JP2000080272A - Polymer composition having low dielectric constant - Google Patents

Polymer composition having low dielectric constant

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Publication number
JP2000080272A
JP2000080272A JP24942998A JP24942998A JP2000080272A JP 2000080272 A JP2000080272 A JP 2000080272A JP 24942998 A JP24942998 A JP 24942998A JP 24942998 A JP24942998 A JP 24942998A JP 2000080272 A JP2000080272 A JP 2000080272A
Authority
JP
Japan
Prior art keywords
mmol
carbon atoms
added
organic group
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24942998A
Other languages
Japanese (ja)
Inventor
Masao Tomikawa
真佐夫 富川
Takenori Fujiwara
健典 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP24942998A priority Critical patent/JP2000080272A/en
Publication of JP2000080272A publication Critical patent/JP2000080272A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To obtain the subject composition capable of presenting a polymer material having a low dielectric constant and excellent in heat resistance and adhering properties by bringing the composition to contain a polymer constituted of a specific organic group and a specific group. SOLUTION: This polymer composition having a low dielectric constant is brought to contain a polymer constituted of 5-35 mole % of (A) a 3-4 valent 3-30C organic group and one or more of groups selected from (B) formula I [Q1 and Q3 are each a 3-4 valent organic group having >2C; Q2 is a divalent organic group having >2C; Q4 and Q5 are each H, a monovalent organic group having 1-10C; (p) is 1-100; (q) and (r) are each 1 or 2], formula II [Q6 and Q8 are each a tetravalent organic group having >2C; Q7 is a divalent organic group having >2C; (s) is 0-100], formula III [Q9 and Q11 are each a tetravalent organic group having >2C; Q10 is a divalent organic group having >2C; (t) is 0-100], formula IV [Q12 and Q14 are each a 2-4 valent organic group having >2C; Q13 is a 3-6 valent organic group having >2C; Z is O, S or NH; (u) is 1-100; (v) and (w) are each 1 or 2], formula V [Q15 and Q17 are each a divalent and >2C organic group; Q16 is a tetravalent and >2C organic group (x) is 0-100], etc.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、誘電率が低く、接
着性の良好な耐熱性高分子材料に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat-resistant polymer material having a low dielectric constant and good adhesion.

【0002】[0002]

【従来の技術】誘電率の低い耐熱材料としてはフルオロ
アルキル樹脂、ポリオレフィン樹脂などがよく知られて
いる。しかしながら、このようなものはパターン加工が
難しい、接着性が悪い、ガラス転移温度が低いなどの問
題があり、実用に供されるに至らなかった。そこで、従
来、誘電率の低い材料としては、フッ素原子を導入した
スピンオングラス膜、プラズマCVD法で製膜されたフ
ッ素原子を導入した酸化ケイ素膜、あるいはポリイミド
のような耐熱性のある有機高分子材料が半導体分野では
使用されていた。しかしながら、このような膜の誘電率
はほとんどのものが3以上であり、今後の半導体の高速
化に際して、層間絶縁膜による電気容量が問題になるこ
とが予想されている。
2. Description of the Related Art Fluoroalkyl resins and polyolefin resins are well known as heat-resistant materials having a low dielectric constant. However, such materials have problems such as difficulty in pattern processing, poor adhesion, and low glass transition temperature, and have not been put to practical use. Conventionally, materials having a low dielectric constant include a spin-on glass film containing fluorine atoms, a silicon oxide film containing fluorine atoms formed by plasma CVD, and a heat-resistant organic polymer such as polyimide. Materials have been used in the semiconductor field. However, the dielectric constant of such a film is almost 3 or more in most cases, and it is expected that an electric capacity due to an interlayer insulating film will become a problem when the speed of a semiconductor is increased in the future.

【0003】本発明は、このような点を鑑み、誘電率が
低く維持され、さらに接着性に優れた耐熱性高分子材料
を開発すべく、鋭意検討した結果、特定の構造を有した
ポリマー骨格とすることにより低誘電率化でき、しかも
耐熱性、接着性の良好な材料を見いだした。
In view of the foregoing, the present invention has been intensively studied in order to develop a heat-resistant polymer material having a low dielectric constant and excellent adhesiveness. As a result, a polymer skeleton having a specific structure has been obtained. Thus, a material having a low dielectric constant and excellent heat resistance and adhesiveness was found.

【0004】[0004]

【発明が解決しようとする課題】本発明は、かかる問題
を解決せしめ、誘電率が低い耐熱性高分子材料を提供す
ることを目的とするものである。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and to provide a heat-resistant polymer material having a low dielectric constant.

【0005】[0005]

【課題を解決するための手段】本発明は、炭素数3から
30の3価から4価の有機基と一般式(1)から(9)
で示される基の少なくとも1種より構成されるポリマー
を含み、炭素数3から30までの3価から4価の基のポ
リマー中の含量が、5から35モル%であることを特徴
とする低誘電率重合体組成物であり、該ポリマーを (1)3から4価の架橋成分と一般式(1)から(9)
で示される基の少なくとも1種とを反応させN1を得る (2)N1と3から4価の架橋成分とを反応させ、N2
を得る (3)N2と一般式(1)から(9)で示される基の少
なくとも1種と反応させ、N3を得る (4)N3と3から4価の基を反応させ、N4を得る 以上のことを計2n+1回(nは0から100の整数)
繰り返し、逐次的に反応を行うことで得られることを特
徴とする低誘電率重合体組成物である。
According to the present invention, a trivalent to tetravalent organic group having 3 to 30 carbon atoms and a compound represented by any of the general formulas (1) to (9)
Wherein the content of the trivalent to tetravalent group having 3 to 30 carbon atoms in the polymer is 5 to 35 mol%, the polymer comprising at least one group represented by the following formula: A dielectric constant polymer composition, wherein the polymer is represented by (1) a trivalent to tetravalent crosslinking component and a compound represented by the following general formulas (1) to (9):
Is reacted with at least one of the groups represented by the formula (1) to obtain N1. (2) The N1 is reacted with a trivalent to tetravalent crosslinking component to form N2.
(3) Reaction of N2 with at least one of the groups represented by formulas (1) to (9) to obtain N3 (4) Reaction of N3 with a trivalent group from 3 to obtain N4 2n + 1 times (n is an integer from 0 to 100)
A low dielectric constant polymer composition obtained by performing a reaction repeatedly and sequentially.

【0006】[0006]

【化11】 (Q1、Q3は、少なくとも炭素原子を2個以上含む3価
から4価の有機基、Q2は少なくとも炭素原子を2個以
上含む2価の有機基、Q4、Q5は水素原子および/また
は炭素数1から10までの1価の有機基、pは1から1
00の整数、q、rは1または2を表す。)
Embedded image (Q 1 and Q 3 are trivalent to tetravalent organic groups containing at least two carbon atoms, Q 2 is a divalent organic group containing at least two carbon atoms, and Q 4 and Q 5 are hydrogen atoms And / or a monovalent organic group having 1 to 10 carbon atoms, p is 1 to 1
An integer of 00, q and r represent 1 or 2. )

【化12】 (Q6、Q8は少なくとも炭素原子を2個以上含む4価の
有機基、Q7は少なくとも炭素原子を2個以上含む2価
の有機基、sは0から100までの整数を表す。)
Embedded image (Q 6 and Q 8 are tetravalent organic groups containing at least two carbon atoms, Q 7 is a divalent organic group containing at least two carbon atoms, and s is an integer from 0 to 100.)

【化13】 (Q9、Q11は少なくとも炭素原子を2個以上含む4価
の有機基、Q10は少なくとも炭素原子を2個以上含む2
価の有機基、tは0から100までの整数を表す。)
Embedded image (Q 9 and Q 11 are tetravalent organic groups containing at least two carbon atoms, and Q 10 is a tetravalent organic group containing at least two carbon atoms.
A valent organic group, t represents an integer of 0 to 100; )

【化14】 (Q12、Q14は、少なくとも炭素原子を2個以上含む2
から4価の有機基、Q13は少なくとも炭素原子を2個以
上含む3価から6価の有機基、Zは酸素原子、硫黄原
子、またはNHより選ばれる。uは1から100の整
数、v、wは1または2を表す。)
Embedded image (Q 12 and Q 14 each have at least two carbon atoms.
To a tetravalent organic group, Q 13 is a trivalent to hexavalent organic group containing at least two carbon atoms, and Z is selected from an oxygen atom, a sulfur atom, or NH. u represents an integer of 1 to 100, and v and w represent 1 or 2. )

【化15】 (Q15、Q17は、少なくとも2個以上の炭素原子を含む
2価の有機基、Q16は、少なくとも2個以上の炭素原子
を含む4価の有機基、Zは酸素原子、硫黄原子、NHを
表しており、xは0から100までの整数を表す。)
Embedded image (Q 15 and Q 17 are a divalent organic group containing at least 2 or more carbon atoms, Q 16 is a tetravalent organic group containing at least 2 or more carbon atoms, Z is an oxygen atom, a sulfur atom, Represents NH, and x represents an integer from 0 to 100.)

【化16】 (Q19、Q21は少なくとも炭素原子を2個以上含む2価
の有機基、Q20は、少なくとも炭素原子を2個以上含む
3価から4価の有機基、Q22は水素原子および/または
炭素数1から10までの1価の有機基、yは1から10
0の整数、aは1または2を表す。)
Embedded image (Q 19 and Q 21 are divalent organic groups containing at least two carbon atoms, Q 20 is a trivalent to tetravalent organic group containing at least two carbon atoms, and Q 22 is a hydrogen atom and / or A monovalent organic group having 1 to 10 carbon atoms, y is 1 to 10
Integer of 0, a represents 1 or 2. )

【化17】 (Q23、Q25は少なくとも炭素原子を2個以上含む2価
の有機基、Q24は少なくとも炭素原子を2個以上含む4
価の有機基、bは0から100までの整数を表す。)
Embedded image (Q 23 and Q 25 are divalent organic groups containing at least two carbon atoms, and Q 24 is a divalent organic group containing at least two carbon atoms.
A valent organic group, b represents an integer from 0 to 100; )

【化18】 (Q27、Q29は少なくとも炭素原子を2個以上含む3価
から6価の有機基、Q28は、少なくとも炭素原子を2個
以上含む2価の有機基、Zは酸素原子、硫黄原子、また
はNHより選ばれる。cは1から100の整数、d、e
は1または2を表す。)
Embedded image (Q 27 and Q 29 are a trivalent to hexavalent organic group containing at least two carbon atoms, Q 28 is a divalent organic group containing at least two carbon atoms, Z is an oxygen atom, a sulfur atom, Or NH. C is an integer of 1 to 100, d, e
Represents 1 or 2. )

【化19】 (Q30、Q32、Q34は、少なくとも2個以上の炭素原子
を含む4価の有機基、Q31、Q33は、少なくとも2個以
上の炭素原子を含む2価の有機基、Zは酸素原子、硫黄
原子、NHを表しており、fは0から100までの整数
を表す。)
Embedded image (Q 30 , Q 32 , Q 34 are tetravalent organic groups containing at least 2 or more carbon atoms, Q 31 , Q 33 are divalent organic groups containing at least 2 or more carbon atoms, Z is Represents an oxygen atom, a sulfur atom, and NH, and f represents an integer from 0 to 100.)

【0007】[0007]

【発明の実施の形態】本発明において、3価から4価の
基とは、枝分かれをポリマー構造中に作るために用い
る。このような化合物としては下記一般式(11)に示
したようなものが好ましい。しかしながら、これ以外の
3価から4価の基を使用することもできる。また、基が
3価以下となると枝分かれが得られないので好ましくな
い。また、基が5価以上となるとゲル化するおそれがあ
るので好ましくない。
BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, a trivalent to tetravalent group is used to form a branch in a polymer structure. As such a compound, those shown in the following general formula (11) are preferable. However, other trivalent to tetravalent groups can also be used. Further, when the group is trivalent or less, branching is not obtained, which is not preferable. Further, if the group has a valence of 5 or more, it is not preferable because it may gel.

【0008】[0008]

【化20】 3価から4価の基は、ポリマー成分中の5モル%から3
5モル%配合されていることが好ましい。さらに好まし
くは10モル%から25モル%である。5モル%より少
ないと、得られるポリマーが線状ポリマーの性質に近づ
き、35モル%より多いと反応中にゲル化するおそれが
ある。
Embedded image The trivalent to tetravalent group accounts for 5 to 3 mol% of the polymer component.
It is preferable that 5 mol% is blended. More preferably, it is 10 mol% to 25 mol%. If the amount is less than 5 mol%, the obtained polymer approaches the properties of the linear polymer, and if it is more than 35 mol%, gelation may occur during the reaction.

【0009】本発明において、上記した架橋基と反応さ
せる基としては、一般式(1)から(9)に挙げたもの
を好ましく使用することができる。
In the present invention, as the group to be reacted with the above-mentioned crosslinking group, those listed in the general formulas (1) to (9) can be preferably used.

【0010】一般式(1)においてQ1、Q3は炭素数2
以上の3価または4価の有機基を表している。このよう
なものとしては、ベンゾフェノンテトラカルボン酸、
4,4’−(ヘキサフルオロイソプロピリデン)ジフタ
ル酸、ジフェニルエーテルテトラカルボン酸、ジフェニ
ルスルホンテトラカルボン酸残基などの4価の芳香族含
有基やトリメシン酸のような3価の芳香族含有基が好ま
しい例として挙げることができる。さらに好ましくは、
結合軸のずれが30度以内である、ピロメリット酸、
3,3’,4,4’−ビフェニルテトラカルボン酸残基
などの4価の基、トリメリット酸残基などの3価の基を
挙げることができる。
In the general formula (1), Q 1 and Q 3 each have 2 carbon atoms.
It represents the above trivalent or tetravalent organic group. Such things as benzophenonetetracarboxylic acid,
Tetravalent aromatic-containing groups such as 4,4 '-(hexafluoroisopropylidene) diphthalic acid, diphenylethertetracarboxylic acid, and diphenylsulfonetetracarboxylic acid residues, and trivalent aromatic-containing groups such as trimesic acid are preferred. Examples can be given. More preferably,
Pyromellitic acid having a bond axis deviation within 30 degrees,
Examples thereof include a tetravalent group such as a 3,3 ′, 4,4′-biphenyltetracarboxylic acid residue and a trivalent group such as a trimellitic acid residue.

【0011】Q2は2価の炭素数2以上の2価の有機基
を表している。好ましいものの例としては、4,4’−
ジアミノジフェニルエーテル、アミノフェノキシベンゼ
ン、ビス(4−アミノフェノキシフェニル)プロパン、
ビス(4−アミノフェノキシフェニル)スルホン残基な
どの芳香族ジアミン残基が好ましい。さらに好ましいも
のとしては、結合軸のずれが30度以内の剛直な構造を
有しているパラフェニレンジアミン、2,2’−ビス
(トリフルオロメチル)−4,4’−ジアミノビフェニ
ル、4,4’−ジアミノターフェニル、3,3’−ジメ
トキシベンチジン残基などを挙げることができる。ま
た、Q1、Q3成分の1から30モル%を脂肪族ジアミン
残基であるエチレンジアミン、シクロヘキシルジアミン
残基、あるいはシロキサン含有ジアミン残基である1,
3−ビス(3−アミノプロピル)テトラメチルジシロキ
サン残基などを配合することもできる。
Q 2 represents a divalent organic group having 2 or more carbon atoms. Preferred examples of 4,4′-
Diaminodiphenyl ether, aminophenoxybenzene, bis (4-aminophenoxyphenyl) propane,
Aromatic diamine residues such as bis (4-aminophenoxyphenyl) sulfone residues are preferred. More preferred are paraphenylenediamine, 2,2'-bis (trifluoromethyl) -4,4'-diaminobiphenyl and 4,4'-bis (trifluoromethyl) -4 having a rigid structure in which the bond axis shifts within 30 degrees. '-Diaminoterphenyl, 3,3'-dimethoxybenzidine and the like. In addition, 1 to 30 mol% of the Q 1 and Q 3 components is an aliphatic diamine residue such as ethylenediamine, cyclohexyldiamine residue, or siloxane-containing diamine residue 1,1.
A 3-bis (3-aminopropyl) tetramethyldisiloxane residue or the like can also be blended.

【0012】Q4、Q5は水素原子、炭素数1から10ま
での1価の有機基を表している。Q4とQ5は同じでも異
なっていてもよい。
Q 4 and Q 5 each represent a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms. Q 4 and Q 5 may be the same or different.

【0013】一般式(2)においてQ6、Q8は炭素数2
以上の4価の有機基を表している。このようなものとし
てベンゾフェノンテトラカルボン酸、4,4’−(ヘキ
サフルオロイソプロピリデン)ジフタル酸、ジフェニル
エーテルテトラカルボン酸、ジフェニルスルホンテトラ
カルボン酸残基などの4価の芳香族含有基が好ましい例
として挙げることができる。さらに好ましくは、結合軸
のずれが30度以内であるピロメリット酸、3,3’,
4,4’−ビフェニルテトラカルボン酸残基などの4価
の基を挙げることができる。
In the general formula (2), Q 6 and Q 8 each have 2 carbon atoms.
It represents the above tetravalent organic group. Preferred examples thereof include tetravalent aromatic-containing groups such as benzophenonetetracarboxylic acid, 4,4 ′-(hexafluoroisopropylidene) diphthalic acid, diphenylethertetracarboxylic acid, and diphenylsulfonetetracarboxylic acid residue. be able to. More preferably, pyromellitic acid whose bond axis shift is within 30 degrees, 3,3 ′,
A tetravalent group such as a 4,4′-biphenyltetracarboxylic acid residue can be exemplified.

【0014】Q7は、一般式(1)中のQ2と同様のもの
を使用することができる。一般式(3)はイソイミド構
造を有したものを表している。、Q9、Q11は、炭素数
2以上の4価の有機基を表している。テトラカルボン酸
残基である一般式(2)にあるQ6と同一のものを使用
することができる。Q10は、炭素数2以上の2価の有機
基を表している。このようなものとして一般式(2)の
7と同一のものを使用することができる。
As Q 7 , those similar to Q 2 in the general formula (1) can be used. The general formula (3) represents one having an isoimide structure. , Q 9 and Q 11 represent a tetravalent organic group having 2 or more carbon atoms. The same one as Q 6 in the general formula (2), which is a tetracarboxylic acid residue, can be used. Q 10 represents a divalent organic group having 2 or more carbon atoms. It can be used of the general formula identical to Q 7 (2) as such.

【0015】一般式(4)において、Q12、Q14は、炭
素数2以上の2から4価の有機基を表している。Zは酸
素原子、硫黄原子、NHより選ばれる。このようなもの
としては、ヒドロキシジアミノベンゼン、ジヒドロキシ
ジアミノベンゼン、ビス(3−アミノ−4−ヒドロキシ
フェニル)ヘキサフルオロプロパン、3,3’−ジアミ
ノ−4,4’−ジヒドロキシビフェニル、3,3’−ジ
ヒドロキシ−4,4’−ジアミノビフェニル、チオヒド
ロキシジアミノベンゼン、ジチオヒドロキシジアミノベ
ンゼン、ビス(3−アミノ−4−チオヒドロキシフェニ
ル)ヘキサフルオロプロパン、3,3’−ジアミノ−
4,4’−ジチオヒドロキシビフェニル、3,3’−ジ
チオヒドロキシ−4,4’−ジアミノビフェニル、テト
ラアミノベンゼン、テトラアミノビフェニル残基などを
挙げることができる。さらに、結合軸のずれが30度以
内となる2,5−ジアミノヒドロキシベンゼン、1,4
−ジアミノ−2,5−ジヒドロキシベンゼン、3,3’
−ジアミノ−4,4’−ジヒドロキシビフェニル、3,
3’−ジヒドロキシ−4,4’−ジアミノビフェニル、
2,5−ジアミノチオヒドロキシベンゼン、1,4−ジ
アミノ−2,5−ジチオヒドロキシベンゼン、3,3’
−ジアミノ−4,4’−ジチオヒドロキシビフェニル、
3,3’−ジチオヒドロキシ−4,4’−ジアミノビフ
ェニル、1,2,4,5−テトラアミノベンゼン、3,
3’,4,4’−テトラアミノビフェニル残基などを挙
げることができる。
In the general formula (4), Q 12 and Q 14 represent a divalent to tetravalent organic group having 2 or more carbon atoms. Z is selected from an oxygen atom, a sulfur atom, and NH. Such materials include hydroxydiaminobenzene, dihydroxydiaminobenzene, bis (3-amino-4-hydroxyphenyl) hexafluoropropane, 3,3'-diamino-4,4'-dihydroxybiphenyl, 3,3'- Dihydroxy-4,4'-diaminobiphenyl, thiohydroxydiaminobenzene, dithiohydroxydiaminobenzene, bis (3-amino-4-thiohydroxyphenyl) hexafluoropropane, 3,3'-diamino-
4,4'-dithiohydroxybiphenyl, 3,3'-dithiohydroxy-4,4'-diaminobiphenyl, tetraaminobenzene, tetraaminobiphenyl residues and the like can be mentioned. Further, 2,5-diaminohydroxybenzene, in which the displacement of the bonding axis is within 30 degrees, 1,4
-Diamino-2,5-dihydroxybenzene, 3,3 '
-Diamino-4,4'-dihydroxybiphenyl, 3,
3'-dihydroxy-4,4'-diaminobiphenyl,
2,5-diaminothiohydroxybenzene, 1,4-diamino-2,5-dithiohydroxybenzene, 3,3 ′
-Diamino-4,4'-dithiohydroxybiphenyl,
3,3′-dithiohydroxy-4,4′-diaminobiphenyl, 1,2,4,5-tetraaminobenzene,
3 ', 4,4'-tetraaminobiphenyl residue and the like can be mentioned.

【0016】Q12、Q14成分として2価の基である一般
式(1)中のQ2と同様のものをQ1 1、Q13成分の1か
ら30モル%変性することもできる。
[0016] Q 12, Q 14 component as the divalent radical in which the general formula (1) the same as Q 2 in Q 1 1, Q 13 may be from 1 to 30 mole% denaturation of ingredients.

【0017】Q13は、炭素数2以上の3から6価の有機
基を表している。このようなものとしては、フタル酸、
ジフェニルエーテルジカルボン酸、ジフェニルスルホン
ジカルボン酸、ビフェニルジカルボン酸残基などの芳香
族ジカルボン酸残基、アジピン酸、シクロヘキサンジカ
ルボン酸残基などの脂肪族ジカルボン酸残基などを挙げ
ることができる。耐熱性より見ると芳香族ジカルボン酸
残基を使用するのが好ましい。また、結合軸のずれが3
0度以内となるテレフタル酸、4,4−ジフェニルエー
テルジカルボン酸、4,4−ジフェニルスルホンジカル
ボン酸、4,4−ビフェニルジカルボン酸などを使用す
るのがさらに好ましい。
Q 13 represents a trivalent to hexavalent organic group having 2 or more carbon atoms. These include phthalic acid,
Examples thereof include aromatic dicarboxylic acid residues such as diphenyl ether dicarboxylic acid, diphenyl sulfone dicarboxylic acid, and biphenyl dicarboxylic acid residues, and aliphatic dicarboxylic acid residues such as adipic acid and cyclohexane dicarboxylic acid residues. From the viewpoint of heat resistance, it is preferable to use an aromatic dicarboxylic acid residue. Also, the displacement of the coupling axis is 3
It is more preferable to use terephthalic acid, 4,4-diphenyl ether dicarboxylic acid, 4,4-diphenyl sulfone dicarboxylic acid, 4,4-biphenyl dicarboxylic acid, or the like, which is within 0 degrees.

【0018】一般式(5)において、Q15、Q17は炭素
数2以上の4価の有機基を表している。このようなもの
として、ヒドロキシジアミノベンゼン、ジヒドロキシジ
アミノベンゼン、ビス(3−アミノ−4−ヒドロキシフ
ェニル)ヘキサフルオロプロパン、3,3’−ジアミノ
−4,4’−ジヒドロキシビフェニル、3,3’−ジヒ
ドロキシ−4,4’−ジアミノビフェニル、チオヒドロ
キシジアミノベンゼン、ジチオヒドロキシジアミノベン
ゼン、ビス(3−アミノ−4−チオヒドロキシフェニ
ル)ヘキサフルオロプロパン、3,3’−ジアミノ−
4,4’−ジチオヒドロキシビフェニル、3,3’−ジ
チオヒドロキシ−4,4’−ジアミノビフェニル、テト
ラアミノベンゼン、テトラアミノビフェニル残基などを
挙げることができる。さらに、結合軸のずれが30度以
内となる2,5−ジアミノヒドロキシベンゼン、1,4
−ジアミノ−2,5−ジヒドロキシベンゼン、3,3’
−ジアミノ−4,4’−ジヒドロキシビフェニル、3,
3’−ジヒドロキシ−4,4’−ジアミノビフェニル、
2,5−ジアミノチオヒドロキシベンゼン、1,4−ジ
アミノ−2,5−ジチオヒドロキシベンゼン、3,3’
−ジアミノ−4,4’−ジチオヒドロキシビフェニル、
3,3’−ジチオヒドロキシ−4,4’−ジアミノビフ
ェニル、1,2,4,5−テトラアミノベンゼン、3,
3’,4,4’−テトラアミノビフェニル残基などが脱
水閉環反応したものを挙げることができる。
In the general formula (5), Q 15 and Q 17 represent a tetravalent organic group having 2 or more carbon atoms. Such materials include hydroxydiaminobenzene, dihydroxydiaminobenzene, bis (3-amino-4-hydroxyphenyl) hexafluoropropane, 3,3′-diamino-4,4′-dihydroxybiphenyl, 3,3′-dihydroxy -4,4'-diaminobiphenyl, thiohydroxydiaminobenzene, dithiohydroxydiaminobenzene, bis (3-amino-4-thiohydroxyphenyl) hexafluoropropane, 3,3'-diamino-
4,4'-dithiohydroxybiphenyl, 3,3'-dithiohydroxy-4,4'-diaminobiphenyl, tetraaminobenzene, tetraaminobiphenyl residues and the like can be mentioned. Further, 2,5-diaminohydroxybenzene, in which the displacement of the bonding axis is within 30 degrees, 1,4
-Diamino-2,5-dihydroxybenzene, 3,3 '
-Diamino-4,4'-dihydroxybiphenyl, 3,
3'-dihydroxy-4,4'-diaminobiphenyl,
2,5-diaminothiohydroxybenzene, 1,4-diamino-2,5-dithiohydroxybenzene, 3,3 ′
-Diamino-4,4'-dithiohydroxybiphenyl,
3,3′-dithiohydroxy-4,4′-diaminobiphenyl, 1,2,4,5-tetraaminobenzene,
Those obtained by a dehydration ring-closing reaction of a 3 ′, 4,4′-tetraaminobiphenyl residue and the like can be mentioned.

【0019】Q16は一般式(4)中のQ13のうち4価の
ものと同様のものを使用することができる。一般式
(6)において、Q19、Q21は一般式(1)のQ2と同
じものを使用することができる。Q20は一般式(1)の
1と同じものを使用することができる。Q22は一般式
(1)のQ4と同じものを使用することができる。yは
1から100までの整数を表し、aは1または2を表し
ている。
As Q 16, the same tetravalent Q 13 as Q 13 in formula (4) can be used. In the general formula (6), Q 19 and Q 21 can be the same as Q 2 in the general formula (1). Q 20 can be the same as Q 1 in the general formula (1). Q 22 may be the same as the Q 4 of the general formula (1). y represents an integer from 1 to 100, and a represents 1 or 2.

【0020】一般式(7)において、Q23、Q25は、一
般式(2)のQ7と同じものを使用することができる。
24は一般式(2)のQ6と同じものを使用することが
できる。一般式(8)において、Q27、Q29は、一般式
(4)のQ13と同じものを使用することができる。Q28
は一般式(4)のQ12と同じものを使用することができ
る。Zは酸素原子、硫黄原子、NHより選ばれる。cは
1から100までの整数を表し、d、eは1また2を表
している。一般式(9)において、Q30、Q32、Q
34は、一般式(5)のQ16と同じものを使用するこ
とができる。Q31、Q33は一般式(5)のQ15と
同じものを使用することができる。Zは酸素原子、硫黄
原子、NHより選ばれる。fは1から100までの整数
を表している。
In the general formula (7), the same Q 23 and Q 25 as Q 7 in the general formula (2) can be used.
Q 24 can be the same as Q 6 in the general formula (2). In general formula (8), Q 27 and Q 29 can be the same as Q 13 in general formula (4). Q 28
It can be the same as the Q 12 of the general formula (4). Z is selected from an oxygen atom, a sulfur atom, and NH. c represents an integer from 1 to 100, and d and e represent 1 or 2. In the general formula (9), Q30, Q32, Q
34 can be the same as Q16 in general formula (5). The same Q31 and Q33 as Q15 in the general formula (5) can be used. Z is selected from an oxygen atom, a sulfur atom, and NH. f represents an integer from 1 to 100.

【0021】本発明において、1価の基としては、一般
式(10)に挙げたようなものを使用することができ
る。また。その他の炭素原子3から30までの1価の有
機基、またはケイ素原子を含んだ炭素数3から30まで
の1価の有機基を表している。特にケイ素原子を含有し
ている化合物は接着性改良効果もあるので好ましい。ま
た、これらの基を併用することもできるし、これ以外の
基を使用することもできる。
In the present invention, as the monovalent group, those described in the general formula (10) can be used. Also. Other monovalent organic groups having 3 to 30 carbon atoms or monovalent organic groups having 3 to 30 carbon atoms including a silicon atom are shown. Particularly, a compound containing a silicon atom is preferable because it also has an effect of improving adhesiveness. These groups can be used in combination, and other groups can also be used.

【0022】また、本発明の低誘電率重合体組成物は、
最初に枝分かれ基と2価の基を反応させる。この操作を
繰り返すことで、一般式(12)に示したような放射状
の枝分かれポリマーに近いものが得られると推定され
る。このような適度な枝分かれで広がりを有したポリマ
ーは、2価のモノマーのみで重合した直鎖状のポリマー
に較べるとポリマー鎖同士がお互いに近づきあうことが
なくなり、単位体積当たりのポリマーの体積分率を小さ
くすることができる。このような反応をさせずに、最初
に3価から4価の基とその他の原料を反応させた場合、
ゲル化する恐れがあるので好ましくない。
Further, the low dielectric constant polymer composition of the present invention comprises:
First, a branched group is reacted with a divalent group. It is presumed that by repeating this operation, a material close to a radially branched polymer as shown in the general formula (12) can be obtained. Such a polymer having an appropriate degree of branching and spreading has a structure in which polymer chains do not approach each other as compared with a linear polymer obtained by polymerizing only a divalent monomer, and the volume of the polymer per unit volume is small. The rate can be reduced. If a trivalent to tetravalent group is first reacted with other raw materials without performing such a reaction,
It is not preferable because gelation may occur.

【0023】[0023]

【化21】 (nは1から100までの整数。R0、R2、・・R2n
3価から6価の有機基、ケイ素原子含有基、R1、R3
・・R2n+1は2価の基、nは1から100までの整数、
r0は3から6までの整数、r2、・・r2nは2から5
までの整数を表す。) 本発明のポリマーは、枝分かれした構造をとることで、
ポリマー鎖がお互い近づかなくなるために、バルクポリ
マーの中でポリマー鎖の占める体積分率が低下する。こ
のような体積分率の小さいポリマーは体積分率の大きな
ポリマーより誘電率が低下する傾向にある。これは、絶
縁体の中で誘電率の最も小さいものは真空であり、次い
で空気であるためである。この体積分率は枝分かれポリ
マーと同じ構造を有した線状ポリマーの比重の比率より
見積もることができる。すなわち、単位体積あたりのポ
リマー重量である比重をそのポリマーの構造単位の分子
量で除し、単位体積あたりの分子の数の比で見積もれ
る。すなわち、比重が10%低下したポリマーは、空隙
率が10%増加したものと考えられる。
Embedded image (N is an integer from 1 to 100; R 0 , R 2 ,..., R 2n are a trivalent to hexavalent organic group, a silicon atom-containing group, R 1 , R 3 ,
.. R 2n + 1 is a divalent group, n is an integer from 1 to 100,
r0 is an integer from 3 to 6, r 2 ,..., r 2n is 2 to 5
Represents an integer up to. The polymer of the present invention has a branched structure,
Since the polymer chains do not approach each other, the volume fraction occupied by the polymer chains in the bulk polymer decreases. Such a polymer having a small volume fraction tends to have a lower dielectric constant than a polymer having a large volume fraction. This is because the lowest dielectric constant among insulators is vacuum, followed by air. This volume fraction can be estimated from the ratio of the specific gravity of the linear polymer having the same structure as the branched polymer. That is, the specific gravity, which is the weight of the polymer per unit volume, is divided by the molecular weight of the structural unit of the polymer, and can be estimated by the ratio of the number of molecules per unit volume. That is, it is considered that the polymer having the specific gravity decreased by 10% has the porosity increased by 10%.

【0024】以上の点より、本発明の低誘電率重合体組
成物は、架橋成分である一般式(12)の R0、R2
4である架橋成分を使用せずに、残りは同じ成分を使
用した線状ポリマーと本発明の架橋ポリマーの比重を測
定することで、上記のような体積分率が大きくなると誘
電率が低下する効果を知ることができ、比重が線状ポリ
マーに対して5%以上低下することで、誘電率も5%以
上低下する。誘電率の点より見ると、比重が5%以上で
あり90%より小さい値の範囲で低下することが好まし
く、得られる膜の強度などの点から見ると、比重が90
%以上低下したものは好ましくない。
In view of the above, the low dielectric constant polymer composition of the present invention comprises R 0 , R 2 ,
By measuring the specific gravity of the linear polymer using the same component and the crosslinked polymer of the present invention without using the crosslinking component of R 4 , the dielectric constant decreases when the volume fraction as described above increases. The dielectric constant is reduced by 5% or more when the specific gravity is reduced by 5% or more with respect to the linear polymer. From the viewpoint of the dielectric constant, it is preferable that the specific gravity falls within a range of 5% or more and less than 90%. From the viewpoint of the strength of the obtained film, the specific gravity is 90%.
% Is not preferable.

【0025】本発明のポリマーの製造方法は、まず架橋
成分R0と枝成分R1を反応させ、オリゴマーN1を得
る。続いて架橋成分R2を反応させ、N2を得る。N3
と枝成分R3を反応させN4を得る。このような反応を
2n+1回繰り返すことで得られる。また、反応の最後
に1価の有機基を末端封止基として使用することもでき
る。このようなものとしては、アニリン、プロピルアミ
ンなどの1価のアミン化合物、無水フタル酸、無水コハ
ク酸などの1価の酸無水物などを挙げることができる。
さらに、熱による反応性のあるものを有した、エチニル
アニリン、ビニルアニリンなどの反応性の多重結合を有
した1価のアミン化合物、無水マレイン酸、無水ナジッ
ク酸などの反応性の多重結合を有した1価の酸無水物化
合物などを挙げることができる。また、アミノプロピル
トリエトキシシラン、アミノフェニルトリメトキシシラ
ンなどのケイ素原子含有アミン化合物、トリメトキシシ
リル無水フタル酸などのケイ素原子含有酸無水物化合物
などを用いると基板との接着改良効果もあり、さらに好
ましい。これらの化合物は1種類のみで使用することも
できるが、複数種を混合して使用しても良い。このよう
に逐次的に架橋成分と枝成分を交互に反応させることで
中心から放射状に広がったポリマーを得ることができ
る。
In the method for producing a polymer of the present invention, first, a crosslinking component R 0 is reacted with a branch component R 1 to obtain an oligomer N1. Subsequently, the crosslinking component R 2 is reacted to obtain N 2. N3
Obtain N4 reacted branches component R 3 and. Such a reaction is obtained by repeating 2n + 1 times. At the end of the reaction, a monovalent organic group may be used as a terminal blocking group. Examples of such compounds include monovalent amine compounds such as aniline and propylamine, and monovalent acid anhydrides such as phthalic anhydride and succinic anhydride.
Furthermore, it has a reactive multiple bond such as a monovalent amine compound having a reactive multiple bond such as ethynylaniline and vinylaniline, and a reactive multiple bond such as maleic anhydride and nadic anhydride, which are reactive with heat. And the like. In addition, aminopropyltriethoxysilane, silicon atom-containing amine compounds such as aminophenyltrimethoxysilane, and silicon atom-containing acid anhydride compounds such as trimethoxysilyl phthalic anhydride also have an effect of improving adhesion to a substrate, and preferable. These compounds may be used alone, or a plurality of them may be used in combination. As described above, by sequentially reacting the cross-linking component and the branch component alternately, it is possible to obtain a polymer radially spread from the center.

【0026】本発明のポリマーの分子量、分子量分布
は、GPC法により求めることができる。例えば、ウオ
ーターズ社製510型ポンプと990J型フォトダイオ
ードアレー検出器によるシステムに、東ソー(株)社製
のカラム(TSK−Gel2000)を2本つないだも
のを用いることができる。分子量の校正は、標準ポリス
チレンを分子量1000から100000までのものを
用いた。本発明のポリマーの分子量は5000から10
0万の範囲にあることが好ましい。分子量分布は重量平
均分子量(Mw)と数平均分子量(Mn)の比で表すこ
とができ、1.02<Mw/Mn<2.0の範囲にある
ことが好ましく、さらには1.05<Mw/Mn<1.
5である。
The molecular weight and molecular weight distribution of the polymer of the present invention can be determined by the GPC method. For example, a system in which two columns (TSK-Gel2000) manufactured by Tosoh Corporation are connected to a system using a 510 type pump manufactured by Waters and a 990J type photodiode array detector can be used. For molecular weight calibration, standard polystyrene having a molecular weight of 1,000 to 100,000 was used. The molecular weight of the polymers according to the invention is between 5000 and 10
It is preferably in the range of 10,000. The molecular weight distribution can be represented by the ratio of the weight average molecular weight (Mw) to the number average molecular weight (Mn), preferably in the range of 1.02 <Mw / Mn <2.0, and more preferably 1.05 <Mw. / Mn <1.
5

【0027】本発明の低誘電率組成物の誘電率は、真空
の誘電率に対する比率で表される。一般のポリイミド樹
脂のような耐熱性樹脂組成物の誘電率はおよそ3であ
る。本発明の低誘電率組成物の誘電率は2.7以下が好
ましく、さらに好ましくは2.5以下である。
The dielectric constant of the low dielectric constant composition of the present invention is expressed as a ratio to the dielectric constant of vacuum. The dielectric constant of a heat-resistant resin composition such as a general polyimide resin is about 3. The dielectric constant of the low dielectric constant composition of the present invention is preferably 2.7 or less, more preferably 2.5 or less.

【0028】本発明の比重の測定は、得られる低誘電率
重合体組成物を、前もって重量を正確に測定した薄板ガ
ラスにスピン塗布し、ガラスに均一の膜厚(膜厚ムラが
10%以下)で塗布し、必要な熱処理条件で硬化させ
る。このガラス板の重量と低誘電率重合体組成物の膜厚
を測定することで比重を測定することができる。
In the measurement of the specific gravity of the present invention, the obtained low dielectric constant polymer composition is spin-coated on thin glass whose weight has been accurately measured in advance, and a uniform film thickness (thickness unevenness is 10% or less) is applied to the glass. ) And cured under the required heat treatment conditions. The specific gravity can be measured by measuring the weight of the glass plate and the film thickness of the low dielectric constant polymer composition.

【0029】また、本発明の誘電率の測定は、アルミ箔
上に、低誘電率重合体組成物を均一の膜厚でスピン塗布
し、必要な熱処理条件で硬化させ、ポリマー面にアル
ミ、金、ニッケルなどの金属を電極状に蒸着させること
で測定することができる。
In the measurement of the dielectric constant of the present invention, a low dielectric constant polymer composition is spin-coated on an aluminum foil in a uniform film thickness, cured under a necessary heat treatment condition, and coated with aluminum or gold. It can be measured by depositing a metal such as nickel or the like on an electrode.

【0030】本発明の低誘電率組成物の誘電率の温度に
よる依存性は、0.1%/℃以下であることが好まし
い。誘電率の温度変化がこれより大きいと、実際の素子
や基板の絶縁材料として本発明の低誘電率組成物を使用
した場合、温度により誘電率が変化することで、素子や
基板の温度変化による信号の伝達状態が変化するために
好ましくない。
The dependence of the dielectric constant of the low dielectric constant composition of the present invention on temperature is preferably 0.1% / ° C. or less. If the temperature change of the dielectric constant is larger than this, when the low dielectric constant composition of the present invention is used as an insulating material of an actual device or substrate, the dielectric constant changes with temperature, and the temperature change of the device or substrate It is not preferable because the signal transmission state changes.

【0031】本発明の低誘電率重合体組成物は、N−メ
チル−2−ピロリドン、N,N−ジメチルホルムアミ
ド、N,N−ジメチルアセトアミド、ジメチルスルホキ
シド、γ−ブチロラクロン、ジメチルアクリルアミドな
どの非プロトン性極性溶媒、乳酸エチルやプロピレング
リコ−ルモノメチルエーテルアセテートなどのエステル
類、エタノールなどのアルコール類、シクロヘキサノ
ン、メチルイソブチルケトンなどのケトン類、テトラヒ
ドロフラン、ジオキサンなどのエーテル類、メタクレゾ
ール、p−クロロフェノールなどのフェノール類、ある
いはこれらの混合したものなどの有機溶媒に溶解するも
のである。一般に3価から4価の架橋モノマー類が5モ
ル%以上含まれると、網目構造が形成され、有機溶媒に
溶解しないものがほとんどであるが、本発明の低誘電率
組成物では、反応を逐次的に行い、得られるポリマーの
構造を制御することで有機溶媒に溶解するようになって
いる。
The low dielectric constant polymer composition of the present invention comprises a non-proton such as N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, dimethylacrylamide and the like. Polar solvents, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, alcohols such as ethanol, ketones such as cyclohexanone and methyl isobutyl ketone, ethers such as tetrahydrofuran and dioxane, meta-cresol, p-chlorophenol And the like, or dissolved in an organic solvent such as a phenol or a mixture thereof. In general, when the trivalent to tetravalent crosslinking monomers are contained in an amount of 5 mol% or more, a network structure is formed and most of the monomers are not dissolved in an organic solvent. However, in the low dielectric constant composition of the present invention, the reaction is sequentially performed. The polymer is dissolved in an organic solvent by controlling the structure of the obtained polymer.

【0032】本発明の低誘電率重合体組成物は、溶融成
形できるようなものもある。一般に3価から4価の架橋
モノマー類が5モル%以上含まれると、網目構造が形成
され、得られるポリマーのガラス転移温度が400℃以
上の高温になる。溶融成形を行うため、ポリマーのガラ
ス転移温度以上に加熱すると、熱分解反応、熱架橋反応
などが起こり、さらに溶融しにくいものになる。しかし
ながら、本発明の低誘電率組成物では、反応を逐次的に
行い、得られるポリマーの構造を制御することで、得ら
れるポリマーのガラス転移温度を300℃付近となり、
溶融成形できるものも得ることができる。
Some of the low dielectric constant polymer compositions of the present invention can be melt-molded. In general, when the trivalent to tetravalent crosslinking monomers are contained in an amount of 5 mol% or more, a network structure is formed, and the glass transition temperature of the obtained polymer becomes as high as 400 ° C. or more. If the polymer is heated to a temperature equal to or higher than the glass transition temperature of the polymer for performing the melt molding, a thermal decomposition reaction, a thermal crosslinking reaction, and the like occur, and the polymer is hardly melted. However, in the low dielectric constant composition of the present invention, by sequentially performing the reaction and controlling the structure of the obtained polymer, the glass transition temperature of the obtained polymer becomes around 300 ° C.,
What can be melt-molded can also be obtained.

【0033】また、必要に応じて本発明の低誘電率重合
体組成物と基板との塗れ性を向上させる目的で界面活性
剤を混合しても良い。また、2酸化ケイ素、2酸化チタ
ンなどの無機粒子、あるいはポリイミドの粉末などを添
加することもできる。
If necessary, a surfactant may be mixed for the purpose of improving the wettability between the low dielectric constant polymer composition of the present invention and a substrate. In addition, inorganic particles such as silicon dioxide and titanium oxide, or powder of polyimide can also be added.

【0034】下地との接着性を向上する目的で、シラン
カップリング剤、チタンキレート剤、アルミキレート剤
を低誘電率重合体組成物のワニスに加えたり、基板を前
処理することもできる。
For the purpose of improving the adhesion to the substrate, a silane coupling agent, a titanium chelating agent, or an aluminum chelating agent may be added to the varnish of the low dielectric constant polymer composition, or the substrate may be pretreated.

【0035】次に、本発明の低誘電率重合体組成物を用
いてパターンを形成する方法について説明する。
Next, a method for forming a pattern using the low dielectric constant polymer composition of the present invention will be described.

【0036】本発明の低誘電率重合体組成物を基板上に
塗布する。基板としてはシリコンウエハー、セラミック
ス類、ガリウムヒ素などが用いられるが、これらに限定
されない。塗布方法としてはスピンナを用いた回転塗
布、スプレー塗布、ロールコーティングなどの方法があ
る。また、塗布膜厚は、塗布手法、組成物の固形分濃
度、粘度などによって異なるが、通常乾燥後の膜厚が、
0.1から150μmになるように塗布される。
The low dielectric constant polymer composition of the present invention is applied on a substrate. As the substrate, a silicon wafer, ceramics, gallium arsenide, or the like is used, but is not limited thereto. Examples of the coating method include spin coating using a spinner, spray coating, and roll coating. The coating thickness is different depending on the coating method, the solid content concentration of the composition, the viscosity, etc.
It is applied so as to have a thickness of 0.1 to 150 μm.

【0037】本発明の低誘電率重合体組成物のパターン
を形成するには、100℃から500℃の範囲で熱処理
された樹脂膜にフォトレジストを塗布する。このフォト
レジストを露光し、現像することで、フォトレジストの
パターンが得られる。このパターンをマスクに、プラズ
マエッチング、反応性イオンエッチング、レーザーアブ
レーションなどの手法で、希望する低誘電率重合体組成
物膜のパターンを得ることができる。また、ヒドラジン
などの薬品で科学的にエッチングすることもできる。続
いて、熱処理を行う場合と行わない場合の両方が考えら
れるが、どちらでも使用することができる。この熱処理
は、200℃から500℃の温度を加えて耐熱性のある
皮膜に変換する。この加熱処理は温度を選び、段階的に
昇温するか、ある温度範囲を選び連続的に昇温しながら
5分から5時間実施する。一例としては、140℃、2
00℃、400℃で各30分づつ熱処理する。あるいは
室温より400℃まで2時間かけて直線的に昇温するな
どの方法が挙げられる。
In order to form a pattern of the low dielectric constant polymer composition of the present invention, a photoresist is applied to a resin film which has been heat-treated at a temperature of 100 ° C. to 500 ° C. The photoresist pattern is obtained by exposing and developing the photoresist. Using this pattern as a mask, a desired pattern of the low dielectric constant polymer composition film can be obtained by a method such as plasma etching, reactive ion etching, or laser ablation. Moreover, it can also be scientifically etched with a chemical such as hydrazine. Subsequently, both cases where heat treatment is performed and cases where heat treatment is not performed are conceivable, but both can be used. This heat treatment converts the film into a heat-resistant film by applying a temperature of 200 ° C. to 500 ° C. This heat treatment is carried out for 5 minutes to 5 hours while selecting the temperature and increasing the temperature stepwise, or while selecting a certain temperature range and continuously increasing the temperature. For example, at 140 ° C., 2
Heat treatment at 00 ° C. and 400 ° C. for 30 minutes each. Alternatively, a method of linearly raising the temperature from room temperature to 400 ° C. over 2 hours may be used.

【0038】本発明による低誘電重合体組成物により形
成した耐熱性皮膜は、半導体のパッシベーション膜、半
導体素子の保護膜、半導体の層間絶縁膜、高密度実装用
多層配線の層間絶縁膜などの用途に用いられる。
The heat-resistant film formed by the low dielectric polymer composition according to the present invention is used for a passivation film of a semiconductor, a protective film of a semiconductor element, an interlayer insulating film of a semiconductor, an interlayer insulating film of a multilayer wiring for high-density mounting, and the like. Used for

【0039】[0039]

【実施例】以下、実施例により本発明を具体的に説明す
るが、本発明はこれに限定されない。 特性の測定方法 誘電率の測定 厚み25μmのアルミ箔上に本発明の低誘電率重合体組
成物のワニスをミカサ製1H−D2Sスピンコーターを
用いてスピンコートする。このアルミ箔を大日本スクリ
ーン社製のSKW−636のホットプレートを用いて、
100℃で5分プリベークする。プリベーク後の膜厚が
5μmになるようにスピンコートでの回転数を調整す
る。
EXAMPLES The present invention will be described below in detail with reference to examples, but the present invention is not limited to these examples. Method for Measuring Characteristics Measurement of Dielectric Constant A varnish of the low dielectric constant polymer composition of the present invention is spin-coated on an aluminum foil having a thickness of 25 μm using a 1H-D2S spin coater manufactured by Mikasa. Using a hot plate of SKW-636 made by Dainippon Screen,
Prebake at 100 ° C for 5 minutes. The number of revolutions in spin coating is adjusted so that the film thickness after prebaking is 5 μm.

【0040】このようにして得た低誘電率重合体組成物
をスピンコートしたアルミ箔をヤマト科学製DH−42
イナートオーブンで窒素気流下熱処理する。この熱処理
条件は、200℃で30分処理した後、350℃まで1
時間で昇温し、350℃で1時間処理し、オーブン内の
温度が200℃以下になったところでオーブンより取り
出した。
The aluminum foil spin-coated with the low dielectric constant polymer composition thus obtained was coated with DH-42 manufactured by Yamato Scientific Co., Ltd.
Heat-treat in an inert oven under a nitrogen stream. The heat treatment conditions are as follows: after treating at 200 ° C. for 30 minutes,
The temperature was raised at 350 ° C. for 1 hour, and when the temperature in the oven became 200 ° C. or less, it was taken out of the oven.

【0041】この低誘電率重合体組成物のフィルム面に
アルミニウムを約100nm蒸着し、電極をフィルム上
に形成した。蒸着はアルバック社製EBH−6型を使用
した。
About 100 nm of aluminum was deposited on the film surface of the low dielectric constant polymer composition to form an electrode on the film. EBH-6 type manufactured by ULVAC, Inc. was used for vapor deposition.

【0042】この試料を用いて、ヒューレットパッカー
ド社製LCRメーター4288Aとフィルム用測定電極
14865Aを使用して、周波数1kHzで誘電率を測
定した。
Using this sample, the permittivity was measured at a frequency of 1 kHz using an LCR meter 4288A manufactured by Hewlett-Packard Company and a measuring electrode 14865A for a film.

【0043】比重の測定 松浪ガラス社製スライドガラス(40mm×50mm、
厚み0.12〜0.17mm(No.1))をイソプロ
ピルアルコールで表面を洗浄した。ヤマト科学社製通風
オーブンDT−42で100℃で4時間乾燥させ、シリ
カゲルを入れたガラス製のデシケーターで冷却した。室
温まで冷却された後、AD社製精密天秤ER−182A
でこのガラス板の重量を測定した。この重量を測定した
ガラス板上に、低誘電率重合体組成物のワニスをミカサ
社製スピンナー1H−DSを用いてスピン塗布し、熱処
理後の膜厚が約5μmになるようにした。
Measurement of Specific Gravity A slide glass (40 mm × 50 mm, manufactured by Matsunami Glass Co., Ltd.)
The surface having a thickness of 0.12 to 0.17 mm (No. 1) was washed with isopropyl alcohol. It was dried in a ventilation oven DT-42 manufactured by Yamato Scientific Co., Ltd. at 100 ° C. for 4 hours, and cooled with a glass desiccator containing silica gel. After cooling to room temperature, AD precision balance ER-182A
Was used to measure the weight of this glass plate. A varnish of the low dielectric constant polymer composition was spin-coated on the glass plate whose weight was measured using a spinner 1H-DS manufactured by Mikasa Co., Ltd., so that the film thickness after the heat treatment was about 5 μm.

【0044】このスピンコートしたガラス板を大日本ス
クリーン社製コーターデベロッパーSKW−636のホ
ットプレート部分を用いて80℃で5分、120℃で5
分プリベークした。さらに、ヤマト科学社製イナートオ
ーブンDT−42を用いて、140℃で30分、その後
350℃に昇温して1時間窒素中で熱処理した(酸素濃
度20ppm以下)。その後、オーブンの温度が200
℃以下になったところで、オーブン内より取り出した。
The spin-coated glass plate was heated at 80 ° C. for 5 minutes and at 120 ° C. for 5 minutes using a hot plate portion of a coater developer SKW-636 manufactured by Dainippon Screen.
Prebaked for minutes. Furthermore, using an inert oven DT-42 manufactured by Yamato Scientific Co., Ltd., the mixture was heated at 140 ° C. for 30 minutes, then heated to 350 ° C. and heat-treated in nitrogen for 1 hour (oxygen concentration: 20 ppm or less). After that, the oven temperature is 200
When the temperature fell below ℃, it was taken out of the oven.

【0045】オーブンより取り出したサンプルは、デシ
ケーター内に入れ放冷して、室温になった後にAD社製
精密天秤ER−182Aを用いて重量を測定した。この
重量とガラス板のみの重量より、塗布された膜の重量を
求めた。次いで膜厚を、塗布した面の一部に片歯カミソ
リで傷を入れ、この傷のあるところと無いところを東京
精密社製”サーフコム”1500を用いて測定して段差
を膜厚とした。
The sample taken out of the oven was placed in a desiccator, allowed to cool, allowed to cool to room temperature, and then weighed using a precision balance ER-182A manufactured by AD. From this weight and the weight of the glass plate alone, the weight of the applied film was determined. Next, a part of the coated surface was scratched with a single-tooth razor, and the part with and without the scratch was measured using “Surfcom” 1500 manufactured by Tokyo Seimitsu Co., Ltd. to determine the step.

【0046】比重は、この膜の重量(g単位)を体積で
ある面積(4.0cm×5.0cm)と膜厚(cm単
位)を乗じたもので除することで得られた。
The specific gravity was obtained by dividing the weight (g unit) of this film by the area (4.0 cm × 5.0 cm), which is the volume, multiplied by the film thickness (cm unit).

【0047】接着性の測定(PCT接着試験) 4インチのシリコンウエハー上に本発明の低誘電率重合
体組成物のワニスを大日本スクリーン社製SCW−63
6のスピンコーターを用いてスピンコートする。このシ
リコンウエハーを大日本スクリーン社製のSCW−63
6のホットプレートを用いて、100℃で5分プリベー
クする。プリベーク後の膜厚が5μmになるようにスピ
ンコートでの回転数を調整する。
Adhesion Measurement (PCT Adhesion Test) A varnish of the low dielectric constant polymer composition of the present invention was coated on a 4-inch silicon wafer by SCW-63 manufactured by Dainippon Screen.
6 is spin-coated using the spin coater. SCW-63 manufactured by Dainippon Screen Co., Ltd.
Prebake at 100 ° C. for 5 minutes using the hot plate of No. 6. The number of revolutions in spin coating is adjusted so that the film thickness after prebaking is 5 μm.

【0048】このようにして得た低誘電率重合体組成物
をスピンコートしたシリコンウエハーを光洋リンドバー
グ社製イナートオーブンINH−15で窒素気流下(酸
素濃度20ppm以下)で熱処理する。この熱処理条件
は、140℃で30分処理した後、350℃まで1時間
で昇温し、350℃で1時間処理し、オーブン内の温度
が200℃以下になったところでオーブンより取り出し
た。
The silicon wafer spin-coated with the low dielectric constant polymer composition thus obtained is heat-treated in an inert oven INH-15 manufactured by Koyo Lindberg Co. under a nitrogen stream (oxygen concentration: 20 ppm or less). The heat treatment conditions were as follows: after treatment at 140 ° C. for 30 minutes, the temperature was raised to 350 ° C. in 1 hour, the treatment was performed at 350 ° C. for 1 hour, and when the temperature in the oven became 200 ° C. or less, it was taken out of the oven.

【0049】この低誘電率重合体組成物を塗布したシリ
コンウエハーの膜に幅2mmで碁盤目状に傷を5本ずつ
横方向と縦方向に片歯カミソリで入れた。この膜の接着
性をニチバン社製”セロテープ”を用いて引き剥がし試
験をした。この時点(初期)で剥離が見られたものは接
着性が非常に悪いことになる。この時点で剥がれなかっ
たものは、121℃で2.1気圧の飽和水蒸気下500
時間処理した。500時間後、同様の引き剥がし試験を
行い、剥離するかどうかを調べた。この時に剥離が見ら
れなければ、接着性は良好である。
The film of the silicon wafer coated with the low dielectric constant polymer composition was scratched in a grid pattern with a width of 2 mm and five in a horizontal and vertical direction with a single-tooth razor. The adhesion of the film was peeled off using "Cellotape" manufactured by Nichiban Co., Ltd. At this point (initial stage), those having peeled off have very poor adhesion. What was not peeled off at this time was 500 ° C under 121 ° C and 2.1 atm of saturated steam.
Time processed. After 500 hours, a similar peeling test was performed to examine whether or not the film was peeled. If no peeling is observed at this time, the adhesion is good.

【0050】膜厚の測定 シリコンウエハー、ガラス板に塗布して、熱処理した試
料を片歯カミソリで傷をつけ、東京精密製表面粗さ計サ
ーフコム1500Aを用いて、傷のある部分と無い部分
の段差を測定し膜厚とした。
Measurement of Film Thickness A sample coated and heat-treated on a silicon wafer or a glass plate is scratched with a single-tooth razor, and a surface roughness meter Surfcom 1500A manufactured by Tokyo Seimitsu Co., Ltd. is used. The level difference was measured and used as the film thickness.

【0051】耐熱性の測定 ブリキ製の皿に測定対象のワニスを1g入れた。これを
ヤマト科学社製イナートオーブンDT−42で窒素気流
下(酸素濃度20ppm以下)で熱処理する。この熱処
理条件は、80℃で30分処理した後、200℃で30
分、その後350℃まで1時間で昇温し、350℃で1
時間処理し、オーブン内の温度が200℃以下になった
ところでオーブンより取り出した。
Measurement of heat resistance 1 g of a varnish to be measured was placed in a tin plate. This is heat-treated in a nitrogen stream (oxygen concentration 20 ppm or less) in an inert oven DT-42 manufactured by Yamato Scientific Co., Ltd. This heat treatment is performed at 80 ° C. for 30 minutes and then at 200 ° C. for 30 minutes.
Minutes, and then the temperature is raised to 350 ° C. in one hour,
After a time treatment, when the temperature in the oven became 200 ° C. or less, it was taken out of the oven.

【0052】このようにして得た低誘電率重合体組成物
の粉体を集め、島津製作所製熱天秤装置TG−50を用
いて、昇温速度10℃/分で室温より600℃まで測定
し、300℃になった時点から5%重量が減少した温度
を熱分解温度とした。この熱分解温度が450℃より低
いものは、半導体製造工程で450℃程度の熱が加わる
工程でガスを発生する恐れがあり、耐熱性で問題があ
る。
The powder of the low dielectric constant polymer composition thus obtained was collected and measured from room temperature to 600 ° C. at a heating rate of 10 ° C./min using a thermal balance apparatus TG-50 manufactured by Shimadzu Corporation. The temperature at which the weight decreased by 5% from the point at which the temperature reached 300 ° C. was defined as the thermal decomposition temperature. When the thermal decomposition temperature is lower than 450 ° C., gas may be generated in a process in which heat of about 450 ° C. is applied in a semiconductor manufacturing process, and there is a problem in heat resistance.

【0053】合成例1 架橋モノマー(1)の合成 窒素導入管、攪拌羽、温度計を取り付けた、500ml
の4つ口フラスコに1,3,5−トリヒドロキシベンゼ
ン12.6g(0.1mol)をN−メチル−2−ピロ
リドン(NMP)150gに溶解させ、ここに炭酸カリ
ウム24.2g(0.175mol)を加え70℃で分
散させた。ここに、パラニトロクロロベンゼン47.3
g(0.3mol)を加え、150℃で6時間反応を行
った。反応終了後、溶液の温度が十分に低下してからろ
過により無機塩を除き、ろ液を水3lに入れ沈殿を生成
させた。この沈殿をろ過により集め、70℃で12時間
真空乾燥した(収量:35g、収率71.5%)。
Synthesis Example 1 Synthesis of Crosslinking Monomer (1) 500 ml equipped with a nitrogen inlet tube, a stirring blade and a thermometer
12.6 g (0.1 mol) of 1,3,5-trihydroxybenzene was dissolved in 150 g of N-methyl-2-pyrrolidone (NMP), and 24.2 g (0.175 mol) of potassium carbonate was added thereto. ) And dispersed at 70 ° C. Here, para-nitrochlorobenzene 47.3
g (0.3 mol) was added, and the reaction was carried out at 150 ° C. for 6 hours. After completion of the reaction, the inorganic salt was removed by filtration after the temperature of the solution was sufficiently lowered, and the filtrate was poured into 3 l of water to form a precipitate. The precipitate was collected by filtration and dried in vacuo at 70 ° C. for 12 hours (yield: 35 g, 71.5%).

【0054】この真空乾燥したもの30gをエタノール
1000gに分散させ、ここに5%パラジウムカーボン
1.5gを入れ、水素をためた風船を取り付け、50℃
で8時間、水素の吸収が停止するまで還元反応を行っ
た。
30 g of the vacuum-dried product was dispersed in 1000 g of ethanol, and 1.5 g of 5% palladium carbon was added thereto, and a balloon containing hydrogen was attached thereto.
For 8 hours until the absorption of hydrogen ceased.

【0055】反応終了後、ろ過してろ液を集め、エバポ
レートして目的の架橋モノマー(1)を得た(収量:2
2g、収率90%)。
After completion of the reaction, the filtrate was collected by filtration and evaporated to obtain the desired crosslinked monomer (1) (yield: 2).
2g, 90% yield).

【0056】合成例2 架橋モノマー(2)の合成 窒素導入管、攪拌羽、温度計、蒸留管を取り付けた、3
00mlの4つ口フラスコに3−アミノプロピルジエト
キシメチルシラン(APDS)57.4g(0.3モ
ル)をガンマブチロラクトン30g、3−メチル−3−
メトキシブタノール27.4gに溶解させ、ここに水
3.6g(0.2mol)を加え30℃で攪拌し、溶液
の温度を徐々に高くし、110℃で2時間攪拌した。蒸
留管より水、エタノールを流出させる。この溶液を冷却
して、平均で3分子のAPDSが結合した3価の架橋モ
ノマー(2)の50%溶液を得た。反応にはこの溶液を
そのまま用いた。
Synthesis Example 2 Synthesis of Crosslinking Monomer (2) 3 equipped with a nitrogen inlet tube, a stirring blade, a thermometer, and a distillation tube
In a 00 ml four-necked flask, 37.4 g (0.3 mol) of 3-aminopropyldiethoxymethylsilane (APDS) was added to 30 g of gamma-butyrolactone and 3-methyl-3-methyl-3-butyrolactone.
Dissolved in 27.4 g of methoxybutanol, 3.6 g (0.2 mol) of water was added thereto, and the mixture was stirred at 30 ° C., and the temperature of the solution was gradually increased, followed by stirring at 110 ° C. for 2 hours. Discharge water and ethanol from the distillation tube. The solution was cooled to obtain a 50% solution of a trivalent crosslinking monomer (2) to which an average of three molecules of APDS were bound. This solution was used as it was for the reaction.

【0057】合成例3 架橋モノマー(3)(トリ(4
−アミノフェニル)アミン)の合成 トリフェニルアミン24.5g(0.1モル)を硫酸7
0g中に溶解させた。ここに、61%硝酸を35gを徐
々に加えた。硝酸を加えた後、2時間攪拌して、氷の入
った、5%炭酸水素ナトリウム水溶液3lに投入して得
られた固体をろ過で集めた。集めた固体を水で十分洗浄
した後、50℃の真空乾燥機で20時間乾燥させた(収
量26g)。
Synthesis Example 3 Crosslinking monomer (3) (tri (4
-Aminophenyl) amine) 24.5 g (0.1 mol) of triphenylamine was added to sulfuric acid 7
Dissolved in 0 g. Here, 35 g of 61% nitric acid was gradually added. After adding nitric acid, the mixture was stirred for 2 hours, poured into 3 L of a 5% aqueous sodium hydrogen carbonate solution containing ice, and the obtained solid was collected by filtration. After the collected solid was sufficiently washed with water, it was dried in a vacuum dryer at 50 ° C. for 20 hours (yield 26 g).

【0058】上記で乾燥した固体20gを500mlの
オートクレーブに入れ、メチルセロソルブ300mlを
5%−パラジウム−炭素1.5gとともに加えた。容器
内を水素ガスにて置換して、その後水素圧を8kgf/
cm2にして70℃で2時間攪拌しながら還元処理をし
た。反応後、内部の温度が30℃以下になったところ
で、容器の圧力を除き、内部の溶液からろ過でパラジウ
ム−炭素を除いた。ろ液をロータリーエバポレーターで
濃縮して、トリ(4−アミノフェニル)アミンを得た
(収量:14g)。
20 g of the dried solid was placed in a 500 ml autoclave, and 300 ml of methyl cellosolve was added together with 1.5 g of 5% palladium-carbon. The inside of the container was replaced with hydrogen gas, and then the hydrogen pressure was increased to 8 kgf /
A reduction treatment was performed while stirring at 70 ° C. for 2 hours. After the reaction, when the internal temperature became 30 ° C. or less, the pressure in the vessel was removed, and palladium-carbon was removed from the internal solution by filtration. The filtrate was concentrated with a rotary evaporator to obtain tri (4-aminophenyl) amine (yield: 14 g).

【0059】実施例1 窒素気流下、1000mlの4つ口フラスコに、枝分か
れ成分である3,4,4’−トリアミノジフェニルエー
テル(TPE)0.215g(1mmol)をN、N−
ジメチルアセトアミド(DMAc))10gに溶解させ
た。ここに無水ピロメリット酸(PMDA)0.654
g(3mmol)をNMP15gと共に加えて、30℃
で5分攪拌した。続いて、2,2’−ジメチル−4,
4’−ジアミノビフェニル(DMB)0.636g(3
mmol)を加えて、30℃で1時間攪拌した。
Example 1 In a nitrogen stream, 0.215 g (1 mmol) of 3,4,4'-triaminodiphenyl ether (TPE), which is a branched component, was placed in a 1000 ml four-necked flask under N, N-
Dimethylacetamide (DMAc)). Here, pyromellitic anhydride (PMDA) 0.654
g (3 mmol) together with 15 g of NMP,
For 5 minutes. Subsequently, 2,2′-dimethyl-4,
0.636 g of 4'-diaminobiphenyl (DMB) (3
mmol) and stirred at 30 ° C. for 1 hour.

【0060】その後、TPE0.646g(3mmo
l)をDMAc5gとともに加え、PMDA0.654
g(3mmol)を加えた。加えた後、30℃で1時間
攪拌した。ついでDMB1.272g(6mmol)を
DMAc8gとともに加えて溶解した後、PMDA1.
309g(6mmol)を加え、30℃で1時間攪拌し
た。
Thereafter, 0.646 g of TPE (3 mmo
l) was added along with 5 g of DMAc, and 0.654 PMDA was added.
g (3 mmol) was added. After the addition, the mixture was stirred at 30 ° C. for 1 hour. Then, 1.272 g (6 mmol) of DMB was added and dissolved together with 8 g of DMAc, and then PMDA1.
309 g (6 mmol) was added, and the mixture was stirred at 30 ° C. for 1 hour.

【0061】その後、TPE1.292g(6mmo
l)をDMAc15gとともに加え、PMDA1.30
9g(6mmol)を加えた。加えた後、30℃で1時
間攪拌した。ついでDMB2.544g(12mmo
l)をDMAc30gとともに加えて溶解した後、PM
DA2.617g(12mmol)を加え、30℃で1
時間攪拌した。
Thereafter, 1.292 g of TPE (6 mm
l) was added along with 15 g of DMAc and PMDA 1.30
9 g (6 mmol) were added. After the addition, the mixture was stirred at 30 ° C. for 1 hour. Then 2.544 g of DMB (12 mmo
l) was added and dissolved together with 30 g of DMAc, and then PM
2.617 g (12 mmol) of DA were added, and 1
Stirred for hours.

【0062】その後、TPE2.584g(12mmo
l)をDMAc20gとともに加え、PMDA2.61
7g(12mmol)を加えた。加えた後、30℃で1
時間攪拌した。ついでDMB5.167g(24mmo
l)をDMAc30gとともに加えて溶解した後、PM
DA5.235g(24mmol)を加え、30℃で1
時間攪拌した。
Thereafter, 2.584 g of TPE (12 mmo
l) was added along with 20 g of DMAc and PMDA 2.61 was added.
7 g (12 mmol) were added. After adding, 1 at 30 ° C
Stirred for hours. Then 5.167 g of DMB (24 mmo
l) was added and dissolved together with 30 g of DMAc, and then PM
5.235 g (24 mmol) of DA were added, and 1
Stirred for hours.

【0063】最後にアニリン1.302g(14mmo
l)、3−アミノプロピルトリメトキシシラン2.21
3g(10mmol)を加え、PMDA5.235g
(24mmol)をDMAc20gとともに加え、30
℃で2時間攪拌した(架橋モノマーの配合量:11.5
モル%)。
Finally, 1.32 g of aniline (14 mmo)
l), 3-Aminopropyltrimethoxysilane 2.21
3 g (10 mmol) were added, and 5.235 g of PMDA was added.
(24 mmol) together with 20 g of DMAc,
The mixture was stirred at 2 ° C. for 2 hours.
Mol%).

【0064】得られた上記反応溶液を孔径1μmのポリ
テトラフルオロエチレン製メンブレンフィルター(住友
電工製、FP−100)でろ過した溶液を用いて評価を
行った。
The obtained reaction solution was evaluated by using a solution filtered through a polytetrafluoroethylene membrane filter (FP-100, manufactured by Sumitomo Electric Industries) having a pore size of 1 μm.

【0065】誘電率は2.21であり、比重は1.53
であった。接着性も問題なく500時間後も剥離しなか
った。耐熱性は530℃であった。
The dielectric constant is 2.21 and the specific gravity is 1.53
Met. There was no problem with the adhesiveness, and it did not peel off even after 500 hours. The heat resistance was 530 ° C.

【0066】実施例2 窒素気流下、1000mlの4つ口フラスコに、枝分か
れ成分であるメラミン0.126g(1mmol)をメ
タクレゾール40g、イソキノリン0.2gと共に入
れ、ここに3,3’,4,4’−ビフェニルテトラカル
ボン酸2無水物(BPDA)0.883g(3mmo
l)を加え70℃で30分、その後150℃で1時間反
応させた。次いで液の温度を70℃に冷却して、2,
2’−ビス(トリフルオロメチル)−4,4’−ジアミ
ノジフェニル(TFMB)0.961g(3mmol)
を加え、70℃で10分、その後150℃で30分反応
させ、再度、溶液の温度を70℃に冷却し、BPDA
0.883g(3mmol)を加え、70℃で10分、
150℃で30分反応させた。これにより、請求項2に
記載されたN1に相当する化合物を得た。
Example 2 Under a nitrogen stream, 0.126 g (1 mmol) of melamine, which is a branched component, was put into a 1000 ml four-necked flask together with 40 g of metacresol and 0.2 g of isoquinoline. 0.883 g of 4'-biphenyltetracarboxylic dianhydride (BPDA) (3 mmol
l) was added and reacted at 70 ° C. for 30 minutes, then at 150 ° C. for 1 hour. Next, the temperature of the liquid was cooled to 70 ° C.,
0.961 g (3 mmol) of 2'-bis (trifluoromethyl) -4,4'-diaminodiphenyl (TFMB)
, And reacted at 70 ° C. for 10 minutes and then at 150 ° C. for 30 minutes. The temperature of the solution was cooled again to 70 ° C., and BPDA was added.
0.883 g (3 mmol) was added and the mixture was added at 70 ° C. for 10 minutes.
The reaction was performed at 150 ° C. for 30 minutes. Thus, a compound corresponding to N1 described in claim 2 was obtained.

【0067】さらに、メラミン0.378g(3mmo
l)を加え、100℃で10分、150℃で30分反応
させることで、請求項2に記載されたN2に相当する化
合物を得た。次いで、4,4’−(ヘキサフルオロイソ
プロピリデン)ジフタル酸無水物(6FDA)2.66
6g(6mmol)をメタクレゾール40g、イソキノ
リン0.2gとともに加え70℃で30分、その後15
0℃で1時間反応させた。次いで液の温度を70℃に冷
却して、TFMB1.921g(6mmol)を加え、
70℃で10分、その後150℃で30分反応させ、溶
液の温度を70℃に冷却し、6FDA2.666g(6
mmol)を加え、70℃で10分、150℃で30分
反応させた。これにより、請求項2に記載されたN3に
相当する化合物を得た。
Further, 0.378 g of melamine (3 mmo
1) was added and reacted at 100 ° C. for 10 minutes and at 150 ° C. for 30 minutes to obtain a compound corresponding to N2 according to claim 2. Then, 4,4 '-(hexafluoroisopropylidene) diphthalic anhydride (6FDA) 2.66
6 g (6 mmol) together with 40 g of meta-cresol and 0.2 g of isoquinoline are added at 70 ° C. for 30 minutes, and then 15 minutes.
The reaction was performed at 0 ° C. for 1 hour. Then, the temperature of the liquid was cooled to 70 ° C., and 1.921 g (6 mmol) of TFMB was added.
The reaction was carried out at 70 ° C. for 10 minutes and then at 150 ° C. for 30 minutes, the temperature of the solution was cooled to 70 ° C., and 2.666 g of 6FDA (6.
mmol) and reacted at 70 ° C. for 10 minutes and at 150 ° C. for 30 minutes. As a result, a compound corresponding to N3 described in claim 2 was obtained.

【0068】さらに、メラミン0.756g(6mmo
l)を加え、100℃で10分、150℃で30分反応
させ、請求項2に記載されたN4に相当する化合物を得
た。次いで、6FDA5.333g(12mmol)を
メタクレゾール60g、イソキノリン0.1gとともに
加え70℃で30分、その後150℃で30分反応させ
た。次いで液の温度を70℃に冷却して、TFMB3.
842g(12mmol)を加え、70℃で10分、そ
の後150℃で30分反応させ、溶液の温度を70℃に
冷却し、6FDA5.333g(12mmol)を加
え、70℃で10分、150℃で30分反応させた。こ
れにより、請求項2に記載されたN5に相当する化合物
を得た。
Further, 0.756 g of melamine (6 mm
1) was added and reacted at 100 ° C. for 10 minutes and at 150 ° C. for 30 minutes to obtain a compound corresponding to N4 according to claim 2. Next, 5.333 g (12 mmol) of 6FDA was added together with 60 g of meta-cresol and 0.1 g of isoquinoline, and the mixture was reacted at 70 ° C. for 30 minutes and then at 150 ° C. for 30 minutes. Then, the temperature of the solution was cooled to 70 ° C., and TFMB3.
842 g (12 mmol) was added, and the mixture was reacted at 70 ° C. for 10 minutes and then at 150 ° C. for 30 minutes. The temperature of the solution was cooled to 70 ° C., and 6.333 g (12 mmol) of 6FDA was added. The reaction was performed for 30 minutes. Thus, a compound corresponding to N5 described in claim 2 was obtained.

【0069】さらに、メラミン1.512g(12mm
ol)を加え、100℃で10分、150℃で30分反
応させ、請求項2に記載されたN6に相当する化合物を
得た。次いで、6FDA10.67g(24mmol)
をメタクレゾール80g、イソキノリン0.1gととも
に加え70℃で30分、その後150℃で30分反応さ
せた。次いで液の温度を70℃に冷却して、TFMB
7.685g(24mmol)を加え、70℃で10
分、その後150℃で30分反応させ、溶液の温度を7
0℃に冷却し、6FDA10.67g(24mmol)
を加え、70℃で10分、150℃で30分反応させ
た。これにより、請求項2に記載されたN7に相当する
化合物を得た。
Further, 1.512 g of melamine (12 mm
ol) and reacted at 100 ° C. for 10 minutes and at 150 ° C. for 30 minutes to obtain a compound corresponding to N6 according to claim 2. Then, 10.67 g (24 mmol) of 6FDA
Was added together with 80 g of meta-cresol and 0.1 g of isoquinoline, and reacted at 70 ° C. for 30 minutes, and then at 150 ° C. for 30 minutes. Then, the temperature of the solution was cooled to 70 ° C.
7.685 g (24 mmol) were added, and 10
And then react at 150 ° C for 30 minutes.
Cool to 0 ° C. and 10.67 g (24 mmol) of 6FDA
And reacted at 70 ° C. for 10 minutes and at 150 ° C. for 30 minutes. As a result, a compound corresponding to N7 described in claim 2 was obtained.

【0070】さらに、メラミン3.024g(24mm
ol)を加え、100℃で10分、150℃で30分反
応させ、請求項2に記載されたN8に相当する化合物を
得た。次いで、BPDA14.12g(48mmol)
をメタクレゾール100g、イソキノリン0.2gとと
もに加え70℃で30分、その後150℃で1時間反応
させた。次いで液の温度を70℃に冷却して、TFMB
15.37g(48mmol)を加え、70℃で10
分、その後150℃で30分反応させ、溶液の温度を7
0℃に冷却し、6FDA21.33g(48mmol)
を加え、70℃で10分、200℃で30分反応させ
た。これにより、請求項2に記載されたN9に相当する
化合物を得た。この後、溶液の温度を70℃にして、末
端封止成分(Rmに相当)として3−アミノプロピルト
リエトキシシラン1.155g(5mmol)、4−エ
チニルアニリン1.404g(12mmol)、アニリ
ン2.883g(31mmol)を加え、120℃で3
0分反応させ、放射状に枝分かれしたポリイミド溶液を
合成した。
Further, 3.024 g of melamine (24 mm
ol) and reacted at 100 ° C. for 10 minutes and at 150 ° C. for 30 minutes to obtain a compound corresponding to N8 according to claim 2. Then 14.14 g (48 mmol) of BPDA
Was added together with 100 g of metacresol and 0.2 g of isoquinoline, followed by a reaction at 70 ° C. for 30 minutes and then at 150 ° C. for 1 hour. Then, the temperature of the solution was cooled to 70 ° C.
15.37 g (48 mmol) were added, and 10
And then react at 150 ° C for 30 minutes.
Cool to 0 ° C. and 21.33 g (48 mmol) of 6FDA
And reacted at 70 ° C. for 10 minutes and at 200 ° C. for 30 minutes. Thus, a compound corresponding to N9 described in claim 2 was obtained. Thereafter, the temperature of the solution was raised to 70 ° C., and 1.155 g (5 mmol) of 3-aminopropyltriethoxysilane, 1.404 g (12 mmol) of 4-ethynylaniline, and 2.14 g of aniline as terminal blocking components (corresponding to Rm). 883 g (31 mmol) was added,
The mixture was reacted for 0 minutes to synthesize a radially branched polyimide solution.

【0071】反応終了後、液の温度が30℃以下になっ
てから、反応液をメタノール5lに入れ、ポリマーを沈
殿させ、これをろ過により集めた。集めたポリマーは、
2回メタノールで洗浄して、風乾させた。このポリマー
を再びN−メチル−2−ピロリドン(NMP)100g
に溶解させ、メタノール30%含む水5lに入れ、ポリ
マーを沈殿させ、精製した。この沈殿したポリマーを集
めて、水で2回洗浄して、100℃で24時間真空乾燥
した(架橋モノマーの配合量:12.3モル%)。
After the completion of the reaction, when the temperature of the solution became 30 ° C. or less, the reaction solution was poured into 5 l of methanol to precipitate a polymer, which was collected by filtration. The collected polymer is
Washed twice with methanol and air dried. 100 g of N-methyl-2-pyrrolidone (NMP)
And precipitated in 5 l of water containing 30% methanol to precipitate the polymer. The precipitated polymer was collected, washed twice with water, and dried in vacuum at 100 ° C. for 24 hours (blending amount of crosslinking monomer: 12.3 mol%).

【0072】真空乾燥した試料3gをNMP30gに溶
解して、孔径1μmのテトラフルオロエチレン製フィル
ター(住友電工(株)製FP−100)でろ過し、測定
用の溶液を調整した。
3 g of the vacuum-dried sample was dissolved in 30 g of NMP and filtered through a 1 μm-pore-diameter filter made of tetrafluoroethylene (FP-100 manufactured by Sumitomo Electric Industries, Ltd.) to prepare a solution for measurement.

【0073】誘電率は2.28であり、比重は1.54
であった。比較例1と比べると比重は約7%減少してい
た。耐熱性は510℃であり良好であった。接着性は初
期、500時間後ともに問題なかった。
The dielectric constant is 2.28 and the specific gravity is 1.54
Met. The specific gravity was reduced by about 7% as compared with Comparative Example 1. The heat resistance was 510 ° C., which was good. There was no problem in the adhesion at the initial stage and after 500 hours.

【0074】比較例1 窒素気流下、500mlの4つ口フラスコに、TFMB
6.4g(20mmol)をメタクレゾール50g、イ
ソキノリン0.2gと共に入れ、70℃に加熱した。全
てが完全に溶解してから、6FDA8.88g(20m
mol)を加え70℃で30分、その後150℃で1時
間反応させ、次いで200℃で3時間反応を行い、直鎖
状のポリイミド溶液を得た(架橋モノマーの配合量:0
モル%)。反応終了後、実施例2と同様に上記ポリイミ
ド溶液を用いて測定用溶液を調製した。
Comparative Example 1 TFMB was placed in a 500 ml four-necked flask under a nitrogen stream.
6.4 g (20 mmol) was added together with 50 g of meta-cresol and 0.2 g of isoquinoline, and heated to 70 ° C. After all are completely dissolved, 6.88 g of 6FDA (20 m
mol) and reacted at 70 ° C. for 30 minutes, then at 150 ° C. for 1 hour, and then at 200 ° C. for 3 hours to obtain a linear polyimide solution (blending amount of crosslinking monomer: 0).
Mol%). After completion of the reaction, a measurement solution was prepared using the above polyimide solution in the same manner as in Example 2.

【0075】誘電率は2.81であり、比重は1.66
であった。接着性は初期の時点から問題があり、基板よ
り剥離が生じた。耐熱性は520℃であった。
The dielectric constant is 2.81 and the specific gravity is 1.66.
Met. Adhesion had a problem from the initial stage, and peeled off from the substrate. Heat resistance was 520 ° C.

【0076】実施例3 枝分かれ成分としてトリス(4−アミノフェニル)アミ
ン(TMPA)0.290g(1mmol)をNMP1
0gに溶解させる。ここにBPDA0.883g(3m
mol)を加え、室温で30分攪拌した。ここに、3,
3’−ジメトキシ−4,4’−ジアミノビフェニル(D
MOB)0.732g3mmolをNMP5gとともに
加えた。BPDA0.883g(3mmol)を加えた
後、TMPA0.870g(3mmol)を加えて、室
温で30分攪拌した。
Example 3 0.290 g (1 mmol) of tris (4-aminophenyl) amine (TMPA) as a branching component was added to NMP1.
Dissolve in 0 g. 0.883g of BPDA (3m
mol), and the mixture was stirred at room temperature for 30 minutes. Where 3,
3'-dimethoxy-4,4'-diaminobiphenyl (D
(MOB) 0.732 g 3 mmol was added along with NMP 5 g. After adding 0.883 g (3 mmol) of BPDA, 0.870 g (3 mmol) of TMPA was added, followed by stirring at room temperature for 30 minutes.

【0077】続いて、BPDA1.765g(6mmo
l)を加え、DMOB1.464g(6mmol)をN
MP10gとともに加えた後、30分攪拌した。その
後、BPDA1.765g(6mmol)を加え、TM
PA1.740g(6mmol)を加え、室温で30分
攪拌した。
Subsequently, 1.765 g (6 mmo) of BPDA
l), and 1.464 g (6 mmol) of DMOB was added to N
After being added together with 10 g of MP, the mixture was stirred for 30 minutes. Thereafter, 1.765 g (6 mmol) of BPDA was added, and TM was added.
1.740 g (6 mmol) of PA was added, and the mixture was stirred at room temperature for 30 minutes.

【0078】BPDA3.530g(12mmol)を
加え、TMOB2.928g(12mmol)をNMP
30gとともに加えた後、室温で1時間攪拌した。さら
に、BPDA3.530g(12mmol)をNMP1
0gとともに加え、TMPA3.480g(12mmo
l)を加え、室温で1時間攪拌した。
3.530 g (12 mmol) of BPDA was added, and 2.928 g (12 mmol) of TMOB was added to NMP.
After being added together with 30 g, the mixture was stirred at room temperature for 1 hour. Further, 3.530 g (12 mmol) of BPDA was added to NMP1
0g and TMPA 3.480g (12mmo
l) was added and the mixture was stirred at room temperature for 1 hour.

【0079】その後、BPDA7.061g(24mm
ol)を加え、TFMB7.680g(24mmol)
をNMP30gとともに加え、室温で1時間攪拌した。
ついでBPDA7.061g(24mmol)をNMP
10gとともに加え、TMPA6.960g(24mm
ol)を加え、室温で1時間攪拌した。
Thereafter, 7.061 g of BPDA (24 mm
ol) and 7.680 g (24 mmol) of TFMB
Was added together with 30 g of NMP, and the mixture was stirred at room temperature for 1 hour.
Then, 7.061 g (24 mmol) of BPDA was added to NMP.
6.960 g of TMPA (24 mm
ol) and stirred at room temperature for 1 hour.

【0080】その後、BPDA14.12g(48mm
ol)、TFMB15.36g(48mmol)を加
え、室温で1時間攪拌した。その後、さらにTFMB1
5.36g(48mmol)、BPDA14.12g
(48mmol)をNMP50gとともに加え、室温で
2時間攪拌した。その後、無水マレイン酸0.980g
(10mmol)、無水フタル酸5.624g(38m
mol)を加え、40℃で2時間攪拌した。この溶液
に、無水トリフルオロ酢酸39.06g(186mmo
l)をNMP100gとともに加え、室温で10時間攪
拌し、イソイミド化した。
Thereafter, 14.12 g of BPDA (48 mm
ol) and 15.36 g (48 mmol) of TFMB, and the mixture was stirred at room temperature for 1 hour. After that, TFMB1
5.36 g (48 mmol), BPDA 14.12 g
(48 mmol) was added together with 50 g of NMP, and the mixture was stirred at room temperature for 2 hours. Then, 0.980 g of maleic anhydride
(10 mmol), 5.624 g of phthalic anhydride (38 m
mol), and the mixture was stirred at 40 ° C for 2 hours. To this solution was added 39.06 g (186 mmol) of trifluoroacetic anhydride.
l) was added together with 100 g of NMP, and the mixture was stirred at room temperature for 10 hours to perform isoimidization.

【0081】このポリマー溶液を水10lに投入して、
放射状に枝分かれしたイソイミド構造を有したポリマー
粉体を得た(架橋モノマーの配合量:10.9モル
%)。
This polymer solution was put into 10 l of water,
A polymer powder having a radially branched isoimide structure was obtained (the blending amount of the crosslinking monomer: 10.9 mol%).

【0082】この粉体を80℃で20時間真空乾燥し
た。真空乾燥させたポリマーを3gジメチルイミダゾリ
ン30gに溶解させて、孔径が1μmのポリテトラフル
オロエチレン製メンブレンフィルター(住友電工(株)
製、FP−100)でろ過した溶液を評価に用いた。
This powder was vacuum dried at 80 ° C. for 20 hours. 3 g of the polymer dried in vacuum is dissolved in 30 g of dimethylimidazoline, and a polytetrafluoroethylene membrane filter having a pore diameter of 1 μm (Sumitomo Electric Industries, Ltd.)
FP-100) was used for evaluation.

【0083】誘電率は2.34、比重は1.53、耐熱
性は510℃であった。接着性はPCT接着試験100
時間まで問題がなかった。
The dielectric constant was 2.34, the specific gravity was 1.53, and the heat resistance was 510 ° C. Adhesion is PCT adhesion test 100
There was no problem until time.

【0084】実施例4 3,3’,4,4’−テトラアミノビフェニル(TA
B)0.214g(1mmol)、3,3’−ジヒドロ
キシ−4,4’−ジアミノビフェニル(HAB)0.8
64g(4mmol)とピリジン0.632g(8mm
ol)をDMAc10gに溶解させ、−10℃に冷却し
た。ここにテレフタル酸クロリド(TPC)0.812
g(4mmol)を ガンマブチロラクトン(GBL)
10gに溶解させた溶液を内温が0℃を越えないように
徐々に滴下した。この溶液を−10℃で30分攪拌した
後、TAB0.856g(4mmol)をDMAc20
g、ピリジン0.632g(8mmol)とともに加え
た。この溶液にTPC0.812g(4mmol)をG
BL10gに溶解させた溶液を内温が0℃を越えないよ
うに滴下した。滴下終了後30分攪拌した。HAB2.
592g(12mmol)、ピリジン1.896g(2
4mmol)、DMAc40gを加えた。ここにTPC
2.436g(12mmol)をGBL20gに溶解さ
せた溶液を内温が0℃を越えないように徐々に滴下し
た。この溶液を−10℃で30分攪拌した。
Example 4 3,3 ′, 4,4′-Tetraaminobiphenyl (TA
B) 0.214 g (1 mmol), 3,3′-dihydroxy-4,4′-diaminobiphenyl (HAB) 0.8
64 g (4 mmol) and pyridine 0.632 g (8 mm
ol) was dissolved in 10 g of DMAc and cooled to -10 ° C. Here, terephthalic acid chloride (TPC) 0.812
g (4 mmol) gamma-butyrolactone (GBL)
A solution dissolved in 10 g was gradually added dropwise so that the internal temperature did not exceed 0 ° C. After stirring this solution at −10 ° C. for 30 minutes, 0.856 g (4 mmol) of TAB was added to DMAc20.
g, pyridine 0.632 g (8 mmol). 0.812 g (4 mmol) of TPC was added to this solution in G
A solution dissolved in 10 g of BL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred for 30 minutes. HAB2.
592 g (12 mmol), pyridine 1.896 g (2
4 mmol) and 40 g of DMAc. Here TPC
A solution of 2.436 g (12 mmol) dissolved in 20 g of GBL was gradually added dropwise so that the internal temperature did not exceed 0 ° C. This solution was stirred at −10 ° C. for 30 minutes.

【0085】その後、TAB2.568g(12mmo
l)DMAc70g、ピリジン1.896g(24mm
ol)とともに加えた。この溶液にTPC2.436g
(12mmol)をGBL30gに溶解させた溶液を内
温が0℃を越えないように滴下した。滴下終了後、30
分攪拌した。HAB7.776g(36mmol)、ピ
リジン5.688g(72mmol)、DMAc100
gを加えた。ここにTPC7.308g(36mmo
l)をGBL70gに溶解させた溶液を内温が0℃を越
えないように徐々に滴下した。この溶液を−10℃で3
0分攪拌した。この後、BAHF13.18g(36m
mol)とピリジン5.688g(72mmol)をD
MAc80gとともに加えた。ここにTPC7.308
g(36mmol)をGBL70gに溶解させた溶液を
内温が0℃を越えないように徐々に滴下した。この溶液
を−10℃で30分攪拌した。その後、溶液の温度を3
0℃まで上昇させ、無水マレイン酸0.980g(10
mmol)、無水フタル酸2.960g(20mmo
l)、2−トリメトキシシリル無水フタル酸1.608
g(6mmol)を加え、30℃で2時間攪拌した。攪
拌終了後、ろ過で沈殿物を除き、ろ液をそのまま評価に
用いた(架橋モノマーの配合量:6.9モル%)。
Thereafter, 2.568 g of TAB (12 mm
l) 70 g of DMAc, 1.896 g of pyridine (24 mm
ol). 2.436 g of TPC was added to this solution.
(12 mmol) dissolved in 30 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After dropping, 30
Minutes. 7.776 g (36 mmol) of HAB, 5.688 g (72 mmol) of pyridine, DMAc100
g was added. Here, TPC 7.308g (36mmo
A solution of l) dissolved in 70 g of GBL was gradually added dropwise so that the internal temperature did not exceed 0 ° C. This solution was cooled at -10 ° C for 3 hours.
Stirred for 0 minutes. Thereafter, BAHF 13.18 g (36 m
mol) and 5.688 g (72 mmol) of pyridine in D
Added with 80 g of MAc. Here TPC 7.308
g (36 mmol) dissolved in 70 g of GBL was gradually added dropwise so that the internal temperature did not exceed 0 ° C. This solution was stirred at −10 ° C. for 30 minutes. Thereafter, the temperature of the solution was reduced to 3
0 ° C. and 0.980 g of maleic anhydride (10
mmol), 2.960 g of phthalic anhydride (20 mmol
l), 2-trimethoxysilyl phthalic anhydride 1.608
g (6 mmol) was added, and the mixture was stirred at 30 ° C. for 2 hours. After completion of the stirring, the precipitate was removed by filtration, and the filtrate was used for the evaluation as it was (the blending amount of the crosslinking monomer: 6.9 mol%).

【0086】誘電率は2.41、比重は1.55、耐熱
性は480℃であった。接着性は初期、500時間後と
もに問題がなかった。
The dielectric constant was 2.41, the specific gravity was 1.55, and the heat resistance was 480 ° C. Adhesion did not have any problem at the beginning and after 500 hours.

【0087】実施例5 TFMB0.960g(3mmol)、TEA0.30
3g(3mmol)をNMP15gに溶解させ、−10
℃に冷却した。ここにトリメシン酸クロリド(TMC)
0.2655g(1mmol)をGBL10gに溶解さ
せた溶液を内温が0℃を越えないように徐々に滴下し
た。
Example 5 0.960 g (3 mmol) of TFMB, TEA 0.30
3 g (3 mmol) was dissolved in 15 g of NMP, and -10
Cooled to ° C. Here trimesic acid chloride (TMC)
A solution prepared by dissolving 0.2655 g (1 mmol) in 10 g of GBL was gradually added dropwise so that the internal temperature did not exceed 0 ° C.

【0088】滴下終了後、溶液の温度を30℃にしてB
PDA0.8826g(3mmol)を加えた。その
後、TFMB0.960g(3mmol)を加えて、3
0℃で1時間攪拌した。
After the dropwise addition, the temperature of the solution was raised to 30 ° C.
0.8826 g (3 mmol) of PDA was added. Thereafter, 0.960 g (3 mmol) of TFMB was added, and 3
Stirred at 0 ° C. for 1 hour.

【0089】TFMB1.920g(6mmol)、T
EA0.909g(9mmol)をNMP20gととも
に加え、再度溶液を−10℃に冷却して、TMC0.7
965g(3mmol)をGBL15gに溶解させた溶
液を内温が0℃を越えないように徐々に滴下した。
1.920 g (6 mmol) of TFMB, T
0.909 g (9 mmol) of EA was added together with 20 g of NMP, and the solution was cooled again to −10 ° C.
A solution obtained by dissolving 965 g (3 mmol) in 15 g of GBL was gradually added dropwise so that the internal temperature did not exceed 0 ° C.

【0090】滴下終了後、溶液の温度を30℃にして、
PMDA1.309g(6mmol)を加え、さらに
3,3’−ジメトキシベンチジン(TLD)1.464
g(6mmol)を加えて、30℃で1時間攪拌した。
TLD2.928g(12mmol)、TEA1.81
8g(18mmol)をNMP20gとともに加え、再
度溶液を−10℃に冷却して、TMC1.593g(6
mmol)をGBL25gに溶解させた溶液を内温が0
℃を越えないように徐々に滴下した。
After the completion of the dropwise addition, the temperature of the solution was raised to 30 ° C.
1.309 g (6 mmol) of PMDA was added, and further, 3,3′-dimethoxybenzidine (TLD) 1.464.
g (6 mmol) was added and the mixture was stirred at 30 ° C. for 1 hour.
2.928 g (12 mmol) of TLD, 1.81 of TEA
8 g (18 mmol) was added together with 20 g of NMP, and the solution was cooled again to -10 ° C, and 1.593 g of TMC (6
(mmol) in 25 g of GBL.
The solution was gradually dropped so as not to exceed ° C.

【0091】滴下終了後、溶液の温度を30℃にして、
PMDA2.617g(12mmol)を加え、さらに
TLD2.928g(12mmol)を加えて、30℃
で1時間攪拌した。終了後、無水フタル酸0.740g
(5mmol)、無水ナジック酸1.640g(10m
mol)を加えて、50℃で1時間攪拌した(架橋モノ
マーの配合量:13.2モル%)。
After the completion of the dropwise addition, the temperature of the solution was raised to 30 ° C.
2.617 g (12 mmol) of PMDA was added, and 2.928 g (12 mmol) of TLD was further added.
For 1 hour. After the completion, 0.740 g of phthalic anhydride
(5 mmol), 1.640 g of nadic anhydride (10 m
mol), and the mixture was stirred at 50 ° C. for 1 hour (blending amount of crosslinking monomer: 13.2 mol%).

【0092】この誘電率は2.45、比重は1.58、
耐熱性は520℃であった。接着性はPCT接着試験2
00時間後まで問題がなかった。
The dielectric constant is 2.45, the specific gravity is 1.58,
Heat resistance was 520 ° C. Adhesion is PCT adhesion test 2
There was no problem until after 00 hours.

【0093】実施例6 トリ(4−アミノフェニル)メタン(TAM)0.28
9g(1mmol)をNMP15gに溶解させた。無水
ピロメリット酸(PMDA)0.6534g(3mmo
l)を加え、10分後、TFMB0.960g(3mm
ol)を加えて30℃で1時間攪拌した。
Example 6 Tri (4-aminophenyl) methane (TAM) 0.28
9 g (1 mmol) was dissolved in 15 g of NMP. 0.6534 g (3 mmo) of pyromellitic anhydride (PMDA)
l), and after 10 minutes, 0.960 g of TFMB (3 mm
ol) and stirred at 30 ° C. for 1 hour.

【0094】続いて、TAM0.867g(3mmo
l)をNMP10gとともに加え、BPDA0.882
6g(3mmol)を加えた。30℃で1時間攪拌し
た。
Subsequently, 0.867 g of TAM (3 mmo)
l) was added along with 10 g of NMP and BPDA 0.882
6 g (3 mmol) were added. Stirred at 30 ° C. for 1 hour.

【0095】その後、TFMB1.920g(6mmo
l)をNMP10gとともに加え、BPDA1.765
g(6mmol)を加えて、30℃で1時間攪拌した。
続いて、TAM1.734g(6mmol)をNMP1
5gとともに加え、BPDA1.765g(6mmo
l)を加えて、30℃で1時間攪拌した。
Thereafter, 1.920 g of TFMB (6 mmo
l) was added along with 10 g of NMP and BPDA 1.765
g (6 mmol) was added and the mixture was stirred at 30 ° C. for 1 hour.
Subsequently, 1.734 g (6 mmol) of TAM was added to NMP1.
5.765 g of BPDA (6 mmo)
l) was added and the mixture was stirred at 30 ° C for 1 hour.

【0096】その後、TFMB3.840g(12mm
ol)をNMP45gとともに加え、BPDA3.53
1g(12mmol)を加えて、30℃で1時間攪拌し
た。続いて、TAM3.468g(12mmol)をN
MP50gとともに加え、BPDA3.531g(12
mmol)を加えた。30℃で1時間攪拌した。
Thereafter, 3.840 g of TFMB (12 mm
ol) was added along with 45 g of NMP, and BPDA 3.53 was added.
1 g (12 mmol) was added, and the mixture was stirred at 30 ° C. for 1 hour. Subsequently, 3.468 g (12 mmol) of TAM was added to N
MP50g and BPDA 3.531g (12
mmol). Stirred at 30 ° C. for 1 hour.

【0097】その後、TFMB7.680g(24mm
ol)をNMP50gとともに加え、PMDA5.23
5g(24mmol)を加えて、30℃で1時間攪拌し
た。続いて、TAM6.936g(24mmol)をN
MP80gとともに加え、3,3’,4,4’−ベンゾ
フェノンテトラカルボン酸二無水物7.728g(24
mmol)を加えて、30℃で1時間攪拌した。その
後、TFMB15.36g(48mmol)をNMP1
00gとともに加え、BPDA14.12g(48mm
ol)を加えて、30℃で1時間攪拌した。
Thereafter, 7.680 g of TFMB (24 mm
ol) along with 50 g of NMP and 5.23 PMDA
5 g (24 mmol) was added, and the mixture was stirred at 30 ° C. for 1 hour. Subsequently, 6.936 g (24 mmol) of TAM was added to N
MP was added together with 80 g, and 7.728 g of 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride (24 g) was added.
mmol) and stirred at 30 ° C. for 1 hour. Thereafter, 15.36 g (48 mmol) of TFMB was added to NMP1.
14.12 g of BPDA (48 mm
ol) and stirred at 30 ° C. for 1 hour.

【0098】最後に3−アミノプロピルトリエトキシシ
ラン3.315g(15mmol)とアニリン3.06
9g(33mmol)を加え、30℃で1時間攪拌した
後、50℃で1時間攪拌した(架橋モノマーの配合量:
14.2モル%)。
Finally, 3.315 g (15 mmol) of 3-aminopropyltriethoxysilane and 3.06 of aniline were added.
9 g (33 mmol) was added, and the mixture was stirred at 30 ° C. for 1 hour, and then stirred at 50 ° C. for 1 hour (blending amount of crosslinking monomer:
14.2 mol%).

【0099】この誘電率は2.45、比重は1.58、
耐熱性は510℃であった。接着性は初期、500時間
後ともに良好であった。
The dielectric constant is 2.45, the specific gravity is 1.58,
Heat resistance was 510 ° C. The adhesion was good both at the beginning and after 500 hours.

【0100】実施例7 合成例3で作成したトリ(4−アミノフェニル)アミン
(TAPA)0.290g(1mmol)をNMP30
gに溶解させる。ここに、3,3’−ジヒドロキシ−
4,4’−ジアミノビフェニル(HAB)0.648g
(3mmol)とグリシジルメチルエーテル(GME)
3.168g(36mmol)を加えて溶液を−10℃
に冷却した。ここに、テレフタル酸クロリド(TPC)
0.609g(3mmol)をGBL8gに溶解させた
溶液を内温が0℃を越えないように滴下した。
Example 7 0.290 g (1 mmol) of tri (4-aminophenyl) amine (TAPA) prepared in Synthesis Example 3 was added to NMP30.
Dissolve in g. Here, 3,3′-dihydroxy-
0.648 g of 4,4'-diaminobiphenyl (HAB)
(3 mmol) and glycidyl methyl ether (GME)
3.168 g (36 mmol) were added and the solution was cooled to -10 ° C.
And cooled. Here, terephthalic acid chloride (TPC)
A solution in which 0.609 g (3 mmol) of GBL was dissolved in 8 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C.

【0101】滴下終了後、−10℃で30分攪拌した。
続いて、TAPA0.870g(3mmol)とGME
3.168g(36mmol)をNMP15gとともに
加えた。ここに、TPC0.609g(3mmol)を
GBL8gに溶解させた溶液を内温が0℃を越えないよ
うに滴下した。滴下終了後−10℃で1時間攪拌した。
ついでHAB1.296g(6mmol)、GME6.
336g(72mmol)をNMP25gとともに加え
た。ここに、TPC1.218g(6mmol)をGB
L15gに溶解させた溶液を内温が0℃を越えないよう
に滴下した。滴下終了後−10℃で30分攪拌した。
After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.
Subsequently, 0.870 g (3 mmol) of TAPA and GME
3.168 g (36 mmol) were added along with 15 g of NMP. A solution in which 0.609 g (3 mmol) of TPC was dissolved in 8 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred at -10 ° C for 1 hour.
Then, 1.296 g (6 mmol) of HAB, GME6.
336 g (72 mmol) were added along with 25 g of NMP. Here, 1.218 g (6 mmol) of TPC was added to GB
A solution dissolved in 15 g of L was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.

【0102】続いて、TAPA1.740g(6mmo
l)とGME6.336g(72mmol)をNMP3
0gとともに加えた。ここに、TPC1.218g(6
mmol)をGBL15gに溶解させた溶液を内温が0
℃を越えないように滴下した。滴下終了後−10℃で1
時間攪拌した。
Subsequently, 1.740 g of TAPA (6 mmo
l) and 6.336 g (72 mmol) of GME in NMP3
Added with 0 g. Here, 1.218 g of TPC (6
(mmol) in 15 g of GBL.
The solution was dropped so as not to exceed ° C. After completion of dropping, it is 1
Stirred for hours.

【0103】さらにビス(3−アミノ−4−ヒドロキシ
フェニル)ヘキサフルオロプロパン(BAHF)4.3
92g(12mmol)とGME12.67g(144
mmol)をNMP40gとともに加えた。ここに、T
PC2.436g(12mmol)をGBL30gに溶
解させた溶液を内温が0℃を越えないように滴下した。
滴下終了後−10℃で30分攪拌した。
Further, bis (3-amino-4-hydroxyphenyl) hexafluoropropane (BAHF) 4.3
92 g (12 mmol) and GME 12.67 g (144
mmol) along with 40 g of NMP. Where T
A solution prepared by dissolving 2.436 g (12 mmol) of PC in 30 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C.
After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.

【0104】続いて、TAPA3.480g(12mm
ol)とGME12.67g(144mmol)をNM
P50gとともに加えた。ここに、TPC2.436g
(12mmol)をGBL30gに溶解させた溶液を内
温が0℃を越えないように滴下した。滴下終了後−10
℃で30分攪拌した。ついでHAB5.184g(24
mmol)、GME25.3g(288mmol)をN
MP70gとともに加えた。ここに、TPC4.872
g(24mmol)をGBL50gに溶解させた溶液を
内温が0℃を越えないように滴下した。滴下終了後−1
0℃で1時間攪拌した。
Subsequently, 3.480 g of TAPA (12 mm
ol) and 12.67 g (144 mmol) of GME in NM
Added with P50g. Here, 2.436 g of TPC
(12 mmol) dissolved in 30 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. -10 after completion of dropping
Stirred at 30 ° C for 30 minutes. Then 5.184 g of HAB (24
mmol), 25.3 g (288 mmol) of GME
Added with 70 g of MP. Here, TPC4.872
g (24 mmol) dissolved in 50 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After dropping -1
Stirred at 0 ° C. for 1 hour.

【0105】続いて、TAPA6.960g(24mm
ol)とGME25.3g(288mmol)をNMP
100gとともに加えた。ここに、TPC4.872g
(24mmol)をGBL50gに溶解させた溶液を内
温が0℃を越えないように滴下した。滴下終了後−10
℃で1時間攪拌した。ついでHAB10.37g(48
mmol)、GME33.79g(384mmol)を
加えた。ここに、TPC9.744g(48mmol)
をGBL80gに溶解させた溶液を内温が0℃を越えな
いように滴下した。滴下終了後−10℃で30分攪拌し
た。
Subsequently, 6.960 g of TAPA (24 mm
ol) and 25.3 g (288 mmol) of GME in NMP
Added with 100 g. Here, TPC 4.872 g
(24 mmol) dissolved in 50 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. -10 after completion of dropping
Stirred at C for 1 hour. Then, HAB 10.37 g (48
mmol) and 33.79 g (384 mmol) of GME. Here, 9.744 g (48 mmol) of TPC
Was dissolved in 80 g of GBL, and the solution was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.

【0106】続いて、4−エチニルアニリン2.808
g(24mmol)、3−アミノプロピルトリエトキシ
シラン2.210g(10mmol)、アニリン1.3
02g(14mmol)とGME33.79gg(38
4mmol)をNMP40gとともに加えた。こきにイ
ソフタル酸クロリド(IPC)9.744g(48mm
ol)をGBL50gに溶解させた溶液を内温が0℃を
越えないように徐々に滴下した。滴下終了後、−10℃
で1時間、その後室温にまで徐々に温度を上昇させて2
時間攪拌した(架橋モノマーの配合量:12.3モル
%)。
Subsequently, 4-ethynylaniline 2.808
g (24 mmol), 2.210 g (10 mmol) of 3-aminopropyltriethoxysilane, 1.3 aniline
02g (14 mmol) and GME 33.79 gg (38
4 mmol) was added along with 40 g of NMP. 9.744 g of isophthalic acid chloride (IPC) (48 mm
ol) in 50 g of GBL was gradually added dropwise so that the internal temperature did not exceed 0 ° C. After dropping, -10 ° C
For 1 hour, and then gradually raise the temperature to room temperature for 2 hours.
The mixture was stirred for a period of time (the amount of the crosslinking monomer: 12.3 mol%).

【0107】このポリマー溶液を孔径1μmのポリテト
ラフルオロエチレン製メンブレンフィルターでろ過した
ものを試料とした。
A sample obtained by filtering this polymer solution with a polytetrafluoroethylene membrane filter having a pore size of 1 μm was used.

【0108】誘電率は2.33、比重は1.55、耐熱
性は478℃であった。接着性は初期、500時間後と
もに問題なかった。
The dielectric constant was 2.33, the specific gravity was 1.55, and the heat resistance was 478 ° C. There was no problem in the adhesion at the initial stage and after 500 hours.

【0109】実施例8 TFMB0.960g(3mmol)をNMP15g、
ピリジン0.237g(3mmol)に溶解させ、−1
0℃に冷却した。この溶液にトリメシン酸クロリド(T
MC)0.265g(1mmol)をGBL5gに溶解
させた溶液を滴下した。滴下終了後、−10℃で30分
攪拌した。
Example 8 0.960 g (3 mmol) of TFMB was added to 15 g of NMP,
Dissolved in 0.237 g (3 mmol) of pyridine,
Cooled to 0 ° C. To this solution is added trimesic acid chloride (T
A solution in which 0.265 g (1 mmol) of MC) was dissolved in 5 g of GBL was added dropwise. After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.

【0110】その後、溶液温度を30℃にまで徐々に上
昇させ、TFMB0.960g(3mmol)を加え、
さらにBPDA0.883g(3mmol)をNMP5
gともに加えて30℃で1時間攪拌した。その後、TF
MB1.920g(6mmol)、ピリジン0.711
g(9mmol)を加えて、溶液温度を−10℃に冷却
した。この溶液に、TMC0.796g(3mmol)
をGBL10gに溶解させ液を内温が0℃を越えないよ
うに滴下した。滴下終了後、溶液の温度を30℃にまで
徐々に上昇させ、TFMB1.920g(6mmo
l)、BPDA1.765g(6mmol)をNMP2
0gともに加えて、30℃で1時間攪拌した。
Thereafter, the temperature of the solution was gradually raised to 30 ° C., and 0.960 g (3 mmol) of TFMB was added.
Further, 0.883 g (3 mmol) of BPDA was added to NMP5
g together and stirred at 30 ° C. for 1 hour. Then, TF
MB 1.920 g (6 mmol), pyridine 0.711
g (9 mmol) was added and the solution temperature was cooled to -10 ° C. 0.796 g (3 mmol) of TMC was added to this solution.
Was dissolved in 10 g of GBL, and the solution was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the temperature of the solution was gradually increased to 30 ° C., and 1.920 g of TFMB (6 mm
l), 1.765 g (6 mmol) of BPDA was added to NMP2
0 g together, and the mixture was stirred at 30 ° C. for 1 hour.

【0111】続いて合成例1で合成した架橋剤4.78
8g(6mmol)、BPDA5.296g(18mm
ol)をNMP20gとともに加えて、30℃で15分
攪拌し、さらにTFMB7.680g(12mmol)
を加えた。無水フタル酸1.036g(7mmol)無
水マレイン酸0.490g(5mmol)を加え、50
℃で2時間攪拌した。その後、無水トリフルオロ酢酸
9.66g(46mmol)をNMP30gと共に加え
て、30℃で3時間攪拌し、その後一晩放置し、水5l
に投入してイソイミド構造になったポリマー組成物の沈
殿を得た。これを80℃で20時間真空乾燥した(架橋
モノマーの配合量:12.3モル%)。
Subsequently, the crosslinking agent 4.78 synthesized in Synthesis Example 1 was used.
8 g (6 mmol), 5.296 g of BPDA (18 mm
ol) was added together with 20 g of NMP and stirred at 30 ° C. for 15 minutes, and 7.680 g (12 mmol) of TFMB was further added.
Was added. 1.036 g (7 mmol) of phthalic anhydride and 0.490 g (5 mmol) of maleic anhydride were added, and 50
Stirred at C for 2 hours. Thereafter, 9.66 g (46 mmol) of trifluoroacetic anhydride was added together with 30 g of NMP, and the mixture was stirred at 30 ° C. for 3 hours, and then left overnight, and 5 l of water was added.
And a precipitate of a polymer composition having an isoimide structure was obtained. This was vacuum-dried at 80 ° C. for 20 hours (blending amount of crosslinking monomer: 12.3 mol%).

【0112】誘電率は2.44、比重は1.58、耐熱
性は470℃であった。接着性はPCT接着試験100
時間後まで問題なかった。
The dielectric constant was 2.44, the specific gravity was 1.58, and the heat resistance was 470 ° C. Adhesion is PCT adhesion test 100
No problem until hours later.

【0113】実施例9 HAB0.648g(3mmol)をDMAC20gに
溶解させる。グリシジルメチルエーテル(GME)1.
584g(18mmol)を加えて−10℃に冷却す
る。ここにTMC0.265g(1mmol)をGBL
5gに溶解させた溶液を徐々に滴下した。滴下終了後、
そのまま30分攪拌を続けた。さらに、HAB0.64
8g(3mmol)、GME1.584g(18mmo
l)をDMAc10gとともに加えた。この溶液に、T
PC0.609g(3mmol)をGBL5gに溶解さ
せた溶液を滴下した。滴下終了後、1時間攪拌した。
Example 9 HAB (0.648 g, 3 mmol) is dissolved in DMAC (20 g). Glycidyl methyl ether (GME)
Add 584 g (18 mmol) and cool to -10 ° C. Here, 0.265 g (1 mmol) of TMC was added to GBL
A solution dissolved in 5 g was gradually added dropwise. After dropping,
Stirring was continued for 30 minutes. Further, HAB 0.64
8 g (3 mmol), 1.584 g of GME (18 mmo
l) was added along with 10 g of DMAc. This solution contains T
A solution in which 0.609 g (3 mmol) of PC was dissolved in 5 g of GBL was added dropwise. After completion of the dropwise addition, the mixture was stirred for 1 hour.

【0114】その後、HAB1.296g(6mmo
l)、GME4.752g(54mmol)をDMAc
30gとともに加えた。この溶液にTMC0.796g
(3mmol)をGBL8gに溶解させた溶液を内温が
0℃を越えないように滴下した。滴下終了後、1時間攪
拌した。さらに、HAB1.296g(6mmol)、
GME6.336g(72mmol)をDMAc30g
とともに加えた。この溶液にTPC1.593g(6m
mol)をGBL10gに溶解させた液を内温が0℃を
越えないように滴下した。
Thereafter, 1.296 g of HAB (6 mm
l), 4.752 g (54 mmol) of GME was added to DMAc
Added with 30 g. 0.796 g of TMC is added to this solution.
(3 mmol) dissolved in 8 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred for 1 hour. Further, 1.296 g (6 mmol) of HAB,
6.336 g (72 mmol) of GME was added to 30 g of DMAc.
Added with. 1.593 g of TPC (6 m
(mol) in 10 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C.

【0115】ついでHAB2.592g(12mmo
l)、GME9.504g(108mmol)をDMA
c40gとともに加えた。ここに、TMC1.593g
(6mmol)をGBL15gに溶解させた溶液を滴下
した。滴下終了後、1時間攪拌した。その後、HAB
5.184g(12mmol)、GME9.504g
(108mmol)をDMAc60gとともに加えた。
ここにTPC2.436g(12mmol)をGBL1
5gに溶解させた溶液を内温が0℃を越えないように滴
下した。滴下終了後1時間攪拌した。
Then, HAB 2.592 g (12 mmo)
l), 9.504 g (108 mmol) of GME in DMA
Added with 40 g of c. Here, 1.593 g of TMC
A solution of (6 mmol) dissolved in 15 g of GBL was added dropwise. After completion of the dropwise addition, the mixture was stirred for 1 hour. After that, HAB
5.184 g (12 mmol), 9.504 g of GME
(108 mmol) was added along with 60 g of DMAc.
Here, 2.436 g (12 mmol) of TPC was added to GBL1.
A solution dissolved in 5 g was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred for 1 hour.

【0116】HAB5.184g(24mmol)、G
ME19.01g(216mmol)をDMAc60g
とともに加えた。ここに、TMC3.186g(12m
mol)をGBL30gに溶解させた溶液を滴下した。
滴下終了後、1時間攪拌した。その後、HAB5.18
4g(24mmol)、GME12.67g(144m
mol)をDMAc80gとともに加えた。ここにTP
C4.872g(24mmol)をGBL35gに溶解
させた溶液を内温が0℃を越えないように滴下した。
5.184 g (24 mmol) of HAB, G
19.01 g (216 mmol) of ME was added to 60 g of DMAc.
Added with. Here, 3.186 g of TMC (12 m
mol) was dissolved in 30 g of GBL.
After completion of the dropwise addition, the mixture was stirred for 1 hour. Then, HAB 5.18
4 g (24 mmol), GME 12.67 g (144 m
mol) was added along with 80 g of DMAc. Here TP
A solution in which 4.872 g (24 mmol) of C was dissolved in 35 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C.

【0117】この溶液に安息香酸クロリド1.355g
(10mmol)をGBL10gに溶解した溶液を滴下
した。1時間攪拌した後、温度を30℃にまで上昇さ
せ、無水マレイン酸0.980g(10mmol)、4
−トリメトキシシリル−無水フタル酸1.072g(4
mmol)を加え、30℃で2時間攪拌した(架橋モノ
マーの配合量:14.0モル%)。
To this solution was added 1.355 g of benzoic acid chloride.
A solution of (10 mmol) dissolved in 10 g of GBL was added dropwise. After stirring for 1 hour, the temperature was raised to 30 ° C. and 0.980 g (10 mmol) of maleic anhydride was added.
1.072 g of trimethoxysilyl-phthalic anhydride (4
mmol), and the mixture was stirred at 30 ° C. for 2 hours (blending amount of crosslinking monomer: 14.0 mol%).

【0118】誘電率は2.31、比重は1.52、耐熱
性は490℃であった。接着性は初期、500時間後と
もに問題なかった。
The dielectric constant was 2.31, the specific gravity was 1.52, and the heat resistance was 490 ° C. There was no problem in the adhesion at the initial stage and after 500 hours.

【0119】実施例10 3,3’−ジチオヒドロキシ−4,4’−ジアミノビフ
ェニル(SAB)0.744g(3mmol)をジメチ
ルアセトアミド(DMAC)30gに溶解させる。ピリ
ジン0.237g(3mmol)を加えて−10℃に冷
却する。ここにTMC0.265g(1mmol)をG
BL8gに溶解させた溶液を徐々に滴下した。滴下終了
後、そのまま30分攪拌を続けた。さらに、SAB0.
744g(3mmol)、ピリジン0.474g(6m
mol)をDMAc20gとともに加えた。
Example 10 0.744 g (3 mmol) of 3,3'-dithiohydroxy-4,4'-diaminobiphenyl (SAB) is dissolved in 30 g of dimethylacetamide (DMAC). Add 0.237 g (3 mmol) of pyridine and cool to -10 ° C. Here, 0.265 g (1 mmol) of TMC was added to G
A solution dissolved in 8 g of BL was gradually dropped. After completion of the dropwise addition, stirring was continued for 30 minutes. Furthermore, SAB0.
744 g (3 mmol), pyridine 0.474 g (6 m
mol) was added along with 20 g of DMAc.

【0120】この溶液に、TPC0.609g(3mm
ol)をGBL10gに溶解させた溶液を滴下した。滴
下終了後、30分攪拌した。ついでSAB1.488g
(6mmol)、ピリジン0.711g(9mmol)
をDMAc30gとともに加えた。ここに、TMC0.
796g(3mmol)をGBL10gに溶解させた溶
液を内温が0℃を越えないように滴下した。滴下終了
後、30分攪拌を行った。
To this solution was added 0.609 g of TPC (3 mm
ol) in 10 g of GBL was added dropwise. After the completion of the dropwise addition, the mixture was stirred for 30 minutes. Then SAB 1.488g
(6 mmol), 0.711 g (9 mmol) of pyridine
Was added along with 30 g of DMAc. Here, TMC0.
A solution of 796 g (3 mmol) dissolved in 10 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, stirring was performed for 30 minutes.

【0121】SAB1.488g(6mmol)、ピリ
ジン0.948g(12mmol)をDMAc30gと
ともに加えた。この溶液にTPC1.218g(6mm
ol)をGBL15gに溶解させた溶液を内温が0℃を
越えないように滴下した。滴下終了後、30分攪拌を続
けた。ついでSAB2.976g(12mmol)、ピ
リジン2.844g(36mmol)をDMAc50g
とともに加えた。この溶液にTMC1.593g(6m
mol)をGBL20gに溶解させた溶液を内温が0℃
を越えないように滴下した。滴下終了後、そのまま30
分攪拌を続けた。
1.488 g (6 mmol) of SAB and 0.948 g (12 mmol) of pyridine were added together with 30 g of DMAc. 1.218 g of TPC (6 mm
ol) in 15 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, stirring was continued for 30 minutes. Then, 2.976 g (12 mmol) of SAB and 2.844 g (36 mmol) of pyridine were added to 50 g of DMAc.
Added with. 1.593 g of TMC (6 m
mol) was dissolved in 20 g of GBL.
It was dropped so as not to exceed. After dropping is complete, leave
Stirring was continued for minutes.

【0122】SAB2.976g(12mmol)、ピ
リジン1.896g(24mmol)をDMAc35g
とともに加えた。この溶液にTPC2.436g(12
mmol)をGBL25gに溶解させた溶液を内温が0
℃を越えないように滴下した。滴下終了後、30分攪拌
を続けた。ついでSAB5.952g(24mmo
l)、ピリジン0.711g(36mmol)をDMA
c70gとともに加えた。ここに、TMC3.186g
(12mmol)をGBL40gに溶解させた溶液を内
温が0℃を越えないように滴下した。滴下終了後、30
分攪拌を行った。
2.976 g (12 mmol) of SAB and 1.896 g (24 mmol) of pyridine were added to 35 g of DMAc.
Added with. 2.436 g of TPC (12
(mmol) in 25 g of GBL.
The solution was dropped so as not to exceed ° C. After completion of the dropwise addition, stirring was continued for 30 minutes. Then, 5.952 g of SAB (24 mmo
l), 0.711 g (36 mmol) of pyridine in DMA
Added with 70 g of c. Here, 3.186 g of TMC
(12 mmol) dissolved in 40 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After dropping, 30
For a minute.

【0123】SAB5.952g(24mmol)、ピ
リジン3.792g(48mmol)をDMAc70g
とともに加えた。この溶液にTPC4.872g(24
mmol)をGBL55gに溶解させた溶液を内温が0
℃を越えないように滴下した。滴下終了後、30分攪拌
を続けた。ついでSAB11.90g(48mmo
l)、ピリジン5.688g(72mmol)をDMA
c120gとともに加えた。この溶液にTMC1.59
3g(24mmol)をGBL20gに溶解させた溶液
を内温が0℃を越えないように滴下した。滴下終了後、
そのまま30分攪拌を続けた。
5.952 g (24 mmol) of SAB and 3.792 g (48 mmol) of pyridine were added to 70 g of DMAc.
Added with. 4.872 g of TPC (24
(mmol) in 55 g of GBL.
The solution was dropped so as not to exceed ° C. After completion of the dropwise addition, stirring was continued for 30 minutes. Then SAB 11.90g (48mmo
l), 5.688 g (72 mmol) of pyridine in DMA
c was added together with 120 g. TMC 1.59 was added to this solution.
A solution of 3 g (24 mmol) dissolved in 20 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After dropping,
Stirring was continued for 30 minutes.

【0124】SAB11.90g(48mmol)、ピ
リジン7.584g(96mmol)をDMAc120
gとともに加えた。この溶液にTPC9.744g(4
8mmol)をGBL100gに溶解させた溶液を内温
が0℃を越えないように滴下した。滴下終了後、1時間
攪拌を続けた。ついでSAB23.81g(96mmo
l)、ピリジン11.38g(144mmol)をDM
Ac250gとともに加えた。ここに、TMC12.7
4g(48mmol)をGBL150gに溶解させた溶
液を内温が0℃を越えないように滴下した。滴下終了
後、30分攪拌を行った。
11.90 g (48 mmol) of SAB and 7.584 g (96 mmol) of pyridine were added to DMAc120.
g. 9.744 g of TPC (4.
(8 mmol) dissolved in 100 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After dropping, stirring was continued for 1 hour. Then SAB 23.81 g (96 mmo
l), 11.38 g (144 mmol) of pyridine were added to DM
Ac was added with 250 g of Ac. Here, TMC12.7
A solution of 4 g (48 mmol) dissolved in 150 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, stirring was performed for 30 minutes.

【0125】SAB23.81g(96mmol)、ピ
リジン15.17g(192mmol)をDMAc25
0gとともに加えた。この溶液にTPC19.49g
(96mmol)をGBL200gに溶解させた溶液を
内温が0℃を越えないように滴下した。滴下終了後、1
時間分攪拌を続けた。
23.81 g (96 mmol) of SAB and 15.17 g (192 mmol) of pyridine were added to DMAc25.
Added with 0 g. 19.49 g of TPC was added to this solution.
(96 mmol) dissolved in 200 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After dropping, 1
Stirring was continued for hours.

【0126】この溶液に安息香酸クロリド8.430g
(60mmol)をシクロヘキサノン20gに溶解した
溶液を滴下した。滴下終了後1時間攪拌を続けた。
To this solution was added 8.430 g of benzoic acid chloride.
(60 mmol) dissolved in 20 g of cyclohexanone was added dropwise. After completion of the dropping, stirring was continued for 1 hour.

【0127】溶液の温度を30℃にして、3,3’,
4,4’−ジフェニルエーテルテトラカルボン酸二無水
物11.16g(36mmol)を加えた。10分後に
3−アミノプロピルトリエトキシシラン2.210g
(10mmol)、4−エチニルアニリン1.170g
(10mmol)、アニリン1.488g(16mmo
l)を加えて40℃で2時間攪拌した。攪拌終了後、沈
殿物をろ過で除いた溶液を再度孔径1μmのポリテトラ
フルオロエチレン製(住友電工(株)製)のメンブレン
フィルターでろ過したを評価に用いた(架橋モノマーの
配合量:11.8モル%)。
The temperature of the solution was raised to 30 ° C.
11.16 g (36 mmol) of 4,4'-diphenylethertetracarboxylic dianhydride was added. After 10 minutes, 2.210 g of 3-aminopropyltriethoxysilane
(10 mmol), 1.170 g of 4-ethynylaniline
(10 mmol), 1.488 g (16 mmol) of aniline
l) was added and the mixture was stirred at 40 ° C for 2 hours. After completion of the stirring, the solution from which the precipitate was removed by filtration was filtered again through a membrane filter made of polytetrafluoroethylene having a pore diameter of 1 μm (manufactured by Sumitomo Electric Industries, Ltd.). 8 mol%).

【0128】誘電率は2.29、比重は1.61、耐熱
性は470℃であった。接着性は初期、500時間後と
もに問題がなかった。
The dielectric constant was 2.29, the specific gravity was 1.61, and the heat resistance was 470 ° C. Adhesion did not have any problem at the beginning and after 500 hours.

【0129】実施例11 合成例1で合成した架橋モノマー(1)0.399g
(1mmol)、イソキノリン0.1gをメタクレゾー
ル30gに溶解させた。ここにBPDA0.883g
(3mmol)を加え、150℃で1時間反応させた。
この溶液を50℃にまで冷却して、TFMB0.960
g(3mmol)、BPDA0.883g(3mmo
l)とイソキノリン0.2gをメタクレゾール10gと
ともに加え、70℃で15分、その後150℃で1時間
反応させた。これにより、請求項2に記載されたN1に
相当する化合物を得た。
Example 11 0.399 g of the crosslinked monomer (1) synthesized in Synthesis Example 1
(1 mmol) and 0.1 g of isoquinoline were dissolved in 30 g of meta-cresol. 0.883 g of BPDA here
(3 mmol) was added and reacted at 150 ° C. for 1 hour.
The solution was cooled to 50 ° C. and TFMB 0.960
g (3 mmol), 0.883 g of BPDA (3 mmol
l) and 0.2 g of isoquinoline were added together with 10 g of meta-cresol, and reacted at 70 ° C. for 15 minutes and then at 150 ° C. for 1 hour. Thus, a compound corresponding to N1 described in claim 2 was obtained.

【0130】再び、溶液を50℃に冷却して、架橋モノ
マー(1)1.198g(3mmol)を加え、50℃
で30分、150℃で30分反応させた。これにより、
請求項2に記載されたN2に相当する化合物を得た。そ
の後、溶液を50℃に冷却して、BPDA3.530g
(12mmol)とTFMB1.920g(6mmo
l)とイソキノリン0.2gをメタクレゾール50gと
ともに加え、70℃で15分反応させ、150℃で1時
間反応させた。これにより、請求項2に記載されたN3
に相当する化合物を得た。
Again, the solution was cooled to 50 ° C., and 1.198 g (3 mmol) of the crosslinking monomer (1) was added.
For 30 minutes and at 150 ° C. for 30 minutes. This allows
A compound corresponding to N2 described in claim 2 was obtained. Thereafter, the solution was cooled to 50 ° C. and 3.530 g of BPDA was obtained.
(12 mmol) and 1.920 g (6 mmol) of TFMB
l) and 0.2 g of isoquinoline were added together with 50 g of meta-cresol, reacted at 70 ° C. for 15 minutes, and reacted at 150 ° C. for 1 hour. Thereby, the N3 described in claim 2
A compound corresponding to was obtained.

【0131】さらに、溶液を50℃に冷却して架橋モノ
マー(1)2.395g(6mmol)を加え、70℃
で15分反応後、150℃で1時間反応させた。これに
より、請求項2に記載されたN4に相当する化合物を得
た。続いて溶液を50℃に冷却して6FDA10.66
7g(24mmol)、TFMB3.84g(12mm
ol)とイソキノリン0.2gをメタクレゾール100
gとともに加え、70℃で15分、続いて、150℃で
2時間反応させた。これにより、請求項2に記載された
N5に相当する化合物を得た。
Further, the solution was cooled to 50 ° C., and 2.395 g (6 mmol) of the crosslinking monomer (1) was added.
And then reacted at 150 ° C. for 1 hour. Thus, a compound corresponding to N4 described in claim 2 was obtained. Subsequently, the solution was cooled to 50 ° C. and 6FDA 10.66
7 g (24 mmol), 3.84 g TFMB (12 mm
ol) and 0.2 g of isoquinoline
g, and reacted at 70 ° C. for 15 minutes, then at 150 ° C. for 2 hours. Thus, a compound corresponding to N5 described in claim 2 was obtained.

【0132】さらに、溶液を50℃に冷却して架橋モノ
マー(1)4.790g(12mmol)を加え、50
℃で15分反応させた。これにより、請求項2に記載さ
れたN6に相当する化合物を得た。6FDA21.31
g(48mmol)とTFMB7.680g(24mm
ol)とイソキノリン0.5gをメタクレゾール150
gとともに加え、70℃で15分、続いて、200℃で
2時間反応させた。これにより、請求項2に記載された
N7に相当する化合物を得た。この後、溶液を100℃
に冷却して末端封止成分(Rm)として3−アミノプロ
ピルトリエトキシシラン2.656g(12mmo
l)、アニリン1.116g(12mmol)を1時間
反応させて、末端にケイ素原子を有した放射状枝分かれ
ポリイミド溶液を得た(架橋モノマーの配合量:12.
5モル%)。
Further, the solution was cooled to 50 ° C., and 4.790 g (12 mmol) of the crosslinking monomer (1) was added.
Reaction was carried out at 15 ° C. for 15 minutes. As a result, a compound corresponding to N6 described in claim 2 was obtained. 6FDA 21.31
g (48 mmol) and 7.680 g of TFMB (24 mm
ol) and 0.5 g of isoquinoline
g, and reacted at 70 ° C. for 15 minutes, then at 200 ° C. for 2 hours. As a result, a compound corresponding to N7 described in claim 2 was obtained. After this, the solution is brought to 100 ° C.
And cooled to 2.656 g (12 mmo) of 3-aminopropyltriethoxysilane as a terminal blocking component (Rm).
l) and 1.116 g (12 mmol) of aniline were reacted for 1 hour to obtain a radially branched polyimide solution having a silicon atom at the terminal (blending amount of crosslinking monomer: 12.1).
5 mol%).

【0133】反応終了後、実施例2と同様に上記ポリイ
ミド溶液を用いて測定用溶液を調製した。
After completion of the reaction, a measurement solution was prepared in the same manner as in Example 2 using the above polyimide solution.

【0134】誘電率は2.15であり、比重は1.48
であった。比較例1と比べると比重は約11%減少して
いた。耐熱性は480℃であった。接着性は初期、50
0時間後ともに問題なかった。
The dielectric constant is 2.15 and the specific gravity is 1.48.
Met. The specific gravity was reduced by about 11% as compared with Comparative Example 1. Heat resistance was 480 ° C. Adhesion is initial, 50
There was no problem after 0 hours.

【0135】実施例12 枝分かれ成分としてTMC0.265g(1mmol)
をGBL5gに溶解させた溶液をHAB0.648g
(3mmol)をDMAc30g、ピリジン0.237
g(3mmol)に溶解させ、−15℃にした溶液に滴
下した。この後、HAB0.674g(3mmol)、
ピリジン0.474g(6mmol)、DMAc10g
を加えた。この溶液にTPC0.609g(3mmo
l)をGBL8gに溶解させた溶液を滴下した。さらに
ピリジン0.711g(9mmol)、BAHF2.1
96g(6mmol)、DMAc20gを加えた。これ
により、請求項2に記載されたN1に相当する化合物を
得た。
Example 12 0.265 g (1 mmol) of TMC as a branched component
Was dissolved in 5 g of GBL, and 0.648 g of HAB was added.
(3 mmol) in 30 g of DMAc and 0.237 in pyridine
g (3 mmol) and added dropwise to the solution at −15 ° C. After this, HAB 0.674 g (3 mmol),
0.474 g (6 mmol) of pyridine, 10 g of DMAc
Was added. 0.609 g of TPC (3 mmo) was added to this solution.
A solution of l) dissolved in 8 g of GBL was added dropwise. Further, 0.711 g (9 mmol) of pyridine, BAHF2.1
96 g (6 mmol) and 20 g of DMAc were added. Thus, a compound corresponding to N1 described in claim 2 was obtained.

【0136】この溶液にTMC0.796g(3mmo
l)をGBL10gに溶解させた溶液を滴下した。これ
により、請求項2に記載されたN2に相当する化合物を
得た。滴下終了後、DMAc30g、ピリジン0.47
4g(6mmol)、BAHF2.196g(6mmo
l)を加えた。この後、TPC1.218g(6mmo
l)をGBL15gに溶解させた溶液を滴下した。さら
にピリジン1.422g(18mmol)、BAHF
4.392g(12mmol)をDMAc50gととも
に加えた。これにより、請求項2に記載されたN3に相
当する化合物を得た。ここに、TMC1.593g(6
mmol)をGBL20gに溶解させた溶液を滴下し
た。これにより、請求項2に記載されたN4に相当する
化合物を得た。滴下終了後、DMAc50g、ピリジン
0.948g(12ミリモル)、HAB2.592g
(12mmol)を加えた。この後、TPC2.436
g(12mmol)をGBL30gに溶解させた溶液を
滴下した。これにより、請求項2に記載されたN5に相
当する化合物を得た。ここに、末端封止成分(Rm)と
して無水マレイン酸1.176g(12mmol)を加
えて、20℃で3時間攪拌した。これにより、放射状枝
分かれポリヒドロキシアミドを得た。攪拌終了後、ろ過
して沈殿を除いた溶液を水2lに投入し、ポリマーの粉
体を得た。このポリマーを水で洗浄してから、100℃
の真空乾燥機で20時間乾燥させた。真空乾燥した試料
3gをNMP30gに溶解して、孔径1μmのテトラフ
ルオロエチレン製フィルター(住友電工(株)製FP−
100)でろ過し、測定用の溶液を調整した(架橋モノ
マーの配合量11.8モル%)。
In this solution, 0.796 g (3 mmo) of TMC was added.
A solution of l) dissolved in 10 g of GBL was added dropwise. Thus, a compound corresponding to N2 described in claim 2 was obtained. After completion of the dropwise addition, 30 g of DMAc and 0.47 of pyridine were used.
4g (6mmol), BAHF 2.196g (6mmo
l) was added. Thereafter, 1.218 g of TPC (6 mmo
A solution of l) dissolved in 15 g of GBL was added dropwise. Further, 1.422 g (18 mmol) of pyridine and BAHF
4.392 g (12 mmol) were added along with 50 g of DMAc. As a result, a compound corresponding to N3 described in claim 2 was obtained. Here, 1.593 g of TMC (6
(mmol) in 20 g of GBL was added dropwise. Thus, a compound corresponding to N4 described in claim 2 was obtained. After completion of the dropwise addition, 50 g of DMAc, 0.948 g (12 mmol) of pyridine, 2.592 g of HAB
(12 mmol) was added. After this, TPC 2.436
g (12 mmol) dissolved in 30 g of GBL was added dropwise. Thus, a compound corresponding to N5 described in claim 2 was obtained. Here, 1.176 g (12 mmol) of maleic anhydride was added as a terminal blocking component (Rm), and the mixture was stirred at 20 ° C. for 3 hours. Thus, radially branched polyhydroxyamide was obtained. After completion of the stirring, the solution from which the precipitate was removed by filtration was poured into 2 l of water to obtain a polymer powder. After washing the polymer with water,
For 20 hours. 3 g of a vacuum-dried sample was dissolved in 30 g of NMP, and a filter made of tetrafluoroethylene having a pore diameter of 1 μm (FP- manufactured by Sumitomo Electric Industries, Ltd.)
100) to prepare a solution for measurement (11.8 mol% of the crosslinking monomer).

【0137】誘電率は2.35であり、比重は1.51
であった。耐熱性は460℃であった。接着性はPCT
接着試験50時間後まで問題なかった。
The dielectric constant is 2.35 and the specific gravity is 1.51
Met. The heat resistance was 460 ° C. Adhesion is PCT
There was no problem until 50 hours after the adhesion test.

【0138】比較例2 TFMB29.76g(93mmol)、メラミン5.
802g(46mmol)とイソキノリン0.5gをm
−クレゾール1000gに溶解させた。6FDA82.
66g(186mmol)をm−クレゾール64gとも
に加え、50℃で30分攪拌の後、150℃に溶液の温
度を上昇させたところ、系がゲル化した(架橋モノマー
の配合量:14.1モル%)。
Comparative Example 2 29.76 g (93 mmol) of TFMB, melamine5.
802 g (46 mmol) and 0.5 g of isoquinoline
-Dissolved in 1000 g of cresol. 6FDA82.
66 g (186 mmol) of m-cresol were added together with 64 g, and after stirring at 50 ° C. for 30 minutes, the temperature of the solution was raised to 150 ° C., and the system gelled (the blending amount of the crosslinking monomer: 14.1 mol%). ).

【0139】実施例13 合成例2で合成した枝分かれモノマーをメラミンの代わ
りに使用した以外は、全て実施例2と同様な反応を行っ
た。
Example 13 The same reaction as in Example 2 was carried out except that the branched monomer synthesized in Synthesis Example 2 was used instead of melamine.

【0140】誘電率は2.18であり、比重は1.52
であった。比較例1と比べると比重は約8%減少してい
た。耐熱性は470℃であり良好であった。接着性は初
期、500時間後ともに問題なかった。
The dielectric constant is 2.18 and the specific gravity is 1.52
Met. The specific gravity was reduced by about 8% as compared with Comparative Example 1. The heat resistance was 470 ° C., which was good. There was no problem in the adhesion at the initial stage and after 500 hours.

【0141】実施例14 TFMB0.960g(3mmol)をDMAc30
g、TEA0.303g(3mmol)に溶解させ、−
10℃に冷却した。ここに、TMC0.265g(1m
mol)をGBL5gに溶解させた溶液を系の温度が0
℃を越えないように滴下した。滴下後、−10℃で30
分攪拌した。続いて、TFMB1.920g(6mmo
l)をDMAC30gとTEA0.909g(9mmo
l)とともに加えた。この溶液にTMC0.796g
(3mmol)をGBL10gに溶解させた溶液を内温
が0℃を越えないように滴下した。滴下後、−10℃で
30分攪拌した。
Example 14 0.960 g (3 mmol) of TFMB was added to DMAc30.
g, dissolved in 0.303 g (3 mmol) of TEA,
Cooled to 10 ° C. Here, TMC 0.265g (1m
mol) was dissolved in 5 g of GBL.
The solution was dropped so as not to exceed ° C. After dropping, it is 30
Minutes. Subsequently, 1.920 g of TFMB (6 mmo
l) was prepared by adding 30 g of DMAC and 0.909 g of TEA (9 mmo).
l). 0.796 g of TMC is added to this solution.
(3 mmol) dissolved in 10 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After the dropwise addition, the mixture was stirred at −10 ° C. for 30 minutes.

【0142】TFMB3.840g(12mmol)を
DMAc50gとTEA1.818g(18mmol)
とともに加えた。ここにTMC1.593g(6mmo
l)をGBL20gに溶解させた溶液を内温が0℃を越
えないように滴下した。滴下終了後、−10℃で30分
攪拌した。
3.840 g (12 mmol) of TFMB was added to 50 g of DMAc and 1.818 g (18 mmol) of TEA.
Added with. Here, 1.593 g of TMC (6 mmo
A solution of l) dissolved in 20 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.

【0143】TFMB7.680g(24mmol)を
DMAc100gとTEA3.636g(36mmo
l)とともに加えた。ここにTMC3.186g(12
mmol)をGBL35gに溶解させた溶液を内温が0
℃を越えないように滴下した。滴下終了後、−10℃で
30分攪拌した。
7.680 g (24 mmol) of TFMB was added to 100 g of DMAc and 3.636 g (36 mmol) of TEA.
l). Here, 3.186 g of TMC (12
(mmol) in 35 g of GBL.
The solution was dropped so as not to exceed ° C. After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.

【0144】TFMB12.80g(40mmol)と
1、3−ビス(3−アミノプロピルテトラメチルジシロ
キサン1.988g(8mmol)をDMAc150g
とTEA7.272g(72mmol)とともに加え
た。ここにTMC6.372g(24mmol)をGB
L60gに溶解させた溶液を内温が0℃を越えないよう
に滴下した。滴下終了後、−10℃で30分攪拌した。
その後、溶液の温度を室温にまで上昇させ、1時間攪拌
後、沈殿物をろ過で除いた(架橋モノマーの配合量:3
3.1モル%)。
TFMB (12.80 g, 40 mmol) and 1,988 g (8 mmol) of 1,3-bis (3-aminopropyltetramethyldisiloxane) were added to 150 g of DMAc.
And 7.272 g (72 mmol) of TEA. Here, 6.372 g (24 mmol) of TMC was added to GB
A solution dissolved in 60 g of L was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, the mixture was stirred at -10 ° C for 30 minutes.
Thereafter, the temperature of the solution was raised to room temperature, and after stirring for 1 hour, the precipitate was removed by filtration (blending amount of crosslinking monomer: 3).
3.1 mol%).

【0145】この誘電率は2.45であった。耐熱性は
550℃と良好であった。接着性は初期、500時間後
ともに問題なかった。
This dielectric constant was 2.45. The heat resistance was as good as 550 ° C. There was no problem in the adhesion at the initial stage and after 500 hours.

【0146】比較例3 TFMB0.960g(3mmol)をDMAc50g
とTEA0.303g(3mmol)に溶解させ、−1
0℃に冷却した。ここにTMC0.265g(1mmo
l)をGBL5gに溶解させた溶液を内温が0℃を越え
ないように滴下した。滴下終了後、30分攪拌を続け
た。
Comparative Example 3 0.960 g (3 mmol) of TFMB was added to 50 g of DMAc.
And 0.33 g (3 mmol) of TEA
Cooled to 0 ° C. Here, TMC 0.265g (1mmo
A solution of l) dissolved in 5 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, stirring was continued for 30 minutes.

【0147】TPE1.291g(6mmol)をDM
Ac50gとTEA0.909g(9mmol)ととも
に加えた。ここにTMC0.796g(3mmol)を
GBL10gに溶解させた溶液を内温が0℃を越えない
ように滴下した。滴下終了後、30分間攪拌を続けた。
1.291 g (6 mmol) of TPE was added to DM
Ac was added together with 50 g of Ac and 0.909 g (9 mmol) of TEA. A solution of 0.796 g (3 mmol) of TMC dissolved in 10 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, stirring was continued for 30 minutes.

【0148】TPE5.162g(24mmol)をD
MAc80gとTEA3.636g(36mmol)と
ともに加えた。ここにTMC3.186g(12mmo
l)をGBL40gに溶解させた溶液を内温が0℃を越
えないように滴下した。滴下終了後、30分間攪拌を続
けた。
5.162 g (24 mmol) of TPE was added to D
It was added together with 80 g of MAc and 3.636 g (36 mmol) of TEA. Here, 3.186 g of TMC (12 mmo
A solution of l) dissolved in 40 g of GBL was added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, stirring was continued for 30 minutes.

【0149】アニリン8.928g(96mmol)を
DMAc200gとTEA14.54g(144mmo
l)とともに加えた。ここにTMC12.74g(48
mmol)をGBL150gに溶解させた溶液を内温が
0℃を越えないように徐々に滴下した。滴下終了後、攪
拌を続けていると系内がゲル化した(架橋モノマーの配
合量:48.7モル%)
8.928 g (96 mmol) of aniline was added to 200 g of DMAc and 14.54 g (144 mmol) of TEA.
l). Here, TMC 12.74 g (48
(mmol) in 150 g of GBL was gradually added dropwise so that the internal temperature did not exceed 0 ° C. After completion of the dropwise addition, if the stirring was continued, the inside of the system gelled (the blending amount of the crosslinking monomer: 48.7 mol%).

【0150】[0150]

【発明の効果】本発明によると、誘電率が低く、かつ接
着性に優れた耐熱性樹脂膜を得ることができた。
According to the present invention, a heat-resistant resin film having a low dielectric constant and excellent adhesiveness can be obtained.

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成11年9月2日(1999.9.2)[Submission date] September 2, 1999 (1999.9.2)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0023[Correction target item name] 0023

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0023】[0023]

【化21】 (R 0、R2、・・R2nは3価から6価の有機基、ケイ素
原子含有基、R1、R3、・・R2n+1は2価の基、nは1
から100までの整数、r 0 は3から6までの整数、
2、・・r2nは2から5までの整数を表す。mは水素
原子、炭素数1から30までの1価の有機基を示す。) 本発明のポリマーは、枝分かれした構造をとることで、
ポリマー鎖がお互い近づかなくなるために、バルクポリ
マーの中でポリマー鎖の占める体積分率が低下する。こ
のような体積分率の小さいポリマーは体積分率の大きな
ポリマーより誘電率が低下する傾向にある。これは、絶
縁体の中で誘電率の最も小さいものは真空であり、次い
で空気であるためである。この体積分率は枝分かれポリ
マーと同じ構造を有した線状ポリマーの比重の比率より
見積もることができる。すなわち、単位体積あたりのポ
リマー重量である比重をそのポリマーの構造単位の分子
量で除し、単位体積あたりの分子の数の比で見積もれ
る。すなわち、比重が10%低下したポリマーは、空隙
率が10%増加したものを考えられる。
Embedded image (R 0 , R 2 ,... R 2n is a trivalent to hexavalent organic group, a silicon atom-containing group, R 1 , R 3 ,... R 2n + 1 is a divalent group, and n is 1
An integer from to 100, r 0 is an integer from 3 to 6,
r 2 ,... r 2n represents an integer of 2 to 5. R m is hydrogen
It represents an atom, a monovalent organic group having 1 to 30 carbon atoms. The polymer of the present invention has a branched structure,
Since the polymer chains do not approach each other, the volume fraction occupied by the polymer chains in the bulk polymer decreases. Such a polymer having a small volume fraction tends to have a lower dielectric constant than a polymer having a large volume fraction. This is because the lowest dielectric constant among insulators is vacuum, followed by air. This volume fraction can be estimated from the ratio of the specific gravity of the linear polymer having the same structure as the branched polymer. That is, the specific gravity, which is the weight of the polymer per unit volume, is divided by the molecular weight of the structural unit of the polymer, and can be estimated by the ratio of the number of molecules per unit volume. That is, a polymer having a specific gravity reduced by 10% is considered to have a porosity increased by 10%.

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0025[Correction target item name] 0025

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0025】本発明のポリマーの製造方法は、まず架橋
成分R0と枝成分R1を反応させ、オリゴマーN1を得
る。続いて架橋成分R2を反応させ、N2を得る。N3
と枝成分R3を反応させN4を得る。このような反応を
2n+1回繰り返すことで得られる。また、反応の最後
に1価の有機基を末端封止基として使用することもでき
る。一般式(21)において、Rmがこの部分に相当す
る。Rmが水素原子である場合、末端封止基はなく、炭
素数1以上30以下の1価の有機基である場合、この有
機基が末端封止基となる。このようなものとしては、ア
ニリン、プロピルアミンなどの1価のアミン化合物、無
水フタル酸、無水コハク酸などの1価の酸無水物などを
挙げることができる。さらに、熱による反応性のあるも
のを有した、エチニルアニリン、ビニルアニリンなどの
反応性の多重結合を有した1価のアミン化合物、無水マ
レイン酸、無水ナジック酸などの反応性の多重結合を有
した1価の酸無水物化合物などを挙げることができる。
また、アミノプロピルトリエトキシシラン、アミノフェ
ニルトリエトキシシランなどのケイ素原子含有アミノ化
合物、トリメトキシシリル無水フタル酸などのケイ素原
子含有酸無水物化合物を用いると基板との接着改良効果
もあり、さらに好ましい。これらの化合物は1種類のみ
で使用することもできるが、複数種を混合して使用して
も良い。このように逐次的に架橋成分と枝成分を交互に
反応させることで中心から放射状に広がったポリマーを
得ることができる。
In the method for producing a polymer of the present invention, first, a crosslinking component R 0 is reacted with a branch component R 1 to obtain an oligomer N1. Subsequently, the crosslinking component R 2 is reacted to obtain N 2. N3
Obtain N4 reacted branches component R 3 and. Such a reaction is obtained by repeating 2n + 1 times. At the end of the reaction, a monovalent organic group may be used as a terminal blocking group. In the general formula (21), R m corresponds to this portion
You. When R m is a hydrogen atom, there is no terminal blocking group,
In the case of a monovalent organic group having a prime number of 1 or more and 30 or less,
The functional group becomes a terminal blocking group. Examples of such compounds include monovalent amine compounds such as aniline and propylamine, and monovalent acid anhydrides such as phthalic anhydride and succinic anhydride. Furthermore, it has a reactive multiple bond such as a monovalent amine compound having a reactive multiple bond such as ethynylaniline and vinylaniline, and a reactive multiple bond such as maleic anhydride and nadic anhydride, which are reactive with heat. And the like.
In addition, aminopropyltriethoxysilane, a silicon atom-containing amino compound such as aminophenyltriethoxysilane, and a silicon atom-containing acid anhydride compound such as trimethoxysilyl phthalic anhydride have an effect of improving adhesion to a substrate, and are more preferable. . These compounds may be used alone, or a plurality of them may be used in combination. As described above, by sequentially reacting the cross-linking component and the branch component alternately, it is possible to obtain a polymer radially spread from the center.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H025 AA00 AA10 AA14 AB16 CB23 CB25 CB26 CC20 4J002 CL061 CL071 CQ001 EC006 EE026 EH006 EJ006 EL066 EL086 EL106 EP016 EU026 EV206 GQ01  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H025 AA00 AA10 AA14 AB16 CB23 CB25 CB26 CC20 4J002 CL061 CL071 CQ001 EC006 EE026 EH006 EJ006 EL066 EL086 EL106 EP016 EU026 EV206 GQ01

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】炭素数3から30の3価から4価の有機基
と一般式(1)から(9)で示される基の少なくとも1
種より構成されるポリマーを含み、炭素数3から30ま
での3価から4価の基のポリマー中の含量が、5から3
5モル%であることを特徴とする低誘電率重合体組成
物。 【化1】 (Q1、Q3は、少なくとも炭素原子を2個以上含む3価
から4価の有機基、Q2は少なくとも炭素原子を2個以
上含む2価の有機基、Q4、Q5は水素原子および/また
は炭素数1から10までの1価の有機基、pは1から1
00の整数、q、rは1または2を表す。) 【化2】 (Q6、Q8は少なくとも炭素原子を2個以上含む4価の
有機基、Q7は少なくとも炭素原子を2個以上含む2価
の有機基、sは0から100までの整数を表す。) 【化3】 (Q9、Q11は少なくとも炭素原子を2個以上含む4価
の有機基、Q10は少なくとも炭素原子を2個以上含む2
価の有機基、tは0から100までの整数を表す。) 【化4】 (Q12、Q14は、少なくとも炭素原子を2個以上含む2
から4価の有機基、Q13は少なくとも炭素原子を2個以
上含む3価から6価の有機基、Zは酸素原子、硫黄原
子、またはNHより選ばれる。uは1から100の整
数、v、wは1または2を表す。) 【化5】 (Q15、Q17は、少なくとも2個以上の炭素原子を含む
2価の有機基、Q16は、少なくとも2個以上の炭素原子
を含む4価の有機基、Zは酸素原子、硫黄原子、NHを
表しており、xは0から100までの整数を表す。) 【化6】 (Q19、Q21は少なくとも炭素原子を2個以上含む2価
の有機基、Q20は、少なくとも炭素原子を2個以上含む
3価から4価の有機基、Q22は水素原子および/または
炭素数1から10までの1価の有機基、yは1から10
0の整数、aは1または2を表す。) 【化7】 (Q23、Q25は少なくとも炭素原子を2個以上含む2価
の有機基、Q24は少なくとも炭素原子を2個以上含む4
価の有機基、bは0から100までの整数を表す。) 【化8】 (Q27、Q29は少なくとも炭素原子を2個以上含む3価
から6価の有機基、Q28は、少なくとも炭素原子を2個
以上含む2価の有機基、Zは酸素原子、硫黄原子、また
はNHより選ばれる。cは1から100の整数、d、e
は1または2を表す。) 【化9】 (Q30、Q32、Q34は、少なくとも2個以上の炭素原子
を含む4価の有機基、Q31、Q33は、少なくとも2個以
上の炭素原子を含む2価の有機基、Zは酸素原子、硫黄
原子、NHを表しており、fは0から100までの整数
を表す。)
1. A trivalent to tetravalent organic group having 3 to 30 carbon atoms and at least one of groups represented by general formulas (1) to (9).
Including a polymer composed of species, wherein the content of the trivalent to tetravalent group having 3 to 30 carbon atoms in the polymer is 5 to 3;
A low dielectric constant polymer composition characterized by being 5 mol%. Embedded image (Q 1 and Q 3 are trivalent to tetravalent organic groups containing at least two carbon atoms, Q 2 is a divalent organic group containing at least two carbon atoms, and Q 4 and Q 5 are hydrogen atoms And / or a monovalent organic group having 1 to 10 carbon atoms, p is 1 to 1
An integer of 00, q and r represent 1 or 2. ) (Q 6 and Q 8 are tetravalent organic groups containing at least two carbon atoms, Q 7 is a divalent organic group containing at least two carbon atoms, and s is an integer from 0 to 100.) Embedded image (Q 9 and Q 11 are tetravalent organic groups containing at least two carbon atoms, and Q 10 is a tetravalent organic group containing at least two carbon atoms.
A valent organic group, t represents an integer of 0 to 100; ) (Q 12 and Q 14 each have at least two carbon atoms.
To a tetravalent organic group, Q 13 is a trivalent to hexavalent organic group containing at least two carbon atoms, and Z is selected from an oxygen atom, a sulfur atom, or NH. u represents an integer of 1 to 100, and v and w represent 1 or 2. ) (Q 15 and Q 17 are a divalent organic group containing at least 2 or more carbon atoms, Q 16 is a tetravalent organic group containing at least 2 or more carbon atoms, Z is an oxygen atom, a sulfur atom, Represents NH, and x represents an integer from 0 to 100.) (Q 19 and Q 21 are divalent organic groups containing at least two carbon atoms, Q 20 is a trivalent to tetravalent organic group containing at least two carbon atoms, and Q 22 is a hydrogen atom and / or A monovalent organic group having 1 to 10 carbon atoms, y is 1 to 10
Integer of 0, a represents 1 or 2. ) (Q 23 and Q 25 are divalent organic groups containing at least two carbon atoms, and Q 24 is a divalent organic group containing at least two carbon atoms.
A valent organic group, b represents an integer from 0 to 100; ) (Q 27 and Q 29 are a trivalent to hexavalent organic group containing at least two carbon atoms, Q 28 is a divalent organic group containing at least two carbon atoms, Z is an oxygen atom, a sulfur atom, Or NH. C is an integer of 1 to 100, d, e
Represents 1 or 2. ) (Q 30 , Q 32 , Q 34 are tetravalent organic groups containing at least 2 or more carbon atoms, Q 31 , Q 33 are divalent organic groups containing at least 2 or more carbon atoms, Z is Represents an oxygen atom, a sulfur atom, and NH, and f represents an integer from 0 to 100.)
【請求項2】請求項1記載の枝分かれを有するポリマー
が (1)3から4価の架橋成分と一般式(1)から(9)
で示される基の少なくとも1種とを反応させN1を得る (2)N1と3から4価の架橋成分とを反応させ、N2
を得る (3)N2と一般式(1)から(9)で示される基の少
なくとも1種と反応させ、N3を得る (4)N3と3から4価の基を反応させ、N4を得る 以上のことを計2n+1回(nは0から100の整数)
繰り返し、逐次的に反応を行うことで得られることを特
徴とする請求項1記載の低誘電率重合体組成物。
2. The branched polymer according to claim 1, wherein (1) a trivalent to tetravalent crosslinking component and a compound represented by the general formulas (1) to (9).
Is reacted with at least one of the groups represented by the formula (1) to obtain N1. (2) The N1 is reacted with a trivalent to tetravalent crosslinking component to form N2.
(3) Reaction of N2 with at least one of the groups represented by formulas (1) to (9) to obtain N3 (4) Reaction of N3 with a trivalent group from 3 to obtain N4 2n + 1 times (n is an integer from 0 to 100)
The low dielectric constant polymer composition according to claim 1, which is obtained by performing a reaction repeatedly and sequentially.
【請求項3】請求項1記載のポリマーが有機溶媒に溶解
した状態であることを特徴とする低誘電率重合体組成
物。
3. A low dielectric constant polymer composition, wherein the polymer according to claim 1 is dissolved in an organic solvent.
【請求項4】請求項1記載のポリマーが溶融成形できる
ことを特徴とする低誘電率重合体組成物。
4. A low dielectric constant polymer composition, wherein the polymer according to claim 1 can be melt-molded.
【請求項5】真空に対する比誘電率が2.7以下である
ことを特徴とする請求項1記載の低誘電率重合体組成
物。
5. The low dielectric constant polymer composition according to claim 1, wherein the relative dielectric constant with respect to vacuum is 2.7 or less.
【請求項6】2n+1回の反応を繰り返した後、一般式
(10)で表される炭素数3から20までの1価の基を
反応させたことを特徴とする請求項1または2記載の低
誘電率重合体組成物。 【化10】 (Dは炭素数1から10までの1価の有機基、Jは炭素
数2以上30以下の2価の有機基を表している。)
6. The method according to claim 1, wherein after repeating the reaction 2n + 1 times, a monovalent group having 3 to 20 carbon atoms represented by the general formula (10) is reacted. Low dielectric constant polymer composition. Embedded image (D represents a monovalent organic group having 1 to 10 carbon atoms, and J represents a divalent organic group having 2 to 30 carbon atoms.)
JP24942998A 1998-09-03 1998-09-03 Polymer composition having low dielectric constant Pending JP2000080272A (en)

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US6903006B2 (en) 2000-03-17 2005-06-07 Matsushita Electric Industrial Co., Ltd. Interlayer dielectric film, and method for forming the same and interconnection
US7291919B2 (en) 2000-03-17 2007-11-06 Matsushita Electrical Industrial Co., Ltd. Interlayer dielectric film, and method for forming the same and interconnection
JP2001302598A (en) * 2000-04-27 2001-10-31 Inst Of Physical & Chemical Res Method for producing aromatic polyamine and aromatic diamine compound
JP4635162B2 (en) * 2000-04-27 2011-02-16 独立行政法人理化学研究所 Method for producing aromatic diamine and aromatic diamine compound
WO2002085616A1 (en) * 2001-04-19 2002-10-31 Nippon Steel Chemical Co., Ltd. Laminate for electronic material
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