JP2000182782A - Organic light emitting element - Google Patents
Organic light emitting elementInfo
- Publication number
- JP2000182782A JP2000182782A JP35712298A JP35712298A JP2000182782A JP 2000182782 A JP2000182782 A JP 2000182782A JP 35712298 A JP35712298 A JP 35712298A JP 35712298 A JP35712298 A JP 35712298A JP 2000182782 A JP2000182782 A JP 2000182782A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- metal electrode
- organic light
- injection layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 238000002347 injection Methods 0.000 claims abstract description 28
- 239000007924 injection Substances 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 13
- 150000002894 organic compounds Chemical class 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 10
- 239000010409 thin film Substances 0.000 abstract description 7
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 abstract description 5
- 229910001634 calcium fluoride Inorganic materials 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 238000003475 lamination Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、有機化合物の積
層構成からなる有機発光素子に関する。The present invention relates to an organic light emitting device having a laminated structure of an organic compound.
【０００２】[0002]
【従来の技術】図１０は有機発光素子の一例を示す簡略
図である。図示するように、この有機発光素子は、ＩＴ
Ｏ１１を薄膜形成したガラス基板１０の上に、ホ−ル注
入層１２、ホ−ル輸送層１３、発光層１４、電子注入層
１５、金属電極１６が順次薄膜形成された積層構成とな
っている。2. Description of the Related Art FIG. 10 is a simplified diagram showing an example of an organic light emitting device. As shown in the figure, this organic light-emitting device has an IT
A hole injection layer 12, a hole transport layer 13, a light-emitting layer 14, an electron injection layer 15, and a metal electrode 16 are laminated on a glass substrate 10 on which a thin film of O11 is formed. .
【０００３】また、ＩＴＯ１１はインジウムすず酸化物
で膜形成された陽極側の透明電極で、発光層１４の発光
を高い光透過率で取り出すことができる。さらに、金属
電極１６はＭｇ（マグネシウム）とＡｇ（銀）とを蒸着
によって膜形成した陰極側の電極であり、この金属電極
１６はＭｇとＡｇとを別々の蒸着源によって同時に蒸着
し薄膜形成される。[0003] The ITO 11 is a transparent electrode on the anode side formed of indium tin oxide, and can emit light from the light emitting layer 14 with high light transmittance. Further, the metal electrode 16 is a cathode-side electrode in which Mg (magnesium) and Ag (silver) are formed by vapor deposition, and the metal electrode 16 is formed by depositing Mg and Ag simultaneously by separate vapor deposition sources and forming a thin film. You.
【０００４】上記した有機発光素子は、ＩＴＯ１１と金
属電極１６とに直流電圧を印加することにより、ＩＴＯ
１１から注入されるホ−ルがホ−ル注入層１２、ホ−ル
輸送層１３を経て発光層１４に送られる。また、金属電
極１６から注入される電子が電子注入層１５を経て発光
層１４に送られる。発光層１４ではホ−ルと電子とを再
結合させ、この再結合によって電気−光変換が行なわ
れ、その発光がＩＴＯ１１側より射出される。[0004] The above-mentioned organic light-emitting device is constructed by applying a DC voltage to the ITO 11 and the metal electrode 16 to thereby form the ITO.
The hole injected from 11 is sent to the light emitting layer 14 via the hole injection layer 12 and the hole transport layer 13. Further, electrons injected from the metal electrode 16 are sent to the light emitting layer 14 via the electron injection layer 15. In the light emitting layer 14, the hole and the electron are recombined, and the recombination performs an electro-optical conversion, and the light emission is emitted from the ITO 11 side.
【０００５】その他の有機発光素子としては、発光層１
４が電子注入層１５を兼ねるように構成されたもの、ま
た、ホ−ル注入層１２がホ−ル輸送層１３を兼ねる構成
のものなどがある。[0005] Other organic light emitting devices include a light emitting layer 1
There is a structure in which the electron injection layer 4 also functions as the electron injection layer 15, and a structure in which the hole injection layer 12 also functions as the hole transport layer 13.
【０００６】[0006]
【発明が解決しようとする課題】金属電極１６をＭｇ、
Ａｇによって膜形成した上記の有機発光素子は、ドット
マトリックスを作製すると、クロスト−クが生ずると言
う素子の機能上の問題がある。これは、金属電極１６に
プラス、ＩＴＯ１１にマイナスの電圧をかけたときに流
れる電流、いわゆる逆バイアス電流が多いためである。The metal electrode 16 is made of Mg,
The organic light-emitting device formed of Ag as a film has a functional problem that a crosstalk occurs when a dot matrix is formed. This is because a large amount of current flows when a plus voltage is applied to the metal electrode 16 and a minus voltage is applied to the ITO 11, that is, a so-called reverse bias current.
【０００７】また、このような有機発光素子は、Ｍｇ、
Ａｇなどの２種類の金属を、その比率を調整しながら蒸
着し、金属電極１６として膜形成するため、金属電極１
６の膜形成が難しく、その結果、発光素子の生産とコス
トの面で不利となっている。In addition, such an organic light emitting device includes Mg,
In order to form a film as the metal electrode 16 by depositing two kinds of metals such as Ag while adjusting the ratio thereof,
6 is difficult to form, which is disadvantageous in terms of the production and cost of the light emitting device.
【０００８】本発明は上記した実情にかんがみ、逆バイ
アス電流を可能なるかぎり少なくすると共に、金属電極
の膜形成を容易にした有機発光素子を提案することを目
的とする。In view of the above circumstances, an object of the present invention is to propose an organic light emitting device in which a reverse bias current is reduced as much as possible and a metal electrode film is easily formed.
【０００９】[0009]
【課題を解決するための手段】上記した目的を達成する
ため、本発明は、有機化合物の積層構成からなる少なく
ともホ−ル注入層、発光層、電子注入層を有する有機発
光素子に関する。そして、この発明では、電子注入層に
ＣａＦ２（ふっ化カルシウム）とＡｌ（アルミニウム）
を使用した金属電極を備えた構成となっている。In order to achieve the above object, the present invention relates to an organic light-emitting device having at least a hole injection layer, a light-emitting layer, and an electron injection layer having a laminated structure of an organic compound. In the present invention, the electron injection layer includes CaF 2 (calcium fluoride) and Al (aluminum).
And a metal electrode using the same.
【００１０】[0010]
【作用】この発明の有機発光素子は、電子注入層にＣａ
Ｆ２とＡｌを蒸着して金属電極を膜形成する。この場
合、ＣａＦ２を蒸着した後にＡｌを蒸着するようにし
て、これらの金属ＣａＦ２とＡｌを別々に蒸着する。According to the organic light emitting device of the present invention, the electron injection layer contains Ca
A metal electrode forming a film by depositing F 2 and Al. In this case, so as to deposit Al after depositing a CaF 2, depositing these metals CaF 2 and Al separately.
【００１１】これにより、従来例で示した有機発光素子
の金属電極のようなＭｇとＡｇの比率を調整しながら蒸
着成膜すると言う難しい作業を必要とせずに、容易に金
属電極を備えることができる。Thus, it is possible to easily provide a metal electrode without the need for a difficult operation of depositing a film while adjusting the ratio of Mg and Ag as in the case of the metal electrode of the organic light emitting element shown in the conventional example. it can.
【００１２】また、金属電極にＣａＦ２とＡｌを使用す
ることにより、逆バイアス電流を極力減少させることが
できる。なお、ＣａＦ２とＡｌを使用した金属電極とし
ても素子特性については従来の有機発光素子に比べほと
んど変わらない。Further, by using CaF 2 and Al for the metal electrode, the reverse bias current can be reduced as much as possible. Note that the device characteristics of a metal electrode using CaF 2 and Al are almost the same as those of a conventional organic light-emitting device.
【００１３】[0013]
【発明の実施の形態】次に、本発明の一実施形態につい
て図面に沿って説明する。図１は一実施形態として示し
た有機発光素子の簡略図で、陽極電極であるＩＴＯ２１
を薄膜形成したガラス基板２０の上に、ホ−ル注入層２
２、ホ−ル輸送層２３、発光層２４、電子注入層２５、
金属電極２６を順次薄膜形成し積層構造としてある。Next, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a simplified diagram of an organic light emitting device shown as one embodiment, in which ITO 21 as an anode electrode is used.
A hole injection layer 2 is formed on a glass substrate 20 on which a thin film is formed.
2, a hole transport layer 23, a light emitting layer 24, an electron injection layer 25,
The metal electrodes 26 are sequentially formed into a thin film to form a laminated structure.
【００１４】また、ホ−ル注入層２２にはＴＰＤ、発光
層２４と電子輸送層兼用の電子注入層２５にはＡｌＱ３
の有機化合物が使用してある。図２、図３にはそれらの
化合物の分子構造を示す。なお、ＴＰＤは、N,N'-diphe
nyl-N,N'-bis(3-methyl phenyl)-[1,1'-biphenyl]-4,
4'-diamineであり、Ａｌｇ３は、Tris(8-hydroxyquinol
inato)Aluminum（トリス（８ヒドロキシキノリナト）ア
ルミニウム）である。The hole injection layer 22 is made of TPD, and the light emitting layer 24 and the electron injection layer 25 also serving as an electron transport layer are made of AlQ 3.
Organic compounds are used. 2 and 3 show the molecular structures of these compounds. TPD is N, N'-diphe
nyl-N, N'-bis (3-methyl phenyl)-[1,1'-biphenyl] -4,
4'-diamine, Alg 3 is Tris (8-hydroxyquinol
inato) Aluminum (tris (8-hydroxyquinolinato) aluminum).
【００１５】そして、この有機発光素子は、電子注入層
２５にＣａＦ２（ふっ化カルシウム）とＡｌ（アルミニ
ウム）を蒸着して薄膜形成した金属電極２６となってい
る。本実施形態では、ＣａＦ２を蒸着し、その膜厚を６
オングストロ−ムに形成した後に、Ａｌを蒸着し、その
膜厚を１５００オングストロ−ムに形成した金属電極２
６となっている。The organic light emitting element is a metal electrode 26 formed by depositing CaF 2 (calcium fluoride) and Al (aluminum) on the electron injection layer 25 to form a thin film. In the present embodiment, CaF 2 is vapor-deposited,
A metal electrode 2 having a thickness of 1500 angstroms, and then having a thickness of 1500 angstroms.
It is 6.
【００１６】なお、上記した金属電極２６は、ＣａＦ２
を２〜１０００オングストロ−ムの範囲内で膜形成した
後、Ａｌを５００〜１００００オングストロ−ムの範囲
内で膜形成することにより実施することが可能である。The above-mentioned metal electrode 26 is made of CaF 2
Can be carried out by forming a film within the range of 2 to 1000 angstroms, and then forming a film of Al within the range of 500 to 10000 angstroms.
【００１７】このように構成た有機発光素子は、ＣａＦ
２を蒸着した後に、Ａｌを所定の膜厚まで蒸着して金属
電極を構成することから、金属電極２６の構成が極めて
容易となる。The organic light-emitting device having the above-described structure is composed of CaF
Since the metal electrode is formed by vapor-depositing Al to a predetermined thickness after vapor-depositing No. 2 , the configuration of the metal electrode 26 becomes extremely easy.
【００１８】また、金属電極２６をＣａＦ２とＡｌによ
って形成することによって、逆バイアス電流を充分に減
少させることができる。図４はＩＴＯ２１をマイナス、
金属電極２６をプラスとして直流電圧を印加し、逆バ
イアス電流を測定した測定結果を示す電圧−電流曲線で
ある。Further, by forming the metal electrode 26 from CaF 2 and Al, the reverse bias current can be sufficiently reduced. Fig. 4 is minus ITO21,
6 is a voltage-current curve showing a measurement result obtained by measuring a reverse bias current by applying a DC voltage with the metal electrode 26 as a plus.
【００１９】なお、実線ＡはＣａＦ２、Ａｌを金属電極
２６とした本実施形態の有機発光素子の特性を示し、一
点鎖線ＢはＭｇ、Ａｇを金属電極１６とした従来の有機
発光素子の特性を示す。この特性図から分かるように、
本実施形態によれば、逆バイアス電圧０〜２０Ｖの範囲
で逆バイアス電流が極めて少ない有機発光素子となる。The solid line A shows the characteristics of the organic light emitting device of this embodiment in which CaF 2 and Al are used as the metal electrode 26, and the dashed line B shows the characteristics of the conventional organic light emitting device in which Mg and Ag are used as the metal electrode 16. Is shown. As can be seen from this characteristic diagram,
According to the present embodiment, an organic light emitting device having a very small reverse bias current in the range of a reverse bias voltage of 0 to 20 V is provided.
【００２０】また、この測定では、有機発光素子の各特
性についても測定した。ＣａＦ２、Ａｌの金属電極２６
を備える本実施形態の有機発光素子とＭａ、Ａｇの金属
電極１６を備える従来の有機発光素子とは大差がないこ
とが確認された。In this measurement, each characteristic of the organic light emitting device was also measured. CaF 2 , Al metal electrode 26
It has been confirmed that there is no significant difference between the organic light emitting device of the present embodiment including the above and the conventional organic light emitting device including the Ma and Ag metal electrodes 16.
【００２１】図５は電圧−電流曲線、図６は電流−輝度
曲線、図７は電圧−輝度曲線、図８は電圧−効率曲線、
図９は輝度−効率曲線を示す。なお、これら曲線におい
てＡは本実施形態の有機発光素子の特性を、Ｂは従来例
の有機発光素子の特性を各々示す。これらの特性図から
分かるように、本実施形態の有機発光素子と従来例の有
機発光素子との各特性は大きく変わらないことが分かっ
た。5 is a voltage-current curve, FIG. 6 is a current-luminance curve, FIG. 7 is a voltage-luminance curve, FIG. 8 is a voltage-efficiency curve,
FIG. 9 shows a luminance-efficiency curve. In these curves, A indicates the characteristics of the organic light emitting device of the present embodiment, and B indicates the characteristics of the organic light emitting device of the conventional example. As can be seen from these characteristic diagrams, it was found that the respective characteristics of the organic light emitting device of the present embodiment and the organic light emitting device of the conventional example were not significantly different.
【００２２】以上、一実施形態について説明したが、電
子輸送層を設けた発光素子やホ−ル注入層２２がホ−ル
輸送層２３を兼ねた発光素子等についても同様に実施す
ることができる。Although the embodiment has been described above, the present invention can be similarly applied to a light emitting element provided with an electron transport layer, a light emitting element in which the hole injection layer 22 also serves as the hole transport layer 23, and the like. .
【００２３】[0023]
【発明の効果】上記した通り、本発明の有機発光素子
は、ＣａＦ２とＡｌとを別々に蒸着して金属電極を構成
したので、逆バイアス電流が少なく、また、金属電極の
構成が簡単となる有機発光素子となる。As described above, in the organic light emitting device of the present invention, the metal electrode is formed by separately depositing CaF 2 and Al, so that the reverse bias current is small and the structure of the metal electrode is simple. Organic light emitting device.
【図１】本発明の一実施形態を示す有機発光素子の簡略
図である。FIG. 1 is a simplified diagram of an organic light emitting device showing one embodiment of the present invention.
【図２】上記有機発光素子のホ−ル注入層を形成する有
機化合物の分子構造を示す図である。FIG. 2 is a diagram showing a molecular structure of an organic compound forming a hole injection layer of the organic light emitting device.
【図３】上記有機発光素子の発光層と電子注入層を形成
する有機化合物の分子構造を示す図である。FIG. 3 is a view showing a molecular structure of an organic compound forming a light emitting layer and an electron injection layer of the organic light emitting device.
【図４】上記有機発光素子の逆バイアス電流を示す曲線
図である。FIG. 4 is a curve diagram showing a reverse bias current of the organic light emitting device.
【図５】上記有機発光素子の電圧−電流曲線図である。FIG. 5 is a voltage-current curve diagram of the organic light emitting device.
【図６】上記有機発光素子の電流−輝度曲線図である。FIG. 6 is a current-luminance curve diagram of the organic light emitting device.
【図７】上記有機発光素子の電圧−輝度曲線図である。FIG. 7 is a voltage-luminance curve diagram of the organic light emitting device.
【図８】上記有機発光素子の電圧−効率曲線図である。FIG. 8 is a voltage-efficiency curve diagram of the organic light emitting device.
【図９】上記有機発光素子の輝度−効率曲線図である。FIG. 9 is a luminance-efficiency curve diagram of the organic light emitting device.
【図１０】従来例として示した有機発光素子の簡略図で
ある。FIG. 10 is a simplified diagram of an organic light emitting device shown as a conventional example.
２０ ガラス基板 ２１ ＩＴＯ ２２ ホ−ル注入層 ２３ ホ−ル輸送層 ２４ 発光層 ２５ 電子注入層 ２６ 金属電極 Reference Signs List 20 glass substrate 21 ITO 22 hole injection layer 23 hole transport layer 24 light emitting layer 25 electron injection layer 26 metal electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川上 康之 東京都目黒区中目黒２−９−13 スタンレ −電気株式会社内 (72)発明者 田中 進一 東京都目黒区中目黒２−９−13 スタンレ −電気株式会社内 (72)発明者 小松 悠紀 東京都目黒区中目黒２−９−13 スタンレ −電気株式会社内 (72)発明者 甚出 行俊 東京都目黒区中目黒２−９−13 スタンレ −電気株式会社内 Ｆターム(参考） 3K007 AB05 AB18 CA01 CB01 DA00 DB03 FA01 FA03 5F041 AA21 CA45 CA83 CA88 CA98 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yasuyuki Kawakami 2-9-13 Stanley, Nakameguro-ku, Tokyo Metropolitan Electric Company (72) Inventor Shinichi Tanaka 2-9-13 Stanley, Nakameguro, Meguro-ku, Tokyo -Inside Electric Co., Ltd. (72) Inventor Yuki Komatsu 2-9-13 Stanley, Meguro-ku, Tokyo-Inside Electric Co., Ltd. (72) Inventor Yukitoshi Jinde 2-9-13, Stanley, Meguro-ku, Tokyo −F term in Electric Corporation (reference) 3K007 AB05 AB18 CA01 CB01 DA00 DB03 FA01 FA03 5F041 AA21 CA45 CA83 CA88 CA98
Claims (1)
もホ−ル注入層、発光層、電子注入層を有する有機発光
素子において、電子注入層にＣａＦ２とＡｌを別々に蒸
着して形成した金属電極を備えたことを特徴とする有機
発光素子。1. An organic light-emitting device having at least a hole injection layer, a light-emitting layer, and an electron injection layer having a laminated structure of an organic compound, wherein a metal electrode formed by separately depositing CaF 2 and Al on the electron injection layer. An organic light-emitting device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35712298A JP2000182782A (en) | 1998-12-16 | 1998-12-16 | Organic light emitting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35712298A JP2000182782A (en) | 1998-12-16 | 1998-12-16 | Organic light emitting element |
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| Publication Number | Publication Date |
|---|---|
| JP2000182782A true JP2000182782A (en) | 2000-06-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP35712298A Pending JP2000182782A (en) | 1998-12-16 | 1998-12-16 | Organic light emitting element |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223147B2 (en) | 2002-10-31 | 2007-05-29 | Seiko Epson Corporation | Method of producing electroluminescence apparatus, electroluminescence apparatus and electronic device |
| WO2017020366A1 (en) * | 2015-08-06 | 2017-02-09 | 深圳市华星光电技术有限公司 | Organic light-emitting diode |
-
1998
- 1998-12-16 JP JP35712298A patent/JP2000182782A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223147B2 (en) | 2002-10-31 | 2007-05-29 | Seiko Epson Corporation | Method of producing electroluminescence apparatus, electroluminescence apparatus and electronic device |
| WO2017020366A1 (en) * | 2015-08-06 | 2017-02-09 | 深圳市华星光电技术有限公司 | Organic light-emitting diode |
| US9780324B2 (en) | 2015-08-06 | 2017-10-03 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Orangic light emitting diodes (OLED) |
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