JP2000144438A - Electroless copper plating device - Google Patents
Electroless copper plating deviceInfo
- Publication number
- JP2000144438A JP2000144438A JP10328460A JP32846098A JP2000144438A JP 2000144438 A JP2000144438 A JP 2000144438A JP 10328460 A JP10328460 A JP 10328460A JP 32846098 A JP32846098 A JP 32846098A JP 2000144438 A JP2000144438 A JP 2000144438A
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- JP
- Japan
- Prior art keywords
- plating
- plating solution
- tank
- temperature
- bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、無電解銅めっき装
置に係り、特に半導体基板に形成された配線用の溝に銅
を充填する等の用途の無電解銅めっき装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless copper plating apparatus, and more particularly to an electroless copper plating apparatus used for filling copper in wiring grooves formed in a semiconductor substrate.
【０００２】[0002]
【従来の技術】従来、半導体基板上に配線回路を形成す
るためには、基板面上にスパッタリング等を用いて導体
の成膜を行った後、さらにレジスト等のパターンマスク
を用いたケミカルドライエッチングにより膜の不要部分
を除去していた。2. Description of the Related Art Conventionally, in order to form a wiring circuit on a semiconductor substrate, a conductor is formed on the substrate surface by sputtering or the like, and then a chemical dry etching is performed using a pattern mask such as a resist. Unnecessary portions of the film were removed.
【０００３】配線回路を形成するための金属材料として
は、一般にアルミニウム（Ａｌ）又はアルミニウム合金
が広く用いられていた。しかしながら、半導体の集積度
が高くなるにつれて配線幅が細くなり、電流密度が増加
して熱応力や温度上昇を生じ、ストレスマイグレーショ
ンやエレクトロマイグレーションによって、ついには断
線或いは短絡等のおそれが生じる。この傾向は、アルミ
配線が薄膜化するに従いさらに顕著となる傾向にある。As a metal material for forming a wiring circuit, generally, aluminum (Al) or an aluminum alloy has been widely used. However, as the degree of integration of the semiconductor increases, the width of the wiring becomes narrower, the current density increases, and thermal stress and temperature rise. As a result, stress migration or electromigration may eventually cause disconnection or short circuit. This tendency tends to become more remarkable as the aluminum wiring becomes thinner.
【０００４】そこで、通電による抵抗損失を避けるた
め、より導電性の高い銅などの材料を配線形成に採用す
ることが要求されている。しかしながら、銅又はその合
金はドライエッチングが難しく、基板全面に成膜してか
らパターンを形成する上記の方法の採用は困難である。
そこで、予め所定パターンの配線用の溝を形成してお
き、その中に銅又はその合金を充填する工程が考えられ
る。これによれば、膜をエッチングにより除去する工程
は不要で、表面段差を取り除くための研磨工程を行うこ
とで銅配線層を形成できる。また、多層配線回路の上下
層を連絡するプラグと呼ばれる部分も同時に形成するこ
とができる利点がある。[0004] Therefore, in order to avoid resistance loss due to energization, it is required that a material such as copper having higher conductivity be used for wiring formation. However, it is difficult to dry-etch copper or its alloy, and it is difficult to adopt the above-described method of forming a pattern after forming a film on the entire surface of the substrate.
Therefore, a step of forming a wiring groove in a predetermined pattern in advance and filling the groove with copper or an alloy thereof may be considered. According to this, a step of removing the film by etching is unnecessary, and a copper wiring layer can be formed by performing a polishing step for removing a surface step. In addition, there is an advantage that a portion called a plug connecting the upper and lower layers of the multilayer wiring circuit can be formed at the same time.
【０００５】しかしながら、このような配線溝あるいは
プラグの形状は、配線幅が微細化するに伴いかなりの高
アスペクト比（深さと直径又は幅の比）となり、スパッ
タリング成膜では均一な金属の充填が困難であった。ま
た、種々の材料の成膜手段として化学的気相成長（ＣＶ
Ｄ）法が用いられるが、銅又はその合金では、適当な気
体原料を準備することが困難であり、また、有機原料を
採用する場合には、これから堆積膜中へ炭素（Ｃ）が混
入してマイグレーション性が上がるという問題点があっ
た。そこで、基板をめっき液中に浸漬させて無電解銅め
っきを行なう方法が提案されている。係るめっきによる
成膜では、高アスペクト比の配線溝を均一に銅で充填す
ることが可能となる。However, such wiring grooves or plugs have a considerably high aspect ratio (ratio of depth to diameter or width) as the wiring width becomes finer. It was difficult. In addition, chemical vapor deposition (CV) is used as a means for forming various materials.
Although the D) method is used, it is difficult to prepare an appropriate gaseous raw material with copper or its alloy, and when an organic raw material is used, carbon (C) is mixed into the deposited film from now on. There is a problem that the migration property is increased. Thus, a method has been proposed in which a substrate is immersed in a plating solution to perform electroless copper plating. In the film formation by such plating, it becomes possible to uniformly fill a wiring groove having a high aspect ratio with copper.
【０００６】ここに、無電解銅めっきに使用されるめっ
き液には、ホルマリン（ＨＣＨＯ）やグリオキシル酸
（ＣＨＯＣＯＯＨ）などの還元剤が含まれている。また
無電解銅めっきでめっき析出速度と皮膜の品質（伸び）
を上げる場合のめっき液の適温は、５０〜８０℃前後で
あり、このため、めっき液は、一般に加熱装置を備えた
恒温槽（めっき液循環槽）内に一定の温度（６０℃前
後）で貯蔵されていて、めっき処理を行うめっき処理槽
との間を循環させるように構成されていた。Here, the plating solution used for electroless copper plating contains a reducing agent such as formalin (HCHO) or glyoxylic acid (CHOCOOH). In addition, plating deposition rate and film quality (elongation) in electroless copper plating
The suitable temperature of the plating solution when raising the temperature is around 50 to 80 ° C., and therefore, the plating solution is generally kept at a constant temperature (around 60 ° C.) in a constant temperature bath (plating solution circulation bath) equipped with a heating device. It is configured to circulate between a stored plating bath and a plating bath for plating.
【０００７】[0007]
【発明が解決しようとする課題】無電解銅めっきに使用
されるめっき液には還元剤が含まれているため、この還
元剤の副反応であるカニッツァーロ反応、すなわちホル
マリンやグリオキシル酸にあっては下記の反応が生じ
る。 ２ＨＣＨＯ＋ＯＨ−→ＣＨ３ＯＨ＋ＨＣＯＯ− ２ＣＨＯＣＯＯＨ＋２ＯＨ−→Ｃ２Ｏ４ ２−＋ＨＯＣＨ
２ＣＯＯＨ＋Ｈ２ＯSince the plating solution used for electroless copper plating contains a reducing agent, the Cannizzaro reaction which is a side reaction of the reducing agent, that is, formalin or glyoxylic acid, is not considered. The following reaction occurs: 2HCHO + OH - → CH 3 OH + HCOO - 2CHOCOOH + 2OH - → C 2 O 4 2- + HOCH
2 COOH + H 2 O
【０００８】そして、この反応を完全に抑制することが
不可能であるため、この反応によって生成された副生成
物がめっき液の純度や溶存酸素量を低下させ、めっき成
長速度に影響を与えてしまう。このため、無電解銅めっ
きは、管理しにくいめっき方法であるのが現状であっ
た。なお、カニッツァーロ反応に起因するめっき液の劣
化を防止するため、めっき液にメタノールを添加するこ
とが行われているが、この方法は、カニッツァーロ反応
そのものを抑制するものではなく、その効果には一定の
限界があった。Since it is impossible to completely suppress this reaction, the by-products generated by this reaction lower the purity and dissolved oxygen content of the plating solution and affect the plating growth rate. I will. For this reason, at present, electroless copper plating is a plating method that is difficult to control. In order to prevent the plating solution from deteriorating due to the Cannizzaro reaction, methanol is added to the plating solution.However, this method does not suppress the Cannizzaro reaction itself, and its effect is limited. There was a limit.
【０００９】本発明は上記事情に鑑みて為されたもの
で、カニッツァーロ反応そのものを極力抑制して、めっ
き液の寿命を延ばすとともに、めっき液の管理を容易と
した無電解銅めっき装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and provides an electroless copper plating apparatus that minimizes the Cannizzaro reaction itself, prolongs the life of a plating solution, and facilitates the management of the plating solution. The purpose is to:
【００１０】[0010]
【課題を解決するための手段】本発明の無電解銅めっき
装置は、基板を保持し該基板に無電解銅めっきを施すめ
っき処理槽と、内部にめっき液を貯め前記めっき処理槽
との間でめっき液を循環させるめっき液循環槽とを備
え、前記めっき処理槽内のめっき液の温度が前記めっき
液循環槽内のめっき液の温度よりも高くなるようにした
ことを特徴とする。According to the present invention, there is provided an electroless copper plating apparatus comprising: a plating bath for holding a substrate and performing electroless copper plating on the substrate; and a plating bath for storing a plating solution therein. And a plating solution circulating tank for circulating the plating solution, wherein the temperature of the plating solution in the plating treatment tank is higher than the temperature of the plating solution in the plating solution circulating tank.
【００１１】上記本発明によれば、上記カニッツァーロ
反応は、熱活性化過程で促進されていると考えられ、め
っき液の温度を低下させることで、この反応を抑制する
ことができる。そこで、めっき処理槽内のめっき液の温
度を基板のめっき浴の適温に、めっき液循環槽内のめっ
き液の温度を基板のめっき浴の適温より低い温度にする
ことで、通常、殆どの時間めっき液が保持されているめ
っき液循環槽内でのカニッツァーロ反応そのものを抑制
することができる。According to the present invention, the Cannizzaro reaction is considered to be accelerated in the heat activation process, and the reaction can be suppressed by lowering the temperature of the plating solution. Therefore, by setting the temperature of the plating solution in the plating bath to a temperature suitable for the plating bath of the substrate and the temperature of the plating solution in the circulation bath for the plating solution to a temperature lower than the optimal temperature of the plating bath for the substrate, usually, most of the time The Cannizzaro reaction itself in the plating solution circulation tank holding the plating solution can be suppressed.
【００１２】また、前記めっき処理槽内のめっき液の温
度と前記めっき液循環槽内のめっき液の温度の温度差
が、少なくとも１０℃以上であることを特徴とする。こ
れにより、めっき液循環槽内のめっき液の温度を基板の
めっき浴の適温から１０℃以上低下させることで、カニ
ッツァーロ反応の速度を半分以下に下げることができ
る。The temperature difference between the temperature of the plating solution in the plating tank and the temperature of the plating solution in the plating solution circulation tank is at least 10 ° C. or more. Thus, by lowering the temperature of the plating solution in the plating solution circulation tank from an appropriate temperature of the plating bath of the substrate by 10 ° C. or more, the speed of the Cannizzaro reaction can be reduced to half or less.
【００１３】また、前記めっき液循環槽から前記めっき
処理槽への往路に加熱装置が、復路に冷却装置がそれぞ
れ設けられていることを特徴とする。これにより、めっ
き液をめっき処理槽に入る直前に加熱装置で基板のめっ
き浴の適温まで加熱し、めっき液循環槽に戻る前に冷却
装置で冷却することができる。Further, a heating device is provided on an outward path from the plating solution circulation tank to the plating tank, and a cooling apparatus is provided on a return path. Thereby, the plating solution can be heated to an appropriate temperature of the plating bath of the substrate by the heating device immediately before entering the plating bath, and cooled by the cooling device before returning to the plating solution circulation bath.
【００１４】更に、対向式熱交換機を備え、この対向式
熱交換器の加熱側に前記めっき処理槽に入るめっき液
が、冷却側に前記めっき液循環槽に戻るめっき液がそれ
ぞれ流れるようにしたことを特徴とする。これにより、
めっき液の持つ熱量をめっき液の加熱及び冷却に有効に
利用して、エネルギの消費を最小限に抑えることができ
る。Further, a facing heat exchanger is provided, so that a plating solution entering the plating tank flows to a heating side of the facing heat exchanger, and a plating solution returning to the plating solution circulation tank flows to a cooling side. It is characterized by the following. This allows
The amount of heat of the plating solution can be effectively used for heating and cooling of the plating solution, thereby minimizing energy consumption.
【００１５】また、前記対向式熱交換器とめっき処理槽
とを結ぶ経路内に加熱装置が、対向式熱交換器とめっき
液循環槽とを結び経路内に冷却装置がそれぞれ設けられ
ていることを特徴とする。これにより、対向式熱交換器
による熱量の不足分を加熱装置及び冷却装置で補うこと
ができる。Further, a heating device is provided in a path connecting the opposed heat exchanger and the plating tank, and a cooling device is provided in the path connecting the opposed heat exchanger and the plating solution circulation tank. It is characterized by. This makes it possible to compensate for the shortage of heat by the opposed heat exchanger with the heating device and the cooling device.
【００１６】[0016]
【発明の実施の形態】以下、本発明の実施の形態の無電
解銅めっき装置について図面を参照して説明する。この
無電解銅めっき装置は、半導体基板の表面の溝に銅めっ
きを施して、銅層からなる配線層を形成するのに使用さ
れ、この工程を図１を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an electroless copper plating apparatus according to an embodiment of the present invention will be described with reference to the drawings. This electroless copper plating apparatus is used to form a wiring layer made of a copper layer by applying copper plating to a groove on the surface of a semiconductor substrate. This step will be described with reference to FIG.
【００１７】即ち、半導体基板Ｗには、図１（ａ）に示
すように、半導体素子が形成された半導体基板１上の導
電層１ａの上にＳｉＯ２からなる絶縁膜２が堆積され、
リソグラフィ・エッチング技術によりコンタクトホール
３と配線用の溝４が形成され、その上にＴｉＮ等からな
るバリア層５が形成されている。[0017] That is, in the semiconductor the substrate W, as shown in FIG. 1 (a), an insulating film 2 made of SiO 2 is deposited on a conductive layer 1a on a semiconductor substrate 1 on which semiconductor devices are formed,
A contact hole 3 and a wiring groove 4 are formed by lithography / etching technology, and a barrier layer 5 made of TiN or the like is formed thereon.
【００１８】そして、図１（ｂ）に示すように、前記半
導体基板Ｗの表面に銅めっきを施すことで、半導体基板
１のコンタクトホール３及び溝４内に銅を充填させると
ともに、絶縁膜２上に銅層６を堆積させる。その後、化
学的機械的研磨（ＣＭＰ）により、絶縁膜２上の銅層６
を除去して、コンタクトホール３および配線用の溝４に
充填させた銅層６の表面と絶縁膜２の表面とをほぼ同一
平面に研磨する。これにより、図１（ｃ）に示すように
銅層６からなる配線が形成される。Then, as shown in FIG. 1B, the surface of the semiconductor substrate W is plated with copper, so that the contact holes 3 and the grooves 4 of the semiconductor substrate 1 are filled with copper and the insulating film 2 is formed. A copper layer 6 is deposited thereon. Thereafter, the copper layer 6 on the insulating film 2 is formed by chemical mechanical polishing (CMP).
Is removed, and the surface of the copper layer 6 filled in the contact hole 3 and the wiring groove 4 and the surface of the insulating film 2 are polished to almost the same plane. As a result, a wiring made of the copper layer 6 is formed as shown in FIG.
【００１９】図２は、本発明の第１の実施の形態の無電
解銅めっき装置の概要を示すもので、同図に示すよう
に、このめっき装置には、半導体基板Ｗを保持し、めっ
き液１０を内部に導入して該半導体基板Ｗに無電解銅め
っきを施すめっき処理槽１１と、めっき液１０を貯め前
記めっき処理槽１１との間でめっき液１０を循環させる
めっき液循環槽１２とが備えられている。前記めっき液
１０には、還元剤として、例えば０．１ｍｏｌ／リット
ルのホルマリンが含まれている。FIG. 2 schematically shows an electroless copper plating apparatus according to a first embodiment of the present invention. As shown in FIG. A plating bath 11 for introducing the solution 10 into the inside to perform electroless copper plating on the semiconductor substrate W; and a plating solution circulation bath 12 for storing the plating solution 10 and circulating the plating solution 10 between the plating bath 11 And are provided. The plating solution 10 contains, for example, 0.1 mol / liter formalin as a reducing agent.
【００２０】前記めっき液循環槽１２とめっき処理槽１
１とは、循環経路を構成する往路１３と復路１４で結ば
れ、この往路１３には循環用ポンプ１５と加熱装置１６
が、復路１４には冷却装置１７がそれぞれ設けられてい
る。更に、前記めっき液循環槽１２の内部には、ここに
貯蔵しためっき液１０の温度を一定にするための熱交換
器１８が配置されている。The plating solution circulation tank 12 and the plating tank 1
1 is connected by a forward path 13 and a return path 14 constituting a circulation path, and the forward path 13 includes a circulation pump 15 and a heating device 16.
However, cooling devices 17 are provided on the return path 14 respectively. Further, inside the plating solution circulation tank 12, a heat exchanger 18 for keeping the temperature of the plating solution 10 stored therein constant.
【００２１】これにより、めっき液１０は、循環用ポン
プ１５の駆動に伴って、めっき処理槽１１内に順次送ら
れ、基板のめっき浴終了後にめっき液循環槽１２内に戻
される。この時、めっき処理槽１１内のめっき液１０の
温度Ｔ１が基板のめっき浴の適温である、例えば６０℃
前後となるように加熱装置１６で加熱される。一方、め
っき液循環槽１２内に貯められためっき液１０は、その
温度Ｔ２が、前記基板のめっき浴の適温より低温の、例
えば３０〜５０℃程度となるように冷却装置１７で冷却
されてめっき液循環槽１２に戻され、熱交換器１８で一
定の温度（例えば３０〜５０℃）に保たれるように構成
されている。As a result, the plating solution 10 is sequentially sent into the plating bath 11 with the driving of the circulation pump 15, and returned to the plating solution circulation bath 12 after the completion of the plating bath of the substrate. At this time, the temperature T 1 of the plating solution 10 in the plating bath 11 is appropriate temperature of the plating bath of the substrate, for example, 60 ° C.
It is heated by the heating device 16 so as to be before and after. On the other hand, the plating solution circulating tank 12 the plating solution 10 that has been accumulated in, the temperature T 2 is a temperature lower than an appropriate temperature of the plating bath of the substrate is cooled in the cooling device 17, as for example of the order of 30 to 50 ° C. Then, the heat is returned to the plating solution circulating tank 12 and is maintained at a constant temperature (for example, 30 to 50 ° C.) by the heat exchanger 18.
【００２２】例えばホルマリン等の還元剤の副反応であ
るカニッツァーロ反応は、熱活性化過程で促進されてお
り、めっき液１０の温度を１０℃程度低下させただけ
で、カニッツァーロ反応の反応速度が半分以下になると
考えられる。そのため、めっき液循環槽１２内でのめっ
き液１０の温度Ｔ２を基板のめっき浴の適温である６０
℃前後から、これより低温の３０〜５０℃程度にするこ
とで、めっき液循環槽１２内で生じるカニッツァーロ反
応そのものを抑制することができる。しかも、めっき液
１０は、めっき処理槽１１内に半導体基板Ｗを出入れし
ている間中、めっき液循環槽１２内に全て戻っていて、
殆どの時間めっき液循環槽１２内に存在しており、必要
な時のみ基板のめっき浴の適温まで加熱されるので、常
時めっきの適温の６０℃前後に保持されている場合と比
較して、カニッツァーロ反応を大幅に抑制することがで
きる。For example, the Cannizzaro reaction, which is a side reaction of a reducing agent such as formalin, is promoted in the heat activation process, and the reaction speed of the Cannizzaro reaction is reduced by half only by lowering the temperature of the plating solution 10 by about 10 ° C. It is considered that: Therefore, a suitable temperature of the temperature T 2 the plating bath of the substrate in the plating solution 10 in the plating solution circulating tank 12 60
By setting the temperature to around 30 to 50 ° C., which is lower than this, from around the temperature, the Cannizzaro reaction itself occurring in the plating solution circulation tank 12 can be suppressed. Moreover, the plating solution 10 has all returned to the plating solution circulating tank 12 while the semiconductor substrate W is being taken in and out of the plating treatment tank 11,
It is present in the plating solution circulation tank 12 for most of the time, and is heated to an appropriate temperature of the plating bath of the substrate only when necessary. The Cannizzaro reaction can be greatly suppressed.
【００２３】この実施の形態の無電解銅めっき装置にあ
っては、めっき液循環槽１２内に、例えば３０〜５０℃
に保持しためっき液１０を貯めておき、めっき処理槽１
１内に半導体基板Ｗを保持した後、めっき処理槽１１内
にめっき液１０を循環させて半導体基板Ｗにめっき処理
を施す。この時、めっきは、その適温の６０℃前後で行
われ、めっきを行う時以外は、めっき液１０は、例えば
３０〜５０℃に保たれて、カニッツァーロ反応が抑制さ
れる。In the electroless copper plating apparatus of this embodiment, for example, 30 to 50 ° C.
The plating solution 10 held in the tank is stored in the plating tank 1
After holding the semiconductor substrate W in 1, the plating solution 10 is circulated in the plating bath 11 to perform the plating process on the semiconductor substrate W. At this time, the plating is performed at a suitable temperature of about 60 ° C., and except when plating is performed, the plating solution 10 is kept at, for example, 30 to 50 ° C. to suppress the Cannizzaro reaction.
【００２４】図３は、本発明の第２の実施の形態の無電
解銅めっき装置を示すもので、このめっき装置は、対向
式熱交換器２０を備え、この対向式熱交換器２０の加熱
側２１を前記往路１３内に配置して該加熱側２１に前記
めっき処理槽１１に入るめっき液１０が流れ、冷却側２
２を前記復路１４内に配置して該冷却側２２に前記めっ
き液循環槽１２に戻るめっき液１０がそれぞれ流れるよ
うにするとともに、対向式熱交換器２０とめっき処理槽
１１とを結ぶ往路１３内に加熱装置２３を、対向式熱交
換器２０とめっき液循環槽１２とを結び復路１４内に冷
却装置２４をそれぞれ設けたものである。FIG. 3 shows an electroless copper plating apparatus according to a second embodiment of the present invention. This plating apparatus includes a facing heat exchanger 20 and heats the facing heat exchanger 20. The plating solution 10 entering the plating tank 11 flows through the heating side 21 on the heating side 21 and the cooling side 2 is disposed on the heating side 21.
2 is disposed in the return path 14 so that the plating solution 10 returning to the plating solution circulating tank 12 flows to the cooling side 22, and the forward path 13 connecting the opposed heat exchanger 20 and the plating tank 11. A heating device 23 is provided therein, and a cooling device 24 is provided in the return path 14 by connecting the facing heat exchanger 20 and the plating solution circulation tank 12.
【００２５】この実施の形態の無電解銅めっき装置によ
れば、めっき液１０の持つ熱量を対向式熱交換器２０を
介してめっき液１０の加熱及び冷却に有効に利用し、し
かも、対向式熱交換器２０による熱量の不足分を加熱装
置２３及び冷却装置２４で補うことで、エネルギ消費を
最小限に抑えることができる。According to the electroless copper plating apparatus of this embodiment, the amount of heat of the plating solution 10 is effectively used for heating and cooling of the plating solution 10 via the opposed heat exchanger 20, and the opposed type By supplementing the shortage of the heat quantity by the heat exchanger 20 with the heating device 23 and the cooling device 24, energy consumption can be minimized.
【００２６】[0026]
【発明の効果】以上説明したように、本発明によれば、
めっき処理槽内のめっき液の温度を基板のめっき浴の適
温に、めっき液循環槽内のめっき液の温度を基板のめっ
き浴の適温より低い温度にすることで、通常、殆どの時
間めっき液が保持されているめっき液循環槽内でのカニ
ッツァーロ反応そのものを抑制することができる。これ
により、めっき液の寿命を延ばすとともに、このめっき
液の組成維持等の管理を容易に行うことができる。As described above, according to the present invention,
By setting the temperature of the plating solution in the plating bath to the appropriate temperature for the plating bath on the substrate and the temperature of the plating solution in the circulation bath for the plating solution to a temperature lower than the optimal temperature for the plating bath on the substrate, the plating solution is usually used for most of the time. The Cannizzaro reaction itself in the plating solution circulating tank in which is maintained can be suppressed. As a result, the life of the plating solution can be extended, and management such as maintaining the composition of the plating solution can be easily performed.
【図１】本発明の無電解銅めっき装置によってめっきを
行う工程の一例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of a step of performing plating by an electroless copper plating apparatus of the present invention.
【図２】本発明の第１の実施の形態の無電解銅めっき装
置の概要を示す図である。FIG. 2 is a diagram showing an outline of an electroless copper plating apparatus according to a first embodiment of the present invention.
【図３】本発明の第２の実施の形態の無電解銅めっき装
置の概要を示す図である。FIG. 3 is a diagram showing an outline of an electroless copper plating apparatus according to a second embodiment of the present invention.
１０ めっき液 １１ めっき処理槽 １２ めっき液循環槽 １３ 往路 １４ 復路 １６，２３ 加熱装置 １７，２４ 冷却装置 ２０ 対向式熱交換器 Ｗ 半導体基板 DESCRIPTION OF SYMBOLS 10 Plating solution 11 Plating tank 12 Plating solution circulation tank 13 Outbound route 14 Inbound route 16, 23 Heating device 17, 24 Cooling device 20 Facing heat exchanger W Semiconductor substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 栗山 文夫 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 池上 徹真 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 奥山 修一 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 Ｆターム(参考） 4K022 AA05 BA08 DA01 DB06 DB07 DB24 DB26 4M104 AA01 BB00 BB04 BB30 DD07 DD16 DD53 EE08 EE15 FF09 FF13 FF22 FF27 GG13 HH01 HH02 HH08 HH14 5F033 HH11 HH33 JJ01 KK00 MM02 MM12 MM17 NN06 NN07 NN29 PP28 QQ06 QQ09 QQ48 RR04 WW03 XX03 XX05 XX06 XX13 XX33 XX34 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Fumio Kuriyama, Inventor 11-1 Haneda Asahimachi, Ota-ku, Tokyo Inside Ebara Corporation (72) Inventor Tetsuma Ikegami 11-1, Haneda Asahi-cho, Ota-ku, Tokyo Stock Company EBARA CORPORATION (72) Inventor Shuichi Okuyama 11-1 Haneda Asahimachi, Ota-ku, Tokyo F-term in EBARA CORPORATION (reference) 4K022 AA05 BA08 DA01 DB06 DB07 DB24 DB26 4M104 AA01 BB00 BB04 BB30 DD07 DD16 DD53 EE08 EE15 FF09 FF13 FF22 FF27 GG13 HH01 HH02 HH08 HH14 5F033 HH11 HH33 JJ01 KK00 MM02 MM12 MM17 NN06 NN07 NN29 PP28 QQ06 QQ09 QQ48 RR04 WW03 XX03 XX05 XX06 XX13 XX33 XX34
Claims (5)
施すめっき処理槽と、内部にめっき液を貯め前記めっき
処理槽との間でめっき液を循環させるめっき液循環槽と
を備え、 前記めっき処理槽内のめっき液の温度が前記めっき液循
環槽内のめっき液の温度よりも高くなるようにしたこと
を特徴とする無電解銅めっき装置。A plating bath for holding a substrate and applying electroless copper plating to the substrate; and a plating bath for storing a plating bath therein and circulating the plating bath between the plating bath and a plating bath. An electroless copper plating apparatus, wherein a temperature of a plating solution in the plating tank is higher than a temperature of a plating solution in the plating solution circulation tank.
前記めっき液循環槽内のめっき液の温度の温度差が、少
なくとも１０℃以上であることを特徴とする請求項１記
載の無電解銅めっき装置。2. The electroless apparatus according to claim 1, wherein a temperature difference between a temperature of the plating solution in the plating bath and a temperature of the plating solution in the plating solution circulating bath is at least 10 ° C. or more. Copper plating equipment.
槽への往路に加熱装置が、復路に冷却装置がそれぞれ設
けられていることを特徴とする請求項１または２記載の
無電解銅めっき装置。3. The electroless copper plating apparatus according to claim 1, wherein a heating device is provided on a forward path from the plating solution circulation tank to the plating tank, and a cooling device is provided on a return path. .
換器の加熱側に前記めっき処理槽に入るめっき液が、冷
却側に前記めっき液循環槽に戻るめっき液がそれぞれ流
れるようにしたことを特徴とする請求項１または２記載
の無電解銅めっき装置。4. An opposed heat exchanger, wherein a plating solution entering the plating tank flows on a heating side of the opposed heat exchanger, and a plating solution returning to the plating solution circulation tank flows on a cooling side. The electroless copper plating apparatus according to claim 1 or 2, wherein:
結ぶ経路内に加熱装置が、前記対向式熱交換器とめっき
液循環槽とを結ぶ経路内に冷却装置がそれぞれ設けられ
ていることを特徴とする請求項４記載の無電解銅めっき
装置。5. A heating device is provided in a path connecting the opposed heat exchanger and the plating tank, and a cooling device is provided in a path connecting the opposed heat exchanger and the plating solution circulation tank. The electroless copper plating apparatus according to claim 4, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32846098A JP3712548B2 (en) | 1998-11-18 | 1998-11-18 | Electroless copper plating apparatus and electroless copper plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32846098A JP3712548B2 (en) | 1998-11-18 | 1998-11-18 | Electroless copper plating apparatus and electroless copper plating method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005213228A Division JP2005307356A (en) | 2005-07-22 | 2005-07-22 | Electroless copper-plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000144438A true JP2000144438A (en) | 2000-05-26 |
| JP3712548B2 JP3712548B2 (en) | 2005-11-02 |
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|---|---|---|---|
| JP32846098A Expired - Lifetime JP3712548B2 (en) | 1998-11-18 | 1998-11-18 | Electroless copper plating apparatus and electroless copper plating method |
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