JP2000199059A - Sputtering method and sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently form a film having desired film quality performance. SOLUTION: In the case plasma is generated on the space between a film forming object arranged in a treating chamber fed with prescribed gas and a target to form a film on the surface of the film forming object, the film forming object is previously fitted to a prescribed fitting object, a treating object in a state in which the film forming object is fitted to the fitting object is fixed to a prescribed position in the treating chamber, and, by plasma generated on the space between the film forming object in the treating object and the target arranged at a prescribed position in the treating chamber separated from the film forming object by prescribed intervals and also so as to be confronted with each other, a film is formed on the surface of the film forming object.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering method and a sputtering apparatus, and is suitably applied to, for example, a sputtering apparatus used in a process of manufacturing a plasma emission type liquid crystal display device.

[0002]

2. Description of the Related Art Conventionally, a plasma addressed liquid crystal (PALC: Pl) has been used as a display device of a flat panel display.
Asma Addressed Liquid Crystal) A liquid crystal display device of a driving system has been proposed.

As shown in FIG. 5, a liquid crystal display device 100 is provided with a first polarizing plate 102 on a backlight 101 made of a dispersion type AC-driven electroluminescence through a first polarizing plate 102.
And a cathode electrode 106 and an anode electrode 107 connected to a DC power supply 104 and / or an AC power supply 105 are provided at predetermined positions on the first glass substrate 103. Glass substrate 10
An insulating film layer 109 made of an insulating material such as thin glass is fixed on the third glass substrate 3 via an O-ring 108 made of a rubber material such as Viton, and the first glass substrate 103 and the O-ring 108
Further, an inert gas such as argon is sealed in a sealed space 110 surrounded by the insulating film layer 109 to form a plasma light emitting unit 111.

In the liquid crystal display device 100, only a plasma light emitting portion 111 for one pixel is shown in the drawing, and after a backlight 101 is turned on, a DC power supply 104 and / or an AC power supply 105 By applying a predetermined voltage so that the cathode electrode 106 has a negative potential and discharging the plasma, the plasma
2 is generated, and the charged particles can be generated accordingly.

In the liquid crystal display device 100, for example, a TN (Twisted Nem) is formed on the insulating film layer 109 of the plasma light emitting portion 111.
atic: twisted nematic) liquid crystal layer 1
13 and a color filter layer 1 such as an RGB vertical stripe type
The second glass substrate 116 and the second polarizing plate 117 are formed via the conductive layer 14 and an electrode layer 115 made of a conductive transparent oxide having an electrically low resistance (for example, tin oxide, SnO ₂ , ZnO) or the like. They are sequentially stacked.

Further, the liquid crystal display device 100 includes the electrode layer 11
A potential difference generating means (not shown) is connected between the first electrode 5 and the anode electrode 107 of the plasma light emitting section 111, thereby generating a potential difference based on the potential of the anode electrode 107.

Thus, the liquid crystal display device 100 is supplied from the potential difference generating means between the electrode layer 115 and the anode electrode 107 by using the charged particles generated when the plasma 112 is generated in the plasma light emitting section 111 as switching elements. The applied voltage is applied to the liquid crystal layer 113 and the insulating film layer 109. At this time, the liquid crystal layer 113 is charged because a voltage is applied.

Then, the liquid crystal display device 100
When the charged particles disappear after a certain period of time from the end of the discharge of 12, the sealed space 110 is insulated, so that no voltage is applied to the liquid crystal layer 113 any more, and the liquid crystal layer 113 is not applied until the next plasma discharge occurs. Holds the charged charge.

As described above, the liquid crystal display device 100 controls the liquid crystal layer 113 by the plasma discharge to block or transmit the transmitted light from the backlight 101, and to control the liquid crystal layer 113 by the plasma discharge. An image is displayed by performing line-sequential scanning in combination with the device 117.

In such a liquid crystal display device 100, it is necessary to maintain the inside of the sealed space 110 in a vacuum state in order to generate the plasma 112 in the plasma light emitting section 111.
Therefore, if a situation occurs in which the inert gas sealed in the sealed space 110 leaks through the insulating film layer 109 made of thin glass, a vacuum state cannot be maintained and a normal plasma discharge may be generated. Disappears.

Therefore, a film made of SiO ₂ or the like is formed on the surface of the insulating film layer 109 made of thin glass forming the sealed space 110 so that the inert gas sealed in the sealed space 110 is insulated. It is indispensable to provide a film quality performance that does not pass through the film layer 109 and maintain a vacuum state in the sealed space 110.

As a sputtering apparatus used for performing such a film forming process, a disk-shaped metal lump (a metal lump) is placed in a vacuum chamber evacuated to a high vacuum, usually on the order of 10 ^-7 to 10 ^-9 [Torr]. In this case, a target made of silicon lump) and a thin glass as the insulating film layer 109 to be formed are arranged so as to be parallel to each other at a predetermined distance, and an inert gas of Ar is supplied into the vacuum chamber. Then, a plasma is generated by generating a potential difference of about 1000 [V] between the target and the thin glass using the target as a cathode and the thin glass as an anode.

[0013] The sputtering apparatus, after Ar ⁺ ions ionized in a vacuum chamber by plasma generated between the target and the thin glass sheet to collide with the target, pops the Si atoms from the target surface, O ₂ and N _By supplying a reaction gas such as ₂ into a vacuum chamber and causing a chemical reaction, a film such as a SiO ₂ film or a SiN ₂ film is formed on a thin glass.

The thin glass sheet on which the film is formed in this manner is evaluated as having higher film quality as the amount of gas molecules passing through the film is smaller. Such a film quality performance evaluation test has been performed in the atmosphere by a dedicated evaluation device after the thin glass is removed from the sputtering device after the film forming process is completed by the sputtering device.

[0015]

When an evaluation test of the film quality is performed in the air, the film formed on the surface of the thin glass is gradually oxidized. Therefore, when the evaluation test of the film quality characteristics was performed using the oxidized film, the film quality performance could not be accurately evaluated.

Further, even if the film quality performance can be accurately evaluated by the film quality performance evaluation test, if a film having the desired film quality performance is not formed,
There is a problem that the film forming process has to be restarted and the process is complicated.

Further, an insulating film layer 109 made of thin glass on which a film having desired film quality performance is formed, is
In the manufacturing process in which the insulating film layer 109 is fixed to the first glass substrate 103 via the thin film 08, the insulating film layer 109 has a disadvantage that the insulating film layer 109 is easily broken and difficult to handle because it is a thin glass. There is a problem that cannot be improved.

The present invention has been made in view of the above points, and an object of the present invention is to propose a sputtering method and a sputtering apparatus capable of efficiently forming a film having desired film quality performance on a film formation target.

[0019]

According to the present invention, in order to solve the above-mentioned problems, a plasma is generated between a film-forming target disposed in a processing chamber to which a predetermined gas is supplied and a target, thereby forming a film-forming target. When forming a film on the surface of the film, the film formation target is attached to a predetermined attachment target in advance,
A process in which a processing target with a film formation target attached to a mounting target is fixed at a predetermined position in a processing chamber, and a processing target is formed such that the processing target is separated from the film formation target by a predetermined distance and faces each other. A film is formed on a surface of a film formation target by plasma generated between the target and a target disposed at a predetermined position in a room.

In this manner, a film is formed on a film-forming target, and when the film-forming target on which the film is formed is damaged when the film-forming target is attached to a mounting target, the film is formed up to that time. Although the processing is wasted, if the film is formed in a state where the film formation target is attached to the mounting target, the film formation processing is not wasted and the manufacturing time can be reduced.

Further, in the present invention, when a film is formed on the surface of a film-forming target by generating plasma between the film-forming target and a target disposed in a processing chamber supplied with a predetermined gas, A film is formed on a surface of a film formation target by generating plasma between a film target and a target disposed at a predetermined position in a processing chamber which is separated from the film formation target by a predetermined distance and opposed to each other, By passing predetermined gas particles to be observed through the film formed on the surface of the film formation target, and heating the film formation target by the heating means, the amount of film passage of the observation target is increased compared to before heating. Then, the film quality of the film is detected by monitoring the amount of the heated film formation object and the amount of the observation object passing through the film.

As a result, when the object to be film-formed is heated, the movement of the molecules constituting the object to be film-formed becomes active, so that the amount of the predetermined gas particles to be observed to pass through the film is increased. By detecting the film quality of the film based on the amount, the detection criterion can be raised to form a film having more excellent film quality characteristics.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings.

In FIG. 1, in which parts corresponding to those in FIG. 5 are denoted by the same reference numerals, reference numeral 200 denotes a plasma light emitting portion as a processing object used when forming a film in the present invention as a whole. Instead of the insulating film layer 109 (FIG. 5), a transparent polymer film 201 made of a film-like insulating resin material having elasticity such as polycarbonate is fixed to the first glass substrate 103 via an O-ring 108. It is formed by this. This plasma light emitting section 2
Reference numeral 00 denotes a film forming process performed in a state where the film is integrated with the polymer film 201.

In this case, since the plasma light emitting section 200 uses the film-like polymer film 201 which is more resistant to cracking and lighter than thin glass,
Polymer film 2 in a state that is easy to handle in the manufacturing process
01 can be fixed. Here, the sealed space 205 surrounded by the polymer film 201, the O-ring 108, and the first glass substrate 103 needs to maintain the degree of vacuum, and for that purpose, has a film quality characteristic that gas molecules do not pass through. The film is a polymer film 20
1 must be formed on the surface.

Therefore, as a sputtering apparatus 1 for forming a film having desired film quality characteristics on the surface of the polymer film 201 of the plasma light emitting section 200 having such a configuration,
As shown in FIG. 2, the plasma light emitting unit 200 to which the polymer film 201 is fixed is attached via the substrate holder 3 fixed to the housing portion of the vacuum chamber 2, and the polymer film 201 of the plasma light emitting unit 200 is attached. The target 5 is fixed at a position spaced apart from the vacuum chamber 2 by a predetermined distance, and is evacuated by a turbo molecular pump 6 and a mechanical pump 7 provided outside the vacuum chamber 2 to evacuate the inside of the vacuum chamber 2 to, for example, 10 ^−8. Set to [Torr] high vacuum.

In this case, the substrate holder 3 has a recess having the same shape as that of the plasma light emitting section 200.
Is attached so that only the polymer film 201 protrudes from the surface of the substrate holder 3.

The target 5 has a cylindrical shape of silicon on the outer peripheral side 5A and titanium on the inner peripheral side 5B, and a backing plate 8 of the same shape is fixed to the lower part of the target 5, and the backing plate 8 is interposed via an insulating ring 9. It is attached in a state of being electrically insulated from the housing of the vacuum chamber 2.

The target 5 is connected to a variable cathode power supply 10 and a 13.56 [MHz] RF (Rad
The power supply 11 is connected to a power supply 11, and a voltmeter 12 is attached to the variable cathode power supply 10. Voltmeter 1
2 detects a voltage value applied to the target 5,
The detection result is sent to an analog / digital conversion and digital / analog conversion circuit (hereinafter referred to as an A / D and D / A conversion circuit) 13.

The A / D and D / A conversion circuit 13 converts the detection result of the voltmeter 12 into digital data and sends it to the control unit 14 comprising a CPU (Central Processing Unit) as detection data. After recognizing the actual voltage value currently applied to the target 5 based on the detection data, the control unit 14 calculates difference data from the target voltage value, and converts the data into an A / D and D / A conversion circuit. 13.

The A / D and D / A conversion circuit 13 converts the differential data into an analog signal and supplies the analog signal as a differential signal to the variable cathode power supply 10, so that the target 5 is transmitted to the target 5 via the variable cathode power supply 10. The target voltage can be applied.

The sputtering apparatus 1 changes the voltage applied to the target 5 under the control of the control unit 14 so that the surface of the target 5 is shaved by Ar ⁺ ions generated in the plasma (hereinafter, referred to as the area). This is called the erosion area).
Thus, the outer peripheral side 5A and the inner peripheral side 5B of the target 5 can be used properly during sputtering.

In the sputtering apparatus 1, a dark space shield 15 is attached to the housing of the vacuum chamber 2 through a small gap between the target 5 and the backing plate 8 so as to cover the outer periphery of the target 5 and the backing plate 8. This prevents the sputtered particles from scattering around.

Around the dark space shield 15,
A hollow cylindrical gas ring 21 provided with a plurality of gas supply holes on its surface is provided from the peripheral end surface of the dark space shield 15 with a slight gap. Further, a gas dispersion plate 22 is attached around the gas ring 21 so that various gases supplied from the gas ring 21 are dispersed near the surface of the target 5.

The control unit 14 includes the mass flow controller 1
By controlling the opening / closing and opening / closing amounts of the opening / closing valve 17 and the opening / closing valves 18 to 20 via 6, the gas supply amounts of the inert gas of Ar and the reaction gas of O ₂ and N ₂ supplied from the gas ring 21 are controlled. It has been made to be.

The gas ring 21 has one end grounded and the other end connected to a variable cathode power supply 23 and a 13.56 [MHz] RF power supply 24. The gas ring 21 has a voltmeter 25 for detecting the supplied voltage value and current amount.
And an ammeter 26 are attached.
And the detection result detected by the ammeter 26 is sent to the A / D and D / A conversion circuit 13. The A / D and D / A conversion circuit 13 converts the detection result into digital data,
This is sent to the control unit 14 as detection data.

The control unit 14 controls A / A based on the detected data.
The variable cathode power supply 23 is controlled via the D and D / A conversion circuit 13, and a high-frequency alternating current flows from the variable cathode power supply 23
Thus, a magnetic field generated on the surface of the target 5 can be generated, thereby increasing the plasma density on the surface of the target 5.

A photosensor 27 is attached to the gas dispersion plate 22 at a predetermined position on the surface of the target 5 where the light emission state of the plasma can be detected.
The emission of the plasma detected by the above is sent to the monochromator 29 via the optical fiber 28. The monochromator 29 splits the emission of the plasma for each wavelength and sends the emission peak value for each wavelength to the control unit 14.

The control unit 14 controls the A / D and D so that the emission of a predetermined wavelength in the plasma has a desired emission peak value.
By controlling the variable cathode power supply 23 via the / A conversion circuit 13, the intensity of the magnetic field generated by the gas ring 21 is adjusted to control the plasma density on the surface of the target 5.

As a result, as shown in FIG. 3, the sputtering apparatus 1 has a high refractive index layer 301 of TiO ₂ , which is a conductive high refractive material, and a SiO ₂ high refractive index material, SiO _{2, on} the surface of the polymer film 201. Is formed by alternately laminating the low-refractive layers 302 of the first and second layers, and then a protective layer 304 is laminated on the ultraviolet leakage preventing layer 303 by using a Teflon (registered trademark) -based insulating material. The film 305 is formed.

In this case, the film 305 is formed by ultraviolet rays (not shown) generated when plasma is generated in the sealed space 205.
Can be sequentially attenuated by the interference of light in the high refractive layer 301 and the low refractive layer 302 of the ultraviolet leakage prevention layer 303, thereby preventing the ultraviolet from leaking to the outside.

Further, the sputtering apparatus 1 comprises a polymer film 2
A coil 30 formed in a spiral shape at a predetermined position between the target 01 and the target 5 is attached to a housing portion of the vacuum chamber 2 via an insulating holder 31. One end of the coil 30 is grounded and the other end is connected to the variable cathode power supplies 32 and 13.5.
It is connected to an RF power supply 33 of 6 [MHz].

The coil 30 is provided with a voltmeter 34 and an ammeter 35 for detecting a voltage value and a current amount to be supplied. The detection results detected by the voltmeter 34 and the ammeter 35 are A / D and A / D. The data is sent to the D / A conversion circuit 13. The A / D and D / A conversion circuit 13 converts the detection result into digital data and sends it to the control unit 14 as detection data.

The controller 14 controls the variable cathode power supply 32 based on the detection data to adjust the AC current flowing through the coil 30. In this case, the sputtering apparatus 1 controls the target 5 under the control of the control unit 14.
By applying a high-frequency alternating current to the coil 30 in a state where no voltage is applied to the coil 30, a state in which ions are easily generated by harmonic components generated by the alternating current is created, and plasma is generated between the coil 30 and the wall surface of the vacuum chamber 2. Is generated, and the positive ions in the plasma are made to collide with the polymer film 201 of the plasma light emitting section 200 so that the film 305 deposited on the surface of the polymer film 201 is scraped off by etching.

Accordingly, the sputtering apparatus 1 alternately switches the inner peripheral side and the outer peripheral side of the target 5 and
In the case where the film 305 formed on the surface of the film No. 01 has an unnecessarily large thickness, the film 305 is etched to be thinner and flatter, and finally the film 305 having a desired film thickness is obtained. It can be generated.

In the plasma light emitting section 200 (FIG. 3), a through-hole 210 for evacuation having a predetermined diameter is provided substantially at the center of the first glass substrate 103. Further, in the sputtering apparatus 1, an exhaust pipe 42 is attached via a housing portion of the vacuum chamber 2 so as to contact with a through hole 210 formed in the first glass substrate 103 of the plasma light emitting unit 200, and the exhaust pipe 42 is exhausted. The turbo molecular pump 43 and the mechanical pump 7 are connected to the pipe 42.

Accordingly, the sputtering apparatus 1 includes an exhaust pipe 42 and a turbo molecular pump 43 as passage means for observation during film formation.
And the polymer film 201 by the mechanical pump 7
By evacuating the vacuum chamber 2 through
The pressure state near the surface of the polymer film 201 can be set lower than the pressure state near the target 5.

In practice, the sputtering apparatus 1 is provided with a film 305 formed on the polymer film 201 when vacuum evacuation is performed.
Does not reach the desired film quality characteristics, the gas molecules in the vacuum chamber are exposed to film 305 and polymer film 20.
1, the pressure state in the vicinity of the surface of the polymer film 201 becomes lower than the pressure state in the vicinity of the target 5;
When 5 reaches the desired film quality characteristics, gas molecules hardly pass through and no pressure difference occurs.

In this case, when the pressure state near the surface of the polymer film 201 is lower than the pressure state near the target 5, plasma is less likely to be generated. To reduce the damage to the polymer film 201.

At this time, the pressure sensor 44 provided in the vicinity of the target 5 and the pressure sensor 45 provided in the vicinity of the polymer film 201 have a pressure value in a vacuum state near the target 5 and a pressure value in a vacuum state near the polymer film 201, respectively. A pressure value is detected, and the detection result is A / D
It is sent to the conversion circuit 49. The A / D conversion circuit 49 converts the detection result into digital data and sends it to the control unit 14 as detection data.

Thus, the control unit 14 calculates the pressure difference between the pressure value near the target 5 and the pressure value near the polymer film 201, and controls the opening / closing amount of the throttle valve 46 based on the pressure difference. The vacuum state in the vacuum chamber 2 is adjusted so that plasma can be generated at least in the vicinity of the target 5 when the inside of the vacuum chamber 2 is evacuated. Thus, the sputtering apparatus 1 generates plasma and performs a film forming process, and can reduce damage to the polymer film 201.

On the other hand, the sputtering apparatus 1 includes a quadrupole mass spectrometer 4 as a film quality detecting means connected to the exhaust pipe 42.
5, the mass of gas molecules passing through the polymer film 201 is detected. For example, the sputtering apparatus 1 includes He as an observation target in the vacuum chamber 2 via the opening / closing valve 20.
The gas is supplied, and the passing amount of the He gas particles is sent to the control unit 14 as a detection result.

At this time, the substrate holder 3 is provided with a heating coil 60 as a film forming object heating means via an insulating tube (not shown) around the plasma light emitting section 200 attached thereto. The polymer film 201 is heated.

As described above, the sputter apparatus 1 uses the quadrupole mass spectrometer 45 to pass H
When detecting the passage amount of e gas, the heating coil 6
When the polymer film 200 is heated by 0, the movement of the molecules constituting the polymer film 201 is activated, and the He gas which is easily passed can be detected, so that the sensitivity at the time of detection is improved. It is made to let.

At this time, the sputtering apparatus 1 uses He gas as gas particles to be used as an object to be observed, thereby producing an effect of improving the ionization speed at which argon gas in plasma is ionized and ionized (penning effect). The film forming speed is improved.

At the same time, the sputtering apparatus 1
The light transmittance of plasma emission as an observation target transmitted through the polymer film 201 is detected by the photosensor 47 as a film quality detection unit which is in contact with the plasma light emitting unit 200 through the housing part of the device, and the detection result is obtained. It is sent to the control unit 14.

In the meantime, the sputter device 1 passes through the film 305 because the thickness of the film 305 is small and the crystal size of the crystal forming the film 305 is small during the film formation on the polymer film 201. The amount of He gas passing through is large and the light transmittance is high. However, as the film 305 is gradually formed, the film thickness increases and the crystal size increases to improve the film quality performance.
The amount of He molecules passing through the polymer film 201 gradually decreases, and the light transmittance decreases.

The controller 14 monitors the change in the decrease in the amount of He gas passing through the polymer film 201 and the change in the light transmittance in the polymer film 201, and monitors the passage of the He gas. When the amount and the light transmittance reach predetermined target values, it is determined that the desired film quality performance has been reached, the generation of plasma is stopped, and the sputtering process is terminated.

The sputtering device 1 irradiates the surface of the polymer film 201 with an electron beam from an electron beam irradiator 51 by a driving circuit 50 driven under the control of the control unit 14 and reflects the scattered light to a CCD (CCD). Charge Coupled
Device) The detection is performed by a detector 52 composed of a camera, and the detection result is transmitted to the control unit 14 as image data D1.

The control unit 14 evaluates the crystal size of the film 305 deposited on the surface of the polymer film 201 based on the luminance change obtained from the image data D1, and controls the gas ring 21 so as to obtain a desired crystal size. The intensity of the generated magnetic field is adjusted. By the way, the control unit 1
4 is when the plasma density is increased according to the strength of the magnetic field,
The crystallization of the film 305 formed on the polymer film 201 is promoted to increase the crystal size, and the particles existing between the crystal grain boundaries, which are the boundaries between the crystal grains with the increase in the crystal size, are reduced. Since the crystallization is performed, the passage of He gas is made more difficult, and the film quality performance is improved.

Next, the procedure of the film forming process of the present invention in the sputtering apparatus 1 will be described with reference to the flowchart shown in FIG. In the sputtering apparatus 1, the process starts from the start step of RT1 and moves to step SP1. In step SP1, the sputtering apparatus 1 fixes the polymer film 201 to generate the plasma light-emitting unit 200, fixes the plasma light-emitting unit 200 to the substrate holder 3, and performs the next step SP1.
Move to 2.

In step SP2, the sputtering apparatus 1
Indicates that after setting the vacuum chamber 2 to a vacuum state,
The film forming process of 05 is started, and the process proceeds to the next step SP3.
In step SP3, the sputtering apparatus 1 heats the polymer film 201 via the heating coil 60, thereby activating the movement of the molecules constituting the polymer film 201 and easily passing the He gas. Then, the process proceeds to the next step SP4.

In step SP4, the sputtering apparatus 1
Detects the amount of He gas passing through the polymer film 201 and the light transmittance of the polymer film 201, and proceeds to the next step SP5. In step SP5, the sputtering apparatus 1 determines whether or not the film 305 being formed has the desired film quality characteristics based on the amount of light passing through the He gas and the light transmittance.

If a negative result is obtained here, this means that the film 305 during film formation does not reach the desired film quality characteristics, that is, does not reach a level capable of maintaining a vacuum state. At this time, the sputtering apparatus 1 repeats the above-described processing until desired film quality characteristics are obtained. On the other hand, if an affirmative result is obtained, it means that the film 305 during film formation has reached desired film quality characteristics, that is, has reached a level at which a vacuum state can be maintained. Moves to the next step SP6.

In step SP6, the sputtering apparatus 1
Since the film 305 being formed on the polymer film 201 has reached desired film quality characteristics, generation of plasma is stopped, and the process proceeds to the next step SP7 to terminate the film forming process by sputtering.

In the above configuration, the sputtering apparatus 1 uses the vacuum chamber 2 as a film forming means, the target 5, the variable cathode power supply 10 and the RF power supply 11 to
When the film 305 is formed on the surface of the substrate 01, plasma emission is performed not by fixing only the polymer film 201 to the substrate holder 3 but by fixing the polymer film 201 having elasticity. As the unit 200, a film forming process of the film 305 is performed.

In this case, the sputtering apparatus 1 fixes the plasma light emitting section 200 to which the polymer film 201 is fixed to the substrate holder 3 to form the film 305.
Conventional insulating film layer 109 made of thin glass (FIG. 5)
After performing the film forming process on the first glass substrate 103, the plasma light emitting unit 111 is formed.
It is possible to eliminate the waste of the film forming process caused by breaking the thin glass at the time of mounting, and thus shorten the manufacturing time.

The sputtering apparatus 1 evaluates the quality of the film while performing the film forming process.
When the gas passage amount and the light transmittance decrease and reach the target values, it can be determined that the crystal size of the film 305 has increased and the desired film quality performance has been obtained. The generation is stopped and the film forming process is terminated.

Therefore, the sputtering apparatus 1 evaluates the film quality performance in the air after the completion of the film forming process as in the prior art, and
If the desired film quality performance is not obtained, the film formation process can be performed while evaluating the film quality performance, compared with the case where the film formation process is performed again, so that a film having the desired film quality characteristics can be formed in a short time. It can be generated efficiently.

Further, the sputtering apparatus 1 does not oxidize the polymer film 201 by performing the evaluation of the film quality performance in a vacuum state in the vacuum chamber 2, so that accurate evaluation of the film quality performance is always stabilized. Can be done.

The sputtering device 1 is used to evaluate the quality of the film while performing the film forming process.
By heating the polymer film 201, the amount of He gas passing through the polymer film 201 can be increased to improve the detection sensitivity, thus forming the film 305 having more excellent film quality characteristics. can do.

According to the above-described configuration, the sputtering apparatus 1 can be used as the plasma light emitting section 2 with the polymer film 201 fixed thereto.
00 is fixed to the substrate holder 3 and the plasma
By forming the film 305 on the surface of the polymer film 201 of No. 0, the manufacturing time can be shortened and the film forming process can be performed efficiently.

Further, the sputtering apparatus 1 can be used to evaluate the quality of the film while performing the film forming process.
By heating the polymer film 201 by
By increasing the amount of He gas passing through the polymer film 201 and the film 305, the detection sensitivity can be increased, and thus the film 305 having more excellent film quality characteristics can be formed on the polymer film 201.

In the above embodiment, the film 30 is detected by the quadrupole mass spectrometer 45 as the film quality detecting means.
5, the amount of He gas passing through the formed polymer film 201 is detected. However, the present invention is not limited to this. Various other film quality detecting means such as a Faraday cup for converting the energy of the passing He gas into a current may be used. In this case, the same effect as in the above-described embodiment can be obtained.

Further, in the above-described embodiment, the case where the polymer film 201 is used as a film formation target for forming the film 305 by the sputtering apparatus 1 has been described. However, the present invention is not limited to this. 1 glass substrate 1
As long as it is attached to O3 via an O-ring 108, a film formation target made of glass or other various materials may be used.

Further, in the above-described embodiment, the polymer film 201 is provided by the heating coil 60 provided inside the substrate holder 3 as the heating means for film formation.
However, the present invention is not limited to this, and various other film-forming target heating means may be provided on the surface of the substrate holder 3 near the polymer film 201 to provide the polymer film 201. May be heated.

[0077]

As described above, according to the present invention, a film is formed on the surface of a film-forming target by generating plasma between the film-forming target and a target disposed in a processing chamber supplied with a predetermined gas. When forming a film, the film-forming object is attached to a predetermined mounting object in advance, and the processing object in a state where the film-forming object is mounted on the mounting object is fixed at a predetermined position in the processing chamber, and the film is formed on the processing object. By forming a film on the surface of a film formation target by plasma generated between a target and a target arranged at a predetermined position in a processing chamber separated from the film formation target by a predetermined distance and facing each other, When a film is formed on a film-forming target and the film-forming target is damaged when the film-forming target on which the film is formed is attached to a mounting object, the film forming process up to that point is useless. However, the deposition target is the mounting target Ri deposition treatment if at Tagged state film be wasted can be shortened manufacturing time without thus possible to realize a sputtering method capable of efficiently forming a film having a desired film quality performance.

According to the present invention, when a film is formed on the surface of a film-forming target by generating plasma between the film-forming target and a target disposed in a processing chamber supplied with a predetermined gas, A film is formed on a surface of a film formation target by generating plasma between a film formation target and a target disposed at a predetermined position in a processing chamber at a predetermined distance from the film formation target and opposed to each other. By passing predetermined gas particles to be observed to the film formed on the surface of the film formation target and heating the film formation target by the heating means, compared to before heating the film passage amount of the observation target. By detecting the film quality of the film by increasing the amount of the film to be heated and monitoring the amount of the film to be heated and the amount of the object to be observed that passes through the film, the film to be formed is heated when the film is heated. The movement of molecules becomes active and the amount of film passing through the target increases, and the film quality of the film is detected based on the amount of passing. Thus, a sputtering apparatus capable of efficiently forming a film having desired film quality performance can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a film-forming target to which a polymer film used in the present invention is fixed.

FIG. 2 is a schematic diagram showing the configuration of a sputtering apparatus according to the present invention.

FIG. 3 is a schematic sectional view showing a film formation target on which a film is formed.

FIG. 4 is a flowchart illustrating a film forming process performed by a sputtering apparatus.

FIG. 5 is a schematic sectional view showing a configuration of a conventional liquid crystal display device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Sputter apparatus, 2 ... Vacuum chamber, 5 ... Target, 14 ... Control part, 21 ... Gas ring, 30 ...
... coils, 45 ... quadrupole mass spectrometers, 47 ... photosensors, 200 ... plasma light-emitting portions, 201 ... polymer films.

Claims (19)

[Claims] 1. A sputtering method for forming a film on a surface of a film-forming target by generating plasma between the film-forming target and a target disposed in a processing chamber to which a predetermined gas is supplied. An attaching step of attaching the film object to a predetermined attaching object in advance, and a fixing step of fixing the processing object in a state where the film forming object is attached to the attaching object in the attaching step at a predetermined position in the processing chamber. The plasma generated between the film-forming target of the processing target and the target disposed at a predetermined position in the processing chamber at a predetermined distance from the film-forming target and facing each other. A film forming step of forming the film on a surface of a film target. 2. The sputtering method according to claim 1, wherein the object to be formed is a film having elasticity. 3. The sputtering method according to claim 1, wherein, after the film forming step, an observation target passing step of passing predetermined gas particles to be observed through the film formed on the surface of the film formation target. A film quality detection step of detecting a film quality of the film by monitoring a passing amount of the observation object passing through the film formed on the surface of the film formation target. The sputtering method according to 1. 4. The film quality detecting step includes passing the gas particles in the processing chamber through the film by evacuating the processing chamber from the back side of the film forming object through the film forming object. The sputtering method according to claim 3, wherein the sputtering is performed. 5. The film quality detecting step includes: supplying helium gas as the gas particles into the processing chamber, and evacuating the processing chamber from the back side of the film formation target through the film formation target, 5. The sputtering method according to claim 4, wherein the evacuated helium gas is used as the gas particles to monitor the amount of gas passing therethrough. 6. The sputtering method according to claim 3, wherein in the film quality detecting step, the light transmittance of the plasma, which has passed through the film, is monitored using the light emission of the plasma as the observation target. 7. The method according to claim 1, wherein the step of removing the film is performed when the film formed on the surface of the film formation target has a predetermined thickness or more. The sputtering method according to claim 1, further comprising: 8. A sputtering method for forming a film on a surface of a film-forming target by generating plasma between the film-forming target and a target disposed in a processing chamber to which a predetermined gas is supplied. The film is generated on the surface of the film formation target by generating the plasma between the film target and the target disposed at a predetermined position in the processing chamber at a predetermined distance from the film formation target and facing each other. A film-forming step of forming a film, an observation-object passing step of passing predetermined gas particles to be observed to the film formed on the surface of the film-forming object, and heating the film-forming object by heating means. A heating step of increasing a film passing amount of the observation target by heating compared to before the heating, and a heating step of heating the film in the deposition object heating step. A film quality detecting step of detecting a film quality of the film by monitoring a film object and an amount of the observation object passing through the film. 9. The sputtering method according to claim 8, wherein the object to be formed is a film having elasticity. 10. The film quality detecting step includes passing the gas particles in the processing chamber through the film by evacuating the processing chamber from the back side of the film forming object through the film forming object. The sputtering method according to claim 8, wherein the sputtering is performed. 11. The film quality detecting step comprises: supplying a helium gas into the processing chamber, and evacuating the processing chamber from the back side of the film formation target through the film formation target, thereby evacuating the processing chamber. The sputtering method according to claim 10, wherein the passing amount of the helium gas as the gas particles is monitored. 12. The sputtering method according to claim 8, wherein in the film quality detecting step, light emission of the plasma transmitted through the film is monitored and its light transmittance is monitored. 13. The method according to claim 1, wherein, when the film formed on the surface of the film formation target has a film thickness of a predetermined value or more, the film is removed to adjust the film thickness to a desired film thickness. The sputtering method according to claim 8, comprising: 14. A sputtering apparatus for forming a film on the surface of a film-forming target by generating plasma between the film-forming target and a target disposed in a processing chamber to which a predetermined gas is supplied. The film is generated on the surface of the film formation target by generating the plasma between the film target and the target disposed at a predetermined position in the processing chamber at a predetermined distance from the film formation target and facing each other. Film-forming means for forming a film, observation-object passing means for passing predetermined gas particles to be observed to the film formed on the surface of the film-forming object, and heating means for the film-forming object A film-forming target heating means for increasing a passing amount of the film of the observation target through heating compared to before heating, and the film-forming heated by the film-forming target heating means A sputtering apparatus comprising: a film quality detecting unit that detects a film quality of the film by monitoring a passing amount of the object and the observation object that passes through the film. 15. The sputtering apparatus according to claim 14, wherein the object to be formed is a film having elasticity. 16. The film quality detecting means passes the gas particles in the processing chamber through the film by evacuating the inside of the container through the film forming object from the back side of the film forming object. The sputtering apparatus according to claim 14, wherein the sputtering is performed. 17. The film quality detecting means supplies a helium gas into the processing chamber and evacuates the processing chamber from the back side of the film formation target through the film formation target, thereby evacuating the processing chamber. 17. The sputtering apparatus according to claim 16, wherein the helium gas is used as the gas particles and the amount of the gas particles monitored is monitored. 18. The sputtering apparatus according to claim 14, wherein said film quality detecting means monitors the light transmittance of said plasma light transmitted through said film as said observation target. 19. The film removing means, wherein, when the film formed on the surface of the film-forming target has a film thickness of a predetermined value or more, the film is removed to adjust the film to a desired film thickness. 2. The method according to claim 1, further comprising:
5. The sputtering apparatus according to 4.