JP2000150953A - Semiconductor light emitting device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, which is capable of surely emitting light of superior directivity to reduce loads imposed on an optical system such as a lens or the like, and a manufacturing method thereof. SOLUTION: A semiconductor light emitting element 110 is equipped with a board 15A, an N-type block layer 6A provided with a through-hole 6AH and formed on the board 15A, a P-type clad layer 5A formed on the N-type block layer 6A and the exposed surface of the board 15A, a P-type active layer 4A provided with an active region 10A that emits light and formed on the P-type clad layer 5A, an N-side electrode 1A formed opposite to the board 15A about the active region 10A and provided with a hole 1AH through which light emitted from the active region 10A is extracted, a P-side electrode 7A formed opposite to the active region 10A with respect to the board 15A, and a reflective layer 9 which is located between the active region 10A and the N-side electrode 1A and reflects and concentrates light emitted from the active region 10A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light emitting device, and more particularly, to a current confinement type semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device.

[0002]

2. Description of the Related Art JP-A-60-145677 discloses that
A conventional current confinement type semiconductor light emitting device is disclosed.
The semiconductor light emitting device disclosed in the above publication will be described below.

FIG. 9 shows a configuration of a conventional semiconductor light emitting device. The semiconductor light emitting device 90 includes a substrate 15, an N-type block layer 96 formed on the substrate 15 and having a hole 96 </ b> H exposing the substrate 15, and a P-type layer formed on the N-type block layer 96 and the exposed surface of the substrate 15. A cladding layer 5, a P-type active layer 4 formed on the P-type cladding layer 5 and having an active region 10 for emitting light, an N-type cladding layer 3 formed on the P-type active layer 4, An N-type window layer 2 formed on an N-type cladding layer 3 and an N-side electrode 1 formed on a side opposite to the substrate 15 with respect to the active region 10 and having a light extraction hole 1H for extracting light emitted from the active region 10. And a P-side electrode 7 formed on the opposite side of the active region 10 with respect to the substrate 15.

[0004] The operation of the conventional semiconductor light emitting device 90 will be described. The current injected from the P-side electrode 7 passes from the substrate 15 through the center of the hole 96H, through the P-type cladding layer 5, the P-type active layer 4, the N-type cladding layer 3, and the N-type window layer 2 to the N-side electrode. Flow to 1. Since a reverse bias is applied between the N-type block layer 96 and the P-type cladding layer 5, no current flows from the substrate 15 to the N-type block layer 96. The N-type block layer 96 functions as a current confinement layer. Semiconductor light emitting element 9
At 0, only the central portion where the hole 96H is formed is the current path.

In the semiconductor light emitting device 90, recombination light emission occurs in the active region 10 near the hole 96H. Lights 12, 13, and 14 emitted from the active region 10 radiate from holes 1H formed on the opposite side of the active region 10 from the substrate 15 because the substrate 15 is opaque.

FIG. 10 shows a method for manufacturing a conventional semiconductor light emitting device 90. Referring to FIG. 10A, substrate 15 is prepared. Referring to FIG. 10B, an N-type block layer 96 is epitaxially grown on the entire surface of substrate 15. Referring to FIG. 10C, N-type block layer 96 is etched to form circular hole 96H reaching substrate 15.

Referring to FIG. 10D, a P-type cladding layer 5, a P-type active layer 4, an N-type cladding layer 3, and an N-type window layer 2 are formed on a substrate 15 on which an N-type block layer 96 is formed. Epitaxial growth is performed sequentially. Referring to FIG. 10E, N-side electrode 1 and P-side electrode 7 are deposited. When the portion of the N-side electrode 1 located directly above the hole 96H formed in the N-type block layer 96 is removed by round etching, and the hole 1H serving as a light extraction window is formed, the manufacture of the semiconductor light emitting device 90 is completed. I do.

[0008]

Referring again to FIG.
In the conventional semiconductor light emitting device 90, the lights 12 and 14 emitted from the active region 10 spread and radiate from the hole 1H.
To ensure the directivity of the light emitted from the active region 10,
If light 12 and 14 radiating from the hole 1H are condensed using an optical system such as a lens, a problem arises in that the load on the optical system such as a lens increases.

In the conventional semiconductor light emitting device 90, since the N-type block layer 96 functions as a current confinement layer, current flows only in the central portion where the hole 96H is formed. When the current flows only in the central portion, the heat generated by light emission in the active region 10 increases. In addition, since light is emitted at the center, heat due to light emission is difficult to escape. As a result,
The light emission causes a problem that the thermal resistance increases and the luminous efficiency in the active region 10 decreases.

An object of the present invention is to provide a semiconductor light emitting device and a method for manufacturing the semiconductor light emitting device which can secure good directivity of emitted light while reducing the load on an optical system such as a lens. is there.

Another object of the present invention is to provide a semiconductor light emitting device having good luminous efficiency and a method of manufacturing a semiconductor light emitting device which can reduce the thermal resistance due to light emission even when a current flows intensively only in the central portion. Is to provide.

[0012]

A semiconductor light emitting device according to the present invention comprises a substrate, an N-type block layer formed on the substrate and having a hole exposing the substrate, the N-type block layer and the substrate. A P-type cladding layer formed on the exposed surface of the P-type cladding layer, a P-type active layer formed on the P-type cladding layer and having an active region that emits light, and a substrate with respect to the active region. A semiconductor light emitting device comprising: an N-side electrode formed on the opposite side and having a light extraction hole for extracting light emitted from the active region; and a P-side electrode formed on the opposite side to the active region with respect to the substrate. An element, comprising a reflective layer formed between the active region and the N-side electrode, for reflecting and condensing light emitted from the active region, thereby achieving the above object.

[0013] The semiconductor light emitting device may further include an N-type cladding layer formed on the P-type active layer, and the reflection layer may be formed on the N-type cladding layer.

Another semiconductor light emitting device according to the present invention is a substrate, an N-type block layer formed on the substrate and having a hole exposing the substrate, an N-type block layer and an exposed surface of the substrate. And a P-type cladding layer formed on the P-type cladding layer and having an active region for emitting light.
A type active layer, an N-side electrode formed on the opposite side of the active region to the substrate and having a light extraction hole for extracting light emitted from the active region, and an opposite side of the substrate to the active region. A P-side electrode formed on the N-type block layer, wherein the N-type block layer has a heat radiating portion for radiating heat generated in the active region. The exposed surface has a sufficiently large area so that undesired thermal resistance is not generated by the heat generated in the active region, thereby achieving the above object.

The P-type cladding layer may be formed on a part of the N-type block layer.

In the method for manufacturing a semiconductor light emitting device according to the present invention, a step of forming an N-type block layer having a hole exposing a substrate on the substrate, and a step of forming a P-type cladding layer on the N-type block layer and the substrate Forming on the exposed surface; forming a P-type active layer having an active region for emitting light on the P-type cladding layer; reflecting and collecting light emitted from the active region; Forming a reflective layer to emit light on the side opposite to the substrate with respect to the active region; and forming an N-side electrode having a light extraction hole for extracting light emitted from the active region with the substrate relative to the active region. The method includes a step of forming the P-side electrode on the side opposite to the active region with respect to the substrate, thereby achieving the above object.

According to another method of manufacturing a semiconductor light emitting device according to the present invention, a first step of forming an N-type block layer having a hole exposing a substrate on the substrate; And a second step of forming a P-type active layer having an active region that emits light on the P-type cladding layer; a second step of forming the active region for emitting light on the exposed surface of the substrate; A fourth step of forming an N-side electrode having a light extraction hole for extracting light on the opposite side of the active region from the substrate, and forming a P-side electrode on the opposite side of the substrate to the active region. A fifth step, wherein the N-type block layer has a heat radiating portion for radiating heat generated in the active region, and the second step includes forming the heat radiating portion in the active region. The exposed surface must be large enough to prevent undesirable thermal resistance from And As, the P-type clad layer is formed on the exposed surface of the N-type blocking layer and the substrate,
Thereby, the above object is achieved.

[0018]

(Embodiment 1) FIG. 1 shows a configuration of a semiconductor light emitting device according to Embodiment 1. The semiconductor light emitting device 110 includes a substrate 15A, an N-type block layer 6A formed on the substrate 15A and having a hole 6AH exposing the substrate 15A, and a P-type layer formed on the N-type block layer 6A and the exposed surface of the substrate 15A. A cladding layer 5A, a P-type active layer 4A formed on the P-type cladding layer 5A and having an active region 10A that emits light, an N-type cladding layer 3A formed on the P-type active layer 4A, An N-type window layer 2A formed on the N-type cladding layer 3A and an N-side electrode 1A having a light extraction hole 1AH formed on the side opposite to the substrate 15A with respect to the active region 10A and extracting light emitted from the active region 10A. A reflection layer 9 formed between the activation region 10A and the N-side electrode 1A for reflecting and condensing light emitted from the active region 10A; and a reflection layer 9 on the opposite side of the substrate 15A to the active region 10A. And a P-side electrode 7A of made a. The reflection layer 9 is formed of a material having a high aluminum mixed crystal ratio.

The operation of the semiconductor light emitting device 110 will be described.
As in the case of the conventional semiconductor light emitting device 90 described above with reference to FIG. 9, the current injected from the P-side electrode 7A flows from the substrate 15A through the center of the hole 6AH to the P-type cladding layer 5A.
A, the P-type active layer 4A, the N-type cladding layer 3A, and the N-type window layer 2A flow to the N-side electrode 1A. Since there is a reverse bias between the N-type block layer 6A and the P-type cladding layer 5A, no current flows from the substrate 15A to the N-type block layer 6A. The N-type block layer 6A functions as a current confinement layer. In the semiconductor light emitting device 110, only the central portion where the hole 6AH is formed serves as a current path.

Lights 12A and 14A which are to be spread and emitted from the active region 10A are reflected by the reflective layer 9 and emitted from the hole 1AH so as to be condensed at the center in the traveling direction of the light. Light 13 emitted from the active region 10A radiates from the hole 1AH.

FIGS. 2 and 3 show a method of manufacturing the semiconductor light emitting device 110 according to the first embodiment. FIG. 4 shows a flowchart of a method for manufacturing the semiconductor light emitting device 110.

Referring to FIG. 2, FIG. 3 and FIG.
5A is prepared (FIG. 2A). The DBR reflection layer 8 and the N-type block layer 6A are epitaxially grown on the entire surface of the substrate 15A (FIG. 2B). N-type block layer 6A
Is etched to form a circular hole 6AH reaching the DBR reflection layer 8 (FIG. 2C, FIG. 4: S4).
1).

DBR reflection layer 8 and N-type block layer 6A
The P-type cladding layer 5A, the P-type active layer 4A, the N-type cladding layer 3A, and the N-type window layer 2AP are sequentially epitaxially grown on the substrate 15A on which is formed (FIG. 2).
(D), FIG. 4: S42, S43, S44). The N-type window layer 2AP is etched to form an N-type window layer 2A (FIG. 2E, FIG. 4: S45).

A reflective layer 9P is epitaxially grown on the N-type cladding layer 3A and the N-type window layer 2A (FIG. 3A). The reflection layer 9P is etched to form the reflection layer 9 (FIG. 3B, FIG. 4: S46), and the N-side electrode 1A and the P-side electrode 7A are deposited (FIG. 4: S47, S).
48). A portion of the N-side electrode 1A located directly above the hole 6AH formed in the N-type block layer 6A is removed by round etching to form a hole 1AH serving as a light extraction window.

As described above, according to the semiconductor light emitting device 110 of the first embodiment, the activation region 10A and the N-side electrode 1
A, a reflection layer 9 for reflecting and condensing light emitted from the active region 10A is provided between the active region 10A and the active region 10A.
The light 12A and 14A which are to be spread and emitted by the light source are reflected by the reflection layer 9 and are condensed at the center in the light traveling direction. As a result, the light-collecting properties of the semiconductor light emitting element 110 itself are improved, and the burden on an optical system such as a lens system can be reduced.

Although a semiconductor light emitting device having a structure in which a P-type active layer 4A having an active region 10A, an N-type clad layer 3A and a reflective layer 9 are stacked in this order has been described as an example, the present invention is not limited to this. Not done. The reflection layer 9 includes an active region 10
What is necessary is just to form between A and N side electrode 1A.

Embodiment 2 FIG. 5 shows a configuration of a semiconductor light emitting device 120 according to Embodiment 2. The same components as those of the semiconductor light emitting device 110 according to the first embodiment described above with reference to FIG. 1 are denoted by the same reference numerals. A detailed description of these will be omitted.

The semiconductor light emitting device 120 includes a substrate 15B,
Hole 6BH formed on substrate 15B and exposing substrate 15B
, A P-type cladding layer 5A formed on the exposed surface of the N-type blocking layer 6B and the substrate 15B, and an active region 10A formed on the P-type cladding layer 5A to emit light. A P-type active layer 4A, an N-type cladding layer 3A formed on the P-type active layer 4A, an N-type window layer 2A formed on the N-type cladding layer 3A,
An N-side electrode 1A formed on the side opposite to the substrate 15B with respect to the active region 10A and having a light extraction hole 1AH for extracting light emitted from the active region 10A;
A reflection layer 9 formed between the side electrode 1A and reflecting and condensing light emitted from the active region 10A; and a P-side electrode 7B formed on the side opposite to the active region 10A with respect to the substrate 15B.
And

The N-type block layer 6B has a heat radiating portion 6BR for radiating heat generated in the active region 10A. The heat radiating portion 6BR has an exposed surface S1 and an exposed surface S2 which are large enough to prevent undesirable thermal resistance from being generated by heat generated in the active region 10A. The exposed surface S1 and the exposed surface S2 are formed by half dicing or the like.

The heat radiating portion 6BR is exposed in the exposed surface S1 in the horizontal direction at T3 = 10 μm or more, and is exposed in the exposed surface S2 in the thickness direction at T1 = 1.0 μm or more.

The operation of the semiconductor light emitting device 120 will be described.
As in the case of the semiconductor light emitting device 110 according to the first embodiment described above with reference to FIG. 1, the current injected from the P-side electrode 7B flows from the substrate 15B through the center of the hole 6BH.
-Type cladding layer 5A, P-type active layer 4A, N-type cladding layer 3
It flows to the N-side electrode 1A via the A and N-type window layers 2A. Since there is a reverse bias between the N-type block layer 6B and the P-type clad layer 5A, no current flows from the substrate 15B to the N-type block layer 6B. N-type block layer 6B
Functions as a current confinement layer. In the semiconductor light emitting device 120, only the central portion where the hole 6BH is formed serves as a current path.

The heat generated in the active region 10A is
The exposed surfaces S1, S formed in the heat radiating portion 6BR as shown by
Dissipates heat through 2. The exposed surfaces S1 and S2 correspond to the active region 1
It has a sufficiently large area that undesired thermal resistance is not generated by the heat generated at 0A. N-type block layer 6
B is formed such that its thickness T1 is greater than the thickness T2 of the N-type block layer 6 formed in the conventional semiconductor light emitting device 90 shown in FIG. 9, so that the heat radiation effect is further enhanced.

Semiconductor light emitting device 110 according to the first embodiment
As in the case of (1), the light beams 12A and 14A, which are emitted from the active region 10A and are to be spread, are reflected by the reflective layer 9 and converged at the center in the light traveling direction.

FIGS. 6 and 7 show a method of manufacturing a semiconductor light emitting device according to the second embodiment. FIG. 8 shows the second embodiment.
1 is a flowchart of a method for manufacturing a semiconductor light emitting device according to the present invention.

Referring to FIG. 6, FIG. 7 and FIG.
5B is prepared (FIG. 6A). The DBR reflection layer 8B and the N-type block layer 6B are epitaxially grown on the entire surface of the substrate 15B (FIG. 6B). N-type block layer 6
B is etched to form a circular hole 6BH reaching the DBR reflection layer 8B (FIG. 6C, FIG. 8: S8).
1).

DBR reflection layer 8B and N-type block layer 6
The P-type clad layers 5A, 5A,
The active layer 4A, the N-type cladding layer 3A and the N-type window layer 2AP are sequentially epitaxially grown (FIG. 6).
(D), FIG. 8: S82, S83, S84).

P-type cladding layer 5A, P-type active layer 4A, N
The mold cladding layer 3A and the N-type window layer 2A are formed on a part of the PN-type block layer 6B such that the exposed surface S1 is exposed.

The N-type window layer 2AP is etched to form an N-type window layer 2A (FIG. 6).
(E), FIG. 8: S85).

A reflective layer 9P is epitaxially grown on the N-type cladding layer 3A and the N-type window layer 2A (FIG. 7A). The reflection layer 9P is etched to form the reflection layer 9 (FIG. 7B, FIG. 8: S86), and the N-side electrode 1A and the P-side electrode 7B are deposited (FIG. 8: S87, S).
88). The portion of the N-side electrode 1A located directly above the hole 6BH formed in the N-type block layer 6B is removed by round etching to form a hole 1AH serving as a light extraction window.

As described above, according to the semiconductor light emitting device 120 of the second embodiment, the N-type block layer 6B has the heat radiating portion 6BR for radiating the heat generated in the active region 10A. The exposed surfaces S1 and S2 have a sufficiently large area that undesired thermal resistance does not occur due to heat generated in the active region 10A. The heat generated in the active region 10A radiates through the exposed surfaces S1 and S2 formed in the heat radiating portion 6BR.

As described above, the N-type block layer 6B, which is conventionally used only for interrupting the current, can function as a heat sink for dissipating generated heat.

As a result, it is possible to provide a semiconductor light emitting device having a good luminous efficiency and a method of manufacturing a semiconductor light emitting device which can reduce the thermal resistance due to light emission even when a current flows intensively only in the central portion. it can.

The semiconductor light emitting device having a configuration in which the P-type cladding layer 5A, the P-type active layer 4A and the N-type cladding layer 3A are formed on a part of the N-type block layer 6B has been described as an example. However, the present invention is not limited to this. The N-type block layer 6B has a heat radiating portion for radiating heat generated in the active region 10A. The heat radiating portion has an area large enough to prevent undesirable heat resistance from being generated by the heat generated in the active region 10A. What is necessary is just to have an exposed surface. For example, even if the P-type cladding layer, the P-type active layer, and the N-type cladding layer are formed on the entire surface of the N-type block layer 6B and the exposed surface S1 is not formed, the exposed surface S2 generates undesirable thermal resistance. What is necessary is just to have a sufficiently large area so that it does not occur.

[0044]

As described above, according to the present invention, a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device capable of securing good directivity of emitted light while reducing the load on an optical system such as a lens. A method can be provided.

Further, according to the present invention, a semiconductor light emitting device having a good luminous efficiency and a method of manufacturing a semiconductor light emitting device which can reduce the thermal resistance due to light emission even when a current flows intensively only in the central portion. Can be provided.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor light emitting device according to a first embodiment.

FIG. 2 is a sectional view illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. (A) is a diagram showing a step of preparing a substrate 15A. FIG. 6B is a view showing a step of forming a DBR reflection layer 8A and an N-type block layer 6A. (C) is a diagram showing a step of forming a circular hole 6AH in the N-type block layer 6A. (D) is a diagram showing a step of forming a P-type cladding layer 5A, a P-type active layer 4A, an N-type cladding layer 3A, and an N-type window layer 2AP. (E) is a diagram showing a step of forming an N-type window layer 2A.

FIG. 3 is a sectional view illustrating the method for manufacturing the semiconductor light emitting device according to the first embodiment. (A) is a diagram showing a step of forming a reflection layer 9P. (B) is a view showing a step of forming the reflection layer 9 by etching the reflection layer 9P.

FIG. 4 is a flowchart of a method for manufacturing a semiconductor light emitting device according to the first embodiment.

FIG. 5 is a cross-sectional view illustrating a configuration of a semiconductor light emitting device according to a second embodiment.

FIG. 6 is a sectional view illustrating the method for manufacturing the semiconductor light emitting device according to the second embodiment. (A) It is a figure which shows the process of preparing the board | substrate 15B. FIG. 5B is a view showing a step of forming a DBR reflection layer 8B and an N-type block layer 6B. (C) is a diagram showing a step of forming a circular hole 6BH in the N-type block layer 6B. (D) is a view showing a step of forming a P-type cladding layer 5A, a P-type active layer 4A, an N-type cladding layer 3A, and an N-type window layer 2AP on a part of the N-type block layer 6B. (E) is a diagram showing a step of forming an N-type window layer 2A.

FIG. 7 is a sectional view illustrating the method for manufacturing the semiconductor light emitting device according to the second embodiment. (A) is a diagram showing a step of forming a reflection layer 9P. (B) is a view showing a step of forming the reflection layer 9 by etching the reflection layer 9P.

FIG. 8 is a flowchart of a method for manufacturing a semiconductor light emitting device according to the second embodiment.

FIG. 9 is a cross-sectional view illustrating a configuration of a conventional semiconductor light emitting device.

FIG. 10 is a cross-sectional view illustrating a method for manufacturing a conventional semiconductor light emitting device. FIG. 3A is a view showing a step of preparing a substrate 15. (B) It is a figure showing the process of forming N type block layer 96. (C) is a view illustrating a step of forming a circular hole 96H in the N-type block layer 96; (D) is a diagram showing a step of forming a P-type cladding layer 5, a P-type active layer 4, an N-type cladding layer 3, and an N-type window layer 2. (E) is a diagram showing a step of depositing an N-side electrode 1 and a P-side electrode 7.

[Explanation of symbols]

 Reference Signs List 1A N-side electrode 1AH Light extraction hole 5A P-type cladding layer 6A N-type blocking layer 6AH hole 9 Reflecting layer 10A Active region 15A Substrate

Claims (6)

[Claims] 1. A substrate, an N-type block layer formed on the substrate and having a hole exposing the substrate, a P-type clad layer formed on the N-type block layer and an exposed surface of the substrate. A P-type active layer formed on the P-type cladding layer and having an active region that emits light; and a light emitted from the active region, formed on the opposite side of the active region to the substrate. N with light extraction hole for extracting light
A semiconductor light emitting device comprising: a side electrode; and a P-side electrode formed on a side opposite to the active region with respect to the substrate, wherein the semiconductor light-emitting device is formed between the active region and the N-side electrode. A semiconductor light emitting device including a reflective layer that reflects and collects light emitted from an active region. 2. The semiconductor light emitting device according to claim 1, further comprising an N-type cladding layer formed on the P-type active layer, wherein the reflection layer is formed on the N-type cladding layer. 2. The semiconductor light emitting device according to 1. 3. A substrate, an N-type block layer formed on the substrate and having a hole exposing the substrate, a P-type clad layer formed on the N-type block layer and an exposed surface of the substrate. A P-type active layer formed on the P-type cladding layer and having an active region that emits light; and a light formed on the opposite side of the active region to the substrate and emitted from the active region. N with light extraction hole for extracting light
A semiconductor light emitting device comprising: a side electrode; and a P-side electrode formed on a side opposite to the active region with respect to the substrate, wherein the N-type block layer radiates heat generated in the active region. A semiconductor light emitting device having a heat radiating portion that has an exposed surface large enough to prevent undesirable heat resistance from being generated by heat generated in the active region. 4. The semiconductor light emitting device according to claim 3, wherein said P-type cladding layer is formed on a part of said N-type block layer. 5. A step of forming an N-type block layer having a hole exposing the substrate on the substrate; a step of forming a P-type clad layer on the N-type block layer and the exposed surface of the substrate; Forming a P-type active layer having an active region for emitting light on the P-type cladding layer; and forming a reflective layer for reflecting and condensing light emitted from the active region in the active region. Forming an N-side electrode having a light extraction hole for extracting light emitted from the active region on the opposite side of the active region from the substrate; Forming an electrode on the side opposite to the active region with respect to the substrate. 6. A first step of forming an N-type block layer having a hole exposing the substrate on the substrate, and a second step of forming a P-type cladding layer on the N-type block layer and the exposed surface of the substrate. A step of forming a P-type active layer having an active region that emits light on the P-type cladding layer; and an N-side electrode having a light extraction hole for extracting light emitted from the active region. Forming a P-side electrode on the side opposite to the active region with respect to the substrate, and a fifth step of forming a P-side electrode on the side opposite to the active region with respect to the substrate. The mold block layer has a heat radiating portion for radiating heat generated in the active region. The second step is performed so that the heat generated by the heat radiating portion does not generate an undesirable thermal resistance. The P-type cladding layer is formed on the N-type cladding layer so as to have a sufficiently large exposed area.
A method for manufacturing a semiconductor light emitting device, wherein the method is formed on a mold block layer and an exposed surface of the substrate.