JP2000235250A - Manufacture of photomask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently perform the correction, to shorten a time for the correction and to improve throughput in the photomask forming pattern data. SOLUTION: Operation processing and format conversion are performed for the layout data 1, and the pattern data 2 are formed. When the need for correcting the layout data 1 occurs, a different area among the layout data 3 after corrected with comparison processing 4 is extracted in stripe unit. The stripe is clipped with clip processing 5 to be made into the layout data 6 in stripe unit, and the operation processing 7 and the format conversion 8 are performed, and the pattern data 9 in stripe unit are formed. The area relevant to the layout data 6 of the pattern data 2 are replaced with the pattern data 9, and the pattern data 11 after the correction based on the pattern data 3 are formed. The pattern data 11 are supplied to an EB drawing device, and the photomask is manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a photomask, and more particularly, to a method suitable for correcting pattern data for producing a photomask used in a drawing apparatus.

[0002]

2. Description of the Related Art First, a method of producing pattern data for producing a photomask for producing a photomask from design layout data according to the prior art will be described below.

[0003] That is, in the creation of conventional photomask creation pattern data, as shown in FIG. 11, first, an arithmetic processing 1 is performed on design layout data 101 created by CAD (Computer Aided Design) or the like.
02 is performed. The operation process 102 includes a logical operation process,
Enlargement processing, reduction processing, black-and-white inversion processing, mirror inversion processing,
Processing such as scaling processing, clipping processing, and fine figure processing is included.

Next, data format conversion 103 is performed on the design layout data 101 on which the arithmetic processing 102 has been performed. Thereby, the design layout data 1
01 is converted into a format such as an electron beam drawing apparatus (EB drawing apparatus) used for drawing a photomask pattern, and pattern data 104 for forming a photomask is created.

[0005] By the way, at present, pattern data for forming a photomask has been increased due to the increase in the density of semiconductor circuits, and it has become difficult to sufficiently verify the layout. As a result, an error in circuit design is often found after a chip is formed on a semiconductor wafer. In such a case, it is necessary to correct an erroneous portion in the design layout data and to correct the photomask creation pattern data in a short time.

[0006]

However, FIG.
As shown in FIG. 7, an error in the design layout data 101 is corrected, and the corrected design layout data 111 is corrected.
Pattern data 114 for photomask creation after correction
, It is necessary to perform the arithmetic processing 112 and the data format conversion 113 on the modified design layout data 111 again. Therefore, the time required to generate the corrected photomask creation pattern data 114 from the corrected design layout data 111 is the time required to generate the photomask creation pattern data 104 from the design layout data 101 described above. It takes almost the same time. And
The time required to create the photomask creation pattern data from the design layout data is extremely long due to the recent increase in the size of the photomask creation pattern data, and the time loss increases. Is a problem.

As described above, since it takes a long time to correct the photomask forming pattern data, the turnaround time (TAT) of the correcting operation is reduced, and the throughput in generating the photomask forming pattern data is reduced. The development of technologies that can be improved is desired.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to efficiently correct photomask-forming pattern data used in the manufacture of a photomask, shorten the time required for the correction, and generate the photomask-forming pattern data. It is an object of the present invention to provide a method of manufacturing a photomask which can improve the throughput in the above.

[0009]

In order to achieve the above object, the present invention relates to a photomask manufacturing method for manufacturing a photomask on the basis of pattern data for producing a photomask. By performing arithmetic processing and format conversion on the data, pattern data for photomask creation is created, and when it becomes necessary to modify the design layout data, the format comparison between the modified design layout data and the design layout data is performed. Perform processing, extract an area of the modified design layout data that is different from the design layout data in a predetermined unit area, and perform arithmetic processing and format conversion on the extracted design layout data of the predetermined unit area. By doing so, the design layout of the extracted predetermined unit area Create a photo mask making pattern data after correction of the predetermined unit regions from Utodeta,
By replacing the area corresponding to the extracted design layout data of the predetermined unit area in the photomask creation pattern data with the corrected photomask creation pattern data of the predetermined unit area, the corrected design layout is obtained. The method is characterized in that a corrected photomask producing pattern data based on the data is produced.

In the present invention, when a different area extends over a plurality of unit areas, typically, the plurality of unit areas are divided into individual unit areas before performing arithmetic processing and format conversion.

In the present invention, when enlargement / reduction processing is performed on design layout data by arithmetic processing, typically, enlargement in the enlargement / reduction processing is performed in order to prevent chipping of a pattern due to the enlargement / reduction processing. The size of a predetermined unit area is determined based on the reduced value. More specifically, N
When performing the doubling process, the size of the predetermined unit area is reduced to 1 / N times.

In the present invention, typically, in order to prevent pattern omission in photomask making pattern data due to correction of data in a cell region having a hierarchical structure in design layout data having a hierarchical structure, Before performing arithmetic processing and format conversion,
It is determined whether a predetermined unit area having a different area includes and / or intersects a cell area having a hierarchical structure. When the predetermined unit area includes and / or intersects a cell area having a hierarchical structure, the hierarchical structure of the cell area is developed. At this time, if the cell region having the different region is not the uppermost cell region in the hierarchical structure, the cell region including the different region is expanded into the uppermost cell region, and then the predetermined region having the different region is obtained. It is determined whether the unit area includes and / or intersects a cell area having a hierarchical structure.

According to the photomask manufacturing method according to the present invention having the above-described configuration, when it is necessary to correct the design layout data, the difference between the corrected design layout data and the design layout data is obtained. The extracted area is extracted as a predetermined unit area, and arithmetic processing and format conversion are performed on the extracted design layout data of the predetermined unit area to obtain a corrected photomask creating pattern data of the predetermined unit area. After creating
By replacing the corrected photomask creation pattern data of the predetermined unit area with the corresponding area of the photomask creation pattern data, the corrected photomask creation pattern based on the corrected design layout data is replaced. By generating the pattern data, the amount of data for performing the arithmetic processing and the format conversion in the corrected design layout data can be minimized and greatly reduced.

[0014]

Embodiments of the present invention will be described below with reference to the drawings. In all the drawings of the following embodiments, the same or corresponding portions are denoted by the same reference numerals.

First, a description will be given of a method of correcting pattern data for forming a photomask according to the first embodiment of the present invention. FIG. 1 is a flowchart showing a method for correcting the photomask making pattern data according to the first embodiment. In the first embodiment, a case will be described in which pattern data for creating a photomask used in a raster scanning type drawing apparatus is corrected. The format of the drawing apparatus according to the first embodiment is as follows.
As shown in FIG. 2, a band-shaped drawing unit (hereinafter, referred to as a “stripe” in the first embodiment) is arranged in a matrix.

As shown in FIG. 1, in the method of correcting the pattern data for forming a photomask according to the first embodiment, first, an arithmetic processing and a format conversion are performed on the design layout data 1 so that the photo The mask creating pattern data 2 is created. Thereafter, if there is a design error or layout error in the photomask making pattern data 2 and it becomes necessary to make a correction, a correction process is performed on the design layout data 1.
Thus, the modified design layout data 3 is created.

Next, a format comparison process 4 is performed on the design layout data 1 before correction and the design layout data 3 after correction. As a result, of the design layout data 3 after the correction, the design layout data 1 before the correction
Are extracted as difference data.

Next, the dimensions of the stripe in the format shown in FIG. 2 are converted in accordance with the coordinate system of the modified design layout data 3. As a result, the difference data is included in any of the stripes in the format. Then, a search is made to find which stripe contains the difference data.

As a result of the search, in the first embodiment, for example, the difference data is included in a difference area 21 indicated by a hatched portion in FIG. And this difference area 21
Is composed of three stripes 21a, 21b, 21c.

FIG. 3 shows the above-mentioned different area 21. FIG. 3A
As shown in the figure, in the difference area 21 in the design layout data 3 after the correction, the design layout data 1 before the correction matches with the common part 22 shown by oblique lines, and differs in the correction part 23 shown by dots. I have. In this way, the difference data is extracted, and the stripe 2 in which the difference data exists
After the search of 1a to 21c is completed, the processing shifts to clip processing 5 shown in FIG.

In the clip processing 5, a set of stripes 21a to 21c including the difference data extracted in the format comparison processing 4 is clipped, and as shown in FIG. 3B, the individual stripes 21a, 21b,
It is divided into stripes 21c. As a result, the design layout data 6 in stripe units including the stripes 21a, 21b, and 21c including the individual difference data is obtained. At this time, information that the stripes 21a, 21b, and 21c include the correction units 23a, 23b, and 23c, respectively, and are replaced is obtained as replacement information.

Next, arithmetic processing 7 and data format conversion 8 are sequentially performed on the design layout data 6 in stripe units. As a result, the pattern data 9 for creating a photomask in stripe units corresponding to the respective stripes 21a, 21b, 21c is created.

Next, in the stripe replacement processing 10, based on the above replacement information, the stripes 21 of the pattern data 2 for photomask preparation before correction are
The areas corresponding to a, 21b, and 21c are replaced with the photomask creating pattern 9 in stripe units. As a result, the corrected photomask forming pattern data 1
1 is created.

As described above, the photomask forming pattern data is corrected, and desired photomask forming pattern data is obtained.

Then, when manufacturing a photomask,
The corrected photomask making pattern data 11 obtained as described above is supplied to, for example, an EB drawing apparatus (not shown) of a raster scanning system, and the photomask is formed using a conventionally known photomask forming technique. To manufacture.

As described above, according to the method of correcting the pattern data for preparing a photomask according to the first embodiment, the difference between the design layout data 3 before correction and the design layout data 1 before correction is different. Data is extracted in units of stripes, arithmetic processing 7 and data format conversion 8 are performed on the design layout data 6 in units of stripes, and pattern data 9 for creating photomasks in units of stripes is created. In 10, the arithmetic processing is performed by replacing the area corresponding to the design layout data 6 in stripe units in the photomask creation pattern 2 before correction with the stripe-based photomask creation pattern data 9. 7 with the corrected stripes 21a-21c It can be performed only for,
Stripe 2 of design layout data 1 before correction
It is not necessary to perform the arithmetic processing 7 requiring a long processing time on the area other than 1a to 21c. As a result, the processing time required from the post-modification design layout data 3 to the post-modification photomask production pattern data 11 can be greatly reduced. Throughput in the creation of mask creation pattern data can be improved.

Next, a description will be given of a method of correcting photomask forming pattern data according to the second embodiment of the present invention. FIG. 4 is a flowchart showing a method of modifying the photomask making pattern data according to the second embodiment. In the second embodiment, a case will be described in which pattern data for creating a photomask used in a vector scanning type drawing apparatus is corrected. The format of the drawing apparatus according to the second embodiment is as follows.
A band-like drawing unit (hereinafter, referred to as a "field" in the second embodiment) similar to that in the first embodiment is arranged in a matrix.

As shown in FIG. 4, in the method of correcting the pattern data for preparing a photomask according to the second embodiment, first, an arithmetic processing and a format conversion are performed on the design layout data 31 so that the photo The mask creating pattern data 32 is created. After that, if there is a design error or layout error in the photomask creation pattern data 32 and it becomes necessary to make a correction, a correction process is performed on the design layout data 31. As a result, the modified design layout data 33 is created.

Next, the design layout data 31 before correction
A format comparison process 34 is performed between the modified layout data 33 and the modified design layout data 33. Thereby, a part different from the design layout data 31 before the correction is extracted as the difference data from the design layout data 33 after the correction.

Next, the dimensions of the format field are converted according to the coordinate system of the modified design layout data 33 and the like. As a result, the difference data is included in any of the fields in the format. Then, a search is made to find in which field the difference data is included.

After searching for an area including the difference data, the process proceeds to clip processing 35. In the clipping process 35, as in the first embodiment, after clipping an area of the modified design layout data 33 that is different from the unmodified design layout data 31 on a field-by-field basis, Divided into Thereby, the design layout data 36 for each field including the difference data is obtained.

Next, the operation processing 37 and the data format conversion 38 are sequentially performed on the design layout data 36 for each field. As a result, the pattern data 39 for creating a photomask in units of fields is created.

Next, in the field replacement processing 40, an area corresponding to a field including difference data in the photomask creation pattern data 32 before correction is set to
The pattern 39 is replaced with a photomask creation pattern 39 in field units. As a result, the corrected photomask creating pattern data 41 is created.

As described above, the photomask forming pattern data is corrected, and desired photomask forming pattern data can be obtained.

Thereafter, when manufacturing a photomask,
The corrected photomask forming pattern data 41 obtained as described above is supplied to, for example, an EB drawing apparatus (not shown) of a vector scanning system, and the photomask is formed using a conventionally known photomask forming technique. To manufacture.

As described above, according to the method of correcting the photomask creating pattern data according to the second embodiment, the data of the modified design layout data 33 which is different from the unmodified design layout data 31 is used. Is extracted in the unit of a field, the arithmetic processing 37 and the data format conversion 38 are performed only on the design layout data 36 in the unit of the field, and the pattern data 39 for creating a photomask in the unit of a field is created. As in the first embodiment, the area corresponding to the field-based design layout data 36 in the photomask creation pattern 32 before correction is replaced with the field-based photomask creation pattern data 39. The effect of can be obtained.

By the way, in the method of correcting the pattern data for forming a photomask according to the first embodiment, the difference data 50 as shown in FIG. When the enlargement processing is performed by the arithmetic processing 6, if the size of the stripe (strip size) and the size of the clip area (clip size) are the same, the following inconvenience occurs.

That is, when the difference data 50 exists in the area of the clip area 51, replacement information for replacing a stripe corresponding to the clip area 51 is obtained as replacement information in this case. However, FIG. 5B
As shown in FIG. 7, when the clip size and the stripe size are the same size and the arithmetic processing includes, for example, double enlargement processing, the difference data 52 in the photomask creation pattern data is
Will protrude.

Thereafter, when the format conversion is performed on the stripe 53, the format conversion is performed on a stripe-by-stripe basis, so that a stripe 54 in the pattern data for forming a photomask as shown in FIG. 5C is obtained. Then, based on the replacement information described above, when the corresponding stripe in the photomask creation pattern data before correction is replaced with a stripe 54, the difference data 55 out of the difference data 55 in the photomask creation pattern data 55a is not replaced, a pattern is missing, and a desired correction result cannot be obtained.

Therefore, in the following third embodiment, a method will be described in which a desired correction result can be obtained even when the arithmetic processing includes an enlarging processing.

That is, in the method of correcting the photomask forming pattern data according to the third embodiment of the present invention, first, similarly to the first embodiment, the photomask forming pattern data 2 is converted from the design layout data 1.
Is created, the difference data is extracted by performing a format comparison process 4 on the design layout data 1 before correction and the design layout data 3 after correction.

Next, a search is performed to determine which stripe contains the difference data. As a result of this search, in the third embodiment, for example, the difference data 60 is included in the stripe 61 as shown in FIG. 6A.

Next, the clip size is reduced by the magnification of the enlargement processing based on the magnification of the enlargement processing in the arithmetic processing 7 performed later. That is, when the design layout data is enlarged N times in the arithmetic processing 7, the clip size is reduced to 1 / N times. In the third embodiment, N = 2.

Next, in the modified design layout data 3, the clip size is reduced to half the stripe size. As a result, as shown in FIG. 6B, the difference data 60 is stored in each of the clip areas 61a and 61b.
a and 60b. After that, in the clip processing 5, the clip areas 61a and 61b are clipped. At this time, the clip areas 61a and 61b
The information that includes a and 60b and is to be replaced is obtained as replacement information in the stripe after the arithmetic processing 7 and the data format conversion 8 are performed. This makes it possible to predict the positional relationship between the difference data 60 and the stripe to be replaced.

Next, as shown in FIG. 6C, an arithmetic processing 7 including double enlargement processing and a data format conversion 8 are sequentially performed on each of the clip areas 61a and 61b, so that the clip areas 61a and 61b are enlarged to a stripe size. In addition, pattern data 9 for creating a photomask in stripe units is obtained. The pattern data 9 for creating a photomask in stripe units includes difference data 62 composed of stripes 63a and 63b and corresponding to the difference data 60.

Next, as in the first embodiment, FIG.
In the stripe replacement process 10 shown in FIG. 7, the clip regions 61a and 61b of the design layout data 3 after correction among the photomask creation pattern data 2 before correction.
Is replaced with stripes 63a and 63b. As a result, the desired corrected photomask forming pattern data 11 is obtained.

Thereafter, when manufacturing a photomask,
The corrected photomask creating pattern data 11 obtained as described above is supplied to, for example, a raster scanning EB lithography apparatus (not shown), and the photomask is formed using a conventionally known photomask forming technique. To manufacture.

As described above, according to the third embodiment, the same effect as that of the first embodiment can be obtained, and the clip size is reduced by the enlargement magnification in the enlargement processing of the arithmetic processing 7. Due to the reduction, the pattern data for creating a photomask can be corrected without causing a problem such as lack of a pattern.

Now, in the method of correcting the pattern data for forming a photomask in the first embodiment described above,
When the design layout data has a hierarchical structure, there are the following inconveniences.

First, a case where the design layout data does not have a hierarchical structure will be described for comparison. That is, as shown in FIG. 7A, the design layout data does not have a hierarchical structure, and the first cell 71
a, 71b, and 71c, for example, when a part of the pattern 71a is corrected, when a format comparison process is performed between the design layout data before the correction and the design layout data after the design, the pattern 71a Are extracted (not shown). And
When the stripe 72 including the pattern 71a is clipped, the first cells 71 included in the stripe 72 are clipped, and together with the pattern 71a, the patterns 71b,
1c is also clipped. Thereafter, the same processing as in the first embodiment is performed on the clipped stripe 72, so that desired photomask forming pattern data is obtained.

On the other hand, as shown in FIG. 7B, when the design layout data has a hierarchical structure and the first cell 71 has the second cell 73, that is, the first cell 71 has the patterns 71b and 71c. In the case where the second cell 73 including the above is cited, when this hierarchical structure is viewed from the first cell 71, it can be viewed as a layout similar to that shown in FIG. 7A. However, for example, a part of the pattern 71a is corrected, a format comparison process is performed between the design layout data before the correction and the design layout data after the correction, and the difference data included in the pattern 71a is extracted. Is clipped, the clipped stripe 72 has a pattern 71a
Only, and the patterns 71b and 71c are not included. Therefore, when the arithmetic processing and the data format conversion are sequentially performed on the stripe of the modified design layout data, as shown in FIG.
4 shows a pattern 71 of the design layout data after modification.
a, only the pattern 74a corresponding to the
The pattern of the photomask creation pattern data corresponding to 1b and 71c is missing. As a result, pattern omissions occur in the photomask making pattern data, and a desired correction result cannot be obtained.

Therefore, in the following fourth embodiment, a description will be given of a method of correcting photomask-forming pattern data that can obtain a desired correction result even when the design layout data has a hierarchical structure.

That is, in the method of correcting the pattern data for forming a photomask according to the fourth embodiment of the present invention, first, as shown in FIG. After creating the photomask creating pattern data 2, the correction portion of the design layout data 1 is corrected.

Next, a format comparison process 4 is performed between the design layout data 1 before modification and the design layout data 3 after modification. As a result, the difference data from the design layout data 1 before the correction is extracted from the design layout data 3 after the correction. At this time, as shown in FIG. 9A, for example, difference data (not shown)
Is assumed to be included in the pattern 92b.

Next, it is determined whether or not the pattern 92b including the extracted difference data is cited in another cell. In the fourth embodiment, the stripe 91 extracted from the design layout data includes the pattern 92a while the first cell 92 as the top cell refers to the second cell 93, as shown in FIG. 9B. As shown in FIG. 9C, the second cell 93 includes the pattern 92b while referring to the third cell 94, and as shown in FIG.
Cell 94 includes a pattern 92c. When viewed from the first cell 92, the layout is as shown in FIG. 9A.

In the above-described hierarchical structure, since the pattern 92b including the difference data is quoted in the first cell 92, the second cell 93 is expanded into the first cell 92 as a top cell. . Thereby, the first cell 9
9 is a top cell including the patterns 92a and 92b while referring to the third cell 94, as shown in FIG. 9E.

Next, as shown in FIG. 8, whether or not a cell region having a hierarchical structure includes and / or intersects with the stripe including the extracted difference data is determined. An intersection determination 81 is performed. as a result,
When the cell region having the stacked structure does not include / intersect, that is, as shown in FIG. 9A, the first cell 92 included in the stripe 91 does not have the hierarchical structure and the first cell When the pattern 92 includes all of the patterns 92a to 92c, the processing shifts to the clip processing 5.

On the other hand, as a result of the inclusion / intersection judgment 81 of the cell area, if the cell area having the laminated structure is included / intersected, that is, as shown in FIG. If the third cell 94 cites the third cell 94 and the third cell 94 is included / intersected by the stripe, the process proceeds to the cell development processing 82 shown in FIG. Then, the third cell 94 including the pattern 92c shown in FIG. 9D is developed into the first cell 92. As a result, the third cell 94 included / intersected by the stripe 91 is expanded into the first cell 92 of the top cell, and FIG. 9A
Is the same as the stripe 91 shown in FIG. Thereafter, the process proceeds to clip processing 5.

In the clipping process 5, stripes containing difference data and having no hierarchical structure are clipped to create design layout data 6 in stripe units. Other points are the same as in the first embodiment, and a description thereof will be omitted.

Next, another example of the fourth embodiment will be described with reference to FIG. In this example, the stripe 95 extracted in the format comparison processing 4 has difference data included in the pattern 96a and has the layout shown in FIG. 10A when viewed from the top cell. The hierarchical structure is shown in FIG. 10B and FIG.
0C, the first cell 96 as a top cell
Includes the pattern 96a while quoting the second cell 97,
The second cell 97 includes the patterns 96b, 96c.

In the above-described hierarchical structure, since the pattern 96a including the difference data is included in the first cell 96 as the top cell, the flow proceeds to the inclusion / intersection determination 81 of the cell area shown in FIG. . And the pattern 96a
Has a hierarchical structure, so that in the cell expansion process 82, the second cell 97
Is expanded to a cell 96 of As a result, as shown in FIG. 10D, patterns 96a, 96b,
96c is included, and there is no hierarchical structure. Thereafter, the process proceeds to clip processing 5.

Thereafter, as in the first embodiment,
As shown in FIG. 8, design layout data 6 in stripe units is created, and arithmetic processing 7 and format conversion 8 are performed.
Are sequentially performed to create pattern data 9 for creating a photomask in stripe units, and then a stripe replacement process 10 is performed to create the corrected pattern data 11 for creating a photomask.

As described above, according to the method of correcting pattern data for forming a photomask according to the fourth embodiment, the same effect as that of the first embodiment can be obtained, and the stripe including the difference data can be obtained. Since the cell region having a hierarchical structure in which is included and / or intersected is expanded to the top cell and then the stripe is clipped, a problem such as a missing pattern in the corrected photomask creation pattern data is caused. The pattern data for creating a photomask can be corrected without the occurrence of the above.

Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications based on the technical idea of the present invention are possible.

For example, the numerical values given in the above embodiments are merely examples, and different numerical values may be used as needed.

For example, in the above-described third embodiment, the case has been described where the double enlargement processing (N = 2) is performed by the arithmetic processing 7, but the present invention is applied to all values of N> 0. It is possible. That is, also in the case where the arithmetic processing 7 includes the reduction processing,
The clip size can be enlarged by the reduction magnification based on the reduction magnification.

[0067]

As described above, according to the present invention, when it is necessary to modify the design layout data, an area of the modified design layout data which is different from the design layout data is determined. After extracting in the unit area, performing arithmetic processing and format conversion on the extracted design layout data of the predetermined unit area, and creating corrected photomask creation pattern data of the predetermined unit area, By replacing the corrected photomask creation pattern data of the predetermined unit area with the corresponding area of the photomask creation pattern data, the corrected photomask creation pattern based on the corrected design layout data is replaced. Modifying pattern data for creating photomasks by creating pattern data Performed efficiently, it is possible to shorten the time required for the modification, it is possible to improve throughput in the creation of the pattern data creating photomask.

[Brief description of the drawings]

FIG. 1 is a flowchart showing a method of correcting photomask making pattern data according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram illustrating a format of pattern data for forming a photomask according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram illustrating a stripe including difference data according to the first embodiment of the present invention.

FIG. 4 is a flowchart illustrating a method of correcting pattern data for forming a photomask according to a second embodiment of the present invention.

FIG. 5 is a schematic diagram for explaining a problem to be solved in a third embodiment of the present invention.

FIG. 6 is a schematic diagram for explaining a method of correcting photomask making pattern data according to a third embodiment of the present invention.

FIG. 7 is a schematic diagram for explaining a problem to be solved in a fourth embodiment of the present invention.

FIG. 8 is a flowchart showing a method of correcting photomask making pattern data according to a fourth embodiment of the present invention.

FIG. 9 is a schematic diagram illustrating a hierarchical structure of a cell according to a fourth embodiment of the present invention.

FIG. 10 is a schematic diagram illustrating an example of another hierarchical structure of a cell according to the fourth embodiment of the present invention.

FIG. 11 is a flowchart illustrating a method for creating pattern data for creating a photomask according to the related art.

FIG. 12 is a flowchart illustrating a method for creating pattern data for creating a photomask according to the related art.

[Explanation of symbols]

1, 31,... Design layout data, 2, 32,.
Photomask creation pattern data, 3, 33... Corrected design layout data, 5, 35... Clip processing, 9... Stripe-unit photomask creation pattern data, 10. , 1
1, 41: pattern data for photomask creation after correction, 39: pattern data for photomask creation in field units, 40: field replacement processing

Claims (7)

[Claims] 1. A photomask manufacturing method for manufacturing a photomask based on photomask-forming pattern data, comprising: performing arithmetic processing and format conversion on design layout data; When it is necessary to modify the design layout data after creating the pattern data, a format comparison process is performed between the modified design layout data and the design layout data, and the An area different from the design layout data is extracted in a predetermined unit area, and the arithmetic processing and the format conversion are performed on the extracted design layout data of the predetermined unit area, whereby the extracted Is it the design layout data of the specified unit area A corrected photomask creating pattern data of a predetermined unit area is created, and, of the photomask creating pattern data, an area corresponding to the extracted design layout data of the predetermined unit area is written in the predetermined unit area. The modified photomask creation pattern data based on the modified design layout data is created by replacing the unit area with the modified photomask creation pattern data. Production method. 2. The method according to claim 1, wherein when the different area extends over a plurality of unit areas, the plurality of unit areas are divided into individual unit areas before performing the arithmetic processing and the format conversion. The method for manufacturing a photomask according to claim 1, wherein: 3. When enlarging / reducing processing is performed on the design layout data by the arithmetic processing, the enlarging / reducing processing is performed.
2. The method according to claim 1, wherein the size of the predetermined unit area is determined based on an enlargement / reduction value in the reduction processing. 4. The method according to claim 1, wherein when performing the N-times processing on the design layout data by the arithmetic processing, the size of the predetermined unit area is reduced to 1 / N times.
The manufacturing method of the photomask described in the above. 5. A method for determining whether the predetermined unit area having the different area includes and / or intersects a cell area having a hierarchical structure before performing the arithmetic processing and the format conversion. The method for manufacturing a photomask according to claim 1, wherein: 6. When the predetermined unit area includes and / or intersects a cell area having the hierarchical structure,
6. The method according to claim 5, wherein the hierarchical structure of the cell region is developed. 7. If the cell region having the different region is not the uppermost cell region in the hierarchical structure, after expanding the cell region including the different region into the uppermost cell region, The method according to claim 5, wherein the determination is performed.