JP2000077321A - Projection exposure method and projection aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of projection exposure and a projection aligner with a stable focus image which has a large depth of focus by compensating distortion in an image face, that is changed in each illumination mode shifted by an illumination-light deforming means or a distortion of the image face caused by an exposure environment or exposure history. SOLUTION: A reticle is illuminated by an illuminating system, and a pattern is formed on the reticle. Then, the pattern is transcribed by exposure on a photosensitive substrate by a projection optical system. In this case, when the distribution of the strength of light on a pupil face in the projection optical system is changed by an illumination-light deforming means, the reticle is deformed for each deformed state of illumination light through a reticle deforming means to compensate the distortion of the image face of the transcribed pattern.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure method and a projection exposure apparatus for projecting and exposing a circuit pattern on a reticle onto a photosensitive substrate through a projection optical system and transferring the same, and more particularly, to correcting image plane distortion of the projection optical system. The present invention relates to a projection exposure method and a projection exposure apparatus.

[0002]

2. Description of the Related Art In recent years, the minimum line width of an integrated circuit has reached the order of submicrons, and the demand for a resolution line width and overlay accuracy for a projection exposure apparatus has become increasingly severe. In order to respond to such demands, various technological innovations have been made in projection exposure technology from various aspects. For example, to improve the resolution, the numerical aperture of the projection lens has been increased and the wavelength used has been shortened, and various super-resolution techniques have been proposed and used.

[0003] Super-resolution techniques include mask (reticle) techniques such as halftone and Levenson type phase shift masks, variable σ values, modified illumination techniques such as annular illumination, oblique illumination and four-aperture illumination, and imaging systems. Pupil filter technology to control the pupil of the eye,
Further, there may be mentioned a combination technique thereof.

[0004] These technological innovations have made it possible to form diversified circuit pattern shapes with high resolution.

[0005] On the other hand, the improvement of the resolution performance has demanded a severe level of manufacturing technology and stability in the projection optical system.
As a result, there are issues such as how to correct errors caused by manufacturing tolerances, as well as improving manufacturing accuracy,
A great deal of effort has been made to compensate for the effects of exposure environments such as atmospheric pressure and temperature.

[0006]

One of the important imaging performances of the projection optical system is distortion of an image plane, particularly, curvature of field, and the image plane is curved and projected on a flat substrate. There are aberrations. If the curvature of field is large beyond the depth of focus, a part of the exposure area of one shot is transferred with blurring,
A uniform line width cannot be obtained over the entire exposure area, which is not preferable.
Originally, the field curvature is set to a sufficiently small value within an allowable range at the stage of designing the lens of the projection optical system, but the actual lens remains due to a manufacturing error, a change in exposure environment, a deflection of the reticle (mask) under its own weight, and the like. Field curvature occurs. The amount of the residual field curvature has become a non-negligible amount with the recent reduction in the resolution line width.

When correcting the curvature of field, it is necessary to correct the distortion of other optical systems without deteriorating, for example, spherical aberration, coma, distortion and the like. In the conventional projection optical system, correction is performed by slightly changing the pressure of the pressure chamber which is closed between the lens groups constituting the lens or between the lenses.
There are many problems, such as a complicated mechanism for charging the projection optical system itself and an increase in the number of steps required for correction.

In recent years, various super-resolution techniques have been used in combination as described above. Therefore, the projection optical system needs to exhibit an optimal aberration state even under the application of each super-resolution technique used. In particular, in the super-resolution technique based on the deformed illumination, the effective light source is different, so the area to be imaged in the pupil of the projection optical system changes for each illumination method (hereinafter, abbreviated as illumination mode), and the imaging performance is minute. There is a problem of change.

Since the curvature of field also changes minutely for each illumination mode, a mechanism for measuring and correcting the amount of curvature of field for each illumination mode is provided, or the curvature of field is optimized as a whole in consideration of all illumination modes. They look for the conditions and make corrections.

However, the former has a problem that the correction mechanism itself becomes complicated, and the latter cannot cope with a strict standard of the image plane width, and eventually cannot satisfy the standard of depth of focus.

Proposals for solving the problem of the field curvature correction include, for example, JP-A-5-326367, JP-A-8-95229, and JP-A-9-1677.
As disclosed in U.S. Pat. No. 36, the reticle shape is modified so that the curvature of field is corrected. Each of these prior arts has a fixed reticle shape corresponding to the projection optical system, and cannot respond dynamically to the change in the image plane due to the above-described illumination mode.

As another method, Japanese Patent Application Laid-Open No. 9-509543 discloses that
Techniques for correcting the image plane by controlling the temperature of fluorite in a projection optical system composed of quartz and fluorite have been disclosed, but the mechanism itself becomes complicated and there is also a problem with the time response because the temperature change is controlled. is there.

In view of the above, it is an object of the present invention to provide a projection exposure method and a projection exposure apparatus capable of correcting a field curvature in accordance with an illumination mode without complicating the mechanism. Further, the change in the image plane distortion between the illumination modes may include not only the field curvature but also the inclination of the image plane. SUMMARY OF THE INVENTION It is an object of the present invention to provide a projection exposure method and a projection exposure apparatus that can correct image plane distortion including field curvature and image plane tilt.

[0014]

In order to solve the above problems, in a projection exposure apparatus according to the present invention, an illumination system for illuminating a reticle, and a projection optical system for exposing and transferring a pattern formed on the reticle onto a photosensitive substrate. Illumination system, illumination light deforming means for deforming the intensity distribution of light formed on the pupil plane of the projection optical system by the illumination system, and an image generated by the projection optical system for each deformation state of the illumination light by the illumination light deformation means It is characterized by having reticle deformation means for distorting the reticle so as to cancel the surface distortion.

The projection exposure apparatus to which the present invention is applied is preferably applied to a scanning projection exposure apparatus. In a scanning projection exposure apparatus, the illumination light is slit-shaped on the reticle,
The reticle and the photosensitive substrate to be exposed are synchronously scanned in the short direction of the slit of the illumination light.

The reticle deformation means distorts the reticle in the longitudinal direction of the slit of the illumination light, and further corrects the magnification change of the projection optical system caused by the reticle deformation by the reticle deformation means, or the projection optical system. The projection optical system is characterized in that it has means for correcting other optical characteristics of the projection optical system caused by the occurrence of the image plane distortion.

In the projection exposure method according to the present invention, when the reticle is illuminated by the illumination system and the pattern formed on the reticle is exposed and transferred on the photosensitive substrate by the projection optical system, the illumination light built in the illumination system is deformed. When the intensity distribution of light formed on the pupil plane of the projection optical system is changed by the means, the reticle is distorted by the reticle deforming means for each deformation state of the illumination light to correct the image plane distortion of the transfer pattern. I have.

The projection exposure method of the present invention is suitably applied to a scanning projection exposure apparatus. In a scanning type projection exposure apparatus, illumination light has a slit shape on a reticle, and a reticle and a photosensitive substrate to be exposed are synchronously scanned in the short direction of the slit of the illumination light. It is a feature of the projection exposure method that the direction in which the reticle is deformed is made coincident with the longitudinal direction of the slit of the illumination light, and when the reticle is further deformed, the magnification change of the projection optical system due to the reticle deformation is corrected.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 illustrates the principle of operation of a projection exposure method and a projection exposure apparatus according to the present invention, and conceptually depicts an object plane, a projection optical system, and an image plane. Object plane o
Denotes a reticle on which a circuit pattern is drawn, and an object plane i corresponds to a position where a photosensitive substrate is placed. For example, a certain lighting mode a
The image plane 1 which forms a substantially flat surface under is an image plane 2 which is distorted with a curvature under another different illumination mode b, and
Further, in a different illumination mode c, the image plane 3 is distorted with inclination and curvature.

In order to correct the image plane distortion that changes for each illumination mode as described above, the present invention is characterized in that the object plane is deformed in a direction to cancel the image plane distortion, that is, the correction for deforming the reticle is performed. I have. For example, to correct the image plane 3 with tilt and curvature, the reticle must be
In addition to tilting it as o ', it is deformed so that it has a curvature in the direction opposite to the direction in which the curvature of the image plane occurs.

According to the present invention, since a photosensitive substrate can always be formed on a plane image plane regardless of the illumination mode, good imaging performance can always be ensured over the entire exposure area.

FIG. 2 shows a projection exposure apparatus according to the first embodiment of the present invention constructed on the basis of the concept described with reference to FIG. Light from a light source 11 illuminates a reticle 16 on which a circuit pattern is drawn via lenses 12 and 13 and a mirror 14 in the illumination system. Reticle 16 is held on reticle stage 15. The light transmitted and diffracted by the circuit pattern on the reticle 16 is exposed by the projection optical system 17 while being imaged on a photosensitive substrate 19 such as a silicon wafer placed on a photosensitive substrate stage 18 moving in the xyz directions. Is performed. When the exposure is completed, the photosensitive substrate stage 18 repeats the operation of stepping and moving to the next shot, and sequentially transfers the circuit pattern onto the photosensitive substrate.

In the illumination system, a deformation means 20 for deforming the intensity distribution of the illumination light is provided at a position conjugate with the pupil of the projection optical system 17, and a reticle deformation means 21 having a mechanism for deforming the reticle is provided on the reticle. Is a feature of the present invention.

The intensity distribution of the illumination light on the pupil plane of the projection optical system 17 is transformed by the illumination transformation means 20 as shown in FIGS. 3 (a), 3 (b) and 3 (c). The deformation of the intensity distribution is actually achieved by disposing a stop having the shape shown in FIG. 3 at a position corresponding to the brightness stop of the illumination system, that is, at a position conjugate with the pupil of the projection optical system 17. In the aperture shape of FIG. 3, a white portion corresponds to a portion that transmits light, and a black portion corresponds to a portion that does not transmit light.

In FIG. 3, FIG. 3 (a) shows a small σ illumination because light is transmitted only through the central portion of the pupil and the peripheral portion is shielded, and FIG. 3 (b) conversely shields the central portion of the pupil and removes the peripheral portion. In FIG. 3 (c), the pupil is divided into four parts, and only the circular regions which are symmetric with each other are transmitted. In the projection exposure, exposure is performed by appropriately selecting various illumination modes represented by the above depending on the shape and line width of the circuit pattern or process conditions, thereby improving resolution and depth of focus.

The present invention addresses the distortion of the image plane of the projection optical system, which changes minutely due to the various illumination modes described above.

The reticle deforming means 26 is provided for correcting and controlling a minute distortion of the image plane generated. The reticle deformation amount is calculated by the calculating means 21 so as to cancel out the image plane distortion amount by the selected illumination mode, and the driving of 26 is performed. Regarding the reticle deformation amount, an actually measured value of the relationship between the image plane distortion and the reticle deformation amount, which has been measured in advance, and data obtained by design simulation are used as a basic table.

The relationship between the illumination mode and the amount of change in the image plane distortion can be known based on a data table obtained by actual measurement or design simulation. By calculating using the amount of change and the basic table, it is possible to correct the image plane distortion. As another method, every time the illumination mode is changed, an image plane distortion measurement pattern (not shown) on the photosensitive substrate stage 18 is measured, and an operation is performed with reference to the measurement data and the basic table to perform image plane distortion. Can also be corrected.

Although the projection exposure method and the projection exposure apparatus of the present invention can be applied regardless of the type of projection exposure, the effects of the different exposure methods will be described below.

FIGS. 4A and 4B illustrate the differences depending on the exposure method. FIG. 4A shows a batch exposure, and FIG. 4B shows a scan exposure.
An exposure method for each shot is illustrated. In the batch exposure shown in FIG. 4A, the entire exposure area 23a on the reticle 16a is
Illumination is performed by the illumination light 22a from a, and the photosensitive substrate 19a is exposed at one time via the projection optical system 17a.

On the other hand, in the scan exposure shown in FIG.
Illumination light 22b from b illuminates reticle 16b in a slit shape. Exposure of the entire desired exposure area 23b indicated by the dotted line is performed by moving each of the stages on which the reticle 16b and the photosensitive substrate 19b are mounted in the direction opposite to the arrow at a speed ratio corresponding to the projection magnification of the projection optical system. This is performed by synchronous scanning (scanning). Because the effect of scanning makes it possible to expand the exposure area of the projection optical system in the scanning direction, that is, in the short direction of the slit, scan exposure has recently attracted attention as an exposure method suitable for increasing the resolution and expanding the exposure area. .

FIG. 5 schematically shows the distortion of the image plane generated in one shot for exposure. In FIG. 5, for simplicity, it is assumed that there is no tilt and defocus of the image plane, and only the field curvature occurs. The field curvature that occurs in the case of the batch exposure in FIG. 4A is a function of a second or higher order with respect to the image height with respect to a plane which is an ideal image plane represented by a dotted line as shown in FIG. 5A. A curved image 24a that can be approximated is obtained.

On the other hand, the field curvature generated in the scanning exposure of the image 4 (b) has a small influence on the width in the short direction of the slit, and therefore, the direction orthogonal to the scanning direction indicated by the arrow in the drawing, ie, the slit Can be approximated by a curved cylindrical image 24b that can be approximated by a function of the second or higher order of the image height only in the longitudinal direction. Therefore, the change in the distortion of the image plane due to the illumination mode in the scanning exposure as shown in FIG. 4B may be considered only in the longitudinal direction of the slit.

That is, in scan exposure, reticle deformation by the reticle deformation means is performed only in one direction in the longitudinal direction of the slit, so that the image plane can be corrected according to the illumination mode. Since the correction can be limited to only one direction, the deformation mechanism around the reticle can be prevented from becoming complicated, and the deformation mechanism can be realized in a simpler form than the collective exposure.

FIG. 6 schematically shows an example of means for deforming the reticle only in the longitudinal direction of the slit.
In the figure, 16 is a reticle, 25 is a position where a vacuum suction nozzle is mounted on the reticle, and an arrow indicates the direction of scan exposure. Side 161 of reticle in direction perpendicular to scan
, 162 is fixed, and the reticle is sucked by the vacuum suction nozzle provided at the position 25 outside the exposure range of the reticle in the direction parallel to the scan, so that the reticle moves the generatrix in the direction parallel to the scan direction as shown in the figure. It can be deformed into a cylindrical shape. At least four or more suction nozzles are required. In FIG. 6, six suction nozzles are provided symmetrically with respect to an axis in the scanning direction passing through the center of the reticle.
The amount of deformation is adjusted by the suction pressure of the plurality of suction nozzles. In the figure, a deformed shape that is convex downward is shown. Conversely, in order to cause a deformed shape that is convex upward, suction is performed by a vacuum suction nozzle (not shown) that is deformed in the opposite direction provided below the reticle. .

If the image plane distortion includes a tilt component, the reticle stage 15 holding the reticle 16 is tilted in a direction to cancel the image plane tilt.

That is, in the present invention, when the distortion of the image plane is composed of components having a curvature and an inclination depending on the illumination mode as shown in FIG. 1 (c), the curved surface of the reticle and the inclination of the reticle stage are simultaneously given. It is characterized in that the image plane distortion is corrected. In the present invention, "image surface distortion" is used in a broad sense including inclination and curvature of an image surface, and "reticle deformation" is included in a curved surface deformation and inclination of a reticle.

For example, in the projection exposure apparatus shown in FIG.
Set the NA of the projection optical system to 0.6,
When 26 mm, magnification is 1 / 4X, and light source wavelength is 248 nm, the amount of change in image plane distortion due to the illumination mode is 0.3 mm at the outermost periphery of the exposure area.
It reaches about μm. Assuming that this field distortion is field curvature,
The reticle deformation required for correcting the curvature by 0.1 μm is 1.6 μm at the outermost periphery. The deformation of 1.6 μm is a value that can be sufficiently realized by the vacuum adsorption method described above.

Further, in the scanning exposure, since the magnification difference between the vertical and horizontal directions caused by the reticle deformation in only one direction, that is, the so-called vertical / horizontal magnification difference can be ignored, there is an advantage that the correction relating to the magnification can be simplified. As in the case of the batch exposure, magnification can be corrected without deteriorating other aberrations, for example, by driving a plurality of lenses near the reticle included in the projection exposure system by a predetermined amount in the optical axis direction. The correction is applied to the longitudinal magnification of the slit. Since there is no need to consider the difference between the vertical and horizontal magnifications, the mechanism can be simplified and the number of adjustment steps can be reduced.

FIG. 7 shows a series of procedures from selection of an illumination mode to exposure in the projection exposure method and projection exposure apparatus according to the present invention. In the case of FIG. 7 (a), by reading the image surface distortion amount by the illumination mode, which was previously stored in the memory by selecting the illumination mode, and calculating the reticle deformation amount to cancel the image surface distortion amount, It is deformed and exposure is performed.

When a magnification error occurs due to reticle deformation for image plane correction, exposure is performed after correcting the magnification error. When a change in performance other than magnification occurs due to reticle deformation or magnification correction, if the correction can be made, the change is corrected before exposure is performed. For example, after performing the above correction, the focus position on the image plane may shift in the z-axis direction, which is the optical axis direction of the projection optical system. Since the amount of displacement can be determined in advance, the photosensitive substrate stage
If a predetermined offset is given in the z direction of 18, the focus position can be corrected.

FIG. 7B shows an example of a system which performs image plane measurement and correction each time an illumination mode is selected. The distortion of the image plane can be calculated, for example, by measuring at a plurality of positions in the exposure area using an image plane measurement pattern arranged on the photosensitive substrate stage 18. After calculating the reticle deformation amount from the calculated data for the image surface distortion and the basic table previously stored in the memory and showing the relationship between the image surface distortion and the reticle deformation amount, and then deforming the reticle, the exposure is performed. Is performed.

When a magnification error occurs due to reticle deformation for correcting image plane distortion, exposure is performed after correcting the magnification error. Also in the case where a change in performance other than magnification occurs after reticle deformation or magnification correction, if the change can be corrected, exposure is performed after correction is performed as in FIG. 7A.

In actual exposure, the lens of the projection optical system undergoes thermal expansion deformation, refractive index change, and heat of the lens barrel due to changes in the atmospheric pressure and temperature, which are the exposure environment, or exposure history due to heat absorption of the exposure light. Expansion deformation and the like occur, and the distortion of the image plane changes more complicatedly. In the projection exposure method and the projection exposure apparatus of the present invention, a change in image plane distortion due to the above-described exposure history or environmental change is considered for each illumination mode as shown in FIGS. 3 (a), (b) and (c). The reticle deformation means is controlled to correct the image plane distortion.

The control of the reticle deformation means can be performed according to the same flow as in FIGS. 7 (a) and 7 (b). Taking the exposure history as an example, the amount of change of the image plane distortion may be prepared in advance in the memory for each illumination mode, or the image plane distortion may be sequentially measured during the exposure and fed back. The image plane distortion is finally converted into a reticle deformation amount, and correction is performed by deforming the reticle shape by reticle deformation means.

In order to control the influence of the heat absorption of the exposure light by pre-stored data as in the former, the energy of the exposure light given to the lens and the barrel of the projection optical system for a certain illumination mode as a function of the exposure time. On the other hand, the change in the image plane distortion due to the energy absorption of the exposure light is obtained by simulation or experiment. Further, the image plane distortion and the reticle deformation amount for canceling the image plane distortion are obtained in advance by simulation or the like. From these preliminary data, the relationship between the exposure time and the reticle deformation amount in one illumination mode can be obtained. Data necessary for the calculation is stored in a memory in advance, and by appropriately performing calculations according to the exposure conditions, it is possible to control the correction of the image plane distortion based on the exposure history under one illumination mode.

If the above-mentioned database is individually executed for another illumination mode, it is possible to correct the image plane distortion caused by the exposure history for each illumination mode.

It is also possible to measure the energy of the exposure light in the projection exposure apparatus and directly correct the image plane distortion by associating the energy of the exposure light with the amount of reticle deformation.

In the latter embodiment, a projection optical system by exposure is used.
Since the image plane distortion of 17 is actually measured and corrected, the system flow is exactly the same as that of FIG. 7 (b).

When a magnification error occurs due to reticle deformation for correcting image plane distortion, exposure is performed after correcting the magnification error. If performance changes other than magnification remain after reticle deformation or magnification correction, the change is corrected if the change can be corrected, and exposure is performed as shown in FIG.
Same as (a).

In the above embodiment, the reticle side is deformed. However, the deformation can be equivalently performed on the wafer side. When deformation is performed on the wafer side, the change in curvature can be corrected by arranging an actuator on a holder for the wafer and driving the actuator in the z-axis direction, which is the optical axis direction of the projection optical system. On the other hand, the tilt can be easily corrected by tilting the wafer holder.

The correction of the image plane distortion due to the deformation of the wafer is completely equivalent to the reticle deformation. A data table is previously provided for the image plane distortion caused by the change of the illumination mode, the exposure history, and the exposure environment, or a feedback loop is provided. In this embodiment, the image distortion is measured and correction is performed.

In the same manner, the correction by the deformation of the wafer is suitable for the scanning exposure. The image surface distortion is corrected in the longitudinal direction of the slit, and the magnification generated at the time of the correction is corrected by the projection optical system. Exposure is the same. The magnification is corrected for the magnification in the longitudinal direction of the slit.

The correction of the image plane distortion described above does not always have to be completely zero, but it is sufficient that the exposure area falls within the depth of focus of the projection optical system. By performing the correction as described above, the depth of focus is surely improved.

[0055]

As described above, in the projection exposure method and the projection exposure apparatus according to the present invention, the image exposure distortion, the exposure environment, the exposure history, etc., which change for each illumination mode changed by the illumination light deformation means. The image distortion is corrected by deforming the reticle by the reticle deformation means so as to cancel the image distortion, thereby realizing a flat image surface characteristic and increasing the depth of focus. The same effect can be obtained even if the deformation is performed on the wafer side.

Since the projection optical system assembled with high precision is not manipulated by deforming the reticle or wafer, it is possible to always obtain good imaging characteristics over the entire exposure area without using a complicated correction mechanism. it can.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of image surface distortion and correction of the present invention,

FIG. 2 is a diagram showing an embodiment of a projection exposure apparatus to which the present invention is applied,

FIG. 3 is a diagram showing shapes of illumination light and an aperture;

FIG. 4 is an explanatory view of batch exposure and scan exposure,

FIG. 5 is a diagram showing image surface distortion generated by batch exposure and scan exposure;

FIG. 6 shows an embodiment of a reticle deformation means according to the present invention,

FIG. 7 is a flowchart for correcting image plane distortion according to the present invention.

[Explanation of symbols]

 1-4 Image plane by various illumination modes, 10 illumination system, 11 light sources, 12, 13 lens, 14 mirror, 15 reticle stage, 16 reticle, 17 projection optical system, 18 photosensitive substrate stage, 19 photosensitive substrate, 20 illumination light 21 Intensity distribution deformation means, 21 Calculation means, 22 Illumination light, 23 Exposure area, 24 Image surface distortion, 25 Mounting position of vacuum suction nozzle, 26 Reticle deformation means, 161 and 162 Side of reticle

Claims (43)

[Claims] A projection exposure apparatus for manufacturing a semiconductor element, wherein the projection exposure apparatus illuminates a reticle;
A projection optical system for exposing and transferring a pattern formed on the reticle onto a photosensitive substrate, illumination light deforming means for deforming an intensity distribution of light formed by the illumination system on a pupil plane of the projection optical system, and the reticle A reticle deforming means for distorting the light. 2. The projection exposure apparatus according to claim 1, wherein said reticle deformation means is controlled so as to cancel image plane distortion generated by said projection optical system. 3. The projection exposure apparatus according to claim 2, wherein the field distortion includes a field curvature and a field inclination component. 4. The projection exposure apparatus according to claim 3, wherein the field curvature is corrected by deforming the reticle, and the inclination of the image plane is corrected by tilting the reticle. 5. The projection exposure apparatus according to claim 4, wherein a relationship between a reticle deformation amount by said reticle deformation means and an image plane distortion amount of said projection optical system is stored in advance. 6. The projection exposure apparatus according to claim 5, wherein the amount of image plane distortion generated by the projection optical system is stored in advance as a data table. 7. The projection exposure apparatus according to claim 5, wherein an amount of image plane distortion generated by the projection optical system is measured, and correction is performed based on the measurement result. 8. The projection exposure apparatus according to claim 7, wherein said reticle deformation means is driven in accordance with deformation of illumination light by said illumination light deformation means. 9. The apparatus according to claim 8, wherein said reticle deforming means is driven in accordance with an exposure history of said projection optical system.
The projection exposure apparatus according to claim 1. 10. The projection exposure apparatus according to claim 9, wherein said reticle deformation means is driven in accordance with a change in an exposure environment of said projection exposure apparatus. 11. The projection exposure apparatus according to claim 1, wherein the projection exposure apparatus is an apparatus that performs scan exposure. 12. The projection exposure apparatus according to claim 11, wherein the reticle deformation means deforms the reticle only in a longitudinal direction of a slit in a slit-shaped illumination area irradiated by the illumination system. 13. The projection exposure apparatus according to claim 12, further comprising: means for correcting a change in magnification that occurs when the reticle is deformed by the reticle deforming means. 14. The projection exposure apparatus according to claim 13, wherein the magnification change is corrected for a longitudinal magnification of the slit-shaped illumination area. 15. The method according to claim 14, wherein a change in the projection optical system remaining after correcting the change in magnification is corrected.
The projection exposure apparatus according to claim 1. 16. The projection exposure apparatus according to claim 15, wherein said reticle deformation means has a plurality of suction nozzles in a direction in which scan exposure is performed. 17. The projection exposure apparatus according to claim 16, wherein the reticle deforming means controls a deformation amount by changing a suction pressure of the suction nozzle. 18. A projection exposure apparatus for manufacturing a semiconductor device, wherein the projection exposure apparatus illuminates a reticle, a projection optical system which exposes and transfers a pattern formed on the reticle onto a wafer serving as a photosensitive substrate, A projection exposure apparatus, comprising: an illumination light deforming unit that deforms an intensity distribution of light formed on a pupil plane of the projection optical system, and a wafer deforming unit that warps the wafer. 19. The projection exposure apparatus according to claim 18, wherein said wafer deforming means is controlled so as to cancel image plane distortion generated by said projection optical system. 20. The projection exposure apparatus according to claim 19, wherein the field distortion includes a field curvature and a field inclination component. 21. The projection exposure apparatus according to claim 20, wherein the curvature of field is deformed on the wafer, and the inclination of the image plane is corrected by tilting the wafer. 22. The projection exposure apparatus according to claim 21, wherein an amount of image plane distortion generated by said projection optical system is stored in advance as a data table. 23. The projection exposure apparatus according to claim 21, wherein an amount of image plane distortion generated by the projection optical system is measured, and correction is performed based on the measured value. 24. The projection exposure apparatus according to claim 22, wherein said wafer deforming means is driven in accordance with a state of deformation of the illumination light by said illumination light deforming means. 25. The apparatus according to claim 24, wherein said wafer deforming means is driven in accordance with an exposure history of said projection optical system.
The projection exposure apparatus according to claim 1. 26. The projection exposure apparatus according to claim 25, wherein said wafer deformation means is driven according to a change in an exposure environment of said projection exposure apparatus. 27. A projection exposure apparatus according to claim 18, wherein said projection exposure apparatus is an apparatus for performing scan exposure. 28. The projection exposure apparatus according to claim 27, wherein the wafer deformation means deforms the wafer only in a longitudinal direction of a slit in a slit-shaped illumination area irradiated by the illumination system. 29. The projection exposure apparatus according to claim 28, further comprising means for correcting a change in magnification that occurs when the wafer is deformed by the wafer deforming means. 30. The projection exposure apparatus according to claim 29, wherein the magnification change is corrected for a longitudinal magnification of the slit-shaped illumination area. 31. The projection optical system according to claim 30, wherein a change in the projection optical system remaining after correcting the change in magnification is corrected.
The projection exposure apparatus according to claim 1. 32. In a projection exposure method for manufacturing a semiconductor element, when a reticle is illuminated by an illumination system having illumination light deforming means and a pattern formed on the reticle is exposed and transferred onto a wafer by a projection optical system, A projection exposure method, wherein the reticle or the wafer is deformed in response to a change in an exposure state of the projection optical system. 33. The projection exposure method according to claim 32, wherein the deformation of the reticle or the wafer is controlled so as to cancel the image plane distortion generated by the projection optical system. 34. The method according to claim 33, wherein the change in the exposure state is a change in the illumination state by the illumination light deforming means.
The projection exposure method as described in the above. 35. The method according to claim 33, wherein the change in the exposure state is a change in the projection optical system due to an exposure history.
The projection exposure method as described in the above. 36. The change in the exposure state is a change in an exposure environment for the projection optical system.
33. The projection exposure method according to 33. 37. The projection exposure method according to claim 33, wherein the projection exposure method is a method performed by scan exposure. 38. The projection exposure method according to claim 37, wherein in the projection exposure method, the deformation of the reticle or the wafer is corrected in a longitudinal direction of the slit in a slit-shaped illumination area irradiated by the illumination system. Method. 39. A method according to claim 39, wherein a change in magnification caused by deformation of said reticle or wafer is corrected.
38. The projection exposure method according to 38. 40. The projection exposure method according to claim 39, wherein the change in magnification is corrected for a magnification in a longitudinal direction of the slit-shaped illumination area. 41. A method according to claim 40, wherein a change in said projection optical system remaining after correcting said change in magnification is corrected.
The projection exposure method as described in the above. 42. The projection exposure method according to claim 37, wherein the amount of image plane distortion generated by said projection optical system is stored in advance as a data table. 43. The projection exposure method according to claim 37, wherein an amount of image plane distortion generated by the projection optical system is measured, and correction is performed based on the measured value.