JP2000183325A - Semiconductor device and formation thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To integrate high-quality semiconductor devices on the same substrate by growing a second semiconductor layer on a first semiconductor device layer, depositing and patterning SiO2 thereon, growing a second semiconductor and a plurality of semiconductors to thereby form a second semiconductor device layer. SOLUTION: A first semiconductor device layer is prepared by forming n-type source and drain regions 11 and p-type source and drain regions 13 on an n-type Si substrate 1. A GaAs layer 2 as a second semiconductor layer is epitaxially grown on the first semiconductor device layer. Next, an SiO2 layer 3 is deposited and patterned, thereby arraying the layer 3. Thereafter, a GaAs layer 4 is epitaxially grown selectively. Further, a clad layer 5, an active layer 6, and a clad layer 7 are epitaxially grown, thereby forming a light-emitting element section B. At the same time, an n-type MOS gate 12 and a p-type MOS gate 14 are formed, thereby forming a Si electronic circuit section A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method for forming the same. More specifically, a plurality of semiconductors having different lattice constants and band gaps are stacked on a semiconductor substrate,
The present invention relates to a semiconductor device in which various semiconductor devices are integrated on the same semiconductor substrate and a method for forming the same.

[0002]

2. Description of the Related Art A semiconductor device manufactured by laminating another semiconductor having a different lattice constant and band gap from a desired semiconductor on a substrate made of a desired semiconductor is required to integrate an electronic device and an optical device, or to use one chip. Attention has been paid to the possibility of realizing a new semiconductor device that could not be realized conventionally, such as a light emitting device that emits polychromatic light. Conventionally, as a technique for integrating an integrated circuit or light-receiving element with Si and a light-emitting element with compound semiconductor, S
A method and a device for heteroepitaxially growing a compound semiconductor on an i-substrate are fabricated by using a compound semiconductor substrate of S
Although a method such as bonding to an i-substrate has been proposed,
A high-quality compound semiconductor layer cannot be obtained due to a difference in lattice constant and a difference in thermal expansion coefficient of the compound semiconductor to be stacked with Si, and has not yet been realized.

[0003] Specifically, for example, Japanese Patent Application Laid-Open No. 6-334168.
Japanese Patent Application Laid-Open Publication No. 2002-214873 proposes a method of selecting and laminating a compound semiconductor composition in consideration of lattice matching and lattice distortion on a Si substrate, and integrating an optical device and an electronic device.

As for the multicolor light-emitting device, a blue light-emitting device has recently been developed using a nitride semiconductor or a II-VI group semiconductor, so that a semiconductor full-color light source in which three primary colors of R, G and B are integrated on the same substrate. Also, proposals for semiconductor white light sources have been actively made. For example, JP-A-7-26375
No. 2 discloses a technique for forming a full-color light-emitting element by laminating a compound semiconductor lattice-matched on a GaAs substrate.

However, a semiconductor device obtained by laminating semiconductors having different characteristics such as band gaps is highly expected as described above. Many defects were generated in the crystal formed due to the difference in thermal expansion coefficient, and a device having good characteristics could not be obtained. In order to solve this problem, there have been proposals to use semiconductor materials whose lattice constant is close to that of the base substrate, or to design devices in consideration of lattice distortion. There is a problem in that it is limited and it is difficult to obtain desired characteristics.

[0006]

SUMMARY OF THE INVENTION An object of the present invention is to stack any semiconductors having different lattice constants and band gaps with good quality and to integrate electronic devices and optical devices having desired characteristics on the same substrate. It is an object of the present invention to provide a semiconductor device in which a multi-color / high-performance light emitting device is integrated on the same substrate.

[0007]

According to a method of forming a semiconductor device according to the present invention, a semiconductor device made of a first semiconductor or a semiconductor lattice-matched to the first semiconductor is formed on a substrate made of the first semiconductor. Forming a first semiconductor device layer having a semiconductor device comprising; and epitaxially growing a second semiconductor layer having a lattice constant different from that of the first semiconductor on the first semiconductor device layer; After depositing and patterning SiO ₂ on the semiconductor layer, the second semiconductor and a plurality of semiconductors including the second semiconductor are further grown at a higher growth rate in the horizontal direction than in the vertical direction with respect to the substrate. Is sufficiently large, and under conditions such that it selectively grows in a portion where the SiO ₂ does not exist,
Forming a second semiconductor device layer by epitaxial growth.

According to the above method, first, as a first semiconductor device layer, a high-quality semiconductor device utilizing characteristics of a substrate made of the first semiconductor or a characteristic of a semiconductor lattice-matched with the first semiconductor is utilized. A high quality semiconductor device can be manufactured. However, the semiconductor device according to the present invention is:
Electronic device or optical device. Next, the second semiconductor layer formed immediately above the first semiconductor or the first semiconductor device layer made of a semiconductor lattice-matched to the first semiconductor has a large number of defects due to lattice mismatch. On the other hand, since the second semiconductor formed on the patterned SiO ₂ is epitaxially grown in the horizontal direction with respect to the substrate, a high-quality crystal with few defects can be obtained. Therefore, a high-quality semiconductor device utilizing characteristics of the second semiconductor, that is, an electronic device or an optical device can be manufactured in the second semiconductor device layer.

Therefore, by using the method according to the present invention, high-quality crystals of all kinds of semiconductors can be successively stacked, so that a plurality of high-quality semiconductor devices having different characteristics are formed on the same substrate. Can be integrated.

According to the above-described method, a semiconductor device having the following configuration can be obtained.

A first semiconductor device according to the present invention comprises a substrate made of a first semiconductor and a first semiconductor device formed on the substrate.
A first semiconductor device layer having a semiconductor device made of the semiconductor of the above, a second semiconductor layer formed on the first semiconductor device layer and having a lattice constant different from that of the first semiconductor, patterned SiO ₂ , And a second semiconductor device layer including a second semiconductor and a plurality of semiconductors including the second semiconductor. According to this configuration, the first type having different characteristics is used.
A semiconductor device in which the semiconductor device of the above and the second semiconductor device are integrated on the same substrate.

In particular, in the first semiconductor device, the substrate made of the first semiconductor is Si, the first semiconductor device layer has an FET formed thereon, and the second semiconductor is III- A light emitting device made of a group III-V compound semiconductor is formed in the second semiconductor device layer in the form of a group V compound semiconductor, whereby an electronic circuit made of Si and light emission made of a group III-V compound semiconductor are formed. A semiconductor device in which elements are integrated on the same substrate is obtained.

[0013] A second semiconductor device according to the present invention includes a substrate made of a first semiconductor and a first semiconductor device formed on the substrate.
A first semiconductor device layer having a semiconductor device made of the semiconductor of the above, a second semiconductor layer formed on the first semiconductor device layer and having a lattice constant different from that of the first semiconductor, patterned SiO ₂ A second semiconductor device layer including a second semiconductor and a plurality of semiconductors including the second semiconductor; and a first and a second semiconductor similar to the second semiconductor device layer. And a plurality of semiconductor device layers composed of semiconductors having different lattice constants. According to this configuration, it is possible to obtain a semiconductor device in which a plurality of semiconductor devices having different characteristics are integrated on the same substrate.

[0014] A third semiconductor device according to the present invention includes a substrate made of a first semiconductor and a first semiconductor device formed on the substrate.
A first semiconductor device layer having a semiconductor device made of a semiconductor lattice-matched with the semiconductor of the first semiconductor device layer, and a second semiconductor layer formed on the first semiconductor device layer and having a different lattice constant from the first semiconductor device; Patterned Si
O ₂ and a second semiconductor device layer including a second semiconductor and a plurality of semiconductors including the second semiconductor are stacked. According to this configuration, it is possible to obtain a semiconductor device in which semiconductor devices having two kinds of characteristics different from those of the substrate made of the first semiconductor are integrated on the same substrate.

In particular, in the third semiconductor device, the substrate made of the first semiconductor is GaAs, and the light emitting device made of GaAs and AlGaAs is formed in the first semiconductor device layer. 2 is GaN, and the second semiconductor device layer has G
By forming at least one or more light emitting devices made of aN, InN, GaInN and AlGaN, GaAs and AlGa are formed on a GaAs substrate.
A semiconductor device is obtained in which a red light emitting element made of As and a green light emitting element and a blue light emitting element made of GaN and GaInN are integrated.

A fourth semiconductor device according to the present invention comprises a substrate made of a first semiconductor and a first semiconductor device formed on the substrate.
A first semiconductor device layer having a semiconductor device made of a semiconductor lattice-matched with the semiconductor of the first semiconductor device layer, and a second semiconductor layer formed on the first semiconductor device layer and having a different lattice constant from the first semiconductor device; Patterned Si
O ₂ , and a second semiconductor device layer including a second semiconductor and a plurality of semiconductors including the second semiconductor, and a second semiconductor device layer similar to the second semiconductor device layer. A plurality of semiconductor device layers composed of semiconductors having different lattice constants from the first and second semiconductors are stacked. According to this configuration, it is possible to obtain a semiconductor device in which a plurality of semiconductor devices having two kinds of characteristics different from those of the substrate made of the first semiconductor are integrated on the same substrate.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device according to the present invention and a method for forming the same will be described with reference to the drawings.

(First Embodiment) A first embodiment according to the present invention will be described with reference to FIGS. (1) First, a GaAs layer 2 is formed on an n-type Si substrate 1 by MOC.
Epitaxial growth of 0.5 to several μm was performed by VD (Metal-Organic Chemical Vaper Diposition) method or CBE (Chemical Beam Epitaxy) method (FIG. 1).

(2) Next, after depositing the SiO ₂ layer 3 (FIG. 2), the SiO ₂ layer 3 is patterned with a width of 100 μm and an interval of 10 μm (FIG. 3).
On the GaAs layer 2, SiO ₂ layers 3 having an equal interval and an equal width were arranged.

(3) Thereafter, the n-type GaAs layer 4 was selectively epitaxially grown only by the MOCVD method or the CBE method only on the portion where the SiO ₂ layer 3 was not present and the GaAs layer 2 was exposed. At this time, the growth rate of GaAs is made such that the growth rate in the horizontal direction with respect to the substrate is sufficiently higher than the growth rate in the vertical direction with respect to the substrate, whereby the structure as shown in FIG. was gotten.

In this structure, under the SiO ₂ layer 3, S
While there were many defects caused by the difference between the lattice constants of i and GaAs, the defects did not propagate to the GaAs growth layer immediately above SiO ₂ above the SiO ₂ layer 3, and a high-quality crystal was obtained.

[0022] (4) Next, the cladding layer 5 made of n-type Al _0.7 Ga _0.3 As, the cladding layer 7 made of undoped Al _{0. 35} Ga _0.65 active layer 6 consisting of As, p-type Al _0.7 Ga _0.3 As sequentially A red LED structure was produced by epitaxial growth by MOCVD or CBE (FIG. 5).

(5) Further, a portion where a Si electronic circuit is to be formed is patterned and etched until the surface of the Si substrate is exposed, and the Si surface is etched using a normal CMOS process.
An OS transistor was manufactured (FIG. 6). In FIG.
11 is an n-type source and drain region, 12 is an n-type MOS gate, 13 is a p-type source and drain region, and 14 is a p-type M
OS gate A is a Si-CMOS circuit unit.

(6) By patterning, etching, and forming electrodes of the LED portion, the Si electronic circuit portion A and the GaAs-AlGaAs are formed on the same substrate as shown in FIG.
The semiconductor device in which the light emitting element portion B was formed was formed.

In the embodiment shown here, the compound semiconductor grown on the Si substrate 1 is InP, GaN or GaP.
The light emitting elements corresponding to various wavelength ranges from infrared to ultraviolet can be formed on the same substrate together with the Si electronic circuit.

(Second Embodiment) A second embodiment according to the present invention will be described with reference to FIGS. (1) First, n-type GaAs is formed on an n-type GaAs substrate 301.
Cladding layer 303 comprising a layer 302, n-type Al _0.7 Ga _0.3 As, epitaxially grown by a non-doped Al _0.35 Ga _0.65 active layer of As 304, p-type Al _0.7 Ga _0.3 sequentially MOCVD method cladding layer 305 of As or CBE method Thus, a red LED structure was manufactured (FIG. 8).

(2) Next, MOCVD or CBE
After the GaN layer 306 was epitaxially grown by the method, an SiO ₂ layer 307 was deposited thereon (FIG. 9).

(3) Further, SiO ₂ deposited on the entire surface
By patterning and etching the layer 307 with a width of about 100 μm and an interval of about 10 μm, Ga
On the N layer 306, SiO ₂ patterns having the same width and the same interval were formed (FIG. 10).

(4) Thereafter, the p-type GaN layer 308 is further formed on the SiO ₂ layer 30 by MOCVD or CBE.
7 was selectively epitaxially grown only in a portion where the GaN layer 306 was exposed. At this time, the growth rate of GaN is set such that the growth rate in the horizontal direction with respect to the substrate is sufficiently higher than the growth rate in the direction perpendicular to the substrate, whereby the structure shown in FIG. was gotten.

[0030] In the lower portion of the SiO ₂ layer 307 in this structure is that the defects caused by the lattice constant difference GaAs and GaN are present in large quantities in the upper part of the SiO ₂ layer 307 S
Defects did not propagate to the GaN layer 308 immediately above iO ₂ , and a high-quality crystal was obtained.

(5) Next, the p-type AlGaN layer 309, p
-Type GaN layer 308, a non-doped Ga having a band gap (2.35 eV) corresponding to a green emission wavelength
Active layer 310 made of InN, n-type GaN layer, n-type Al
A GaN layer, an n-type GaN layer, a non-doped GaInN layer having a band gap (2.7 eV) corresponding to the emission wavelength of blue, a p-type GaN layer, and a p-type AlGaN layer are sequentially epitaxially grown to form a green and blue LED structure. It was produced (FIG. 12).

(6) Further, as shown in FIG. 13, by patterning and etching to form desired electrodes 314 to 318, R, G, B and L of three primary colors are formed on the same substrate.
A light emitting device with an ED was formed.

Such a light source can be used as a full-color display device, and can also be used as a semiconductor white light source by emitting three LEDs simultaneously.

In order to integrate light emitting elements of R, G, B and three primary colors on the same substrate, a GaAs substrate is used, and a red LED of GaAs or AlGaAs system is used as the first device layer.
And a green LED is formed on the second device layer using GaP or InGaP, and GaN or InGaP is formed on the third layer.
It can also be obtained by manufacturing a blue LED based on N and AlGaN.

[0035]

As described above, according to the present invention,
Since a plurality of semiconductors having different lattice constants and band gaps can be laminated with good crystallinity on a semiconductor substrate, a semiconductor device capable of integrating high-quality semiconductor devices utilizing the characteristics of each semiconductor on the same substrate. And a method for forming the same.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a semiconductor device in a first step in a manufacturing process of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic sectional view showing the semiconductor device in a step subsequent to that of FIG. 1;

FIG. 3 is a schematic sectional view showing the semiconductor device in a step subsequent to FIG. 2;

FIG. 4 is a schematic cross-sectional view showing the semiconductor device in a step subsequent to FIG. 3;

FIG. 5 is a schematic sectional view showing the semiconductor device in a step subsequent to that of FIG. 4;

FIG. 6 is a schematic sectional view showing the semiconductor device in a step subsequent to FIG. 5;

FIG. 7 is a schematic sectional view showing the semiconductor device in a step subsequent to that of FIG. 6, and is a schematic sectional view showing the semiconductor device according to the first embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view showing a semiconductor device in an initial step in a manufacturing process of a semiconductor device according to a second embodiment of the present invention.

FIG. 9 is a schematic sectional view showing the semiconductor device in a step subsequent to that of FIG. 8;

FIG. 10 is a schematic sectional view showing the semiconductor device in a step subsequent to that of FIG. 9;

FIG. 11 is a schematic sectional view showing the semiconductor device in a step subsequent to that of FIG. 10;

FIG. 12 is a schematic sectional view showing the semiconductor device in a step subsequent to FIG. 11;

FIG. 13 is a schematic sectional view showing the semiconductor device in a step subsequent to that of FIG. 12, and is a schematic sectional view showing the semiconductor device according to the second embodiment of the present invention.

[Explanation of symbols]

1 n-type Si substrate, 2 GaAs layer, 3 SiO ₂ layer, 4 n-type GaAs layer, 5 n-type AlGaAs cladding layer, 6 AlGaAs active layer, 7 p-type AlGaAs cladding layer, 8 LED electrode (anode), 9 LED electrode (Cathode), 10 p-well, 11 n-type source, drain region, 12 nMOS gate, 13 p-type source, drain region, 14 pMOS gate, A Si-CMOS circuit section, B GaAs-AlGaAs light emitting element section, 301 n-type GaAs substrate, 302 n-type GaAs layer, 303 n-type AlGaAs cladding layer, 304 AlGaAs active layer, 305 p-type AlGaAs cladding layer, 306 GaN layer, 307 SiO ₂ layer, 308 p-type GaN layer, 309 p-type AlGaN layer, 310 GaInN active layer (green), 311 n-type A GaN layer, 312 n-type GaN layer, 313 GaInN active layer (blue), 314 red LED electrode (cathode), 315 red LED electrode (anode), 316 green LED electrode (anode), 317 green LED, blue LED common electrode ( 318) Blue LED electrode (anode).

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahiro Okuda 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 5F041 AA12 CA04 CA12 CA34 CA35 CA36 CA40 CA65 CA67 CB28 CB29 CB33 FF01 FF16

Claims (7)

[Claims] A first semiconductor device layer formed on the substrate, a first semiconductor device layer having a semiconductor device made of the first semiconductor, and a first semiconductor device layer formed on the first semiconductor device layer; A second semiconductor layer having a different lattice constant from the first semiconductor, a patterned SiO ₂ , and a second semiconductor and a second semiconductor layer.
And a second semiconductor device layer composed of a plurality of semiconductors including the semiconductor. 2. The method according to claim 1, wherein the substrate made of the first semiconductor is Si, an FET is formed in the first semiconductor device layer, the second semiconductor is a III-V compound semiconductor, III-V in the second semiconductor device layer
The semiconductor device according to claim 1, wherein a light emitting device is formed by a group III compound semiconductor. 3. A substrate made of a first semiconductor, a first semiconductor device layer having a semiconductor device made of the first semiconductor formed on the substrate, and formed on the first semiconductor device layer A second semiconductor layer having a different lattice constant from the first semiconductor, a patterned SiO ₂ , and a second semiconductor and a second semiconductor layer.
A second semiconductor device layer composed of a plurality of semiconductors including the semiconductor described above, and a semiconductor having a lattice constant different from that of the first and second semiconductors, similar to the second semiconductor device layer. And a plurality of semiconductor device layers. 4. A substrate made of a first semiconductor, a first semiconductor device layer formed on the substrate and having a semiconductor device made of a semiconductor lattice-matched to the first semiconductor, and the first semiconductor A second semiconductor layer formed on the device layer and having a different lattice constant from the first semiconductor, patterned SiO ₂ , and a second semiconductor and a second semiconductor layer;
And a second semiconductor device layer composed of a plurality of semiconductors including the semiconductor. 5. The method according to claim 1, wherein the substrate made of the first semiconductor is GaAs.
s, a light emitting device made of GaAs and AlGaAs is formed on the first semiconductor device layer, and the second semiconductor is GaN, and GaN, InN, GaInN is formed on the second semiconductor device layer. And Al
The semiconductor device according to claim 4, wherein at least one light emitting device made of GaN is formed. 6. A substrate made of a first semiconductor, a first semiconductor device layer formed on the substrate and having a semiconductor device made of a semiconductor lattice-matched to the first semiconductor, and the first semiconductor A second semiconductor layer formed on the device layer and having a different lattice constant from the first semiconductor, patterned SiO ₂ , and a second semiconductor and a second semiconductor layer;
And a second semiconductor device layer composed of a plurality of semiconductors including the above semiconductor, and further have a different lattice constant from the first and second semiconductors, similar to the second semiconductor device layer. A semiconductor device comprising: a plurality of semiconductor device layers formed of a semiconductor; 7. A first semiconductor device layer having a semiconductor device made of the first semiconductor or a semiconductor device made of a semiconductor lattice-matched to the first semiconductor is formed over a substrate made of the first semiconductor. After the step, epitaxially growing a second semiconductor layer having a different lattice constant from the first semiconductor on the first semiconductor device layer, and then depositing and patterning SiO ₂ on the second semiconductor layer, Further, a second semiconductor and a plurality of semiconductors including the second semiconductor are selectively placed in a portion where the growth rate in the horizontal direction is sufficiently higher than the growth rate in the vertical direction with respect to the substrate and where the SiO ₂ is not present. Forming a second semiconductor device layer by epitaxial growth under conditions such that the semiconductor device grows.