JP2000269263A - Discrimination of ball type wire bonding quality and method of ball type wire bonding - Google Patents
Discrimination of ball type wire bonding quality and method of ball type wire bondingInfo
- Publication number
- JP2000269263A JP2000269263A JP6883699A JP6883699A JP2000269263A JP 2000269263 A JP2000269263 A JP 2000269263A JP 6883699 A JP6883699 A JP 6883699A JP 6883699 A JP6883699 A JP 6883699A JP 2000269263 A JP2000269263 A JP 2000269263A
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- Prior art keywords
- bonding
- ball
- ball portion
- tool
- section
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/78822—Rotational mechanism
- H01L2224/78823—Pivoting mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、二つの電極等のボ
ンディング部の相互間を細い金属線にて電気的に接続す
ると言うワイヤボンディングのうち、金属線の先端に形
成したボール部を、一方のボンディング部に対して接合
するようにしたボール式のワイヤボンディングにおい
て、その接合の良否を判別する方法、及び、ボール式ワ
イヤボンディング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method in which a bonding portion such as two electrodes is electrically connected to each other by a thin metal wire. The present invention relates to a method of judging the quality of the bonding in a ball-type wire bonding to be bonded to the bonding portion of the above, and a ball-type wire bonding method.
【０００２】[0002]
【従来の技術】一般に、ワイヤボンディングの一つに、
ボール式のワイヤボンディング方法があり、このボール
式のワイヤボンディング方法は、従来から良く知られて
いるように、ホーンに取付けたボンディングツールにて
金属線を略鉛直状に支持し、この金属線の下端に、放電
等による溶融にてボール部を形成し、このボール部を、
前記ボンディングツールの下降動にて、半導体チップに
おける電極等のボンディング部の表面に対して接触（ワ
ークタッチ）し、次いで、このボール部を所定のボンデ
ィング荷重で潰し変形しながら超音波振動を印加するこ
とを所定のボンディング時間にわたって行うことによ
り、ボール部を前記ボンディング部に接合するように
し、この接合が完了すると、ボンディング荷重の付与と
超音波振動の印加とを停止したのち前記ボンディングツ
ールが金属線をクランプしない状態で上昇動すると言う
方法である。2. Description of the Related Art Generally, one of wire bonding is as follows.
There is a ball-type wire bonding method. As is well known, the ball-type wire bonding method supports a metal wire in a substantially vertical shape with a bonding tool mounted on a horn, and At the lower end, a ball portion is formed by melting by electric discharge or the like, and this ball portion is
The lowering movement of the bonding tool makes contact (work touch) with the surface of a bonding portion such as an electrode on a semiconductor chip, and then applies ultrasonic vibration while crushing and deforming the ball portion with a predetermined bonding load. Is performed for a predetermined bonding time so that the ball portion is bonded to the bonding portion. When the bonding is completed, the application of the bonding load and the application of the ultrasonic vibration are stopped, and then the bonding tool is connected to the metal wire. Is moved upward without clamping.
【０００３】この場合、従来のボール式ワイヤボンディ
ング方法においては、前記ボンディング時間を、常に、
一定にするように設定している。In this case, in the conventional ball wire bonding method, the bonding time is always set to
It is set to be constant.
【０００４】[0004]
【発明が解決しようとする課題】しかし、前記金属線の
先端におけるボール部は、金属線を放電等にて溶融する
ことによって形成するために、その直径には、大きい小
さいのバラ付きが存在し、しかも、前記ボール部は、金
属線に軸線に対して偏芯している場合があるが、前記従
来のボール式ワイヤボンディング方法は、ボール部の直
径のバラ付き偏芯に関係なく、ボンディング時間を常に
一定にするように構成している。However, since the ball portion at the tip of the metal wire is formed by melting the metal wire by electric discharge or the like, there is a large and small variation in the diameter. Moreover, the ball portion may be eccentric with respect to the axis with respect to the metal wire. However, the conventional ball-type wire bonding method requires a bonding time irrespective of the eccentricity of the diameter of the ball portion. Is always constant.
【０００５】このために、従来のボール式ワイヤボンデ
ィング方法では、ボール部の直径が小さい場合には、当
該ボール部に対する単位面積当たりのボンディング荷重
が大きくてボール部の潰れ変形が早くなることにより、
所定のボンディング時間を経過したとき、ボール部の潰
し変形量が、ボール部をその直径のバラ付き及び偏芯等
にかかわらずボンディング部からはみ出すことなく確実
に接合することができる最適潰し変形量を超えて過剰に
なるから、ボンディング部からはみ出しボンディング部
以外の箇所にダメージを及ぼしたり、電気的なショート
が発生したりすることになる。[0005] For this reason, in the conventional ball-type wire bonding method, when the diameter of the ball portion is small, the bonding load per unit area with respect to the ball portion is large and the crushing deformation of the ball portion is accelerated.
When a predetermined bonding time has elapsed, the amount of crushing deformation of the ball portion is determined to be the optimum amount of crushing deformation that can reliably join the ball portion without protruding from the bonding portion regardless of variation in diameter and eccentricity. Since the excess is exceeded, the portion protruding from the bonding portion may be damaged, and an electrical short may occur.
【０００６】また、ボール部の直径が大きい場合には、
当該ボール部に対する単位面積当たりのボンディング荷
重が小さくてボール部の潰れ変形が遅くなることによ
り、前記した所定のボンディング時間では、ボール部の
潰し変形量を前記最適潰し変形量にすることができず、
ボンディング不良が発生するのであり、更にまた、ボー
ル部が金属線に軸線に対して偏芯している場合にも、ボ
ール部が潰し変形が早くなり、その潰し変形量が最適潰
し変形量を超えて過剰になるから、ボンディング部から
はみ出すことになる言う問題があった。When the diameter of the ball portion is large,
Since the bonding load per unit area for the ball portion is small and the crushing deformation of the ball portion is delayed, the crushing deformation amount of the ball portion cannot be set to the optimum crushing deformation amount in the above-described predetermined bonding time. ,
Insufficient bonding occurs, and when the ball is eccentric to the metal wire with respect to the axis, the ball is crushed and deformed quickly, and the crushing deformation exceeds the optimal crushing deformation. There is a problem that it is protruded from the bonding portion because it becomes excessive.
【０００７】本発明は、ボール式のワイヤボンディング
において、ボール部のボンディング部に対する接合の良
否を容易に判別できる方法と、前記の問題を確実に低減
できるようにしたボール式ワイヤボンディング方法とを
提供することを技術的課題とするものである。The present invention provides a method of easily determining whether a ball is bonded to a bonding portion in ball-type wire bonding, and a ball-type wire bonding method capable of reliably reducing the above-mentioned problem. Is a technical task.
【０００８】[0008]
【課題を解決するための手段】この技術的課題を達成す
るため本発明の判別方法は、「金属線の先端に形成した
ボール部を、ボンディングツールの下降動にて、ボンデ
ィング部に対して接触し所定のボンディング荷重で潰し
変形しながら超音波振動を印加して接合するようにした
ボール式のワイヤボンディングにおいて、前記ボンディ
ングツールの高さ位置を検出して、前記ボール部の潰し
変形量を演算し、この値を、前記ボール部をボンディン
グ部に対して接合するときにおける最適潰し変形量と比
較することを特徴とする。」ものである。In order to achieve this technical object, a discriminating method according to the present invention comprises the steps of "contacting a ball formed at the tip of a metal wire with a bonding part by descending movement of a bonding tool. In a ball-type wire bonding in which ultrasonic vibrations are applied while being crushed and deformed with a predetermined bonding load, the height position of the bonding tool is detected, and the amount of crushing deformation of the ball portion is calculated. Then, this value is compared with an optimum amount of crushing deformation when the ball portion is bonded to the bonding portion. "
【０００９】また、本発明のワイヤボンディング方法
は、「金属線の先端に形成したボール部を、ボンディン
グツールの下降動にて、ボンディング部に対して接触し
所定のボンディング荷重で潰し変形しながら超音波振動
を印加して接合するようにしたボール式のワイヤボンデ
ィングにおいて、前記ボンディングツールの高さ位置を
検出して、前記ボール部の潰し変形量を演算し、この値
が、前記ボール部をボンディング部に対して接合すると
きにおける最適潰し変形量と等しいか略等しくなるま
で、前記ボンディング荷重の付与と超音波振動の印加と
を行い、その後において前記ボンディング荷重の付与と
超音波振動の印加とを停止して前記ボンディングツール
を上昇動することを特徴とする。」ものである。The wire bonding method according to the present invention is also directed to a method of manufacturing a semiconductor device, wherein a ball portion formed at the tip of a metal wire is brought into contact with a bonding portion by a descending movement of a bonding tool and is crushed and deformed by a predetermined bonding load. In ball-type wire bonding in which sound wave vibrations are applied and joined, the height position of the bonding tool is detected and the amount of crushing deformation of the ball portion is calculated, and this value is used for bonding the ball portion. The application of the bonding load and the application of the ultrasonic vibration are performed until the amount is equal to or substantially equal to the optimal crushing deformation amount when joining to the part, and thereafter, the application of the bonding load and the application of the ultrasonic vibration are performed. Stopping and raising the bonding tool upward. "
【００１０】[0010]
【発明の作用・効果】ボール部をボンディング部に対し
て所定のボンディング荷重で潰し変形しながら超音波振
動を印加することによって接合するに際して、ボール部
の直径のバラ付き及び偏芯にかかわらずボンディング部
からはみ出すことなく確実に接合することができる最適
潰し変形量は、実験等によって予め判っている。According to the present invention, when a ball portion is bonded to a bonding portion by applying ultrasonic vibration while crushing and deforming the ball portion with a predetermined bonding load, the ball portion is bonded irrespective of variation in diameter and eccentricity of the ball portion. The optimum amount of crushing deformation that can be surely joined without protruding from the part is known in advance by experiments and the like.
【００１１】そこで、ボンディングツールの高さ位置の
検出にて当該ボンディングツールの下降動によるボール
部の潰し変形量を演算し、この値を、前記最適潰し変形
量と比較することにより、ボール部のボンディング部に
対する接合の良否を判別することができる。Therefore, by detecting the height position of the bonding tool, the amount of crushing deformation of the ball portion due to the downward movement of the bonding tool is calculated, and this value is compared with the optimum amount of crushing deformation to obtain the ball portion. It is possible to determine the quality of bonding to the bonding portion.
【００１２】また、ボンディングツールの高さ位置の検
出にて当該ボンディングツールの下降動によるボール部
の潰し変形量を演算し、この値が、前記最適潰し変形量
と等しいか略等しくなるまで、前記ボンディング荷重の
付与と超音波振動の印加とを行い、その後において前記
ボンディング荷重の付与と超音波振動の印加とを停止し
て前記ボンディングツールを上昇動することにより、前
記ボール部の潰し変形量を、当該ボンディングツールの
高さ検出に応じて、ボール部の大きい小さいのバラ付き
及び偏芯等に関係なく、最適潰し変形量に等しくするこ
とができるか、これに近似させることができるのであ
る。Further, by detecting the height position of the bonding tool, the amount of crushing deformation of the ball portion due to the downward movement of the bonding tool is calculated, and until the value is equal to or approximately equal to the optimum amount of crushing deformation. By performing the application of the bonding load and the application of the ultrasonic vibration, and thereafter stopping the application of the bonding load and the application of the ultrasonic vibration and moving the bonding tool upward, the amount of crushing deformation of the ball portion is reduced. According to the detection of the height of the bonding tool, the optimal crushing deformation amount can be made equal to or approximate to the optimum crushing deformation regardless of the large and small variation of the ball portion and the eccentricity.
【００１３】従って、本発明によると、ボール式のワイ
ヤボンディングにおいて、外観から容易に認識すること
ができなかった接合の良否を、容易に、且つ、確実に判
別することができる一方、従来のボール式ワイヤボンデ
ィング方法において、ボール部を前記許容潰し変形量を
超えて過剰に潰し変形したり、ボール部の潰し変形量が
許容潰し変形量に至らなくなったりすること、ひいて
は、ボンディング部からのはみ出し及びボンディング不
良等のワイヤボンディングミスの発生を大幅に低減でき
る効果を有する。Therefore, according to the present invention, in the ball type wire bonding, the quality of the bonding which could not be easily recognized from the external appearance can be easily and reliably determined, while the conventional ball bonding method can be used. In the type wire bonding method, the ball portion is excessively crushed and deformed beyond the allowable crushing deformation amount, or the crushing deformation amount of the ball portion does not reach the allowable crushing deformation amount, and furthermore, the protrusion from the bonding portion and This has the effect of greatly reducing the occurrence of wire bonding errors such as bonding failure.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態を、図
１〜図３の図面について説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS.
【００１５】この図において、符号１は、加熱支持盤を
示し、この加熱支持盤１の上面には、リードフレーム２
が載置され、このリードフレーム２の上面には、半導体
チップ３がマウントされている。In this figure, reference numeral 1 denotes a heating support board, and a lead frame 2 is provided on the upper surface of the heating support board 1.
The semiconductor chip 3 is mounted on the upper surface of the lead frame 2.
【００１６】符号４は、ワイヤボンディング装置を示
し、このワイヤボンディング装置４は、先端にキャピラ
リーツール等のボンディングツール５を基端に超音波発
振器６を備えたホーン７を、昇降駆動手段８にて上下動
するように構成され、更に、このワイヤボンディング装
置４は、中央制御回路９にて以下に述べるように制御さ
れて、前記半導体チップ３の上面における電極等のボン
ディング部３ａと、前記リードフレーム２におけるリー
ド端子との間を、金又はアルミニウム等の細い金属線１
０にてワイヤボンディングするのである。Reference numeral 4 denotes a wire bonding apparatus. The wire bonding apparatus 4 is provided with a horn 7 having a bonding tool 5 such as a capillary tool at a distal end and an ultrasonic oscillator 6 at a base end, and a lifting drive unit 8. The wire bonding apparatus 4 is configured to move up and down. Further, the wire bonding apparatus 4 is controlled by a central control circuit 9 as described below to form a bonding portion 3a such as an electrode on the upper surface of the semiconductor chip 3 and the lead frame. 2, a thin metal wire 1 such as gold or aluminum.
At 0, wire bonding is performed.
【００１７】すなわち、前記ホーン７の先端におけるボ
ンディングツール５に下向きの鉛直状に支持した金属線
１０の下端に、放電等の溶融にてボール部１０ａを形成
すると、前記ボンディングツール５は、その昇降駆動手
段８にて下降動を開始し、その下降動の途中におけるＡ
点で、前記ボール部１０ａを、前記半導体チップ３にお
けるボンディング部３ａに対して、所定のボンディング
荷重にて接触（ワークタッチ）し、次いで、所定のボン
ディング時間Ｔ経過後のＢ点まで、このボール部１０ａ
を前記ボンディング荷重での押圧にて潰し変形しながら
超音波発振器６にて超音波振動を印加することにより、
前記ボンディング部３ａに対して接合するのである。That is, when a ball portion 10a is formed at the lower end of the metal wire 10 vertically supported by the bonding tool 5 at the tip of the horn 7 by melting such as discharge, the bonding tool 5 is moved up and down. The descent movement is started by the driving means 8, and A in the middle of the descent movement
At this point, the ball portion 10a comes into contact with the bonding portion 3a of the semiconductor chip 3 with a predetermined bonding load (work touch), and then the ball portion 10a reaches a point B after a predetermined bonding time T has elapsed. Part 10a
By applying ultrasonic vibration with the ultrasonic oscillator 6 while crushing and deforming by pressing with the bonding load,
It is joined to the bonding part 3a.
【００１８】そして、前記Ｂ点においてボンディング部
３ａへのボール部１０ａの接合が完了すると、前記ボン
ディング荷重の付与と超音波振動の印加とを停止したの
ち、前記ボンディングツール５が、金属線１０のクラン
プを放した状態で上昇動するのである。When the bonding of the ball portion 10a to the bonding portion 3a is completed at the point B, the application of the bonding load and the application of the ultrasonic vibration are stopped, and then the bonding tool 5 It moves up with the clamp released.
【００１９】このように、前記ボール部１０ａをボンデ
ィング部３ａに対して所定のボンディング荷重で潰し変
形しながら超音波振動を印加することによって接合する
に際して、ボール部１０ａを、その直径のバラ付き及び
偏芯にかかわらずボンディング部３ａからはみ出すこと
なく確実に接合することができる最適の潰し変形量は、
実験等によって予め判っている。As described above, when the ball portion 10a is bonded to the bonding portion 3a by applying ultrasonic vibration while crushing and deforming the ball portion 10a with a predetermined bonding load, the ball portion 10a has a variation in diameter. Regardless of the eccentricity, the optimal amount of crushing deformation that can be surely joined without protruding from the bonding portion 3a is:
It is known in advance through experiments and the like.
【００２０】そこで、本発明における第１の実施の形態
では、前記ワイヤボンディング装置４に、そのホーン６
の高さ位置、ひいては、これに取付けたボンディングツ
ール５の高さ位置を検出する高さセンサー１１を設け
て、この高さセンサー１１の信号を前記中央制御回路９
に入力することにより、Ａ点からＢ点までの高さＨ、つ
まり、ボール部１０ａのボンディングツール５の下降動
による実際の潰し変形量Ｈを演算し、この実際の潰し変
形量Ｈを、前記最適潰し変形量と比較するのである。Therefore, in the first embodiment of the present invention, the horn 6 is attached to the wire bonding apparatus 4.
And a height sensor 11 for detecting the height position of the bonding tool 5 attached thereto, and a signal from the height sensor 11 is sent to the central control circuit 9.
To calculate the height H from the point A to the point B, that is, the actual amount of crushing deformation H due to the downward movement of the bonding tool 5 of the ball portion 10a. It is compared with the optimal crush deformation amount.
【００２１】この比較により、実際の潰し変形量Ｈが最
適潰し変形量よりも大きいときには、ボール部１０ａの
潰し変形は過剰で、ボンディング部３ａからはみ出して
いることが予想され、また、実際の潰し変形量Ｈが最適
潰し変形量よりも小さいときには、ボール部１０ａの潰
し変形は不足で、ボンディング不良になっていることが
予想されるから、前記の比較により、ボール部１０ａに
おける接合の良否を確実に判別することができるのであ
る。According to this comparison, when the actual crushing deformation amount H is larger than the optimum crushing deformation amount, it is expected that the crushing deformation of the ball portion 10a is excessive and protrudes from the bonding portion 3a. When the deformation amount H is smaller than the optimal crushing deformation amount, the crushing deformation of the ball portion 10a is insufficient, and it is expected that a bonding failure occurs. Can be determined.
【００２２】なお、この比較により接合が良好であると
判断されたときには、そのままワイヤボンディングを継
続するが、接合が不良であると判断されたときには、ア
ラームによる警報を発するか、警報を発すると同時にワ
イヤボンディングを中止するようにするのである。When it is determined from this comparison that the bonding is good, the wire bonding is continued as it is. When it is determined that the bonding is bad, an alarm is issued or an alarm is issued. That is, the wire bonding is stopped.
【００２３】次に、本発明における第２の実施の形態
は、前記ボンディング時間Ｔによる制御を廃止し、前記
高さセンサー１１による高さ検出に応じて、ボンディン
グツール５が前記ＡからＢ点に下降動するまでボンディ
ング荷重の付与と超音波浸透の印加とを継続し、前記ボ
ンディングツール５がＢ点まで下降動した時点で、この
前記ボンディング荷重の付与及び超音波振動の印加を停
止したのち、前記ボンディングツール５を上昇動するよ
うに制御するように構成したものである。Next, in the second embodiment of the present invention, the control based on the bonding time T is abolished, and the bonding tool 5 is moved from the point A to the point B in accordance with the height detection by the height sensor 11. The application of the bonding load and the application of the ultrasonic penetration are continued until the bonding tool 5 moves down. When the bonding tool 5 moves down to the point B, the application of the bonding load and the application of the ultrasonic vibration are stopped. The bonding tool 5 is configured to be controlled to move upward.
【００２４】このように制御することにより、ボール部
１０ａを、常にＡ点からＢ点までの高さ寸法Ｈだけ潰し
変形することができ、ひいては、前記ボール部１０ａの
潰し変形量を、当該ボール部１０ａにおける直径のバラ
付き及び偏芯等に関係なく、常に前記Ａ点からＢ点まで
の高さ寸法Ｈに揃えることができるから、この高さ寸法
Ｈの潰し変形量を、前記したように、ボール部１０ａを
その直径のバラ付き及び偏芯にかかわらずボンディング
部３ａからはみ出すことなく確実に接合することができ
る最適潰し変形量に等しくするか、これに近似する値に
設定することにより、前記ボンディングツール５の下降
動によるボール部１０ａの潰し変形量を、当該ボンディ
ングツールの高さ検出に応じて、ボール部の大きい小さ
いバラ付き及び偏芯等に関係なく、最適潰し変形量に等
しくすることができるか、これに近似させることができ
るのである。By performing such control, the ball portion 10a can always be crushed and deformed by the height dimension H from the point A to the point B, and the crushing deformation amount of the ball portion 10a can be reduced by the ball. Irrespective of the variation in diameter and the eccentricity of the portion 10a, the height dimension H from the point A to the point B can be constantly adjusted, so that the amount of crushing deformation of the height dimension H is determined as described above. By setting the ball portion 10a to be equal to or optimally equal to the optimum amount of crushing deformation capable of securely joining the ball portion 10a without protruding from the bonding portion 3a irrespective of its diameter variation and eccentricity, The amount of crushing deformation of the ball portion 10a caused by the downward movement of the bonding tool 5 is determined by detecting the height of the bonding tool and determining whether the ball portion has a large and small Regardless etc., or may be equal to the optimum crush deformation amount, it is possible to approximate to this.
【００２５】なお、前記実施の形態は、金属線１０の下
端に形成したボール部１０ａを 、半導体チップ３にお
ける電極等のボンディング部３ａに対して接合する場合
であったが、本発明は、これに限らず、金属線１０の下
端に形成したボール部１０ａ、リードフレーム２等のそ
の他の箇所におけるボンディング部に対して接合する場
合にも適用できることは言うまでもない。In the above-described embodiment, the ball portion 10a formed at the lower end of the metal wire 10 is joined to the bonding portion 3a such as an electrode in the semiconductor chip 3. The present invention is not limited to this, and it goes without saying that the present invention can be applied to a case where bonding is performed to a bonding portion at another portion such as the ball portion 10 a formed at the lower end of the metal wire 10 and the lead frame 2.
【図１】本発明の実施の形態を示すワイヤボンディング
装置の正面図である。FIG. 1 is a front view of a wire bonding apparatus showing an embodiment of the present invention.
【図２】本発明の実施の形態においてボンディングツー
ルの下降ストロークト時間との関係を示す図である。FIG. 2 is a diagram showing a relationship with a descent stroke time of a bonding tool in the embodiment of the present invention.
１ 加熱支持盤 ２ リードフレーム ３ 半導体チップ ３ａ 電極等のボンディング部 ４ ワイヤボンディング装置 ５ ボンディングツール ６ 超音波発振器 ７ ホーン ８ 昇降駆動手段 ９ 中央制御回路 １０ 金属線 １０ａ ボール部 １１ 高さセンサー DESCRIPTION OF SYMBOLS 1 Heating support board 2 Lead frame 3 Semiconductor chip 3a Bonding part of electrodes etc. 4 Wire bonding apparatus 5 Bonding tool 6 Ultrasonic oscillator 7 Horn 8 Elevation drive means 9 Central control circuit 10 Metal wire 10a Ball part 11 Height sensor
Claims (2)
ディングツールの下降動にて、ボンディング部に対して
接触し所定のボンディング荷重で潰し変形しながら超音
波振動を印加して接合するようにしたボール式のワイヤ
ボンディングにおいて、 前記ボンディングツールの高さ位置を検出して、前記ボ
ール部の潰し変形量を演算し、この値を、前記ボール部
をボンディング部に対して接合するときにおける最適潰
し変形量と比較することを特徴とするボール式ワイヤボ
ンディングの良否判別方法。1. A method in which a ball portion formed at the end of a metal wire is brought into contact with a bonding portion by a downward movement of a bonding tool, and is crushed and deformed by a predetermined bonding load while applying ultrasonic vibration to join. In the ball-type wire bonding, the height position of the bonding tool is detected, the amount of crushing deformation of the ball portion is calculated, and this value is optimized when bonding the ball portion to the bonding portion. A method of judging the quality of ball-type wire bonding, wherein the quality is compared with the amount of crushing deformation.
ディングツールの下降動にて、ボンディング部に対して
接触し所定のボンディング荷重で潰し変形しながら超音
波振動を印加して接合するようにしたボール式のワイヤ
ボンディングにおいて、前記ボンディングツールの高さ
位置を検出して、前記ボール部の潰し変形量を演算し、
この値が、前記ボール部をボンディング部に対して接合
するときにおける最適潰し変形量と等しいか略等しくな
るまで、前記ボンディング荷重の付与と超音波振動の印
加とを行い、その後において前記ボンディング荷重の付
与と超音波振動の印加とを停止して前記ボンディングツ
ールを上昇動することを特徴とするボール式ワイヤボン
ディング方法。2. A method in which a ball portion formed at the tip of a metal wire is brought into contact with a bonding portion by a downward movement of a bonding tool, and is crushed and deformed by a predetermined bonding load while applying ultrasonic vibration to join. In the ball type wire bonding, the height position of the bonding tool is detected, and the crushing deformation amount of the ball portion is calculated,
The application of the bonding load and the application of the ultrasonic vibration are performed until this value is equal to or substantially equal to the optimal crushing deformation amount when the ball portion is bonded to the bonding portion, and thereafter, the bonding load is reduced. A ball-type wire bonding method, wherein the application of the ultrasonic vibration is stopped and the bonding tool is moved upward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6883699A JP2000269263A (en) | 1999-03-15 | 1999-03-15 | Discrimination of ball type wire bonding quality and method of ball type wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6883699A JP2000269263A (en) | 1999-03-15 | 1999-03-15 | Discrimination of ball type wire bonding quality and method of ball type wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000269263A true JP2000269263A (en) | 2000-09-29 |
Family
ID=13385193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6883699A Pending JP2000269263A (en) | 1999-03-15 | 1999-03-15 | Discrimination of ball type wire bonding quality and method of ball type wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000269263A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059878A (en) * | 2007-08-31 | 2009-03-19 | Shinkawa Ltd | Bonding equipment and bonding method |
-
1999
- 1999-03-15 JP JP6883699A patent/JP2000269263A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059878A (en) * | 2007-08-31 | 2009-03-19 | Shinkawa Ltd | Bonding equipment and bonding method |
| JP4531084B2 (en) * | 2007-08-31 | 2010-08-25 | 株式会社新川 | Bonding apparatus and bonding method |
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