JP2000241787A - Manufacturing device for liquid crystal display device and manufacture therefor - Google Patents

Manufacturing device for liquid crystal display device and manufacture therefor

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Publication number
JP2000241787A
JP2000241787A JP11046406A JP4640699A JP2000241787A JP 2000241787 A JP2000241787 A JP 2000241787A JP 11046406 A JP11046406 A JP 11046406A JP 4640699 A JP4640699 A JP 4640699A JP 2000241787 A JP2000241787 A JP 2000241787A
Authority
JP
Japan
Prior art keywords
substrate
electrode
counter electrode
measuring device
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11046406A
Other languages
Japanese (ja)
Inventor
Hiromasa Morita
浩正 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Display Inc
Original Assignee
Advanced Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Display Inc filed Critical Advanced Display Inc
Priority to JP11046406A priority Critical patent/JP2000241787A/en
Publication of JP2000241787A publication Critical patent/JP2000241787A/en
Pending legal-status Critical Current

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  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a device for grasping a charged state on a substrate after plasma treatment and when the substrate is raised and separated from an electrode after plasma treatment, by providing a counter electrode with a switch for connecting a charge measuring instrument or a micro current measuring instrument. SOLUTION: A counter electrode 2 opposing an electrode on which a substrate 4 is placed acts as a counter electrode during plasma treatment, while it acts as a measuring probe for measuring a surface potential, etc., of the substrate 4 after the plasma treatment. A switch 7 changes over a connection between the counter electrode 2 and a high frequency power source 5 to a connection between the counter electrode 2 and a charge amount measuring instrument 6 or a micro current measuring instrument. The substrate 4 is exposed to plasma treatment in a chamber 1, and the surface of the substrate 4 is charged after the plasma treatment has been completed, therefore, there exists a potential on the substrate 4 due to the charges. Here, when the switch 7 is change over to the charge amount measuring instrument 6 from the high frequency power source 5, it becomes possible to measure the surface of the substrate 4 because there is the counter electrode 2 connected with the charge amount measuring instrument 6 right above the substrate 4.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は液晶表示素子の製造
装置および、液晶表示装置の製造方法に関するものであ
る。
The present invention relates to an apparatus for manufacturing a liquid crystal display device and a method for manufacturing a liquid crystal display device.

【0002】[0002]

【従来の技術】真空チャンバー内に生成したプラズマを
素子製造に適用する技術は、半導体や液晶表示装置の製
造工程であるCVDやドイラエッチ等の微細加工に極め
て広範に利用されている。
2. Description of the Related Art The technology of applying plasma generated in a vacuum chamber to the manufacture of devices has been used very widely in microfabrication such as CVD and doiler etching in the manufacturing process of semiconductors and liquid crystal display devices.

【0003】プラズマ(特に低温プラズマ)を利用する
プロセスには、プロセス制御性が高いので微細加工に適
している、低温ながら高エネルギーなのでプロセスの自
由度が大きい、基板の大面積化も比較的容易、といった
利点があるからであり、半導体に比べ大きな基板を使用
する液晶表示装置の製造では、特にその有用性が高い。
In a process utilizing plasma (particularly, low-temperature plasma), the process controllability is high, so that it is suitable for microfabrication. This is particularly useful in the production of a liquid crystal display device using a substrate larger than a semiconductor.

【0004】しかし、素子の微細化がすすむにつれ、素
子の耐電圧性は低下するため、プラズマによる素子の損
傷が大きな問題となってきている。
[0004] However, as the device is miniaturized, the withstand voltage of the device is reduced, and damage to the device by plasma has become a serious problem.

【0005】素子損傷の根源は、プラズマ処理中に素子
表面に電荷が帯電する現象によるものである。なかに
は、帯電しただけで損傷する場合もあれば、帯電しただ
けでは損傷しない帯電した基板をピン等により昇降する
際に損傷が発生する場合もある。
The root of device damage is due to the phenomenon that electric charges are charged on the device surface during plasma processing. In some cases, damage may be caused only by being charged, or damage may be caused when a charged substrate that is not damaged only by being charged is moved up and down by pins or the like.

【0006】上記の損傷状況には、素子の材質・形状や
プロセス条件等の要因が大きく関与するが、液晶表示装
置の製造では後者、すなわち、帯電した基板を電極から
昇離させる瞬間に素子の損傷が発生することが多い。
[0006] The above-mentioned damage situation largely depends on factors such as the material and shape of the device and the process conditions. In the manufacture of a liquid crystal display device, the latter, that is, the moment the charged substrate is lifted and separated from the electrode, is required. Damage often occurs.

【0007】液晶装置の場合、素子の加工寸法が半導体
チップの場合に比べて大きいため損傷程度は低いはずで
あるが、基板としてガラス等の絶縁性材質を用いる場合
がほとんどであり、その面積も比較的大きいことから、
基板を電極から昇離させた時の素子損傷の発生が多いと
考えられる。
In the case of the liquid crystal device, the processing size of the element is larger than that of the semiconductor chip, so that the degree of damage should be low. However, in most cases, an insulating material such as glass is used as the substrate, and the area is also large. Because it ’s relatively large,
It is considered that device damage often occurs when the substrate is lifted away from the electrodes.

【0008】このような素子の損傷を低減するには、プ
ラズマ処理後に基板上に残留する帯電量、ならびに、処
理後の基板を昇降させる際、基板上の電荷の挙動を把握
することが肝要であり、そのためには、何らかのモニタ
ー手段が必要である。
In order to reduce such damage to the element, it is important to understand the amount of charge remaining on the substrate after the plasma processing and the behavior of the charge on the substrate when raising and lowering the processed substrate. Yes, that requires some means of monitoring.

【0009】従来技術としては、以下のような技術があ
った。
As the prior art, there is the following technology.

【0010】すなわち、製品基板をプラズマ処理した後
に、真空チャンバーを大気圧にしてから基板に残留する
電荷を測定する方法や、基板を搬送により真空チャンバ
ーから取り出した後に電荷を測定する方法である。
That is, there are a method of measuring the electric charge remaining on the substrate after the vacuum chamber is brought to the atmospheric pressure after the plasma processing of the product substrate, and a method of measuring the electric charge after removing the substrate from the vacuum chamber by transportation.

【0011】さらに、上記の方法には、大気圧にしたり
搬送したりするという過程が、基板上の帯電状態に影響
を及ぼすため、正確な測定ができないという欠点がある
として、特開平6−151546号や特開平5−304
117号に示されているように、真空チャンバー内に測
定子を挿入する方法も考えられている。
Further, the above-mentioned method has a drawback that accurate measurement cannot be performed because the process of atmospheric pressure or transporting affects the charged state on the substrate. No. and JP-A-5-304
As shown in Japanese Patent No. 117, a method of inserting a probe into a vacuum chamber has been considered.

【0012】別の方法としては、特開平9−74124
号に示すように、損傷しやすい基板を故意にプラズマ処
理して、その損傷状況から、間接的に帯電状況を把握す
る方法があった。
Another method is disclosed in JP-A-9-74124.
As shown in the above item, there has been a method in which a substrate that is easily damaged is intentionally subjected to plasma processing, and the charging state is indirectly grasped from the damage state.

【0013】[0013]

【発明が解決しようとする課題】以上のように、帯電量
をモニターするための方法として、いくつかの方法が提
案されてきたが、それぞれには以下のような問題点があ
る。
As described above, several methods for monitoring the charge amount have been proposed, but each of them has the following problems.

【0014】測定子を装置内に挿入する方法は、基板の
一部分しか測定できない、プラズマ処理時にガスにより
腐食するといった欠点がある。測定子を基板全面上で走
査する方法も考えられるが、走査自体による帯電状況の
変動、測定子による放電損傷、走査に時間がかかること
による測定中の電荷の減衰、測定子挿入部からのリーク
等、別の問題が考えられる。
The method of inserting the probe into the apparatus has disadvantages that only a part of the substrate can be measured and that the probe is corroded by gas during plasma processing. A method of scanning the probe over the entire surface of the substrate is also conceivable.However, fluctuations in the charging state due to the scanning itself, discharge damage due to the probe, attenuation of charge during measurement due to the time required for scanning, and leakage from the probe insertion part Other problems are conceivable.

【0015】損傷しやすい基板を用いる方法について
は、実際の製品基板を使用する場合はその手間とコスト
が、そして、パターンや製造工程を簡略化した基板を用
いる方法については、帯電状況が必ずしも製品基板の帯
電状況を反映したものとは限らないことが問題としてあ
げられる。
In the case of using a substrate which is easily damaged, when an actual product substrate is used, the trouble and cost are required. In the case of using a substrate in which the pattern and the manufacturing process are simplified, the charging condition is not necessarily required. The problem is that the charge state of the substrate is not always reflected.

【0016】本発明は、上記のような問題点を解決し、
プラズマ処理後、ならびに、プラズマ処理後に基板を電
極から昇離させた時の基板上の帯電状況を把握するため
の装置と、その装置を用いた液晶表示装置の製造方法を
提供するものである。
The present invention solves the above problems,
It is an object of the present invention to provide an apparatus for grasping a charging state on a substrate after plasma processing and when a substrate is lifted off an electrode after plasma processing, and a method for manufacturing a liquid crystal display device using the apparatus.

【0017】[0017]

【課題を解決するための手段】本発明の請求項1にかか
わる液晶表示装置の製造装置は、真空チャンバー内に基
板を載置し、移動する電極、および、対向電極を備え、
少なくとも一方の電極に高周波電力を印加することによ
り生成するプラズマを使用する装置であって、対向電極
に帯電測定器もしくは微少電流測定器を接続するスイッ
チを備えたものである。
According to a first aspect of the present invention, there is provided an apparatus for manufacturing a liquid crystal display device, comprising: a substrate mounted in a vacuum chamber;
An apparatus that uses plasma generated by applying high-frequency power to at least one electrode, and includes a switch that connects a charge measuring device or a minute current measuring device to a counter electrode.

【0018】本発明の請求項2にかかわる液晶表示装置
の製造方法は、真空チャンバー内に基板を載置し、移動
する電極、および、対向電極を備え、少なくとも一方の
電極に高周波電力を印加することにより生成するプラズ
マを使用する装置であって、対向電極に帯電測定器もし
くは微少電流測定器を接続するスイッチを備えた液晶表
示装置の製造装置を使用し、プラズマを用いて基板に処
理を施した後、基板と対向する電極に帯電測定器もしく
は微少電流測定器を接続し、基板の表面帯電量を測定す
るようにしたものである。
According to a second aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, comprising: mounting a substrate in a vacuum chamber, including a moving electrode and a counter electrode, and applying high-frequency power to at least one of the electrodes. An apparatus that uses plasma generated by the above-described process, and uses a plasma liquid crystal display device manufacturing apparatus equipped with a switch for connecting a charge measuring device or a microcurrent measuring device to the counter electrode, and performs processing on the substrate using the plasma. After that, a charge measuring device or a minute current measuring device is connected to the electrode facing the substrate to measure the surface charge amount of the substrate.

【0019】本発明の請求項3にかかわる液晶表示装置
の製造方法は、真空チャンバー内に基板を載置し、移動
する電極、および、対向電極を備え、少なくとも一方の
電極に高周波電力を印加することにより生成するプラズ
マを使用する装置であって、対向電極に帯電測定器もし
くは微少電流測定器を接続するスイッチを備えた液晶表
示装置の製造装置を使用し、プラズマを用いて基板に処
理を施した後、ピン等により基板を昇降させる際に、基
板と対向する電極に帯電測定器もしくは微少電流測定器
を接続し、基板の表面帯電量もしくは昇降時の変位電流
を測定するようにしたものである。
According to a third aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, comprising: mounting a substrate in a vacuum chamber, including a moving electrode and a counter electrode, and applying high-frequency power to at least one of the electrodes. An apparatus that uses plasma generated by the above-described process, and uses a plasma liquid crystal display device manufacturing apparatus equipped with a switch for connecting a charge measuring device or a microcurrent measuring device to the counter electrode, and performs processing on the substrate using the plasma. After that, when raising and lowering the substrate with pins etc., a charge measuring device or a minute current measuring device is connected to the electrode facing the substrate, and the surface charge amount of the substrate or the displacement current at the time of lifting and lowering is measured. is there.

【0020】本発明の請求項4にかかわる液晶表示装置
の製造装置は、請求項1の構成において、対向電極を電
気的に複数に区分したものである。
According to a fourth aspect of the present invention, there is provided an apparatus for manufacturing a liquid crystal display device, wherein the opposing electrode is electrically divided into a plurality of parts.

【0021】本発明の請求項5にかかわる液晶表示装置
の製造方法は、請求項2の製造方法において、対向電極
を電気的に複数に区分した装置を使用するものである。
According to a fifth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device according to the second aspect, wherein a device in which the counter electrode is electrically divided into a plurality is used.

【0022】本発明の請求項6にかかわる液晶表示装置
の製造方法は、請求項3の製造方法において、対向電極
を電気的に複数に区分した装置を使用するものである。
According to a sixth aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device according to the third aspect, wherein a device in which the counter electrode is electrically divided into a plurality is used.

【0023】[0023]

【発明の実施の形態】実施例1 以下、本発明の一実施例を図1及び図2に示す。Embodiment 1 One embodiment of the present invention is shown in FIGS. 1 and 2. FIG.

【0024】図1に、本発明の実施例における液晶表示
装置の製造装置でのプラズマ処理前、プラズマ処理中お
よびプラズマ処理直後の状況を示す。
FIG. 1 shows a state before, during, and immediately after plasma processing in a liquid crystal display device manufacturing apparatus according to an embodiment of the present invention.

【0025】図2に、本発明の実施例における液晶表示
装置の製造装置でのプラズマ処理終了後、スイッチ7を
高周波電源5から帯電量測定器もしくは微少電流測定器
6へ切替えた時の状況を示す。
FIG. 2 shows a state when the switch 7 is switched from the high frequency power supply 5 to the charge amount measuring device or the minute current measuring device 6 after the plasma processing in the liquid crystal display device manufacturing apparatus in the embodiment of the present invention is completed. Show.

【0026】図1、図2における符号を以下に説明す
る。
The reference numerals in FIGS. 1 and 2 are described below.

【0027】1は、プラズマ処理を行うチャンバーであ
る。
1 is a chamber for performing a plasma process.

【0028】2は、基板の置かれた電極に対向する電極
(以下、対向電極という)であり、プラズマ処理中は対
向電極として作用するが、プラズマ処理後は、基板表面
の電位等を測定する測定子として作用する。
Reference numeral 2 denotes an electrode facing the electrode on which the substrate is placed (hereinafter referred to as a counter electrode), which acts as the counter electrode during the plasma processing, but measures the potential of the substrate surface after the plasma processing. Acts as a probe.

【0029】3は、基板の置かれた電極であり、対向電
極2と対になってプラズマを生成するとともに基板を保
持する役割を持つ。
Reference numeral 3 denotes an electrode on which the substrate is placed, which has a role of generating plasma in combination with the counter electrode 2 and holding the substrate.

【0030】4は、基板であり、液晶表示装置の製造の
場合、ガラス等の絶縁性基板を用いる。
Reference numeral 4 denotes a substrate. In the case of manufacturing a liquid crystal display device, an insulating substrate such as glass is used.

【0031】5は、高周波電源であり、通常よく用いら
れる周波数は13.56MHzである。(また、この図
においては、対向電極2に高周波電極5を接続している
が、接地していてもよい。)6は、帯電量測定器あるい
は、微少電流測定器である。
Numeral 5 is a high-frequency power supply, and a commonly used frequency is 13.56 MHz. (Although the high-frequency electrode 5 is connected to the counter electrode 2 in this figure, it may be grounded.) Reference numeral 6 denotes a charge amount measuring device or a minute current measuring device.

【0032】7は、対向電極2と、高周波電極5との接
続を対向電極2と、帯電測定器あるいは微少電流測定器
6との接続に切り替えるためのスイッチである。
Reference numeral 7 denotes a switch for switching the connection between the counter electrode 2 and the high-frequency electrode 5 to the connection between the counter electrode 2 and the charge measuring device or the minute current measuring device 6.

【0033】8は、基板を搬送アーム等で搬入・搬出す
る際に、基板を昇降させるための昇降ピンである。
Reference numeral 8 denotes an elevating pin for raising and lowering the substrate when loading and unloading the substrate with a transfer arm or the like.

【0034】9は、エッチング等のプラズマ処理を行う
ための放電を起こすガスを導入する配管であり、対向電
極2内部の配管を通して、チャンバー1内部にガスを導
入する。
Reference numeral 9 denotes a pipe for introducing a gas for generating a discharge for performing plasma processing such as etching. The gas is introduced into the chamber 1 through a pipe inside the counter electrode 2.

【0035】10は、自動圧力制御機であり、例えばオ
リフィス等により、チャバー1内部の圧力を測定値に維
持する機能を有する。
An automatic pressure controller 10 has a function of maintaining the pressure inside the chamber 1 at a measured value by using, for example, an orifice.

【0036】次に、図1、図2を用いて、帯電量測定の
各工程について説明を行う。
Next, each step of measuring the charge amount will be described with reference to FIGS.

【0037】図1は、前述の通り、プラズマ処理直前、
プラズマ処理中、及びプラズマ処理直後の状況である。
FIG. 1 shows the state immediately before the plasma treatment, as described above.
This is a situation during and immediately after the plasma processing.

【0038】図1において、基板4は、チャンバー1内
におけるプラズマ処理に曝される。プラズマ処理が完了
した後、基板4の表面は帯電しているため、基板4上に
は帯電による電位が存在する。
In FIG. 1, a substrate 4 is exposed to a plasma treatment in a chamber 1. After the plasma processing is completed, the surface of the substrate 4 is charged, so that a potential due to charging exists on the substrate 4.

【0039】しかし、この時点では、その電位を測定す
る手段が無い。
However, at this time, there is no means for measuring the potential.

【0040】ここで、スイッチ7を高周波電源5から、
対向電極2に切替えた状態を示すのが、図2である。
Here, the switch 7 is switched from the high-frequency power supply 5 to
FIG. 2 shows a state where the switching to the counter electrode 2 is performed.

【0041】図2では、基板4の直上に、帯電量測定器
6に接続した対向電極2が存在するため、基板4の表面
電位を測定することが可能となる。
In FIG. 2, since the counter electrode 2 connected to the charge amount measuring device 6 exists directly above the substrate 4, the surface potential of the substrate 4 can be measured.

【0042】ここで、プラズマ処理が完了してからスイ
ッチを切替えるまでに長時間を要した場合、基板上の電
荷が減衰・消滅する恐れがあるため、プラズマ処理直後
の帯電量を測定するにはなるべく迅速に切替えるのがよ
い。
Here, if it takes a long time from when the plasma processing is completed to when the switch is switched, the charge on the substrate may be attenuated or vanished. Therefore, to measure the charge amount immediately after the plasma processing. It is better to switch as quickly as possible.

【0043】また、測定の精度をさらに向上させるには
ゼロ点調整を行うのがよいが、タイミングとしては、プ
ラズマ処理直前にスイッチ7を高周波電源5から帯電量
測定器6に切り替えて、ゼロ点調整を行った後、すぐス
イッチ7を高周波電源5に接続し直す方法がある。
To further improve the accuracy of the measurement, it is preferable to perform the zero point adjustment. However, as the timing, immediately before the plasma processing, the switch 7 is switched from the high-frequency power supply 5 to the charge amount measuring device 6 so that the zero point is adjusted. After the adjustment, there is a method of immediately reconnecting the switch 7 to the high frequency power supply 5.

【0044】ここで、対向電極2として電気的に複数に
区分・細分化した電極を使用してもよい。
Here, an electrode which is electrically divided and subdivided into a plurality may be used as the counter electrode 2.

【0045】この場合、各区分毎に帯電量測定器もしく
は微少電流測定器を接続することになる。
In this case, a charge amount measuring device or a minute current measuring device is connected for each section.

【0046】対向電極を分割した場合の実施例を図4に
示す。
FIG. 4 shows an embodiment in which the counter electrode is divided.

【0047】図4では、帯電量測定時、すなわち、スイ
ッチ11は高周波電源5から切り離され、各区分電極毎
に帯電量測定器6に接続されており、基板4が昇降ピン
8により上昇された状況を示している。
In FIG. 4, when the charge amount is measured, that is, the switch 11 is disconnected from the high frequency power supply 5 and connected to the charge amount measuring device 6 for each of the divided electrodes, and the substrate 4 is raised by the lifting pins 8. Indicates the situation.

【0048】多数の測定器を接続するにはコストが増大
するため、各区分の測定を高速の時分割で行なう方法で
もよい。
Since connecting a large number of measuring instruments increases the cost, a method of performing high-speed time-division measurement of each section may be used.

【0049】図5に、その実施例を示す。図5では、プ
ラズマ処理と帯電量測定を切替えるためのスイッチ12
と、帯電量測定時に区分電極の1つを選択するための時
分割のスイッチ13を追加している。
FIG. 5 shows the embodiment. FIG. 5 shows a switch 12 for switching between plasma processing and charge amount measurement.
And a time-division switch 13 for selecting one of the divided electrodes when measuring the charge amount.

【0050】図5は、帯電量測定時、すなわち、スイッ
チ12は高周波電源5から切り離されて帯電量測定器6
側に接続しているため帯電量測定器6が対向電極2の分
割区域のどれか一つのみと接続されている状況を示して
いる。
FIG. 5 shows a state in which the charge amount is measured, that is, the switch 12 is disconnected from the high frequency power supply 5 and the charge amount
2 shows that the charge amount measuring device 6 is connected to only one of the divided areas of the counter electrode 2 because it is connected to the side.

【0051】ここで、時分割スイッチ13は、複数の端
子に切替えができるものなら機械式でもよいし、電子式
でもよい。
Here, the time division switch 13 may be a mechanical type or an electronic type as long as it can switch to a plurality of terminals.

【0052】このように、電気的に複数に区分・細分化
した電極を用いた場合、帯電荷の基板面内分布状況を把
握することが可能となる利点がある。
As described above, the use of the electrode which is electrically divided and subdivided into a plurality has the advantage that the distribution state of the charged charges in the substrate surface can be grasped.

【0053】実施例2次に、図1、図2、図3を用い
て、帯電量測定の各工程について説明を行う。
Embodiment 2 Next, each step of measuring the charge amount will be described with reference to FIGS. 1, 2 and 3.

【0054】図1は、前述の通り、プラズマ処理直前、
プラズマ処理中、及びプラズマ処理直後の状況である。
FIG. 1 shows the state immediately before the plasma processing, as described above.
This is a situation during and immediately after the plasma processing.

【0055】図1において、基板4は、チャンバー1内
におけるプラズマ処理によりプラズマに曝される。プラ
ズマ処理が完了した後、基板4の表面は帯電しているた
め、基板4上には帯電による電位が存在する。
In FIG. 1, the substrate 4 is exposed to plasma by plasma processing in the chamber 1. After the plasma processing is completed, the surface of the substrate 4 is charged, so that a potential due to charging exists on the substrate 4.

【0056】しかし、この時点では、その電位、電位変
化を測定する手段が無い。
However, at this time, there is no means for measuring the potential and the potential change.

【0057】ここで、スイッチ7を高周波電源5から、
対向電極2に切替えた状態を示すのが、図2である。
Here, the switch 7 is switched from the high-frequency power supply 5 to
FIG. 2 shows a state where the switching to the counter electrode 2 is performed.

【0058】図2では、基板4の直上に、帯電量測定器
もしくは微少電流測定器6に接続した対向電極2が存在
するため、基板4の表面電位もしくは変位電流を測定す
ることが可能となる。
In FIG. 2, the surface potential or displacement current of the substrate 4 can be measured because the counter electrode 2 connected to the charge amount measuring device or the minute current measuring device 6 exists directly above the substrate 4. .

【0059】次に、基板4を上昇させるために昇降ピン
8が上昇し、基板4が電極3から剥離される状況を示し
たのが、図3である。帯電した基板が動くことによる電
荷配置の変化は、電位の変化及び変位電流の発生を引き
起こすため、帯電量測定器もしくは微少電流測定器6に
よるこれらの物理量の測定により、基板上の帯電量を推
測することが可能となる。
Next, FIG. 3 shows a situation in which the lifting pins 8 are raised to raise the substrate 4 and the substrate 4 is separated from the electrodes 3. Since the change in the charge arrangement due to the movement of the charged substrate causes a change in potential and the generation of a displacement current, the amount of charge on the substrate is estimated by measuring these physical amounts using the charge amount measuring device or the minute current measuring device 6. It is possible to do.

【0060】ここで、対向電極2として電気的に複数に
区分・細分化した電極を使用してもよい。
Here, an electrode which is electrically divided and divided into a plurality of pieces may be used as the counter electrode 2.

【0061】この場合、各区分毎に帯電量測定器もしく
は微少電流測定器を接続することになる。
In this case, a charge amount measuring device or a minute current measuring device is connected for each section.

【0062】対向電極を分割した場合の実施例を図4に
示す。
FIG. 4 shows an embodiment in which the counter electrode is divided.

【0063】図4では、帯電量測定時、すなわち、スイ
ッチ11は高周波電源5から切り離され、各区分電極毎
に帯電量測定器6に接続されており、基板4が昇降ピン
8により上昇された状況を示している。
In FIG. 4, when the charge amount is measured, that is, the switch 11 is disconnected from the high-frequency power source 5 and connected to the charge amount measuring device 6 for each of the divided electrodes, and the substrate 4 is raised by the lifting pins 8. Indicates the situation.

【0064】多数の測定器を接続するにはコストが増大
するため、各区分の測定を高速の時分割で行なう方法で
もよい。
Since connecting a large number of measuring instruments increases the cost, a method of performing high-speed time division measurement of each section may be used.

【0065】図5に、その実施例を示す。図5では、プ
ラズマ処理と帯電量測定を切替えるためのスイッチ12
と、帯電量測定時に区分電極の1つを選択するための時
分割のスイッチ13を追加している。
FIG. 5 shows an embodiment thereof. FIG. 5 shows a switch 12 for switching between plasma processing and charge amount measurement.
And a time-division switch 13 for selecting one of the divided electrodes when measuring the charge amount.

【0066】図5は、帯電量測定時、すなわち、スイッ
チ12は高周波電源5から切り離されて帯電量測定器6
側に接続しているため帯電量測定器6が対向電極2の分
割区域のどれか一つのみと接続されている状況を示して
いる。
FIG. 5 shows the state of the charge amount measurement, that is, the switch 12 is disconnected from the high frequency power supply 5 and the charge amount
2 shows that the charge amount measuring device 6 is connected to only one of the divided areas of the counter electrode 2 because it is connected to the side.

【0067】ここで、時分割スイッチ13は、複数の端
子に切替えができるものなら機械式でもよいし、電子式
でもよい。
Here, the time division switch 13 may be a mechanical type or an electronic type as long as it can switch to a plurality of terminals.

【0068】このように、電気的に複数に区分・細分化
した電極を用いた場合、帯電荷の基板面内分布状況を把
握することが可能となる利点がある。
As described above, the use of the electrode which is electrically divided and divided into a plurality of parts has an advantage that the distribution state of the charged charges in the substrate surface can be grasped.

【0069】また、実施例1でも述べたが、測定の精度
をさらに向上させるにはゼロ点調整を行うのがよいが、
タイミングとしては、プラズマ処理直前にスイッチ7を
高周波電源5から帯電量測定器6に切り替えて、ゼロ点
調整を行った後、すぐスイッチ7を高周波電源5に接続
し直す方法がある。
As described in the first embodiment, it is preferable to perform the zero point adjustment to further improve the measurement accuracy.
As the timing, there is a method in which the switch 7 is switched from the high frequency power supply 5 to the charge amount measuring device 6 immediately before the plasma processing, the zero point is adjusted, and then the switch 7 is immediately connected to the high frequency power supply 5 again.

【0070】[0070]

【発明の効果】本発明の液晶表示素子の製造装置および
製造方法によれば、処理する基板に悪影響を及ぼすこと
なくプラズマ処理後の基板帯電量を測定できるため、プ
ラズマ処理のプロセス条件を最適化する評価手段とし
て、また生産時における帯電破壊を防止するためのモニ
ター手段として活用することにより、不良品発生を低減
し、低廉な液晶表示装置を提供することが可能である。
According to the apparatus and method for manufacturing a liquid crystal display element of the present invention, the charge amount of the substrate after the plasma processing can be measured without adversely affecting the substrate to be processed, so that the process conditions of the plasma processing are optimized. It is possible to provide an inexpensive liquid crystal display device by reducing the occurrence of defective products by utilizing it as an evaluation means to perform evaluation and as a monitoring means for preventing charge destruction during production.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の液晶表示装置の製造装置におけるプラ
ズマ処理前、プラズマ処理中、プラズマ処理直後の状態
を示す説明図。
FIG. 1 is an explanatory diagram showing a state before, during, and immediately after plasma processing in a liquid crystal display device manufacturing apparatus of the present invention.

【図2】本発明の液晶表示装置の製造装置におけるプラ
ズマ処理完了後、スイッチを高周波電源から対向電極に
切り替えた状態を示す説明図。
FIG. 2 is an explanatory diagram showing a state in which a switch is switched from a high-frequency power supply to a counter electrode after the plasma processing is completed in the liquid crystal display device manufacturing apparatus of the present invention.

【図3】本発明の液晶表示装置の製造装置におけるプラ
ズマ処理の完了後、昇降ピンにより、基板を上昇させた
状態を示す説明図。
FIG. 3 is an explanatory view showing a state in which the substrate is lifted by lifting pins after the completion of the plasma processing in the apparatus for manufacturing a liquid crystal display device of the present invention.

【図4】本発明の液晶表示装置の製造装置において、対
向電極を電気的に複数に区分し、複数の帯電量測定器を
用いる場合の説明図。
FIG. 4 is an explanatory diagram in a case where a counter electrode is electrically divided into a plurality of units and a plurality of charge amount measuring devices are used in the apparatus for manufacturing a liquid crystal display device of the present invention.

【図5】本発明の液晶表示装置の製造装置において、対
向電極を電気的に複数に区分し、1つの帯電量測定器を
用いる場合の説明図。
FIG. 5 is an explanatory diagram in a case where a counter electrode is electrically divided into a plurality of units and one charge amount measuring device is used in the apparatus for manufacturing a liquid crystal display device of the present invention.

【符号の説明】[Explanation of symbols]

1 チャンバ 2 対向電極 3 基板保持電極 4 基板 5 高周波電源 6 帯電量測定器 7、11、12、13 スイッチ 8 基板昇降ピン 9 ガス導入配管 10 圧力調整器 DESCRIPTION OF SYMBOLS 1 Chamber 2 Counter electrode 3 Substrate holding electrode 4 Substrate 5 High frequency power supply 6 Charge amount measuring device 7, 11, 12, 13 Switch 8 Substrate elevating pin 9 Gas introduction piping 10 Pressure regulator

フロントページの続き Fターム(参考) 2G036 AA28 BA33 CA00 2H088 FA17 FA18 FA30 HA01 MA20 2H090 JB02 JC09 4K030 CA06 FA03 GA02 GA12 KA15 KA30 KA39 LA18 5F045 AA08 AF07 BB10 CA15 EH04 EH07 EH14 EM10 Continued on the front page F-term (reference) 2G036 AA28 BA33 CA00 2H088 FA17 FA18 FA30 HA01 MA20 2H090 JB02 JC09 4K030 CA06 FA03 GA02 GA12 KA15 KA30 KA39 LA18 5F045 AA08 AF07 BB10 CA15 EH04 EH07 EH14 EM10

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 真空チャンバー内に基板を載置し、移動
する電極、および、対向電極を備え、少なくとも一方の
電極に高周波電力を印加することにより生成するプラズ
マを使用する装置であって、対向電極に帯電測定器もし
くは微少電流測定器を接続するスイッチを備えた液晶表
示装置の製造装置。
1. An apparatus, comprising: a substrate mounted in a vacuum chamber; a moving electrode; and a counter electrode, wherein plasma is generated by applying high-frequency power to at least one of the electrodes. An apparatus for manufacturing a liquid crystal display device having a switch for connecting a charge measuring device or a minute current measuring device to an electrode.
【請求項2】 真空チャンバー内に基板を載置し、移動
する電極、および、対向電極を備え、少なくとも一方の
電極に高周波電力を印加することにより生成するプラズ
マを使用する装置であって、対向電極に帯電測定器もし
くは微少電流測定器を接続するスイッチを備えた液晶表
示装置の製造装置を使用し、プラズマを用いて基板に処
理を施した後、基板と対向する電極に帯電測定器もしく
は微少電流測定器を接続し、基板の表面帯電量を測定す
る液晶表示装置の製造方法。
2. An apparatus comprising: a substrate mounted in a vacuum chamber; a moving electrode; and a counter electrode, wherein plasma is generated by applying high-frequency power to at least one of the electrodes. Using a liquid crystal display device manufacturing device equipped with a switch for connecting a charge measuring device or a minute current measuring device to the electrode, applying plasma to the substrate, and then applying a charge measuring device or a minute amount to the electrode facing the substrate. A method for manufacturing a liquid crystal display device in which a current measuring device is connected and a surface charge amount of a substrate is measured.
【請求項3】 真空チャンバー内に基板を載置し、移動
する電極、および、対向電極を備え、少なくとも一方の
電極に高周波電力を印加することにより生成するプラズ
マを使用する装置であって、対向電極に帯電測定器もし
くは微少電流測定器を接続するスイッチを備えた液晶表
示装置の製造装置を使用し、プラズマを用いて基板に処
理を施した後、ピン等により基板を昇降させる際に、基
板と対向する電極に帯電測定器もしくは微少電流測定器
を接続し、基板の表面帯電量、もしくは昇降時の変位電
流を測定する液晶表示装置の製造方法。
3. An apparatus, comprising: a substrate mounted in a vacuum chamber, a moving electrode, and a counter electrode, wherein plasma is generated by applying high-frequency power to at least one of the electrodes. Using a manufacturing device for a liquid crystal display device equipped with a switch for connecting a charge measuring device or a micro-current measuring device to the electrodes, applying a process to the substrate using plasma, and then moving the substrate up and down with pins etc. A method for manufacturing a liquid crystal display device, in which a charge measuring device or a minute current measuring device is connected to an electrode opposed to the above, and a surface charge amount of the substrate or a displacement current at the time of lifting / lowering is measured.
【請求項4】 請求項1において、対向電極を電気的に
複数に区分した液晶表示装置の製造装置。
4. The manufacturing apparatus according to claim 1, wherein the opposing electrode is electrically divided into a plurality.
【請求項5】 請求項2において、対向電極を電気的に
複数に区分した製造装置を使用する液晶表示装置の製造
方法。
5. The method for manufacturing a liquid crystal display device according to claim 2, wherein a manufacturing device in which a counter electrode is electrically divided into a plurality of units is used.
【請求項6】 請求項3において、対向電極を電気的に
複数に区分した製造装置を使用する液晶表示装置の製造
方法。
6. The method according to claim 3, wherein the counter electrode is electrically divided into a plurality of units.
JP11046406A 1999-02-24 1999-02-24 Manufacturing device for liquid crystal display device and manufacture therefor Pending JP2000241787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11046406A JP2000241787A (en) 1999-02-24 1999-02-24 Manufacturing device for liquid crystal display device and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11046406A JP2000241787A (en) 1999-02-24 1999-02-24 Manufacturing device for liquid crystal display device and manufacture therefor

Publications (1)

Publication Number Publication Date
JP2000241787A true JP2000241787A (en) 2000-09-08

Family

ID=12746281

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2000241787A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004301721A (en) * 2003-03-31 2004-10-28 Sharp Corp Decision system, deciding method, decision program for realizing the deciding method, and computer-readable recording medium with program stored
WO2009131230A1 (en) * 2008-04-21 2009-10-29 オー・エイチ・ティー株式会社 Circuit inspection device and method for inspecting circuit
JP2012506531A (en) * 2008-10-21 2012-03-15 アプライド マテリアルズ インコーポレイテッド Apparatus and method for active voltage compensation
JP2017015406A (en) * 2015-06-26 2017-01-19 春日電機株式会社 Surface potential measurement device, and switch release area setting method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004301721A (en) * 2003-03-31 2004-10-28 Sharp Corp Decision system, deciding method, decision program for realizing the deciding method, and computer-readable recording medium with program stored
WO2009131230A1 (en) * 2008-04-21 2009-10-29 オー・エイチ・ティー株式会社 Circuit inspection device and method for inspecting circuit
JP5327551B2 (en) * 2008-04-21 2013-10-30 オー・エイチ・ティー株式会社 Circuit inspection apparatus and circuit inspection method thereof
JP2012506531A (en) * 2008-10-21 2012-03-15 アプライド マテリアルズ インコーポレイテッド Apparatus and method for active voltage compensation
JP2017015406A (en) * 2015-06-26 2017-01-19 春日電機株式会社 Surface potential measurement device, and switch release area setting method

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