JP2000223524A - Wire bonder and wire-bonding method - Google Patents

Wire bonder and wire-bonding method

Info

Publication number
JP2000223524A
JP2000223524A JP11019478A JP1947899A JP2000223524A JP 2000223524 A JP2000223524 A JP 2000223524A JP 11019478 A JP11019478 A JP 11019478A JP 1947899 A JP1947899 A JP 1947899A JP 2000223524 A JP2000223524 A JP 2000223524A
Authority
JP
Japan
Prior art keywords
height
chip
wire
electrode
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11019478A
Other languages
Japanese (ja)
Inventor
Takayuki Yoshiyama
隆幸 吉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11019478A priority Critical patent/JP2000223524A/en
Publication of JP2000223524A publication Critical patent/JP2000223524A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/789Means for monitoring the connection process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]

Abstract

PROBLEM TO BE SOLVED: To realize a wire bonder and a wire-bonding method whereby the chip height is detectable, without needing a separate exclusive appearance inspector. SOLUTION: In this wire bonding for connecting electrodes 3a of a chip 3 to electrodes 2a on a board 2 through bonding wires 4, a ball formed on the top end of the wire 4 is contacted and bonded to the electrode 3a, the height position of a capillary tool 13 is detected at a timing at which a touch sensor detects the contact and the detection result is stored in a detection result memory, the chip height is computed, based on the stored detection result, and the obtained chip height is compared with a predetermined allowance of the chip height to output the comparison result. Thus it is possible to inspect the chip height in the wire bonding, without needing a separate exclusive inspector.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体チップを基
板と電気的に接続するワイヤボンディング装置およびワ
イヤボンディング方法に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a wire bonding apparatus and a wire bonding method for electrically connecting a semiconductor chip to a substrate.

【0002】[0002]

【従来の技術】基板に搭載された半導体チップを基板の
回路と電気的に接続する方法としてワイヤボンディング
による方法が知られている。このワイヤボンディングに
おいては、チップに形成された電極にワイヤの端部を押
圧してボンディングした後にこのワイヤを基板の回路電
極まで導いてボンディングを行うことにより、チップの
電極と基板の電極とをワイヤを介して導通させるもので
ある。
2. Description of the Related Art As a method for electrically connecting a semiconductor chip mounted on a substrate to a circuit on the substrate, a method using wire bonding is known. In this wire bonding, the end of the wire is pressed against the electrode formed on the chip and bonded, and then the wire is guided to the circuit electrode of the substrate to perform bonding, thereby connecting the electrode of the chip and the electrode of the substrate. Is made to conduct through.

【0003】ところで半導体パッケージは小型化、薄型
化の傾向にあり、ワイヤボンディング工程ではボンディ
ング後のワイヤ高さが所定高さ以下となるように管理す
ることが求められる。ワイヤ高さが所定高さを超えて過
大になると、ボンディング後の樹脂封止時に樹脂によっ
て完全にカバーされずワイヤの保護が不十分となる場合
があるからである。またプリンタ用のサーマルヘッド基
板など、製品の種類によっては実装後のチップ高さが一
定の許容範囲内にあることが求められる場合がある。こ
のように基板に搭載されたチップの高さは所定範囲内に
管理される必要があるため、従来はワイヤボンディング
後に専用の外観検査装置によるチップ高さ検査が行われ
ていた。
[0003] By the way, semiconductor packages tend to be smaller and thinner, and in a wire bonding step, it is required to manage the wire height after bonding to be equal to or less than a predetermined height. If the wire height exceeds a predetermined height and becomes excessive, the resin may not be completely covered at the time of resin sealing after bonding, and the protection of the wire may be insufficient. Also, depending on the type of product, such as a thermal head substrate for a printer, the chip height after mounting may be required to be within a certain allowable range. As described above, since the height of the chip mounted on the substrate needs to be controlled within a predetermined range, conventionally, after the wire bonding, a chip height inspection is performed by a special appearance inspection device.

【0004】[0004]

【発明が解決しようとする課題】しかしながらこの従来
の方法では、ワイヤボンディング後に改めて別途外観検
査装置で基板上のチップを撮像することにより、光学的
にチップ高さを検出することが行われるため、1つのチ
ップ高さ検出に1sec.以上の時間を要し、1枚の基
板では相当の検査時間を必要とするという問題点があっ
た。
However, in this conventional method, the height of the chip is detected optically by separately picking up an image of the chip on the substrate with a visual inspection device after wire bonding. 1 sec. For detecting the height of one tip. The above-described time is required, and there is a problem that one board requires a considerable inspection time.

【0005】そこで本発明は、別途専用の外観検査装置
を必要とせずチップ高さを検出することができるワイヤ
ボンディング装置およびワイヤボンディング方法を提供
することを目的とする。
Accordingly, an object of the present invention is to provide a wire bonding apparatus and a wire bonding method capable of detecting a chip height without requiring a special appearance inspection apparatus separately.

【0006】[0006]

【課題を解決するための手段】請求項1記載のワイヤボ
ンディング装置は、基板に搭載されたチップの電極と基
板の電極とをボンディングワイヤによって接続するワイ
ヤボンディング装置であって、前記チップの電極の高さ
を検出する高さ検出手段と、この高さ検出手段による検
出結果を記憶する検出結果記憶部と、チップの高さ許容
値を記憶するチップ高さ許容値記憶部と、前記検出結果
を高さ許容値と比較するチップ高さ比較手段とを備え
た。
According to a first aspect of the present invention, there is provided a wire bonding apparatus for connecting an electrode of a chip mounted on a substrate to an electrode of the substrate by a bonding wire. Height detection means for detecting the height, a detection result storage unit for storing a detection result by the height detection means, a chip height allowable value storage unit for storing a chip height allowable value, A tip height comparing means for comparing with a height allowable value.

【0007】請求項2記載のワイヤボンディング方法
は、基板に搭載されたチップの電極と基板の電極とをボ
ンディングワイヤによって接続するワイヤボンディング
方法であって、基板に搭載されたチップの電極にボンデ
ィングツールに保持されたボンディングワイヤの先端部
に形成されたボールを当接させることにより、このボー
ルをチップの電極にボンディングするとともに前記電極
の高さを高さ検出手段によって検出する工程と、この検
出結果を検出結果記憶部に記憶させる工程と、記憶され
た検出結果に基づいてチップ高さを計算する工程と、求
められたチップ高さを予め定められたチップ高さの許容
値と比較する工程と、比較結果を出力する工程とを含
む。
According to a second aspect of the present invention, there is provided a wire bonding method for connecting an electrode of a chip mounted on a substrate and an electrode of the substrate by a bonding wire, wherein the bonding tool is connected to the electrode of the chip mounted on the substrate. Contacting a ball formed at the tip of a bonding wire held at the tip of the bonding wire to bond the ball to an electrode of a chip and detecting the height of the electrode by height detecting means; A step of storing the detected chip height in the detection result storage unit, a step of calculating the chip height based on the stored detection result, and a step of comparing the obtained chip height with a predetermined allowable value of the chip height. And outputting the comparison result.

【0008】本発明によれば、ワイヤボンディング時の
ボンディングツール先端部に保持されたボールをチップ
の電極に当接させる際に検出される電極の高さに基づい
てチップ高さを計算して求めることにより、別途専用の
検査装置を必要とせずにワイヤボンディング時にチップ
高さを検査することができる。
According to the present invention, the tip height is calculated and obtained based on the height of the electrode detected when the ball held at the tip of the bonding tool is brought into contact with the tip electrode during wire bonding. Thus, the chip height can be inspected at the time of wire bonding without requiring a special inspection device separately.

【0009】[0009]

【発明の実施の形態】次に本発明の実施の形態を図面を
参照して説明する。図1は本発明の一実施の形態のワイ
ヤボンディング装置の斜視図、図2は同ワイヤボンディ
ング対象の基板の斜視図、図3は同ワイヤボンディング
装置の制御系の構成を示すブロック図、図4は同ワイヤ
ボンディング方法のフロー図である。
Embodiments of the present invention will now be described with reference to the drawings. 1 is a perspective view of a wire bonding apparatus according to an embodiment of the present invention, FIG. 2 is a perspective view of a substrate to be wire-bonded, FIG. 3 is a block diagram showing a configuration of a control system of the wire bonding apparatus, and FIG. FIG. 3 is a flowchart of the wire bonding method.

【0010】まず図1を参照してワイヤボンディング装
置の構造を説明する。基台1の上面には基板2が載置さ
れており、基板2の上面には細長形状のチップ3が列状
に搭載されている。チップ3はボンディングワイヤ4に
よって基板2と電気的に接続される。
First, the structure of a wire bonding apparatus will be described with reference to FIG. A substrate 2 is mounted on the upper surface of the base 1, and elongated chips 3 are mounted in a row on the upper surface of the substrate 2. The chip 3 is electrically connected to the substrate 2 by bonding wires 4.

【0011】基台1の側方には可動テーブル10が設置
されている。可動テーブル10は、X軸モータ10Xお
よびY軸モータ10Yを備えている。可動テーブル10
上には駆動ボックス11が設けられており、駆動ボック
ス11からはホーン12が前方へ延出している。ホーン
12の先端部にはキャピラリツール13が保持されてお
り、キャピラリツール13にはスプール14から繰り出
されたワイヤ15が挿通されている。ワイヤ15はキャ
ピラリツール13の上方に配置されたクランパ16によ
ってクランプされている。
A movable table 10 is provided beside the base 1. The movable table 10 includes an X-axis motor 10X and a Y-axis motor 10Y. Movable table 10
A drive box 11 is provided on the upper side, and a horn 12 extends forward from the drive box 11. A capillary tool 13 is held at the tip of the horn 12, and a wire 15 fed from a spool 14 is inserted into the capillary tool 13. The wire 15 is clamped by a clamper 16 disposed above the capillary tool 13.

【0012】キャピラリツール13の近傍にはトーチ1
7が配設されている。キャピラリツール13を挿通して
先端部より突出したワイヤ15とトーチ17の先端部の
間でスパークを発生させることにより、ワイヤ15の先
端部は溶融して球状となりボールが形成される。X軸モ
ータ10XおよびY軸モータ10Yを駆動すると可動テ
ーブル10上の駆動ボックス11はX方向およびY方向
へ水平移動する。駆動ボックス11内には図示しないZ
軸モータが備えられており、Z軸モータを駆動すること
により、キャピラリツール13は上下動する。駆動ボッ
クス11にはカメラ20が備えられており、カメラ20
は基板2上のチップ3を撮像する。21は表示モニタで
あり、カメラ20の撮像画面や操作・入力時の画面およ
び所定の報知を表示する。
The torch 1 is located near the capillary tool 13.
7 are provided. By generating a spark between the distal end of the torch 17 and the wire 15 protruding from the distal end through the capillary tool 13, the distal end of the wire 15 is melted into a spherical shape to form a ball. When the X-axis motor 10X and the Y-axis motor 10Y are driven, the drive box 11 on the movable table 10 moves horizontally in the X and Y directions. Z not shown in the drive box 11
An axis motor is provided, and by driving the Z-axis motor, the capillary tool 13 moves up and down. The drive box 11 is provided with a camera 20.
Captures an image of the chip 3 on the substrate 2. Reference numeral 21 denotes a display monitor, which displays an imaging screen of the camera 20, a screen at the time of operation / input, and a predetermined notification.

【0013】次に図2を参照してワイヤボンディング対
象の基板2およびチップ3について説明する。図2にお
いて、基板2には電極2aが、また基板2に搭載された
チップ3には電極3aがそれぞれ形成されている。電極
2aと電極3aはボンディングワイヤ4によって接続さ
れる。このワイヤボンディングは、前述のようにワイヤ
15の先端部に形成されたボールをキャピラリツール1
3によって電極3aに押圧して圧着することにより行わ
れる。
Next, the substrate 2 and the chip 3 to be wire-bonded will be described with reference to FIG. In FIG. 2, an electrode 2a is formed on a substrate 2, and an electrode 3a is formed on a chip 3 mounted on the substrate 2. The electrode 2a and the electrode 3a are connected by a bonding wire 4. In this wire bonding, the ball formed at the distal end of the wire 15 is connected to the capillary tool 1 as described above.
3 by pressing against the electrode 3a.

【0014】このボンディング動作において、キャピラ
リツール13がボールを電極3aに当接させたタイミン
グにおけるキャピラリツール13の高さ位置は図外のタ
ッチセンサによって検出され、この検出結果から電極3
aと電極2aとを結ぶボンディングワイヤのループの高
さ方向の起点が求められるとともに、各電極3aの高さ
hを求めることができる。また、基板2およびチップ3
にはそれぞれ位置認識用の認識マーク2b、3cが形成
されている。
In this bonding operation, the height position of the capillary tool 13 at the timing when the capillary tool 13 brings the ball into contact with the electrode 3a is detected by a touch sensor (not shown).
The starting point in the height direction of the loop of the bonding wire connecting a and the electrode 2a is obtained, and the height h of each electrode 3a can be obtained. Further, the substrate 2 and the chip 3
Are formed with recognition marks 2b and 3c for position recognition, respectively.

【0015】次に図3を参照してワイヤボンディング装
置の制御系の構成を説明する。図3において、ボンディ
ング動作制御部30は、ワイヤボンディング装置による
ボンディング動作全体を制御する。ヘッド駆動部は駆動
ボックス11を水平移動させるX軸モータ10X、Y軸
モータ10Yおよびキャピラリツール13を上下動させ
るZ軸モータ18を駆動する。認識部33はカメラ20
によって撮像されたデータに基づいてチップ3の位置を
認識する。
Next, the configuration of a control system of the wire bonding apparatus will be described with reference to FIG. In FIG. 3, a bonding operation control unit 30 controls the entire bonding operation by the wire bonding apparatus. The head driving unit drives an X-axis motor 10X for horizontally moving the drive box 11, a Y-axis motor 10Y, and a Z-axis motor 18 for vertically moving the capillary tool 13. Recognition section 33 is camera 20
The position of the chip 3 is recognized based on the data captured by the camera.

【0016】接地高さ検出部34は高さ検出手段であ
り、キャピラリツール13の下端部がチップ3の電極3
aに当接したタイミングをタッチセンサ35によって検
出し、そのタイミングでのキャピラリツール13の高さ
位置をZ軸モータ18のエンコーダの信号により求め
る。すなわち、チップ3の各電極3aでの高さ(以下
「チップ高さ」と略称)を求める。ここで求められたチ
ップ高さは、チップ高さ検出結果記憶部37に記憶され
る。チップ高さ比較判定部36はチップ高さ比較手段で
あり、前記チップ高さ検出結果をチップ高さ許容値記憶
部38に記憶された許容値と比較することにより、チッ
プ高さの合否判定を行う。合否判定結果は表示部32に
よって表示処理され、モニタ21に画面表示される。
The ground height detector 34 is a height detector, and the lower end of the capillary tool 13 is connected to the electrode 3 of the chip 3.
The timing at which the capillary tool 13 a comes into contact is detected by the touch sensor 35, and the height position of the capillary tool 13 at that timing is obtained from the signal of the encoder of the Z-axis motor 18. That is, the height at each electrode 3a of the chip 3 (hereinafter, abbreviated as "chip height") is determined. The chip height obtained here is stored in the chip height detection result storage unit 37. The chip height comparison / determination unit 36 is a chip height comparison unit, and compares the chip height detection result with an allowable value stored in the chip height allowable value storage unit 38 to determine whether the chip height is acceptable. Do. The result of the pass / fail judgment is displayed on the display unit 32 and displayed on the screen of the monitor 21.

【0017】このワイヤボンディング装置は上記の様に
構成されており、以下ワイヤボンディング方法について
図4のフローに沿って説明する。まず図1においてチッ
プ3が搭載された基板2が搬入され、基台1上に載置さ
れる(ST1)。次にカメラ20により基板2を撮像
し、これによりまず基板2の認識マーク2bを認識する
(ST2)。次いで同様にチップ3の認識マーク3cを
認識する(ST3)。そしてチップ3の電極3aと基板
2の電極2aの間をワイヤボンディングする(ST
4)。
This wire bonding apparatus is configured as described above. The wire bonding method will be described below with reference to the flow chart of FIG. First, in FIG. 1, the substrate 2 on which the chip 3 is mounted is carried in, and is mounted on the base 1 (ST1). Next, an image of the substrate 2 is taken by the camera 20, whereby the recognition mark 2b of the substrate 2 is first recognized (ST2). Next, the recognition mark 3c of the chip 3 is similarly recognized (ST3). Then, wire bonding is performed between the electrode 3a of the chip 3 and the electrode 2a of the substrate 2 (ST
4).

【0018】このとき、キャピラリツール13が電極3
aに当接したタイミングより電極3aの上面高さ位置を
接地高さ検出部34によって求め、チップ高さ検出結果
記憶部37に記憶させる(ST5)。そしてこの処理を
順次全ボンディング対象について行い、ST6にてボン
ディング対象のワイヤ無しが確認されたならば、チップ
高さの計算を行い(ST7)、次いで求められたチップ
高さを、チップ高さ許容値記憶部38に記憶された許容
値と比較し、比較結果を出力する(ST8)。
At this time, the capillary tool 13 is
The height position of the upper surface of the electrode 3a is determined by the ground height detector 34 from the timing of contact with a, and is stored in the chip height detection result storage 37 (ST5). This process is sequentially performed on all the bonding targets. If there is no wire to be bonded in ST6, the chip height is calculated (ST7), and the obtained chip height is set to the chip height allowable. The value is compared with the allowable value stored in the value storage unit 38, and the comparison result is output (ST8).

【0019】比較の結果、誤差が許容値を超えている場
合には(ST9)、エラー処理を行い(ST10)、モ
ニタ21に判定結果を表示する。ST9の判定で許容値
以下であり、合格判定の場合には、次チップ3のボンデ
ィングを順次行う。すなわちST11にて次チップ無し
が確認されるまでST2以降のステップを繰り返す。そ
して次チップ無しが確認されると基板2を搬出し(ST
12)、ワイヤボンディング工程を終了する。
As a result of the comparison, if the error exceeds the allowable value (ST9), error processing is performed (ST10), and the judgment result is displayed on the monitor 21. If the value is equal to or less than the allowable value in the determination of ST9 and the determination is a pass, the bonding of the next chip 3 is sequentially performed. That is, the steps after ST2 are repeated until it is confirmed in ST11 that there is no next chip. When it is confirmed that there is no next chip, the substrate 2 is unloaded (ST
12) End the wire bonding step.

【0020】上記説明したように、本実施の形態のワイ
ヤボンディング方法は、従来ボンディングワイヤのルー
プ形成の高さ方向の起点特定のためにのみ用いられてい
たキャピラリツールの接地高さ検出結果を利用してチッ
プ高さを求めるものである。これにより、実装後のチッ
プ高さ管理が必要な製品を対象とする場合にも、別途外
観検査装置によって再認識を行う必要がなく、工程の簡
略化と設備費用の削減を図ることができる。
As described above, the wire bonding method according to the present embodiment utilizes the detection result of the grounding height of the capillary tool, which has conventionally been used only for specifying the starting point in the height direction of the loop formation of the bonding wire. Then, the chip height is obtained. This eliminates the need for re-recognition by a visual inspection device separately for a product requiring chip height management after mounting, thereby simplifying the process and reducing equipment costs.

【0021】[0021]

【発明の効果】本発明によれば、ワイヤボンディング時
のボンディングツール先端部に保持されたボールをチッ
プの電極に当接させる際に検出される電極の高さに基づ
いてチップ高さを計算して求めるようにしたので、別途
専用の外観検査装置を用いることなくチップ高さの検査
をワイヤボンディング工程において同時に行うことがで
き、工程簡略化とともに設備費用削減を図ることができ
る。
According to the present invention, the tip height is calculated based on the electrode height detected when the ball held at the tip of the bonding tool is brought into contact with the tip electrode during wire bonding. Therefore, the chip height can be inspected at the same time in the wire bonding step without using a special appearance inspection apparatus, thereby simplifying the step and reducing the equipment cost.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態のワイヤボンディング装
置の斜視図
FIG. 1 is a perspective view of a wire bonding apparatus according to an embodiment of the present invention.

【図2】本発明の一実施の形態のワイヤボンディング対
象の基板の斜視図
FIG. 2 is a perspective view of a substrate to be wire-bonded according to an embodiment of the present invention.

【図3】本発明の一実施の形態のワイヤボンディング装
置の制御系の構成を示すブロック図
FIG. 3 is a block diagram illustrating a configuration of a control system of the wire bonding apparatus according to the embodiment of the present invention;

【図4】本発明の一実施の形態のワイヤボンディング方
法のフロー図
FIG. 4 is a flowchart of a wire bonding method according to an embodiment of the present invention;

【符号の説明】[Explanation of symbols]

2 基板 3 チップ 4 ボンディングワイヤ 20 カメラ 33 認識部 34 接地高さ検出部 35 タッチセンサ 36 チップ高さ比較判定部 37 チップ高さ検出結果記憶部 38 チップ高さ許容値記憶部 2 Substrate 3 Chip 4 Bonding wire 20 Camera 33 Recognition unit 34 Ground height detection unit 35 Touch sensor 36 Chip height comparison / determination unit 37 Chip height detection result storage unit 38 Chip height allowable value storage unit

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】基板に搭載されたチップの電極と基板の電
極とをボンディングワイヤによって接続するワイヤボン
ディング装置であって、前記チップの電極の高さを検出
する高さ検出手段と、この高さ検出手段による検出結果
を記憶する検出結果記憶部と、チップの高さ許容値を記
憶するチップ高さ許容値記憶部と、前記検出結果を高さ
許容値と比較するチップ高さ比較手段とを備えたことを
特徴とするワイヤボンディング装置。
1. A wire bonding apparatus for connecting an electrode of a chip mounted on a substrate to an electrode of the substrate by a bonding wire, comprising: height detecting means for detecting the height of the electrode of the chip; A detection result storage unit that stores a detection result of the detection unit, a chip height allowable value storage unit that stores a chip height allowable value, and a chip height comparison unit that compares the detection result with a height allowable value. A wire bonding apparatus comprising:
【請求項2】基板に搭載されたチップの電極と基板の電
極とをボンディングワイヤによって接続するワイヤボン
ディング方法であって、基板に搭載されたチップの電極
にボンディングツールに保持されたボンディングワイヤ
の先端部に形成されたボールを当接させることにより、
このボールをチップの電極にボンディングするとともに
前記電極の高さを高さ検出手段によって検出する工程
と、この検出結果を検出結果記憶部に記憶させる工程
と、記憶された検出結果に基づいてチップ高さを計算す
る工程と、求められたチップ高さを予め定められたチッ
プ高さの許容値と比較する工程と、比較結果を出力する
工程とを含むことを特徴とするワイヤボンディング方
法。
2. A wire bonding method for connecting an electrode of a chip mounted on a substrate and an electrode of the substrate by a bonding wire, the tip of the bonding wire held by a bonding tool on the electrode of the chip mounted on the substrate. By contacting the ball formed in the part,
Bonding the ball to an electrode of the chip and detecting the height of the electrode by height detecting means; storing the detection result in a detection result storage unit; and detecting the chip height based on the stored detection result. A wire bonding method, comprising: calculating a height of the chip, comparing the obtained chip height with a predetermined allowable value of the chip height, and outputting a comparison result.
JP11019478A 1999-01-28 1999-01-28 Wire bonder and wire-bonding method Pending JP2000223524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11019478A JP2000223524A (en) 1999-01-28 1999-01-28 Wire bonder and wire-bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11019478A JP2000223524A (en) 1999-01-28 1999-01-28 Wire bonder and wire-bonding method

Publications (1)

Publication Number Publication Date
JP2000223524A true JP2000223524A (en) 2000-08-11

Family

ID=12000459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11019478A Pending JP2000223524A (en) 1999-01-28 1999-01-28 Wire bonder and wire-bonding method

Country Status (1)

Country Link
JP (1) JP2000223524A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101231192B1 (en) * 2008-03-19 2013-02-07 삼성테크윈 주식회사 Wire bonding monitoring apparatus and wire bonder and method for monitoring bonding height of wire ball
JP2016167557A (en) * 2015-03-10 2016-09-15 日亜化学工業株式会社 Method of detecting mounting failure of semiconductor element
US11004821B2 (en) * 2016-08-23 2021-05-11 Shinkawa Ltd. Wire bonding method and wire bonding apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101231192B1 (en) * 2008-03-19 2013-02-07 삼성테크윈 주식회사 Wire bonding monitoring apparatus and wire bonder and method for monitoring bonding height of wire ball
JP2016167557A (en) * 2015-03-10 2016-09-15 日亜化学工業株式会社 Method of detecting mounting failure of semiconductor element
US11004821B2 (en) * 2016-08-23 2021-05-11 Shinkawa Ltd. Wire bonding method and wire bonding apparatus

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