JP2000243229A - Electron source substrate, its manufacture and image forming device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inexpensive and highly efficient electron source substrate to obtain a flat image forming device with a large screen, capable of keeping satisfactory images for a long time. SOLUTION: This electron source base has a pair of element electrodes 2, 3 of metal formed on a glass base body 1, containing sodium with a sodium diffusion preventing layer 9 intervened and an electron emitting element of a conductive thin film 4 having an electron emitting part 5, and also has metal wirings 6, 7 to be connected to the element electrodes 2, 3 while being brought into contact with the glass base body 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electron source substrate using an electron-emitting device, a method of manufacturing the same, and an image forming apparatus using the electron source substrate.

[0002]

2. Description of the Related Art Conventionally, as an image forming apparatus using an electron-emitting device, an electron source substrate on which a large number of cold cathode electron-emitting devices are formed and an anode substrate provided with a transparent electrode and a phosphor are opposed in parallel to each other. 2. Description of the Related Art A flat-type electron beam display panel that has been exhausted is known. In such an image forming apparatus, the one using a field emission type electron emitting element is, for example,
I. Brodie, "Advanced techno
logy: flat cold-cathode CR
Ts ", Information Display, 1
/ 89, 17 (1989).

A device using a surface conduction electron-emitting device is disclosed in, for example, US Pat. No. 5,066,883. A flat-type electron beam display panel is a cathode ray tube (cathode ray tube) widely used at present.
(CRT) display devices can be made lighter and larger in screen size than display devices, and can be applied to other flat display panels such as a flat display panel using a liquid crystal, a plasma display, and an electroluminescent display. Compared with this, it is possible to provide an image with higher brightness and higher quality.

In particular, surface conduction electron-emitting devices have a simple structure and are easy to manufacture, and a large number of devices over a large area can be manufactured without going through a complicated manufacturing process utilizing photolithography as in a field emission electron-emitting device. There is an advantage that an electron source substrate in which elements are arranged and formed can be manufactured.

FIGS. 11 and 12 show Japanese Patent Application Laid-Open No. 6-34263.
6 shows an example of an electron source substrate using a surface conduction electron-emitting device disclosed in Japanese Patent Application Laid-Open No. 6-206. FIG.
Shows a plan view of a part of the electron source. Here, 7 is an upper wiring, 6 is a lower wiring, 101 is a surface conduction electron-emitting device, 8
Is an interlayer insulating layer. FIG. 12 is a perspective view of the surface conduction electron-emitting device 101 shown in FIG. In FIG. 12, 111 is a substrate, 2 and 3 are device electrodes, 4 is a conductive thin film having an electron emission portion, 5 is an electron emission portion, and the device electrodes 2 and 3 are connected to a lower wiring 6 and an upper wiring 7, respectively. And
The lower wiring 6 and the upper wiring 7 are electrically insulated by the interlayer insulating layer 8.

Here, a predetermined voltage is sequentially applied to the upper wiring 7 and the lower wiring 6 arranged in a matrix as a scanning signal and an information signal, respectively, thereby selecting a predetermined electron-emitting device located at the intersection of the matrix. Can be driven.

[0007] The electron source substrates arranged in such a matrix can be manufactured by using a relatively simple photolithography technique. However, when a larger substrate is formed, it is preferable to use a printing technique. In particular, as for the upper wiring to which a scanning signal is applied, since the amount of current flowing through the wiring increases as the number of elements connected to one line increases, a voltage drop occurs due to wiring resistance. Preferably, the resistance is as low as possible.

Japanese Patent Application Laid-Open No. 8-180797 discloses a manufacturing method for forming a wiring and an interlayer insulating layer by a screen printing method. Regarding other members, for example, Japanese Patent Application Laid-Open No. 9-17333 discloses a manufacturing method in which element electrodes are formed by an offset printing method or the like, and a manufacturing method in which a conductive thin film is formed by an inkjet method. Is disclosed in JP-A-9-69334. By using these printing techniques, a large-area electron source substrate can be easily manufactured.

Next, the surface conduction electron-emitting device will be described. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in a small-area conductive thin film formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, a device using a SnO ₂ thin film [M. I. Elinson, RadioE
ng. Electron Phys. , 10, 12
90 (1965)], [G. Dittmer: "Thi
n Solid Films ", 9, 317 (197
2)], an In ₂ O ₃ / SnO ₂ thin film [M. H
artwelland C.I. G. FIG. Fonstad:
“IEEE Trans. ED Conf.”, 5
19 (1975)], using a carbon thin film [Araki
Hisa et al .: Vacuum, Vol. 26, No. 1, p. 22, (1983)]
Have been reported by the present applicant, for example,
JP-A-56822 discloses a surface conduction electron-emitting device using a fine metal particle film of palladium oxide or the like.

In manufacturing a surface conduction electron-emitting device, it is general to form an electron-emitting portion 5 on a conductive thin film 4 by an energization process called forming. Forming means applying a DC voltage or a very slowly increasing voltage, for example, about 1 V / min, to both ends of the conductive thin film 4 and energizing the conductive thin film 4 to locally break, deform or alter the conductive thin film 4 and form a crack. Processing.

After the forming process, a voltage is applied to the conductive thin film 4 and a current is caused to flow through the element, so that electrons are emitted from the vicinity of the crack. At this time, a portion from which electrons are emitted is referred to as an electron emitting portion 5.

Further, for example, see Japanese Patent Application Laid-Open No. 7-235255.
As disclosed in Japanese Patent Application Laid-Open Publication No. H10-209, a process called an activation process is performed on an element that has completed forming, so that better electron emission can be obtained. The activation step can be performed by repeatedly applying a pulse voltage to the element in an atmosphere containing a gas of an organic substance, similarly to the forming treatment. From the organic substance present in the atmosphere, carbon or a carbon compound can be obtained. Thus, the device current _If and the emission current _Ie are significantly increased.

The surface conduction electron-emitting device manufactured through such a process has sufficient electron emission characteristics as an electron source applicable to an image forming apparatus such as a flat panel display.

Therefore, as described above, a large-area image forming apparatus, for example, a large-screen flat panel display is produced by manufacturing a large-area electron source substrate composed of surface conduction electron-emitting devices by using a printing technique. Can be realized.

[0015]

However, when an electron-emitting device having a sufficient amount of electron emission, a sufficient life, and stability is formed on a large-area electron source substrate, there are the following problems.

In order to manufacture a large-area electron source substrate at low cost, it is necessary to reduce the cost of the members to be used, and soda lime glass is preferably used as the base. However, in the surface conduction electron-emitting device, since the electron-emitting portion is formed in contact with the substrate surface, heat and electric field when the surface conduction electron-emitting device is driven are transmitted to the soda-lime glass surface, and Thermal deformation, migration of sodium ions, precipitation of sodium metal or sodium compound, and the like are likely to occur. Deformation of the substrate near the surface conduction electron-emitting device causes a change in the device structure, and precipitation of sodium changes not only the structure but also the electrical properties. Become.

Therefore, as disclosed in Japanese Patent Application Laid-Open No. 1-279538, a coating layer is formed on a soda-lime glass surface with a material containing silicon dioxide as a main component, and a surface conduction electron-emitting device is formed thereon. It is desirable to form In particular, as this coating layer, a silica layer having a thickness of about 500 nm or more or phosphorus-doped silica (PSG)
When the layer is formed, it becomes difficult for heat or an electric field during driving of the surface conduction electron-emitting device to be transmitted to the soda-lime glass substrate, and the layer can function as a sufficient sodium diffusion preventing layer.

However, this sodium diffusion preventing layer is
Not only does it block sodium diffusion from the substrate,
The diffusion of the metal disposed on the sodium diffusion preventing layer to the substrate is also suppressed. The metal mentioned here is, for example, one used as a wiring. In general, the adhesion between a metal formed by printing and firing a metal paste and a substrate is due to diffusion of the metal at a contact portion during firing. On the sodium diffusion preventing layer, the diffusion of the metal to the substrate is suppressed, so that the adhesion of the printed metal is reduced. The decrease in adhesion causes problems such as peeling and disconnection due to the difference in the coefficient of thermal expansion between the substrate and the metal, and is a remarkable problem particularly in wiring formed in a long line shape.

Furthermore, if the metal does not easily diffuse into the substrate,
When the heat treatment step is repeated, diffusion along the surface of the substrate or the interface between the substrate and another member may occur in a direction parallel to the substrate surface.

In the electron source substrate having the structure shown in FIG. 12, the diffusion in the direction parallel to the substrate surface occurs when the wiring metal is in contact with the interface between the element electrode and the substrate. When the metal of the element electrode is different from that of the element electrode, it becomes more remarkable. When the wiring metal diffuses along the interface between the device electrode and the substrate surface (the surface of the sodium diffusion preventing layer), it comes into contact with the conductive thin film. Here, when a heat treatment is further performed or an electric field for driving is applied, the wiring metal and the conductive thin film are mixed by migration due to the heat or the electric field, and the electron emission element maintains the original electron emission characteristics. Becomes difficult, causing deterioration and fluctuation of characteristics. Therefore, it was necessary to suppress the diffusion of the wiring metal at the interface as much as possible.

An object of the present invention is to solve the above-mentioned technical problems to be solved, and to manufacture a high-performance electron source substrate which is inexpensive and has improved electron emission characteristics by using a sodium diffusion preventing layer and a printed wiring, and its manufacture. It is to provide a method. Also,
Another object of the present invention is to provide a large-screen flat-type image forming apparatus capable of holding a good image for a long time by using such an electron source substrate.

[0022]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, namely, peeling of wiring metal due to weak adhesion of the wiring metal to the substrate, and diffusion of the wiring metal along the interface between the element electrode and the substrate. The purpose of the present invention is to solve the problem of deterioration of the characteristics of the electron-emitting device, and has the following configuration.

That is, a first aspect of the present invention is to have a glass substrate containing sodium, a pair of device electrodes made of metal, and an electron emission portion formed on the glass substrate with a sodium diffusion preventing layer interposed therebetween. An electron source substrate comprising: an electron-emitting device formed of a conductive thin film; and a metal wiring in contact with the glass substrate and connected to the device electrode.

The first feature of the present invention is that, as a further feature, "at least the metal wiring is not in contact with the interface between the element electrode and the sodium diffusion preventing layer." , Consisting of soda-lime glass "," the sodium diffusion preventing layer is made of a silica coating having a thickness of 500 nm or more "," the sodium diffusion preventing layer has a thickness of 500 nm
Consisting of a silica coating doped with phosphorus as described above,
"The element electrode and the metal wiring are made of different metals", "The metal wiring is made of Ag, Cu, Al, A
u "," the conductive thin film having the electron-emitting portion is made of Pd or PdO, or a mixture thereof "," the electron-emitting device Is a surface conduction electron-emitting device "," the plurality of electron-emitting devices are arranged and emits electrons in response to an input signal ", and" the plurality of electron-emitting devices are arranged in parallel and individually Having a plurality of rows of electron-emitting devices having both ends connected to the metal wiring, and further having a modulation means for applying a modulation signal to the electron-emitting devices. " connecting the pair of device electrodes of the electron-emitting devices to the m X-direction metal wires and the n-Y metal wires, and arranging the electron-emitting devices in a matrix. "

According to a second aspect of the present invention, there is provided a method of manufacturing an electron source substrate, wherein the metal wiring is formed by printing a metal paste and firing the metal paste.

According to a third aspect of the present invention, there is provided an image forming apparatus for forming an image based on an input signal, the image forming apparatus comprising at least an image forming member and any one of the above-mentioned electron source substrates.

The present invention is effective when an element having good electron emission characteristics using a sodium diffusion preventing layer is used as an electron source substrate, and is particularly effective when wiring is formed by printing. In the electron source substrate of the present invention, since the wiring is in contact with the sodium-containing glass as the base, the wiring metal is diffused into the glass base, so that peeling of the wiring metal can be prevented. Furthermore, it is possible to prevent the wiring metal from diffusing along the interface between the element electrode and the surface of the sodium diffusion preventing layer.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram (plan view) showing an example of the electron source substrate of the present invention, and shows only a part of the electron source substrate. FIG. 2 is an enlarged bird's-eye view of one electron-emitting device of the electron source substrate shown in FIG. And FIG.
FIG. 3 is a sectional view taken along the line AA ′ in FIG. 2. 1 and 2,
In FIG. 3, 1 is a substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, 5 is an electron emitting portion, 6 and 7 are wires connected to the device electrodes 2 and 3, respectively, and 8 is a wire 6 and a wire 7 9 is a sodium diffusion preventing layer, 10 is a sodium diffusion preventing layer, and 10 is a layer obtained by removing the sodium diffusion preventing layer 9.
Is a hole that exposes the surface of The wires 6 and 7 may be referred to as a Y-direction wire and an X-direction wire, respectively, in view of the coordinates in FIG. 1, and may be referred to as a lower wire and an upper wire, respectively, depending on the positional relationship with the interlayer insulating layer 8. .

As the base 1, soda lime glass generally called soda lime glass is preferably used because it is inexpensive. However, the sodium contained in the soda lime glass is partially replaced with potassium to increase the strain point. Strain point glass can be used. In any case, since the glass substrate used in the present invention contains sodium, the substrate can be formed using a float method that can be mass-produced. For example, a large-area substrate having a diagonal of 1 m or more can be formed at a low cost. It can be produced. Note that the electron source substrate of the present invention and the image forming apparatus using the same perform several heat treatment steps in the manufacturing process. At this time, the material of the base may be selected according to the setting of the heat treatment temperature and the allowable value of the distortion of the substrate at the heat treatment temperature.

The sodium diffusion preventing layer 9 has a function of preventing diffusion of sodium from the substrate 1 to the electron-emitting device and a function of preventing heat generated when a current flows through the electron-emitting device from being transmitted to the substrate 1. It is. In order to satisfy the above role, a coating layer containing silica as a main component can be preferably used as the sodium diffusion preventing layer 9. Here, silica means SiO ₂ , SiO, and a mixture thereof. Above all, a layer of SiO _{2 or} a layer made of phosphorus-doped silica glass (PSG) containing several wt% of phosphorus is more preferably used. 500n of these coating layers
When formed to a thickness of at least m, the diffusion of sodium is practically stopped, so that it functions as the sodium diffusion preventing layer 9.

The materials of the opposing element electrodes 2 and 3 are as follows.
It is preferable that the material has stable conductivity even after the subsequent heat treatment step. For example, a metal thin film mainly containing a noble metal such as Au, Pt, Pd or an alloy thereof is used. It is preferable that the film thickness of the device electrodes 2 and 3 be about several tens of nm because it has sufficient conductivity and the step coverage of the conductive thin film 4 is good. When the noble metal thin film is formed on the sodium diffusion preventing layer 9, sufficient adhesion strength may not be obtained. At this time, a base metal material such as Ti or Cr may be formed as an undercoat to improve the adhesion between the device electrodes 2 and 3 and the sodium diffusion preventing layer 9.

Since the thermal stability of the conductive thin film 4 is an important parameter that governs the lifetime of the electron emission characteristics, it is desirable to use a material having a higher melting point as the material of the conductive thin film 4. However, in general, the higher the melting point of the conductive thin film 4 is, the more difficult it is to carry out energization forming, which will be described later. further,
The resulting electron-emitting portion may have a problem that the applied voltage (threshold voltage) at which electrons can be emitted increases. Therefore, as the material of the conductive thin film 4, it is preferable to select a material having a moderately high melting point and capable of forming a good electron-emitting portion with a relatively low forming power.

Under the above-mentioned conditions, PdO can be easily formed into a thin film by baking an organic palladium compound in the air, has relatively low electric conductivity because it is a semiconductor, has low power for forming, and has a high efficiency in forming an electron emitting portion. Alternatively, thereafter, it can be easily reduced to metal palladium, so that the film resistance can be reduced. For example, it can be used as a material suitable for the conductive thin film 4. The film thickness is set in consideration of step coverage for the device electrodes 2 and 3, a resistance value between the device electrodes 2 and 3, a forming condition described later, and the like.

The electron-emitting portion 5 is a high-resistance portion such as a crack formed on a part of the conductive thin film 4 and has conductive fine particles having a particle size of several nm to several tens nm inside the crack. That is, PdO or PdO may have a large number of fine particles of Pd metal generated by reduction of PdO, and this depends on the manufacturing method such as the thickness of the conductive thin film 4 and energization processing conditions described later. The conductive fine particles are similar to some or all of the elements of the material constituting the conductive thin film 4.

Further, a part of the electron emitting portion 5 and further, the conductive thin film 4 near the electron emitting portion 5 have carbon and a carbon compound through an activation step described later. Regarding the role of the carbon and the carbon compound, the electron emitting portion 5
It is presumed that the substance that constitutes the compound governs the electron emission characteristics.

The wirings 6 and 7 are for supplying power to a plurality of electron-emitting devices as shown in FIG. The DX lines DX1, DX2,..., DXm are provided in the m X-direction wirings 7 and the DY1, DY2,. Material, film thickness, wiring width, etc. Between these m X-directional wires 7 and n Y-directional wires 6,
An interlayer insulating layer 8 is provided and electrically separated to form a matrix wiring (m and n are both positive integers).

As the wires 6 and 7, like the device electrodes 2 and 3, metals having stable conductivity even after a heat treatment step are preferable. In particular, a printing method capable of forming a large-area substrate at low cost is applied. What can be done is desirable. The metal film obtained by patterning the metal paste by screen printing and heat-treating is suitable for forming large-area wires with a small resistance of several microns or more in thickness. Ag, Cu, A, which can be obtained at relatively low cost
paste of u, that is, A obtained by heat-treating
g, Cu, and Au are preferably used. Further, a mixture of these metal pastes, or an Ag paste containing Pd, for example, may be used. In addition, the wirings 6, 7
Is a film much thicker than the device electrodes 2 and 3, and depending on the conditions of the heat treatment step, the increase in resistance due to oxidation of the surface may not be so remarkable. Can also be used.

The shape, material, film thickness, and manufacturing method of the interlayer insulating layer 8 can be appropriately set so as to withstand the potential difference at the intersection between the wiring 6 and the wiring 7, but it is preferable that the interlayer insulating layer 8 can be formed by a printing method like the wiring. A thick glass layer obtained by printing a glass paste is used.

In the configuration shown in FIG. 1, that is, in the configuration of the matrix arrangement, a scanning signal (not shown) for applying a scanning signal for selecting a row of the electron-emitting devices 5 arranged in the X direction is applied to the X-direction wiring 7. The application means is connected, and the Y-direction wiring 6 is connected to a modulation signal generation means (not shown) for modulating each column of the electron-emitting devices arranged in the Y direction according to an input signal. The driving voltage applied to each electron-emitting device is supplied as the difference voltage between the scanning signal and the modulation signal applied to the device, and individual devices can be selected and driven independently using simple matrix wiring. can do.

On the other hand, in addition to the above, each of a large number of electron-emitting devices arranged in parallel is connected at both ends, and a large number of rows of electron-emitting devices are arranged. There is a ladder-like arrangement in which electrons from the electron-emitting device are controlled and driven by a control electrode arranged above,
The present invention is not particularly limited by these arrangements.

In the present invention, the wirings 6 and 7 are connected to the device electrodes 2 and 3
A hole 10 is formed at a position where the surface of the substrate 1 is exposed by removing the sodium diffusion preventing layer 9 at a position where the layer 10 is connected. Here, the wirings 6 and 7 are in contact with the base 1.

In general, a metal formed on a substrate by printing and baking the above-mentioned metal paste has a sufficient adhesion strength when a part of the metal is diffused into the substrate. For example, it is considered that Ag printed and fired on soda lime glass adheres by diffusing while replacing Na ions and Ag ions in the glass. However, on the sodium diffusion preventing layer 9 used in the present invention, that is, on the silica or phosphorus-doped silica coating, the diffusion of metal into the coating does not proceed so much.
It was found that the adhesion strength was reduced. If the adhesion strength decreases, there is no problem with a small pattern of printed metal,
In the case of a long wire such as a wiring, a stress is generated after the heat treatment process due to a difference in thermal expansion coefficient between the formed metal and the glass of the substrate, and the wire is disconnected or peeled off.

Therefore, it is preferable that at least a part of the wiring is brought into contact with the soda lime glass of the base to provide a portion having a strong adhesion strength. In the present invention, the contact portion between the wiring and the base is provided for each pitch of the element arrangement, so that the portion serves as an anchor, so that disconnection or peeling can be suppressed.

As shown in FIGS. 1, 2 and 3, the wirings 6 and 7 of the present invention are in contact with the device electrodes 2 and 3 only on the substrate 1. That is, the device electrodes 2 and 3
The wirings 6 and 7 are not in contact with the interface between the silicon diffusion preventing layer 9 and the wiring. Wirings 6, 7 are in contact with the interface between device electrodes 2, 3 and sodium diffusion preventing layer 9, for example, device electrodes 2, 3 are formed on sodium diffusion preventing layer 9, and wires 6, 7 are formed thereon. In the structure, a phenomenon is observed in which the metal forming the wirings 6 and 7 diffuses along the interface between the device electrodes 2 and 3 and the sodium diffusion preventing layer 9. Although the detailed mechanism of this diffusion has not been clarified, it is thought to be due to diffusion propagating through grain boundaries at the interface.

On the other hand, in the configuration in which the device electrodes 2 and 3 are formed on the soda lime glass substrate 1 and the wirings 6 and 7 are formed thereon, the above-described interface diffusion hardly occurs. In this configuration, it was found that the metal forming the wirings 6 and 7 passed through the device electrodes 2 and 3 and diffused into the soda-lime glass substrate 1. As shown in FIGS. 1, 2, and 3, the metal constituting the wirings 6 and 7 is in contact with the soda lime glass substrate 1 and is not in contact with the interface between the device electrodes 2 and 3 and the sodium diffusion preventing layer 9. Thus, interface diffusion can be prevented.

As described above, when the metal constituting the wirings 6 and 7 diffuses at the interface, the metal may eventually reach the conductive thin film 4 and further reach the electron emitting portion 5. Here, when an electric field for driving the electron-emitting device is applied, the metal constituting the wirings 6 and 7 and the conductive thin film 4 are mixed and alloyed due to migration due to the electric field and heat during driving.
Since the film quality changes, it becomes difficult for the electron-emitting device to maintain the original electron-emitting characteristics, causing deterioration and fluctuation of the characteristics. Therefore, by configuring according to the present invention, diffusion of the metal constituting the wirings 6 and 7 at the interface can be prevented, and stable electron emission characteristics can be maintained for a long time.

Now, various methods are conceivable as a method of manufacturing the electron source substrate of the present invention. One example is shown in FIG.

Hereinafter, the manufacturing method will be described in order with reference to FIGS.
This will be described based on 2, 3, 4 and FIG.

(1) Sodium-containing glass substrate 1
After washing thoroughly with detergent, pure water and organic solvent,
The sodium diffusion preventing layer 9 is formed by a sputtering method or the like (FIG. 4A). The method of forming the sodium diffusion preventing layer 9 is not limited to the sputtering method, and may be formed by another vacuum evaporation method, an electron beam evaporation method, a CVD method, or an organometallic coating material.

(2) Subsequently, the sodium diffusion preventing layer 9
At the desired position of the substrate 1 on which the element electrodes 2 are formed,
A hole 10 from which the sodium diffusion preventing layer 9 has been removed is formed at a position where the layer 3 is to be formed. The holes 10 can be formed by using a technique such as photolithography, sandblasting, or laser processing (FIG. 4B).

(3) Subsequently, the sodium diffusion preventing layer 9
After the element electrode material is deposited on the substrate 1 on which the holes 10 from which the sodium diffusion preventing layer 9 has been removed are formed by vacuum evaporation, sputtering, or the like, the element electrodes 2 and 3 are formed by photolithography (FIG. 4). (C)). The device electrodes 2 and 3 are formed using a printing technique such as offset printing.
It can also be formed by applying an organometallic paste and firing it.

(4) Base 1 on which device electrodes 2 and 3 are formed
Then, a pattern of a conductive paste is formed by a screen printing method, and the lower wiring 6 made of metal is formed by firing the pattern of the conductive paste (FIG. 4D). At this time, the lower wiring 6 is brought into contact with the element electrode 2 only in the hole 10 from which the sodium diffusion preventing layer 9 is removed as shown in FIG.

(5) Further, a desired position on the lower wiring 6,
That is, the interlayer insulating layer 8 is formed at a position intersecting with the upper wiring 7 to be formed in a subsequent step (FIG. 5E). The interlayer insulating layer 8 can also be formed by forming a glass paste pattern by a screen printing method and firing the glass paste pattern. In order to increase the film thickness in order to provide the interlayer insulating layer 8 with sufficient insulating properties,
The above printing and baking can be repeated a desired number of times.

(6) Subsequently, the upper wiring 7 is formed so as to cross on the interlayer insulating layer 8 formed on the lower wiring 6 (FIG. 5 (f)). Similarly to the lower wiring 6, the upper wiring 7 can be formed by forming a conductive paste pattern and firing the conductive paste pattern.

(7) A solution of an organometallic compound is applied between the device electrode 2 and the device electrode 3 provided on the base 1 and dried to form a film made of the organometallic compound. Thereafter, the organometallic compound film is heated and baked, patterned by lift-off, etching, or the like,
The conductive thin film 4 is formed (FIG. 5G). Note that, here, the description has been made with the application method of the organometallic solution, but the present invention is not limited thereto, and is formed by a vacuum evaporation method, a sputtering method, a CVD method, a dispersion coating method, a dipping method, a spinner method, an inkjet method, or the like. In some cases.

(8) Subsequently, when an energizing process called forming is performed by applying a pulsed voltage or a rising voltage from a power supply (not shown) to a voltage between the element electrodes 2 and 3, that is, between the wirings 6 and 7, An electron emitting portion 5 having a changed structure is formed at a portion of the conductive thin film 4 (FIG. 5H). A portion where the conductive thin film 4 is locally destroyed, deformed or deteriorated by the energization treatment and a crack structure is formed is referred to as an electron emitting portion 5.

In the forming process, there are a case where a pulse having a constant pulse peak value is applied and a case where a voltage pulse is applied while increasing the pulse peak value. First, FIG. 6A shows a voltage waveform when a pulse having a constant pulse height is applied. In FIG. 6A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, and T1 is 1 μsec.
〜１０10 msec, T2 is 10 μsec to 100 msec
And the peak value of the triangular wave (peak voltage during forming)
Is appropriately selected.

Next, FIG. 6B shows a voltage waveform when a voltage pulse is applied while increasing the pulse peak value. In FIG. 6B, T1 and T2 are the pulse width and pulse interval of the voltage waveform, and T1 is 1 μsec to 10 msec.
c, T2 is set to 10 μsec to 100 msec, and the peak value of the triangular wave (beak electrician at the time of forming) is increased by, for example, about 0.1 V steps. The forming process is performed at a voltage that does not locally break or deform the conductive thin film 4 during the forming pulse.
The device current is measured by inserting a pulse voltage of about 1 V, and the process ends when the current decreases below a predetermined value.

(9) Next, an activation process is performed on the element for which the forming has been completed. The activation process is performed by applying a pulse voltage in the same manner as the above-described forming process in an atmosphere containing an organic substance.
It is obtained by disposing an electron source substrate in a vacuum vessel and introducing an appropriate organic substance. When a vacuum envelope is formed using an electron source substrate as in a screen forming apparatus described later, an activation process can be performed by introducing an organic substance into the vacuum envelope.

Suitable organic substances include alkane, alkene, alkyne fatty hydrocarbons, aromatic hydrocarbons,
Alcohols, aldehydes, ketones, amines, nitriles, phenols, carboxyls, organic acids such as sulfonic acids, etc. can be mentioned. Specifically, methane, ethane, propane and the like C _n H _{2n + 2} Represented by saturated hydrocarbons,
Ethylene, propylene C _n H _2n such unsaturated hydrocarbon represented by composition formula such as benzene, toluene, methanol,
Ethanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methylamine, ethylamine, phenol, benzonitrile, acetonitrile,
Formic acid, acetic acid, propionic acid and the like can be used.

By this treatment, carbon or a carbon compound is deposited on the device from organic substances existing in the atmosphere,
The element current _If and the emission current _Ie change remarkably. The end of the activation step is determined by determining the device current _If and / or
_{Alternatively} , the measurement is appropriately performed while measuring the emission current _Ie . The pulse width, pulse interval, pulse crest value, and the like are set as appropriate.

Carbon and carbon compounds include, for example, graphite (including so-called HOPG, PG, and GC; HO
PG refers to a crystal structure of almost perfect graphite, PG refers to a crystal grain of about 20 nm and has a slightly disordered crystal structure, and GC refers to a crystal grain of about 2 nm and has a further disordered crystal structure. ), Amorphous carbon (refers to amorphous carbon and a mixture of amorphous carbon and the microcrystals of graphite).

(10) On the electron source substrate thus manufactured,
Preferably, a stabilization step is performed. This step is a step of exhausting a residue of the organic substance introduced during the activation treatment. The pressure in the vacuum vessel is 1.3 to 4.0 × 10 ⁻⁵ Pa
Or less, more preferably 1.3 × 10 ⁻⁶ Pa or less. The evacuation device that evacuates the vacuum container is designed so that the oil generated from the device does not affect the characteristics of the element.
It is preferable to use one that does not use oil.

Specifically, a vacuum pumping device such as a sorption pump or an ion pump can be used. Further, when evacuating the inside of the vacuum vessel, it is preferable that the entire vacuum vessel is heated so that the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron source substrate are easily evacuated. The heating condition at this time is desirably 80-250 ° C., preferably 150 ° C. or more, and it is desirable that the heating be performed for as long as possible. However, the heating condition is not particularly limited to this condition, and the size and shape of the vacuum vessel, the configuration of the electron source substrate, etc. This is performed under conditions appropriately selected according to various conditions.

It is preferable that the atmosphere during driving after the stabilization step is performed is the same as that after the above stabilization processing, but the present invention is not limited to this. However, even if the pressure itself slightly increases, sufficiently stable characteristics can be maintained.

By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed.
As a result, the element current _If and the emission current _Ie are stabilized.

The above is the manufacturing process of the electron source substrate in the present invention. An example in which an image forming apparatus is configured using the electron source substrate will be described below with reference to FIGS. FIG.
Is a basic configuration diagram of an image forming member of the image forming apparatus, and FIG. 8 shows a fluorescent film.

In FIG. 7, reference numeral 61 denotes an electron source substrate on which a plurality of electron-emitting devices are arranged; 62, a rear plate to which the electron source substrate 61 is fixed; 67, a glass substrate (rear plate substrate) 6;
4 is a face plate in which a fluorescent film 65 and a metal back 66 are formed on the inner surface. Reference numeral 63 denotes a support frame, and the support frame 63 includes a rear plate 62 and a face plate 6.
7 are connected using frit glass or the like. Reference numeral 69 denotes an envelope.
By baking for 10 minutes or more in the temperature range of ~ 500 ° C,
It is constructed by sealing.

The envelope 69 is composed of the face plate 67, the support frame 63, and the rear plate 62 as described above. However, the rear plate 62 is provided mainly for the purpose of reinforcing the strength of the substrate 61. If the substrate itself has sufficient strength, the separate rear plate 62 is unnecessary, and the substrate 6
1, a support frame 63 is directly sealed, and a face plate 67,
The envelope 69 may be constituted by the support frame 63 and the substrate 61.

On the other hand, by providing a support (not shown) called a spacer between the face plate 67 and the rear plate 62, an envelope 69 having sufficient strength against atmospheric pressure can be formed. .

FIG. 8 shows a fluorescent film. The fluorescent film 65 is made of only a phosphor in the case of monochrome, but is made of a black conductive material 71 called a black stripe or a black matrix depending on the arrangement of the phosphor and a phosphor 72 in the case of a color fluorescent film. . The purpose of providing the black stripes and the black matrix is to make the mixed portions of the three primary color phosphors necessary for the color display between the respective phosphors 72 black so that color mixing and the like are inconspicuous. In suppressing a decrease in contrast due to reflection of external light. The material of the black stripe is not limited to a commonly used material containing graphite as a main component, as long as it is conductive and has little light transmission and reflection. As a method of applying the phosphor on the glass substrate 64, a precipitation method, a printing method, or the like is used regardless of monochrome or color.

A metal back 66 is usually provided on the inner side of the fluorescent film 65. The purpose of the metal back is to improve the brightness by mirror-reflecting the light emitted from the phosphor toward the inner surface side to the face plate 67 side, to function as an electrode for applying an electron beam acceleration voltage, This is to protect the phosphor from damage due to collision of negative ions generated in the enclosure. The metal back can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum evaporation or the like. The face plate 67 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 65 in order to further enhance the conductivity of the fluorescent film 65. When performing the above-mentioned sealing, in the case of color, since it is necessary to make each color phosphor correspond to the electron-emitting device,
It is necessary to perform sufficient alignment.

The envelope 69 is passed through an exhaust pipe (not shown)
After the degree of vacuum is set to about 1.3 × 10 ⁻⁵ Pa, sealing is performed. In addition, getter processing may be performed to maintain the degree of vacuum after sealing the envelope 69. this is,
Immediately before or after sealing of the envelope 69, a getter disposed at a predetermined position (not shown) in the envelope 69 is heated by a heating method such as resistance heating or high-frequency heating to form a vapor-deposited film. Is a process of forming Getter is usually Ba
Are the main components, and maintain a vacuum degree of, for example, 1.3 × 10 ⁻³ Pa or 1.3 × 10 ⁻⁵ Pa by the adsorption action of the deposited film.

In the image forming apparatus of the present invention completed as described above, a voltage is applied to each electron-emitting device through the external terminals Dox1 to Doxm and Doy1 to Doyn, thereby emitting electrons. An image is displayed by applying a high voltage of several kV or more to the metal back 66 or a transparent electrode (not shown), accelerating the electron beam, colliding the electron beam with the fluorescent film 65, exciting and emitting light.

The configuration described above is a schematic configuration necessary for producing a suitable image forming apparatus used for display and the like, and detailed portions such as materials of each member are limited to those described above. Instead, it is appropriately selected so as to be suitable for the use of the image forming apparatus.

The image forming apparatus of the present invention includes a display device for a television broadcast, a display device such as a video conference system and a computer, and an image forming device as an optical printer using a photosensitive drum or the like. Can also be used.

[0077]

EXAMPLES Hereinafter, the present invention will be described in detail with reference to specific examples, but the present invention is not limited to these examples, and each element within a range in which the object of the present invention is achieved. This also includes those in which substitutions or design changes have been made.

Embodiment 1 The basic structure of the electron source substrate according to this embodiment is the same as that shown in FIGS. 1, 2 and 3. The method of manufacturing the electron source substrate in this embodiment is shown in FIGS. Hereinafter, the basic configuration and manufacturing method of the image forming apparatus according to the present invention will be described with reference to FIGS. 1, 2, 4, and 5. FIGS. 4 and 5 show the manufacturing process in the vicinity of one electron-emitting device in an enlarged manner for the sake of simplicity. This embodiment is an example of an electron source substrate in which a large number of electron-emitting devices are arranged in a simple matrix. .

Step-a A resist material is applied on a substrate in which a 1.0 μm thick SiO ₂ film is formed as a sodium diffusion preventing layer 9 on a cleaned blue glass substrate 1 by a sputtering method. After that, a resist pattern having a desired opening is formed, and after sandblasting, the resist pattern is removed to remove the sodium diffusion preventing layer 9 having a desired position and shape at the hole 1.
0 is formed.

Step-b Next, a 5 nm-thick T
i, Pt having a thickness of 50 nm is sequentially deposited. Thereafter, the pattern of the device electrodes 2 and 3 is formed of photoresist, the Pt / Ti deposited layer other than the pattern of the device electrodes 2 and 3 is removed by dry etching, and finally the photoresist pattern is removed. 2 and 3 are formed.

Step-c On the substrate 1 on which the sodium diffusion preventing layer 9 and the device electrodes 2 and 3 are formed, a pattern of the wiring 6 is formed by screen printing using an Ag paste, dried, and baked at 500 ° C. , Ag of a desired shape is formed.

Step-d Next, a pattern of the interlayer insulating layer 8 is formed by screen printing using a glass paste.
Baking. In order to obtain sufficient insulating properties, printing, drying, and firing of the glass paste are repeated again to form the interlayer insulating layer 8 of glass having a desired shape.

Step-e The pattern of the upper wiring 7 is formed by screen printing using an Ag paste so as to intersect the lower wiring 6 at the portion where the interlayer insulating layer 8 is formed, dried, and fired at 500 ° C. Then, an upper wiring 7 of a desired shape made of Ag is formed.

Through the above steps, a substrate in which the element electrodes 2 and 3 are connected in a matrix by the wirings 6 and 7 can be formed.

Here, along the line AA ′ in FIG.
Electron probe microanalysis (EPMA)
Example of the result of measuring the distribution of Ag element by the method of
As shown in FIG. For comparison, a similar Ag element was formed when the device electrodes 2 and 3 and the wirings 6 and 7 were formed on the sodium diffusion preventing layer 9 without forming the hole 10 from which the sodium diffusion preventing layer 9 was removed. Fig. 1 shows an example of the distribution measurement results.
0 is shown. As can be seen from FIGS. 9 and 10, according to the present embodiment, it is found that the diffusion of Ag from the wirings 6 and 7 to the element electrodes 2 and 3 is suppressed.

Step-f Next, a conductive thin film 4 is formed so as to extend between the gaps between the device electrodes 2 and 3. The conductive thin film 4 is formed by applying an organic palladium solution to a desired position by an inkjet method, and performing a heating and baking treatment at 350 ° C. for 30 minutes. The conductive thin film 4 thus obtained contained PdO as a main component and had a thickness of about 10 nm.

Through the above steps, a sodium diffusion preventing layer 9, a lower wiring 6, an interlayer insulating layer 8, an upper wiring 7, element electrodes 2 and 3, and a conductive thin film 4 were formed on the base 1, and an electron source substrate was manufactured. .

Hereinafter, using the electron source substrate of this embodiment,
An example in which the image forming apparatus is configured will be described with reference to FIGS.

The electron source substrate 61 manufactured as described above
Is fixed on the rear plate 62, and a face plate 67 (glass substrate 64) is placed 5 mm above the electron source substrate 61.
Is formed with a fluorescent film 65 and a metal back 66 formed on the inner surface of the support plate 63 via a support frame 63, and frit glass is applied to the joint between the face plate 67, the support frame 63, and the rear plate 62, The baking was performed at 400 ° C. for 10 minutes in the air. The fixing of the electron source substrate 61 to the rear plate 62 was also performed using frit glass.

The fluorescent film 65 is made of only a phosphor in the case of monochrome, but in this embodiment, the phosphor is formed in a stripe shape, a black stripe is formed first, and each color phosphor is applied to the gap. Then, a fluorescent film 65 was manufactured. As a material for the black stripe, a material mainly containing graphite, which is generally used, was used. A slurry method was used to apply the phosphor to the glass substrate 64.

A metal back 66 is usually provided on the inner side of the fluorescent film 65. The metal back was manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after the fluorescent film was manufactured, and then vacuum-depositing Al. The face plate 67 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 65 in order to further increase the conductivity of the fluorescent film 65. In this embodiment, however, only a metal back is sufficient to provide sufficient conductivity. It is omitted because it has the property. When performing the above-mentioned sealing, in the case of color, since it is necessary to make each color phosphor correspond to the electron-emitting device,
Sufficient alignment was performed.

The atmosphere in the glass container completed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the outer terminals Dox1 to Doxm and Doy1 to Doyn. , A voltage was applied between the device electrodes 2 and 3 to form the conductive thin film 4. The voltage waveform of the forming process is shown in FIG.
Is the same as In this embodiment, T1 is set to 1 msec and T2 is set to 10 msec, and the test is performed in a vacuum atmosphere of about 1.3 × 10 ⁻³ Pa.

Next, when the pressure in the panel is 1.3 × 10 ⁻⁶ P
After exhausting until it reaches a, from the exhaust pipe of the panel,
Organic substances were introduced into the panel and maintained so that the total pressure was 1.3 × 10 ⁻⁴ Pa. Outer container terminals Dox1 to D
oxm and device electrodes 2 and 3 through Doy1 to Doyn
In the meantime, a pulse voltage of a peak value of 15 V was applied to perform an activation process.

As described above, the forming and activating processes were performed to form the electron emitting portions 5.

Next, the gas was evacuated to a pressure of about 1.3 × 10 ⁻⁴ Pa, and an exhaust pipe (not shown) was welded by heating with a gas burner to seal the envelope. Finally, gettering was performed by a high-frequency heating method in order to maintain the pressure after sealing.

In the image forming apparatus of the present invention completed as described above, each of the electron-emitting devices is provided with an external terminal Dox1.
A scanning signal and a modulation signal are applied from a signal generating means (not shown) through Doxm, Doy1 to Doyn, respectively, thereby emitting electrons, and a voltage of 5 kV or more is applied to a metal back 66 or a transparent electrode (not shown) through a high voltage terminal 68. The high voltage was applied to accelerate the electron beam, collided with the fluorescent film 65, and excited and emitted light to display an image.

The image forming apparatus according to the present embodiment was able to stably display a good image for a long time at a luminance (about 150 fL) which was sufficiently satisfactory for a television.

Embodiment 2 The basic configuration of an electron source substrate according to this embodiment is the same as that of Embodiment 1.

Step-a A resist material is applied on a substrate in which a 1.0 μm-thick phosphorus-doped silica glass (PSG) film is formed as a sodium diffusion preventing layer 9 on a cleaned blue glass substrate 1 by a CVD method. After baking, a resist pattern having a desired opening is formed, and RIE using CF ₄ and H ₂ gas is performed.
After the dry etching process by the (Reactive Ion Etching) method, the resist pattern is removed to form a hole 10 having a desired position and shape from which the sodium diffusion preventing layer 9 has been removed.

Step-b Next, a 5 nm-thick T
i, Pt having a thickness of 50 nm is sequentially deposited. Thereafter, the pattern of the device electrodes 2 and 3 is formed of photoresist, the Pt / Ti deposited layer other than the pattern of the device electrodes 2 and 3 is removed by dry etching, and finally the photoresist pattern is removed. 2 and 3 are formed.

Step-c On the substrate 1 on which the sodium diffusion preventing layer 9 and the device electrodes 2 and 3 are formed, a pattern of the wiring 6 is formed using an Ag paste by screen printing, dried, and fired at 500 ° C. Then, a wiring 6 having a desired shape made of Ag is formed.

Step-d Next, a pattern of the interlayer insulating layer 8 is formed by screen printing using a glass paste.
Baking. In order to obtain sufficient insulating properties, printing, drying, and firing of the glass paste are repeated again to form the interlayer insulating layer 8 of glass having a desired shape.

Step-e The pattern of the upper wiring 7 is formed by screen printing using an Ag paste so as to intersect the lower wiring 6 at the portion where the interlayer insulating layer 8 is formed, dried, and fired at 500 ° C. Then, an upper wiring 7 of a desired shape made of Ag is formed.

Through the above steps, a substrate in which the device electrodes 2 and 3 are connected in a matrix by the wires 6 and 7 can be formed.

Here, along the line AA ′ in FIG.
Electron probe microanalysis (EPMA)
When the distribution of the Ag element was measured by the method shown in FIG.
And similar results were obtained. For comparison, a similar Ag element was formed when the device electrodes 2 and 3 and the wirings 6 and 7 were formed on the sodium diffusion preventing layer 9 without forming the hole 10 from which the sodium diffusion preventing layer 9 was removed. When we measured the distribution,
The same result as in FIG. 10 was obtained. From the above, it is understood that the diffusion of Ag from the wirings 6 and 7 to the element electrodes 2 and 3 is suppressed by the present embodiment.

Step-f Next, the conductive thin film 4 is formed so as to extend between the gaps between the device electrodes 2 and 3. The conductive thin film 4 is formed by applying an organic palladium solution to a desired position by an inkjet method, and performing a heating and baking treatment at 350 ° C. for 30 minutes. The conductive thin film 4 thus obtained contained PdO as a main component and had a thickness of about 10 nm.

Through the above steps, the sodium diffusion preventing layer 9, the lower wiring 6, the interlayer insulating layer 8, the upper wiring 7, the device electrodes 2, 3, and the conductive thin film 4 were formed on the base 1, and an electron source substrate was manufactured. .

Thereafter, an image forming apparatus was constructed using the electron source substrate of the present embodiment in the same manner as in the first embodiment. Even in the image forming apparatus of the present embodiment, the luminance (about 150 fL ), A good image could be stably displayed for a long time.

[0109]

As described above, according to the present invention,
It is possible to use a sodium diffusion preventing layer used for improving the electron emission characteristics while preventing peeling of the wiring metal and a printed wiring capable of easily forming a large-area electron source substrate at low cost. Thus, an inexpensive and high-performance electron source substrate can be realized. Further, a flat screen image forming apparatus having a large screen capable of holding a good image for a long time, for example, a color flat television can be realized by using the apparatus.

[Brief description of the drawings]

FIG. 1 is a plan view showing an example of an electron source substrate of the present invention.

FIG. 2 is a bird's-eye view near the electron-emitting device of the electron source substrate of the present invention.

FIG. 3 is a sectional view showing the vicinity of an electron-emitting device of the electron source substrate of the present invention.

FIG. 4 is a view for explaining a basic method for manufacturing an electron source substrate according to the present invention.

FIG. 5 is a view for explaining a basic method of manufacturing an electron source substrate according to the present invention.

FIG. 6 is a diagram illustrating an example of a voltage waveform in a forming process according to the present invention.

FIG. 7 is a diagram illustrating a basic configuration of an image forming apparatus according to the present invention.

FIG. 8 is a diagram illustrating a fluorescent film used in the image forming apparatus of FIG. 7;

FIG. 9 is a diagram illustrating the effect of the present invention in an example.

FIG. 10 is a comparative diagram illustrating the effect of the present invention in an example.

FIG. 11 is a plan view showing a configuration of a conventional electron source substrate.

FIG. 12 is a bird's-eye view showing a configuration of a conventional electron source substrate.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 base 2, 3 element electrode 4 conductive thin film 5 electron emitting portion 6, 7 wiring 8 interlayer insulating layer 9 sodium diffusion preventing layer 10 hole from which sodium diffusion preventing layer is removed 61 electron source substrate 62 rear plate 63 outer frame 64 rear plate Substrate 65 Fluorescent film 66 Metal back 67 Face plate 68 High voltage terminal 69 Vacuum envelope 71 Black conductor 72 Phosphor 101 Electron emitting device

Claims (14)

[Claims] An electron emission device comprising: a glass substrate containing sodium; and a conductive thin film having a pair of metal device electrodes and an electron emission portion formed on the glass substrate via a sodium diffusion preventing layer. An electron source substrate comprising: an element; and a metal wiring in contact with the glass substrate and connected to the element electrode. 2. The electron source substrate according to claim 1, wherein at least the metal wiring is not in contact with an interface between the device electrode and the sodium diffusion preventing layer. 3. The electron source substrate according to claim 1, wherein the glass substrate containing sodium is made of soda lime glass. 4. The sodium diffusion preventing layer has a thickness of 5%.
The electron source substrate according to any one of claims 1 to 3, wherein the electron source substrate comprises a silica coating having a thickness of 00 nm or more. 5. The electron source according to claim 1, wherein the sodium diffusion preventing layer containing silica as a main component is made of a phosphorus-doped silica film having a thickness of 500 nm or more. substrate. 6. The electron source substrate according to claim 1, wherein said element electrode and said metal wiring are made of different metals. 7. The metal wiring is made of Ag, Cu, Al, A
The electron source substrate according to any one of claims 1 to 6, wherein the electron source substrate is made of any metal of u or an alloy containing any metal. 8. The conductive thin film having the electron emitting portion,
The electron source substrate according to any one of claims 1 to 7, comprising Pd to PdO, or a mixture thereof. 9. The electron source substrate according to claim 1, wherein said electron-emitting device is a surface conduction electron-emitting device. 10. A plurality of said electron-emitting devices are arranged,
The electron source substrate according to claim 1, wherein electrons are emitted in response to an input signal. 11. A plurality of electron-emitting devices are arranged in parallel, each device has a plurality of rows of electron-emitting devices having both ends connected to the metal wiring, and a modulation signal is applied to the electron-emitting devices. The electron source substrate according to claim 10, further comprising a modulation unit. 12. A pair of device electrodes of the electron-emitting device are connected to m X-direction metal wires and n-Y metal wires electrically insulated from each other, and the electron-emitting devices are arranged in a matrix. The electron source substrate according to claim 10, wherein the electron source substrate is arranged in a shape. 13. The method for manufacturing an electron source substrate according to claim 1, wherein the metal wiring is formed by printing a metal paste and heating and firing the metal paste. Manufacturing method. 14. An image forming apparatus for forming an image based on an input signal, comprising at least an image forming member and the electron source substrate according to any one of claims 1 to 12. Image forming device.