JP2000147198A5 - - Google Patents

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Publication number
JP2000147198A5
JP2000147198A5 JP1999206837A JP20683799A JP2000147198A5 JP 2000147198 A5 JP2000147198 A5 JP 2000147198A5 JP 1999206837 A JP1999206837 A JP 1999206837A JP 20683799 A JP20683799 A JP 20683799A JP 2000147198 A5 JP2000147198 A5 JP 2000147198A5
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JP
Japan
Prior art keywords
substance
layer
multilayer film
substance layer
refractive index
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Pending
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JP1999206837A
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Japanese (ja)
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JP2000147198A (en
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Priority to JP11206837A priority Critical patent/JP2000147198A/en
Priority claimed from JP11206837A external-priority patent/JP2000147198A/en
Priority to US09/391,376 priority patent/US6295164B1/en
Publication of JP2000147198A publication Critical patent/JP2000147198A/en
Priority to US09/867,191 priority patent/US6441963B2/en
Publication of JP2000147198A5 publication Critical patent/JP2000147198A5/ja
Pending legal-status Critical Current

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Description

【特許請求の範囲】
【請求項1】 スパッタリング法を用いて基板の上に、屈折率が相対的に小さい第1物質の層(第1物質層)と屈折率が相対的に大きい第2物質の層(第2物質層)とを交互に複数回積層することにより多層膜反射鏡を製造する方法において、
前記第1物質層を形成した後、前記第2物質層を形成する前に、形成した前記第1物質層の表面にイオンビームを照射して表面を平滑化する工程を設けるか、
前記第2物質層を形成した後、前記第1物質層を形成する前に、形成した前記第2物質層の表面にイオンビームを照射して表面を平滑化する工程を設けるか、
或いは、前記両工程を設けることを特徴とする多層膜反射鏡の製造方法。
【請求項2】 前記イオンビームのイオン種は、不活性ガスであることを特徴とする請求項1記載の製造方法。
【請求項3】 前記イオンビームのエネルギーは、50eV以上1000eV以下であることを特徴とする請求項1または2記載の製造方法。
【請求項4】 前記基板は接地電位にあるか、或いは前記基板には直流バイアス電圧が印加されていることを特徴とする請求項1〜3のいずれかに記載の製造方法。
【請求項5】 スパッタリング法を用いて基板の上に、屈折率が相対的に小さい第1物質の層(第1物質層)と屈折率が相対的に大きい第2物質の層(第2物質層)とが交互に積層された多層膜反射鏡において、
イオンビームが照射され、平滑化された前記第1物質層と前記第2の物質層との界面を有することを特徴とする多層膜反射鏡。
【請求項6】 前記第1物質層の膜厚と前記第2物質層の膜厚の和である周期長をdとし、前記基板の表面粗さRMS値をσsubとした場合、前記界面の粗さRMS値であるσintは、本請求項の後述の式1又は式2に示す範囲まで平滑化された界面を有することを特徴とする請求項5に記載の多層膜反射鏡。
式1:d≧5nmの多層膜では、σint−σsub<0.2nm
式2:d<5nmの多層膜では、σint−σsub<0.5nm
【請求項7】 前記第1物質層を形成する物質と前記第2物質層を形成する物質とが互いに拡散する領域が1nm以下になるように平滑された前記界面を有することを特徴とする請求項5に記載の多層膜反射鏡。
【請求項8】 基板の上に、屈折率が相対的に小さい第1物質の層(第1物質層)と屈折率が相対的に大きい第2物質の層(第2物質層)とが交互に積層された多層膜反射鏡において、
前記多層膜の周期長をdとし、前記基板の表面粗さRMS値をσsubとした場合、前記界面の粗さRMS値であるσintは、本請求項の後述の式3又は式4に示す範囲であることを特徴とする請求項5に記載の多層膜反射鏡。
式3:d≧5nmの多層膜では、σint−σsub<0.2nm
式4:d<5nmの多層膜では、σint−σsub<0.5nm
【請求項9】 基板の上に、屈折率が相対的に小さい第1物質の層(第1物質層)と屈折率が相対的に大きい第2物質の層(第2物質層)とが交互に積層された多層膜反射鏡において、
前記第1物質層を形成する物質と前記第2物質層を形成する物質とが界面で互いに拡散する領域が1nm以下である前記第1物質層と前記第2の物質層との界面を有することを特徴とする多層膜反射鏡。
【請求項10】 請求項5〜9のいずれかに記載の多層膜反射鏡を有することを特徴とする露光装置。
[Claims]
1. A layer of a first substance having a relatively small refractive index (first substance layer) and a layer of a second substance having a relatively large refractive index (second substance) are placed on a substrate by a sputtering method. In a method of manufacturing a multilayer film reflector by alternately stacking layers) a plurality of times,
After forming the first substance layer and before forming the second substance layer, a step of irradiating the surface of the formed first substance layer with an ion beam to smooth the surface is provided.
After forming the second substance layer and before forming the first substance layer, a step of irradiating the surface of the formed second substance layer with an ion beam to smooth the surface is provided.
Alternatively, a method for manufacturing a multilayer film reflector, which comprises providing both of the above steps.
2. The production method according to claim 1, wherein the ion species of the ion beam is an inert gas.
3. The manufacturing method according to claim 1, wherein the energy of the ion beam is 50 eV or more and 1000 eV or less.
4. The manufacturing method according to claim 1, wherein the substrate is at a ground potential, or a DC bias voltage is applied to the substrate.
5. A layer of a first substance having a relatively small refractive index (first substance layer) and a layer of a second substance having a relatively large refractive index (second substance) are placed on a substrate by a sputtering method. In a multilayer film reflector in which layers) are alternately laminated,
A multilayer film reflector characterized by having an interface between the first material layer and the second material layer that has been irradiated with an ion beam and smoothed.
6. When the period length, which is the sum of the film thickness of the first substance layer and the film thickness of the second substance layer, is d, and the surface roughness RMS value of the substrate is σsub, the roughness of the interface is defined. The multilayer film reflector according to claim 5, wherein the RMS value σint has an interface smoothed to the range shown in the formula 1 or formula 2 described later in the present claim.
Equation 1: For a multilayer film with d ≧ 5 nm, σint−σsub <0.2 nm
Equation 2: For multilayer films with d <5 nm, σint-σsub <0.5 nm
7. The invention is characterized by having the interface smoothed so that a region in which the substance forming the first substance layer and the substance forming the second substance layer diffuse each other is 1 nm or less. Item 5. The multilayer film reflecting mirror according to Item 5.
8. A layer of a first substance having a relatively small refractive index (first substance layer) and a layer of a second substance having a relatively large refractive index (second substance layer) alternate on the substrate. In the multilayer film reflector laminated on the
When the period length of the multilayer film is d and the surface roughness RMS value of the substrate is σsub, the roughness RMS value of the interface, σint, is in the range shown in Equation 3 or Equation 4 described later in this claim. The multilayer film reflector according to claim 5.
Equation 3: For a multilayer film with d ≧ 5 nm, σint−σsub <0.2 nm
Equation 4: For multilayer films with d <5 nm, σint-σsub <0.5 nm
9. A layer of a first substance having a relatively small refractive index (first substance layer) and a layer of a second substance having a relatively large refractive index (second substance layer) alternate on the substrate. In the multilayer film reflector laminated on the
Having an interface between the first substance layer and the second substance layer in which the region where the substance forming the first substance layer and the substance forming the second substance layer diffuse each other at the interface is 1 nm or less. A multi-layer film reflector characterized by.
10. An exposure apparatus comprising the multilayer film reflector according to any one of claims 5 to 9.

JP11206837A 1998-09-08 1999-07-21 Multi-layer film reflecting mirror and its manufacture Pending JP2000147198A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11206837A JP2000147198A (en) 1998-09-08 1999-07-21 Multi-layer film reflecting mirror and its manufacture
US09/391,376 US6295164B1 (en) 1998-09-08 1999-09-08 Multi-layered mirror
US09/867,191 US6441963B2 (en) 1998-09-08 2001-05-30 Multi-layered mirror

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-253484 1998-09-08
JP25348498 1998-09-08
JP11206837A JP2000147198A (en) 1998-09-08 1999-07-21 Multi-layer film reflecting mirror and its manufacture

Publications (2)

Publication Number Publication Date
JP2000147198A JP2000147198A (en) 2000-05-26
JP2000147198A5 true JP2000147198A5 (en) 2006-06-15

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7843632B2 (en) * 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
US7130098B2 (en) * 2002-01-24 2006-10-31 Rosemount Aerospace Inc. Silicon wafer based macroscopic mirror for wide angle scanning applications
US20080266654A1 (en) * 2007-04-26 2008-10-30 Asml Netherlands B.V. Extreme ultraviolet microscope
JP5538840B2 (en) * 2009-11-30 2014-07-02 キヤノン株式会社 X-ray monochromator, manufacturing method thereof, and X-ray spectrometer
US8526104B2 (en) * 2010-04-30 2013-09-03 Corning Incorporated Plasma ion assisted deposition of Mo/Si multilayer EUV coatings

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