JP2000114222A - Method and device for preventing static electricity - Google Patents
Method and device for preventing static electricityInfo
- Publication number
- JP2000114222A JP2000114222A JP10294661A JP29466198A JP2000114222A JP 2000114222 A JP2000114222 A JP 2000114222A JP 10294661 A JP10294661 A JP 10294661A JP 29466198 A JP29466198 A JP 29466198A JP 2000114222 A JP2000114222 A JP 2000114222A
- Authority
- JP
- Japan
- Prior art keywords
- ultrapure water
- tank
- resistance value
- resistance
- ultrasonic vibrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体のウエハー洗
浄に用いる超純水の抵抗値を下げる方法及び装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for reducing the resistance of ultrapure water used for cleaning semiconductor wafers.
【０００２】[0002]
【従来の技術】従来の半導体製造用のウエハー洗浄は、
図２に示すように超純水製造装置２０において、水道水
から製造された超純水が超純水配管２１を経てタンク２
２の下部から供給されて貯えられ、そのタンク２２内の
超純水２３が送水ポンプ２４により送水配管を通してウ
エハー洗浄槽２５へ送られる。ウエハー洗浄槽２５は槽
下部に送水配管に接続されたノズル管２７が設けられて
おり、このノズル管２７には槽底に向けて超純水を吐き
出す多数の穴が形成されている。ノズル管２７から槽内
に吐き出された超純水は整流板２８により整流され、槽
上部へ向けて流れウエハー２６の洗浄が行われる。上記
超純水２３に静電気が発生するとウエハー２６を損傷さ
せる為、静電気防止装置３０が設備されている。従来の
静電気防止装置３０としては、図２において炭酸ガスボ
ンベ３１から炭酸ガスがフィルタ３２を介してタンク２
２の上部と下部から供給することにより超純水２３の比
抵抗値を下げて、ウエハー中の静電気の蓄積を防止する
ものである。2. Description of the Related Art Conventional wafer cleaning for semiconductor manufacturing is performed by:
As shown in FIG. 2, in the ultrapure water producing apparatus 20, ultrapure water produced from tap water passes through an ultrapure water pipe 21 to the tank 2.
The ultrapure water 23 in the tank 22 is supplied to the wafer cleaning tank 25 through a water supply pipe by a water supply pump 24. The wafer cleaning tank 25 is provided with a nozzle pipe 27 connected to a water supply pipe at a lower part of the tank, and the nozzle pipe 27 has a large number of holes for discharging ultrapure water toward the bottom of the tank. The ultrapure water discharged from the nozzle tube 27 into the tank is rectified by the rectifying plate 28, flows toward the upper part of the tank, and the wafer 26 is cleaned. In order to damage the wafer 26 when static electricity is generated in the ultrapure water 23, an antistatic device 30 is provided. As a conventional antistatic device 30, carbon dioxide gas is supplied from a carbon dioxide gas cylinder 31 via a filter 32 to a tank 2 in FIG.
By lowering the specific resistance of the ultrapure water 23 by supplying it from the upper and lower portions of the wafer 2, the accumulation of static electricity in the wafer is prevented.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来の静電気
防止装置は炭酸ガスが水に溶けにくい為、超純水に直接
混合させる方式が採られているが、効率が悪いという問
題があった。本発明の目的は、前記従来技術の問題を解
消し、効率良く超純水の抵抗値を下げることができる静
電気防止装置を提供することにある。However, the conventional antistatic device employs a system in which carbon dioxide gas is directly mixed with ultrapure water because carbon dioxide gas is hardly soluble in water, but has a problem of poor efficiency. SUMMARY OF THE INVENTION It is an object of the present invention to provide an antistatic device capable of solving the above-mentioned problems of the prior art and efficiently reducing the resistance value of ultrapure water.
【０００４】[0004]
【課題を解決するための手段】請求項１の発明に係る静
電気防止方法は超音波振動により超純水を霧化させ種々
の気体と混合させ、超純水抵抗値を下げるようにした構
成にある。また、請求項２の発明に係る静電気防止装置
は気体層を有し、超純水を貯えるタンクと、タンク内の
水面近傍の水中に設置され、超純水を気体層に霧化させ
る為の超音波振動を発生する超音波振動子と、タンク内
の超純水抵抗値を検出する抵抗値検出手段と、抵抗値検
出手段により検出された超純水抵抗値を下げるよう前記
超音波振動子の制御を行う制御手段とを備えた構成にあ
る。更に、請求項３の発明は、請求項２の発明におい
て、制御手段はタンクへ供給される超純水の流量を制御
するようにした構成にある。According to a first aspect of the present invention, there is provided a method for preventing static electricity, wherein ultrapure water is atomized by ultrasonic vibration and mixed with various gases to reduce the resistance of the ultrapure water. is there. The antistatic device according to the second aspect of the present invention has a gas layer and a tank for storing ultrapure water, and is installed in water near the water surface in the tank to atomize the ultrapure water into a gas layer. An ultrasonic vibrator that generates ultrasonic vibration, a resistance value detecting means for detecting an ultrapure water resistance value in the tank, and the ultrasonic vibrator so as to reduce the ultrapure water resistance value detected by the resistance value detecting means. And control means for performing the above control. Further, a third aspect of the present invention is the configuration according to the second aspect, wherein the control means controls a flow rate of the ultrapure water supplied to the tank.
【０００５】[0005]
【発明の作用および効果】本発明によれば、霧化された
超純水と気体をタンク内で混合することにより超純水の
抵抗値を瞬時に下げ、超純水の静電気の発生を防止でき
る為、静電気によって損傷を受けやすい物、例えば半導
体ウエハーの製造に対して有効である。According to the present invention, the resistance value of ultrapure water is instantaneously reduced by mixing atomized ultrapure water and gas in a tank, thereby preventing the generation of static electricity in ultrapure water. Therefore, it is effective for the manufacture of an object easily damaged by static electricity, for example, a semiconductor wafer.
【０００６】[0006]
【発明の実施の態様】本発明の実施例について図面を参
照しながら説明する。図１は本発明の実施例のシステム
構成図である。タンク１は超純水２を貯え、その上方に
空気取入れ口３からフィルタ４を介して種々の気体とし
て空気が取り入れられ、空気層５を形成している。タン
ク１の内壁には超純水の水面近傍の水中に没して、少な
くとも一つの超音波振動子６が設置されており、この超
音波振動子６が作動すると霧化された超純水２Ａが空気
層５に飛散し、空気と混合させて超純水２の中に空気を
溶け込ませるよう作用する。超純水の抵抗値を検出する
手段として、測定用の電極７が超純水２の中に没入され
ている。超純水供給配管２１には超純水をタンク１に供
給する量を調節する流量制御弁８が配設されている。タ
ンク内において、静電気防止処理が施された超純水２は
送水ポンプ２４によりウエハー洗浄槽２５に供給され
る。超純水の抵抗値を低下させる制御を行う制御手段１
０は、電極７間の電気抵抗を測定して超純水の抵抗値を
検出し、この抵抗値に基づいて超音波振動子６のｏｎ−
ｏｆｆ及び流量制御弁８の開度を制御する。超純水の中
に溶け込ませる空気量と超純水の供給量を調節すること
により、半導体ウエハーの洗浄時に静電気による損傷を
与えない為の超純水の抵抗値を下げることができる。超
純水を気体と接触させる為に、上記実施例では超音波振
動子を用いて超純水を霧化させているが、他の方式とし
て、攪拌装置により超純水を攪拌させるものや電気ヒー
タにより超純水を蒸発させるものなどが適用可能であ
る。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a system configuration diagram of an embodiment of the present invention. The tank 1 stores ultrapure water 2, and air is taken in as various gases from an air intake 3 through a filter 4 above the ultrapure water 2 to form an air layer 5. At least one ultrasonic vibrator 6 is installed on the inner wall of the tank 1 so as to be submerged in the water near the surface of the ultrapure water, and when the ultrasonic vibrator 6 operates, the atomized ultrapure water 2A Scatters in the air layer 5 and acts to mix the air and dissolve the air into the ultrapure water 2. As a means for detecting the resistance value of the ultrapure water, a measurement electrode 7 is immersed in the ultrapure water 2. The ultrapure water supply pipe 21 is provided with a flow control valve 8 for adjusting the amount of ultrapure water supplied to the tank 1. In the tank, the ultrapure water 2 subjected to the antistatic treatment is supplied to a wafer cleaning tank 25 by a water supply pump 24. Control means 1 for controlling to reduce the resistance value of ultrapure water
0 indicates that the electric resistance between the electrodes 7 is measured to detect the resistance value of the ultrapure water, and the on-
off and the opening of the flow control valve 8 are controlled. By adjusting the amount of air dissolved in the ultrapure water and the supply amount of the ultrapure water, the resistance value of the ultrapure water can be reduced so as not to damage the semiconductor wafer by static electricity during cleaning. In order to bring the ultrapure water into contact with the gas, in the above embodiment, the ultrapure water is atomized using an ultrasonic vibrator. A device in which ultrapure water is evaporated by a heater is applicable.
【図１】本発明に係る静電気防止装置の実施例のシステ
ム構成図である。FIG. 1 is a system configuration diagram of an embodiment of an antistatic device according to the present invention.
【図２】従来の半導体製造用ウエハ洗浄の系統図であ
る。FIG. 2 is a system diagram of a conventional semiconductor manufacturing wafer cleaning.
１ タンク ２ 超純水 ２Ａ 霧化された超純水 ３ 空気取入れ口 ４ フィルタ ５ 気体層 ６ 超音波振動子 ７ 超純水抵抗値検出用電極 ８ 流量制御弁 １０ 制御手段 DESCRIPTION OF SYMBOLS 1 Tank 2 Ultrapure water 2A Atomized ultrapure water 3 Air intake 4 Filter 5 Gas layer 6 Ultrasonic vibrator 7 Ultrapure water resistance detection electrode 8 Flow control valve 10 Control means
Claims (3)
の気体と混合させ、超純水抵抗値を下げて静電気の発生
を防止する方法。1. A method of atomizing ultrapure water by ultrasonic vibration and mixing it with various gases to reduce the resistance value of the ultrapure water to prevent generation of static electricity.
と、 前記タンク内の水面近傍の水中に設置され、超純水を前
記気体層に霧化させる為の超音波振動を発生する超音波
振動子と、 前記タンク内の超純水抵抗値を検出する抵抗値検出手段
と、 前記抵抗値検出手段により検出された超純水抵抗値を下
げるよう前記超音波振動子の制御を行う制御手段と、を
備えた静電気防止装置。2. A tank having a gas layer and storing ultrapure water, and installed in water near a water surface in the tank to generate ultrasonic vibration for atomizing ultrapure water into the gas layer. An ultrasonic vibrator, a resistance value detecting means for detecting an ultrapure water resistance value in the tank, and controlling the ultrasonic vibrator so as to reduce the ultrapure water resistance value detected by the resistance value detecting means. An antistatic device comprising: a control unit.
水の流量を制御することを特徴とする請求項２記載の静
電気防止装置。3. The antistatic device according to claim 2, wherein said control means controls a flow rate of ultrapure water supplied to the tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29466198A JP3454169B2 (en) | 1998-10-01 | 1998-10-01 | Antistatic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29466198A JP3454169B2 (en) | 1998-10-01 | 1998-10-01 | Antistatic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000114222A true JP2000114222A (en) | 2000-04-21 |
| JP3454169B2 JP3454169B2 (en) | 2003-10-06 |
Family
ID=17810670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29466198A Expired - Fee Related JP3454169B2 (en) | 1998-10-01 | 1998-10-01 | Antistatic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3454169B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166815A (en) * | 2018-09-18 | 2019-01-08 | 福建闽芯科技有限公司 | A kind of cleaning device and its cleaning method for CMP processing procedure |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101850344A (en) * | 2010-05-28 | 2010-10-06 | 上海集成电路研发中心有限公司 | Semiconductor part cleaning device and cleaning method |
| KR101977860B1 (en) * | 2017-11-17 | 2019-05-16 | 주식회사 팀즈 | A device for controlling the resistivity of filtered ultrapure water with dissoluble gases |
-
1998
- 1998-10-01 JP JP29466198A patent/JP3454169B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166815A (en) * | 2018-09-18 | 2019-01-08 | 福建闽芯科技有限公司 | A kind of cleaning device and its cleaning method for CMP processing procedure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3454169B2 (en) | 2003-10-06 |
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