JP2000183000A - Manufacture, device and inspection device of semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method, a device and an inspection device for a semiconductor requiring no large-scale measuring device and capable of sensitively detecting the timing when a tantalum nitride film is exposed or a lower film of the tantalum nitride film is exposed. SOLUTION: In a process for manufacturing a semiconductor device by chemical-machine-polishing with the use of a tantalum nitride film, a wafer 22 is performed in CMP with a laser beam radiated from a Raman spectroscope 23 irradiated onto the wafer 22 and a slully switched in response to a Raman peak intensity of 180 to 200 cm2 derived from the bonding of tantalum and nitrogen.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device using a tantalum nitride film, a semiconductor device manufacturing device and an inspection device, and more particularly, to a method of using a tantalum nitride film as a barrier metal and performing chemical mechanical polishing. Pol
The present invention relates to a semiconductor device manufacturing method, a semiconductor device manufacturing apparatus, and an inspection method for forming a via contact or a wiring by CMP.

[0002]

2. Description of the Related Art In recent years, ULSI (Ultralarge Scale Int.)
The use of copper (Cu) as a wiring material for an egrated circuit has been studied. Since copper is difficult to pattern by etching, a wiring pattern and a via contact are formed by a single damascene or dual damascene method. In the damascene method, a via hole or a groove serving as a wiring is formed in an interlayer insulating film, and after covering the interlayer insulating film with a barrier metal, copper is deposited so as to fill the via hole or the groove. Thereafter, the copper film and the barrier metal are polished by CMP until the interlayer insulating film is exposed, and copper is left only in the via hole or the groove to form a via contact or a copper wiring. The barrier metal is formed to prevent Cu from diffusing into the interlayer insulating film, and tantalum nitride or the like is used.

In the damascene method, it is necessary to stop the CMP when the interlayer insulating film is exposed. For this reason,
(1) a friction detection type end point detector that detects a polishing end point by a change in motor load; (2) a vibration detection type end point detector that detects a polishing end point by a change in vibration intensity or frequency;
(3) An optical endpoint detector that detects the polishing endpoint based on the change in the intensity or phase of the reflected or interfering light has been developed ('98 Latest Semiconductor Process Technology, Monthly “Semiconductor World” special issue, p. 305, published by Press Journal, Inc.) ), Used in CMP equipment.

[0004] These end point detectors are used not only for simply detecting the polishing end point, but also as an inspection device (CMP monitor) for monitoring information on the polishing state during CMP in real time and detecting the presence or absence of a polishing abnormality. Can be

[0005] Since copper is easily corroded by the chemical components of the slurry used in CMP, it is necessary to remove the slurry immediately after CMP.

[0006]

The tantalum nitride thin film used as a copper diffusion barrier has a chemical structure of TaN.
It is expressed as x (x = 0.36 to 0.50). A tantalum nitride thin film having a small ratio of N (nitrogen) (that is, a small value of x) has a large selectivity between copper and an interlayer insulating film (for example, a silicon oxide film) or Si (silicon). A general slurry cannot be sufficiently polished by CMP, and an atomic force microscope shown in FIG. 8 is used.
As shown in the AFM image by the scope (hereinafter, referred to as AFM), the uncut portion (the portion which looks whitish and looks like a haze in the figure) occurs. Conversely, the ratio of N is large (that is,
A slurry capable of polishing a tantalum nitride thin film (having a large value of x) has a drawback that the selectivity between copper and the interlayer insulating film or Si is small.

In order to avoid uncut portions and to increase the selectivity between copper, the interlayer insulating film and Si, (1) changing the film quality (composition, phase or orientation, etc.) of the tantalum nitride film; (2) Changing the polishing method or slurry can be considered.

[0008] It has been found by experiments of the present inventors that when the film quality of a tantalum nitride film is changed, the greater the proportion of nitrogen, the easier it is to polish by CMP. However, heretofore, there has been no simple index that simply indicates the ease of CMP. For example,
The crystal phase of the tantalum nitride film is determined by X-ray diffraction analysis (X-ray Diffraction).
raction Analysis (hereinafter, referred to as XRD).
In general, it is extremely difficult to identify a phase because the scatterer is minute and the scattered radiation has a wide width and the film may have orientation.

The composition of the tantalum nitride film is determined by Auger Electron Spectroscopy (AES) and Rutherford Backscattering (Ruth).
erfordBack Scattering spectroscopy: Hereafter, RBS
However, these methods require a high-vacuum apparatus, and thus have the disadvantage that the measuring apparatus itself becomes large.

On the other hand, when the polishing method is to be changed, for example, when the polishing pressure or the type of slurry is changed between when polishing a copper film and when polishing a tantalum nitride film, it is difficult to use a polishing metal. Since the thickness of the tantalum nitride film to be formed is as small as about 10 nm, it is necessary to sharply detect the polishing end point of the copper film, that is, the time point at which the tantalum nitride film is exposed. However, conventionally, a detector that sharply detects the point in time when the tantalum nitride film is exposed has not been developed.

From the above, it is an object of the present invention to provide a semiconductor device which does not require a large-scale measuring device and which can sharply detect when a tantalum nitride film is exposed or when a film below a tantalum nitride film is exposed. An object of the present invention is to provide a device manufacturing method, a manufacturing device, and an inspection device thereof.

[0012]

An object of the present invention is to provide a semiconductor device having a step of forming a second film made of another material on a first film made of tantalum nitride and polishing the second film. Wherein the Raman peak at 180 to 200 cm ^-1 originating from the bond between tantalum and nitrogen in the first film is detected, and the polishing state is determined based on the intensity thereof. Solved by the method.

[0013] Further, the above object is to cover an insulating film provided with holes or grooves with a tantalum nitride film and form a copper film thereon, and to perform chemical mechanical polishing on the copper film to form the tantalum nitride film. Exposing a film, wherein the tantalum nitride film has a thickness of 180 to 20 due to a bond between nitrogen and nitrogen.
A Raman peak at 0 cm ^-1 is detected, and the point at which the intensity of the Raman peak becomes higher than a predetermined value is determined as the polishing end point of the copper film.

[0014] Further, the above object is to cover an insulating film provided with holes or grooves with a tantalum nitride film and to form a copper film thereon, and to perform chemical mechanical polishing of the copper film to form the tantalum nitride film. And a step of polishing the tantalum nitride film to expose the insulating film, and detecting a Raman peak at 180 to 200 cm ⁻¹ resulting from a bond between tantalum and nitrogen of the tantalum nitride film. However, the problem is solved by a method of manufacturing a semiconductor device, characterized in that the point at which the intensity of the Raman peak becomes smaller than a certain value is the polishing end point of the tantalum nitride film.

Still another object of the present invention is to provide a polishing head for mounting a wafer, a surface plate on which a polishing cloth for polishing the wafer is mounted, a rotating means for rotating at least one of the polishing head and the surface plate, A Raman spectrometer for irradiating the wafer with laser light to detect a Raman peak at 180 to 200 cm ^-1 , and a control unit for controlling the rotating unit according to an output of the Raman spectrometer. The problem is solved by a semiconductor device manufacturing apparatus.

Still another object of the present invention is to provide a polishing head for mounting a wafer, a surface plate on which a polishing cloth for polishing the wafer is mounted, a rotating means for rotating at least one of the polishing head and the surface plate, A Raman spectrometer for irradiating the wafer with a laser beam to detect a Raman peak of 180 to 200 cm ^-1 , and a laser beam scanning unit for scanning a laser beam output from the Raman spectrometer in a radial direction of the wafer. The problem is solved by a semiconductor device inspection device characterized by having the above.

In the present invention, copper means a copper alloy in addition to pure copper.

Hereinafter, the operation of the present invention will be described.

The present inventors measured the Raman spectrum of a tantalum nitride film formed by a reactive sputtering apparatus using a Raman spectrum measuring apparatus.

As shown in FIG. 2, the Raman spectrum measuring apparatus includes an XYZ fine movement stage 2 on which a sample 1 is mounted.
And a lens barrel 4 to which an objective lens 3, a beam splitter 5, and an eyepiece 6 are fixed, a monitor 7, a video camera 8, a holographic notch filter 9, a reflecting mirror 10, and an Ar (argon) ion laser 11. , A spectroscope 12 and a cooled CCD detector 13.

The light output from the laser 11 is reflected by the reflecting mirror 1.
0, reflected by the holographic notch filter 9 and the beam splitter 5 and passed through the objective lens 3 to XYZ
The sample 1 placed on the fine movement stage 2 is irradiated. The laser light reflected by the sample 1 and the Raman scattered light generated by the sample 1 are transmitted through the objective lens 3 to the beam splitter 5.
, And is split into light that passes through the beam splitter 5 and light that is reflected by the beam splitter 5.

The light transmitted through the beam splitter 5 enters a video camera 8 via an eyepiece 6 and an image is displayed on a monitor 7. The light reflected by the beam splitter 5 passes through the holographic notch filter 9, enters the spectroscope 12, and is detected by the cooled CCD detector 13.

[0023] Raman spectrum measuring apparatus constructed as described above was measured for Raman spectrum of a tantalum nitride film with a (hereinafter, also referred to as Raman spectroscopy device), as shown in FIG. 1, the Raman shift 180cm ^-1 A sharp Raman line with a peak (indicated by the arrow in FIG. 1) was found. As shown in Table 1 below, it was found that a sample having a higher nitrogen ratio had a higher peak intensity, and a sample having a higher (larger) peak intensity was easier to be polished by CMP. However, in Table 1, the average composition of the film was A
It is an atomic number ratio measured by ES.

[0024]

[Table 1]

In addition, a transmission electron microscope (Transmission Ele)
From observation using a ctron microscope (hereinafter referred to as TEM), it was found that the maximum peak at 180 cm ^-1 was caused by microcrystals of Ta ₂ N.

FIG. 3 shows the results of measuring the Raman spectrum of a tantalum nitride film formed using a reactive sputtering apparatus while changing only the nitrogen partial pressure.

A sample (N ₂ = 30%) formed in an atmosphere of Ar: N ₂ = 7: 3 was analyzed by XRD to obtain a Ta.
Identified as ₂ N phase, the sample has a Raman peak at 180cm ^-1.

A sample (N ₂ = 40%) formed in an atmosphere of Ar: N ₂ = 6: 4 shows a broad XRD spectrum and cannot be identified by a single phase.
(centered cubic lattice, face-centered cubic lattice) -It is presumed to contain a TaN phase. This sample has a strong Raman peak at 180 cm ^{-1 due} to Ta ₂ N. In addition,
The presence of Ta ₂ N was also confirmed by TEM. fcc-TaN
The phase has been found to have no Raman-active lattice vibrations due to the symmetry of the crystal.

Further, a sample (N ₂ = 60%) formed in an atmosphere having a large amount of nitrogen such as Ar: N ₂ = 4: 6 is 200 cm ^−1.
Showed a stronger Raman peak. This sample is
Was identified as hexagonal-TaN (hexagonal TaN).

From the above analysis result, it was found that^-1And 2
00cm^-1The peak that appears at _TwoN and hexagonal-
It is presumed to reflect the Ta-N bond of the TaN crystal.
You.

From the above analysis results, the TEM and Raman spectrum (Raman peak) measurement results are summarized for the dependence of the tantalum nitride film quality on the nitrogen flow ratio, as shown in Table 2 below.
Shown in

[0032]

[Table 2]

In general, it has been reported that when a tantalum nitride film is formed by a reactive sputtering apparatus, the phases appear in the following order when the nitrogen flow rate is gradually increased from zero. Bcc is the body-centered cubic lattice (body
centered cubic lattice).

Β-Ta → bcc-Ta (N) → Ta
₂ N → fcc-TaN these phases have been identified primarily XRD. There are reports suggesting that adjacent phases coexist and that there is a possibility of including phases other than those described above, but the detailed identification as described above was made for the first time by the present inventors.

As described above, the tantalum nitride crystal component in the thin film can be detected by using the Raman peak (180 cm ^{-1 to} 200 cm ^-1 ) derived from the Ta-N bond. Since the copper (Cu) film does not have a Raman peak in the vicinity of the above range, the end of polishing of the copper (Cu) film on tantalum nitride can be detected sharply by detecting the Raman peak. become.

Further, as shown in Table 1, the Ta-N bond
Raman peak (180cm ^-1~ 200cm^-1)
Tantalum nitride film under the same polishing conditions as copper film
It is now possible to determine the ease of polishing during CMP
Become.

[0037]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

(First Embodiment) FIG. 4 shows a first embodiment of the present invention.
FIG. 5 is a schematic diagram showing a configuration of a semiconductor device manufacturing apparatus (CMP polishing apparatus) according to the embodiment, and FIG. 5 is a schematic view showing a main part of the semiconductor device manufacturing apparatus when viewed from above.

The wafer 22 is mounted on the polishing head 21 and is rotated (clockwise when viewed from above) by the motor 18. A polishing cloth 26 is mounted on the surface plate 16. The platen 16 is also rotated by the motor 17 (to the right when viewed from above). A hole 24 is provided in the surface plate 16, and the optical fiber 20 is mounted in the hole 24. The optical fiber 20 is connected to a Raman spectroscopy device 23, irradiates the surface of the wafer 22 with laser light output from the Raman spectroscopy device 23, and transmits light scattered by the wafer 22 to the Raman spectroscopy device 23. The result analyzed by the Raman spectroscope 23 is transmitted to a computer 25.
Is input to

In the present embodiment, the different compositions 2
Use different types of slurries. These slurries are contained in slurry tanks 14 and 15 and solenoid valves 28 and
The liquid is dropped on the polishing pad 26 through the pad 29. Solenoid valve 2
8 and 29 are individually controlled by a slurry control signal 19 output from the computer 25.

Hereinafter, a method for manufacturing a semiconductor device using the above-described polishing apparatus will be described. However, here, it is assumed that the slurry tank 14 contains a slurry for polishing a copper film, and the slurry tank 15 contains a slurry for polishing a tantalum nitride film.

FIG. 9 is a sectional view showing an example of the wafer 22. In the wafer 22, a copper wiring 33 is formed on a wafer substrate 32. An interlayer insulating film is formed so as to cover the copper wiring 33.
Then, via holes 36 (or grooves) are selectively formed. Then, the interlayer insulating film 34 is covered with a tantalum nitride film 35 as a barrier metal. After that, a copper film 37 is formed on the tantalum nitride film 35 so as to fill the via holes 36.

The wafer 22 thus formed is mounted on the polishing head 21 with the copper film 37 side down. Then, when polishing is started, the computer 25 outputs the slurry control signal 19 to open the electromagnetic valve 28 and the electromagnetic valve 29
To “close”. Thus, the drop of the slurry for copper polishing from the slurry tank 14 onto the polishing pad 26 is started. The computer 25 instructs the motor 17 and the motor 18 to start rotation. This allows motor 1
7 and the motor 18 rotate, and the copper film 37 on the surface of the wafer 22 is polished. On the other hand, Raman spectroscopy device 23 irradiates a laser beam on the surface of the wafer 22 through the optical fiber 20, to monitor the Raman peak intensity of 180cm ^-1 ~200cm ^-1.

[0044] Immediately after starting polishing, since the tantalum nitride film 35 is covered with the copper film 37, 180cm ^-1 ~200cm
^No Raman shift peak of ^-1 is detected. However, when the copper film 37 is polished and the tantalum nitride film 35 is exposed,
Peak of the Raman shift of 180cm ^-1 ~200cm ^-1 increases, exceeds a predetermined set value. Thereby, the Raman spectroscopy device 23 outputs a signal indicating that the Raman peak has increased to the computer.

The computer 25 includes a Raman spectrometer 23
When the peak of 180cm ^-1 ~200cm ^-1 inputs a signal indicating that increased from the slurry control signal 19
And the solenoid valve 28 is closed, and the solenoid valve 29 is opened. Thus, the dropping of the slurry from the slurry tank 14 is stopped, and the slurry for polishing the tantalum nitride film is dropped from the slurry tank 15. And
With this slurry, the tantalum nitride film 35 is polished. The polishing pressure (the pressure for pressing the wafer 22 toward the polishing cloth 26) may be changed as necessary.

[0046] When the tantalum nitride film 35 is polished interlayer insulation film 34 is exposed, reduces the peak of the Raman shift of 180cm ^-1 ~200cm ^-1, a signal indicating a decrease in the peak from the Raman spectrometer 23 is output . Computer 2
5 is 180 cm ^{-1 to} 200 cm from the Raman spectrometer 23
^When a signal indicating a decrease in the peak of the Raman shift of ^-1 is input, the rotation of the motor 17 and the motor 18 is stopped, and a slurry control signal 19 is output to output the electromagnetic valves 28,
29 are all "closed". In addition, the operator is notified that polishing has been completed by, for example, generating an alarm.

[0047] In this embodiment, the Raman spectroscopic device 23 monitors the peak of the Raman shift of 180cm ^-1 ~200cm ^-1, and detects the polishing end point of the polishing endpoint, and tantalum nitride film of the copper film, Using a slurry suitable for the copper film and the tantalum nitride film, the supply of the slurry can be switched at an appropriate time. Thereby, the copper film and the tantalum nitride film can be appropriately polished,
Residual scraping, insufficient polishing and excessive polishing are avoided.

In the above embodiment, the optical fiber 2
Although the case where 0 is fixed to the base 16 has been described, the optical fiber 20 may be arranged below the base 16. In this case, each time the platen 16 rotates once, the platen 1
The wafer 22 is irradiated with a laser beam through the hole 24 provided in 6, and the peak of Raman scattering can be monitored.

(Second Embodiment) FIG. 6 shows a second embodiment of the present invention.
FIG. 7 is a schematic diagram showing a configuration of a semiconductor device manufacturing apparatus (CMP polishing apparatus) according to the third embodiment, and FIG. 7 is a schematic view showing a main part of the semiconductor device manufacturing apparatus when viewed from above. 6 and 7, the same components as those in FIGS. 4 and 5 are denoted by the same reference numerals, and a detailed description thereof will be omitted.

In the present embodiment, the platen 16 is provided with a rectangular hole 24 a extending in the radial direction of the platen 16. The tip of the optical fiber 20 is attached to a support plate 30, and the support plate 30
1 allows the platen 16 to move in the radial direction. The support plate driving device 31 is also controlled by the computer 25.

In the present embodiment, similarly to the first embodiment, the surface of the wafer 22 is irradiated with the laser light output from the Raman
The peak of the Raman shift of 80cm ^-1 ~200cm ^-1 monitored by Raman spectroscopy device 23. At this time, the driving device 31
As a result, the tip of the optical fiber 20 is scanned in the radial direction of the platen 16, that is, reciprocated. Accordingly, Raman scattering can be measured over the entire surface of the wafer 22, and an in-plane distribution such as uneven shaving or unsharpened portion can be inspected. That is, the CMP polishing apparatus of the present embodiment can be used as an inspection apparatus for knowing the surface state of the semiconductor wafer 22.

[0052] Further, in the present embodiment, 180cm ^-1 ~200cm ^-1 detected by Raman spectroscopy device 23
As in the first embodiment, the polishing end point of the copper film and the polishing end point of the tantalum nitride film are detected based on the peak intensity of the Raman shift to control the electromagnetic valves 28 and 29 to polish the copper film. The type of slurry dropped on the polishing pad 26 is changed depending on when and when the tantalum nitride film is polished. As a result, similarly to the first embodiment, the copper film and the tantalum nitride film can be appropriately polished, and an effect is obtained that unremoved portions, insufficient polishing and excessive polishing are avoided.

[0053]

According to the method of manufacturing a semiconductor device of the present invention.
180cm from Ta-N bond ^-1~ 200cm
^-1Of tantalum nitride crystals using Raman peaks in water
Therefore, polishing of the copper film etc. formed on the tantalum nitride film is completed.
The end point can be detected sharply. This allows
When polishing copper film and when polishing tantalum nitride film
Use slurries with different components for
Legs and excessive polishing can be prevented.

Further, according to the apparatus for manufacturing a semiconductor device of the present invention, since a Raman spectrometer for detecting a Raman peak at 180 to 200 cm ^-1 is provided, it is possible to form a copper film or the like formed on a tantalum nitride film. The polishing end point or the polishing end point of the tantalum nitride film can be detected sharply.

Further, according to the inspection apparatus of the present invention, 180
A Raman spectrometer for detecting a Raman peak of about 200 cm ^-1 and a scanning means for scanning the laser beam output from the Raman spectrometer in the radial direction of the wafer; The distribution within can be examined.

[Brief description of the drawings]

FIG. 1 is a diagram showing a Raman spectrum of a tantalum nitride film.

FIG. 2 is a schematic diagram showing a Raman spectrum measuring device.

FIG. 3 is a diagram showing a Raman spectrum of a tantalum nitride film formed by changing a nitrogen flow rate.

FIG. 4 is a schematic diagram showing a semiconductor device manufacturing apparatus (CMP apparatus) according to the first embodiment of the present invention.

FIG. 5 is a diagram showing a main part when the manufacturing apparatus of FIG. 4 is viewed from above.

FIG. 6 is a schematic diagram illustrating a semiconductor device manufacturing apparatus (CMP apparatus) according to a second embodiment of the present invention.

FIG. 7 is a diagram showing a main part when the manufacturing apparatus of FIG. 6 is viewed from above.

FIG. 8 is an AFM showing tantalum nitride remaining by CMP.
It is a figure showing an image.

FIG. 9 is a cross-sectional view illustrating an example of a wafer to be subjected to CMP.

[Explanation of symbols]

 1 sample, 2 XYZ fine movement stage, 3 objective lens, 4 lens barrel, 5 beam splitter, 6 eyepiece, 7 monitor, 8 video camera, 9 holographic notch filter, 10 reflecting mirror, 11 Ar ion laser, Reference Signs List 12 spectrometer, 13 cooled CCD detector, 14, 15 slurry tank, 16 surface plate, 17, 18 motor, 19 slurry control signal, 20 optical fiber, 21 polishing head, 22 wafer, 23 Raman spectrometer, 25 computer, 26 polishing Cloth, 28,29 solenoid valve, 30 support plate, 31 support plate drive, 32 wafer substrate, 33 copper wiring, 34 interlayer insulating film, 35 tantalum nitride film, 37 copper film.

Claims (6)

[Claims] 1. A method for manufacturing a semiconductor device, comprising: forming a second film made of another material on a first film made of tantalum nitride, and polishing the second film. 18 derived from the combination of tantalum and nitrogen in the membrane
A method for manufacturing a semiconductor device, comprising detecting a Raman peak of 0 to 200 cm ^-1 and determining a polishing state based on the intensity. 2. A step of covering an insulating film provided with holes or grooves with a tantalum nitride film and forming a copper film thereon, and a step of exposing the tantalum nitride film by chemical mechanical polishing of the copper film. And detecting a Raman peak of 180 to 200 cm ^-1 derived from the bond between tantalum and nitrogen of the tantalum nitride film. When the intensity of the Raman peak becomes larger than a certain value, the copper film is detected. A method of manufacturing a semiconductor device, wherein the polishing is performed at a polishing end point. 3. A step of covering an insulating film provided with holes or grooves with a tantalum nitride film and forming a copper film thereon, and exposing the tantalum nitride film by chemical mechanical polishing of the copper film. Polishing the tantalum nitride film to expose the insulating film, and detecting a Raman peak at 180 to 200 cm ⁻¹ derived from a bond between tantalum and nitrogen of the tantalum nitride film, A method of manufacturing a semiconductor device, wherein a point at which a peak intensity becomes smaller than a predetermined value is an end point of polishing the tantalum nitride film. 4. A polishing head for mounting a wafer, a surface plate on which a polishing cloth for polishing the wafer is mounted, rotating means for rotating at least one of the polishing head and the surface plate, and applying a laser beam to the wafer. Irradiate 180-200
An apparatus for manufacturing a semiconductor device, comprising: a Raman spectrometer for detecting a Raman peak at cm ^-1 ; and control means for controlling the rotating means in accordance with an output of the Raman spectrometer. 5. A polishing apparatus, comprising: a first slurry dropping unit for dropping a first slurry on the polishing cloth; and a second slurry dropping unit for dropping a second slurry on the polishing cloth, The control means controls the first slurry dropping means to drop the first slurry on the polishing cloth, and the Raman peak of 180 to 200 cm ^-1 detected by the Raman spectrometer exceeds a certain value. 5. The apparatus for manufacturing a semiconductor device according to claim 4, wherein said second slurry is dropped on said polishing pad by controlling said second slurry dropping means. 6. A polishing head for mounting a wafer, a surface plate on which a polishing cloth for polishing the wafer is mounted, rotating means for rotating at least one of the polishing head and the surface plate, and applying a laser beam to the wafer. Irradiate 180-200
a Raman spectrometer for detecting a Raman peak of cm ^-1 , and a laser beam scanning unit for scanning a laser beam outputted from the Raman spectrometer in a radial direction of the wafer, wherein the inspection device for a semiconductor device is provided. .