JP2000100883A - Semiconductor check device - Google Patents
Semiconductor check deviceInfo
- Publication number
- JP2000100883A JP2000100883A JP10267121A JP26712198A JP2000100883A JP 2000100883 A JP2000100883 A JP 2000100883A JP 10267121 A JP10267121 A JP 10267121A JP 26712198 A JP26712198 A JP 26712198A JP 2000100883 A JP2000100883 A JP 2000100883A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- microscope
- electron microscope
- electron
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、真空室内のウエハ
に電子線を走査し、半導体の表面状態を観察する検査装
置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an inspection apparatus for scanning a wafer in a vacuum chamber with an electron beam and observing a surface state of a semiconductor.
【０００２】[0002]
【従来の技術】図1は従来の走査型電子顕微鏡の構成を
示す断面図である。ａの電子銃から放出された電子線が
各種コンデンサを通って、ウエハに照射される。その時
ウエハから放出される二次電子をｂにより検出し、ＣＲ
Ｔ等に画像を合成する。2. Description of the Related Art FIG. 1 is a sectional view showing the configuration of a conventional scanning electron microscope. The electron beam emitted from the electron gun a is irradiated on the wafer through various capacitors. At that time, secondary electrons emitted from the wafer are detected by b, and CR
The image is synthesized with T or the like.
【０００３】各種異物検査装置・パターン欠陥検査装置
で、ある定められたウエハ原点からの欠陥の相対位置座
標を求め、その座標を用いて電子顕微鏡で観察する場
合、または、ウエハ原点からある特定の距離にあるパタ
ーンの形状等を観察する場合、いずれの場合もウエハの
原点を電子顕微鏡像からその位置を特定し、そこからの
相対的な距離を用いて観察したい欠陥または特定パター
ンの位置を求める。[0003] Various foreign matter inspection devices / pattern defect inspection devices determine the relative position coordinates of a defect from a predetermined wafer origin and observe it with an electron microscope using the coordinates, or a specific defect from the wafer origin. When observing the shape of a pattern at a distance, in any case, the position of the origin of the wafer is specified from an electron microscope image, and the position of a defect or a specific pattern to be observed is obtained using a relative distance therefrom. .
【０００４】[0004]
【発明が解決しようとする課題】ウエハの原点を電子顕
微鏡像から探す際に、原点となるパターンを酸化膜・窒
化膜などが覆っている場合、表面の凹凸が緩やかになっ
ている。二次電子は膜の表面から１〜２ｎｍから発生す
るため膜の最表面しか捕らえられない。従って、凹凸が
緩やかな状態では膜の下にある原点を探し出すことがで
きない。When the origin of the wafer is searched for from the electron microscope image, if the oxide film / nitride film covers the pattern serving as the origin, the unevenness of the surface becomes gentle. Since secondary electrons are generated from 1 to 2 nm from the surface of the film, only the outermost surface of the film can be captured. Therefore, it is impossible to find the origin under the film in a state where the unevenness is gentle.
【０００５】本発明では、酸化膜・窒化膜等によって原
点のパターンが覆われている場合に、その原点の座標を
明らかにし、目的の欠陥・パターンの位置を求めること
に役立てることを目的とする。It is an object of the present invention to clarify the coordinates of the origin when the pattern of the origin is covered with an oxide film, a nitride film, or the like, and to use it for finding the position of a target defect / pattern. .
【０００６】[0006]
【課題を解決するための手段】本発明は、電子顕微鏡の
真空室内に光学顕微鏡を併設することにより、酸化膜・
窒化膜等の光透過性の膜の下にある原点パターンの位置
を同一ステージ上で特定するものである。SUMMARY OF THE INVENTION According to the present invention, an optical film is formed by installing an optical microscope in a vacuum chamber of an electron microscope.
The position of the origin pattern under a light-transmitting film such as a nitride film is specified on the same stage.
【０００７】[0007]
【作用】本発明においては、光学顕微鏡により、光透過
性の膜の下にある原点パターンの位置を特定することが
できる。In the present invention, the position of the origin pattern under the light-transmitting film can be specified by an optical microscope.
【０００８】[0008]
【発明の実施の形態】本発明の実施例を図について説明
する。図１は、本発明の実施例による光学レンズ付き走
査型電子顕微鏡の断面の模式図である。電子銃・コンデ
ンサ・受光部等の電子顕微鏡部は、図２と同様である。
これと平行に光源・光学レンズ等からなる光学顕微鏡を
設置する。ウエハステージは電子顕微鏡と光学式顕微鏡
のどちらも稼動範囲におさめており、どちらの顕微鏡で
もウエハの一部または全ての部分を観察することができ
る。また、ステージコントローラに電子顕微鏡と光学式
顕微鏡の距離Aを記憶しておき、スイッチまたはそれに
準ずる操作にてウエハを距離Aだけ移動させることによ
りどちらの顕微鏡でもウエハの同じ場所を観察すること
ができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of a cross section of a scanning electron microscope with an optical lens according to an embodiment of the present invention. An electron microscope unit such as an electron gun, a condenser, and a light receiving unit is the same as in FIG.
An optical microscope consisting of a light source, an optical lens, etc. is installed in parallel with this. The wafer stage has both an electron microscope and an optical microscope within its operating range, and both microscopes can observe a part or all of the wafer. In addition, the distance A between the electron microscope and the optical microscope is stored in the stage controller, and the same position on the wafer can be observed with either microscope by moving the wafer by the distance A with a switch or an equivalent operation. .
【０００９】ウエハの原点または原点に希望するパター
ンの上に酸化膜等が堆積していることにより電子顕微鏡
ではパターンの区別がつきにくい場合、上記ステージを
距離Aだけ移動させて光学式顕微鏡にてウエハの原点の
位置を求めることができる。原点が定まることにより、
希望する欠陥またはパターン等を相対座標から探し出す
ことができる。同じことが距離Aだけずらすことにより
電子顕微鏡部でも行うことができる。When it is difficult to distinguish the pattern with an electron microscope because an oxide film or the like is deposited on the origin of the wafer or a desired pattern at the origin, the stage is moved by a distance A and the optical microscope is used. The position of the origin of the wafer can be obtained. By setting the origin,
A desired defect or pattern can be found from the relative coordinates. The same can be done in the electron microscope section by shifting the distance A.
【００１０】[0010]
【発明の効果】本発明により、走査型電子顕微鏡と光学
式顕微鏡を併設することにより、電子顕微鏡では見分け
がつきにくいウエハ上の原点の位置を特定できるため、
その原点から相対的な位置が分かっている欠陥あるいは
観察したいパターンの位置を求めることができる。According to the present invention, by providing a scanning electron microscope and an optical microscope side by side, it is possible to specify the position of the origin on the wafer which is difficult to distinguish with an electron microscope.
From the origin, the position of a defect whose relative position is known or the position of a pattern to be observed can be obtained.
【図１】本発明の実施例による光学顕微鏡を併設した電
子顕微鏡の断面図である。FIG. 1 is a sectional view of an electron microscope provided with an optical microscope according to an embodiment of the present invention.
【図２】従来の電子顕微鏡の断面図である。FIG. 2 is a sectional view of a conventional electron microscope.
１．電子銃 ２．コンデンサ部 ３．二次電子受光部 ４．ウエハステージ ５．ステージコントローラ ６．光源ランプ ７．光学式レンズ ８．ハーフミラー ９．接眼レンズおよびカメラ部 1. Electron gun 2. 2. Capacitor section Secondary electron receiving unit 4. 4. Wafer stage Stage controller 6. Light source lamp 7. Optical lens 8. Half mirror 9. Eyepiece and camera
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2G001 AA03 AA07 BA07 BA14 CA03 CA07 FA06 FA11 GA01 GA04 GA06 HA01 HA07 HA13 JA13 JA14 KA03 LA11 MA05 PA07 PA11 RA08 2G032 AE09 AF08 2G051 AA51 AB07 AC21 CB01 CB05 DA06 EA08 EA12 4M106 AA01 BA02 BA10 CA39 CA50 DB05 DB18 DJ04 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2G001 AA03 AA07 BA07 BA14 CA03 CA07 FA06 FA11 GA01 GA04 GA06 HA01 HA07 HA13 JA13 JA14 KA03 LA11 MA05 PA07 PA11 RA08 2G032 AE09 AF08 2G051 AA51 AB07 AC21 CB01 CB05 DA02 EA08 A12 BA02 4 BA10 CA39 CA50 DB05 DB18 DJ04
Claims (1)
察できる半導体検査装置。A semiconductor inspection apparatus capable of observing an electron microscope image and an optical image in the same vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10267121A JP2000100883A (en) | 1998-09-21 | 1998-09-21 | Semiconductor check device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10267121A JP2000100883A (en) | 1998-09-21 | 1998-09-21 | Semiconductor check device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000100883A true JP2000100883A (en) | 2000-04-07 |
Family
ID=17440371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10267121A Withdrawn JP2000100883A (en) | 1998-09-21 | 1998-09-21 | Semiconductor check device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000100883A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104820299A (en) * | 2014-01-31 | 2015-08-05 | 有限会社共同设计企画 | Electronic part detection device |
| JP2015184943A (en) * | 2014-03-25 | 2015-10-22 | 株式会社日立製作所 | positioning control device |
-
1998
- 1998-09-21 JP JP10267121A patent/JP2000100883A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104820299A (en) * | 2014-01-31 | 2015-08-05 | 有限会社共同设计企画 | Electronic part detection device |
| JP2015184943A (en) * | 2014-03-25 | 2015-10-22 | 株式会社日立製作所 | positioning control device |
| US9673021B2 (en) | 2014-03-25 | 2017-06-06 | Hitachi, Ltd. | Positioning control device |
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