JP2000082921A - Yig oscillator and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a variable tuning YIG(yttrium iron garnet) oscillator and its production which never substantially cause mechanical variance of a resonance circuit. SOLUTION: An amplifier element 2, an electrode, circuit patterns 6, 6' and 6", etc., of the oscillation circuit part of a YIG oscillator are monolithically integrated on the surface of a semiconductor substrate 40 by a monolithic integrated circuit manufacturing technique. A coupling loop 3 is formed on the said substrate 40 as a thick film conductor having a shape surrounding at least a part of the outer circumference of a YIG crystal ball 1. Then a hole 47 is formed at an inside prescribed position of the loop 3 to decide the position of the ball 1 from the surface of the substrate 40, and the ball 1 is fit and fixed into the hole 47.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a YIG (yttrium iron garnet) oscillator used for, for example, microwave oscillation and a method of manufacturing the same, and more particularly, to a wide-band tunable YIG using a YIG crystal as a resonator. The present invention relates to an oscillator and a method for manufacturing the same.

[0002]

2. Description of the Related Art FIG. 6 shows an example of the structure of a conventional tunable YIG oscillator using a YIG crystal (YIG device) as a resonator. FIG. 6 is an enlarged view of a tunable YIG oscillator, in particular, a resonance circuit portion. In this YIG oscillator, a predetermined circuit pattern (metal layer) 6 to be a wiring of an oscillation circuit is formed. A circuit board 4,
A YIG crystal body (hereinafter, referred to as a YIG crystal sphere) 1 in this example, which is a component separate from the circuit board 4 and is disposed at a predetermined position on the circuit board 4, And the amplifying element 2 which is a separate component from the circuit board 4 disposed at the position shown in FIG.

[0003] A support rod 11 is fixed to the YIG crystal sphere 1, and an installation position of the YIG crystal sphere 1 on the circuit board 4 is determined by the support rod 11. In this example, 3
The three terminals of the amplifying element 2 serving as terminals are electrically connected to three circuit patterns 6 formed around the amplifying element 2 by wire bonding. That is, they are electrically connected through the bonding wires 5.

A substantially semi-circular coupling loop (YIG crystal sphere 1) is arranged at a predetermined distance around YIG crystal sphere 1.
A conductor wiring 3 for electrically and magnetically coupling the circuit and the electric circuit is disposed. Both ends of the coupling group 3 are respectively connected to a circuit pattern 6 formed around the YIG crystal sphere 1 by, for example, soldering. It is electrically connected by attachment. Through this coupling group 3, YIG
Crystal sphere 1 is electromagnetically coupled to the wiring of an oscillation circuit including amplifying element 2. In other words, coupling group 3 and YI
The G crystal sphere 1 is magnetically coupled to the coupling group 3
Is electrically coupled to the wiring of the oscillation circuit. Therefore, the coupling loop 3 functions as a conductor for magnetic resonance and electrical connection.

[0005] Since the tunable YIG oscillator oscillates a frequency signal in a microwave region having a very high frequency, a parasitic component in the resonance circuit greatly affects oscillation characteristics. Conventional tunable YIG having the above configuration
The oscillator includes (1) a YIG crystal sphere 1 fixed to a support rod 11 as a support member, (2) an amplifying element 2 arranged at a predetermined position on a circuit board 4, and a circuit pattern 6 which is a wiring of an oscillation circuit. (3) The semi-circular coupling loop 3 is arranged at a predetermined position on the circuit board 4, and both ends thereof are electrically connected to the circuit pattern 6. After the support rod 11 is arranged in the coupling group 3 with the support rod 11 and the position is adjusted, the support rod 11 is fixed to the circuit board 4 and the YIG crystal sphere 1 is fixed, and the assembly and wiring work is performed to perform resonance. Make up the circuit.

[0006]

As described above, the coupling group 3 and the amplifying element 2, which are separate components, are positioned on the circuit board 4 and are electrically connected to the circuit pattern 6 by soldering and wire bonding. Inevitably, mechanical variations occur in the manufacturing process at the connection position of the bonding wire 5, the connection position of the coupling group 3, the relative position between the YIG crystal sphere 1 and the coupling group 3, and the like. Was that.

In particular, the connection position of the coupling loop 3;
The relative position between the YIG crystal sphere 1 and the coupling ring 3 has a large mechanical variation as compared with the connection position of the bonding wire 5. This mechanical variation causes a variation in a parasitic component in the resonance circuit.
This parasitic component has a greater effect on the oscillation characteristics of the oscillator as the oscillation frequency of the oscillator increases. In particular, in an oscillator such as a YIG oscillator that oscillates a frequency in a microwave region, the oscillation characteristics of the oscillator greatly change due to a small variation in a parasitic component. Therefore, even if there is little mechanical variation in manufacturing, the effect on the oscillation characteristics of the YIG oscillator becomes very large, and the YIG oscillator having the conventional configuration has a drawback that the manufacturing yield is considerably low.

It is an object of the present invention to provide a method of manufacturing a tunable YIG oscillator in which a mechanical variation of a resonance circuit does not substantially occur. Another object of the present invention is to provide a method of manufacturing a YIG oscillator that can increase the yield of manufacturing a YIG oscillator.
Still another object of the present invention is to provide a tunable YIG oscillator in which the mechanical variation of the resonance circuit does not substantially occur.

Still another object of the present invention is to provide a tunable Y type that requires almost no assembling and wiring work of a resonance circuit.
An IG oscillator is provided.

[0010]

In order to achieve the above object, according to a first aspect of the present invention, a coupling loop formed of a thick-film conductor is formed on a substrate on which a predetermined circuit pattern is formed. Forming a hole for positioning a YIG crystal sphere on the substrate from a surface of the substrate at a predetermined position inside the coupling loop; and fitting the YIG crystal sphere into the hole. And a method for manufacturing a YIG oscillator including:

In a first preferred embodiment, the substrate is a semiconductor substrate, and the manufacturing method includes the steps of: providing a monolithic integrated circuit manufacturing technique on a surface of the semiconductor substrate;
Monolithically integrating the active element, the passive element, the circuit pattern, and the coupling loop of the oscillation circuit portion of the YIG oscillator. The circuit pattern is formed as a predetermined pattern on a semiconductor substrate on which the active element and the passive element are integrated by photoetching technology,
After forming the circuit pattern, the coupling loop is formed on the semiconductor substrate as a thick-film conductor having a shape surrounding at least a part of the outer periphery of the YIG crystal sphere.

The coupling loop is formed as a thick-film conductor by electrolytic plating on a circuit pattern formed on the semiconductor substrate. The hole is formed on the semiconductor substrate on which the active element, the passive element, the circuit pattern, and the coupling loop are monolithically integrated by an etching technique from the front surface side.

[0013] The method may further include the step of polishing the back surface of the semiconductor substrate to reduce the thickness of the semiconductor substrate. In a second preferred embodiment, the substrate is a dielectric substrate, and the manufacturing method includes the steps of mounting an active element and a passive element of an oscillation circuit portion of a YIG oscillator on a surface of the dielectric substrate. Forming the circuit pattern as a predetermined pattern on the dielectric substrate on which the active element and the passive element are mounted, and forming the coupling loop into a predetermined shape.

The circuit pattern is formed as a predetermined pattern on a dielectric substrate on which the active element and the passive element are mounted by a photo-etching technique. The coupling loop forms the circuit pattern and then forms the YIG.
The conductor is formed on the semiconductor substrate as a thick-film conductor having a shape surrounding at least a part of the outer periphery of the crystal sphere. The coupling loop is formed as a thick conductor by electrolytic plating on a circuit pattern formed on the dielectric substrate.

The hole is formed on the dielectric substrate on which the active element, the passive element, the circuit pattern, and the coupling loop are integrated as a hybrid integrated circuit from an upper surface thereof by an etching technique. The method may further include a step of polishing the back surface of the dielectric substrate to reduce the thickness of the dielectric substrate.

In each of the above embodiments, the hole is YI
Before the step of fitting the G crystal sphere, a step of heating the periphery of the substrate to maintain a predetermined temperature may be included. According to a second aspect of the present invention, a substrate on which an active element, a passive element, a circuit pattern, and a coupling group constituting an oscillation circuit portion of a YIG oscillator are integrated, and at a predetermined position inside the coupling group, There is provided a YIG oscillator including a hole for positioning a YIG crystal sphere formed on the substrate from the surface of the substrate, and a YIG crystal sphere fitted in the hole.

In the first preferred embodiment, the substrate is a semiconductor substrate, and the active element and the passive element of the oscillation circuit portion of the YIG oscillator are formed on the surface of the semiconductor substrate by a monolithic integrated circuit manufacturing technique. pattern,
And the above coupling groups are monolithically integrated. The circuit pattern is formed as a predetermined pattern on a semiconductor substrate on which the active element and the passive element are integrated by a photo-etching technique, and the coupling loop has a thickness surrounding at least a part of an outer periphery of the YIG crystal sphere. The film is formed on the semiconductor substrate as a conductor.

The coupling loop is formed as a thick-film conductor by electrolytic plating on a circuit pattern formed on the semiconductor substrate. The hole is formed on the semiconductor substrate on which the active element, the passive element, the circuit pattern, and the coupling loop are monolithically integrated by an etching technique from the surface side.

In a preferred second embodiment, the substrate is a dielectric substrate, and the surface of the dielectric substrate is YI
The active element and the passive element of the oscillation circuit portion of the G oscillator are mounted, and the circuit pattern is formed as a predetermined pattern on the dielectric substrate on which the active element and the passive element are mounted. It is formed in a shape.

The circuit pattern is formed as a predetermined pattern on a dielectric substrate on which the active element and the passive element are mounted by a photo-etching technique, and the coupling loop forms at least a part of an outer periphery of the YIG crystal sphere. It is formed on this dielectric substrate as a thick film conductor surrounding the shape. The coupling loop is formed as a thick conductor by electrolytic plating on a circuit pattern formed on the dielectric substrate.

The hole is formed on the dielectric substrate on which the active element, the passive element, the circuit pattern, and the coupling loop are integrated as a hybrid integrated circuit from the surface side by an etching technique. The YIG oscillator having the above configuration can be used for a spectrum analyzer or a network analyzer, and the analysis accuracy thereof can be further improved.

[0022]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. In FIG. 1, elements corresponding to the elements and members shown in FIG. 6 are denoted by the same reference numerals, and description thereof will be omitted unless necessary. In one embodiment of the present invention, a monolithic microwave integrated circuit (MMIC) is used.
rowaveIntegrated Circuits) manufacturing technology,
The resonance circuit portion of the tunable YIG oscillator is
A monolithic integrated circuit (hereinafter, referred to as a monolithic IC) is integrally manufactured except for a crystal sphere, to constitute a tunable YIG oscillator in which no mechanical variation in manufacturing substantially occurs.

A monolithic microwave integrated circuit (hereinafter referred to as
By applying the manufacturing technology of MMIC), semiconductor elements having high mechanical accuracy and reproducibility can be obtained by converting the main elements constituting the tunable YIG oscillator, the amplifying element, the coupling loop, and the circuit board among the members into a tunable YIG oscillator. Can be made monolithically by the manufacturing process of
A hole for positioning the G crystal sphere can be formed at the same time.

FIG. 1 is a schematic perspective view showing a structure of a resonance circuit portion of an embodiment of a YIG oscillator according to the present invention. The YIG oscillator includes a circuit board 40 on which predetermined circuit patterns 6, 6 'and 6 "to be used as wiring of an oscillation circuit are formed, and a spherical board arranged in a predetermined position on the circuit board 40 in this embodiment. (Hereinafter referred to as YIG crystal sphere) 1, a semicircular coupling loop 3 disposed near the periphery of the crystal sphere 1, and an amplifier similarly disposed at a predetermined position on the circuit board 40. Element 2.

In this embodiment, the YIG crystal sphere 1 of the elements and members constituting the resonance circuit portion shown in FIG.
All other elements and components except for the monolithic I
It is manufactured as C. For this reason, the circuit board 40
Is formed of one kind of semiconductor crystal substrate such as GaAs or Si, for example, and the amplifying element 2 is electrically connected to the adjacent circuit patterns 6, 6 'and 6 "on the circuit board 40 by a semiconductor manufacturing technique. The coupling loop 3 is also formed on the circuit board 40 by a semiconductor manufacturing technique so as to be electrically connected to the adjacent circuit patterns 6 and 6 '. A semi-spherical hole 47 for positioning 1 is formed, and YIG crystal sphere 1 is fitted in hole 47 and is in a fixed state.

Next, a method of manufacturing the YIG oscillator having the above-described configuration according to the present invention will be described with reference to FIGS. FIG. 2 is a schematic sectional view for explaining a process of forming the amplifying element 2 and the electrode 21 of the YIG oscillator shown in FIG. 1 on the circuit board 40. The circuit board 4 including these elements is sequentially formed on the circuit board 40 by a manufacturing process.
0 shows a state where the entire surface of the substrate is covered with an interlayer insulating film 41 made of, for example, silicon nitride SiN.

Next, in order to form the coupling loop 3 on the circuit board 40, as can be understood from FIG. 3A, a first photoresist layer is formed on the entire surface of the interlayer insulating film 41 shown in FIG. Then, a predetermined pattern is exposed, and the photoresist layer 42 in the unexposed portion is removed together with the interlayer insulating film 41 therebelow by, for example, dry etching. As a result, a portion on the circuit board 40 forming the coupling loop 3 and a considerable portion of the electrode 21 on the amplification element 2 are exposed. In the illustrated example, both end portions of the interlayer insulating film 41 remain together with the photoresist layer 42 thereon, but actually remain as a predetermined pattern.

Next, as shown in FIG. 3B, a thin film of a metal (for example, TiAu) for a circuit pattern serving as an oscillation circuit wiring is formed on the entire surface of the circuit board 40 in the state of FIG. The conductive layer 43 is deposited, for example, by sputtering. The entire surface of the thin-film conductive layer 43 is covered with FIG.
As can be understood from FIG. 2, a second photoresist layer 44 is applied, and then a predetermined pattern is exposed, for example, the unexposed portion of the second photoresist layer 44 together with the underlying thin film conductive layer 43 is, for example, It is removed by dry etching. As a result, the thin film conductive layer 43 is exposed except for both ends in the illustrated example. Although the two ends of the thin film conductive layer 43 remain in the figure, when the circuit board 40 is viewed from the surface, the portions shown as the circuit patterns 6, 6 'and 6 "in FIG. The lower semicircular portion of group 3 remains without being removed.

As shown in FIG. 3D, a conductor layer 45 made of a thick film of a good conductive metal is formed on the exposed surface of the thin film conductive layer 43 by electrolytic plating. In this example, the thick conductive layer 45 is formed by thickly applying gold to the exposed surface of the conductive layer 43 by electrolytic plating. Next, as shown in FIG. 3E, the first photoresist layer 42, the thin film conductive layer 43 and the second photoresist layer 44 on the interlayer insulating film 41 at both ends of the circuit board 40 are lifted off (photoresist layer Is removed by a method of removing the thin film conductive layer 43 on the upper portion by melting and removing the thin film conductive layer 43 in this example).

By the process shown in FIG. 3, the coupling loop 3 shown in FIG.
It is understood that wirings 6, 6 'and 6 "having a predetermined pattern are formed integrally on circuit board 40. Coupling group 3 is formed of YIG crystal sphere 1
Therefore, it is necessary to make the thickness of the conductor as large as possible. Therefore, the thick conductive layer 45 was formed as described above by employing the electrolytic plating process. In the illustrated example, the thick film conductor layer 45 is formed up to the upper part of the electrode 21 above the amplifying element 2, but as shown in FIG. Needless to say, only the film conductor layer 45 may be formed. Also, in FIG. 1, since the amplifying element 2 has three terminals and the shape is substantially rectangular, circuit patterns 6, 6 ′ and 6 ″ are formed on three sides around the amplifying element 2, and the three terminals are Each is connected to these circuit patterns, but this is only an example,
It goes without saying that various connection forms are adopted according to the shape of the amplifying element 2 and the number of terminals.

A high frequency circuit such as an MMIC is mounted on the circuit board 4.
Since the design is made in consideration of the dielectric constant of 0, the back surface of the circuit board 40 is usually polished to reduce the thickness of the board to 100 to 15
The thickness is reduced to about 0 μm. FIG. 4 shows a YIG oscillator according to the present invention in which the circuit board 40 is thinned by a polishing process. The polishing process of the back surface of the substrate may be performed before the process of forming the coupling loop 3 and the circuit pattern shown in FIG. 3 or may be performed when the process shown in FIG. 3 is completed.

As described above, the coupling group 3
After the formation of the circuit patterns 6, 6 'and 6 ", a positioning hole 47 into which the YIG crystal sphere 1 is fitted is formed from the front side of the circuit board 40. Conventionally, when manufacturing an MMIC, A process in which a via hole is formed on the back surface of the semiconductor substrate by etching and a plating process is performed on the inner peripheral surface of the via hole is adopted. In the present invention, the via hole etching process is directly applied to the surface of the circuit board 40. A hole 47 for positioning the YIG crystal sphere 1 by application is formed.

FIG. 5 is a schematic cross-sectional view of FIG. 3E taken along line 5-5 and viewed in the direction of the arrow. Lin Group 3)
As can be understood from FIG. 5A, the entire surface of the circuit board 40 on which the circuit patterns 6, 6 'and 6 "are formed,
The photoresist layer 46 is applied, and then a predetermined pattern is exposed, and for example, a portion of the photoresist layer that is not exposed is removed by, for example, a dry etching process. As a result, the photoresist layer 46 in the portion where the hole 47 for positioning the YIG crystal sphere is formed on the surface of the circuit board 40 is removed.

Next, the surface of the circuit board 40 in the state shown in FIG. 5A is subjected to, for example, dry etching, so that the interlayer insulating film 41 where the photoresist layer 46 does not exist and the circuit board 40 therebelow. Then, as shown in FIG. 5B, a hole 47 (in this example, a through hole) for positioning the YIG crystal sphere is formed. Next, the photoresist layer 46 is peeled and removed. Thus, it can be understood that the positioning hole 47 into which the YIG crystal sphere 1 is fitted and fixed can be formed at a predetermined position on the circuit board 40 with high accuracy and high reproducibility. Needless to say, this hole 47 has an inner peripheral surface that matches the outer shape of the YIG crystal sphere 1.

As described above, according to this embodiment, the amplifying element among the main elements and members constituting the tunable YIG oscillator utilizing the MMIC manufacturing technology having high mechanical accuracy and reproducibility. 2 and the coupling loop 3 are integrated on a semiconductor circuit board 40 as a monolithic IC, and a hole 47 for positioning the YIG crystal sphere 1 on the circuit board is formed. The amplifying element 2 and the coupling loop 3 can be formed at predetermined positions on the circuit board 40, and the holes 47 for positioning the YIG crystal sphere 1 can be formed on the circuit board 40 with high accuracy. Also, YI
The G crystal sphere 1 is fitted and fixed in a positioning hole 47 formed on the circuit board 40 with high accuracy.

As a result, according to this embodiment, the operator grips the support rod 11 attached to the YIG crystal sphere 1, places the YIG crystal sphere 1 inside the coupling group 3, and fine-tunes the position. Since it is not necessary to manually adjust the magnetic coupling state, the positioning of the YIG crystal sphere 1 becomes extremely easy, and the workability is significantly improved. Further, since the coupling lube 3 is formed as a circuit pattern on the circuit board 40, the positioning accuracy thereof is very high as compared with the conventional example, and can be reproduced with high accuracy. Further, the YIG crystal sphere 1 is fitted and fixed in the positioning hole 47 formed by etching,
The positioning accuracy of the G crystal sphere 1 with respect to the coupling lube 3 is significantly higher than that of the conventional example. In addition, since the amplifying element 2 and the coupling group 3 are arranged at predetermined positions on the circuit board 40 as separate components and do not need to be electrically connected, a bonding operation or a soldering operation is not required. No wires are required. Therefore, there is no manufacturing variation due to the bonding wire.

As already mentioned, the coupling group 3
Connection position of YIG crystal ball 1 and coupling ring 3
Since the mechanical variation in the relative position between and is the largest cause of dispersion of the parasitic components of the oscillation circuit,
As in this embodiment, the coupling loop 3 is a circuit board 4
When the YIG crystal sphere 1 is formed as a circuit pattern on the substrate 0 and the position of the YIG crystal sphere 1 with respect to the coupling loop 3 is determined by the positioning hole 47 formed with high precision by etching, the manufacturing variation of the YIG oscillator is extremely small. Since it becomes smaller, the variation of the parasitic component is almost eliminated, and the oscillation characteristics of the manufactured YIG oscillator are made uniform. In addition, in this embodiment, since there is no manufacturing variation caused by the bonding wire, there is obtained an advantage that the manufacturing yield of the YIG oscillator is significantly increased.

In the above embodiment, the positioning hole 47 of the YIG crystal sphere 1 is a through hole.
Hole 4 for positioning depending on the shape and size of crystal sphere 1
7 may be a blind hole that does not penetrate the circuit board 40. Further, the shape of the YIG crystal sphere 1 is not always spherical, and therefore, the positioning holes 4
7 is also changed according to the shape of the YIG crystal sphere 1.
Similarly, the shape of the coupling loop 3 formed on the circuit board 40 is a shape surrounding a half of the outer periphery of the YIG crystal sphere 1 at a predetermined interval (a shape substantially similar to the outer periphery of the YIG crystal sphere 1). ) Is changed according to the shape of the YIG crystal sphere 1.

Further, since the characteristics and shape of the YIG crystal sphere may change due to temperature changes, when the YIG crystal sphere is fitted and fixed in the positioning hole 47, the YIG crystal sphere is placed on the back surface of the circuit board 40 or in the vicinity thereof. It is preferable to arrange a heating means such as an electric heater to keep the ambient temperature constant.
In the above embodiment, the resonance circuit portion of the tunable YIG oscillator is manufactured integrally as a monolithic integrated circuit except for the YIG crystal sphere 1 by utilizing the MMIC manufacturing technology, and the mechanical variation in the manufacturing is reduced. Although a tunable YIG oscillator that does not substantially occur is configured, a hybrid microwave integrated circuit (HMIC) is used.
Even if the resonance circuit portion of the tunable YIG oscillator is manufactured integrally as a hybrid integrated circuit except for the YIG crystal sphere 1 by using the manufacturing technique of t), mechanical variations in manufacturing are substantially reduced. It is possible to configure a tunable YIG oscillator that does not naturally occur.

In this case, a dielectric substrate such as alumina is used as the circuit board 40, a predetermined circuit pattern is formed on the circuit board by a semiconductor manufacturing technique, and the amplifying element 2 is mounted on the circuit board. Attach in the upper predetermined position. The coupling loop 3 is formed on a circuit board by a semiconductor manufacturing technique so as to be electrically connected to an adjacent circuit pattern. Further, a hole for positioning the YIG crystal sphere 1 is formed on the circuit board by, for example, an etching technique, and the YIG crystal sphere 1 is fitted and fixed in the hole. Therefore, except that the amplifying element is not integrated on the circuit board, a tunable YIG oscillator can be manufactured by the same manufacturing method as in the above embodiment.

Also in this embodiment, the operator grips the support rod 11 attached to the YIG crystal sphere 1 and arranges the YIG crystal sphere 1 inside the coupling group 3 and finely adjusts the position to magnetically couple. Since there is no need to manually adjust the state, the positioning of the YIG crystal sphere 1 becomes extremely easy, and workability is significantly improved. Further, since the coupling lube 3 is formed as a circuit pattern on the circuit board and the position of the YIG crystal sphere 1 with respect to the coupling loop 3 is determined by a positioning hole formed with high precision by etching, the YIG oscillator Of the present invention is extremely small, and the dispersion of parasitic components is almost eliminated. Therefore, the oscillation characteristics of the manufactured YIG oscillator are made uniform, and the advantage that the production yield of the YIG oscillator is significantly increased is obtained.

Although the present invention has been described with reference to preferred embodiments, it will be understood that various modifications, alterations, and modifications may be made to the embodiments described above without departing from the spirit and scope of the invention.
It will be apparent to those skilled in the art that changes and modifications can be made. Accordingly, the invention is not limited to the illustrated embodiments, but encompasses all such variations, modifications, and improvements that fall within the scope of the invention as defined by the appended claims.

[0043]

As is apparent from the above description, according to the present invention, the variation in the manufacturing of the tunable YIG oscillator is extremely small, and the variation in the parasitic component of the oscillation circuit is almost eliminated. The oscillation characteristics of the tunable YIG oscillator are made uniform. Therefore, there is an advantage that the production yield of the YIG oscillator is significantly increased. Also,
Since the operator holds the support member attached to the YIG crystal and arranges the YIG crystal inside the coupling loop and finely adjusts the position to manually adjust the magnetic coupling state, the YIG crystal is not required. The positioning of the body becomes extremely easy, and the workability is significantly improved. Further, when the tunable YIG oscillator according to the present invention is used for a spectrum analyzer, a network analyzer, or the like, the performance of these devices (apparatuses) is further improved, so that there is an advantage that the analysis accuracy is improved.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing a structure of a resonance circuit portion of an embodiment of a YIG oscillator according to the present invention.

FIG. 2 is a schematic cross-sectional view showing a state where active elements and passive elements of the YIG oscillator shown in FIG. 1 are formed on a circuit board.

3A and 3B are diagrams for explaining a process of forming a circuit pattern and a coupling loop of a YIG oscillator shown in FIG. 1 on a circuit board in the order of steps, and FIG. 3A is a diagram illustrating a first-layer photoresist coating and a pattern; FIG. 2B is a schematic cross-sectional view for explaining a process of forming a metal thin film for a circuit pattern, and FIG. 2C is a schematic cross-sectional view for explaining a process of forming a metal thin film for a circuit pattern. FIG. 4D is a schematic cross-sectional view for explaining a step of forming a coupling loop, and FIG. 7E is a schematic cross-sectional view for explaining a lift-off step. It is sectional drawing.

FIG. 4 is a schematic sectional view showing a state where the back surface of the circuit board of the YIG oscillator shown in FIG. 1 is polished to make the circuit board thinner.

FIG. 5 is a view for explaining a process of forming a hole for fixing a YIG crystal of the YIG oscillator shown in FIG. 1, and FIG. 5A is a view for explaining a photoresist coating and pattern forming step; FIG. 2B is a schematic sectional view for explaining an etching process and a photoresist stripping step.

FIG. 6 is a schematic perspective view showing a structure of a resonance circuit portion of an example of a conventional tunable YIG oscillator.

[Explanation of symbols]

 1: YIG crystal 2: amplification element 3: coupling loop 5: bonding wire 6, 6 ', 6 ": circuit pattern 11: support rod 21: electrode 40: circuit board 41: interlayer insulating film 42: first layer photoresist Layer 43: Thin film conductive layer 44: Second photoresist layer 45: Thick conductor layer 46: Third photoresist layer 47: Positioning hole

Claims (27)

[Claims] 1. A step of forming a coupling group made of a thick-film conductor on a substrate on which a predetermined circuit pattern is formed, and at a predetermined position inside the coupling group,
A method for manufacturing a YIG oscillator, comprising: forming a hole for positioning a YIG crystal in the substrate from the surface of the substrate; and fitting the YIG crystal in the hole. 2. The method according to claim 1, wherein the substrate is a semiconductor substrate, and the active element and the passive element of the oscillation circuit portion of the YIG oscillator and the circuit pattern are monolithically integrated on the surface of the semiconductor substrate by a monolithic integrated circuit manufacturing technique. The method according to claim 1, comprising: 3. The circuit pattern is formed as a predetermined pattern on a semiconductor substrate on which the active element and the passive element are integrated by a photo-etching technique, and the coupling loop forms the circuit pattern and then forms the YI.
3. The manufacturing method according to claim 2, wherein a thick-film conductor having a shape surrounding at least a part of the outer periphery of the G crystal is formed on the semiconductor substrate. 4. The method according to claim 3, wherein the coupling loop is formed as a thick-film conductor by electrolytic plating on a circuit pattern formed on the semiconductor substrate. 5. The semiconductor device according to claim 1, wherein the active element, the passive element, the circuit pattern, and the coupling group are formed monolithically on the semiconductor substrate by an etching technique. The production method according to claim 2. 6. The method according to claim 2, further comprising the step of polishing the back surface of the semiconductor substrate to reduce the thickness of the semiconductor substrate. 7. The method according to claim 1, wherein the substrate is a dielectric substrate, and the active and passive elements of the oscillation circuit portion of the YIG oscillator are mounted on the surface of the dielectric substrate, and the active and passive elements are mounted. Forming the circuit pattern as a predetermined pattern on a dielectric substrate. 8. The circuit pattern is formed as a predetermined pattern on a dielectric substrate on which the active element and the passive element are mounted by a photo-etching technique, and the coupling loop forms the circuit pattern after forming the circuit pattern. YI
8. The manufacturing method according to claim 7, wherein the G crystal is formed on the dielectric substrate as a thick film conductor having a shape surrounding at least a part of an outer periphery of the G crystal. 9. The method according to claim 8, wherein the coupling loop is formed as a thick-film conductor by electrolytic plating on a circuit pattern formed on the dielectric substrate. 10. The hole is formed on the dielectric substrate on which the active element, the passive element, the circuit pattern, and the coupling loop are integrated as a hybrid integrated circuit by an etching technique from a front surface side thereof. The method according to claim 7, wherein: 11. The manufacturing method according to claim 7, further comprising a step of polishing the back surface of said dielectric substrate to reduce the thickness of said dielectric substrate. 12. The method according to claim 1, further comprising, before the step of fitting the YIG crystal into the hole, the step of heating the periphery of the substrate to maintain the substrate at a predetermined temperature. . 13. A substrate on which an active element, a passive element, a circuit pattern, and a coupling group constituting an oscillation circuit portion of the YIG oscillator are integrated, and at a predetermined position inside the coupling group,
A YIG oscillator comprising: a hole for positioning a YIG crystal formed on a substrate from a surface of the substrate; and a YIG crystal fitted into the hole. 14. The substrate is a semiconductor substrate. An active element, a passive element, the circuit pattern, and the coupling loop of an oscillation circuit portion of a YIG oscillator are formed on a surface of the semiconductor substrate by a monolithic integrated circuit manufacturing technique. 14. The YIG oscillator according to claim 13, wherein the YIG is monolithically integrated. 15. The circuit pattern is formed as a predetermined pattern on a semiconductor substrate on which the active element and the passive element are integrated by a photo-etching technique, and the coupling loop is formed in at least a part of an outer periphery of the YIG crystal. The YIG oscillator according to claim 14, wherein the YIG oscillator is formed on the semiconductor substrate as a thick-film conductor having a shape surrounding the YIG. 16. The YIG oscillator according to claim 15, wherein the coupling loop is formed as a thick-film conductor by electrolytic plating on a circuit pattern formed on the semiconductor substrate. 17. The semiconductor device according to claim 17, wherein the hole is formed on a surface of the semiconductor substrate on which the active element, the passive element, the circuit pattern, and the coupling loop are monolithically integrated by an etching technique. The YIG oscillator according to claim 14, wherein 18. The substrate is a dielectric substrate, and an active element and a passive element of an oscillation circuit portion of a YIG oscillator are mounted on a surface of the dielectric substrate, and the dielectric element on which the active element and the passive element are mounted. 14. The YIG oscillator according to claim 13, wherein the circuit pattern is formed as a predetermined pattern on a substrate, and the coupling loop is formed in a predetermined shape. 19. The circuit pattern is formed as a predetermined pattern on a dielectric substrate on which the active element and the passive element are mounted by a photoetching technique, and the coupling loop is formed at least around an outer periphery of the YIG crystal. 19. The YIG oscillator according to claim 18, wherein the YIG oscillator is formed on the dielectric substrate as a thick-film conductor surrounding a part thereof. 20. The YIG oscillator according to claim 19, wherein the coupling loop is formed as a thick-film conductor by electrolytic plating on a circuit pattern formed on the dielectric substrate. . 21. The hole is formed on the dielectric substrate on which the active element, the passive element, the circuit pattern, and the coupling loop are integrated as a hybrid integrated circuit by an etching technique from the front surface side. The YIG oscillator according to claim 18, wherein: 22. A spectrum analyzer comprising the YIG oscillator according to claim 13. 23. A spectrum analyzer comprising the YIG oscillator according to claim 14. 24. A spectrum analyzer comprising the YIG oscillator according to claim 18. 25. A network analyzer comprising the YIG oscillator according to claim 13. 26. A network analyzer comprising the YIG oscillator according to claim 14. 27. A network analyzer comprising the YIG oscillator according to claim 18.