JP2000125202A - Solid-state image pickup device, image sensor equipped with the same and its drive method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce dark current regardless of the drive speed and high and low of an environment temperature and to obtain a high quality image with a high S/N by subtracting compensation dark charge that is almost the same as dark charge transferred by a charge transfer means from it. SOLUTION: A compensation register 3 outputs compensation dark charge being dark charge that has almost the same quantity as internally generated CCD register 2 and to the positive electrode of an input side of a differential amplifier 4 in the same timing in accordance with the transfer speed of the CCD register 2. The differential amplifier 4 subtracts the compensation dark charge generated in the compensation register 3 from the signal charge supplied from the CCD register 2 and dark charge generated in the CCD register 2 and outputs it to the input terminal 5 of an external circuit 5. Because the compensation dark charge generated in the register 3 which is in almost the same quantity as the dark charge generated in the register 2 is subtracted from it in this way, nearly only the signal charge is outputted to the external circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device and a method of driving the same, and more particularly, to a solid-state imaging device capable of obtaining a high quality image by suppressing dark current, an image sensor having the same, and an image sensor having the same It relates to a driving method.

[0002]

2. Description of the Related Art An image sensor provided with a solid-state imaging device for generating signal charges according to incident light is widely used as an autofocus sensor for a camera or a linear image sensor for a scanner such as a copying machine or a facsimile.

In these sensors, in order to obtain high-quality images, it has always been required to reduce noise and improve the S / N ratio.

One of the sources of such noise is a dark current, which is based on the charge generated in the CCD register of the solid-state imaging device even when light is not irradiated, that is, the dark charge. .

The amount of charge at dark is determined by the signal accumulation time,
It is proportional to the environmental temperature of the register and the area of the interface between the impurity diffusion regions constituting the pixel.

Therefore, first, when the signal accumulation time is long, the dark charge increases. Therefore, conventionally, the generation of the dark charge was suppressed by driving the CCD register at high speed. There is a problem that the scale of the apparatus becomes large and the cost of the entire apparatus is increased.

In particular, in a multi-chip sensor in which a plurality of solid-state imaging devices having a pixel column and a CCD register are linearly arranged on a substrate, when signal charges are read out from each chip in a time series, remote from an output unit. The longer the distance, the longer the signal accumulation time of the CCD register and the greater the amount of dark charge. Conventionally, signal charges are read out in parallel by providing an output unit for each CCD register. For this reason, an A / D converter for converting a signal charge, which is an analog signal, into a digital signal must also be provided for each chip, which reduces the area efficiency and hinders an improvement in the degree of integration.

As described above, the A / D is set for each semiconductor chip.
An example of a multi-chip sensor provided with a converter is shown in the block diagram of FIG.

The multi-chip sensor 100 shown in FIG.
Each of the pixel columns 101a, 101b,... Has a photodiode array, and is arranged so as to form columns at predetermined intervals.
101c.

[0010] CCD registers 102a, 102b and 102c are provided adjacent to and in parallel with each pixel column.

Each pixel column and the CCD register adjacent thereto are respectively provided with semiconductor chips 103a, 103b, 1
03c.

The output side of each semiconductor chip is provided with A /
D converters 108a, 108b, and 108c are provided, respectively, and convert an analog signal, which is an image signal generated in each pixel and transferred by each CCD register, into a digital signal for each CCD register.

As described above, according to the prior art, A / D
Since a converter must be provided for each semiconductor chip, there is a problem that it is difficult to reduce the size, space, and cost of the sensor.

Next, even when the linear image sensor is used outdoors, dark charges are generated in accordance with the temperature characteristics of the semiconductor device having the CCD register, so that the dark voltage increases in a high-temperature environment.

Generally, a relationship of e = e ₀ × 2 ^(t−t ₀ ^{) / 8} is established between the dark voltage and the temperature of the linear image sensor.
Here, e ₀ is the dark voltage at t ₀ = 20 ° C.

FIG. 9 shows a temperature characteristic based on this relational expression for an example of a linear image sensor.

From the temperature characteristics shown in FIG. ¹ , it can be seen that the dark voltage of the linear image sensor increases by e ₀ × 2 ⁿ every time the temperature of the CCD register rises by 8 degrees.

In order to prevent an increase in dark voltage due to such a rise in temperature, conventionally, it is necessary to provide a cooling device for outdoor use in a high-temperature environment, which has caused a rise in the cost of the entire device.

In addition to the factors due to the installation environment as described above, a temperature rise due to power consumption of the solid-state imaging device is also a major factor in the increase in dark voltage.

That is, when the CCD register is driven at a high speed, the power consumption increases and a large amount of heat is generated, thereby increasing the temperature of the entire device. Particularly, in the case of an image sensor used in a copying machine or the like, since the image sensor is driven at a frequency of about 5 MHz to about 20 MHz, heat generated by using a cooling device such as an air-cooling fan is released to the outside of the device, and a pixel is formed. PN
By reducing the area of the interface of the bonding surface, e ₀ in the above relational expression was reduced.

[0021]

However, when the size of the pixel is reduced, it becomes necessary to focus the reflected light from the object to be imaged. Therefore, a highly accurate and complicated optical system such as a lens is required, and the space and cost are reduced. Not only increases, but also the S / N of the sensor is limited, and it is difficult to obtain a high quality image.

The present invention has been made in view of the above circumstances, and an object of the present invention is to reduce a dark current and obtain a high-quality image with a high S / N regardless of the driving speed and the environmental temperature. An object of the present invention is to provide a solid-state imaging device capable of performing the above, an image sensor including the same, and a driving method thereof.

[0023]

The present invention solves the above problems by the following means.

That is, according to the present invention (claim 1), a photoelectric conversion means for generating a charge according to incident light, a charge transfer means for transferring the charge generated by the photoelectric conversion means together with a dark charge, A compensating charge transfer means which is provided adjacent to and parallel to the charge transfer means, and transfers a compensating dark charge of substantially the same amount as the dark charge in synchronization with the charge transfer means; And a subtracting means for subtracting the compensation dark charge transferred by the compensation charge transfer means from the dark charge.

Further, according to the present invention (claim 2), a solid-state device having photoelectric conversion means for generating electric charges in accordance with incident light, and charge transfer means for reading out and transferring electric charges generated by the photoelectric conversion means. A plurality of semiconductor chips provided linearly on a substrate, provided with an imaging device, signal charge passing means for selectively passing signal charges supplied from the semiconductor chips, and controlling the signal charge passing means A driving method for driving the image sensor including the passage control unit, wherein the signal charge passage unit allows the signal charge to pass based on a drive signal supplied from the passage control unit. A signal of an image signal supplied from the semiconductor chip in a time equal to or less than a time obtained by dividing a signal period excluding a signal rising period by the number of the semiconductor chips. The driving method of an image sensor sequentially outputting a signal portion for sequentially sampling in between is provided.

Further, according to the present invention (claim 3), a solid-state device having photoelectric conversion means for generating signal charges according to incident light, and charge transfer means for transferring signal charges generated by the photoelectric conversion means. An image pickup device is provided, a plurality of semiconductor chips arranged linearly on a substrate, signal charge passing means for selectively passing signal charges supplied from the semiconductor chip, and control of the signal charge passing means. A pass control means; and a single output means for receiving the signal charge passing through the signal charge passing means and outputting the signal charge to an external circuit, wherein the pass control means performs a reset period and a signal rising period from one pixel readout period. A drive signal having a cycle equal to or less than a time obtained by dividing the removed signal period by the number of the semiconductor chips is supplied to the signal passing unit, and the signal passing unit receives the drive signal and receives the drive signal. Serial image sensor for each semiconductor chip at different timings within the signal period by passing the signal charges and supplying to the output means.

[0027] The image sensor may further include a color filter formed above the photoelectric conversion means and for transmitting primary color light, which is a unit for forming a color image, of the incident light.

The output means includes an analog-to-digital conversion means for converting a signal charge passed through the signal charge passing means into a digital signal, and an output means for driving the analog-digital conversion means in correspondence with the signal charge passing means. It is more preferable to include a drive control unit that supplies a drive signal to the analog-to-digital conversion unit.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Some embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same portions are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

FIG. 2 is a schematic diagram showing one embodiment of a solid-state imaging device according to the present invention.

The solid-state imaging device 10 shown in FIG. 1 has a photodiode array 1 as photoelectric conversion means for generating signal charges according to incident light, and a transfer electrode array provided in parallel adjacent to the photodiode array. 6, a CCD register 2 provided close to and parallel to the transfer electrode array 6, a CCD register 2 provided close to and parallel to the CCD register 2,
The present embodiment includes a darkness compensation register 3 characteristic of the present embodiment and a differential amplifier 4 as a subtraction unit.

The transfer electrode 6 is connected to an input terminal 36 via a wiring 26.

A transfer electrode (not shown) is provided on the upper surface of each transfer stage of the CCD register 2.
The input terminals 7 and 8 are alternately connected to each other via a terminal 28. A transfer electrode (not shown) is also provided above each transfer stage of the dark compensation register 3, and the CCD register 2
Similarly to the above, each transfer stage is alternately connected to input terminals 7 and 8 via wirings 27 and 28, respectively.
And the same drive signal is input. That is, the CCD register 2 and the darkness compensation register 3 are two-phase driving registers having the same phase for transferring electric charges based on the same driving signal.

The differential amplifier 4 has an input-side positive electrode connected to the output terminal of the compensation register 3 and a negative electrode connected to the output terminal of the CCD register 2. The output side of the differential amplifier 4 is connected to the input terminal 5 of the external circuit, and is also connected to the negative side of the input side so that the output signal is negatively fed back.

Although not shown in the figure, the upper portion of the transfer electrode 6, the CCD register 2 and the dark compensation register 3 is covered with a light-shielding film made of aluminum or the like. An opening is provided only in a region above the light receiving element 1, and light from an imaging target enters the photodiode array 1 through this opening.

The operation of the solid-state imaging device 10 is as follows.

The photodiode array 1 receiving the incident light
A signal charge corresponding to the incident light is generated. After reading out the signal charges by the transfer electrode 6, the CCD register 2 sequentially transfers the signal charges together with dark charges generated inside the CCD register 2 and outputs the signal charges to the negative electrode on the input side of the differential amplifier 4. I do.

The compensation register 3 includes a CCD generated internally.
The compensation dark charge, which is the same amount of dark charge as that of the register 2, is represented by C
It outputs to the positive electrode on the input side of the differential amplifier 4 at the same timing according to the transfer speed of the CD register 2.

The differential amplifier 4 subtracts the compensated dark charge generated inside the compensation register 3 from the signal charge supplied from the CCD register 2 and the dark charge generated inside the CCD register 2, Output to the input terminal 5 of the circuit.

As described above, the differential amplifier 4 controls the CCD
Substantially the same amount of compensated dark charge generated by the compensation register 3 is subtracted from the dark charge generated by the register 2, so that almost only signal charges are output to the external circuit. This provides a solid-state imaging device that can output a high-quality image signal with a high S / N even when the transfer speed is low and the exposure amount is low.

Next, a first embodiment of the image sensor according to the present invention will be described with reference to the drawings.

FIG. 4 is a block diagram schematically showing the image sensor 20 according to the present embodiment.

The image sensor 20 shown in the figure has solid color image pickup devices 13a, 13b, and 13c having a color filter (not shown) at the upper side and receiving incident light and generating color image signals corresponding to each color filter. Signal charge passing means 15 for selectively switching and sequentially outputting image signals supplied from the solid-state imaging device, passing control means 16 for supplying a selection signal to the signal charge passing means 15, and signal charge passing means 15. An A / D converter 18 that converts the supplied analog signal into a digital signal and a drive signal supply unit 19 that supplies a drive signal to the A / D converter 18 are provided.

The solid-state imaging devices 13a, 13b, 13c
Pixel rows 11a, 11b, and 11c, which are photoelectric conversion means composed of photodiodes, and CCD registers 12a and 12 that sequentially transfer signal charges generated in these pixel rows, respectively.
12b and 12c.

The passage control means 16 generates a selection signal having a period characteristic of the present invention, which will be described later, and supplies it to the signal charge passing means 15.

The signal charge passing means 15 is provided with a signal switching means.
_The image signal supplied from the solid-state imaging device is supplied to the A / D converter 18 by sequentially and selectively switching the signal switching means in ₃ .

FIG. 5 shows a specific example of the signal switching means. The signal switching means shown in the figure includes analog semiconductor switches 14a, 14b, 14c. One end of each switch is connected to each of the CCD registers 12a, 12b and 12c, and the other end of each switch is connected to A
/ D converter 18.

Returning to FIG. 4, the A / D converter 18 converts the sampling signal of each signal waveform supplied from the signal passing means into a digital signal based on the driving signal supplied from the driving signal supply means 19. Output to an external circuit.

The operation of the solid-state imaging device 20 will be described as an embodiment of a method for driving an image sensor according to the present invention with reference to the drawings.

First, the principle of the driving method of the image sensor according to the present embodiment will be described with reference to FIGS.

FIG. 3 is a waveform diagram showing an example of a signal waveform generated from one pixel. In the figure, the vertical axis represents the voltage E
And the horizontal axis represents time t.

The period from time t ₀ to t ₅ is one cycle of the signal C ₀ , and the CCD register 12 of the solid-state imaging device 13 reads out the signal waveform from the pixel row 11 within this time. This is referred to as a reading period T _W. Also, of the period T _W output pixel read this one stroke, is referred to from t ₀ to t ₁ and the reset period T _1, also referred to as a period T ₂ rising signal from t ₁ to t _2, further, the amplitude of the signal waveform referred to the period from t ₂ to stable until t ₃ the signal period T _3, conventionally, the signal period T ₃
In the entire period, the CCD register 12 reads out the signal charges.

The present embodiment focuses on the stability of the signal waveform in the signal period T ₃ , and the feature of this embodiment is that the signal period T ₃ is defined by a semiconductor chip array on which a solid-state image pickup device of an image sensor is formed. The point is that each signal charge is sampled by a control signal having a period of time divided by the number of chips.

FIG. 1 is a timing chart showing an outline of such sampling of signal charges.

The three signals C ₁ , C ₂ and C ₃ shown in FIG.
In each case, the solid-state imaging devices 13a, 13b, 1 shown in FIG.
The signals are photoelectrically converted by the pixel columns 11a, 11b, and 11c of 3c. Further, these signals C ₁ , C ₂ , C ₃
The pulse signal S _{A / D} shown below corresponds to the A / D shown in FIG.
It is a drive signal supplied to the converter 18 and its pulse period T _{A / D} is a value obtained by dividing the signal period T ₃ into three.

Since the incident light is simultaneously incident on the pixel rows 11a, 11b and 11c, the waveforms of the signals C ₁ , C ₂ and C ₃ are as follows.
All are in phase.

Therefore, first, the signal C in the time period from t _{2 to} t ₃ is obtained.
The S ₁ part of ₁ reads and supplies to the A / D converter 18, and drives the A / D converter 18 by the driving pulse P _1, and outputs a digital signal of the signal C _1.

Next, during the time period from t _{3 to} t ₄ , the S ₂ portion of the signal C ₂ is read out, supplied to the A / D converter 18, and the A / D converter 18 is driven by the driving pulse P _2. Te, and outputs a digital signal of the signal C _2.

Further, S ₃ of the signal C _{3 in} the time period from t _{4 to} t ₅
Partial reads and supplies to the A / D converter 18, and drives the A / D converter 18 by the driving pulse P _3, and outputs a digital signal of the signal C _3.

The A / D converter 1 selectively switches each signal.
The means for reading out to 8 uses a switching element such as an analog semiconductor switch shown in FIG. 5 and supplies a pulse signal having the same cycle as the drive pulse to the switching element as a selection drive signal in accordance with the drive pulse. Good.

As described above, photoelectric conversion is performed on each pixel column, and C
For the signal supplied to the CD register, the signal period T ₃
Is sampled at a cycle divided by the number of chips, so that signals from all chips can be supplied to a single A / D converter within one pixel readout period. This makes it possible to reduce the size of the entire device, and also for an image sensor equipped with a low-speed driving solid-state imaging device.
Since the accumulation time can be shortened and the generation of dark charge can be suppressed, a high-quality image signal with a high S / N can be provided.

Since the image sensor 20 shown in FIG. 4 is driven by the above method, it operates as follows.

First, each of the pixel columns 11a, 11b, and 11c has a signal charge C ₁ ′, C ₂ ′, C of a color image corresponding to incident light.
₃ ′, and the signal charges C ₁ ′, C ₂ ′, C ₃ ′
The data is read out to each of the CCD registers 12a, 12b, 12c.

Each CCD register 12a, 12b, 12c
Supplies these image signals C ₁ ′, C ₂ ′, C ₃ ′ to the signal passing means 15.

The signal passing means 15 receives each image signal C ₁ ′, based on the selection signal supplied from the passage control means 16.
C ₂ ′ and C ₃ ′ are selectively switched sequentially and passed.

That is, as shown in FIG.
In the time period from ₂ to t _3, the analog switch 12a on, the analog switch 12b, and clear the 12c (see FIG. 5), CCD register 12a and the A / D converter 1
8 is short-circuited, and the connection between the CCD registers 12b and 12c and the A / D converter 18 is opened, so that the S ₁ ′ portion of the image signal C ₁ ′ is read out and sent to the A / D converter 18. Supply.

Next, in the time period from time t ₃ to time t ₄ ,
Turn on the analog switch 12b,
a, 12c are turned off (see FIG. 5), the connection between the CCD register 12b and the A / D converter 18 is short-circuited, and the connection between the CCD registers 12a, 12c and the A / D converter 18 is opened. , The S ₂ ′ portion of the image signal C ₂ ′ is read and supplied to the A / D converter 18.

Further, in the time period from the time t ₄ to the time t ₅ , the analog switch 12c is turned on, and the analog switches 12a and 12b are turned off (see FIG. 5), so that the connection between the CCD register 12c and the A / D converter 18 is made. Short the connection and CC
D register 12a, by opening the connection between 12b and A / D converter 18, a portion 'S _3' of the image signal C ₃ is read, supplied to the A / D converter 18.

The drive signal supply means 19 supplies a drive signal corresponding to the selection signal to the A / D converter 18, and the A / D converter
The converter 18 performs signal passing means 1 based on the drive signal.
The analog signals of the signal portions S ₁ ′, S ₂ ′, S ₃ ′ sequentially supplied from 5 are sequentially converted into digital signals and output to an external circuit (not shown).

As described above, according to the image sensor according to the present embodiment, the signal period within one pixel readout period is sampled at a period divided by the number of solid-state imaging devices.
The accumulation time can be shortened, and generation of dark charge can be suppressed. This makes it possible to increase the size of each pixel that constitutes the photoelectric conversion unit, so that a high-quality image can be output. Also, since signal charges are read from all solid-state imaging devices within one pixel readout period, A / D conversion can be performed by a single A / D converter. Thus, the size and cost of the solid-state imaging device can be further reduced.

Next, a second embodiment of the image sensor according to the present invention will be described with reference to the drawings.

FIG. 6 is a schematic perspective view showing the linear image sensor 30 of the present embodiment.

This linear image sensor 30 is a more specific version of the image sensor shown in FIG. 4, and is driven based on the above-described driving method as an embodiment of the image sensor according to the present invention.

As shown in FIG. 6, a linear image sensor 30 includes a substrate 35, and six semiconductor chips 31 arranged in a row on the upper surface of the substrate 35 and slightly behind the substrate 35 at a small interval. A semiconductor chip 38 is provided on the front side of the upper surface of the substrate 35. In the semiconductor chip 31,
Solid-state imaging devices have been formed that have CCD registers and larger pixels than those incorporated in the prior art. In the semiconductor chip 38, a signal passing circuit and a single A / D conversion circuit are formed and connected to each other. The signal passage circuit has the same number of analog semiconductor switches as the semiconductor chip 31. The semiconductor chip 38 also generates a selection signal for controlling on / off of the analog semiconductor switch and supplies the selection signal to a signal passing circuit, and generates a drive signal corresponding to the selection signal to generate the A / A signal. And a drive signal generation circuit that supplies the D conversion circuit and drives the D conversion circuit. The CCD register in the semiconductor chip 31 and the signal passing circuit in the semiconductor chip 38 are mutually connected by a wiring layer formed on the surface of and inside the substrate 35. Although not shown in the figure, a color filter is provided above the semiconductor chip 31 so that signal charges corresponding to a color image can be obtained.

Since this linear image sensor 30 is driven by the above-described embodiment of the driving method according to the present invention, the A / D conversion of the image signal generated in all the pixels is performed by a single A / D conversion circuit. The conversion can be processed. As a result, a sufficient space can be provided, and the interval between the semiconductor chips can be reduced.
A larger number of semiconductor chips can be mounted thereon than before.

Further, since signal charges are read out from all chips and A / D converted during one pixel readout period, an image signal can be taken out before a large amount of dark charge is generated. Thereby, an image having a high S / N can be provided. Further, since there is no fear that a large amount of dark charge is generated, a larger pixel can be mounted on the semiconductor chip than before. Thereby, a high quality color image can be provided.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and can be variously modified and implemented without departing from the gist thereof.
In the above-described embodiment, an image sensor including three or six solid-state imaging devices has been described. However, the number of solid-state imaging devices is not limited to these, and can be increased or decreased according to specifications.

[0078]

As described above in detail, the present invention has the following effects.

That is, according to the solid-state imaging device of the present invention, the solid-state imaging device includes the compensation charge transfer means and the subtraction means, and subtracts the same amount of the compensation dark charge from the dark charge transferred by the charge transfer means. Therefore, irrespective of low-speed driving and high environmental temperature, the dark current is erased and a high-quality image with high S / N can be taken out.

Further, according to the driving method of the linear image sensor according to the present invention, since the image signal transferred from each pixel is sampled by dividing the signal period by the number of semiconductor chips, a large amount of dark charge is generated. Before it happens
Image signals can be extracted and output from all semiconductor chips within one pixel readout period.

According to the linear image sensor of the present invention, since the signal period is divided by the number of semiconductor chips, the signal passing means for sequentially passing the image signal transferred from each pixel is provided. Before a large amount of dark charge is generated, image signals can be taken out and output from all semiconductor chips within one pixel readout period.

Further, according to the image sensor of the present invention, a small-sized image sensor capable of taking out a high-quality image with a high S / N and performing A / D conversion processing with a single A / D converter. Is provided. Further, since the image signal generated and transferred in each semiconductor chip is extracted before a large amount of dark charge is generated, the size of the pixel can be increased, so that a higher quality image signal can be extracted. A possible image sensor is provided.

[Brief description of the drawings]

FIG. 1 is a timing chart showing an outline of signal charge sampling in a method for driving an image sensor according to the present invention.

FIG. 2 is a schematic diagram illustrating an outline of an embodiment of a solid-state imaging device according to the present invention.

FIG. 3 is a waveform diagram showing an example of a signal waveform generated from one pixel and read out to a CCD register.

FIG. 4 is a block diagram schematically illustrating a first embodiment of an image sensor according to the present invention.

5 is a circuit diagram showing a specific example of a signal switching unit provided in a signal charge passing unit of the image sensor shown in FIG.

FIG. 6 is a schematic perspective view showing a second embodiment of the image sensor according to the present invention.

FIG. 7 is a block diagram schematically illustrating an example of a conventional multi-chip sensor.

FIG. 8 is a temperature characteristic diagram showing a relationship between a dark voltage and a temperature of the solid-state imaging device.

[Explanation of symbols]

1, 11a, 11b, 11c pixel column 2,12a, 12b, 12c CCD register 3 dark compensation register 4 differential amplifier 6,7,8 input terminals _{C 1, C 2, C 3} , C 1 ', C 2' , C ₃ ′ image signal signal portion S _{A / D} A / D converter drive signal 10, 13a, 13b, 13c solid-state imaging device 31 semiconductor chip 15 signal charge passing means 16 passage control means 18, 38 A / D converter 19 drive control means 14a, 14b, 14c analog semiconductor switches 20,30,100 image sensor 26, 27, 28 wiring T _W 1 pixel readout period T ₁ the reset period T ₂ signal rising period T ₃ signal period

 ──────────────────────────────────────────────────続 き Continued on front page F term (reference) 4M118 AA05 AB01 BA04 BA10 CA02 DB01 DB06 DD09 DD10 FA03 FA08 GB11 GC08 5C024 AA01 CA10 EA08 FA01 FA02 GA01 GA11 GA52 HA06 HA14 HA18 JA21 5C072 AA01 BA11 EA05 FB08 FB16 QA05 UA06 UA06

Claims (4)

[Claims] 1. A photoelectric conversion means for generating a charge according to incident light, a charge transfer means for transferring the charge generated by the photoelectric conversion means together with a dark charge, and a charge transfer means provided adjacent to and parallel to the charge transfer means. A compensation charge transfer means for transferring substantially the same amount of compensation dark charge as that of the dark charge in synchronization with the charge transfer means; and the compensation charge transfer means from the dark charge transferred by the charge transfer means. And a subtracting means for subtracting the compensated dark-time charge transferred by the method. 2. A solid-state imaging device comprising: a photoelectric conversion means for generating electric charges according to incident light; and a charge transfer means for reading and transferring electric charges generated by the photoelectric conversion means. Driving of an image sensor, comprising: a plurality of semiconductor chips arranged; signal charge passing means for selectively passing signal charges supplied from the semiconductor chip; and passage control means for controlling the signal charge passing means. In the method, the signal charge passing means passes the signal charge based on a drive signal supplied from the passage control means, so that a signal period obtained by excluding a reset period and a signal rising period from one pixel readout period is set in the semiconductor device. The signal portion within the signal period of the image signal supplied from the semiconductor chip is sequentially sampled in a time equal to or less than the time divided by the number of chips. A method of driving an image sensor that outputs data sequentially. 3. A solid-state imaging device comprising: photoelectric conversion means for generating signal charges according to incident light; and charge transfer means for transferring signal charges generated by the photoelectric conversion means. A plurality of semiconductor chips disposed, signal charge passing means for selectively passing signal charges supplied from the semiconductor chip, passage control means for controlling the signal charge passing means, and signal charge passing means A single output means for receiving the passed signal charge and outputting the signal charge to an external circuit, wherein the passage control means calculates a signal period obtained by excluding a reset period and a signal rising period from one pixel readout period by the number of the semiconductor chips. A drive signal having a cycle equal to or less than the divided time is supplied to the signal charge passing unit, and the signal charge passing unit receives the drive signal and performs a preceding operation for each of the semiconductor chips. The image sensor supplies to the output unit at different timings within the signal period by passing the signal charges. 4. An analog-to-digital converter for converting a signal charge passed through the signal charge passing means into a digital signal, the output means being driven in accordance with the signal charge passing means. 4. The image sensor according to claim 3, further comprising a drive control unit for supplying a drive signal to the analog-to-digital conversion unit.