JP2000099988A - Memory member - Google Patents
Memory memberInfo
- Publication number
- JP2000099988A JP2000099988A JP10265020A JP26502098A JP2000099988A JP 2000099988 A JP2000099988 A JP 2000099988A JP 10265020 A JP10265020 A JP 10265020A JP 26502098 A JP26502098 A JP 26502098A JP 2000099988 A JP2000099988 A JP 2000099988A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substance
- recording
- layer
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 60
- 239000000126 substance Substances 0.000 claims abstract description 55
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 238000003860 storage Methods 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 9
- 239000000470 constituent Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 abstract description 35
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 10
- 229910052718 tin Inorganic materials 0.000 abstract description 5
- 229910020830 Sn-Bi Inorganic materials 0.000 abstract description 4
- 229910018728 Sn—Bi Inorganic materials 0.000 abstract description 4
- 230000005496 eutectics Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 43
- 239000000463 material Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 239000012071 phase Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000009257 reactivity Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910005839 GeS 2 Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910008813 Sn—Si Inorganic materials 0.000 description 1
- 229910007609 Zn—S Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- DZXKSFDSPBRJPS-UHFFFAOYSA-N tin(2+);sulfide Chemical compound [S-2].[Sn+2] DZXKSFDSPBRJPS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
(57)【要約】
【課題】 少なくとも第１の物質と第２の物質とからな
り、前記両物質に外部エネルギーを付与し反応させるこ
とにより、光学特性を変化させて情報を記録する記憶部
材において、記録特性を劣化させるような両物質の反応
を抑制する。
【解決手段】 記憶部材としての光ディスク１００は、
基板１上に、第１層（第１の物質）としてのＧｅＳｘ
（１＜ｘ≦２）膜２、第２層（第２の物質）としてのＳ
ｎ−５７ｗｔ％Ｂｉ膜３が順次形成されている。両膜
２、３により記録膜１０が構成され、外部エネルギーと
してレーザ光の付与により両膜２、３が反応し情報が記
録される。Ｓｎ−５７ｗｔ％Ｂｉ膜３は共晶性の金属で
あり、ＳｎまたはＳｎ成分の多いＳｎ−Ｂｉからなる反
応性の高い微細領域Ｐと、ＢｉまたはＢｉ成分の多いＳ
ｎ−Ｂｉからなる反応性の低い微細領域Ｑとの少なくと
も２つ以上の相から構成されている。
(57) Abstract: A storage member comprising at least a first substance and a second substance, and by applying external energy to the two substances and causing them to react with each other, changes in optical characteristics and records information. In addition, the reaction between the two substances that degrades the recording characteristics is suppressed. SOLUTION: An optical disc 100 as a storage member includes:
GeSx as a first layer (first substance) on a substrate 1
(1 <x ≦ 2) film 2, S as second layer (second substance)
An n-57 wt% Bi film 3 is sequentially formed. A recording film 10 is formed by the two films 2 and 3. The two films 2 and 3 react by application of a laser beam as external energy, and information is recorded. The Sn-57 wt% Bi film 3 is a eutectic metal, and has a highly reactive fine region P composed of Sn or Sn-rich Sn-Bi and a Bi or Bi-rich Bi.
It is composed of at least two or more phases with a low-reactivity fine region Q made of n-Bi.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、少なくとも第１の
物質と第２の物質とからなり、これら両物質の少なくと
も一方の物質に外部エネルギーを付与し反応させること
により、光学特性を変化させて情報を記録する記憶部材
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device comprising at least a first substance and a second substance, wherein at least one of the two substances is given an external energy to cause a reaction to change the optical properties. The present invention relates to a storage member for recording information.
【０００２】[0002]
【従来の技術】従来、この種の異なる２種類の物質の反
応によって情報記録を行なう記憶部材として、例えば、
低融点金属（Ｉｎ、Ｚｎ）と硫化物（ＧｅＳｘ）との混
合膜（単層膜）を記録膜とする光記録部材（特開昭６２
−２２６４４２号公報参照）や、Ａｌ、ＣｕまたはＡｇ
等からなる金属層（第１層）とＳまたはＳｅまたはこれ
らの混合物よりなる層（第２層）との積層膜を記録膜と
する光記録部材（特開平２−１５２０２９号公報参照）
がある。2. Description of the Related Art Conventionally, as a storage member for recording information by the reaction of two kinds of different substances of this kind, for example,
An optical recording member using a mixed film (single-layer film) of a low melting point metal (In, Zn) and a sulfide (GeSx) as a recording film (Japanese Patent Laid-Open No. Sho 62)
-226442), Al, Cu or Ag
Optical recording member having a laminated film of a metal layer (first layer) made of a material such as S and Se or a layer (second layer) made of a mixture thereof (see Japanese Patent Application Laid-Open No. 2-152029).
There is.
【０００３】これらの記録膜は、蒸着やスパッタリング
等にて成膜される。また記録膜は反応性を有し、記録用
レーザ光を照射（外部エネルギーを付与）することによ
って記録膜中の２種の物質が反応して、反射率等の光学
特性が変化するため、情報を記録することができる。[0003] These recording films are formed by vapor deposition or sputtering. In addition, the recording film has reactivity, and by irradiating a recording laser beam (by applying external energy), two kinds of substances in the recording film react to change optical characteristics such as reflectivity. Can be recorded.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記前
者公報においては、実施例中に、共蒸着等によって低融
点金属（Ｉｎ等）と硫化物ＧｅＳの混合膜を形成するこ
とが記載されているが、本発明者等の検討によれば、膜
の形成途中で金属と硫化物との両物質の反応がかなり進
行し、結果として全体の反射率は相当低くなる可能性が
あるため、実用上通常の光記録部材としては問題がある
と考えられる。However, the former publication discloses that a mixed film of a low-melting-point metal (such as In) and sulfide GeS is formed in a working example by co-evaporation or the like. According to the study of the present inventors, the reaction between both the metal and the sulfide significantly progresses during the formation of the film, and as a result, the overall reflectivity may be considerably low. It is considered that there is a problem with the optical recording member of (1).
【０００５】また、後者公報においては、実施例中に、
反応性の高い金属（Ａｇ等）とＳとの積層構造等が示さ
れているが、本発明者等の検討によれば、この様な系
は、非記録時においても互いの層が反応してしまう等、
経時劣化が厳しいことが容易に判断され、実用上、通常
の記録材料としては問題があると考えられる。また、実
施例で挙げられているＣ／Ｎ（ｃａｒｒｉｅｒ ｔｏ
ｎｏｉｓｅ ｒａｔｉｏ、キャリアーとノイズの出力レ
ベルの比）は良好な特性を示していない。Further, in the latter publication,
Although a laminated structure of a highly reactive metal (Ag or the like) and S is shown, according to the studies of the present inventors, such a system shows that the mutual layers react even during non-recording. Etc.
It is easily determined that deterioration with time is severe, and it is considered that there is a problem in practical use as a normal recording material. In addition, C / N (carrier to carrier) described in the embodiment is used.
noise ratio, the ratio of the carrier and noise output levels) does not show good characteristics.
【０００６】このように、従来の記憶部材においては、
成膜過程における反応や経時劣化等、記録用の両物質に
おいて不要な反応が進行し、成膜時及び使用時において
反射率等の記録特性が劣化するという問題がある。そこ
で、本発明は上記点に鑑みて、少なくとも第１の物質と
第２の物質とからなり、前記両物質の少なくとも一方の
物質に外部エネルギーを付与し反応させることにより、
光学特性を変化させて情報を記録する記憶部材におい
て、記録特性を劣化させるような両物質の反応を抑制す
ることを目的とする。As described above, in the conventional memory member,
There is a problem in that an unnecessary reaction proceeds in both recording materials, such as a reaction in a film forming process and deterioration with time, and recording characteristics such as reflectance are deteriorated in film forming and in use. In view of the above, the present invention comprises at least a first substance and a second substance, and by applying external energy to at least one of the two substances to cause a reaction,
It is an object of the present invention to suppress a reaction between both substances that deteriorates recording characteristics in a storage member that records information by changing optical characteristics.
【０００７】[0007]
【課題を解決するための手段】本発明は、少なくとも記
録用物質としての第１の物質と第２の物質からなる記憶
部材において両物質の組合せを工夫することによってな
されたものである。即ち、本発明の記憶部材は、少なく
とも第１の物質（２、１２）と第２の物質（３、１３）
とからなり、これら両物質（２、３、１２、１３）の少
なくとも一方の物質に外部エネルギーを付与し反応させ
ることにより、光学特性を変化させて情報を記録する記
憶部材であって、第１の物質（２、１２）が、Ｓおよび
Ｓｅのうち少なくとも１つの元素を構成要素とする物質
であり、第２の物質（３、１３）が、該物質中に２つ以
上の組成部分または２つ以上の結晶状態の異なる相が存
在する物質であることを特徴としている。SUMMARY OF THE INVENTION The present invention has been made by devising a combination of at least a recording material composed of a first material and a second material as a recording material. That is, the memory member of the present invention comprises at least the first substance (2, 12) and the second substance (3, 13)
A storage member for recording information by changing optical characteristics by applying external energy to at least one of these two substances (2, 3, 12, 13) to cause a reaction. Is a substance containing at least one element of S and Se as a constituent element, and the second substance (3, 13) contains two or more composition parts or 2 in the substance. It is a substance in which two or more phases having different crystal states exist.
【０００８】本発明では、第２の物質（３、１３）を、
２つ以上の組成部分または２つ以上の結晶状態の異なる
相が存在する物質としている。そのため、第２の物質
（３、１３）において、第１の物質（２、１２）に対し
て反応し易い組成部分と反応しにくい組成部分とを混在
させたり、あるいは、結晶状態を異ならせることで固体
拡散の度合を変え、反応性の高い相と反応性の低い相と
を混在させることができる。In the present invention, the second substance (3, 13) is
The substance is a substance in which two or more composition parts or two or more phases having different crystal states exist. For this reason, in the second substance (3, 13), a composition part that easily reacts with the first substance (2, 12) and a composition part that does not easily react are mixed, or the crystal state is changed. , The degree of solid diffusion can be changed, and a highly reactive phase and a less reactive phase can be mixed.
【０００９】従って、本発明では、第２の物質（３、１
３）の組成または結晶状態を適宜選択することにより、
成膜時又は使用時において、上記反応性の低い相が一種
の反応障壁の役割を果たすと考えられ、記録特性を劣化
させるような両物質（２、３、１２、１３）の不要な反
応を抑制できる。なお、上記した括弧内の符号は、後述
する実施形態記載の具体的手段との対応関係を示す一例
である。Therefore, in the present invention, the second substance (3, 1
By appropriately selecting the composition or crystal state of 3),
At the time of film formation or use, it is considered that the low-reactive phase plays a role of a kind of reaction barrier, and an unnecessary reaction of both substances (2, 3, 12, 13) that degrades recording characteristics is considered. Can be suppressed. In addition, the code | symbol in a parenthesis mentioned above is an example which shows the correspondence with the concrete means of embodiment described later.
【００１０】[0010]
【発明の実施の形態】（第１実施形態）本第１実施形態
の記憶部材は、外部エネルギーとしてのレーザ光を第１
の物質と第２の物質とを有する記録膜に付与することに
より情報を記録する光ディスクに適用したものである。
図１に、本実施形態に係る光ディスク１００の一部断面
構成を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A storage member according to a first embodiment of the present invention uses a laser beam as external energy for a first time.
The present invention is applied to an optical disc that records information by applying it to a recording film having the above substance and the second substance.
FIG. 1 shows a partial cross-sectional configuration of an optical disc 100 according to the present embodiment.
【００１１】光ディスク１００は全体として円盤状をな
しており、図１に示す様に複数の層が積層形成されたも
のである。１は円盤（例えば厚さ１．２ｍｍ）状に形成
された例えばポリカーボネイト製の透明な基板であり、
光情報の記録、再生のためのレーザ光は、基板１の一方
面１ａから矢印Ａのように入射する。基板１のレーザ光
入射側である一方面１ａは鏡面であり、他方面１ｂには
レーザ光を導くためのスパイラル又は同心円状の案内溝
（トラック）１ｃが形成されている。The optical disk 100 has a disk shape as a whole, and is formed by laminating a plurality of layers as shown in FIG. Reference numeral 1 denotes a transparent substrate made of, for example, polycarbonate and formed in a disk (for example, thickness of 1.2 mm),
A laser beam for recording and reproducing optical information enters from one surface 1a of the substrate 1 as shown by an arrow A. One surface 1a of the substrate 1 on the laser light incident side is a mirror surface, and a spiral or concentric guide groove (track) 1c for guiding the laser light is formed on the other surface 1b.
【００１２】基板１の他方面１ｂ上には、第１層（第１
の物質）としてのＧｅＳｘ（１＜ｘ≦２）膜２が形成さ
れ、ＧｅＳｘ膜２の上には、第２層（第２の物質）とし
てのＳｎ−５７ｗｔ％Ｂｉ膜３が形成されている。上記
両膜２、３により、光ディスク１００における記録膜１
０が構成される。さらに、Ｓｎ−５７ｗｔ％Ｂｉ膜３の
上には、記録膜１０を覆って保護するための紫外線硬化
樹脂からなる樹脂膜（保護膜）４が形成されている。On the other surface 1b of the substrate 1, a first layer (first
GeSx (1 <x ≦ 2) film 2 is formed as a second material (a second material). A Sn-57 wt% Bi film 3 is formed as a second layer (a second material) on the GeSx film 2. . The recording film 1 in the optical disc 100 is formed by the two films 2 and 3.
0 is configured. Further, on the Sn-57 wt% Bi film 3, a resin film (protective film) 4 made of an ultraviolet curable resin for covering and protecting the recording film 10 is formed.
【００１３】次に、光ディスク１００の一製造方法を具
体例により説明する。一方面１ａを鏡面、他方面１ｂに
案内溝１ｃを形成した、厚さ１．２ｍｍのポリカーボネ
イト製円盤である基板１を用意し、基板１の他方面１ｂ
上に、まず、ＲＦマグネトロンスパッタ法により、Ｇｅ
Ｓｘ膜２を、スパッタガス種：Ａｒ、スパッタガス圧：
４×１０-3Ｔｏｒｒ、投入電力：５０〜３００Ｗの成膜
条件にて、ＧｅＳ2 ターゲットを用いて１４６ｎｍ成膜
した。Next, a method for manufacturing the optical disk 100 will be described with reference to a specific example. A substrate 1, which is a polycarbonate disk having a thickness of 1.2 mm and having a mirror surface on one surface 1a and a guide groove 1c on the other surface 1b, is prepared, and the other surface 1b of the substrate 1 is prepared.
First, Ge is formed by RF magnetron sputtering.
The Sx film 2 was formed using a sputtering gas of Ar type and a sputtering gas pressure of Ar.
A film of 146 nm was formed using a GeS 2 target under the conditions of 4 × 10 −3 Torr and input power of 50 to 300 W.
【００１４】引き続き、ＤＣスパッタ法により、Ｓｎ−
５７ｗｔ％Ｂｉ膜３を、スパッタガス種：Ａｒ、スパッ
タガス圧：４×１０-3Ｔｏｒｒ、投入電力：５０〜３０
０Ｗの成膜条件により、Ｓｎ−５７ｗｔ％Ｂｉターゲッ
トを用いて、５０ｎｍ成膜した。最後に、紫外線硬化樹
脂をスピンコート法により塗布し、高圧水銀ランプを用
いて該紫外線硬化樹脂を硬化させて樹脂膜４を形成し、
光ディスク１００を作製した。Subsequently, the Sn-
A 57 wt% Bi film 3 is prepared by sputtering a sputtering gas of Ar type, a sputtering gas pressure of 4 × 10 −3 Torr, and an input power of 50 to 30.
Under a film forming condition of 0 W, a film was formed to a thickness of 50 nm using a Sn-57 wt% Bi target. Finally, an ultraviolet curable resin is applied by a spin coating method, and the ultraviolet curable resin is cured using a high-pressure mercury lamp to form a resin film 4,
The optical disc 100 was manufactured.
【００１５】本実施形態に係る光ディスク１００の記録
作用は、次のようである。案内溝１ｃ部分において、矢
印Ａから入射（照射）される記録用レーザ光は、Ｓｎ−
５７ｗｔ％Ｂｉ膜３面に集光され、ＧｅＳｘ膜２とＳｎ
−５７ｗｔ％Ｂｉ膜３とが化学反応する。そのため、反
射部分の光学特性（反射率等）が変化し、情報を記録す
ることができる。なお、ＧｅＳｘ膜２とＳｎ−５７ｗｔ
％Ｂｉ膜３との反応においては、硫化物（ＳｎＳ、Ｓｎ
Ｓ2 ）等が形成されると考えられる。The recording operation of the optical disc 100 according to this embodiment is as follows. In the guide groove 1c, the recording laser light incident (irradiated) from the arrow A is Sn-
The light is condensed on the 57 wt% Bi film 3 surface, and the GeSx film 2 and Sn
A chemical reaction occurs with the −57 wt% Bi film 3. For this reason, the optical characteristics (reflectance and the like) of the reflection portion change, and information can be recorded. The GeSx film 2 and Sn-57 wt
% Bi film 3 reacts with sulfides (SnS, SnS).
It is considered that S 2 ) and the like are formed.
【００１６】上記製造方法にて製造された光ディスク１
００に、鏡面（一方面１ａ）側から、波長：７８０ｎｍ
のレーザ光（記録用レーザ光）を、ＮＡ（開口数）：
０．５の対物レンズを通して、Ｓｎ−５７ｗｔ％Ｂｉ膜
３面上に集光し、記録を行った。このときの照射条件
は、線速度：２．８ｍ／ｓｅｃ、記録周波数：４００ｋ
Ｈｚ、記録レーザ波形：デューティー比５０％の矩形
波、とした。Optical disc 1 manufactured by the above-described manufacturing method
00, from the mirror surface (one surface 1a) side, wavelength: 780 nm
Laser light (recording laser light) with NA (numerical aperture):
The light was condensed on the Sn-57 wt% Bi film 3 surface through a 0.5 objective lens, and recording was performed. The irradiation conditions at this time were as follows: linear velocity: 2.8 m / sec, recording frequency: 400 k
Hz, recording laser waveform: rectangular wave with a duty ratio of 50%.
【００１７】このときの光ディスク１００の特性（記録
特性）は、図２に示す様に、未記録部反射率：６５％、
記録レーザパワー：７ｍＷ、Ｃ／Ｎ：５２ｄＢ、変調
度：８５％であった。なお、変調度は、記録前の反射率
から記録後の反射率を引いた値を記録前の反射率で割っ
た値である。次に、図２に、第２層として、Ｓｎ−５７
ｗｔ％Ｂｉ膜３の代わりに、Ｓｎ膜５を用いた本発明の
比較例を示す。このときの光ディスク１００の特性（記
録特性）は、未記録部反射率：３０％、記録レーザパワ
ー：６ｍＷ、Ｃ／Ｎ：４７ｄＢ、変調度：８５％であっ
た。As shown in FIG. 2, the characteristics (recording characteristics) of the optical disc 100 are as follows.
The recording laser power was 7 mW, the C / N was 52 dB, and the modulation was 85%. The modulation is a value obtained by subtracting the reflectance after recording from the reflectance before recording and dividing the value by the reflectance before recording. Next, in FIG. 2, Sn-57 is used as the second layer.
A comparative example of the present invention using an Sn film 5 instead of the wt% Bi film 3 is shown. At this time, the characteristics (recording characteristics) of the optical disc 100 were as follows: unrecorded portion reflectance: 30%, recording laser power: 6 mW, C / N: 47 dB, modulation degree: 85%.
【００１８】本実施形態の光ディスク１００は、上記比
較例に比べて、特に反射率（未記録部反射率）が格段に
高く、且つ、反射率（未記録部反射率）、記録パワー、
Ｃ／Ｎ、変調度の特性バランスが優れていることがわか
る。これは、特に、成膜時において、第２層にＳｎ膜５
を用いた場合、第１層のＧｅＳｘ膜２とＳｎ膜５との反
応が進行してしまうのに対し、第２層にＳｎ−５７ｗｔ
％Ｂｉ膜３を用いた場合、第１層のＧｅＳｘ膜２とＳｎ
−５７ｗｔ％Ｂｉ膜３との反応が抑制されているためで
ある。The optical disk 100 of the present embodiment has a particularly high reflectance (unrecorded portion reflectance), a high reflectance (unrecorded portion reflectance), recording power,
It can be seen that the characteristic balance of C / N and modulation is excellent. This is particularly because the Sn film 5 is formed on the second layer during film formation.
In the case where is used, the reaction between the GeSx film 2 of the first layer and the Sn film 5 progresses, whereas Sn-57 wt.
% Bi film 3, the first layer GeSx film 2 and Sn
This is because the reaction with the −57 wt% Bi film 3 is suppressed.
【００１９】また、これら２つの光ディスク１００につ
いて、５５℃、９６時間の耐環境試験を行なったとこ
ろ、本実施形態の光ディスク１００では、記録したデー
タが再生可能であったのに対し、比較例の光ディスク１
００では、記録したデータを再生することは不可能であ
った。以上の様に、本実施形態の光ディスク１００が、
従来の光ディスクに比べて、反射率、記録パワー、Ｃ／
Ｎ、変調度の特性バランスが優れているのは、以下の効
果によると考えられる。When an environment resistance test was performed on these two optical discs 100 at 55 ° C. for 96 hours, the recorded data could be reproduced on the optical disc 100 of the present embodiment, whereas the recorded data could be reproduced on the optical disc 100 of the comparative example. Optical disk 1
00, it was impossible to reproduce the recorded data. As described above, the optical disc 100 of the present embodiment
Compared to conventional optical discs, reflectivity, recording power, C /
The reason why the characteristic balance between N and the degree of modulation is excellent is considered to be due to the following effects.
【００２０】先ず、第２層の物質が同じＳｎを含有する
場合においても、成膜時の反応性が大きく異なる効果が
得られる原因としては、以下のように考えられる。もと
もと、ＧｅＳｘとＳｎは反応し易い物質同士である。し
かし、本実施形態のように、第２層にＳｎ−５７ｗｔ％
Ｂｉを用いた場合、第２層は、ＳｎまたはＳｎ成分の多
いＳｎ−Ｂｉの微細な領域Ｐと、ＢｉまたはＢｉ成分の
多いＳｎ−Ｂｉの微細な領域Ｑとの少なくとも２つ以上
の相から構成されることになる。First, even when the material of the second layer contains the same Sn, the reason why the effect of greatly different reactivity during film formation can be obtained is considered as follows. Originally, GeSx and Sn are easily reactive substances. However, as in the present embodiment, Sn-57 wt% is contained in the second layer.
In the case of using Bi, the second layer is formed of at least two or more phases of a fine region P of Sn-Bi containing a large amount of Sn or Sn and a fine region Q of Sn-Bi containing a large amount of Bi or Bi. Will be composed.
【００２１】これは、Ｓｎ−５７ｗｔ％Ｂｉ金属が、共
晶性の金属であることと、融点が約１３９℃と低いこと
による。なお、領域Ｐの結晶は正方構造を有し、領域Ｑ
の結晶は菱面体構造を有する。従って、本実施形態の場
合、第１層のＧｅＳｘ膜２は、反応性の高い微細領域Ｐ
と反応性の低い微細領域Ｑとによって第２層のＳｎ−５
７ｗｔ％Ｂｉ膜３と接している。この微細領域Ｑの存在
によって、成膜時の反応が抑制されていると考えられ
る。This is because Sn-57 wt% Bi metal is a eutectic metal and has a low melting point of about 139 ° C. The crystal in the region P has a square structure, and the crystal in the region Q
Has a rhombohedral structure. Therefore, in the case of the present embodiment, the GeSx film 2 of the first layer is a fine region P having high reactivity.
And Sn-5 of the second layer by the fine region Q having low reactivity.
It is in contact with the 7 wt% Bi film 3. It is considered that the reaction at the time of film formation is suppressed by the presence of the fine region Q.
【００２２】また、Ｓｎ−５７ｗｔ％Ｂｉ金属は融点が
約１３９℃と低いため、成膜時に上記両領域を微細に混
ざり合わせて第２層全体に均一分布させることが可能で
ある。融点が高すぎると、成膜時に十分な相分離を起こ
させることが非常に難しくなり、第２層は、ほぼ単一の
組成または相のみで形成されることになり、微細領域Ｑ
の機能が発現しないと考えられ、好ましくない。Further, since the melting point of Sn-57 wt% Bi metal is as low as about 139 ° C., it is possible to finely mix the two regions during film formation and to uniformly distribute the entire region over the second layer. If the melting point is too high, it is extremely difficult to cause sufficient phase separation during film formation, and the second layer is formed of almost only a single composition or phase, and the fine region Q
Is considered not to exhibit the function, which is not preferable.
【００２３】また、本実施形態の光ディスク１００の記
録パワーは、比較例に比べて、反射率が高くなることに
よって光吸収利率が減少したにも関わらず、小さい。こ
の理由として、主に、第２層の物質（Ｓｎ−５７ｗｔ％
Ｂｉ）の融点が低くなったことによると考えられる。Ｓ
ｎの融点は約２３２℃、Ｓｎ−５７ｗｔ％Ｂｉの融点は
上記のように約１３９℃である。ただし、融点が単に低
いだけでは、比較例と同程度の変調度を得ることはでき
ない。本実施形態の場合、光ディスク１００に記録レー
ザ光が入射すると、Ｓｎ−５７ｗｔ％Ｂｉは融けてほぼ
融液となり、ＳｎとＢｉとが十分に混ざり合う。これに
より、反応性の高いＳｎがＧｅＳｘと直接反応すること
が可能となると同時に、Ｓｎが融液となっていることか
ら、ＳｎとＧｅＳｘとの反応が固相どうしの反応よりも
反応性の高い液相と固相の反応となることから、高い変
調度を得ることができる。Further, the recording power of the optical disc 100 of the present embodiment is smaller than that of the comparative example, though the light absorption rate is reduced due to the higher reflectance. The main reason for this is that the substance of the second layer (Sn-57 wt%
It is considered that the melting point of Bi) was lowered. S
The melting point of n is about 232 ° C., and the melting point of Sn-57 wt% Bi is about 139 ° C. as described above. However, simply having a low melting point cannot provide the same degree of modulation as the comparative example. In the case of the present embodiment, when the recording laser beam is incident on the optical disc 100, Sn-57wt% Bi melts and becomes almost a melt, and Sn and Bi are sufficiently mixed. Thereby, highly reactive Sn can directly react with GeSx, and at the same time, since Sn is a melt, the reaction between Sn and GeSx is more reactive than the reaction between solid phases. Since the reaction takes place between a liquid phase and a solid phase, a high degree of modulation can be obtained.
【００２４】また、本実施形態の光ディスク１００のＣ
／Ｎは、比較例に比べて大きい。これは、本実施形態の
ノイズレベルが低いことによる。本実施形態の光ディス
ク１００のノイズレベルは約−５８ｄＢｍ、比較例の光
ディスク１００のノイズレベルは約−５１ｄＢｍであっ
た。この相違の原因は以下のように考えられる。比較例
の様に、第２層にＳｎを用いた場合、融点が低いことか
ら、成膜時に基板表面で再結晶化する。さらに、単純金
属であるため、この結晶性粒子は成膜中に粒成長し、最
終的な粒子サイズは、光ディスクの再生に利用されるレ
ーザ光の波長程度、数１０〜数１００ｎｍ程度まで大き
くなる。これにより、光ディスクの再生時に集光される
レーザ光の一部は散乱され、白色ノイズの原因となって
光ディスクのノイズレベルを上昇させることとなり、結
果的にはＣ／Ｎの特性劣化の原因となる。The C of the optical disc 100 of the present embodiment is
/ N is larger than that of the comparative example. This is because the noise level of the present embodiment is low. The noise level of the optical disc 100 of the present embodiment was about -58 dBm, and the noise level of the optical disc 100 of the comparative example was about -51 dBm. The cause of this difference is considered as follows. When Sn is used for the second layer as in the comparative example, since the melting point is low, recrystallization occurs on the substrate surface during film formation. Furthermore, since it is a simple metal, the crystalline particles grow during the film formation, and the final particle size increases to about the wavelength of laser light used for reproducing an optical disk, ie, about several tens to several hundreds of nm. . As a result, a part of the laser beam condensed during reproduction of the optical disk is scattered, causing white noise and increasing the noise level of the optical disk. As a result, C / N characteristics are degraded. Become.
【００２５】これに対し、本実施形態の様に、第２層に
Ｓｎ−５７ｗｔ％Ｂｉを用いた場合、前記の如く、第２
層は微細領域Ｐと微細領域Ｑとを少なくとも含む２つ以
上の異なる相から構成されることになる。これにより、
Ｓｎよりも融点の低いＳｎ−５７ｗｔ％Ｂｉの場合も、
成膜時に基板表面で再結晶化するが、共晶性の金属であ
ることから、その粒子の粒成長はある程度までに抑制さ
れ、結果的に、粒子の成長よりも粒子数の増加によって
層が形成される。On the other hand, when Sn-57 wt% Bi is used for the second layer as in the present embodiment, the second layer is formed as described above.
The layer will be composed of two or more different phases including at least the fine region P and the fine region Q. This allows
In the case of Sn-57 wt% Bi having a lower melting point than Sn,
Although it recrystallizes on the substrate surface during film formation, since it is a eutectic metal, the grain growth of the grains is suppressed to a certain extent, and as a result, the layer increases due to the increase in the number of grains rather than the grain growth. It is formed.
【００２６】これにより、本実施形態においては、光デ
ィスク１００の再生時に集光されるレーザ光の散乱は比
較例よりも格段に軽減され、光ディスク１００のノイズ
レベルが下がり、結果的にＣ／Ｎの特性劣化が抑制さ
れ、優れた特性を有することとなる。以上のように、様
々な効果により、本実施形態の光ディスク１００は、従
来の光ディスクに比べて、反射率、記録パワー、Ｃ／
Ｎ、変調度の特性バランスが優れているといえる。As a result, in the present embodiment, the scattering of the laser light condensed during reproduction of the optical disk 100 is significantly reduced as compared with the comparative example, and the noise level of the optical disk 100 is reduced, and as a result, the C / N ratio is reduced. Deterioration of characteristics is suppressed, and excellent characteristics are obtained. As described above, due to various effects, the optical disc 100 of the present embodiment has a higher reflectivity, recording power, C / C than the conventional optical disc.
It can be said that the characteristic balance between N and the degree of modulation is excellent.
【００２７】また、上記耐環境試験における本実施形態
と比較例との相違も、上述した成膜時と同様に、第２層
における反応障壁となる微細領域Ｑの反応抑制作用によ
るものと考えられ、本実施形態は、使用時における記録
特性を劣化させるような両膜２、３の反応を抑制すると
いう点でも優れているといえる。 （第２実施形態）本第２実施形態に係る光ディスク２０
０の一部断面構成を図３に示す。光ディスク２００は、
上記図１に示す光ディスク１００において、記録用レー
ザ光の照射時には第１層と第２層との反応を可能にし、
記録用レーザ光の非照射時には前記両層の反応を抑制す
る第３層を、第１層と第２層との間に設けた記録膜構成
としたものである。本実施形態においても、上記第１実
施形態と同様の作用効果を奏するが、以下、主として上
記第１実施形態と異なる部分について述べ、同一部分に
は、図中、同一符号を付して説明を省略する。The difference between the present embodiment and the comparative example in the above-mentioned environmental resistance test is considered to be due to the effect of suppressing the reaction of the minute region Q serving as a reaction barrier in the second layer, as in the above-described film formation. The present embodiment is also excellent in that the reaction between the two films 2 and 3 that degrades the recording characteristics during use is suppressed. (Second Embodiment) Optical disc 20 according to the second embodiment
FIG. The optical disc 200
In the optical disc 100 shown in FIG. 1, a reaction between the first layer and the second layer is enabled when the recording laser beam is irradiated,
The third layer, which suppresses the reaction between the two layers when the recording laser light is not irradiated, has a recording film structure provided between the first layer and the second layer. In the present embodiment, the same operation and effect as those of the first embodiment can be obtained. However, hereinafter, mainly different portions from the first embodiment will be described, and the same portions will be denoted by the same reference numerals in the drawings. Omitted.
【００２８】本実施形態では、第１層として（第１の物
質）として上記第１実施形態のＧｅＳｘ膜２と同様のＧ
ｅＳｘ（１＜ｘ≦２）膜１２、第２層（第２の物質）と
してＳｎ−３．２ｗｔ％Ａｇ−２ｗｔ％Ｂｉ膜１３、第
１及び第２層間に介在する第３層としてＺｎＳ膜１６を
用い、これら各膜により記録膜２０が構成されている。In the present embodiment, as the first layer (first substance), a G layer similar to the GeSx film 2 of the first embodiment is used.
eSx (1 <x ≦ 2) film 12, Sn-3.2 wt% Ag-2 wt% Bi film 13 as a second layer (second material), ZnS film as a third layer interposed between the first and second layers 16, the recording film 20 is formed by these films.
【００２９】ここで、Ｓｎ−３．２ｗｔ％Ａｇ−２ｗｔ
％Ｂｉ膜１３は共晶性の金属であり、上記第１実施形態
と同様に各微細領域Ｐ、Ｑが形成されるため、成膜時及
び使用時において、記録特性を劣化させるような両膜１
２、１３の反応を抑制することができる。本実施形態の
一製造方法を具体例により説明する。上記第１実施形態
の製造方法と同様にして、ＲＦマグネトロンスパッタ法
により、基板１の他方面１ｂ上にＧｅＳｘ膜１２を１４
４ｎｍ成膜した。Here, Sn-3.2 wt% Ag-2 wt
The% Bi film 13 is a eutectic metal, and the fine regions P and Q are formed in the same manner as in the first embodiment. Therefore, both films which deteriorate the recording characteristics during film formation and use are used. 1
Reactions 2 and 13 can be suppressed. One manufacturing method of the present embodiment will be described with a specific example. The GeSx film 12 is formed on the other surface 1b of the substrate 1 by RF magnetron sputtering in the same manner as in the manufacturing method of the first embodiment.
4 nm was formed.
【００３０】引き続き、ＲＦマグネトロンスパッタ法に
より、ＺｎＳ膜１６を、スパッタガス種：Ａｒ、スパッ
タガス圧：４×１０-3Ｔｏｒｒ、投入電力：３０〜１０
０Ｗの成膜条件にて、ＺｎＳターゲットを用いて２ｎｍ
成膜した。次に、ＤＣスパッタ法により、Ｓｎ−３．２
ｗｔ％Ａｇ−２ｗｔ％Ｂｉ膜１３を、スパッタガス種：
Ａｒ、スパッタガス圧：４×１０-3Ｔｏｒｒ、投入電
力：５０〜３００Ｗの成膜条件により、Ｓｎ−３．２ｗ
ｔ％Ａｇ−２ｗｔ％Ｂｉターゲットを用いて、５０ｎｍ
成膜した。最後に、上記第１実施形態と同様に、紫外線
硬化樹脂を用いて、樹脂膜４を形成し、光ディスク２０
０を作製した。Subsequently, the ZnS film 16 was formed by RF magnetron sputtering using a sputtering gas of Ar, a sputtering gas pressure of 4 × 10 −3 Torr, and a power of 30 to 10 μm.
Under a film forming condition of 0 W, 2 nm using a ZnS target
A film was formed. Next, Sn-3.2 is performed by DC sputtering.
wt% Ag-2 wt% Bi film 13 is formed by sputtering gas:
Under the film forming conditions of Ar, sputtering gas pressure: 4 × 10 −3 Torr, and input power: 50 to 300 W, Sn-3.2 w
50% using a t% Ag-2wt% Bi target
A film was formed. Lastly, similarly to the first embodiment, the resin film 4 is formed using an ultraviolet curable resin, and the optical disc 20 is formed.
0 was produced.
【００３１】本実施形態に係る光ディスク２００の記録
作用は、次のようである。案内溝１ｃ部分において、矢
印Ａから入射（照射）される記録用レーザ光は、Ｓｎ−
３．２ｗｔ％Ａｇ−２ｗｔ％Ｂｉ膜１３面に集光され、
ＺｎＳ膜１６を通して、または／かつ、ＺｎＳ膜１６を
破壊して、ＧｅＳｘ膜１２とＳｎ−３．２ｗｔ％Ａｇ−
２ｗｔ％Ｂｉ膜１３とが化学反応する。そのため、反射
部分の光学特性（反射率等）が変化し、情報を記録する
ことができる。The recording operation of the optical disc 200 according to the present embodiment is as follows. In the guide groove 1c, the recording laser light incident (irradiated) from the arrow A is Sn-
3.2 wt% Ag-2 wt% Bi film is condensed on the 13 surface,
Through the ZnS film 16 and / or by breaking the ZnS film 16, the GeSx film 12 and Sn-3.2 wt% Ag-
A chemical reaction occurs with the 2 wt% Bi film 13. For this reason, the optical characteristics (reflectance and the like) of the reflection portion change, and information can be recorded.
【００３２】また、記録用レーザ光の非照射時には、第
３層が第１層と第２層との間に介在することによって、
反応の抑制効果を更に向上させることができることか
ら、記録特性の劣化をより効率的に防止することができ
る。なお、ＧｅＳｘ膜１２とＳｎ−３．２ｗｔ％Ａｇ−
２ｗｔ％Ｂｉ膜１３との反応においては、硫化物（Ｓｎ
Ｓ、ＳｎＳ2 ）等が形成されると考えられる。When the recording laser beam is not irradiated, the third layer is interposed between the first layer and the second layer.
Since the effect of suppressing the reaction can be further improved, the deterioration of the recording characteristics can be more efficiently prevented. The GeSx film 12 and Sn-3.2 wt% Ag-
In the reaction with the 2 wt% Bi film 13, sulfide (Sn
S, SnS 2 ) and the like are considered to be formed.
【００３３】上記製造方法にて製造された光ディスク２
００に、鏡面（一方面１ａ）側から、波長：７８０ｎｍ
のレーザ光（記録用レーザ光）を、ＮＡ（開口数）：
０．５の対物レンズを通して、Ｓｎ−３．２ｗｔ％Ａｇ
−２ｗｔ％Ｂｉ膜１３面上に集光し、記録を行った。こ
のときの照射条件は、線速度：２．８ｍ／ｓｅｃ、記録
周波数：４００ｋＨｚ、記録レーザ波形：デューティー
比５０％の矩形波、とした。The optical disk 2 manufactured by the above manufacturing method
00, from the mirror surface (one surface 1a) side, wavelength: 780 nm
Laser light (recording laser light) with NA (numerical aperture):
Through a 0.5 objective lens, Sn-3.2 wt% Ag
The light was condensed on the surface of the −2 wt% Bi film 13 and recorded. The irradiation conditions at this time were a linear velocity: 2.8 m / sec, a recording frequency: 400 kHz, a recording laser waveform: a rectangular wave having a duty ratio of 50%.
【００３４】このときの光ディスク２００の特性（記録
特性）は、図２に示す様に、未記録部反射率：６３％、
記録レーザパワー：７ｍＷ、Ｃ／Ｎ：５１ｄＢ、変調
度：８５％であり、上記第１実施形態とほぼ同様に、優
れた記録特性が得られた。また、光ディスク２００につ
いて、６５℃、９６時間の耐環境試験を行なったとこ
ろ、記録したデータが再生可能であった。At this time, the characteristics (recording characteristics) of the optical disk 200 are as shown in FIG.
The recording laser power was 7 mW, the C / N was 51 dB, and the modulation was 85%. As in the first embodiment, excellent recording characteristics were obtained. When the optical disc 200 was subjected to an environment resistance test at 65 ° C. for 96 hours, the recorded data could be reproduced.
【００３５】このように、本実施形態の光ディスク２０
０も、上記比較例に比べて、特に反射率が格段に高く、
且つ、反射率、記録パワー、Ｃ／Ｎ、変調度の特性バラ
ンスが優れている。 （他の実施形態）その他、第１層を構成する物質として
は、Ｇｅ−Ｚｎ−Ｓ化合物、Ｇｅ−Ｓ−Ｏ化合物等のＳ
を構成要素とする物質、Ａｇ−Ｇａ−Ｓｅ化合物等のＳ
ｅを構成要素とする物質が挙げられ、第２層を構成する
物質としては、上記以外の組成のＳｎ−Ｂｉ合金やＳｎ
−Ａｇ合金の他に、Ｓｎ−Ａｕ合金、Ｇａ−Ｍｇ合金、
Ｓｎ−Ｓｉ化合物等が挙げられるが、光ディスクの構成
形態において、これらの中から適宜選択し組み合わせた
構成としても、上記各実施形態と同様の効果が得られ
る。As described above, the optical disk 20 of the present embodiment
0 also has a particularly high reflectance compared to the comparative example,
In addition, the characteristic balance of reflectance, recording power, C / N, and modulation is excellent. (Other Embodiments) In addition, as a material constituting the first layer, a material such as a Ge—Zn—S compound or a Ge—S—O compound may be used.
, Such as Ag-Ga-Se compounds
e as a constituent element, and as a substance forming the second layer, a Sn—Bi alloy or Sn
-Ag alloy, Sn-Au alloy, Ga-Mg alloy,
An Sn-Si compound or the like may be used. In the configuration of the optical disc, the same effects as those of the above embodiments can be obtained by appropriately selecting and combining these.
【００３６】また、第２層において反応性の高い領域と
低い領域を混在させるには、上述のように結晶構造が相
違しなくとも、組成が異なるだけであっても実現可能で
ある。また、本発明を適用する記憶部材は、上記光ディ
スクに限定されるものではなく、その他の形態であって
もよい。また、光学特性を変化させるための反応を誘起
する外部エネルギーはレーザ光に限定されるものではな
く、光全般、熱、電磁波、音波、放射線、衝撃力、歪み
等であってもよい。例えば、所定温度で第１の物質と第
２の物質とが反応して光学特性を変化させ情報を記録す
るサーモラベル等に本発明を適用することもできる。In the second layer, a high-reactivity region and a low-reactivity region can be mixed, as described above, even if the crystal structure is not different and the composition is different. Further, the storage member to which the present invention is applied is not limited to the above-described optical disk, and may be in other forms. The external energy that induces a reaction for changing the optical characteristics is not limited to laser light, but may be general light, heat, electromagnetic waves, sound waves, radiation, impact force, distortion, and the like. For example, the present invention can be applied to a thermolabel or the like in which a first substance and a second substance react at a predetermined temperature to change optical characteristics and record information.
【００３７】何れにしても、少なくとも第１の物質と第
２の物質からなり、外部エネルギーを前記両物質の少な
くとも一方の物質に付与することによって光学特性を変
化させて情報を記録する記憶部材であって、第１の物質
が、ＳおよびＳｅのうち少なくとも１つの元素を構成要
素とする物質であり、第２の物質が、該物質中に２つ以
上の組成部分または２つ以上の結晶状態の異なる相が存
在する物質で構成されていれば、記憶部材の形態は、上
記実施形態に限るものではない。In any case, the storage member is composed of at least a first substance and a second substance, and records information by changing optical characteristics by applying external energy to at least one of the two substances. The first substance is a substance containing at least one element of S and Se as a constituent element, and the second substance is composed of two or more composition parts or two or more crystal states in the substance. The shape of the memory member is not limited to the above embodiment as long as the memory member is made of a substance having different phases.
【００３８】また、例えば、上記第２実施形態の如く、
前記第１の物質と前記第２の物質との間に、記録レーザ
の非照射時に光学特性変化を抑制する効果を有する第３
の物質を介在させることは、記憶部材の更なる耐環境性
向上のためには、有効な構成となる。For example, as in the second embodiment,
A third material having an effect of suppressing a change in optical characteristics between the first material and the second material when the recording laser is not irradiated.
Interposing the above-mentioned substance is an effective configuration for further improving the environmental resistance of the storage member.
【図１】本発明の第１実施形態に係る光ディスクの断面
構成を示す説明図である。FIG. 1 is an explanatory diagram illustrating a cross-sectional configuration of an optical disc according to a first embodiment of the present invention.
【図２】本発明の実施形態及び比較例の光ディスクの記
録特性を示す図表である。FIG. 2 is a table showing recording characteristics of optical disks according to the embodiment of the present invention and a comparative example.
【図３】本発明の第２実施形態に係る光ディスクの断面
構成を示す説明図である。FIG. 3 is an explanatory diagram illustrating a cross-sectional configuration of an optical disc according to a second embodiment of the present invention.
２、１２…ＧｅＳｘ膜、３…Ｓｎ−５７ｗｔ％Ｂｉ膜、
１３…Ｓｎ−３．２ｗｔ％Ａｇ−２ｗｔ％Ｂｉ膜。2, 12 ... GeSx film, 3 ... Sn-57 wt% Bi film,
13: Sn-3.2 wt% Ag-2 wt% Bi film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 竹田 康彦 愛知県愛知郡長久手町大字長湫字横道41番 地の１ 株式会社豊田中央研究所内 (72)発明者 武市 晃洋 愛知県愛知郡長久手町大字長湫字横道41番 地の１ 株式会社豊田中央研究所内 (72)発明者 元廣 友美 愛知県愛知郡長久手町大字長湫字横道41番 地の１ 株式会社豊田中央研究所内 Ｆターム(参考） 5D029 JA01 JB03 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yasuhiko Takeda 41-cho, Chukumi Yokomichi, Nagakute-cho, Aichi-gun, Aichi Prefecture Inside Toyota Central R & D Laboratories Co., Ltd. (72) Inventor Akihiro Takeichi Nagakute-cho, Nagakute-cho, Aichi County, Aichi Prefecture No. 41, Yokomichi, Toyota Central Research Laboratory Co., Ltd. (72) Inventor Tomomi Motohiro, No. 41, Chuchu Yokomichi, Nagakute-cho, Aichi-gun, Aichi Prefecture F-term in Toyota Central Research Laboratory Co., Ltd. 5D029 JA01 JB03
Claims (1)
２の物質（３、１３）とからなり、これら両物質（２、
３、１２、１３）の少なくとも一方の物質に外部エネル
ギーを付与し反応させることにより、光学特性を変化さ
せて情報を記録する記憶部材であって、 前記第１の物質（２、１２）が、ＳおよびＳｅのうち少
なくとも１つの元素を構成要素とする物質であり、前記
第２の物質（３、１３）が、該物質中に２つ以上の組成
部分または２つ以上の結晶状態の異なる相が存在する物
質であることを特徴とする記憶部材。2. The method according to claim 1, wherein the first and second substances are composed of at least a first substance and a second substance.
A storage member for recording information by changing optical properties by applying external energy to at least one of the substances (3, 12, 13) to cause a reaction, wherein the first substance (2, 12) is: A substance containing at least one element of S and Se as a constituent element, wherein the second substance (3, 13) contains two or more composition parts or two or more phases having different crystal states in the substance. A memory member, characterized in that the substance is present.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10265020A JP2000099988A (en) | 1998-09-18 | 1998-09-18 | Memory member |
| US09/285,757 US6210860B1 (en) | 1998-04-09 | 1999-04-05 | Recording medium |
| TW088105430A TW432380B (en) | 1998-04-09 | 1999-04-06 | Recording medium |
| DE19916051A DE19916051C2 (en) | 1998-04-09 | 1999-04-09 | Recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10265020A JP2000099988A (en) | 1998-09-18 | 1998-09-18 | Memory member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000099988A true JP2000099988A (en) | 2000-04-07 |
Family
ID=17411473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10265020A Pending JP2000099988A (en) | 1998-04-09 | 1998-09-18 | Memory member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000099988A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003025924A1 (en) * | 2001-09-13 | 2003-03-27 | Tdk Corporation | Optical recording medium |
-
1998
- 1998-09-18 JP JP10265020A patent/JP2000099988A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003025924A1 (en) * | 2001-09-13 | 2003-03-27 | Tdk Corporation | Optical recording medium |
| US7236440B2 (en) | 2001-09-13 | 2007-06-26 | Tdk Corporation | Optical recording medium |
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