult to obtain via resistance.

Next, the blanket tungsten CVD method will be described.

In the blanket tungsten CVD method,
First, the insulating metal oxide 106 is removed by reverse sputtering using Ar gas, and Ti or TiN of a tungsten adhesion layer is deposited by sputtering. On this, tungsten is deposited by CVD to bury the via portion.

Also in this case, the insulating metal oxide 106 may not be completely removed by reverse sputtering, or the interlayer insulating film 103 may be redeposited on the bottom of the via to increase the electric resistance and decrease the yield. is there.

Finally, the aluminum reflow sputtering method will be described.

In the aluminum reflow sputtering method,
First, the insulating metal oxide 106 is removed by reverse sputtering using Ar gas, and a layer of Ti or TiN is deposited as a liner material of aluminum by sputtering. A via plug is buried by reflow sputtering aluminum.

Also in this case, the insulating metal oxide 106 may not be completely removed by reverse sputtering, or the interlayer insulating film 103 may be redeposited on the bottom of the via to increase the electric resistance and decrease the yield. is there.

[0021]

In the conventional method of manufacturing a semiconductor device, in the step of manufacturing the via portion, the bottom portion of the hole is oxidized by opening to the air after the opening of the hole, and an insulating natural oxide film is formed. I can do it. For this reason, a natural oxide film is removed in order to obtain appropriate pretreatment conditions, and the electrical conductivity of the buried portion is restored. However, if the removal of the oxide film is not successful, it is difficult to improve the yield.

Although the above-described technique has been described with respect to vias between wiring layers, there is a similar situation, for example, in the case of a contact between a substrate and a wiring layer. That is, the same problem as described above arises when connecting the conductor materials in an LSI.

The present invention has been made in view of such circumstances, and can form a via portion, a contact portion, and the like without performing a pretreatment for filling a hole, thereby improving a product yield. It is an object of the present invention to provide a semiconductor device that can be made to operate, a method of manufacturing the same, and a method of contacting between conductive layers.

[0024]

The gist of the present invention is an LSI
After forming an oxide-conductive metal film or an oxide film that is conductive even if oxidized, on the lower wiring such as the bottom of via plugs of multilayer wiring or the bottom of contact holes or on a semiconductor substrate, etc. An interlayer insulating film is stacked, a hole such as a via is opened until the surface of the metal film or the oxide film is exposed, and the via portion or the like is buried without any pretreatment.

Therefore, even if the metal film at the bottom of a hole such as a via becomes an oxide, it has electrical conductivity, and the bottom portion is originally made of an oxide film having electrical conductivity. Even if the bottom portion of the hole is oxidized by opening to the atmosphere, the conductivity of the bottom portion is not lost, and a via portion or the like can be formed without performing a pretreatment of filling the hole, and the yield can be secured. be able to.

[0027] The above-mentioned object can be more specifically achieved by the following means.

First, the invention corresponding to claim 1 is a step of forming a conductive film made of a metal which exhibits conductivity even when oxidized on a conductive material, and forming a conductive film on a surface including the conductive film. A step of depositing an interlayer insulating film, a step of etching the interlayer insulating film using a patterned resist as a mask, and forming a hole exposing the conductive film on the surface; And a step of embedding a material without pretreatment.

The present invention is provided with such means.
Vias and contact portions can be formed without performing pre-processing for filling the holes, and the product yield can be improved.

Next, the invention according to claim 2 is a step of forming a metal film on an insulating film provided on a substrate, and using a metal which is conductive even when oxidized on the metal film as a material. A step of forming a conductive film, a step of forming a wiring by etching the metal film and the conductive film using the patterned resist as a mask, a step of depositing an interlayer insulating film after removing the resist, and a step of: A step of forming a via hole exposing the conductive film on the surface by etching the interlayer insulating film using the resist as a mask, and embedding a conductive filler in the via hole without pre-processing after removing the resist. And a method for manufacturing a semiconductor device.

The present invention provides such means,
The via portion can be formed without performing the pre-processing for filling the hole, and the product yield can be improved.

According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the second aspect, wherein the metal film has a laminated structure of either titanium or aluminum.

The present invention is provided with such means.
The same effect as the invention corresponding to claim 2 can be obtained.

A fourth aspect of the present invention is a method of manufacturing a semiconductor device according to the first to third aspects, wherein the metal serving as the filler is any one of tungsten, aluminum, and titanium. .

The present invention is provided with such means.
The same effect as the invention corresponding to claims 1 to 3 can be obtained.

On the other hand, the invention corresponding to claim 5 is the invention according to claims 1 to 4, wherein the conductive film made of a metal which exhibits conductivity even when oxidized is a simple substance of the metal, This is a method for manufacturing a semiconductor device including either an oxide or a mixture of a simple substance of the metal and the oxide.

According to the present invention, such means are provided.
In addition to having the same effect as the invention corresponding to claims 1 to 4,
For example, in the case where a metal oxide is used as the conductive film, since the oxide is originally used, the conductivity is maintained without changing even when the metal film is opened to the atmosphere.

Next, the invention corresponding to claim 6 is the invention according to claim 5, wherein the metal exhibiting conductivity even when oxidized has an electrical resistivity of 100 [μΩ ·
m] or less.

According to the present invention, such means are provided.
The same effect as the invention corresponding to claim 5 can be obtained.

According to a seventh aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the sixth aspect, wherein the metal exhibiting conductivity even when oxidized is one of Ru, Re, and Ir. It is.

The present invention is provided with such means.
The same effect as the invention corresponding to claim 6 can be obtained.

Next, an invention according to claim 8 is a semiconductor device in which an interlayer insulating film is provided between one conductive material and another conductive material, wherein the semiconductor device is provided on the one conductive material. In addition, a hole is provided in the conductive layer made of a metal which exhibits conductivity even when oxidized, and an interlayer insulating film so as to reach the conductive layer from another conductive material, and the hole is filled. And a conductive filler material.

According to the present invention, such means are provided.
In the manufacturing process, a via portion, a contact portion, and the like can be formed without performing a pretreatment for filling a hole, and the product yield can be improved.

According to a ninth aspect of the present invention, there is provided a semiconductor device in which an interlayer insulating film is provided between a metal wiring on an insulating film provided on a substrate and another metal wiring. A via hole is provided in the provided conductive layer made of a metal exhibiting conductivity even when oxidized, and an interlayer insulating film so as to reach the conductive layer from another metal wiring.
And a conductive filler filled in the via hole.

The present invention is provided with such means.
In the manufacturing process, the via portion can be formed without performing a pretreatment for filling the hole, and the product yield can be improved.

Further, the invention corresponding to claim 10 is the semiconductor device according to claim 9, wherein the metal wiring has a laminated structure of either titanium or aluminum.

Since the present invention is provided with such means,
An effect similar to that of the invention corresponding to claim 9 can be obtained.

On the other hand, an invention corresponding to claim 11 is the semiconductor device according to claims 8 to 10, wherein the metal serving as the filler is any one of tungsten, aluminum and titanium.

The present invention provides such means,
The same effect as the invention corresponding to claims 8 to 10 can be obtained.

According to a twelfth aspect of the present invention, in the invention according to the eighth to eleventh aspects, the conductive layer made of a metal which exhibits conductivity even when oxidized is a simple substance of the metal, The semiconductor device is formed using any of an oxide and a mixture of a simple substance of the metal and the oxide.

The present invention is provided with such means.
In addition to providing the same effects as the inventions corresponding to claims 8 to 11, the same effects as the invention corresponding to claim 5 are also provided.

According to a thirteenth aspect of the present invention, in the invention according to the twelfth aspect, the metal exhibiting conductivity even when oxidized has a metal oxide having an electrical resistivity of 100%.
[ΜΩ · m] or less.

The present invention is provided with such means.
The same effect as that of the invention corresponding to claim 12 can be obtained.

A fourteenth aspect of the present invention is a semiconductor device according to the thirteenth aspect, wherein the metal exhibiting conductivity even when oxidized is one of Ru, Re, and Ir. .

The present invention is provided with such means.
The same effects as the invention according to claim 13 can be obtained.

On the other hand, according to a fifteenth aspect of the present invention, when an interlayer insulating film is provided between a semiconductor substrate or a metal wiring and another metal wiring, an electric conduction between the two is ensured. In the conductive interlayer contact method of a semiconductor device, a conductive layer made of a metal that is conductive even when oxidized is deposited on a semiconductor substrate or a metal wiring, and the surface of the conductive layer is exposed in an interlayer insulating film. Thus, a hole is provided between the conductive layer and another metal wiring, and the hole is filled with a conductive filler.

The present invention is provided with such means.
In the manufacturing process, a via portion, a contact portion, and the like can be formed without performing a pretreatment for filling a hole, and the product yield can be improved.

According to a sixteenth aspect of the present invention, in the invention according to the fifteenth aspect, the conductive layer made of a metal exhibiting conductivity even when oxidized is a simple substance of the metal, a metal oxide thereof. Or a conductive layer contact method for a semiconductor device comprising a mixture of a simple substance of the metal and an oxide.

[0058]

Embodiments of the present invention will be described below.

(First Embodiment of the Invention) FIG. 1 is a view showing an example of a manufacturing process of a semiconductor device according to a first embodiment of the present invention.

In this embodiment, a case where a via is formed between metal wiring layers of a semiconductor device will be described. This semiconductor device is characterized in that, as shown in FIG. 1, an electrically conductive metal layer such as ruthenium 3 is provided on a metal wiring on which a via plug is provided.

That is, ruthenium (Ru) is used at room temperature for 7.
It has an electrical resistivity of 4 [μΩ · cm], and its oxide RuO ₂ (ruthenium oxide) has an electrical resistivity of 40 [μΩ · cm] at room temperature, which is almost the same as that of ordinary metals. Shows metal. Therefore, these metals are particularly called oxide electrically conductive metals. When Ru having such properties is formed on the upper part of the metal wiring and the via is formed, when the hole of the via is opened and then opened to the atmosphere, the bottom of the hole made of the oxide electrically conductive metal is formed. Part is
RuO ₂ 3 having the same electrical resistivity as metal is obtained.
Therefore, unlike the related art, an insulating oxide layer is not generated at the interface between the wiring and the via plug, and the process of removing the insulating material at the bottom of the plug, which is required in the conventional process, becomes unnecessary.

Hereinafter, a specific manufacturing process of the semiconductor device of the present embodiment will be described with reference to FIG.

First, as shown in FIG. 1A, 6000 Å of aluminum 2 is deposited on an insulating film 1 formed on a semiconductor substrate 11 by a sputtering method.

Next, about 500 Å of ruthenium 3 is deposited by a sputtering method. Further, the wiring is patterned by the resist 4 on the antireflection film.

Next, as shown in FIG. 1B, using the resist 4 as a mask, the aluminum 2 and the ruthenium 3 are etched by RIE to form the wiring 5.

Next, after removing the resist 4, FIG.
As shown in FIG. 1C, an interlayer insulating film 6 is deposited on the wiring, the surface is flattened, and a via hole is patterned with a resist 7. Further, using the resist 7 as a mask, the interlayer insulating film 6 is etched by RIE to form a hole 8 for a via plug. At this time, the bottom of the hole 8 of the via plug is opened so as to be a layer of ruthenium 3 in the laminated structure of aluminum 2 and ruthenium 3 of the wiring 5.

Thereafter, the semiconductor substrate is released to the atmosphere, and the resist 7 is removed. Since the substrate is open to the atmosphere,
As shown in (c), the surface of the layer of ruthenium 3 at the bottom of the hole 8 of the via plug is naturally oxidized to RuO ₂ 9.

Thereafter, as shown in FIG. 1D, a via plug 10 is buried in the hole 8 of the via plug without performing a pretreatment by using a selective growth CVD method of tungsten.

Thus, a series of steps for forming a via is completed.

As described above, according to the semiconductor device, the manufacturing method thereof, and the conductive interlayer contact method according to the embodiment of the present invention, the metal film having electrical conductivity even if oxidized is formed at the bottom of the via hole. The insulating material cannot be formed even if the film is opened to the atmosphere after the hole is opened and the film at the bottom of the via hole is oxidized. As a result, via plugs that are electrically connected can be embedded without any pre-processing.

Further, since the plug can be formed without performing the pre-processing for embedding the via plug, it is possible to omit the steps and to improve the yield while securing good via characteristics.

Further, the throughput can be improved, and the pretreatment process such as etching can be omitted, so that the optimization and the like become unnecessary, and the effects such as the increase of the process margin can be obtained.

(Second Embodiment of the Invention) FIG. 2 is a view showing an example of a manufacturing process of a semiconductor device according to a second embodiment of the present invention. The description is omitted here, and only different parts will be described here.

This embodiment also describes a case where a via is formed between metal wiring layers of a semiconductor device. The features of this embodiment are as follows.
As shown in FIG. 2, instead of ruthenium in the first embodiment, ruthenium oxide RuQ ₂ 12 is deposited on aluminum 2 from the beginning. By doing so, there is no particular change in RuQ ₂ 12 even when the RuQ ₂ 12 is opened to the atmosphere.

Hereinafter, a specific manufacturing process of the semiconductor device of this embodiment will be described with reference to FIG.

First, as shown in FIG. 2A, 6000 Å of aluminum 2 is deposited on an insulating film 1 formed on a semiconductor substrate 11 by a sputtering method. Next, about 500 Å of RuO ₂ 12 is deposited by sputtering. Further, wiring is patterned with a resist 4 on the antireflection film.

Next, as shown in FIG. 2B, aluminum 2 and RuO ₂ 12 are formed using this resist 4 as a mask.
Is etched by RIE to form the wiring 5.

Next, after removing the resist 4, FIG.
As shown in FIG. 1C, an interlayer insulating film 6 is deposited on the wiring 5 to planarize the surface, and the resist 7 is used to pattern via holes. Further, the interlayer insulating film 6 is etched by RIE using the resist 7 as a mask to form a via plug hole 8. At this time, the bottom of the hole 8 of the via plug is formed of RuO ₂ of the laminated structure of aluminum 2 and RuO ₂ 12 of the wiring 5.
_2. Drill holes to make 12 layers.

Thereafter, the semiconductor substrate is released to the atmosphere, and FIG.
The resist 7 is removed as shown in FIG. Even if the substrate is released to the atmosphere, the RuO ₂ 1
The surface of the two layers is originally an oxide and there is no chemical change. That is, there is no further oxidation by opening to the atmosphere, and the electrical characteristics do not change.

Thereafter, as shown in FIG. 2D, via plugs 10 are buried in the holes 8 of the via plugs by using a selective growth CVD method of tungsten without performing a pretreatment.

Thus, a series of steps for forming a via is completed.

As described above, according to the semiconductor device, the manufacturing method thereof, and the conductive interlayer contact method according to the embodiment of the present invention, the bottom portion of the via hole is made of a metal having electrical conductivity even if oxidized. Since the oxide film is provided, the conductivity can be maintained without changing the electrical characteristics of the bottom of the via hole even when the via hole is opened after forming the via hole. Thereby, the same effect as in the case of the first embodiment can be obtained.

The present invention is not limited to the above embodiments, but can be variously modified without departing from the gist thereof.

For example, in each embodiment, the present invention has been described in the case of forming a via. However, even in the case of forming a contact between a substrate and a wiring, the present invention can be applied using the same steps as in the embodiment. Can be. In addition, the present invention can be applied to the case of connecting between electrically conductive material layers in a semiconductor device.

In the first embodiment, the oxide electrically conductive film formed on the wiring is made of a single metal,
In the embodiment, a metal oxide is used. The present invention may be any of these, but may be a mixture of a metal and a metal oxide.

Further, in each of the embodiments, the case where ruthenium Ru is used as the oxide electrically conductive metal has been described. However, the property that the electrical resistivity of the oxide is about 100 [μΩ · cm] or less is used. The present invention can be applied to any substance having.

FIG. 3 is a diagram showing an example of an oxide electrically conductive metal applicable to the present invention.

FIG. 9 shows that, in addition to ruthenium, rhenium Re
(Rhenium oxide Re) and iridium Ir (iridium oxide Ir) are exemplified.

The material used for the metal wiring is not limited to aluminum, but may be an aluminum alloy or another metal.

As a method for forming a substance using oxide electrical conductivity, a CVD method and other various methods used in semiconductor manufacturing can be applied. Further, the method of embedding the via plug is not limited to the method described in the embodiment, and various methods such as a blanket tungsten CVD method, an aluminum reflow sputtering method, and a selective tungsten growth method can be applied. Also, as a material of the via plug, copper Cu, polycrystalline silicon poly-Si, or the like can be used in addition to tungsten and aluminum.

Further, in each embodiment, the case of connection between two wiring layers has been described. However, the present invention can be applied to the case of connection between three or more layers by repeating similar steps.

[0092]

As described above in detail, according to the present invention, an oxide-conductive metal film showing conductivity even if oxidized or the oxide film thereof is provided at the bottom of a via hole or a contact hole. To provide a semiconductor device capable of forming a via portion, a contact portion, and the like without performing a pretreatment for filling a hole, thereby improving a product yield, a method of manufacturing the same, and a method of contacting a conductive layer. Can be.

[Brief description of the drawings]

FIG. 1 is a view showing an example of a manufacturing process of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating an example of a manufacturing process of a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a diagram showing an example of an electrically conductive oxide metal applicable to the present invention.

FIG. 4 is a manufacturing process diagram showing a conventional via forming method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Insulating film layer 2 ... Aluminum film 3 ... Ruthenium film 4 ... Wiring patterning 5 ... Wiring 6 ... Interlayer insulating film 7 ... Via patterning 8 ... Via plug hole 9 ... Ruthenium oxidized by opening to the atmosphere 10 ... Tungsten plug 11 ... Substrate 12 ... RuO ₂

 ────────────────────────────────────────────────── ─── front page of continued F-term (reference) 4M104 BB02 BB04 BB14 BB18 BB36 DD37 DD43 DD46 FF13 FF21 HH20 5F033 JJ04 JJ08 JJ11 JJ18 JJ19 KK07 KK08 KK09 KK18 KK35 MM05 PP06 PP07 PP15 PP18 QQ08 QQ09 QQ10 QQ13 QQ37 WW00 XX33

Claims (16)

[Claims] A step of forming a conductive film made of a metal exhibiting conductivity even when oxidized on a conductive substance; and a step of depositing an interlayer insulating film on a surface including the conductive film. Etching the interlayer insulating film using the patterned resist as a mask to form a hole exposing the conductive film on the surface; and, after removing the resist, pre-treating the hole with a conductive filler. And embedding without performing the method. 2. a step of forming a metal film on an insulating film provided on a substrate; and a step of forming a conductive film on the metal film, the material being made of a metal that exhibits conductivity even when oxidized. Forming a wiring by etching the metal film and the conductive film using a patterned resist as a mask, depositing an interlayer insulating film after removing the resist, and using the patterned resist as a mask, Forming a via hole exposing the conductive film on the surface by etching the interlayer insulating film, and embedding a conductive filler in the via hole without pre-processing after removing the resist. A method for manufacturing a semiconductor device, comprising: 3. The method according to claim 2, wherein the metal film has a laminated structure of either titanium or aluminum. 4. The method for manufacturing a semiconductor device according to claim 1, wherein the metal serving as the filler is any one of tungsten, aluminum, and titanium. 5. The conductive film made of a metal that exhibits conductivity even when oxidized is made of any one of a simple substance of the metal, a metal oxide thereof, and a mixture of the simple substance of the metal and an oxide. The method according to claim 1, wherein:
13. The method for manufacturing a semiconductor device according to claim 1. 6. The metal which exhibits conductivity even when oxidized,
6. The method according to claim 5, wherein the metal oxide has an electric resistivity of 100 [μΩ · m] or less. 7. The metal exhibiting conductivity even when oxidized,
7. The method for manufacturing a semiconductor device according to claim 6, wherein the semiconductor device is one of Ru, Re, and Ir. 8. A semiconductor device in which an interlayer insulating film is provided between one conductive material and another conductive material, wherein the conductive material is provided on the one conductive material even if it is oxidized. A conductive layer made of a metal as shown in the drawing, and a hole is provided in the interlayer insulating film so as to reach the conductive layer from the other conductive substance, and a conductive material filled in the hole is provided. A semiconductor device comprising a filler. 9. A semiconductor device in which an interlayer insulating film is provided between a metal wiring on an insulating film provided on a substrate and another metal wiring, the semiconductor device being provided on the metal wiring even if it is oxidized. A conductive layer made of a metal having conductivity; and a via hole provided in the interlayer insulating film so as to reach the conductive layer from the other metal wiring, and filling the via hole. A semiconductor device, comprising: a conductive filler material; 10. The semiconductor device according to claim 9, wherein said metal wiring has a laminated structure of either titanium or aluminum. 11. The semiconductor device according to claim 8, wherein the metal serving as the filler is any one of tungsten, aluminum, and titanium. 12. The conductive layer made of a metal exhibiting conductivity even when oxidized is made of any one of a simple substance of the metal, a metal oxide thereof, and a mixture of the simple substance of the metal and an oxide. The semiconductor device according to claim 8, wherein: 13. The metal exhibiting conductivity even when oxidized has an electrical resistivity of 100 [μΩ · m] of the metal oxide.
13. The semiconductor device according to claim 12, wherein: 14. The semiconductor device according to claim 13, wherein the metal exhibiting conductivity even when oxidized is one of Ru, Re, and Ir. 15. When an interlayer insulating film is provided between a semiconductor substrate or a metal wiring and another metal wiring,
A method for contacting a conductive layer of a semiconductor device for securing electrical conduction between the two, comprising: depositing a conductive layer made of a metal exhibiting conductivity even when oxidized on the semiconductor substrate or the metal wiring; A hole is provided in the insulating film so that the surface of the conductive layer is exposed and between the conductive layer and the other metal wiring, and the hole is filled with a conductive filler. A method for contacting a conductive layer of a semiconductor device. 16. The conductive layer made of a metal exhibiting conductivity even when oxidized is made of any of a simple substance of the metal, a metal oxide thereof, and a mixture of the simple substance of the metal and an oxide. The method for contacting a conductive layer of a semiconductor device according to claim 15, wherein: