JP2000133987A - Glass with electrically conductive film - Google Patents

Glass with electrically conductive film

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Publication number
JP2000133987A
JP2000133987A JP30689798A JP30689798A JP2000133987A JP 2000133987 A JP2000133987 A JP 2000133987A JP 30689798 A JP30689798 A JP 30689798A JP 30689798 A JP30689798 A JP 30689798A JP 2000133987 A JP2000133987 A JP 2000133987A
Authority
JP
Japan
Prior art keywords
glass
film
conductive film
softening point
low melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30689798A
Other languages
Japanese (ja)
Inventor
Masaaki Katano
正昭 片野
Haruki Kuramasu
春喜 倉増
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP30689798A priority Critical patent/JP2000133987A/en
Publication of JP2000133987A publication Critical patent/JP2000133987A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To use a single-plate glass having an electrically conductive film without degradation or deterioration of a conductive film, by coating a glass material thick film comprising low melting point glass the having the value higher than a specified value of film thickness on the surface of the glass having an electrically conductive film. SOLUTION: If glass having an ingredient similar to that of base glass is used as glass material thick film and it is baked at the temperature exceeding its softening point to fuse the glass, the temperature of the base glass exceeds the softening point and the glass is softened deformed too, and a metal film can also be oxidized and deteriorated. Accordingly, low melting point glass having the softening point of 600 deg.C is suitable for use. A glass frit in which a particle diameter is 20 μm or lower is used, it is dispersed in a polymer solution to knead paste, and the paste is applied on a glass plate covered with a conductive film by a means such as a flow coat method or screen printing or the like so as to form a film having thickness of 2 μm after baking. Then, after drying, it is baked at a temperature higher than the softening point of the low melting point glass and lower than the softening point of a glass plate.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、Low-Eガラス(低
放射性膜付きガラス)や電磁遮蔽ガラス等、金属膜等の
導電性膜を膜付けしたガラス板に関し、建築物や車両・
輸送機等の窓材や間仕切り材として採用される透明な導
電性膜付きガラスに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass sheet provided with a conductive film such as a metal film, such as a low-E glass (a glass with a low radiation film) and an electromagnetic shielding glass, and relates to a building, a vehicle, and the like.
The present invention relates to a glass with a transparent conductive film used as a window material or a partition material of a transport machine or the like.

【0002】[0002]

【従来技術および解決すべき課題】Low-Eガラスや電磁
遮蔽ガラス等、金属膜を含む導電性膜を膜付けしたガラ
ス板は、建築物や車両・輸送機等の窓材として広く採用
されている。前記導電性膜は、通常スパッタリング法等
のPVD法やCVD法により、2以上の多層薄膜とし、
その最上層には金属酸化物、金属窒化物、金属炭化物、
金属窒素酸化物等の金属化合物膜を配し、金属膜と雰囲
気中の湿分や有害成分との接触を絶ち、その変質、劣化
を防ぐべく設計される。しかし、前記成膜手段によれば
膜厚1μm を越える厚膜は形成し難く、他方1μm 以下
であると長期の使用において金属膜が変質、劣化し易
い。
2. Description of the Related Art Glass plates coated with a conductive film including a metal film, such as low-E glass and electromagnetic shielding glass, have been widely used as window materials for buildings, vehicles, and transport equipment. I have. The conductive film is usually formed into two or more multilayer thin films by a PVD method such as a sputtering method or a CVD method,
The top layer is metal oxide, metal nitride, metal carbide,
A metal compound film such as a metal nitrogen oxide is provided, which is designed to prevent the metal film from coming into contact with moisture and harmful components in the atmosphere, and to prevent deterioration and deterioration thereof. However, according to the film forming means, it is difficult to form a thick film having a film thickness of more than 1 μm.

【0003】前記弊害を排除するために、通例、導電性
膜付きガラス板を一方のガラス板とし、他方のガラス板
との複層ガラス構造としたり、合せガラス構造としたり
し、導電性膜をその内側に配する。しかしながら、これ
ら複層ガラス構造や合せガラス構造とするのは、組立・
製造に手間を要し、そのコストも多大である。また、特
に複層ガラスの場合、施工も単板の場合と異なり、予め
複層ガラスの厚みに応じて枠の厚み(前後幅)を広めた
り、あるいは、いわゆるアタッチメント枠を施す等コス
トを更に増大する。
[0003] In order to eliminate the above-mentioned adverse effects, a glass plate with a conductive film is usually used as one glass plate and a double-layer glass structure with the other glass plate or a laminated glass structure. Place it inside. However, these multilayer glass structures and laminated glass structures are not
It takes time and effort to manufacture, and its cost is enormous. In addition, especially in the case of double glazing, the construction is also different from the case of single veneer, and the cost (for example, increasing the thickness (front and rear width) of the frame according to the thickness of the double glazing in advance, or applying a so-called attachment frame, further increases the cost). I do.

【0004】本発明は、前記不都合点を解消し、単板で
も導電性膜(金属膜)が変質、劣化することなく使用で
きるようにした透明な導電性膜付きガラスを提供するこ
とを目的とする。
An object of the present invention is to provide a glass with a transparent conductive film, which solves the above-mentioned disadvantages and can be used without deteriorating or deteriorating the conductive film (metal film) even in a single plate. I do.

【0005】[0005]

【課題を解決するための手段】本発明は、ガラス板の少
なくとも片面に、金属膜を含む複数の薄膜層を形成し、
最外層に金属化合物膜を配した導電性膜付きガラスにお
いて、更にその表面に、膜厚2μm 以上の低融点ガラス
よりなるガラス質厚膜を被着してなる導電性膜付きガラ
スである。
According to the present invention, a plurality of thin film layers including a metal film are formed on at least one surface of a glass plate,
This is a glass with a conductive film in which a metal compound film is disposed on the outermost layer, and further a glassy thick film made of a low-melting glass having a film thickness of 2 μm or more is applied on the surface thereof.

【0006】前記において、ガラス質厚膜が、低融点ガ
ラスにセラミック微粒を散在させた防眩性の厚膜である
ことが望ましい。
In the above, it is desirable that the vitreous thick film is an antiglare thick film in which ceramic fine particles are dispersed in low melting point glass.

【0007】なお、導電性膜付きガラスの一態様とし
て、導電性膜の周縁部に導電テープを接着させて導電サ
ッシと導通させるべく、導電性膜の周縁部を残してガラ
ス質厚膜を被着し、電磁遮蔽用ガラスとすることもでき
る。
[0007] In one embodiment of the glass with a conductive film, a thick vitreous film is coated leaving a peripheral portion of the conductive film so that a conductive tape is adhered to the peripheral portion of the conductive film so as to conduct the conductive sash. It can also be used as an electromagnetic shielding glass.

【0008】[0008]

【実施の形態】ガラス板としては、特定するものではな
いが、安価で大量に生産されるソーダ石灰シリカ系ガラ
ス、あるいはアルカリ苦土石灰アルミノ珪酸系ガラス等
が好適である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS As a glass plate, although not specified, a soda-lime-silica-based glass or an alkali-magnesium-lime aluminosilicate-based glass which is inexpensive and mass-produced is suitable.

【0009】本発明における薄膜は、膜厚 100nm以下程
度の膜をいい、多層薄膜とは前記薄膜が2層以上積層し
た膜をいう。金属膜としては、例えば金、銀、銅、白
金、ロジウム、パラジウム、アルミニウム、亜鉛、それ
らの合金等公知の導電性に富んだ金属膜が採用でき、金
属化合物膜としては、金属酸化物、金属窒化物、金属炭
化物、金属窒素酸化物など、例えば酸化珪素、酸化アル
ミニウム、酸化亜鉛、酸化チタン、酸化ジルコニウム、
酸化錫、酸化インジウム、それらの複合酸化物、窒化珪
素、窒化アルミニウム、窒化チタンや、窒化炭化珪素酸
化物等の複合化合物など公知の金属化合物膜が採用でき
る。
In the present invention, the thin film refers to a film having a thickness of about 100 nm or less, and the multilayer thin film refers to a film obtained by laminating two or more thin films. As the metal film, for example, a well-known conductive metal film such as gold, silver, copper, platinum, rhodium, palladium, aluminum, zinc, or an alloy thereof can be used. As the metal compound film, metal oxide, metal Nitrides, metal carbides, metal nitrogen oxides and the like, for example, silicon oxide, aluminum oxide, zinc oxide, titanium oxide, zirconium oxide,
Known metal compound films such as tin oxide, indium oxide, composite oxides thereof, silicon nitride, aluminum nitride, titanium nitride, and composite compounds such as silicon nitride oxide can be used.

【0010】多層薄膜の例としては、 G(ガラス)\銀膜\酸化チタン膜 G\銀膜\アルミニウム−亜鉛合金膜\酸化アルミニウ
ム膜 G\酸化亜鉛膜\銀膜\亜鉛膜\酸化亜鉛膜\窒化珪素
膜 G\酸化錫膜\銀膜\アルミニウム−亜鉛合金膜\アル
ミニウム−亜鉛酸化物膜\酸化亜鉛膜\銀膜\アルミニ
ウム−亜鉛合金膜\アルミニウム−亜鉛酸化物膜\酸化
亜鉛膜 等、これらに限らず多様な組合せのものがある。
Examples of the multilayer thin film include: G (glass) \silver film\titanium oxide film G\silver film\aluminum-zinc alloy film\aluminum oxide film G\zinc oxide film\silver film\zinc film\zinc oxide film珪 素 Silicon nitride film G\Tin oxide film\Silver film\Aluminum-zinc alloy film\Aluminum-zinc oxide film\Zinc oxide film\Silver film\Aluminum-zinc alloy film\Aluminum-zinc oxide film\Zinc oxide film etc. However, not limited to these, there are various combinations.

【0011】ガラス質厚膜としては、通常のガラスは軟
化点が 700℃以上であり、例えばソーダ石灰シリカ系ガ
ラスにおいては軟化点 720℃前後であるのに対し、軟化
点 600℃未満で、熱膨張係数が先述の基板ガラスに近似
した(おおよそ70〜90×10-7/℃である)低融点ガラス
を採用するのが好ましく、広範囲に使用されているPbO
系の低融点ガラス以外にもBi2O3系、ZnO 系等無鉛系の
ガラスが採用できる。
As a vitreous thick film, ordinary glass has a softening point of 700 ° C. or higher. For example, a soda-lime-silica glass has a softening point of about 720 ° C., whereas a softening point of less than 600 ° C. It is preferable to use a low-melting glass having an expansion coefficient similar to that of the aforementioned substrate glass (approximately 70 to 90 × 10 −7 / ° C.), and PbO widely used
Lead-free glass such as Bi 2 O 3 and ZnO can be used in addition to the low melting glass.

【0012】ガラス質厚膜用として、例えば基板ガラス
に近似した成分組成のガラスを用いた場合には、該ガラ
スを融着させるべくその軟化点以上で焼付けした場合、
基板ガラスにおいても軟化点を超えて軟化変形し、とき
に金属膜も酸化、劣化する恐れがある。従って軟化点 6
00℃以下の低融点ガラスが好適である。
When a glass having a component composition similar to that of a substrate glass is used for a vitreous thick film, for example, when the glass is baked at a temperature higher than its softening point in order to fuse the glass,
The substrate glass may be softened and deformed beyond the softening point, and the metal film may sometimes be oxidized and deteriorated. Therefore softening point 6
A glass having a low melting point of not higher than 00 ° C. is preferred.

【0013】勿論、低融点ガラスは耐候性、耐久性も勘
案して採用するもので、例えばPbO系においては、SiO2
10wt%以下、B2O3 15〜25wt%、Al2O3 10wt%以下、Z
nO5〜15wt%、PbO 55〜75wt%、CaO 、MgO 、 SrO また
はBaO 等の2価金属酸化物を5wt%以下含み、軟化点が
500〜 590℃、熱膨張係数が75〜90×10-7/℃のものが
推奨できる。
Of course, the low-melting glass is adopted in consideration of weather resistance and durability. For example, in the case of PbO-based glass, SiO 2 is used.
To 10wt%, B 2 O 3 15~25wt%, Al 2 O 3 10wt% or less, Z
Contains 5 to 15 wt% of nO5, 55 to 75 wt% of PbO, 5 wt% or less of divalent metal oxides such as CaO, MgO, SrO or BaO, and has a softening point.
Those having a thermal expansion coefficient of 500 to 590 ° C and a thermal expansion coefficient of 75 to 90 × 10 -7 / ° C can be recommended.

【0014】前記低融点ガラスフリットは粒径20μm 以
下程度とし、それをポリマー溶液中に分散させてペース
トを調製したうえで、フローコート法、スピンコート
法、刷毛塗り法、あるいはスクリーン印刷等公知の手段
で、焼付け後の膜厚が2μm 以上、好適には4μm 以上
になるように、前記導電性膜を施したガラス板上に塗布
し、次いで乾燥後、低融点ガラスの軟化点以上、但しガ
ラス板の軟化点以下の温度で焼成する。
The low-melting glass frit has a particle size of about 20 μm or less, and is dispersed in a polymer solution to prepare a paste. Then, a known method such as flow coating, spin coating, brush coating, or screen printing is used. Means, apply on the glass plate provided with the conductive film so that the film thickness after baking becomes 2 μm or more, preferably 4 μm or more, and then, after drying, the softening point of the low melting point glass or more, Firing at a temperature below the softening point of the plate.

【0015】前記膜厚は2μm 以上とすることにより、
導電性膜、特に金属膜の長期使用における劣化を抑制で
きる。他方20μm を超えても、それ以上の作用効果を発
現するものではなく、従って20μm 、好適には10μm を
上限とすべきである。
By setting the film thickness to 2 μm or more,
Deterioration of the conductive film, particularly the metal film, during long-term use can be suppressed. On the other hand, if it exceeds 20 μm, no further effect is exhibited, and therefore the upper limit should be 20 μm, preferably 10 μm.

【0016】電磁遮蔽ガラスとする場合は、ガラス板に
導電性膜を施した後、ガラス板の前記膜面周縁部の幅約
10mm程度を粘着テープでマスキングし、前記同様に低融
点ガラスフリットを塗布し、乾燥後粘着テープを剥離
し、焼成するようにする。
In the case of using an electromagnetic shielding glass, a conductive film is formed on a glass plate, and then a width of a peripheral portion of the film surface of the glass plate is reduced.
About 10 mm is masked with an adhesive tape, a low melting glass frit is applied in the same manner as described above, and after drying, the adhesive tape is peeled off and baked.

【0017】なお、焼成後徐冷すればよいが、あるいは
風冷等により急冷すれば強化ガラスとすることもでき
る。
It is to be noted that the material may be gradually cooled after firing, or it may be tempered by rapid cooling by air cooling or the like.

【0018】前記低融点ガラスよりなるガラス質厚膜に
は、無機質のフィラー、例えばシリカ(石英)、アルミ
ナ(コランダム)、ジルコニア(バッデライト)等の0.
1 〜1μm φ程度の微粉を散在させることにより、耐候
性、耐久性を更に向上させ、また、それにより表面粗さ
0.1μm 〜1μm 以下程度の光散乱性の膜とすることが
でき、例えば入射太陽光を散乱させて防眩性や意匠性を
付与することができる。フィラーとしてセリア、チタニ
ア(ルチル、アナターゼ)や亜鉛華等を採用すれば紫外
線を吸収し、その侵入を抑制でき、酸化クロム、酸化
鉄、酸化コバルト等を採用すれば赤外線を吸収し、かつ
グリーン、ブルー、ブロンズ、その他の着色を与えて美
装性を醸し出すこともできる。なお、フィラーのガラス
質厚膜中の混入量は、前記作用を発現すべくフィラーお
よびガラスの和 100wt%に対し10wt%以上とし、他方、
ガラス質厚膜のガラス基板(導電性膜)との密着性を阻
害することがないよう30wt%以下とするもので、上記を
勘案し、ペースト調製時に予め混入割合を設定する。以
下具体的実施例により本発明を詳述する。
The vitreous thick film made of the low melting point glass may contain an inorganic filler such as silica (quartz), alumina (corundum), or zirconia (baddelite).
The weather resistance and durability are further improved by scattering fine powder of about 1 to 1 μm φ, and the surface roughness is thereby improved.
A light-scattering film having a thickness of about 0.1 μm to 1 μm or less can be provided. For example, it can provide antiglare properties and design properties by scattering incident sunlight. If ceria, titania (rutile, anatase) or zinc white is used as a filler, ultraviolet rays can be absorbed and its invasion can be suppressed. If chromium oxide, iron oxide, cobalt oxide, etc. are used, infrared rays can be absorbed and green, Blue, bronze, and other colors can be added to enhance the appearance. The amount of the filler mixed in the vitreous thick film is set to 10 wt% or more with respect to the total of 100 wt% of the filler and the glass in order to exhibit the above-mentioned effect.
The content is set to 30 wt% or less so as not to hinder the adhesion to the vitreous thick glass substrate (conductive film). In consideration of the above, the mixing ratio is set in advance when preparing the paste. Hereinafter, the present invention will be described in detail with reference to specific examples.

【0019】[0019]

【実施例】クリアーなソーダ石灰シリカ系のフロート板
ガラスの片面全面に導電性膜を形成し、さらにその周縁
部幅約10mmを残して、低融点ガラスフリット(或いはさ
らにフリットにセラミック微粉を10wt%混在させたも
の)の樹脂ペーストを塗布し、乾燥後焼成、徐冷して、
低融点ガラスよりなるガラス質厚膜を被着した電磁遮蔽
ガラスを作製した。
[Example] A conductive film is formed on the entire surface of a clear soda-lime-silica-based float plate glass, and a low melting point glass frit (or 10% by weight of ceramic fine powder is further mixed in the frit) while leaving a peripheral width of about 10 mm. Is applied), dried, baked, gradually cooled,
Electromagnetic shielding glass having a glassy thick film made of low melting point glass was prepared.

【0020】〔導電性膜の形成〕各実施例、比較例とも
共通で、サイズ 350mm×250mm(5mm厚)、可視光透過率
90%(ヘーズ値は殆ど0%である)のものを採用し、そ
の片面にスパッタリング法により7層の導電性膜を形成
した。導電性膜は、ガラス板側より順次、酸化亜鉛膜
(膜厚30nm)、銀膜(膜厚40nm)、アルミニウム−亜鉛
膜(膜厚5nm)、酸化亜鉛膜(膜厚30nm)、銀膜(膜厚
40nm)、アルミニウム−亜鉛膜(膜厚5nm)、酸化亜鉛
膜(膜厚30nm)の層構成とした。
[Formation of Conductive Film] The size is 350 mm × 250 mm (5 mm thick), the transmittance of visible light is common to each of the examples and comparative examples.
90% (haze value is almost 0%) was adopted, and seven conductive films were formed on one surface thereof by a sputtering method. The conductive film is, in order from the glass plate side, a zinc oxide film (thickness 30 nm), a silver film (thickness 40 nm), an aluminum-zinc film (thickness 5 nm), a zinc oxide film (thickness 30 nm), and a silver film (thickness 30 nm). Film thickness
40 nm), an aluminum-zinc film (thickness: 5 nm), and a zinc oxide film (thickness: 30 nm).

【0021】なお、表面抵抗は4短針の表面抵抗測定素
子による測定で2.0Ω/□であり、米国ミル規格 MIL−
STD 285 に則る測定法により、0.1MHz〜20GHz における
平均電磁遮蔽性能は−35dBであり、JIS R 3106に則る測
定法で、垂直放射率は0.03であった。
The surface resistance is 2.0 Ω / □ measured by a surface resistance measuring element of a four-hand hand,
The average electromagnetic shielding performance at 0.1 MHz to 20 GHz was −35 dB according to the measurement method according to STD 285, and the vertical emissivity was 0.03 according to the measurement method according to JIS R 3106.

【0022】前記電磁波における増幅または減衰率を示
す単位‘dB’は、+が増幅を、−が減衰(遮蔽側)を示
すもので、マイナス数値が高い程減衰(遮蔽)性能が高
いことをあらわす。
In the unit 'dB' indicating the amplification or attenuation rate of the electromagnetic wave, + indicates amplification, and-indicates attenuation (shielding side). The higher the minus value, the higher the attenuation (shielding) performance. .

【0023】〔ガラス質厚膜の形成〕低融点ガラスフリ
ットとして、先に記載の成分範囲のSiO2−B2O3−PbO −
ZnO系ガラスであって、軟化点 580℃、熱膨張係数約70
×10ー7/℃の、平均粒径2μm のものを採用した。
[Formation of Vitreous Thick Film] As a low melting glass frit, SiO 2 —B 2 O 3 —PbO—
A ZnO-based glass with a softening point of 580 ° C and a coefficient of thermal expansion of about 70
An average particle size of × 10−7 / ° C. and an average particle size of 2 μm was employed.

【0024】防眩性を付与する場合は、混入するセラミ
ック微粉としてシリカ(石英)、アルミナ(コランダ
ム)を準備した。シリカは平均粒径 0.3μm (シリカA
という)、および平均粒径 0.5μm (シリカB という)
の2種類、アルミナは平均粒径1μm のものを採用し
た。
For imparting antiglare properties, silica (quartz) and alumina (corundum) were prepared as ceramic fine powder to be mixed. Silica has an average particle size of 0.3 μm (silica A
), And average particle size 0.5μm (Silica B)
And alumina having an average particle diameter of 1 μm was used.

【0025】低融点ガラスフリット、あるいは低融点ガ
ラスフリットとセラミック微粉を所定割合で配合したも
のをセルロースポリマーおよびアルコール系分散媒から
なるペースト原液に混入し、ボールミルによって充分撹
拌・分散してペーストを調製した。
A low-melting glass frit or a mixture of a low-melting glass frit and a ceramic fine powder in a predetermined ratio is mixed into a paste stock solution comprising a cellulose polymer and an alcohol-based dispersion medium, and the mixture is sufficiently stirred and dispersed by a ball mill to prepare a paste. did.

【0026】前記導電性膜の周縁部幅10mmに粘着テープ
を貼着したうえで、膜面上に前記ペーストを流延し、バ
ーコーターにより焼付け時の膜厚を勘案して膜厚調製
し、 150℃で10分間加熱乾燥させた。前記テープを剥離
後、基板のガラス板温度が 630℃に昇温するように加熱
プログラミングされた焼成炉に配置し、 630℃で10分保
持後降温させることにより、電磁遮蔽ガラスを完成し
た。なお、条件を表1に示す。
After attaching an adhesive tape to the peripheral edge width of the conductive film of 10 mm, the paste is cast on the film surface, and the film thickness is adjusted in consideration of the film thickness at the time of baking by a bar coater. It was dried by heating at 150 ° C. for 10 minutes. After the tape was peeled off, it was placed in a baking furnace that was heated and programmed so that the temperature of the glass plate of the substrate was raised to 630 ° C., and was held at 630 ° C. for 10 minutes and then cooled to complete the electromagnetic shielding glass. Table 1 shows the conditions.

【0027】〔試験方法〕電磁遮蔽ガラスの光学特性に
おいて、 JIS K 7105(プラスチックの光学的特性試験方
法)に基づき可視光透過率、ヘーズ値を求めた。
[Test Method] As for the optical characteristics of the electromagnetic shielding glass, the visible light transmittance and the haze value were determined based on JIS K 7105 (Test method for optical characteristics of plastics).

【0028】また、MIL −STD 285 に基づき0.1MHz〜1
GHz の電磁遮蔽性能を測定し、先のガラス質厚膜を施さ
ない場合の平均電磁遮蔽性能−35dBに対し、1dB以内の
変動に対しては、変化が‘殆どなし’=合格、1dB超
過、2dB以内の変動に対しては、変化が‘若干あり’、
それを越える変動に対しては、変化が‘顕著’として評
価した。
Further, based on MIL-STD 285, 0.1 MHz to 1
The electromagnetic shielding performance in GHz was measured, and the average electromagnetic shielding performance without the vitreous thick film was -35 dB. For fluctuations within 2dB, there is a 'slight' change,
For fluctuations beyond that, the change was evaluated as 'significant'.

【0029】更に、JIS A 1415に基づき3000時間の促進
耐候試験を行い、外観上膜の変色(変質、劣化)がない
ものを‘異常なし’=合格で評価し、それ以外は不合格
とした。
Further, an accelerated weathering test for 3,000 hours was performed based on JIS A 1415, and those having no discoloration (deterioration or deterioration) of the film on the external appearance were evaluated as “no abnormality” = pass, and the others were rejected. .

【0030】結果を表1に示す。表から明らかなとお
り、フィラーを混入しない実施例1においては、可視光
透過率、電磁遮蔽性能ともガラス質厚膜を被着しない比
較例1と遜色なく、また促進耐候試験において異常は認
められなかった。フィラーを混入した実施例2〜4は、
可視光透過率の著しい低下はないにもかかわらずヘーズ
値が高く、防眩性に富むことが判る。なお、電磁遮蔽性
能は比較例1と遜色なく、促進耐候試験において実施例
1同様異常は認められない。
The results are shown in Table 1. As is clear from the table, in Example 1 in which no filler was mixed, the visible light transmittance and the electromagnetic shielding performance were not inferior to Comparative Example 1 in which no vitreous thick film was adhered, and no abnormality was observed in the accelerated weathering test. Was. In Examples 2 to 4 in which a filler was mixed,
It can be seen that the haze value is high even though the visible light transmittance is not remarkably reduced, and the antiglare property is rich. In addition, the electromagnetic shielding performance is not inferior to Comparative Example 1, and no abnormality is observed in the accelerated weathering test as in Example 1.

【0031】比較例2はガラス質厚膜の膜厚が不充分で
あり、促進耐候試験において導電性膜の一部に変色が認
められる。なお、実施例2については、JIS R 3106に基
づき放射率を測定したところ0.03と、ガラス質厚膜を形
成する前の試料(比較例1)と全く変わりがなく、また
表1から明らかなように電磁遮蔽性能も殆ど変化してい
ない。この傾向から、他の実施例においても同様に放射
率において変化がないものと推察される。
In Comparative Example 2, the thickness of the vitreous thick film was insufficient, and discoloration was observed in a part of the conductive film in the accelerated weathering test. As for Example 2, the emissivity was measured based on JIS R 3106, which was 0.03, which was completely the same as the sample before forming the vitreous thick film (Comparative Example 1). In addition, the electromagnetic shielding performance hardly changed. From this tendency, it is inferred that there is no change in the emissivity in the other examples.

【0032】 〔表1〕条件および測定結果 条 件 結 果 実施例 低融点カ"ラス層 可視光 ヘース"値 電磁遮蔽 促進耐候 比較例 膜厚 粗さ フィラー種類 透過率 性能 試験 重量割合 (変化: (μm)(μm)(重量部) (%) (%) △dB) 実施例1 フィラー無し 2 −(平滑) 88 5 殆どなし 異常なし 実施例2 シリカA 3 0.3 15 80 70 殆どなし 異常なし 実施例3 シリカB 3 0.5 15 78 80 殆どなし 異常なし 実施例4 アルミナ 5 0.7 15 70 88 殆どなし 異常なし 参考例1 カ"ラス板のみ(厚み5mm) 90 − − − 比較例1 カ"ラス板に導電性膜のみ 膜はまだら 形成 70 0.2 基準 状に変色 比較例2 フィラー無し 膜は周縁部 0.7 −(平滑) 90 1 殆どなし より変色 [Table 1] Conditions and measurement results Condition Result Example Low melting point glass layer Visible light Haze value Electromagnetic shielding Accelerated weathering Comparative example Film thickness Roughness Filler type Transmittance Performance test Weight ratio (change: (μm) (μm) (parts by weight) (%) (%) △ dB) Example 1 No filler 2-(Smooth) 88 5 Almost none No abnormality Example 2 Silica A 3 0.3 15 80 70 Almost none No abnormality Example 3 Silica B 3 0.5 15 78 80 Almost none No abnormality Example 4 Alumina 5 0.7 15 70 88 Almost none No abnormality Reference example 1 Only crow plate (5mm thick) 90 ---Comparative Example 1 Only conductive film on glass plate Mottled film Forming 70 0.2 Discolored to the reference state Comparative Example 2 No filler Film is on the periphery 0.7-(smooth) 90 1 Almost none Discoloration

【0033】[0033]

【発明の効果】本発明によれば、ガラス質厚膜を被着し
たことにより、単板でも導電性膜(金属膜)が変質、劣
化することなく使用でき、更に前記ガラス質厚膜に、防
眩性、あるいは更に紫外線遮断性、着色性その他機能性
を付与することもできるという効果を奏する。
According to the present invention, since a thick vitreous film is applied, a conductive film (metal film) can be used without deterioration or deterioration even in a single plate. An effect of being able to impart antiglare properties, or further, ultraviolet blocking properties, coloring properties, and other functionalities can be obtained.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】ガラス板の少なくとも片面に、金属膜を含
む複数の薄膜層を形成し、最外層に金属化合物膜を配し
た導電性膜付きガラスにおいて、更にその表面に、膜厚
2μm 以上の低融点ガラスよりなるガラス質厚膜を被着
してなることを特徴とする導電性膜付きガラス。
1. A glass with a conductive film in which a plurality of thin film layers including a metal film are formed on at least one surface of a glass plate, and a metal compound film is disposed on the outermost layer. A glass with a conductive film, comprising a glassy thick film made of a low melting point glass.
【請求項2】ガラス質厚膜が、低融点ガラスにセラミッ
ク微粒を散在させた防眩性の厚膜であることを特徴とす
る請求項1記載の導電性膜付きガラス。
2. The glass with a conductive film according to claim 1, wherein the vitreous thick film is an antiglare thick film in which ceramic particles are dispersed in low melting glass.
【請求項3】導電性膜の周縁部を残してガラス質厚膜を
被着してなる電磁遮蔽用ガラスであることを特徴とする
請求項1または2記載の導電性膜付きガラス。
3. The glass with a conductive film according to claim 1, wherein the glass is a glass for electromagnetic shielding formed by applying a vitreous thick film while leaving a peripheral portion of the conductive film.
JP30689798A 1998-10-28 1998-10-28 Glass with electrically conductive film Pending JP2000133987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30689798A JP2000133987A (en) 1998-10-28 1998-10-28 Glass with electrically conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30689798A JP2000133987A (en) 1998-10-28 1998-10-28 Glass with electrically conductive film

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Publication Number Publication Date
JP2000133987A true JP2000133987A (en) 2000-05-12

Family

ID=17962585

Family Applications (1)

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Country Link
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002271086A (en) * 2001-03-08 2002-09-20 Sumitomo Chem Co Ltd Electromagnetic wave shield plate and manufacturing method therefor
WO2008102822A1 (en) 2007-02-20 2008-08-28 Fujifilm Corporation Polymer material containing ultraviolet absorbent
WO2009022736A1 (en) 2007-08-16 2009-02-19 Fujifilm Corporation Heterocyclic compound, ultraviolet ray absorbent, and composition comprising the ultraviolet ray absorbent
JP2012219007A (en) * 2011-04-14 2012-11-12 Asahi Glass Co Ltd Heat-ray reflecting glass including heat insulation protection film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002271086A (en) * 2001-03-08 2002-09-20 Sumitomo Chem Co Ltd Electromagnetic wave shield plate and manufacturing method therefor
JP4668438B2 (en) * 2001-03-08 2011-04-13 住友ゴム工業株式会社 Electromagnetic wave shield plate and manufacturing method thereof
WO2008102822A1 (en) 2007-02-20 2008-08-28 Fujifilm Corporation Polymer material containing ultraviolet absorbent
WO2009022736A1 (en) 2007-08-16 2009-02-19 Fujifilm Corporation Heterocyclic compound, ultraviolet ray absorbent, and composition comprising the ultraviolet ray absorbent
JP2012219007A (en) * 2011-04-14 2012-11-12 Asahi Glass Co Ltd Heat-ray reflecting glass including heat insulation protection film

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