JP2000114319A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JP2000114319A JP2000114319A JP10276342A JP27634298A JP2000114319A JP 2000114319 A JP2000114319 A JP 2000114319A JP 10276342 A JP10276342 A JP 10276342A JP 27634298 A JP27634298 A JP 27634298A JP 2000114319 A JP2000114319 A JP 2000114319A
- Authority
- JP
- Japan
- Prior art keywords
- film
- connection member
- external connection
- adhesive
- adhesive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75314—Auxiliary members on the pressing surface
- H01L2224/75315—Elastomer inlay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、接着材フィルムにより
半導体チップがその支持部材に固定された方式の半導体
パッケージの製造法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor package in which a semiconductor chip is fixed to a supporting member by an adhesive film.
【０００２】[0002]
【従来の技術】近年、半導体パッケージは実装の高密度
化に伴い、小型、軽量化が要求され、パッケージを半導
体チップとほぼ同じ大きさまで小型化したものまで開発
されている。これら半導体パッケージ、いわゆるチップ
サイズパッケージの一般的な構造は、半導体チップを接
着材により配線層を有する外部接続部材に接着保持さ
せ、チップと外部接続端子をワイヤーボンディングやＴ
ＡＢ（Tape Automated Bonding）のインナーリードボン
ディング等各種方法により電気的に接続し、さらに必要
に応じてパッケージを一部又は全体を樹脂封止してい
る。これら半導体パッケージにおいて、ポリイミド等の
フィルム基板からなる外部接続部材の配線層が接着材と
接する側に配置している方式は、サーキットイン方式と
呼ばれている。図１に配線付外部接続部材の断面構造を
示した。このサーキットイン方式では、接着材フィルム
と接着する側の外部接続部材表面に、厚み〜２０μｍ程
度の配線２や、はんだボールを搭載のするためのランド
３と呼ばれるパターンによる凹凸が存在する。2. Description of the Related Art In recent years, with the increase in mounting density, semiconductor packages have been required to be smaller and lighter, and packages having been downsized to substantially the same size as semiconductor chips have been developed. The general structure of these semiconductor packages, so-called chip size packages, is to bond and hold a semiconductor chip to an external connection member having a wiring layer with an adhesive, and connect the chip and the external connection terminal by wire bonding or T-bonding.
Electrical connection is made by various methods such as inner lead bonding of AB (Tape Automated Bonding), and a part or the whole of the package is resin-sealed as required. In these semiconductor packages, a method in which a wiring layer of an external connection member made of a film substrate of polyimide or the like is arranged on a side in contact with an adhesive is called a circuit-in method. FIG. 1 shows a cross-sectional structure of the external connection member with wiring. In the circuit-in method, the surface of the external connection member on the side to be bonded to the adhesive film has unevenness due to a pattern called a land 2 for mounting a wiring 2 or a solder ball having a thickness of about 20 μm.
【０００３】このため、外部接続部材と接着材を単にス
テンレス等の金属製のコレットを用いて加熱圧着する従
来の方法では、配線のある凸部では加圧される凹部では
充分に加圧されず、凹部で未接着による剥離やボイド等
の欠陥が発生し易い。特に、配線間や外部接続端子のた
めのランド部周辺では、接着材樹脂の埋め込み不足が生
じ易い。図２に埋め込みが不十分で生じた、外部接続部
材付近に発生したボイド４の断面形状図を示す。このよ
うな剥離やボイドが初期から半導体パッケージ内に存在
すると、パッケージを実装基板にリフロー工程で実装す
る際や、基板実装後の温度サイクル試験において、前記
欠陥が起点となり外部接続部材と接着材間で大きな剥離
が発生し、パッケージの信頼性が劣る問題がある。For this reason, in the conventional method in which the external connection member and the adhesive are heated and pressed by simply using a metal collet made of stainless steel or the like, a convex portion having wiring is not sufficiently pressed in a concave portion which is pressed. In addition, defects such as peeling and voids due to non-adhesion easily occur in the concave portions. In particular, insufficient embedding of the adhesive resin is likely to occur between wirings and around the lands for external connection terminals. FIG. 2 shows a cross-sectional view of the void 4 generated near the external connection member due to insufficient embedding. If such peeling or voids are present in the semiconductor package from the beginning, the defect becomes a starting point when the package is mounted on the mounting board in a reflow process or in a temperature cycle test after the mounting of the board, and the gap between the external connection member and the adhesive material. In this case, there is a problem that large peeling occurs and the reliability of the package is deteriorated.
【０００４】[0004]
【発明が解決しようとする課題】本発明は外部接続部材
と接着材フィルムをボイドや剥離等の欠陥をなく接着す
るための圧着を用いた半導体装置の製造法に関する。The present invention relates to a method of manufacturing a semiconductor device using pressure bonding for bonding an external connection member and an adhesive film without defects such as voids and peeling.
【０００５】[0005]
【課題を解決するための手段】前記課題を解決するた
め、本発明者らは配線付外部接続部材に接着材フィルム
を貼り付ける際、接着材全面に均一に荷重をかけ熱圧着
することにより、従来の製造方法に比べ接続部材と接着
材フィルム界面のボイドや剥離等の欠陥が少なく、信頼
性に優れる半導体装置の製造方法およびその製造設備を
提供できることを見いだした。具体的には、接着フィル
ムを熱圧着する際に、接着材フィルム側の加圧治具（コ
レット）クッション材とその外側に接着材離型用フィル
ムを取り付ける、またはコレットと接着材の間に挿入
し、外部接続部材と加熱圧着する。クッション材および
離型用フィルムは生産性の点から、接着材フィルムごと
に挿入するよりコレットに装着した方が好ましい。この
方法により厚み〜２０μｍ程度の接続部材配線層の凹、
凸部を均一に加圧でき、接続部材の配線部間に接着材樹
脂が充分に埋め込まれ、ボイドや剥離等の欠陥なく接着
ができる。Means for Solving the Problems In order to solve the above-mentioned problems, the present inventors apply a uniform load to the entire surface of the adhesive when applying the adhesive film to the external connection member with wiring, and perform thermocompression bonding. The present inventors have found that there can be provided a method of manufacturing a semiconductor device which has less defects such as voids and peeling at the interface between the connection member and the adhesive film than the conventional manufacturing method and has excellent reliability, and a manufacturing facility thereof. Specifically, when thermocompression bonding the adhesive film, attach a pressure jig (collet) cushion material on the adhesive film side and attach an adhesive release film to the outside, or insert between the collet and the adhesive. Then, it is heat-pressed with the external connection member. From the viewpoint of productivity, the cushion material and the release film are preferably mounted on a collet rather than being inserted for each adhesive film. According to this method, the concave portion of the connecting member wiring layer having a thickness of about 20 μm is formed.
The convex portions can be uniformly pressed, the adhesive resin is sufficiently embedded between the wiring portions of the connection member, and bonding can be performed without defects such as voids and peeling.
【０００６】次に、クッション材および離型用フィルム
の詳細について説明する。クッション材は耐熱性に優れ
る四フッ化エチレン樹脂多孔質シートやアラミド多孔質
シート等が望ましく、これらの厚み５０μｍ程度のシー
トを重ねてクッション材料とする。シリコンゴムやシリ
コンフォーム、合成ゴム等のシートでもある程度のクッ
ション効果があったが、多孔質材と比べ細部の凹凸にま
で均一に加圧することができなかった。離型用フィルム
としては、接着材フィルムと接着が弱いものが好まし
く、四フッ化エチレン樹脂の薄いシートが望ましい。そ
の厚さはコレットとの間に挿入するクッション材のクッ
ション効果を阻害しないためにも、１００μｍ以下が望
ましい。Next, details of the cushion material and the release film will be described. The cushion material is desirably a porous sheet of tetrafluoroethylene resin or an aramid porous sheet having excellent heat resistance, and these sheets having a thickness of about 50 μm are laminated to form a cushion material. Sheets made of silicone rubber, silicone foam, synthetic rubber, etc., also had a certain cushioning effect, but could not evenly press even irregularities in detail compared to porous materials. As the release film, a film having low adhesion to the adhesive film is preferable, and a thin sheet of ethylene tetrafluoride resin is preferable. The thickness is desirably 100 μm or less so as not to hinder the cushioning effect of the cushion material inserted between the collet and the collet.
【０００７】外部接続部材への接着材フィルムの具体的
な圧着方法は、図３に示すように、まず接着材フィルム
を所定の寸法に切断する。切断方法は、所定の寸法に切
断されればいずれの方法でも構わないが、作業性を考え
打ち抜き金型を用いて打ち抜くことが望ましい。次に、
接着材フィルムを外部接続部材への仮圧着する。仮圧着
は打ち抜き方式の場合には、予め金型と外部接続部材と
の位置合わせを行い、打ち抜きパンチで所定の形状に打
ち抜き剪断した後、打ち抜いたフィルムをそのまま下降
させ、その下の外部接続部材へ押し付けて挟み込むこと
により、接続部材の所定の位置に仮圧着できる。一方切
断方式の場合は、切断した接着材フィルムを一度ステー
ジ上で位置合わせを行い、仮圧着コレットで吸着し外部
接続部材の所定位置へ仮圧着する。仮圧着では、接着材
が外部接続部材の所定位置に仮固定されれば良いので、
圧着条件は限定されないが、接着材フィルムのタック性
により、金型部やコレットに接着するのを防ぐために、
外部接続部材に接する面のみを加熱し、金型部又は仮圧
着コレットは加熱せず、打ち抜き金型周辺には冷却機構
がある方が好ましい。本圧着では、コレットに本請求項
記載のクッション材および離型フィルムを装着又はコレ
ットと接着材の間に挿入し加熱圧着する。図４に圧着治
具周辺の断面形状を示す。クッション材および離型フィ
ルムの交換は、その効果が減少するまで連続して用いる
ことができる。[0007] As a specific method of pressing the adhesive film to the external connection member, as shown in FIG. 3, first, the adhesive film is cut into a predetermined size. The cutting method may be any method as long as it is cut to a predetermined size. However, it is preferable to perform punching using a punching die in consideration of workability. next,
Temporarily press-bond the adhesive film to the external connection member. In the case of the pre-press bonding, in the case of the punching method, the die and the external connection member are aligned in advance, punched and sheared into a predetermined shape by a punch, and the punched film is lowered as it is, and the external connection member thereunder is lowered. By pressing the connection member against the connection member, the connection member can be temporarily crimped to a predetermined position. On the other hand, in the case of the cutting method, the cut adhesive film is once positioned on the stage, adsorbed by a temporary pressure collet, and temporarily pressed to a predetermined position of the external connection member. In the temporary crimping, since the adhesive only needs to be temporarily fixed to a predetermined position of the external connection member,
The crimping conditions are not limited, but due to the tackiness of the adhesive film, to prevent adhesion to the mold and collet,
It is preferable to heat only the surface in contact with the external connection member, not to heat the mold portion or the pre-pressed collet, and to provide a cooling mechanism around the punching die. In the final compression bonding, the cushion material and the release film according to the present invention are attached to the collet, or inserted between the collet and the adhesive, followed by thermal compression. FIG. 4 shows a cross-sectional shape around the crimping jig. The replacement of the cushioning material and the release film can be used continuously until the effect is reduced.
【０００８】本圧着の条件は、接着材が外部接続部材に
ボイドや剥離等の欠陥がなく接着できれば特に限定され
ないが、温度は外部接続部材の耐熱性の点から６０〜２
５０℃、特に８０〜２００℃が好ましい。圧着圧力は５
〜２０ｋｇｆ／ｃｍ2 が好ましい。これより圧着圧力が
低いと接着材が外部接続部材の配線間への埋め込み性が
悪くボイドが生じ易く、これより圧着圧力が高いと接着
材のはみ出しフィルム寸法精度が劣化する。接着材のは
み出しが一定量以上大きくなると、半導体チップパッド
部や外部接続部材のＴＡＢのインナーリードボンディン
グ部領域にかかり、ボンディングが不可能となる問題が
あり好ましくない。圧着時間は生産性を考え０．５〜１
０秒が好ましい。圧着時の加熱は外部接続部材側からの
み加熱し、コレット側は加熱せず、接着材フィルムとコ
レットとの不必要な接着を防ぐことが好ましい。[0008] The condition of the final pressure bonding is not particularly limited as long as the adhesive can be bonded to the external connection member without defects such as voids and peeling, but the temperature is 60 to 2 in view of the heat resistance of the external connection member.
50 ° C, particularly preferably 80 to 200 ° C. Crimp pressure is 5
-20 kgf / cm 2 is preferred. If the pressure is lower than this, the adhesive is less likely to be embedded in the external connection member between the wirings, and voids are likely to be generated. If the pressure is higher than this, the dimensional accuracy of the extruded film of the adhesive deteriorates. If the protrusion of the adhesive becomes larger than a predetermined amount, the protrusion is applied to the semiconductor chip pad portion or the inner lead bonding portion region of the TAB of the external connection member, and there is a problem that bonding becomes impossible, which is not preferable. Crimping time is 0.5-1 considering productivity.
0 seconds is preferred. It is preferable that the heating at the time of pressure bonding be performed only from the side of the external connection member and not the side of the collet, thereby preventing unnecessary adhesion between the adhesive film and the collet.
【０００９】外部接続部材としては、ポリイミドやエポ
キシ樹脂等のフィルム基板が一般的である。接着材フィ
ルムが接着される裏面に、外部接続用端子がエリアアレ
イ状に形成されている。半導体チップ側端子と外部接続
部材側端子の接続は、金ワイヤボンディングでもＴＡＢ
のインナーリードボンディング方式でもよい。As an external connection member, a film substrate of polyimide, epoxy resin or the like is generally used. External connection terminals are formed in an area array on the back surface to which the adhesive film is adhered. Connection between semiconductor chip side terminal and external connection member side terminal is TAB even with gold wire bonding
Inner lead bonding method.
【００１０】接着材フィルムは、熱可塑性でも熱硬化性
でも構わない。熱硬化性接着材の例としては、エポキシ
樹脂およびその硬化剤、エポキシ樹脂と相溶性がある高
分子樹脂、エポキシ基含有アクリル系共重合体ならびに
硬化促進剤等からなる半硬化状態の熱硬化系接着材があ
る。また熱可塑系接着材の例としては、ポリイミド、ポ
リアミドイミド、ポリエーテルアミドイミド等がある。
接着材フィルムは、接着材樹脂単層でも、コア材として
耐熱性熱可塑フィルムの両側に接着材樹脂を積層した３
層構造でもよい。搬送等の作業性の点からは、ある程度
の堅さを有する３層構造フィルムが好ましい。コア材の
厚みは、２５μｍ程度で両面の接着材層の厚みは同じで
も異なっていてもよいが、外部接続部材にある配線層へ
の接着材の埋め込み性を確保するためにも、外部接続部
材側の接着材厚みを半導体チップ側接着材より厚くする
ことが好ましい。[0010] The adhesive film may be thermoplastic or thermosetting. Examples of the thermosetting adhesive include a semi-cured thermosetting system comprising an epoxy resin and a curing agent thereof, a polymer resin compatible with the epoxy resin, an epoxy group-containing acrylic copolymer, and a curing accelerator. There is adhesive. Examples of the thermoplastic adhesive include polyimide, polyamide imide, and polyether amide imide.
The adhesive film may be a single layer of the adhesive resin or a core material in which the adhesive resin is laminated on both sides of the heat-resistant thermoplastic film.
It may have a layered structure. From the viewpoint of workability such as conveyance, a three-layer structure film having a certain degree of hardness is preferable. The thickness of the core material is about 25 μm, and the thicknesses of the adhesive layers on both sides may be the same or different. However, in order to ensure the embedding property of the adhesive into the wiring layer in the external connection member, the external connection member is required. It is preferable that the thickness of the adhesive on the side is larger than the thickness of the adhesive on the semiconductor chip side.
【００１１】[0011]
【実施例】実施例１ エポキシ樹脂およびその硬化剤、エポキシ樹脂と相溶性
がある高分子量樹脂、エポキシ基含有アクリル系共重合
体ならびに硬化剤促進剤等からなる半硬化状態からなる
接着材が２５μｍ厚のユーピレックスコア材両面に７５
および５０μｍ塗工された３層構造の接着材フィルムを
作製した。この接着材フィルムを配線付外部接続部材と
して、ポリイミド系フィルムからなるＴＡＢテープに熱
圧着を行った。配線層の配線幅は３０μｍ、最狭の配線
間隔は４０μｍで配線層厚みは２０μｍのＴＡＢテープ
を用いた。圧着の際にコレットにクッション材として、
住友電気工業株式会社製の四フッ化エチレン樹脂多孔質
（ポアフロンＷＰ−１００−１００）を４枚積層したも
のを装着し、さらにその外側にフィルムの離型用フィル
ムとして、ニチアス株式会社製の厚み５０μｍの四フッ
化エチレン樹脂シートを装着し、接着材フィルムを加圧
した。圧着条件は、外部接続部材が接するステージ温度
が１２０℃、圧力を１２ｋｇｆ／ｃｍ2 、時間は５秒と
した。圧着後、ＴＡＢフィルム側のボイド等を観察し
た。その結果を表１に示した。EXAMPLE 1 An adhesive in a semi-cured state consisting of an epoxy resin and its curing agent, a high molecular weight resin compatible with the epoxy resin, an epoxy group-containing acrylic copolymer, a curing agent accelerator and the like was 25 μm. 75 on both sides of thick Iupirex core material
Then, an adhesive film having a three-layer structure coated with 50 μm was prepared. This adhesive film was used as an external connection member with wiring and thermocompression bonded to a TAB tape made of a polyimide film. The wiring width of the wiring layer was 30 μm, the narrowest wiring interval was 40 μm, and the thickness of the wiring layer was 20 μm using a TAB tape. As a cushion material for the collet when crimping,
A laminate of four layers of porous tetrafluoroethylene resin (Poreflon WP-100-100) manufactured by Sumitomo Electric Industries, Ltd. is attached, and a film of Nichias Co., Ltd. is further provided on the outside thereof as a film release film. A 50 μm tetrafluoroethylene resin sheet was attached, and the adhesive film was pressed. The crimping conditions were as follows: the stage temperature at which the external connection member was in contact was 120 ° C., the pressure was 12 kgf / cm 2 , and the time was 5 seconds. After pressing, voids on the TAB film side were observed. The results are shown in Table 1.
【００１２】比較例１ 実施例１の離型用フィルムの厚みを１００μｍに変更し
た他は、実施例１の接着材、外部接続部材を用い、同様
の条件で熱圧着を行った。圧着後、ＴＡＢフィルム側の
ボイド等を観察した。その結果を表１に示した。Comparative Example 1 Thermocompression bonding was performed under the same conditions using the adhesive and the external connection member of Example 1 except that the thickness of the release film of Example 1 was changed to 100 μm. After pressing, voids on the TAB film side were observed. The results are shown in Table 1.
【００１３】比較例２ 実施例１の離型用フィルムの厚みを１００μｍに変更し
た他は、実施例１の接着材、外部接続部材を用い、同様
の条件で熱圧着を行った。圧着後、ＴＡＢフィルム側の
ボイド等を観察した。その結果を表１に示した。Comparative Example 2 A thermocompression bonding was carried out under the same conditions using the adhesive and the external connection member of Example 1 except that the thickness of the release film of Example 1 was changed to 100 μm. After pressing, voids on the TAB film side were observed. The results are shown in Table 1.
【００１４】比較例３ 実施例１のクッション材をシリコンゴム変更した他は、
実施例１の接着材、外部接続部材を用い、同様の条件で
熱圧着を行った。圧着後、ＴＡＢフィルム側のボイド等
を観察した。その結果を表１に示した。Comparative Example 3 The cushioning material of Example 1 was changed except that silicone rubber was used.
Using the adhesive and the external connection member of Example 1, thermocompression bonding was performed under the same conditions. After pressing, voids on the TAB film side were observed. The results are shown in Table 1.
【００１５】比較例４ 実施例１の離型用フィルムおよびクッション材を用い
ず、実施例１の接着材、外部接続部材を用い、同様の条
件で熱圧着を行った。圧着後、ＴＡＢフィルム側のボイ
ド等を観察した。その結果を表１に示した。COMPARATIVE EXAMPLE 4 Thermocompression bonding was performed under the same conditions using the adhesive and the external connection member of Example 1 without using the release film and the cushioning material of Example 1. After pressing, voids on the TAB film side were observed. The results are shown in Table 1.
【００１６】[0016]
【表１】 ┘[Table 1] ┘
【００１７】[0017]
【発明の効果】本発明の方法で接着材フィルムを配線付
外部接続部材へ貼り付けることにより、外部接続部材と
接着材フィルム界面に空隙（ボイド）や剥離等の欠陥を
低減し、従来の製造方法に比べて信頼性に優れる半導体
装置の製造法を提供することができる。According to the present invention, by bonding the adhesive film to the external connection member with wiring by the method of the present invention, defects such as voids and peeling at the interface between the external connection member and the adhesive film can be reduced, and the conventional manufacturing method can be realized. A method for manufacturing a semiconductor device which is more reliable than the method can be provided.
【図１】本発明の接着材フィルムを適応する配線付外部
接続部材の断面図。FIG. 1 is a cross-sectional view of an external connection member with wiring to which an adhesive film of the present invention is applied.
【図２】外部接続部材へ従来方法により接着材フィルム
を接着した場合の断面図。FIG. 2 is a cross-sectional view when an adhesive film is bonded to an external connection member by a conventional method.
【図３】本発明による接着材フィルムの外部接続部材へ
の接着フロー図。FIG. 3 is a flow chart of bonding an adhesive film to an external connection member according to the present invention.
【図４】本発明の圧着コレット周辺の斜視図。FIG. 4 is a perspective view around a crimping collet of the present invention.
１ フィルム基板 ２ 配線層の配線 ３ 配線層のランド ４ 配線付外部接続部材付近に発生したボイド ５ 接着材フィルム ６ コレット ７ クッション材 ８ 離型フィルム ９ 配線付外部接続部材 １０ 加熱部 DESCRIPTION OF SYMBOLS 1 Film board 2 Wiring of wiring layer 3 Land of wiring layer 4 Void generated near external connection member with wiring 5 Adhesive film 6 Collet 7 Cushion material 8 Release film 9 External connection member with wiring 10 Heating part
フロントページの続き (72)発明者 安田 雅昭 茨城県つくば市和台48 日立化成工業株式 会社筑波開発研究所内 (72)発明者 畠山 恵一 茨城県つくば市和台48 日立化成工業株式 会社筑波開発研究所内 (72)発明者 原 央子 茨城県つくば市和台48 日立化成工業株式 会社筑波開発研究所内 Ｆターム(参考） 4J004 AA10 AA11 AA13 AA17 AB05 BA02 CC02 DA02 DB02 EA05 EA07 FA05 FA08 4M105 AA03 CC11 DD22 EE16 EE19 5F047 AA17 BA33 BB03 FA46 FA52Continued on the front page (72) Inventor Masaaki Yasuda 48 Wadai, Tsukuba, Ibaraki Pref.Hitachi Chemical Industry Co., Ltd.Tsukuba R & D Co., Ltd. (72) Inventor Hiroko Hara 48 Wadai, Tsukuba, Ibaraki Prefecture F-term in Tsukuba Development Laboratory, Hitachi Chemical Co., Ltd. BA33 BB03 FA46 FA52
Claims (4)
の配線層面へ、一定の大きさに切断したフィルム状接着
材を加圧治具（コレット）を用い、熱圧着する際に、コ
レットにクッション材とその外側に接着材離型用フィル
ムを取り付ける、またはコレットと接着材の間に挿入
し、外部接続部材側を加熱することを特徴とする半導体
装置の製造法。When a thermosetting adhesive is applied to a wiring layer surface of an external connection member with a wiring made of a film substrate by using a pressing jig (collet), a film-shaped adhesive cut into a predetermined size is cushioned to the collet. A method of manufacturing a semiconductor device, comprising attaching an adhesive release film to a material and the outside thereof, or inserting the film between a collet and an adhesive, and heating the external connection member side.
ンシート、クッション材が多孔質材料からなる半導体装
置の製造法。2. A method for manufacturing a semiconductor device according to claim 1, wherein the release film according to claim 1 is a Teflon sheet and the cushion material is a porous material.
００μｍ以下のテフロンシート、クッション材が多孔質
ＰＴＦＥからなる半導体装置の製造法。3. The release film according to claim 1, wherein the release film has a thickness of 1.
A method for manufacturing a semiconductor device in which a Teflon sheet having a thickness of not more than 00 μm and a cushion material are made of porous PTFE.
００μｍ以下のテフロンシート、クッション材が多孔質
ＰＴＦＥ、接着材フィルムがエポキシ樹脂およびその硬
化剤、エポキシ樹脂と相溶性がある高分子量樹脂、エポ
キシ基含有アクリル系共重合体ならびに硬化促進剤等か
らなる半硬化状態の熱硬化系樹脂からなる半導体装置の
製造法。4. The release film according to claim 1 having a thickness of 1
Teflon sheet of 00 μm or less, cushion material made of porous PTFE, adhesive film made of epoxy resin and its hardener, high molecular weight resin compatible with epoxy resin, epoxy group-containing acrylic copolymer, hardening accelerator, etc. A method for manufacturing a semiconductor device comprising a semi-cured thermosetting resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10276342A JP2000114319A (en) | 1998-09-30 | 1998-09-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10276342A JP2000114319A (en) | 1998-09-30 | 1998-09-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000114319A true JP2000114319A (en) | 2000-04-21 |
Family
ID=17568106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10276342A Pending JP2000114319A (en) | 1998-09-30 | 1998-09-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000114319A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100338523B1 (en) * | 2000-07-20 | 2002-05-30 | 한명수 | A cover tape for carrier tape |
| JP2002212536A (en) * | 2001-01-22 | 2002-07-31 | Hitachi Chem Co Ltd | Adhesive member and method for manufacturing the same, and substrate for mounting semiconductor comprising the adhesive member and semiconductor device using the substrate |
| JP2004006599A (en) * | 2002-04-01 | 2004-01-08 | Renesas Technology Corp | Manufacture of semiconductor device and manufacturing equipment for semiconductor |
| JP2004087677A (en) * | 2002-08-26 | 2004-03-18 | Nitto Denko Corp | Collet and method for picking up chip part using the same |
| JP2007042935A (en) * | 2005-08-04 | 2007-02-15 | Shibaura Mechatronics Corp | Crimping device and crimping method of electronic part |
| CN103000550A (en) * | 2011-09-15 | 2013-03-27 | 株式会社日立高新技术仪器 | Die bonder and bonding method |
| JP2017107926A (en) * | 2015-12-08 | 2017-06-15 | 株式会社新川 | Electronic component mounting device |
| CN110520296A (en) * | 2017-03-30 | 2019-11-29 | 日东电工株式会社 | Heat-resisting release sheet and its manufacturing method |
-
1998
- 1998-09-30 JP JP10276342A patent/JP2000114319A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100338523B1 (en) * | 2000-07-20 | 2002-05-30 | 한명수 | A cover tape for carrier tape |
| JP2002212536A (en) * | 2001-01-22 | 2002-07-31 | Hitachi Chem Co Ltd | Adhesive member and method for manufacturing the same, and substrate for mounting semiconductor comprising the adhesive member and semiconductor device using the substrate |
| JP2004006599A (en) * | 2002-04-01 | 2004-01-08 | Renesas Technology Corp | Manufacture of semiconductor device and manufacturing equipment for semiconductor |
| JP2004087677A (en) * | 2002-08-26 | 2004-03-18 | Nitto Denko Corp | Collet and method for picking up chip part using the same |
| JP2007042935A (en) * | 2005-08-04 | 2007-02-15 | Shibaura Mechatronics Corp | Crimping device and crimping method of electronic part |
| CN103000550A (en) * | 2011-09-15 | 2013-03-27 | 株式会社日立高新技术仪器 | Die bonder and bonding method |
| JP2013065629A (en) * | 2011-09-15 | 2013-04-11 | Hitachi High-Tech Instruments Co Ltd | Die bonder and bonding method |
| CN103000550B (en) * | 2011-09-15 | 2017-04-26 | 捷进科技有限公司 | Die Bonder and Bonding Method |
| JP2017107926A (en) * | 2015-12-08 | 2017-06-15 | 株式会社新川 | Electronic component mounting device |
| CN110520296A (en) * | 2017-03-30 | 2019-11-29 | 日东电工株式会社 | Heat-resisting release sheet and its manufacturing method |
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