JP2000228370A - Substrate-heating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-heating apparatus, capable of preventing the external atmosphere from being involved into a process chamber at a supply amount of an appropriate purge gas at carrying substrates in. SOLUTION: A flow F1 of a purge gas, to be supplied from a purge gas supply pipe 52b to a nozzle 10, abuts on a flow adjusting plate 14A (projection part) within a flow adjusting route 12 and is diffused to a flow in an X-direction and a flow in a Z-direction. The same operation of the purge gas as described is repeated with respect to the flow adjusting plates 14B, 14C positioned in a downstream in the flow adjusting route 12, and spacial uniformity in a flow speed thereof at a gas outflow port 9 of an exit of the nozzle 10 is increased. This purge gas flows into the processing chamber, and attains a flow with high uniformity at a carry-in port of a substrate W provided at a position confronting a gas inlet port 9, and flows outwardly of the substrate heating apparatus. As the result, at carrying of the substrate in, it is possible to prevent the external atmosphere from being involved into the process chamber at the supply amount of an appropriate purging gas.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate such as a semiconductor substrate, a glass substrate for a liquid crystal display, a glass substrate for a photomask, and a substrate for an optical disk (hereinafter simply referred to as "substrate").
The present invention relates to a substrate heat treatment apparatus for performing heat treatment on a substrate by light irradiation or the like.

[0002]

2. Description of the Related Art In a substrate heat treatment apparatus, if an atmosphere outside the apparatus (hereinafter referred to as "outside air") enters a chamber, the heat treatment of the substrate may be adversely affected. Generally, the outside air enters the chamber when the substrate is carried into the substrate heat treatment apparatus when the substrate is moved into and out of the apparatus with the movement of the substrate. Therefore, at the time of carrying in the substrate, a purge gas (inert gas: mainly nitrogen) is supplied into the chamber to form a flow of the purge gas toward the carry-in / out port in order to suppress the entrainment of the outside air. Specifically, after the purge gas supplied to the apparatus is diffused in the width direction of the chamber, the purge gas is introduced into the chamber through a plurality of small holes provided on the upper and lower wall surfaces of the chamber located on the opposite side to the carry-in / out port, and the carry-out is performed. It is discharged from the inlet to the outside of the chamber.

[0003]

However, when the purge gas is introduced into the chamber, the purge gas is introduced through a plurality of small holes as described above. The flow does not become continuous. In addition, since the purge gas is introduced from the upper and lower wall surfaces of the chamber perpendicularly to the substrate loading direction, the upward and downward flows of the purge gas merge in the chamber, but the direction of the combined flow is necessarily toward the loading / unloading port. Not necessarily. As a result, the flow of the purge gas in the chamber does not become uniform toward the loading / unloading port, and the flow velocity distribution is different between the vicinity of the center of the loading / unloading port and the vicinity of the wall surface.
A method may be considered in which the supply pressure of the purge gas is further increased to increase the flow rate of the purge gas in the chamber relatively to suppress the entrainment of the outside air, but equipment for this purpose is required to increase the supply pressure. Thus, there is a limit to the pressure increase, and the supply amount of the purge gas also increases.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a substrate heat treatment apparatus which can prevent outside air from being trapped in a processing chamber with a proper gas supply amount when carrying a substrate. And

[0005]

According to a first aspect of the present invention, there is provided a substrate heat treatment apparatus for performing a heat treatment on a substrate, comprising: a treatment chamber for accommodating a substrate; Heating means for heating the substrate, a loading / unloading port provided on a side portion of the processing chamber for loading / unloading the substrate into / from the processing chamber, and loading / unloading the substrate from the loading / unloading port into the processing chamber. A nozzle for supplying gas into the processing chamber, wherein the nozzle is provided with a gas inlet provided at a position facing the carry-in / out port, and a rectifying path for rectifying gas guided to the gas inlet. Buffer means for improving the uniformity of the gas flow by buffering the flow by the rectification path, wherein the direction of the flow of the gas introduced from the gas introduction port is a substrate accommodated in the processing chamber. The direction approximately parallel to the main surface of It is.

According to a second aspect of the present invention, in the substrate heat treatment apparatus according to the first aspect of the present invention, the substrate has a first main surface on which an electronic device is to be formed and a back surface corresponding to the first main surface. The gas inlet is provided in the processing chamber so as to be biased toward the first main surface of the substrate.

According to a third aspect of the present invention, in the substrate heat treatment apparatus according to the first or second aspect, the rectifying path is configured to diffuse the flow of the purge gas in the direction of the opening surface of the gas outlet. It has road characteristics.

According to a fourth aspect of the present invention, in the substrate heat treatment apparatus according to any one of the first to third aspects, the buffer means protrudes into the rectification path, and gas is supplied to the rectification path. At least one protrusion that extends in a strip shape in a direction substantially perpendicular to the inflow direction and diffuses the gas is provided.

According to a fifth aspect of the present invention, in the substrate heat treatment apparatus according to the fourth aspect of the present invention, the protrusion has notches at both ends thereof.

According to a sixth aspect of the present invention, in the substrate heat treatment apparatus according to any one of the first to fifth aspects, the substrate is a substantially circular substrate, and the gas inlet is formed in an outer peripheral circle of the substrate. It is opened in an arc shape that is almost concentric.

According to a seventh aspect of the present invention, in the substrate heat treatment apparatus according to any one of the first to sixth aspects, the opening area of the carry-in / out port is about 12 times the opening area of the gas introduction port. Within.

[0012]

FIG. 1 is a longitudinal sectional view showing a substrate heat treatment apparatus 1 according to an embodiment of the present invention. Note that, in FIG. 1 and each of the following drawings, an XYZ orthogonal coordinate system is appropriately attached to clarify the directional relationship.

The substrate heat treatment apparatus 1 of the present embodiment comprises a substrate W
And a lamp 31 for irradiating light for heating the substrate W.

The chamber 2 is provided with a quartz window 2 covering the upper part of the substrate W in a container body 21 covering the lower part and the side periphery of the substrate W.
2 is attached. The quartz window 22 is positioned between the substrate W placed in the chamber 2 and the lamp 31 and serves as a window for transmitting light from the lamp 31. The container body 21 has a carry-in / out entrance 20 for carrying in / out the substrate W, and a door 23 is provided at the carry-in / out entrance 20 so as to be openable and closable.

A cooling water passage 211 is provided inside the container main body 21 so as not to be heated by the light from the lamp 31.
Is formed, and the chamber 2 of the container main body 21 is formed.
The portion facing the inside is processed so that light can be reflected and the substrate W can be efficiently heated, and the substrate W
Is formed with a reflection surface 21E so that the radiation light from the substrate W can be efficiently reflected.

The lamp 31 is provided such that a plurality of rod-shaped lamps are covered by a lid 61 outside the chamber 2. The lid portion 61 has a cooling water channel 611 formed in the same manner as the container body portion 21, and further has a mirror surface so that the substrate W can be efficiently heated by reflecting light from the lamp 31 and efficiently heating the substrate W. Has been processed.

Next, a configuration in which the substrate W is rotated while supporting the substrate W inside the chamber 2 will be described.

The susceptor 40 is configured to compensate for the temperature of the substrate W during the heat treatment and to support a temperature compensation ring 41 for supporting the peripheral portion of the substrate W on a support column 42. In addition, the susceptor 40 is configured to perform a rotational motion about the central axis 21C of the substrate W together with the substrate W being supported by being driven by the rotation drive unit 72.

The rotation drive unit 72 is provided at the lower part of the container body 21 and is fixed to the support column 42 and is provided with a magnet 721 disposed in the chamber 2, a magnet 722 disposed outside the chamber 2, and these magnets. 721 and 722 are each axis 2
It has bearings 723 and 724 that guide around 1C, and a motor 725 that serves as a drive source for the movement of the magnet 722 outside the chamber 2. Also, the magnet 721 and the magnet 72
A plurality of bearings 723 and 724 are arranged on the circumference around the shaft 21C in pairs so as to sandwich a part of the container body 21 from inside and outside of the chamber 2. It has a circular shape.

When the motor 725 is driven, the magnet 722 rotates about the shaft 21C, and the magnetic coupling between the magnet 722 and the magnet 721 in the chamber 2 causes the susceptor 40 to rotate.
In addition, the rotation of the substrate W can contribute to the uniformization of the temperature distribution of the substrate W when the substrate W is subjected to a process involving heating.

In the lower part of the container body 21, three lift portions 8 for raising and lowering the substrate W are provided (the other two are omitted in FIG. 1), and a radiation thermometer 6 for measuring the temperature of the substrate W is provided. ing. The lift part 8 has a lift pin 8 that moves up and down.
1 inside.

Further, a gas supply means 5 for supplying a purge gas into the chamber 2 when the substrate W is carried into the chamber 2 and a nozzle 10 connected to the gas supply means 5 and functioning as a gas buffer means are provided. . Chamber 2
The gas inlet 9 for introducing gas into the inside corresponds to the outlet of the nozzle 10. The gas inlet 9 is connected to the chamber 2
Inside, is provided at a position facing the carry-in / out entrance 20. The gas supply means 5 includes a cylinder 51 for storing the purge gas and a pipe 52 for guiding the purge gas to the nozzle 10.
a, 52b, and a valve 53 that closes during the heat treatment of the substrate, opens when the substrate is loaded, and supplies a purge gas to the nozzle 10. A purge gas pressure increasing pump may be provided in the middle of the pipe 52a. In addition, it is not essential to provide the above-mentioned cylinder 51 for each substrate processing apparatus, and a purge gas may be introduced from a common pipe shared by a plurality of substrate heat processing apparatuses of the same type.

<Details of Configuration of Nozzle 10> FIG.
FIG. 2 is a cross-sectional view as viewed from the II-II position. FIG. 3 is a sectional view of FIG.
FIG. 3 is an enlarged cross-sectional view of the nozzle 10 viewed from a position I-III. FIG. 4 is a cross-sectional view as viewed from a position IV-IV in FIG.

The nozzle 10 is connected to the container body 2 as shown in FIG.
The casing 21N integrated with the casing 1 has an outer frame, and has a nozzle body 11 therein. The internal space formed by the casing 21N and the nozzle body 11 functions as a purge gas rectification path 12. Also, nozzle 1
Numeral 0 has two circular gas inlets 13 (FIG. 3) for guiding the purge gas from the gas supply means 5, an array of protrusions 14 for rectifying and diffusing the purge gas, and a nozzle outlet 15 for forming the gas inlet 9. ing. Two gas inlets 13
Has a cross section smaller than the gas inlet 9. The gas inlet 9 has a shape that opens on an arc that is concentric with the outer circumference of the substrate W held during the heat treatment (see FIG. 2).

The projection arrangement 14 includes three strip-shaped straightening plates 14A and 14B as individual gas diffusion projections, and a wider straightening plate 14C. The three rectifying plates 14A, 14B, and 14C are installed so that their main surfaces (vertical wall surfaces) are parallel to each other, and the directions of the main surfaces extend perpendicular to the flow of the purge gas supplied from the gas inlet 13. ing. FIG. 4 is a cross-sectional view in the main surface direction of the current plate 14C. The cross section of the purge gas passage 12 in FIG. 4 is a portion surrounded by the casing 21N and the current plate 14C. In addition, three rectifying plates 14A, 14B, 14C
Are arranged so as to alternately protrude into the flow straightening path 12 from directions facing each other. That is, as shown in FIG. 3, the rectifying path 12 forms a zigzag path by these three rectifying plates.

As shown in FIG. 3, the nozzle outlet 1
5 is a straight flow path 12S for directing the flow of gas rectified by the projection array 14 toward the carry-in / out entrance 20.
have. As shown in FIG. 3, when the substrate W is supported by the temperature compensation ring 41 in the chamber 2, a straight flow path is formed on the extension surface of the upper main surface W 1 of the substrate W on which the electronic device is to be formed. The nozzle outlet 15 is preferably arranged so that the lowermost surface 12B of 12S is present. With this arrangement, a flow of the purge gas parallel to the main surface of the substrate W and biased toward the upper main surface W1 of the substrate W on which the electronic device is to be formed can be formed. For the lower main surface W2 (rear surface of the substrate W), which has a relatively low importance, the flow of the purge gas generated indirectly is sufficient, and thus the consumption of the purge gas can be particularly effectively reduced. However, it is not prohibited that the lowermost surface 12B is provided below the upper main surface W1 of the substrate W to uniformly supply the upper and lower main surfaces of the substrate W with the purge gas.

<Operation of Substrate Heat Treatment Apparatus 1> The operation of the substrate heat treatment apparatus 1 having such a configuration is as follows.

When the unprocessed substrate W held by the robot hand 91 shown in FIG. 1 is carried into the substrate heat treatment apparatus 1, the valve 53 of the gas supply means 5 is opened, and the purge gas passes through the nozzle 10. It is introduced into the chamber 2 from the inlet 9. At this time, as described later, a uniform gas flow is formed at the carry-in / out entrance 20, so that the outside air is prevented from getting into the chamber 2.

Then, the lift pins 81 which are waiting to be lifted
The substrate W is placed on the substrate. Next, after retracting the robot hand 91 to the outside of the chamber 2, the door 23 is closed and the valve 53 is closed, and the supply of the purge gas to the chamber 2 is completed. Next, the substrate W is placed on the temperature compensation ring 41 by lowering the lift pins 81.

Thereafter, the rotation drive section 72 is activated to rotate the substrate W, and the substrate W is heated by irradiation with light from the lamp 31. The unloading operation of the substrate W after the completion of the heating process is the reverse of the above-described loading operation.

Next, the flow of gas from the gas supply means 5 to the carry-in / out section 20 will be described with reference to FIGS. 2, 3, 5 and 6 regarding the rectifying action of the purge gas at the carry-in / out port 20 by the nozzle 10. I will explain later.

First, since the pressure of the purge gas supplied by the gas supply means 5 is higher than the internal pressure of the nozzle 10, the purge gas is supplied from the pipe 52b to the nozzle 10 as shown in FIG.
, A flow F1 in the Y direction is formed. Flow F1
Is the diffusion surface 1 of the current plate 14A which is perpendicular to the flow direction.
4Aa, and is divided into a flow F2 in the X direction (FIG. 2) and a flow F3 in the Z direction (FIG. 3). Then, the flow F3 in the Z direction hits the inner wall surface 11a (FIG. 3) of the nozzle body 11, and is changed to the flow F4 in the Y direction. Thereafter, the purge gas in the flow straightening path 12 inside the nozzle 10 is supplied to the flow straightening plate 1.
4B, the same buffering operation is repeated in the rectifying plate 14C, and the uniformity of the flow velocity of the purge gas on the XZ plane of the nozzle 10 is improved.

Then, the purge gas having the improved uniformity of the flow velocity passes through the straight passage 12S, becomes a flow F5 having directivity to the carry-in / out port 20, and flows into the chamber 2 from the gas inlet 9.

Hereinafter, the flow of the purge gas in the chamber 2 will be described.

FIG. 5 is a diagram schematically showing a simulation of a flow distribution of the purge gas in the YZ direction in the chamber 2. However, the straight line S1 in FIG. 5 corresponds to the lowermost surface 12B of the straight passage 12S. FIG.
FIG. 3 is a view schematically showing a simulation of a flow distribution of the purge gas in the XY direction inside the chamber 2. However, since the chamber 2 is mirror symmetric in the X direction, one half is not shown in FIG.

In FIG. 5, the flow F5 of the purge gas introduced from the gas introduction port 9 is introduced into the chamber 2 and then spreads in the Z-direction, but flows in the chamber 2 substantially in parallel. 2 Uniformly flowing out.

In FIG. 6, the flow F5 of the purge gas introduced from the gas inlet 9 is deflected in the direction of the center line 2C of the chamber 2 under the influence of the vortex H generated inside the chamber 2. It is flowing toward.
Then, at the carry-in / out entrance 20, the flow is uniform and flows out of the chamber 2.

Referring to FIGS. 5 and 6, at the carry-in / out port 20, the flow rate of the purge gas is not biased, and no outside air is involved. That is, it can be seen that the uniformization of the flow of the purge gas at the gas inlet 9 by the nozzle 10 can prevent the entrainment of outside air.

Here, looking at the flow velocity distribution of the purge gas in FIG. 6, the flow FW near the wall surface is slower than the others due to the influence of the wall surface 21W of the casing 21N. For this reason, as shown in FIG.
4d is preferably provided to reduce the flow path resistance near the wall surface 21W to improve the flow velocity.

FIG. 8 is a diagram showing a qualitative distribution of the gas flow velocity in the X direction at the inlet 12T of the straight passage 12S (see FIG. 3). FIG. 9 is a diagram showing a qualitative distribution of the gas flow velocity in the X direction at the gas inlet 9. 8 and 9, the horizontal axis represents the distance in the X direction from the chamber center line 2C, and the vertical axis represents the flow velocity v of the purge gas.
Note that Xw on the X axis corresponds to the wall surface 21W, and the gas flow velocity becomes 0 at Xw.

The three curves in FIG.
3 shows a flow velocity distribution curve 17A in the case where there is no notch, a flow velocity distribution curve 17B in the case of a small notch, and a flow velocity distribution curve 17C in the case of a large notch. Note that the notch being large means that the width D of the notch from the wall surface (see FIG. 7) is large. Referring to FIG. 8, three curves differ in the vicinity of X = Xw. That is, curves 17B and 1
7C has convex portions 17b and 17c near X = Xw, whereas curve 17A does not have any convex portions.
In addition, it can be seen that the convex portion 17c forms a convex portion in a wider portion in the X direction than the convex portion 17b. The protrusions appear in this manner because the inlet 12T is immediately after the current plate 14C, and the notch significantly reduces the flow path resistance.

As in the case of FIG. 8, the three curves in FIG. 9 show a flow velocity distribution curve 18A when the current plate 14C has no notch, a flow velocity distribution curve 18B when it has a small notch, and a flow velocity distribution curve 18 when it has a large notch. The distribution curve 18C is shown. 9, it can be seen that the uniformity of the flow rate of the purge gas in the X direction is enhanced in the order of the curves 18A, 18B, and 18C, that is, as the notch is larger. This is because, when the purge gas flow rate near the wall surface at the inlet 12T of the straight flow passage is increased in advance by the effect of the notch, the absolute velocity decreases due to the effect of the wall surface when passing through the flow passage 12S. However, this is because the relative speed with respect to the flow velocity other than the vicinity of the wall surface at the gas inlet 9 does not decrease.

Due to the effect of the above notch, the gas inlet 9
It can be seen that the uniformity of the flow rate of the purge gas in the above is improved. As a result, the uniformity of the flow rate of the purge gas that has passed through the chamber 2 at the carry-in / out port 20 is also increased, and the entrainment of outside air can be more effectively prevented.

In order to prevent the entrainment of outside air, it is effective to increase the uniformity of the flow rate of the purge gas at the carry-in / out port 20 as described above. Raising it is also effective. That is, the ratio of the opening area of the carry-in / out port 20 to the opening area of the gas inlet 9 may be reduced in relation to the opening area of the gas inlet 9. The details will be described below.

When the diameter of the substrate W is 200 mm, the opening area of the conventional loading / unloading port is 6500 mm ² , but the opening area of the substrate heat treatment apparatus 1 of this embodiment is about 2640 mm ² . The opening area of the gas inlet 9 of the device 1 is
It is about 537 mm ² .

When the ratio of the opening area of the carry-in / out port 20 to the gas inlet 9 is calculated from the above numerical data, the ratio of the opening area of the conventional device: 6500/537 = 12.
Opening area ratio of the device of the first embodiment: 2640/537 =
4.9.

As described above, the opening area ratio is 12.1 times (1
Within about 2 times), the effect of increasing the flow rate of the purge gas at the carry-in / out port 20 can be obtained. The opening area ratio is
The effect of increasing the flow rate increases as the size decreases, but the opening area ratio is preferably about 4.9 times.

<Modifications> The number of the current plates 14 is three in the above embodiment, but may be one, two, or four or more. Further, the size of the rectifying path 12 is not necessarily required to be the shape of the above-described embodiment (see FIG. 3). Specifically, the following examples are given.

FIG. 10, FIG. 11 and FIG.
0 is a sectional view. As shown in FIG.
4E and 14F may have the same width. Also,
As shown in FIG. 11, the thickness (width) of the rectifying plates 14G, 14H, 14I may be larger than the width of the rectifying path 12. Further, as shown in FIG. 12, only one current plate 14J may be used.

The nozzle 10 preferably has a shape corresponding to the shape of the casing 21N of the container body 21.

FIGS. 13 and 14 are views showing modified examples in a cross section corresponding to the position II-II in FIG. As shown in FIG. 13, when the casing 21 </ b> N extends from the inlet 10 a to the outlet 10 b of the nozzle 10, the nozzle 10 may have a convergent shape. Further, as shown in FIG. 14, when the casing 21N is stepped between the inlet 10a of the nozzle 10 and the center 21a of the container body 21, the gas is introduced before the stepped portion accordingly. It is preferable to have a shape in which the mouth 9 is arranged. In FIG. 14, the shape of the gas inlet 9 need not be open on an arc concentric with the outer circumference of the substrate W, but may be a straight line.

The shape of the carry-in / out entrance 20 (cross section as viewed from the position XV-XV in FIG. 2) is generally such that the upper wall surface 20a and the lower wall surface 20b are parallel as shown in FIG. FIG.
As shown in FIG. 6, a tapered shape in which the upper wall surface 20c is inclined with respect to the lower wall surface 20d may be used. In addition, as shown in FIG. 17, both the upper wall surface 20e and the lower wall surface 20f may have a tapered shape that is inclined.

[0053]

As described above, according to the first aspect of the present invention, the buffer means has a rectification path for rectifying a gas such as a purge gas, and the buffering of the flow by the rectification path makes the gas flow spatially. High uniformity. Further, the gas inlet is provided at a position facing the carry-in / out port in the processing chamber, and the direction of the flow of the gas introduced into the processing chamber is substantially parallel to the main surface of the substrate housed in the processing chamber. is there.

As a result, the uniformity of the flow of the gas that has passed through the processing chamber at the loading / unloading port is improved, and the entrainment of outside air can be prevented with a proper gas supply amount when the substrate is loaded.

Further, according to the second aspect of the present invention, since the gas inlet is disposed on the main surface side of the substrate on which the electronic device is to be formed, the flow of the gas introduced into the processing chamber is The substrate is smoothly guided to the loading / unloading port of the substrate, and the entrainment of outside air can be effectively prevented.

According to the third aspect of the present invention, since the rectifying path has a flow path characteristic for diffusing the gas flow in the direction of the opening of the gas inlet, the uniformity of the gas flow at the gas inlet is improved. As a result, it is possible to prevent the entrainment of outside air more effectively.

According to the fourth aspect of the present invention, since the buffer means has a projection projecting into the rectification path, extending in a band shape in a direction substantially perpendicular to the flow direction of the purge gas, and diffusing the gas, The uniformity of the gas flow at the gas inlet can be easily and reliably increased, and the entrapment of outside air can be prevented.

According to the fifth aspect of the present invention, since the projection has notches at both ends thereof, it is possible to compensate for the decrease in the gas flow velocity due to the effect of the wall surface, and to improve the uniformity of the flow velocity at the gas inlet. Can be enhanced.

According to the sixth aspect of the present invention, since the gas inlet is formed in an arc shape that is substantially concentric with the outer peripheral circle of the substrate, the opening area of the gas inlet can be made large, and the gas in the processing chamber can be supplied. The flow can be made more uniform.

According to the seventh aspect of the present invention, the opening area of the carry-in / out port is set to be smaller than about 12 times the opening area of the gas inlet, so that the gas flow rate at the carry-in / out port is relatively reduced. It is possible to increase. Therefore, it is effective to prevent entrainment of outside air.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a main configuration of a substrate heat treatment apparatus 1 according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view as viewed from a position II-II in FIG.

FIG. 3 is a cross-sectional view as viewed from a position III-III in FIG. 2;

FIG. 4 is a cross-sectional view as viewed from a position IV-IV in FIG. 2;

FIG. 5 is a diagram showing an outline of a YZ direction flow velocity distribution of a purge gas in a chamber 2.

FIG. 6 is a diagram showing an outline of an XY direction flow velocity distribution of a purge gas in a chamber 2.

FIG. 7 is a cross-sectional view as viewed from a position IV-IV in FIG. 2;

FIG. 8 is a diagram showing a purge gas flow velocity distribution in the X direction in the nozzle 10.

9 is a view showing a purge gas flow velocity distribution in the X direction at a gas outlet 9. FIG.

FIG. 10 is a cross-sectional view showing an arrangement of a current plate.

FIG. 11 is a cross-sectional view showing an arrangement of a current plate.

FIG. 12 is a cross-sectional view showing an arrangement of a current plate.

FIG. 13 is a cross-sectional view as viewed from the II-II position in FIG.

FIG. 14 is a cross-sectional view as viewed from the II-II position in FIG.

FIG. 15 is a cross-sectional view as viewed from a position XV-XV in FIG. 2;

FIG. 16 is a cross-sectional view as viewed from the position XV-XV in FIG. 2;

FIG. 17 is a cross-sectional view as viewed from the position XV-XV in FIG. 2;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate heat treatment apparatus 2 Chamber 5 Gas supply means 9 Gas inlet 10 Nozzle 11 Nozzle main body 12 Rectification path 12S Straight path 13 Gas inlet 14 Gas diffusion projection arrangement 14A, 14B, 14C Rectification plate (gas diffusion projection) 14d Notch 15 Nozzle outlet 20 Loading port 21 Container body 21N Casing 31 Lamp W Substrate

Claims (7)

[Claims] 1. A substrate heat treatment apparatus for performing heat treatment on a substrate, comprising: a processing chamber for storing a substrate; heating means for heating the substrate stored in the processing chamber; A loading / unloading port for loading / unloading the substrate into / from the processing chamber, and when loading the substrate into / from the processing chamber through the loading / unloading port,
A nozzle for supplying gas into the processing chamber, wherein the nozzle has a gas inlet provided at a position facing the carry-in / out port, and a rectifying path for rectifying gas guided to the gas inlet. Buffer means for increasing the uniformity of the gas flow by buffering the flow by the rectifying path, wherein the direction of the flow of the gas introduced from the gas introduction port is the direction of the substrate housed in the processing chamber. A substrate heat treatment apparatus characterized in that the direction is substantially parallel to the main surface. 2. The substrate heat treatment apparatus according to claim 1, wherein the substrate has a first main surface on which an electronic device is to be formed, and a second main surface corresponding to a back surface of the first main surface. Wherein the gas inlet is provided in the processing chamber, wherein
A substrate heat treatment apparatus, which is provided so as to be biased toward a main surface side. 3. The substrate heat treatment apparatus according to claim 1, wherein the rectification path has a flow path characteristic for diffusing a gas flow in an opening surface direction of the gas introduction port. Substrate heat treatment equipment. 4. The substrate heat treatment apparatus according to claim 1, wherein the buffering means projects into the rectification path and extends in a direction substantially perpendicular to a gas flowing direction into the rectification path. A substrate heat treatment apparatus, comprising: at least one protrusion extending in a band shape to diffuse a gas. 5. The substrate heat treatment apparatus according to claim 4, wherein the protrusion has notches at both ends. 6. The substrate heat treatment apparatus according to claim 1, wherein the substrate is a substantially circular substrate, and the gas inlet is formed in an arc shape substantially concentric with an outer peripheral circle of the substrate. A substrate heat treatment apparatus. 7. The substrate heat treatment apparatus according to claim 1, wherein an opening area of the carry-in / out port is within about 12 times an opening area of the gas introduction port. Substrate heat treatment equipment.