JP2000082783A - Ferroelectric device - Google Patents
Ferroelectric deviceInfo
- Publication number
- JP2000082783A JP2000082783A JP11180753A JP18075399A JP2000082783A JP 2000082783 A JP2000082783 A JP 2000082783A JP 11180753 A JP11180753 A JP 11180753A JP 18075399 A JP18075399 A JP 18075399A JP 2000082783 A JP2000082783 A JP 2000082783A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- film
- electrode
- ferroelectric film
- preventing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 12
- 239000011574 phosphorus Substances 0.000 abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract description 6
- 238000005204 segregation Methods 0.000 abstract description 3
- 229910052783 alkali metal Inorganic materials 0.000 abstract description 2
- 150000001340 alkali metals Chemical class 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 206010021143 Hypoxia Diseases 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、強誘電体装置の構造に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a ferroelectric device.
【0002】[0002]
【従来の技術】従来、強誘電体装置は、以下の如く形成
されていた。すなわち、強誘電体膜の二つの主面に対向
する金属電極が形成されて成るのが通例であった。2. Description of the Related Art Conventionally, a ferroelectric device has been formed as follows. That is, a metal electrode opposed to two main surfaces of a ferroelectric film is usually formed.
【0003】[0003]
【発明が解決しようとする課題】しかし、上記従来技術
によると、強誘電体膜中のナトリュウム等のアルカリ・
イオン等のイオンの電界による移動や、強誘電体構成元
素である酸素やチタン等の構成元素の電界による移動に
伴う偏析や、電極と強誘電体との界面準位の異なる事等
により、強誘電体の電気的特性が一定しないと云う課題
や、寿命が短いと云う課題等、特性の安定性上の課題が
あった。However, according to the above-mentioned prior art, alkalis such as sodium in the ferroelectric film are not used.
Due to the movement of ions such as ions due to the electric field, the segregation of the ferroelectric constituent elements such as oxygen and titanium due to the movement of the constituent elements due to the electric field, and the difference in the interface state between the electrode and the ferroelectric substance, etc. There have been problems in the stability of characteristics, such as a problem that the electrical characteristics of the dielectric are not constant and a problem that the life is short.
【0004】本発明は、かかる従来技術の課題を解決す
る新しい強誘電体装置構造を提供する事を目的とする。An object of the present invention is to provide a new ferroelectric device structure which solves the above-mentioned problems of the prior art.
【0005】[0005]
【課題を解決するための手段】上記課題を解決し、上記
目的を達成するために、本発明は、強誘電体装置に関
し、(1)強誘電体膜表面に燐ガラス層を形成するか、
あるいは該燐ガラス層を形成後除去する事、(2)強誘
電体膜表面にシリコン窒化膜を形成する事、(3)強誘
電体膜表面に少なくとも一個所以上窒化チタン膜から成
る電極を形成する事、および(4)少なくとも強誘電体
膜の一主面に、2個の電極を対向して形成する事、等の
手段を取る。In order to solve the above problems and achieve the above object, the present invention relates to a ferroelectric device, which relates to (1) forming a phosphorus glass layer on the surface of a ferroelectric film;
Or (2) forming a silicon nitride film on the surface of the ferroelectric film; (3) forming an electrode comprising at least one titanium nitride film on the surface of the ferroelectric film. And (4) forming two electrodes facing each other at least on one main surface of the ferroelectric film.
【0006】[0006]
【作用】燐ガラス層は酸化物強誘電体または高誘電率体
中のアルカリ金属可動イオンを捕獲し、特性の劣化を防
止し、特性の安定化を図る作用がある。The phosphorus glass layer has a function of capturing alkali metal mobile ions in an oxide ferroelectric substance or a high dielectric constant substance, preventing deterioration of characteristics and stabilizing characteristics.
【0007】シリコン窒化膜は酸化物強誘電体または高
誘電率体中からの酸素の放出を防止し、酸素欠損による
特性の劣化を防止する作用がある。The silicon nitride film has an effect of preventing the release of oxygen from the oxide ferroelectric or the high dielectric constant, and of preventing deterioration of characteristics due to oxygen deficiency.
【0008】窒化チタン電極は酸化物強誘電体または高
誘電率体に設けられた電極下のチタンや酸素等の酸化物
強誘電体または高誘電率体の構成元素の電界印加あるい
は空間電荷制限電流による偏析を防止し、特性の安定化
を図る作用がある。The titanium nitride electrode is formed by applying an electric field or a space charge limiting current to constituent elements of an oxide ferroelectric or high dielectric substance such as titanium or oxygen below the electrode provided on the oxide ferroelectric substance or high dielectric substance. Has the effect of preventing segregation due to carbon dioxide and stabilizing characteristics.
【0009】酸化物強誘電体膜または高誘電率体膜の一
主面に対向電極を設ける事により、電極と酸化物強誘電
体膜または高誘電率体膜との間の界面準位密度を同一と
成す事ができ、極性の反転による特性の変化を防止する
作用がある。By providing a counter electrode on one principal surface of the oxide ferroelectric film or the high dielectric constant film, the interface state density between the electrode and the oxide ferroelectric film or the high dielectric constant film can be reduced. They can be made the same, and have an effect of preventing a change in characteristics due to reversal of polarity.
【0010】[0010]
【実施例】以下、実施例により本発明を詳述する。The present invention will be described below in detail with reference to examples.
【0011】図1は、本発明の一実施例を示す強誘電体
装置の要部の断面図である。すなわち、シリコン等の半
導体等から成る基板101の表面にはシリコン酸化膜あ
るいはシリコン窒化膜等から成る絶縁膜102が形成さ
れて成り、該絶縁膜102上にはチタンー白金や白金等
から成る電極103が10nm厚さ程度形成され、該電
極103上に鉛・ジルコニュウム・チタン酸化物(PZ
T)、鉛・ランタン・ジルコニュウム・チタン酸化物
(PLZT)、あるいはチタン酸バリュウム等の強誘電
体膜105か、または酸化タンタルあるいは酸化チタン
等の高誘電率酸化物膜をスパッタ蒸着等により10nm
〜300nm厚さ程度形成するに際し、あらかじめCV
D法により形成したシリコン酸化物に酸化燐を混合した
燐ガラス、または前記強誘電体膜105または高誘電率
酸化物膜を形成後燐イオンを打ち込んで強誘電体膜10
5または高誘電率酸化物膜を燐ガラス化等して4mol
%程度の燐濃度を有する燐ガラス層103を10nm厚
さ程度形成し、前記強誘電体膜105または高誘電率酸
化物膜を形成後にも前記方法と同様な方法により燐ガラ
ス層106を前記強誘電体膜105または高誘電率酸化
物膜表面に10nm厚さ程度形成後、電極チタンー白金
や白金等から成る電極107を10nm厚さ程度形成し
たものであるが、前記燐ガラス層103は形成しなくて
も良く、前記燐ガラス層106は一旦形成後可動イオン
を捕獲させた後除去しても良く、さらに燐ガラス層10
3あるいは106を強誘電体膜105の側面にまで延在
させて形成しても良く、該燐ガラス層等は燐ガラス単層
のみならず酸化チタンや酸化シリコン等との多層構造で
あってもよい。この様に、強誘電体膜または高誘電率酸
化物膜等の表面に燐ガラス層を形成すると、該燐ガラス
層は強誘電体膜または高誘電率酸化物膜中の可動イオン
を捕獲し、可動イオンによる強誘電体膜または高誘電率
酸化物膜の特性劣化を防止し、特性の安定化を図る事が
できる効果がある。図2は、本発明の他の実施例を示す
強誘電体装置の要部の断面図である。すなわち、基板2
01上に形成された絶縁膜202上に電極203を形成
後、CVD法等によりシリコン窒化膜204を10nm
〜50nm厚さ程度形成し、次いで強誘電体膜205ま
たは高誘電率酸化物膜を10nm〜300nm厚さ程度
形成し、次いでCVD法等によりシリコン窒化膜206
を10nm〜50nm厚さ程度形成し、次いで電極20
7を形成したものであるが、シリコン窒化膜203ある
いは206を強誘電体膜205の側面にまで延在させて
形成しても良く、あるいはシリコン窒化膜203あるい
は206は電極203あるいは206の強誘電体膜20
5または高誘電率酸化物膜との界面を除く表面や側面
に、あるいはこの場合には電極表面にまで延在して形成
されても良く、更に前記実施例の燐ガラス層をシリコン
窒化膜204あるいは206と強誘電体膜205または
高誘電率酸化物膜との界面に形成しても良く、該シリコ
ン窒化膜はシリコン窒化膜単層のみならずシリコン酸化
膜や酸化チタン膜との多層膜構造であっても良い。この
場合に、強誘電体膜または高誘電率酸化物膜等を酸素ア
ニールや酸素プラズマ・アニールして酸素を飽和させた
後に、その表面にシリコン窒化膜を形成すると強誘電体
膜または高誘電率酸化物膜に酸素欠損を生じる事なく、
電界印加や空間電荷制限電流が流れる事による酸素欠損
に伴う特性劣化を防止する事ができる効果がある。FIG. 1 is a sectional view of a main part of a ferroelectric device according to an embodiment of the present invention. That is, an insulating film 102 made of a silicon oxide film or a silicon nitride film is formed on a surface of a substrate 101 made of a semiconductor such as silicon, and an electrode 103 made of titanium-platinum or platinum is formed on the insulating film 102. Is formed to a thickness of about 10 nm, and lead / zirconium / titanium oxide (PZ) is formed on the electrode 103.
T), a ferroelectric film 105 such as lead / lanthanum / zirconium / titanium oxide (PLZT) or barium titanate, or a high dielectric constant oxide film such as tantalum oxide or titanium oxide having a thickness of 10 nm by sputtering deposition or the like.
When forming to a thickness of about 300 nm,
Phosphor glass in which phosphorus oxide is mixed with silicon oxide formed by the method D, or the ferroelectric film 105 or the high-dielectric-constant oxide film is formed, and phosphorus ions are implanted into the ferroelectric film 10.
5 or 4 mol of high dielectric constant oxide film by vitrifying phosphorus
% Of a phosphorus glass layer 103 having a phosphorus concentration of about 10% and a thickness of about 10 nm, and after forming the ferroelectric film 105 or the high-dielectric-constant oxide film, the phosphorus glass layer 106 is formed by the same method as described above. An electrode 107 made of titanium-platinum, platinum or the like is formed on the surface of the dielectric film 105 or the high-dielectric-constant oxide film to a thickness of about 10 nm. The phosphor glass layer 106 may be removed once it has been formed and then trapped by mobile ions.
3 or 106 may be formed so as to extend to the side surface of the ferroelectric film 105. The phosphor glass layer or the like may be not only a phosphor glass single layer but also a multilayer structure of titanium oxide, silicon oxide, or the like. Good. As described above, when a phosphorus glass layer is formed on a surface of a ferroelectric film or a high-k oxide film, the phosphorus glass layer captures mobile ions in the ferroelectric film or the high-k oxide film, This has the effect of preventing the characteristic deterioration of the ferroelectric film or the high-dielectric-constant oxide film due to mobile ions and stabilizing the characteristics. FIG. 2 is a sectional view of a main part of a ferroelectric device according to another embodiment of the present invention. That is, the substrate 2
After the electrode 203 is formed on the insulating film 202 formed on the silicon nitride film 01, the silicon nitride film 204 is
A ferroelectric film 205 or a high dielectric constant oxide film is formed to a thickness of about 10 nm to 300 nm, and then a silicon nitride film 206 is formed by a CVD method or the like.
Is formed to a thickness of about 10 nm to 50 nm, and then the electrode 20 is formed.
7, the silicon nitride film 203 or 206 may be formed to extend to the side surface of the ferroelectric film 205, or the silicon nitride film 203 or 206 may be formed of the ferroelectric film of the electrode 203 or 206. Body membrane 20
5 or the surface excluding the interface with the high-dielectric-constant oxide film, or in this case, may be formed to extend to the surface of the electrode. Alternatively, the silicon nitride film may be formed at the interface between the ferroelectric film 205 and the ferroelectric film 205 or the high dielectric constant oxide film. It may be. In this case, a ferroelectric film or a high-k oxide film is oxygen-annealed or oxygen-plasma-annealed to saturate oxygen, and then a silicon nitride film is formed on the surface to form a ferroelectric film or a high-k film. Without causing oxygen deficiency in the oxide film
This has the effect of preventing deterioration of characteristics due to oxygen deficiency due to the application of an electric field or the flow of a space charge limiting current.
【0012】図3は、本発明のその他の実施例を示す強
誘電体装置の要部の断面図である。すなわち、基板30
1上の絶縁膜302上に電極303を形成後、強誘電体
膜304または高誘電率酸化物膜を10nm〜300n
m厚さ程度形成し、窒化チタン膜305から成る電極を
CVD法やスパッタ蒸着法等により10nm〜100n
m厚さ程度形成したものであるが、該窒化チタン膜30
5上または該窒化チタン膜305下に他の金属や合金か
ら成る電極を積層して形成しても良く、また前記電極3
03も窒化チタン膜や窒化チタン膜と他の金属や合金と
の積層構造から成る電極であっても良い。更に、前記実
施例等に示した燐ガラス層やシリコン窒化膜あるいはそ
れらの積層膜を窒化チタン電極と強誘電体膜304との
界面に形成しても良い。この場合に、強誘電体膜または
高誘電率酸化物膜等を酸素アニールや酸素プラズマ・ア
ニールして酸素を飽和させた後に、その表面に窒化チタ
ン電極を形成すると強誘電体膜または高誘電率酸化物膜
に酸素欠損を生じる事なく、電界印加や空間電荷制限電
流が流れる事による酸素欠損に伴う特性劣化を防止する
事ができる効果がある。FIG. 3 is a sectional view of a main part of a ferroelectric device according to another embodiment of the present invention. That is, the substrate 30
After the formation of the electrode 303 on the insulating film 302 on the substrate 1, a ferroelectric film 304 or a high dielectric constant oxide film is
m, and an electrode composed of the titanium nitride film 305 is formed to a thickness of 10 nm to 100
m thick, but the titanium nitride film 30
5 may be formed on or under the titanium nitride film 305 by laminating electrodes made of other metals or alloys.
03 may be an electrode having a titanium nitride film or a laminated structure of a titanium nitride film and another metal or alloy. Further, the phosphorus glass layer, the silicon nitride film, or a laminated film thereof as described in the above embodiments may be formed at the interface between the titanium nitride electrode and the ferroelectric film 304. In this case, a ferroelectric film or a high dielectric constant oxide film is subjected to oxygen annealing or oxygen plasma annealing to saturate oxygen, and then a titanium nitride electrode is formed on the surface to form a ferroelectric film or high dielectric constant film. There is an effect that characteristics deterioration due to oxygen deficiency due to application of an electric field or flow of a space charge limiting current can be prevented without causing oxygen deficiency in the oxide film.
【0013】図4は、本発明の更にその他の実施例を示
す強誘電体装置の要部の断面図である。すなわち、基板
401上の絶縁膜402上に電極403を形成後、強誘
電体膜404または高誘電率酸化物膜を5nm〜300
nm厚さ程度形成し、該強誘電体膜404または高誘電
率酸化物膜の表面に対向して形成された2つの対向電極
405および406を形成したものであるが、前記電極
403は必ずしも必要ではなく、また対向電極405お
よび406は強誘電体膜404または高誘電率酸化物膜
の一主面に形成されていれば良く、すなわち対向電極4
05および406は絶縁膜402と強誘電体膜404ま
たは高誘電率酸化物膜との界面に形成されても良い。更
に、前記実施例等に示した燐ガラス層やシリコン窒化膜
あるいはそれらの積層膜や窒化チタン電極を本実施例に
適用しても良い事は云うまでもない。この様に、強誘電
体膜または高誘電率酸化物膜の一主面に対向電極を設け
ると、各電極と強誘電体膜または高誘電率酸化物膜との
界面処理が同一となり、界面準位密度も同一となり、電
極の極性を変化させても電気的特性の対称性が良好と成
り、電気的特性の安定化を図る事ができる効果がある。FIG. 4 is a sectional view of a main part of a ferroelectric device showing still another embodiment of the present invention. That is, after the electrode 403 is formed on the insulating film 402 on the substrate 401, the ferroelectric film 404 or the high dielectric constant oxide film is
In this embodiment, two opposing electrodes 405 and 406 are formed so as to have a thickness of about nm and face the surface of the ferroelectric film 404 or the high dielectric constant oxide film. Instead, the counter electrodes 405 and 406 only need to be formed on one main surface of the ferroelectric film 404 or the high dielectric constant oxide film.
05 and 406 may be formed at the interface between the insulating film 402 and the ferroelectric film 404 or the high dielectric constant oxide film. Further, it is needless to say that the phosphorus glass layer, the silicon nitride film, the laminated film thereof, or the titanium nitride electrode shown in the above embodiments may be applied to the present embodiment. As described above, when the counter electrode is provided on one main surface of the ferroelectric film or the high-k oxide film, the interface treatment between each electrode and the ferroelectric film or the high-k oxide film becomes the same, and the interface state becomes high. The potential densities are also the same, and even if the polarity of the electrodes is changed, the symmetry of the electrical characteristics is improved, and there is an effect that the electrical characteristics can be stabilized.
【0014】尚、本発明は実施例等に示した平面型強誘
電体装置のみならず、縦型強誘電体装置やダイナミック
・メモリのコンデンサー部や独立型強誘電体コンデンサ
ー等の強誘電体装置等にも適用する事ができる事は云う
までもない。It should be noted that the present invention is not limited to the planar ferroelectric devices shown in the embodiments and the like, but also to ferroelectric devices such as vertical ferroelectric devices, dynamic memory capacitor units and stand-alone ferroelectric capacitors. It is needless to say that the present invention can also be applied to the above.
【0015】[0015]
【発明の効果】本発明により、強誘電体の電気的特性が
一定し、寿命が長い、特性の安定した強誘電体装置を提
供する事ができる効果がある。According to the present invention, it is possible to provide a ferroelectric device in which the electric characteristics of the ferroelectric are constant, the life is long, and the characteristics are stable.
【図1】本発明の一実施例を示す強誘電体装置の要部の
断面図である。FIG. 1 is a sectional view of a main part of a ferroelectric device according to an embodiment of the present invention.
【図2】本発明の他の実施例を示す強誘電体装置の要部
の断面図である。FIG. 2 is a sectional view of a main part of a ferroelectric device according to another embodiment of the present invention.
【図3】本発明のその他の実施例を示す強誘電体装置の
要部の断面図である。FIG. 3 is a sectional view of a main part of a ferroelectric device showing another embodiment of the present invention.
【図4】本発明の更にその他の実施例を示す強誘電体装
置の要部の断面図である。FIG. 4 is a sectional view of a main part of a ferroelectric device showing still another embodiment of the present invention.
101、201、301、401・・・基板 102、202、302、402・・・絶縁膜 103、107、203、207、303、403・・
・電極 104、106・・・燐ガラス層 105、205、304、404・・・強誘電体膜 204、206・・・シリコン窒化膜 305・・・窒化チタン膜 405、406・・・対向電極101, 201, 301, 401 ... substrate 102, 202, 302, 402 ... insulating film 103, 107, 203, 207, 303, 403 ...
-Electrodes 104, 106: Phosphor glass layer 105, 205, 304, 404: Ferroelectric film 204, 206: Silicon nitride film 305: Titanium nitride film 405, 406: Counter electrode
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成11年7月26日(1999.7.2
6)[Submission date] July 26, 1999 (1999.7.2)
6)
【手続補正1】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】特許請求の範囲[Correction target item name] Claims
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【特許請求の範囲】[Claims]
【手続補正2】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0005[Correction target item name] 0005
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【0005】[0005]
【課題を解決するための手段】本発明は、強誘電体装置
に関し、強誘電体膜と、前記強誘電体膜の一方側に位置
する第1及び第2の電極と、前記強誘電体膜の前記一方
とは相対向する他方側に位置するとともに前記第1及び
第2の電極を含むように形成された共通電極と、を有し
てなることを特徴とする。また、上記の内容に加えて、
前記共通電極は前記強誘電体膜よりも基板側に位置して
なることを特徴とする。また、本発明における他の強誘
電体装置は、少なくとも強誘電体膜の一主面には、複数
の電極が対向して形成されてなる事を特徴とする。The present invention relates to a ferroelectric device, and relates to a ferroelectric film, first and second electrodes located on one side of the ferroelectric film, and the ferroelectric film. And a common electrode which is located on the other side facing the other and is formed so as to include the first and second electrodes. In addition to the above,
The common electrode is located closer to the substrate than the ferroelectric film. Another ferroelectric device according to the present invention is characterized in that a plurality of electrodes are formed at least on one main surface of the ferroelectric film so as to face each other.
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/8242 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (Reference) H01L 21/8242
Claims (4)
て成るか、あるいは該燐ガラス層を形成後除去して成る
事を特徴とする強誘電体装置。1. A ferroelectric device comprising a phosphor glass layer formed on the surface of a ferroelectric film, or removing the phosphor glass layer after forming it.
されて成る事を特徴とする強誘電体装置。2. A ferroelectric device comprising a silicon nitride film formed on a surface of a ferroelectric film.
窒化チタン膜から成る電極が形成されて成る事を特徴と
する強誘電体装置。3. A ferroelectric device characterized in that at least one or more electrodes made of a titanium nitride film are formed on the surface of the ferroelectric film.
の電極が対向して形成されて成る事を特徴とする強誘電
体装置。4. A ferroelectric device characterized in that at least one main surface of a ferroelectric film is formed with two electrodes facing each other.
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JP18075399A JP3599607B2 (en) | 1999-06-25 | 1999-06-25 | Dynamic memory and method of manufacturing dynamic memory |
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JP16785992A Division JPH0613545A (en) | 1992-06-25 | 1992-06-25 | Ferroelectric device |
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JP2002083732A Division JP2002359291A (en) | 2002-03-25 | 2002-03-25 | Manufacturing method for ferroelectric device, and the ferroelectric device |
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JP2000082783A true JP2000082783A (en) | 2000-03-21 |
JP3599607B2 JP3599607B2 (en) | 2004-12-08 |
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