JP2000082803A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent hydrogen atoms from penetrating through a gate oxide film by a method wherein a hydrogen block layer is provided to a peripheral circuit and a logic circuit respectively, a photoresist layer is selectively left on a memory section, and the hydrogen block layer formed on the peripheral circuit and the logic circuit is removed by etching. SOLUTION: The surface of a polycrystalline silicon film provided to a capacity storage electrode forming region of a memory cell section and a peripheral circuit/logic circuit region is masked, and a capacitance storage cell 15 and hydrogen block layer 17 are formed. After a photoresist layer is removed, a silicon nitride film is deposited on the surface of the capacity storage cell, and the surface of the nitride film is oxidized for the formation of a capacity insulating film 16. A photoresist 22 is selectively left so as to cover a memory cell, the capacity insulating film 16 of the peripheral circuit/logic circuit is removed using the photoresist 22 as a mask, and the hydrogen block layer 17 is removed by etching. By this setup, a semiconductor device is prevented from deteriorating in threshold voltage due to the generation and downward diffusion of hydrogen.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device suitable for use in a DRAM having a stacked capacitor and a PN gate structure or a DRAM having a logic circuit.

[0002]

2. Description of the Related Art FIG.
1 shows a configuration of a semiconductor memory device as a logic embedded DRAM having an N gate structure.

In FIG. 7, a semiconductor memory device comprises a memory cell portion, a peripheral circuit portion and a logic circuit portion, and includes a p-type silicon substrate 1, an N well region 2, a P well region 3, and an n well region.
^- type diffusion layer 4, p ⁺ -type diffusion layer 5, a field oxide film 6,
n ⁺ gate electrode 7, p ⁺ gate electrode 8, gate oxide film 9, bit line contact 10, node contact 11,
It comprises a bit line 12, a first interlayer insulating film 13, a second interlayer insulating film 14, a capacitor storage electrode 15, a capacitor insulating film 16, and the like.

After forming the capacitance storage electrode 15 of the stack capacitor, a CVD nitride film is deposited as a capacitance insulating film 16,
Thereafter, the surface of the nitride film is oxidized by thermal oxidation in a steam atmosphere to form an oxynitride film. Thereafter, a capacitor upper electrode is formed on the nitride film, and then a contact hole and an aluminum wiring are formed to complete a semiconductor memory device.

[0005]

In the process of forming a capacitive insulating film of a DRAM having a stacked capacitor and a PN gate structure or a DRAM mixed with a logic, a silicon nitride film is formed by a vapor phase growth (LPCVD) method. In addition, because of exposure to a hydrogen atmosphere at a high temperature of 700 ° C., boron (B) doped in the p ⁺ gate electrode 8 of the PMOS transistor portion diffuses abnormally and penetrates through the gate oxide film 9, thereby causing the PMOS transistor portion to pass through. There is a problem that the threshold voltage (VT) of the transistor is reduced.

[0006] The reason that the above problem occurs is that LPC
When a silicon nitride film is formed by the VD method, 3Si ₃
As represented by the reaction formula of H ₄ + 4NH ₃ → Si ₃ N ₄ + 12H _2, a large amount of hydrogen is generated simultaneously with the formation of the nitride film.

The diffusion coefficient of boron in an oxide film in a hydrogen atmosphere is N ₂ (100%) in an N ₂ / H ₂ (10%) atmosphere.
%) One to two digits larger than the atmosphere. Therefore, in the PMOS transistor using the p ⁺ gate, boron in the gate passes through the gate oxide film and reaches the substrate surface. For reference, YOSI SHACHAM-DIAMOND e
t al. J. Electronic Materiais vol. 15 NO. 4P. 229
There is 1986.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and has as its object to prevent hydrogen generated during a step of forming a capacitive insulating film from penetrating a gate oxide film.

[0009]

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention comprises:
Having a memory cell part, a peripheral circuit part, and a logic circuit part,
A method of manufacturing a semiconductor device having a stack capacitor and a transistor having a p ⁺ gate structure, wherein a hydrogen block layer made of the same conductive film as a capacitance storage electrode or a bit line is formed in a peripheral circuit portion and a logic circuit portion; ,
The photoresist is selectively left only in the memory cell part,
Etching the hydrogen block layer formed in the peripheral portion and the logic circuit portion using the photoresist film as a mask.

Further, the hydrogen block layer may be formed of a polycrystalline silicon film or a high melting point metal film, and the hydrogen block layer may be removed at the same time as the etching of the capacitor upper electrode. Further, a step of forming a contact hole and subsequently forming a metal wiring may be provided.

Further, the hydrogen block layer may be formed of a high melting point metal film, and the high melting point metal film may be removed at the same time as etching the contact hole connecting the metal wiring and the lower conductive layer. Further, a DRAM may be formed in the memory cell portion.

[0012]

Embodiments of the present invention will be described below with reference to the drawings. Embodiments of the present invention, stacked capacitor and dual gate ^- in the step of forming a (p n gate) of the DRAM or logic embedded DRAM having a capacitor structure of a capacitor insulating film, vapor deposition (LPC
When forming the silicon nitride film by the VD) method, 700
An object of the present invention is to solve the problem that boron (B) in the p ⁺ gate electrode of the PMOS transistor portion is abnormally diffused and exposed to the gate oxide film due to exposure to a high-temperature hydrogen atmosphere at a temperature of not less than ° C.

In order to solve the above problem, in the embodiment of the present invention, the same conductive film (polycrystalline silicon film) as the capacitor storage electrode is provided above the transistor, so that the silicon nitride film is grown. Is generated by the dangling bonds at the crystal grain boundaries of the polycrystalline silicon film to block the hydrogen reaching the p ⁺ gate electrode portion.

FIG. 1 is a sectional view showing one step in a method of manufacturing a semiconductor device according to an embodiment of the present invention.
The parts corresponding to are assigned the same numbers. In this step, a memory cell portion provided with a stacked capacitor above the transistor and a hydrogen block layer 17 made of the same conductor layer as the capacitance storage electrode 15 are provided.
It has a RAM peripheral / logic unit.

A transistor is formed in a memory cell region on p-type silicon substrate 1, and a bit line 12 is formed on first interlayer insulating film 13 covering the transistor, which is connected to n ^- type diffusion layer 4 of the transistor. ing.

On the second interlayer insulating film 14 covering the bit line 12, a capacitor storage electrode 1 made of polycrystalline silicon is provided.
5. A stacked capacitor composed of a capacitor insulating film 16 made of an oxynitride film (NO) and a capacitor upper electrode (not shown) made of an n-type polycrystalline silicon film formed on the capacitor insulating film 16 is formed. I have.

On the other hand, in the peripheral circuit section and the logic circuit section,
First and second interlayer insulating films 13 and 14 are formed on the transistor. Then, the entire peripheral circuit section / logic circuit section is covered with a hydrogen block layer 17 made of the same polycrystalline silicon film as the capacitor storage electrode 15.

Next, first to fourth embodiments of a method for manufacturing a semiconductor device having the above-described configuration will be described. First,
A first embodiment will be described with reference to FIGS. 2 (a) to 3 (e). First, as shown in FIG. 2A, a field oxide film 6 having a thickness of about 300 nm is formed on the surface of a p-type silicon substrate 1 by a known LOCOS method. Thereafter, after forming a gate oxide film 9, an n ⁺ -type and p ⁺ -type doped polysilicon film having a thickness of about 150 nm and a thickness of 100
Gate electrodes 7 and 8 made of a tungsten silicide film of about nm are formed in the memory cell section and the peripheral circuit section / logic circuit section.

Here, the n ⁺ type polycrystalline silicon film is NM
Arsenic (As) ion implantation into OS transistor formation region
(Condition example: 30 KeV, 5E15 cm ^-2 ).

On the other hand, the p ⁺ type polycrystalline silicon film
Boron (B) ion implantation (condition example: 10 KeV, 5E15 cm ^-2 ) or boron fluoride (BF ₂ ) ion implantation (condition example: 30 KeV,
5E15 cm ^-2 ).

Subsequently, using the gate electrodes 7 and 8 and the photoresist as a mask, 29 to 50 Ke are applied to the NMOS transistor regions of the memory cell portion and the peripheral circuit portion / logic circuit portion.
V, ions of phosphorus (P) or arsenic of about 1 to 3 × 10 ¹³ cm ⁻² are implanted to form an n ⁻ type diffusion layer 4. Next, a silicon oxide film serving as a sidewall spacer of the transistor is formed.

When the silicon oxide film is made of an HTO film,
An example of a method of forming the sidewall spacer is as follows. An HTO film having a thickness of about 100 nm is formed on the entire surface by a low pressure vapor phase epitaxy (LPCVD) method at about 800 ° C. using silane (SiH ₄ ) and nitrous oxide (N ₂ O) as source gases, and then the HTO film is formed. Etchback by reactive ion etching forms sidewall spacers.

Next, in order to form the source / drain diffusion layers of the transistors in the peripheral circuit section and the logic circuit section,
Boron fluoride (BF ₂ ) using arsenic for NMOS transistor
Is implanted into a PMOS transistor [FIG. 2 (a)].
].

Next, a film thickness of 100 nm is formed by a normal pressure CVD method.
Silicon oxide film, TEOS (SiOC ₂ H) 4 gas, phosphine (PH ₃ ), and trimethyl borate B (O
L using CH ₃ 3) gas and oxygen (O ₂ ) gas as source gas
After a BPSG film having a thickness of about 700 nm is formed on the entire surface by the PCVD method, furnace annealing or lamp annealing is performed at 800 to 900 ° C. in a nitrogen atmosphere, and thereafter, chemical mechanical polishing (CMP) method or reactive ion etching. The first film having a thickness of about 500 nm
Is formed.

Subsequently, the bit line contact 10 reaching the n ⁻ -type diffusion layer 4 in the memory cell portion is formed by anisotropic etching using a fluorocarbon-based etching gas (CHF ₃ , CF ₄ ). An opening is formed in the insulating film 13, and a polycrystalline silicon film doped with an n-type impurity such as phosphorus having a thickness of about 100 nm and a tungsten silicide (WSi ₂ ) film having a thickness of about 100 nm are sequentially formed on the entire surface. The bit line 12 is formed by patterning a tungsten polycide film made of [FIG. 2 (b)].

Next, a second interlayer insulating film 14 is formed on the entire surface. The second interlayer insulating film 14 is formed of a silicon oxide film having a thickness of about 100 nm by normal pressure CVD and a BPSG film having a thickness of about 300 nm by LPCVD. The surface of the second interlayer insulating film 14 is flattened, and the height from the surface of the p-type silicon substrate 1 to the surface of the second interlayer insulating film 14 is about 800 nm.

Next, by performing anisotropic etching using a photoresist as a mask, a node contact 11 of the memory cell portion reaching the n ⁻ type diffusion layer 4 is formed. Then, after removing the photoresist, a first polycrystalline silicon film doped with an n-type impurity such as phosphorus having a thickness of about 800 nm is deposited by LPCVD. A method for forming the first polycrystalline silicon film is described below.

1. LPCV at a growth temperature of about 600 to 650 ° C. using monosilane gas (SiH ₄ ) as a source gas
After depositing a polycrystalline silicon film having a thickness of about 800 nm by the method D, impurities such as phosphorus are diffused into the first polycrystalline silicon by a vapor phase diffusion method, and are converted into an n-type polycrystalline silicon film.

2. Monosilane gas and phosphine (PH
₃ ) After an n-type doped amorphous silicon film is deposited by LPCVD at a growth temperature of 480 to 580 ° C. using a gas as a source gas, furnace annealing in a nitrogen (N ₂ ) atmosphere at a temperature of about 700 to 900 ° C. Alternatively, by performing lamp annealing, the amorphous silicon film is converted into an n-type polycrystalline silicon film having a large number of crystal grains and crystal grain boundaries.

3. The polycrystalline silicon film and the amorphous silicon film formed by the LPCVD method are grown a plurality of times (2 to 10 times) to reduce the grain size and increase the crystal grain boundaries.

Next, anisotropic etching is performed by masking with a photoresist so as to cover the capacitor storage electrode forming region of the memory cell portion and the first polycrystalline silicon film surface of the peripheral circuit portion / logic circuit portion region. , Capacitance storage electrode 1
5 and a hydrogen blocking layer 17 are formed. Subsequently, after the photoresist is removed, a thermal nitride film having a thickness of about 15 ° is grown on the surface of the capacitance storage electrode by rapid thermal nitridation (RTN) at 800 to 900 ° C. in an ammonia atmosphere. A silicon nitride film (Si ₃ N ₄ ) is deposited, and further, at 800 ° C. in a steam atmosphere (H ₂ O ₂ ).
The capacitance insulating film 16 is formed by oxidizing the surface of the nitride film for about 0 minutes [FIG. 2 (c)].

Thereafter, the photoresist 22 is selectively left so as to cover the memory cell portion, and the capacitance insulating film 16 of the peripheral circuit portion / logic circuit portion is etched using the photoresist 22 as a mask. CHF
₃ , after removal by anisotropic etching using CF ₄ )
Further, the hydrogen blocking layer 17 is formed by reactive ion etching using chlorine (Cl ₂ ) and hydrogen bromide (HBr) gas.
Is removed by etching [FIG. 3 (d)].

Thereafter, the photoresist 22 is removed, and a capacitor upper electrode 18 made of an n-type second polycrystalline silicon film doped with an impurity such as phosphorus is formed. Thereafter, a third interlayer insulating film is formed by a known manufacturing method. The semiconductor device according to the present embodiment is completed by forming the insulating film 19, the contact hole 20, and the aluminum wiring 21 [FIG. 3 (e)].

According to this embodiment, during the oxidation of the silicon nitride film or the subsequent nitride film in the step of forming the capacitive insulating film, the diffusion of boron (B) in the p ⁺ gate is caused by the generation and diffusion of hydrogen. And the threshold voltage (VT) of the PMOS transistor can be prevented from lowering due to boron penetrating through the gate oxide film and reaching the silicon substrate surface.

The reason that the above effects can be obtained is that a hydrogen block layer 17 made of a polycrystalline silicon film is provided in the peripheral circuit portion,
A large amount of hydrogen generated at the time of silicon nitride film deposition or nitride film oxidation by LPCVD is terminated to dangling bonds existing at crystal grain boundaries in the polycrystalline silicon film, thereby forming a gate electrode portion of a PMOS transistor below. The amount of hydrogen reaching can be greatly reduced. This prevents boron in the p ⁺ gate electrode of the PMOS transistor portion from diffusing in the gate oxide film and reaching the substrate surface.

Next, a second embodiment will be described with reference to FIGS.
It is explained together with. Similarly to the first embodiment, DR
Capacitance storage electrode 15 in peripheral circuit part and logic circuit part of AM
A hydrogen block layer 17 made of the same conductive film as
After depositing a silicon nitride film to be the capacitance insulating film 16 by the LPCVD method, the surface of the nitride film is oxidized by thermal oxidation in a steam atmosphere to form an oxynitride film (FIG. 4A).

Next, after depositing a second polycrystalline silicon film doped with an n ⁺ -type impurity such as phosphorus, the capacitive upper electrode 18 is formed by reactive ion etching using the photoresist 22 left in the memory cell portion as a mask. Then, using the photoresist 22 as a mask, the capacitive insulating film 16 and the hydrogen block layer 17 in the peripheral circuit portion / logic circuit portion are sequentially etched and removed (FIG. 4B).

Subsequently, similarly to the first embodiment,
A third interlayer insulating film, a contact hole and an aluminum wiring are formed to complete the semiconductor device according to the present embodiment.

According to the present embodiment, the hydrogen block layer 17 made of a polycrystalline silicon film is provided in the peripheral circuit portion and the logic circuit portion, and the generated hydrogen is transferred to the dangling region existing in the crystal grain boundary in the polycrystalline silicon film. Since the bond is terminated and the polycrystalline silicon film is removed at the same time as the etching of the capacitor upper electrode 18 of the DRAM,
The effect of significantly reducing the amount of hydrogen generated during the capacitive insulating film forming step reaching the gate electrode can be obtained without adding an additional lithography step for removing the hydrogen blocking layer 17.

Next, a third embodiment will be described with reference to FIGS.
It is explained together with. In the same manner as in the first embodiment, after element isolation and transistors are formed in the memory cell portion, the peripheral circuit portion, and the logic circuit portion, the first interlayer insulating film 13 and the n ⁻ -type diffusion layer 4 in the memory cell portion are formed. A bit line contact 10 to be connected is formed.

Thereafter, for example, a film thickness of 30 to 100 n is formed on the entire surface.
An m-thick titanium (Ti) film and a 100-300 nm-thick titanium nitride (TiN) film are sequentially deposited by a sputtering method or a CVD method. Next, the bit line 12 in the memory cell portion
The bit line 12 and the same conductive film as the bit line are formed by masking with the photoresist 22 and performing anisotropic etching so as to cover the surface of the TiN / Ti laminated film of the peripheral circuit section / logic circuit section. A hydrogen blocking layer 17 is formed (FIG. 5A).

Here, a conductive film constituting the bit line 12 and the hydrogen blocking layer 17 is a polycrystalline silicon film doped with an n-type impurity such as phosphorus having a thickness of about 100 nm in addition to a TiN / Ti laminated structure film. And film thickness 100n
A structure in which tungsten (W) is further deposited on a laminated structure film of a tungsten silicide (WSi ₂ ) film of about m or a laminated structure film of TiN / Ti may be used.

Thereafter, a second interlayer insulating film 14 is formed on the entire surface. The second interlayer insulating film 14 is formed of a silicon oxide film having a thickness of about 100 nm by normal pressure CVD and a BPSG film having a thickness of about 300 nm by LPCVD. The surface of the second interlayer insulating film 14 is flattened, and the height from the surface of the p-type silicon substrate 1 to the surface of the second interlayer insulating film 14 is about 800 nm.

Next, by performing anisotropic etching using the photoresist 22 as a mask, the node contact 11 of the memory cell portion reaching the n ⁻ type diffusion layer 4 is formed. Then, after removing the photoresist 22, the film thickness 8
A first polycrystalline silicon film doped with an n-type impurity such as phosphorus of about 00 nm is deposited by LPCVD.

Next, the capacitance storage electrode 15 is formed by performing anisotropic etching using a mask with a photoresist 22 so as to cover the surface of the first polycrystalline silicon film in the region where the capacitance storage electrode is to be formed in the memory cell portion. I do. Subsequently, after the photoresist is removed, a thermal nitride film having a thickness of about 15 ° is grown on the surface of the capacitance storage electrode by rapid thermal nitridation (RTN) at 800 to 900 ° C. in an ammonia atmosphere. A capacitor insulating film 16 is formed by depositing a silicon nitride film and oxidizing the surface of the silicon nitride film in a steam atmosphere at 800 ° C. for about 30 minutes.

Thereafter, an n-type second polycrystalline silicon film is deposited by the LPCVD method, and is masked with a photoresist 22 so as to cover the surface of the second polycrystalline silicon film in a region where a capacitor upper electrode is to be formed in the memory cell portion. Then, the capacitor upper electrode 18 is formed by anisotropically etching the second polycrystalline silicon film.

Subsequently, using the photoresist 22 as a mask, the capacitive insulating film 16 and the second interlayer insulating film 14 under the second polycrystalline silicon film in the peripheral circuit portion and the logic circuit portion are formed.
Are removed by anisotropic etching using a fluorocarbon-based etching gas [FIG. 5 (b)].

Subsequently, the hydrogen block layer 17 made of the same conductor layer as the bit line 12 is removed by anisotropic etching using a chlorine-based etching gas. Thereafter, a third interlayer insulating film, a contact hole, and an aluminum wiring are formed by a known manufacturing method to complete the semiconductor device according to the present embodiment.

According to the present embodiment, the hydrogen blocking layer 17 made of the same conductive film as the bit line is provided in the peripheral circuit portion and the logic circuit portion, and the high melting point metal which is difficult to pass the hydrogen generated in the capacitor forming step is provided. Since the film is cut off by the film and the hydrogen block layer 17 is removed at the same time when the capacitor upper electrode 18 is etched, an additional lithography step for removing the hydrogen block layer 17 is not required.
Hydrogen generated during the step of forming a capacitive insulating film can be prevented from reaching the gate electrode.

Next, the fourth embodiment will be described with reference to FIGS.
It is explained together with. In the same manner as in the third embodiment, after element isolation and transistors are formed in the memory cell section and the peripheral circuit section / logic circuit section, the first interlayer insulating film 13 and the n ⁻ type diffusion layer 4 in the memory cell section are formed. After forming a bit line contact hole to be connected, the bit line and hydrogen block layer 1 are formed.
7 is formed.

Thereafter, similarly to the third embodiment,
After the formation of the second interlayer insulating film 14, the node contact 11, and the capacitance storage electrode 15, the surface of the capacitance storage electrode 15 is subjected to rapid thermal nitriding (RT) at 800 to 900 ° C. in an ammonia atmosphere.
N), a silicon nitride film having a thickness of about 60 nm is deposited on the entire surface after the growth of a thermal nitride film having a thickness of about 15 °, and the surface of the silicon nitride film is oxidized at 800 ° C. for about 30 minutes in a steam atmosphere to obtain a capacitance. An insulating film 16 is formed (FIG. 6A).

Thereafter, a capacitor upper electrode 18 and a third interlayer insulating film 19 are sequentially formed. At this stage, the hydrogen block layer 17 remains in the peripheral circuit section / logic circuit section.

Next, in order to form a contact hole for connecting an aluminum wiring formed on the third interlayer insulating film 19 to a lower source / drain diffusion layer or a gate electrode, first, a photoresist is used as a mask. After removing the third interlayer insulating film 19 and the second interlayer insulating film 14 by anisotropic etching using a fluorocarbon-based etching gas, a hydrogen block of the same conductive film as the exposed bit line is removed. The layer 17 is removed by anisotropic etching using a chlorine-based etching gas.

Subsequently, the first interlayer insulating film 13 is etched by using an etching gas to expose the surfaces of the source / drain diffusion layers and the gate electrode. After that, a silicon oxide film or a silicon nitride film is deposited by an LPCVD method or a plasma CVD (P-CVD) method in order to prevent an electrical short circuit between the aluminum wiring and the hydrogen block layer in the contact hole. Then, sidewall spacers are formed in the contact holes by etching back by reactive ion etching. Thereafter, aluminum wiring is formed by a known method to complete the semiconductor device of the present invention [FIG.
(B)].

According to the present embodiment, the hydrogen blocking layer 17 made of the same conductive film as the bit line is provided in the peripheral circuit portion and the logic circuit portion, and the high melting point metal which does not easily pass the hydrogen generated in the capacitor forming step is provided. The film is cut off by the film, and the hydrogen block layer 17 is removed at the same time as the etching of the contact hole connecting the aluminum wiring and the lower conductive layer. Therefore, an additional lithography step for removing the hydrogen block layer 17 is added. Thus, it is possible to prevent hydrogen generated during the step of forming the capacitor insulating film from reaching the gate electrode.

[0056]

As described above, according to the present invention,
In a method of manufacturing a semiconductor device having a stack capacitor and a transistor having a p ⁺ gate structure, a hydrogen block layer made of the same conductive film as a capacitor storage electrode or a bit line is formed in a peripheral circuit portion and a logic circuit portion of a memory cell. Thereafter, the photoresist is selectively left only in the memory cell formation portion, and the hydrogen blocking layer is etched away using the photoresist as a mask, so that the silicon nitride film or the subsequent nitride film in the process of forming the capacitive insulating film is formed. During oxidation, the generation and diffusion of hydrogen promotes the diffusion of boron in the p ⁺ gate, and the boron penetrates the gate oxide film to reach the silicon substrate surface, thereby causing the threshold voltage (VT) of the PMOS transistor to rise. Can be prevented from decreasing.

Further, by forming the hydrogen blocking layer with a polycrystalline silicon film, the generated hydrogen is terminated to dangling bonds existing at crystal grain boundaries in the polycrystalline silicon film, and the polycrystalline silicon film is formed on the upper portion of the capacitor. By removing at the same time as etching the electrode, the amount of hydrogen generated at the time of forming the capacitive insulating film reaches the gate electrode greatly without adding an additional lithography step for removing the hydrogen blocking layer. Can be reduced.

Also, the hydrogen block layer is formed of a high melting point metal film that does not allow the passage of hydrogen generated in the capacitor formation step, and the hydrogen block layer is used for etching the upper electrode of the capacitor or connecting the aluminum wiring to the lower conductor layer. By simultaneously removing the contact holes during etching, it is possible to prevent the hydrogen generated during the capacitive insulating film formation step from reaching the gate electrode without adding an additional lithography step for removing the hydrogen block layer. Can be prevented.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device in one step of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a step of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a continuation of the steps of the method for manufacturing a semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a step of a method for manufacturing a semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a sectional view illustrating a step of a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a sectional view illustrating a step of a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a configuration of a conventional semiconductor memory device as a logic embedded DRAM having a stacked capacitor and a PN gate structure.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 p-type silicon substrate 4 n ⁻ -type diffusion layer 7 n ⁺ gate electrode 8 p ⁺ gate electrode 9 gate oxide film 10 bit line contact 11 node contact 12 bit line 13 first interlayer insulating film 14 second interlayer insulating film 15 Capacitance storage electrode 16 Capacitive insulating film 17 Hydrogen block layer 18 Capacitance upper electrode 19 Third interlayer insulating film 20 Contact hole 21 Aluminum wiring 22 Photoresist

Claims (6)

[Claims] 1. A method of manufacturing a semiconductor device having a memory cell portion, a peripheral circuit portion, and a logic circuit portion and having a stack capacitor and a transistor having ap ⁺ gate structure, wherein the peripheral circuit portion and the logic circuit portion are Forming a hydrogen block layer made of the same conductive film as a capacitor storage electrode or a bit line; and selectively leaving a photoresist film only in the memory cell portion, and using the photoresist film as a mask to form the peripheral circuit. A step of etching and removing the hydrogen block layer formed in the portion and the logic circuit portion. 2. The manufacturing method of a semiconductor device according to claim 1, wherein said hydrogen blocking layer is formed of a polycrystalline silicon film, and said polycrystalline silicon film is removed at the same time as etching of said capacitor upper electrode. Method. 3. The manufacturing method of a semiconductor device according to claim 1, wherein said hydrogen blocking layer is formed of a high melting point metal film, and said high melting point metal film is removed simultaneously with etching of said capacitor upper electrode. Method. 4. The method according to claim 1, further comprising the step of forming a contact hole and subsequently forming a metal wiring. 5. The method according to claim 1, wherein the hydrogen blocking layer is formed of a high melting point metal film, and the high melting point metal film is simultaneously removed when etching a contact hole connecting the metal wiring and a lower conductive layer. 5. The method for manufacturing a semiconductor device according to claim 4, wherein 6. The method according to claim 1, wherein a DRAM is formed in the memory cell section.