JP2000066365A - Photomask pattern design support apparatus, photomask pattern design support method and recording medium recording photomask pattern design support program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photomask pattern design support apparatus capable of rapidly executing information feedback of pattern correction, etc., by efficiently executing the light intensity simulation of an enormous amt. of mask patterns by parallel processing usign plural arithmetic processors, a method therefor and a recording medium recording a design support program. SOLUTION: The mask pattern data of the LSI circuit pattern data and mask pattern data inputted from a CAD apparatus are divided to plural pattern regions (system S1) and is converted to a simulation data system (step S2). The converted simulation data are distributed to the plural arithmetic processors (step S3). The pattern data based on the simulation results calculated by the arithmetic processors and the inputted LSI circuit pattern data described above are compared and evaluated (step S6).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask pattern design support apparatus and a photomask pattern design support method which mainly support the design of a photomask pattern in a research and development application and a design process in a photolithography process in a semiconductor manufacturing process. And a recording medium on which a photomask pattern design support program is recorded.

[0002]

2. Description of the Related Art Conventionally, in the research and development or development prototype stage of a semiconductor process, it has been used as a technique for grasping the characteristics of the process and the product, and for virtually conducting prediction and evaluation of the characteristics with respect to the manufacturing conditions. ing. In particular, the simulation technology of the photolithography process, which is the fine processing technology, which is the main technology in semiconductor manufacturing, has been theoretically established and is an indispensable technology in research and development.

[0003] Among photolithography simulations, a simulation of an exposure step is particularly called a "light intensity simulation" and is performed by a reduction projection exposure apparatus (hereinafter, referred to as "light intensity simulation").
A light intensity distribution of a projection optical image when a photomask pattern (hereinafter, referred to as a mask pattern) is exposed and transferred onto a wafer using a stepper is calculated.

[0004] The theory underlying the light intensity simulation technique is, as a physical theory, an imaging optical theory established by H. Hopkins et al. (Reference: Born, Wolf, "Principles of Optics II, III", 1975, or , H.Hopkins; J.Opt.Soc.Am.V
ol. 47, No. 6 ('57) p508-, etc.), and examples of computer calculation models include models by Lin or Yeung.
Software for performing computer simulation is also called a simulator.

[0005] By performing the light intensity simulation described above, the exposure distribution on the wafer can be estimated without actually performing lithography. Therefore, the light intensity simulation is frequently performed in the R & D of the lithography process and the experimental analysis and evaluation in the device prototype. Has been used.
In particular, in recent years, the required fine processing technology is approaching the limit of processing by light, and it has become difficult to develop devices by actually performing experiments in terms of technology and cost. Therefore, light intensity simulations that can obtain results quickly and at low cost have become increasingly important.

Further, the light intensity simulation is also applied in the design aspect, and is being put to practical use as a means for optimizing a lithography process in designing a mask pattern. In particular, light intensity simulation is recognized as important and indispensable in the design of advanced devices that are being miniaturized.

[0007]

By the way, as the advanced technology of lithography, a super-resolution technology such as a phase shift method and an optical proximity correction (OPC) technology are attracting attention as so-called ultra-fine processing technology. All of these require processing of a mask pattern. Moreover, this processing rule is completely different from the LSI circuit design rule based on electronic circuit characteristics, and is set for optimizing the process of the lithography process.
For this reason, in order to optimize the mask pattern, it is necessary to use a lithography process, or at least an optimization unit that takes into account the exposure process. Therefore, a pattern optimization unit based on the exposure condition using a light intensity simulation is required. Was needed.

[0008] The light intensity simulation is performed in a semiconductor LSI.
The optical system of the stepper, which is generally used in the manufacturing process, is configured as a physical model, and the configuration of the optical system mainly includes a light source, an illumination lens, a photomask, a projection lens, and a wafer. Although details are left to the above-mentioned reference, the light intensity simulation numerically simulates this optical system,
By calculating using the imaging optics theory, a projection image when a photomask pattern image is transferred onto a wafer by projection exposure is obtained.

Since the light intensity simulation uses an optical theory, there is an advantage in that there are fewer uncertainties and a highly accurate result can be obtained as compared with the simulation of other lithography processes, and the simulation result is fed back to the pattern design. Attempts to do so have been flourishing in recent years.

However, since the light intensity simulation generally requires a considerably large amount of calculation, it is difficult to simulate the entire pattern of the LSI chip within a practical processing time even with a recent high-speed computer. In particular, in the light intensity simulation, although the calculation amount differs depending on the calculation algorithm, the calculation amount theoretically increases in proportion to the square to the fourth power of the pattern area.
In reality, there is an inconvenience that only a small area pattern can be calculated.

Further, as a method of performing a simulation having a large amount of calculation, a plurality of arithmetic processing processors are connected,
Attempts have been made to perform parallel processing. However, in many cases, if the optimization is not designed as a dedicated parallel processing device, efficient arithmetic processing cannot be executed in terms of algorithm, so that the device becomes expensive and inconvenient if the operation efficiency is not good. Was.

Further, the actual LSI pattern data has a very large area and is complicated, and is usually composed of hundreds of thousands to several tens of millions of closed figures. In the future, there is a prospect of further expansion. For a pattern having such a huge data amount, it is practically impossible to perform light intensity simulation on the entire mask pattern in order to optimize the fine processing accuracy from the viewpoint of time and cost. There is also a method in which a simulation is performed only on a limited partial area. However, in this method, a pattern must be manually extracted, and it is extremely difficult to use the simulation in a mass production stage.

[0013] Further, with the advance of miniaturization of patterns, ultra-fine processing technology has been used in the lithography process, so that special patterns or pattern design rules for ultra-fine processing that are not included in logic circuits have been developed. It has become necessary for mask pattern design. For this reason, it is impossible to design a mask pattern that can obtain optimal fine processing accuracy by the conventional design rule based on the logic circuit of the LSI.

However, these pattern design rules for ultra-fine processing have not been established yet, and it is difficult to use technically simple design rules. Therefore, at this stage, a mask pattern for ultra-fine processing is individually designed by applying the experimental results and simulation results in the lithography process to the pattern of the conventional design rule obtained by developing the logic circuit. are doing.

[0015] Therefore, almost all designers make individual judgments, and the results of experiments and simulations in the lithography process can be reflected in mask patterns designed according to the conventional design rules. Because of the work, there is a problem that the design efficiency is very poor.

In view of the above problems, the present invention enables efficient parallel processing by using a plurality of arithmetic processing processors to efficiently simulate an enormous amount of mask patterns, and to reduce the simulation result. Record a photomask pattern design support device, a photomask pattern design support method, and a photomask pattern design support program that can evaluate and judge by comparing with the original circuit pattern data and quickly perform information feedback such as pattern correction. It is an object of the present invention to provide a recording medium that has been used.

[0017]

According to a first aspect of the present invention, there is provided a data input means for inputting circuit pattern data created by a photomask pattern designing CAD apparatus and photomask pattern data of the circuit pattern, Parameter input means for inputting optical condition parameters required for intensity simulation, and a plurality of arithmetic processing processors, the photomask pattern data, and, based on the optical condition parameters, parallel calculations for light intensity simulation Parallel processing means for processing, and after converting the photomask pattern data input by the data input means into a plurality of pattern areas based on predetermined conditions and converting them into a data format for light intensity simulation, the optical condition parameters And each operation processing of the parallel processing means And distributes the pattern data based on each simulation result obtained by the parallel processing means to a pattern data portion of the circuit pattern data corresponding to the pattern data. And a data processing means for feeding back to the apparatus.

According to a second aspect of the present invention, in the photomask pattern design support apparatus according to the first aspect, the data processing means converts the photomask pattern data input by the data input means based on a predetermined condition. Data dividing means for dividing each of the divided photomask pattern data into a data format for light intensity simulation, and data converting means for each of the converted light intensity simulations. A data distribution unit for distributing data to a plurality of data; a second data conversion unit for converting data of each simulation result obtained by the parallel processing unit into a format of the circuit pattern data; and a second data conversion unit Pattern data based on each simulation result converted by And comparative evaluation of the pattern data portion of the circuit pattern data corresponding to the data, is characterized by comprising a pattern comparison evaluating means for feedback to the photomask pattern design CAD system.

According to a third aspect of the present invention, in the photomask pattern design support apparatus according to the second aspect, the data distribution unit is divided by the data division unit and converted by the first data conversion unit. Based on the number of simulation data and the number of arithmetic processing processors in the parallel processing means, the amount of calculation in each arithmetic processing processor is equally distributed.

According to a fourth aspect of the present invention, there is provided a photomask pattern design support method for supporting the design of a photomask pattern in a research and development application and a design process. A first step of inputting photomask pattern data of the circuit pattern, a second step of inputting optical condition parameters required for light intensity simulation, and converting the input photomask pattern data based on predetermined conditions. A third step of dividing the plurality of pattern areas into a plurality of pattern areas, a fourth step of converting the divided respective photomask pattern data into a data format for light intensity simulation, and a step of converting each of the converted light intensity simulation data. A fifth step of distributing the light into a plurality of light beams, A sixth step of performing, in parallel, a calculation for light intensity simulation by a plurality of processing processors based on the power simulation data and the optical condition parameters, and each simulation obtained in the sixth step. A seventh step of converting the resulting data into the format of the circuit pattern data; comparing the pattern data based on the converted simulation results with a pattern data portion of the circuit pattern data corresponding to the pattern data; An eighth step of evaluating and feeding back to the CAD apparatus for designing a photomask pattern.

According to a fifth aspect of the present invention, in the photomask pattern design supporting method according to the fourth aspect, the distribution in the fifth step is divided in the third step,
On the basis of the number of simulation data converted in the fourth step and the number of the plurality of arithmetic processors, the calculation amount of each arithmetic processor is distributed so as to be equal.

According to a sixth aspect of the present invention, there is provided a computer-readable recording medium storing a photomask pattern design support program for supporting the design of a photomask pattern in research and development applications and design steps, wherein The pattern design support program
A first step of inputting circuit pattern data created in a photomask pattern designing CAD apparatus and photomask pattern data of the circuit pattern; a second step of inputting optical condition parameters required for light intensity simulation; A third step of dividing the input photomask pattern data into a plurality of pattern areas based on predetermined conditions, and a fourth step of converting each of the divided photomask pattern data into a data format for light intensity simulation. And a fifth step of distributing each of the converted light intensity simulation data to a plurality of pieces, and a plurality of arithmetic processing based on each of the distributed light intensity simulation data and the optical condition parameters. Processor for light intensity simulation A sixth step of performing parallel processing for the calculation, a seventh step of converting data of each simulation result obtained in the sixth step into a form of the circuit pattern data, and a step of converting each of the converted simulations. An eighth step of comparing and evaluating the pattern data based on the result and the pattern data portion of the circuit pattern data corresponding to the pattern data, and feeding back to the CAD apparatus for designing the photomask pattern. .

According to a seventh aspect of the present invention, in the computer readable recording medium storing the photomask pattern design support program according to the sixth aspect, the distribution in the fifth step of the photomask pattern design support program is The number of simulation data divided in the third step and converted in the fourth step and the number of the plurality of arithmetic processors are used to equalize the amount of calculation in each arithmetic processor. It is characterized by sorting.

With the above-described configuration, if circuit pattern data and its photomask pattern data are input, the light intensity simulation result can be obtained most efficiently by appropriate data division and parallel processing of light intensity simulation. By feeding back the evaluation result of the comparison between the original circuit pattern data and the pattern data based on the light intensity simulation result, the pattern can be corrected immediately, so that photomask pattern data optimized in the lithography process can be obtained.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The contents of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a diagram showing a configuration of a photomask pattern design support device of the present invention. In this figure,
1 is a data processor (data processing means),
Each part of the photomask pattern design support device (hereinafter, abbreviated as “this device”) in the present embodiment is controlled through a bus B.

Reference numeral 2 denotes a ROM which stores a basic program of the apparatus, a basic control program such as input / output, and the like. Reference numeral 3 denotes a RAM (random access memory), which stores application software such as a light intensity simulation program executed in the apparatus, and is also used for temporarily storing data generated in a calculation process.

Reference numeral 4 denotes an external interface unit (data input means: hereinafter referred to as an I / F unit), which exchanges data with an external CAD device 20. Here, the CAD device 20
Has a function of generating mask pattern data from LSI circuit pattern data created by a designer. In addition, when generating the mask pattern data from the LSI circuit pattern data, the CAD device 20 also has a function of adding a temporary correction and an auxiliary pattern for ultra-fine processing to the generated mask pattern data. Then, data is exchanged with the present apparatus for the LSI circuit pattern data and the mask pattern data. A data reading / writing device 5 reads data recorded on the recording medium 21 and writes data on the recording medium 21.

The recording medium 21 is a computer-readable storage medium such as a magnetic tape, a floppy disk, a CD-ROM, and an MO disk, and stores application software such as a light intensity simulation program executed in the apparatus. ing. And the recording medium 2
1, the application software is read out and stored in an external storage device 6, which will be described later, and when the light intensity simulation is performed in the present device, the data processor 1
The application software stored in the external storage device 6 is
After reading to AM3, light intensity simulation and other processing are performed according to the application software.

The LSI circuit pattern data or mask pattern created by the CAD device 20 is recorded on a recording medium 21 'of the same type as the recording medium 21 described above, and the present device and the CAD device are recorded via the recording medium 21'. Data may be exchanged with the device 20.

The external storage device 6 includes a light intensity simulation program used in the present embodiment recorded on the recording medium 21 read by the data reading / writing device 5 and an LSI circuit pattern created by the CAD device 20. The data and the mask pattern data are stored. Further, data such as a result of a light intensity simulation performed in the present apparatus is stored. In general, a hard disk drive is used as the external storage device 6.

Reference numeral 7 denotes an input device (parameter input means) used for general computer input such as a keyboard and a mouse.
This is used when operating the present apparatus and inputting optical system parameters used for executing the light intensity simulation. Here, the optical system parameter is a numerical value representing an assumed optical system parameter of the stepper, and generally includes a light source wavelength, a lens numerical aperture, a coherence (= coherency), and an out-of-focus value (= defocus). focus)
And so on. A monitor 8 displays an operation screen of the apparatus, a data input / output screen, a simulation result screen, and the like.
Reference numeral 9 denotes a printer, which prints out pattern data, simulation results, and the like based on instructions from the operation side.

Numeral 10 denotes a group of parallel processing processors (parallel processing means), and n processing processors c1, c2,... Cn connected to each other by a local bus LB.
Consists of Further, based on simulation data (described later) distributed by the data processor 1, each arithmetic processor executes a light intensity simulation operation in parallel.

Next, the operation of the present apparatus will be described with reference to the flowchart shown in FIG. First, when the light intensity simulation is started in the present apparatus, the data processor 1 reads the LSI circuit pattern data and the mask pattern input from the CAD apparatus 20 via the I / F unit 4 in step S1 (data dividing means). The data is stored in the external storage device 6, and the mask pattern data is divided into a plurality of pattern areas based on predetermined conditions.

Here, the mask pattern data input from the CAD device 20 represents an LSI design pattern composed of an original closed figure which is expected to be formed on a wafer. Further, the above-described data division is performed when the mask pattern data has a large capacity and if it is processed as it is, a heavy load is applied. In this case, the subsequent processing is performed for each of the plurality of divided data.

Next, the flow advances to step S2 (first data conversion means) to convert the mask pattern data of each divided pattern area from the CAD data format to the simulation data format. Here, the simulation data format is a format in which an image of mask pattern data for each pattern area is quantified as an optical transmittance distribution and represented by matrix data.

More specifically, the image of the mask pattern data for each pattern area is divided into grids (meshes) of a predetermined size, and the light transmittance of each mesh is represented as matrix data. Represents a numerical value set as a complex transmittance as matrix data to represent the intensity transmittance and the phase of light. By converting the mask pattern data for each pattern area into a numerical value representing the complex transmittance for each mesh in this way, it is possible to calculate a light intensity simulation.

Then, the flow advances to step S3 (data distribution means) to distribute the converted simulation data for each pattern area to the respective processors c1, c2,..., Cn of the parallel processor group 10. This distribution
Based on the number of data divisions of the simulation data divided in step S1 and converted in step S2 and the number of arithmetic processing processors in the parallel processing means, the calculation is performed in each arithmetic processing processor so as to be equal. At this time, the optical system parameters input from the input device 7 are also output to each arithmetic processing processor.

As a result, in step S4, each processor c of the parallel processor group 10
, Cn perform light intensity simulation calculations based on the distributed simulation data and optical system parameters.

When the simulation calculation is completed in the parallel operation processor group 10, the data processor 1 proceeds to step S5 (second data conversion means).
Then, the simulation results calculated by the respective processors c1, c2,..., Cn of the parallel processor group 10 are converted into a CAD pattern data format. Then, the process proceeds to step S6 (pattern comparison and evaluation means), where the pattern data converted into the CAD pattern data format based on the simulation result and the LSI circuit pattern data created in the CAD device 20 stored in the external storage device 6 Is compared and evaluated.

Here, the pattern data converted into the CAD pattern data format based on the simulation result is data representing a pattern shape expected to be formed on the wafer, and as described above, Corrections and auxiliary patterns for
It does not match the LSI circuit pattern designed in the D device 20. Therefore, the L input from the CAD device 20
Based on the pattern based on the SI circuit pattern data,
By comparing and evaluating a pattern based on a simulation result, it is possible to simulate a difference between an original design pattern and a pattern formed on a wafer.

Next, the process proceeds to step S7, and outputs the result of the comparison and evaluation performed in step S6 to the CAD device 20 via the I / F unit 4. This allows the CAD device 20 to immediately correct the circuit pattern.

In the present apparatus, the parallel processor group 10 is assumed to be composed of a plurality of processors for performing parallel processing. However, the present invention is not limited to the above-described hardware configuration. A plurality of computers in a distributed processing environment of a simple network computer may be used in place of the above-described parallel processing processor group 10.

Instead of the parallel operation processor group 10, a single computer may be provided with communication means in a network environment and a plurality of computers may be connected. Further, a so-called multi-CPU machine designed for parallel processing may be used. That is, the parallel processor group 10 may be any processor that can simultaneously receive data and execute calculations simultaneously in each of the plurality of processors.

In this embodiment, the input / output means, the storage means, and the screen display means, which are not particularly described, are all used in accordance with the hardware configuration of a general computer. The photomask pattern design support apparatus according to the present embodiment is configured with software and hardware for executing light intensity simulation calculation using these hardware and performing various data processing following the calculation. ing.

[0045]

As described above, according to the present invention, if circuit pattern data and photomask pattern data and necessary optical condition parameters are input,
Even if the data volume is very large, the data processing means performs data division before and after the data conversion, data conversion before and after the simulation, data distribution to a plurality of arithmetic processing processors, and comparative evaluation. Since the operation is performed in parallel by the parallel processing means, extremely efficient processing is performed.

That is, by dividing large pattern data, it is possible to reduce the amount of calculation per processor, and to distribute the data evenly among a plurality of processors to easily execute parallel processing. Significantly increase the calculation time.

The data processing processor performs data conversion processing of photomask pattern data, and compares and evaluates the pattern data based on the light intensity simulation result with the original circuit pattern data. Feedback of information on correction / optimization of data.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of an embodiment of a photomask pattern design support apparatus according to the present invention.

FIG. 2 is a flowchart showing a processing procedure in the photomask pattern design support device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Data processor 2 ROM 3 RAM 4 I / F part 5 Data read / write device 6 External storage device 7 Input device 8 Monitor 9 Printer 10 Parallel operation processing processor group 20 CAD device 21, 21 'Recording medium

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Eiji Shinomori, Inventor 1-5-1, Taito, Taito-ku, Tokyo Inside Toppan Printing Co., Ltd. (72) Inventor Masaya Fujita 1-1-5-1, Taito, Taito-ku, Tokyo F-term in Toppan Printing Co., Ltd. (reference) 2H095 BB01 5B046 AA08 BA04 CA01 JA04 5F064 DD03 HH06 HH09 HH12 HH13

Claims (7)

[Claims] 1. A data input means for inputting circuit pattern data created in a photomask pattern designing CAD apparatus and a photomask pattern data of the circuit pattern, and a parameter input for inputting optical condition parameters required for light intensity simulation. Means, a plurality of arithmetic processing processors, parallel processing means for performing parallel processing of light intensity simulation based on the photomask pattern data and the optical condition parameters, and input by the data input means. The divided photomask pattern data is divided into a plurality of pattern areas based on predetermined conditions, converted into a data format for light intensity simulation, and then distributed to the arithmetic processing processors of the parallel processing means together with the optical condition parameters. Together with the parallel processing Data processing means for comparing and evaluating pattern data based on each simulation result obtained by the processing means and a pattern data portion of the circuit pattern data corresponding to the pattern data, and feeding back to the CAD apparatus for designing the photomask pattern; A photomask pattern design support device comprising: 2. The data processing unit includes: a data dividing unit that divides photomask pattern data input by the data input unit into a plurality of pattern areas based on a predetermined condition; First data conversion means for converting data into a data format for light intensity simulation, data distribution means for distributing the converted light intensity simulation data to a plurality of data, and each simulation obtained by the parallel processing means Second data conversion means for converting the resulting data into the format of the circuit pattern data; pattern data based on each simulation result converted by the second data conversion means; and the circuit corresponding to the pattern data Compare and evaluate the pattern data with the pattern data Photomask pattern design support apparatus according to claim 1, characterized in that it consists of a pattern comparison evaluating means for feedback to the photomask pattern design CAD system. 3. The data distribution means, based on the number of simulation data divided by the data division means and converted by the first data conversion means, and the number of arithmetic processing processors in the parallel processing means. 3. The method according to claim 2, further comprising the steps of:
3. A photomask pattern design support apparatus according to claim 1. 4. A photomask pattern design support method for supporting the design of a photomask pattern in research and development applications and in a design process, comprising: a circuit pattern data created in a photomask pattern design CAD apparatus; and a photomask pattern of the circuit pattern. A first step of inputting data, a second step of inputting optical condition parameters required for light intensity simulation, and dividing the input photomask pattern data into a plurality of pattern regions based on predetermined conditions. A third step, a fourth step of converting the divided photomask pattern data into a data format for light intensity simulation, and a fifth step of distributing the converted light intensity simulation data to a plurality. And simulation of each of the distributed light intensities. A sixth step of performing, in parallel, a calculation for light intensity simulation by a plurality of processing processors based on the data for use and the optical condition parameters; and a simulation result of each of the simulation results obtained in the sixth step. A seventh step of converting data into the format of the circuit pattern data; and comparing and evaluating pattern data based on the converted simulation results with a pattern data portion of the circuit pattern data corresponding to the pattern data. And an eighth step of feeding back to the CAD apparatus for designing a photomask pattern. 5. The distribution in the fifth step is based on the number of simulation data divided in the third step and converted in the fourth step and the number of the plurality of arithmetic processors. 5. The method according to claim 4, wherein the calculation amount of each arithmetic processing processor is distributed so as to be equal. 6. A computer-readable recording medium having recorded thereon a photomask pattern design support program for supporting the design of a photomask pattern in research and development applications and in a design process, the medium being created in a photomask pattern design CAD apparatus. A first step of inputting the circuit pattern data and the photomask pattern data of the circuit pattern, a second step of inputting optical condition parameters required for light intensity simulation, and A third step of dividing the divided photomask pattern data into a data format for light intensity simulation based on the conditions of the above; and a fourth step of converting each of the divided photomask pattern data into a data format for light intensity simulation. Strength simulation data A fifth step of distributing data to a plurality of light intensity simulation data, and a plurality of arithmetic processing processors, based on the distributed light intensity simulation data and the optical condition parameters, perform arithmetic processing for light intensity simulation in parallel. A sixth step of converting the data of each simulation result obtained in the sixth step into a format of the circuit pattern data; and a pattern data based on each of the converted simulation results. An eighth step of comparing and evaluating a pattern data portion of the circuit pattern data corresponding to the pattern data, and feeding back to the CAD apparatus for designing the photomask pattern. Possible recording medium. 7. A computer-readable recording medium recording the photomask pattern design support program according to claim 6, wherein the distribution in the fifth step is divided in the third step, and the distribution in the fourth step is performed in the fourth step. A photomask pattern design support program characterized in that, based on the number of simulation data converted in the step and the number of the plurality of arithmetic processors, the amount of calculation in each arithmetic processor is equally distributed. A computer-readable recording medium that has been recorded.