JP2000058520A - Substrate mount stage, its manufacture, and treatment of substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate mount stage which can avoid the occurrence of damages resulting from the difference in thermal expansion between materials, can sufficiently tolerate high temperatures, and can be manufactured easily. SOLUTION: A substrate mount stage is constituted of a composite material 11, has an electrostatic chucking function, and is provided with a temperature control means and the material 11 is composed of a base material 12 prepared by filling the texture of a ceramic member with an aluminum-based material and a ceramic layer 13 formed on the surface of the base material 12 by a melt-spraying method. The ceramic layer 13 is formed in a laminated body formed by laminating a second ceramic layer 130B upon a first ceramic layer 130A and an electrode 14 which makes the ceramic layer 13 exhibit an electrostatic chucking function is formed between the first and second ceramic layers 130A and 130B.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate mounting stage, a method of manufacturing the same, and a method of treating a substrate.

[0002]

2. Description of the Related Art In recent VLSI, it is required to integrate several million elements or more on a chip of several mm square. Further, the dry etching technology for realizing the microfabrication of the VLSI and the chemical vapor deposition (CVD) method, which is one of the thin film forming technologies, are required to have higher accuracy. Processes devising chemistry, plasma source, wafer temperature control, and the like have been proposed.

In the manufacture of semiconductor devices, there are many processes for performing plasma processing on various semiconductor substrates and wafers or various thin films formed thereon, such as plasma etching processing and plasma CVD processing. In addition, various semiconductor substrates and wafers, or various thin films formed thereon may be hereinafter collectively referred to as a base. In these plasma processing processes, particularly in the case of a plasma etching process or the like, in order to increase the processing accuracy, a plasma process in a state where the substrate is held at a normal temperature to a low temperature of 0 ° C. or less is being adopted. Therefore, in the treatment process, it has been recognized that it is important to control and control the temperature of the substrate in order to increase the processing accuracy and the processing accuracy of the substrate.

In recent years, with the progress of multilayer wiring technology in semiconductor devices, there has been a demand for using copper (Cu) as a wiring material, for example, to reduce the resistance of wiring or to improve electromigration resistance. Therefore, a technique for appropriately dry-etching a wiring material made of such copper is being developed. Alternatively, there is a demand for adopting a high-density plasma CVD process for the gap fill technique. Therefore, not only the process of performing the plasma processing at room temperature or low temperature, but also the process of performing the plasma processing while maintaining the substrate at a high temperature,
Its importance is increasing.

However, in the plasma treatment at such a high temperature, a large amount of plasma enters the substrate due to ion bombardment of the substrate in the etching process, irradiation of the substrate with high-density plasma in the gap fill CVD process, and the like. Heat is generated. As a result, for example, the temperature of the substrate is about 40 ° C. to 100 ° C. compared to before the plasma generation.
It may rise by more than a degree. Therefore, even in a process in which the substrate is heated by a substrate mounting stage (for example, a wafer stage) holding the substrate and plasma processing is performed at a high temperature, the effect of heat input from the plasma to the substrate is suppressed, and the substrate is set with high accuracy. Technology to control the temperature is important.

[0006]

However, in the prior art, the temperature control of the substrate at a high temperature cannot be said to be sufficient. In the prior art, it is natural that the above-mentioned temperature rise occurs in the substrate during the process, and the temperature of the substrate mounting stage is previously set to be lower in consideration of such a temperature rise of the substrate. . Since the process proceeds in anticipation of such a rise in the temperature of the substrate, the process time is prolonged, the throughput is reduced, and the reproducibility and controllability of the process are reduced due to a large temperature change. There are still problems to be improved.

As one means for solving such a problem, it is conceivable to mount an electrostatic chuck on a substrate mounting stage heated to a high temperature. However, in order to mount the electrostatic chuck on the substrate mounting stage,
There is a major problem of how to join the heated substrate mounting stage and the dielectric material constituting the electrostatic chuck, and this problem has hindered the practical use of the substrate mounting stage equipped with the electrostatic chuck. . That is, in a substrate mounting stage of a high-temperature heating specification, when the substrate is suction-fixed onto the substrate mounting stage via an electrostatic chuck, it is necessary to efficiently transmit heat to the substrate. Therefore, it is necessary that the substrate mounting stage and the electrostatic chuck are joined in a state of good heat conduction.

Conventionally, aluminum (Al) has been used as a material of a substrate mounting stage in a substrate processing apparatus such as an etching apparatus, a CVD apparatus, and a sputtering apparatus because of its high thermal conductivity and ease of processing. Many. The coefficient of linear expansion of aluminum is about 23 × 10 ^-6 / K
It is. In general, a ceramic material is used as a dielectric constituting the electrostatic chuck. Therefore,
When the substrate mounting stage and the electrostatic chuck are directly joined to each other, the heating of the substrate mounting stage is caused by a difference in linear expansion coefficient between the ceramic material forming the electrostatic chuck and the aluminum forming the substrate mounting stage. There is a problem that the ceramic chuck is broken as a result of damage such as cracking of the ceramic material due to cooling.

For this reason, at present, the electrostatic chuck is fixed to the substrate mounting stage by a method such as screwing. However, in such a structure, when the inside of the substrate processing apparatus is in a decompressed state, the joint interface between the electrostatic chuck and the substrate mounting stage is vacuum insulated, and the substrate mounting stage and the substrate via the electrostatic chuck are insulated. As a result, the efficiency of heat exchange between the substrate and the substrate deteriorates, so that the substrate receives heat from the plasma, and the temperature of the substrate rises above a set temperature. Therefore, for example, when a substrate is formed, the film quality and film thickness of the substrate are determined by the position on the substrate mounting stage (for example, the central portion and the peripheral portion of the substrate mounting stage).
And the film quality of the substrate varies in the thickness direction of the substrate. In addition, for example, when a substrate mounted on the substrate mounting stage is etched, there is a problem that the shape of the substrate after etching varies depending on the position on the substrate mounting stage.

When a mounting stage provided with a conventional electrostatic chuck is heated to a high temperature, cracks occur in the dielectric member due to the difference between the linear expansion coefficient of the mounting stage and the linear expansion coefficient of the dielectric member. Means for solving the problem that the function as an electrostatic chuck is lost, for example, is disclosed in JP-A-10-32239. The electrostatic chuck stage disclosed in this patent publication is formed by joining a ceramic sintered body plate for an electrostatic chuck and a composite plate of ceramic and aluminum by solder or brazing material. By using this electrostatic chuck stage, plasma etching or the like can be performed under excellent temperature control at a high temperature. However, when processing a large-area substrate, it is extremely difficult to produce a large-area composite plate of ceramic and aluminum.

Accordingly, an object of the present invention is to provide a substrate mounting stage which can avoid the occurrence of damage due to a difference in thermal expansion between materials, can sufficiently withstand use at high temperatures, and can be easily manufactured, and a manufacturing method thereof. An object of the present invention is to provide a method and a substrate processing method using such a substrate processing apparatus.

[0012]

According to a first aspect of the present invention, there is provided a substrate mounting stage comprising a composite member, having an electrostatic chuck function, and having temperature control means. The member includes a base material in which the structure of the ceramic member is filled with an aluminum-based material, and a ceramic layer formed on the surface of the base material by a thermal spraying method. It has a structure in which a second ceramic layer is laminated, and an electrode for causing the ceramic layer to exhibit an electrostatic chuck function is formed between the first ceramic layer and the second ceramic layer. It is characterized by the following. That is, the substrate mounting stage of the present invention has a so-called bipolar electrostatic chuck.

In the substrate mounting stage of the present invention, in order for the ceramic layer to exhibit an electrostatic chucking function,
A positive or negative DC current is applied to the electrodes.

In the substrate mounting stage of the present invention, the temperature control means can be a heater. The heater may be provided outside the composite member or inside the base material. In the latter case, the linear expansion coefficient of the base material is α ₁ [unit: 1
0 ⁻⁶ / K], the linear expansion coefficient α _H [unit: 10 ⁻⁶ / K] of the material constituting the heater is (α ₁ -4) ≦ α _H ≦ (α ₁
+4) is preferably satisfied. Here, the material forming the heater means a material forming a portion (for example, a sheath tube) of the heater in contact with the base material. The same applies to the following. Alternatively, the temperature control means, flow temperature control heat medium disposed in the interior of the base material is composed of a pipe, ₁ linear expansion coefficient of the base material alpha [Unit: 10 ^{- 6} / K] and Then, the linear expansion coefficient α _P [unit: 10 ⁻⁶ / K] of the pipe is (α ₁
-4) ≦ α _P ≦ (α ₁ +4).
When the linear expansion coefficient α _{1 of the} base material and the linear expansion coefficients α _H and α _{P of} the material and the pipe constituting the heater satisfy these relationships, it is possible to effectively prevent the ceramic layer from being damaged. be able to.

In general, the coefficient of linear expansion α is represented by L,
Assuming that the length of the object at 0 ° C. is L ₀ and θ is the temperature, α = (dL / dθ) / L ₀ , and the unit is K ⁻¹ (1 / K). In the description, 10 ^-6 / K
The linear expansion coefficient is expressed in units of. Hereinafter, when the linear expansion coefficient is described, the unit may be omitted in some cases.

A method for manufacturing a substrate mounting stage according to the present invention for achieving the above object is a substrate mounting stage comprising a composite member, having an electrostatic chuck function, and provided with a temperature control means. The composite member includes a base material in which the structure of the ceramic member is filled with an aluminum-based material, and a ceramic layer formed on the surface of the base material by a thermal spraying method. It has a structure in which a ceramic layer and a second ceramic layer are laminated, and an electrode is formed between the first ceramic layer and the second ceramic layer so that the ceramic layer exerts an electrostatic chuck function. A method for producing a substrate mounting stage, comprising:
(A) a step of filling an aluminum-based material in the structure of a ceramic member to thereby prepare a base material in which the structure of the ceramic member is filled with an aluminum-based material;
After forming a first ceramics layer on the surface of the base material by a thermal spraying method, an electrode is formed on the first ceramics layer, and then on the first ceramics layer including the electrode by a thermal spraying method. Forming a second ceramics layer.

In the method of manufacturing a substrate mounting stage according to the present invention, as a method of forming an electrode, a spraying method, a brazing method,
A plating method or a printing method can be exemplified.

The substrate mounting stage of the present invention or a product
In the manufacturing method, the coefficient of linear expansion of the base material is α₁[Unit: 10
^-6/ K], the coefficient of linear expansion of the first ceramic layer
α_{twenty one}[Unit: 10^-6/ K] is (α₁-4) ≦ α_{twenty one}≤ (α₁
+4), and the coefficient of linear expansion α of the second ceramics layer_{twenty two}
[Unit: 10^-6/ K] is (α₁-4) ≦ α_{twenty two}≤ (α₁+
It is preferable to satisfy 4). This allows, for example,
Even when used at a high temperature of about 650 ° C, the coefficient of linear expansion of the base material
α₁And coefficient of linear expansion of ceramic layer α_{twenty one}, Α_{twenty two}Due to the difference in
To ensure that the damaged ceramic layer is not damaged.
It becomes possible. Also, the coefficient of linear expansion of the material constituting the electrode [
Rank: 10^-6/ K] also gives the coefficient of linear expansion of the base material as α ₁[Unit: 1
0^-6/ K], (α₁-4) and (α)₁+4)
It is desirable to be within the following range.
The thickness of the electrode should not affect the ceramic layer and the base material.
If the material is thin, the coefficient of linear expansion of the material may fall outside this range.
Even if they are, problems are unlikely to occur.

In the substrate mounting stage or the method of manufacturing the same according to the present invention, the composition of the ceramic member constituting the base material is cordierite ceramic and the composition of the aluminum-based material constituting the base material is aluminum (Al) and silicon. (Si), the first ceramic layer and the second
The material constituting the ceramic layer may be Al ₂ O ₃ . The material constituting the first ceramic layer and / or the second ceramic layer includes a linear expansion coefficient α _{21 of} the first ceramic layer and / or the second ceramic layer,
To adjust the alpha ₂₂ and electrical properties, for example, it may be added TiO _2. The volume of the cordierite ceramic and the aluminum-based material is set so as to satisfy the relationship of (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +4). It is desirable to determine the ratio. Alternatively, the volume ratio of cordierite ceramics / aluminum-based material is 25/75 to 75/25, preferably 25/7.
It is desirable to set it to 5 to 50/50. With such a volume ratio, not only the control of the coefficient of linear expansion of the base material, but also the base material has a value closer to the metal than the electrical conductivity or thermal conductivity of pure ceramics. As a result, not only the application of a voltage to such a base material,
A bias can also be applied. Further, based on an aluminum-based material, the aluminum-based material contains 12 to 35% by volume, preferably 16 to 35% by volume, and more preferably 20 to 35% by volume of silicon. α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ −
_{4) ≦ α 2 2 ≦ (} α 1 +4) desirable for satisfying the relationship. Incidentally, actually, aluminum (Al) is contained in the structure of the ceramic member made of cordierite ceramics.
And silicon (Si), and aluminum (Al)
Although silicon (Si) is not contained therein, in order to express the volume ratio of aluminum (Al) to silicon (Si) in an aluminum-based material, the expression that aluminum-based material contains silicon is used. Is used. The same applies to the following.

When the composition of the ceramic member forming the base material is cordierite ceramics and the composition of the aluminum-based material forming the base material is aluminum (Al) and silicon (Si), the above step (A) is performed in A ceramic member composed of porous cordierite ceramics is placed in a container, and an aluminum-based material composed of molten aluminum and silicon is poured into the container, and the ceramic member is formed by high-pressure casting. Preferably, the method comprises a step of filling an aluminum-based material. In this case, the ceramic member is, for example, a die press molding method,
Forming cordierite ceramics by isostatic pressing (also called CIP method or rubber press forming method), casting method (also called slip casting method), or slurry casting method, and then firing (sintering). Can be obtained by:

The ceramic member can be prepared by forming cordierite ceramic powder and then firing the same. However, a mixture of cordierite ceramic powder and cordierite ceramic fibers is fired (sintered). This is preferable in order to obtain a porous ceramic member and to prevent the ceramic member from being damaged when the base material is manufactured. In the latter case, the ratio of the cordierite ceramic fibers in the fired body (sintered body) is desirably 1 to 20% by volume, preferably 1 to 10% by volume, and more preferably 1 to 5% by volume. The average particle diameter of the cordierite ceramic powder is 1 to 100 μm, preferably 5 to 50 μm, more preferably 5 to 10 μm, and the average diameter of the cordierite ceramic fibers is 2 to 10 μm, preferably 3 to 5 μm. The average length is desirably 0.1 to 10 mm, preferably 1 to 2 mm. Further, a mixture of cordierite ceramics powder and cordierite ceramics fiber is mixed with 8
00 to 1200 ° C, preferably 800 to 1100
It is desirable to fire (sinter) at ゜ C. The porosity of the ceramic member is 25 to 75%, preferably 5 to 75%.
It is desirably 0 to 75%.

The temperature of the ceramic member when the molten aluminum material is poured into the container is set to 500 to 1000 ° C., preferably 700 to 800 ° C.
When the temperature of the aluminum-based material at the time of pouring the molten aluminum-based material into the container is set to 700 to 1000 ° C., preferably 750 to 900 ° C., The absolute pressure to be applied is desirably 200 to 1500 kgf / cm ² , preferably 800 to 1000 kgf / cm ² .

Alternatively, the composition of the ceramic member forming the base material is aluminum nitride (AlN), and the composition of the aluminum-based material forming the base material is aluminum (A
l) or aluminum (Al) and silicon (Si), and the material constituting the first ceramic layer and the second ceramic layer is Al ₂ O ₃ or aluminum nitride (Al).
N). In addition, the material constituting the first ceramic layer and / or the second ceramic layer is adjusted to have linear expansion coefficients α ₂₁ and α ₂₂ and electric characteristics of the first ceramic layer and / or the second ceramic layer. For this purpose, for example, TiO ₂ or Y _x O _y may be added. in this case,
(Α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ -4) ≦ α
It is preferable to determine the volume ratio between aluminum nitride and the aluminum-based material so as to satisfy the relationship of ₂₂ ≦ (α ₁ +4). Alternatively, the volume ratio of the aluminum nitride / aluminum-based material is desirably 40/60 to 80/20, preferably 60/40 to 70/30. By adopting such a volume ratio, not only the control of the coefficient of linear expansion of the base material, but also the base material has a value closer to the metal than the electrical conductivity or thermal conductivity of pure ceramics, A bias can be applied to such a base material as well as a voltage. In addition, when the composition of the aluminum-based material constituting the base material is aluminum and silicon, the aluminum-based material contains 12 to 3 silicon.
5% by volume, preferably 16 to 35% by volume, and more preferably 20 to 35% by volume, (α ₁ −
4) It is desirable to satisfy ≦ α ₂ ≦ (α ₁ +4).

When the composition of the ceramic member forming the base material is aluminum nitride (AlN) and the composition of the aluminum-based material forming the base material is aluminum (Al) or aluminum (Al) and silicon (Si), Step (A) is a step of infiltrating a molten aluminum or an aluminum-based material composed of aluminum and silicon into a ceramic member formed from aluminum nitride particles in a non-pressurized state based on a non-pressurized metal infiltration method. It preferably comprises In addition, the ceramic member is, for example, a mold press molding method, a hydrostatic molding method, a casting molding method,
Alternatively, after forming by a slurry casting method, 500
To 1000 ° C, preferably 800 to 1000 ° C
By sintering at a temperature of In this case, the average particle size of the aluminum nitride particles is 1
It is desirable that the thickness be 0 to 100 μm, preferably 10 to 50 μm, and more preferably 10 to 20 μm.

Alternatively, the composition of the ceramic member forming the base material is silicon carbide (SiC), and the composition of the aluminum-based material forming the base material is aluminum (Al) or aluminum (Al) and silicon (Si); The material forming the first ceramic layer and the second ceramic layer can be Al ₂ O ₃ or aluminum nitride (AlN). The first ceramic layer and / or the second
In order to adjust the linear expansion coefficients α ₂₁ and α ₂₂ and the electrical characteristics of the first ceramic layer and / or the second ceramic layer, for example, Ti
O ₂ may be added. In this case, (α ₁ -4) ≦ α ₂₁ ≦
It is preferable to determine the volume ratio between silicon carbide and the aluminum-based material so as to satisfy (α ₁ +4) and (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +4). Alternatively, the volume ratio of silicon carbide / aluminum-based material is set to 40/60 to 8
0/20, preferably 60/40 to 70/30. By adopting such a volume ratio, not only the control of the coefficient of linear expansion of the base material, but also the base material has a value closer to the metal than the electrical conductivity or thermal conductivity of pure ceramics, A bias can be applied to such a base material as well as a voltage. still,
When the composition of the aluminum-based material constituting the base material is aluminum and silicon, the aluminum-based material contains silicon in an amount of 12 to 35% by volume, preferably 16 to 35% by volume, and more preferably 20 to 35% by volume. That (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ −
4) It is desirable to satisfy ≦ α ₂₂ ≦ (α ₁ +4).

In this case, in the step (A), based on a non-pressurized metal infiltration method, molten aluminum or an aluminum-based material containing aluminum and silicon in a ceramic member formed from silicon carbide particles is subjected to non-pressurizing. Preferably, the method comprises a step of infiltrating in a state. Alternatively, in the step (A), a ceramic member composed of silicon carbide is placed in a container, and molten aluminum or an aluminum-based material composed of aluminum and silicon is poured into the container. And filling the ceramic member with an aluminum-based material by heating. In this case, when the molten aluminum-based material is poured into the container, the temperature of the ceramic member is set to 500 to 1
2,000 ° C, and the absolute pressure applied when filling the ceramic material with the aluminum-based material by the high pressure casting method is 20
It is desirable to set it to 0 to 1500 kgf / cm ² .
The ceramic member is formed, for example, by a die press molding method, a hydrostatic molding method, a casting method, or a slurry casting method, and then fired at a temperature of 500 to 1000 ° C, preferably 800 to 1000 ° C. Can be obtained by: In this case, the coefficient of linear expansion of the base material is α
₁ [unit: 10 ^-6 / K] when the linear expansion coefficient of the first and second ceramic layers alpha _21, alpha ₂₂ [unit: 10 ^-6 /
K] is (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ −
4) It is desirable to determine the volume ratio between the silicon carbide particles and the aluminum-based material so as to satisfy ≦ α ₂₂ ≦ (α ₁ +4). Alternatively, the volume ratio of silicon carbide particles / aluminum-based material is desirably 40/60 to 80/20, preferably 60/40 to 70/30.
The average particle size of the silicon carbide particles is 1 to 100 μm, preferably 10 to 80 μm, and more preferably 15 to 6 μm.
Desirably, it is 0 μm. When the composition of the aluminum-based material constituting the base material is aluminum and silicon, the aluminum-based material contains silicon in an amount of 12 to 35% by volume, preferably 16 to 35% by volume, and more preferably 2 to 35% by volume.
0 to 35% by volume, (α ₁ -4) ≦
α ₂₁ ≦ (α ₁ +4) and (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +
It is desirable to satisfy 4).

Alternatively, the composition of the ceramic member forming the base material is aluminum oxide (Al ₂ O ₃ ), and the composition of the aluminum-based material forming the base material is aluminum (Al) or aluminum (Al) and silicon (Al). Si), and the material constituting the first ceramic layer and the second ceramic layer can be Al ₂ O ₃ . In addition, the material constituting the first ceramic layer and / or the second ceramic layer is adjusted to have linear expansion coefficients α ₂₁ and α ₂₂ and electric characteristics of the first ceramic layer and / or the second ceramic layer. For this purpose, for example, TiO ₂ may be added.
In this case, (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁
It is preferable to determine the volume ratio between aluminum oxide and the aluminum-based material so as to satisfy -4) ≦ α ₂₂ ≦ (α ₁ +4). Alternatively, the volume ratio of aluminum oxide / aluminum-based material is set to 50/50 to 90/1.
0, preferably 70/30 to 85/15. By adopting such a volume ratio, not only the control of the coefficient of linear expansion of the base material, but also the base material has a value closer to the metal than the electrical conductivity or thermal conductivity of pure ceramics, A bias can be applied to such a base material as well as a voltage. When the composition of the aluminum-based material constituting the base material is aluminum and silicon, the aluminum-based material contains 12
To 35% by volume, preferably 16 to 35% by volume, more preferably 20 to 35% by volume,
(Α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ -4) ≦ α
It is desirable to satisfy ₂₂ ≦ (α ₁ +4). The average particle size of aluminum oxide is desirably 1 to 100 μm, preferably 10 to 80 μm, and more preferably 10 to 60 μm.

In the case where the composition of the ceramic member constituting the base material is aluminum oxide and the composition of the aluminum-based material forming the base material is aluminum (Al) or aluminum (Al) and silicon (Si), the above steps ( A) is a method in which a ceramic member having a composition of porous aluminum oxide is disposed in a container, and molten aluminum or an aluminum-based material having a composition of aluminum and silicon is poured into the container, and the ceramic is formed by high-pressure casting. Preferably, the method comprises a step of filling the member with an aluminum-based material. In this case, the temperature of the ceramic member at the time of pouring the molten aluminum-based material into the container is set at 5 ° C.
The temperature is preferably set to 00 to 1000 ° C., and the absolute pressure applied when filling the ceramic material with the aluminum material by the high-pressure casting method is preferably set to 200 to 1500 kgf / cm ² . Alternatively, in the step (A) described above, based on a non-pressurized metal infiltration method, a ceramic member formed from aluminum oxide particles is melted into aluminum or an aluminum-based material containing aluminum and silicon in a non-pressurized state. It is preferred that the method comprises a step of infiltrating with water.
Incidentally, the ceramic member is, for example, a mold press molding method,
It can be obtained by performing baking (sintering) after forming by a hydrostatic molding method, a casting method, or a slurry casting method.

In the substrate mounting stage or the method of manufacturing the same according to the present invention, the composite member is composed of a base material in which the structure of the ceramic member is filled with an aluminum-based material. Thus, for example, the coefficient of linear expansion can be adjusted to an intermediate value. Therefore, the occurrence of damage to the ceramic layer due to the thermal expansion between the base material and the ceramic layer can be avoided, and the composite member can be reliably used at a high temperature. In addition, since the ceramic layer is formed on the surface of the base material by the thermal spraying method, a large-area composite member can be manufactured, and it is possible to easily cope with an increase in the area of the base. Further, since the base material has a high thermal conductivity, it is possible to efficiently heat the base. Further, since the ceramic layer is provided, it is possible to prevent the occurrence of metal contamination and the occurrence of corrosion of the composite member due to, for example, a halogen-based gas. Note that (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ −
4) By satisfying the relationship of ≦ α ₂₂ ≦ (α ₁ +4), even when used at a high temperature of, for example, about 650 ° C., the linear expansion coefficient α _{1 of the} base material and the linear expansion coefficient α _{21 of the} ceramic layer are obtained. , Α ₂₂
It is possible to reliably prevent the ceramic layer from being damaged due to the difference between the two.

A substrate processing method according to the present invention for achieving the above object uses a substrate processing apparatus for processing a substrate, the substrate processing apparatus includes a substrate mounting stage, and the substrate mounting stage comprises: It is composed of a composite member, has an electrostatic chuck function, is provided with a temperature control means, the composite member has a base material in which the structure of the ceramic member is filled with an aluminum-based material, and a surface of the base material A ceramic layer formed by a thermal spraying method, wherein the ceramic layer has a structure in which a first ceramic layer and a second ceramic layer are laminated, and the first ceramic layer and the second ceramic layer An electrode for exerting an electrostatic chuck function on the ceramic layer is formed between the ceramic layer and the substrate, and the substrate is fixed on the ceramic layer of the substrate mounting stage by the electrostatic chuck function. The temperature of the mounting stage in a state in which was controlled by temperature control means, and performs processing on the substrate.

In the substrate processing method stage of the present invention, a positive or negative direct current is applied to the electrodes in order to cause the ceramic layer to exhibit an electrostatic chuck function.

The treatment for the substrate may be an etching process including a plasma etching process, a CVD process including a plasma CVD process, or a sputtering process including a soft etching process for the substrate. In the case of plasma etching, the temperature of the substrate mounting stage when processing the substrate is from room temperature to 650 ° C., preferably 100 to 400 ° C., and more preferably 100 to 300 ° C. In case, normal temperature to 65
0 ° C., preferably 100 to 500 ° C., more preferably 200 to 500 ° C., and in the case of a sputtering process, controlled at room temperature to 650 ° C., preferably 200 to 600 ° C., more preferably 300 to 500 ° C. It is desirable to have been. In addition, it is preferable that a temperature control means is provided on the substrate mounting stage, and the temperature control means is constituted by a heater. The heater may be provided outside the composite member, or may be provided inside the base material. Alternatively, the temperature control means is preferably constituted by a pipe through which a heat medium for temperature control flows. Here, as the substrate mounting stage, specifically, the above-described substrate mounting stage of the present invention may be used.

As the substrate in the present invention, a compound semiconductor or semi-insulating substrate such as a silicon semiconductor substrate or a GaAs substrate, a semiconductor substrate having an SOI structure, an insulating substrate made of glass or quartz, a semiconductor substrate, a semi-insulating substrate or an insulating substrate Examples include various insulating layers and insulating films formed on a conductive substrate, conductive thin films, metal thin films, metal compound thin films, and laminates thereof. As the insulating layer or the insulating film, SiO
₂ , BPSG, PSG, BSG, AsSG, PbSG,
SbSG, NSG, SOG, LTO (Low Temperature
Oxide, low-temperature CVD-SiO ₂ ), SiN, SiON, a known material such as a low dielectric constant insulating material having a relative dielectric constant of 3.5 or less (for example, polyarylether, cycloperfluorocarbon polymer, benzocyclobutene), or A material obtained by laminating these materials can be exemplified. Examples of the conductive thin film include polycrystalline silicon doped with impurities. Further, as a metal thin film or a metal compound thin film, Cu, Ti, TiN, B
ST (barium strontium titanium oxide), STO (strontium titanium oxide), SBT (strontium barium tantalum oxide)
Oxide), Pt, Al, for example, an aluminum alloy containing copper or silicon, a high melting point metal such as tungsten, and various silicides. Further, the present invention can be applied to materials in fields other than the field of manufacturing semiconductor devices, such as copper formed or laminated on a plastic film such as a polyimide film.

In the plasma etching method using an etching gas, deposits of an etching product are excessively deposited on a side wall or a top plate of a chamber of an etching apparatus, and as a result, this deposit becomes a particle source. ,
There is a possibility that etching of the base may be impaired. That is, the etching product accumulates on the chamber side wall and the top plate before reaching the exhaust unit provided in the etching apparatus. Therefore, if the etching is repeated, the etching product deposited on the side wall of the chamber or the top plate may peel off and become a particle source, resulting in a problem that the particle level is deteriorated. Alternatively, when a precursor such as a polymer is deposited on the side wall of the etching apparatus during the etching process of the oxide film, the side wall or the like acts as a scavenger of the fluorocarbon polymer precursor, and as a result, for example, the carbon / There also arises a problem that the ratio of fluorine varies and the etching characteristics deteriorate. Therefore, a method is employed in which the side walls and the like are heated to a high temperature to desorb precursors that have entered and deposited on the side walls and the like of the etching apparatus, thereby preventing deposition.

In such a case, the side wall of the chamber or the top plate, which is a part of the substrate processing apparatus, is applied to a base material in which the structure of a ceramic member is filled with an aluminum-based material, and the surface of the base material is sprayed. It is preferable to manufacture from a composite material comprising the ceramic layer provided in the above. Such a composite material can have substantially the same configuration as the above-described composite member except that the ceramic layer is a single layer and no electrode is formed, and can be substantially the same as the above-described composite member. It can be manufactured by the same manufacturing method. Incidentally, the linear expansion coefficient of the base material alpha _'1 [unit: 10 ^-6 / K] when the linear expansion coefficient alpha of the ceramic layer' ₂ [unit: 10 ^-6 / K] is (alpha _'1 -4 ) ≦ α ′ ₂ ≦ (α ′ ₁ +4). The composite material is provided with a temperature control means, which preferably comprises a heater. The heater may be provided outside the composite material or inside the base material. In the latter case, the linear expansion coefficient of the base material is α ′ ₁ [unit: 10 ⁻⁶ / K] In this case, the linear expansion coefficient α _H [unit: 10 ⁻⁶ / K] of the material constituting the heater preferably satisfies the relationship of (α ′ ₁ -4) ≦ α _H ≦ (α ′ ₁ +4). . Alternatively, a pipe for flowing a heat medium for temperature control may be provided inside the base material. In this case, when the linear expansion coefficient of the base material is α ′ ₁ [unit: 10 ⁻⁶ / K], The coefficient of linear expansion of the pipe α _P [unit: 10 ⁻⁶ / K] is (α ′ ₁ -4)
It is preferable to satisfy ≦ α _P ≦ (α ′ ₁ +4). still,
Since the ceramic layer is formed on the surface of the base material by the thermal spraying method, the substrate processing apparatus can be easily manufactured even if the dimensions of the substrate processing apparatus are large. In some cases, a plate-like or hollow cylindrical ceramic layer may be attached to the surface of the base material by a brazing method.

As described above, by forming the chamber side wall and the top plate from the composite material, the base material has an intermediate property between the ceramic member and the aluminum-based material. It can be adjusted to a typical value. Therefore, it is possible to avoid the occurrence of damage to the ceramic layer due to thermal expansion between the base material and the ceramic layer, and to set the chamber at a sufficiently high temperature to prevent etching products from depositing on the chamber side walls and the top plate. Even if the side wall and the top plate are held, or if the chamber side wall and the top plate are held at a temperature high enough to remove the precursor, the ceramic layer is not damaged, and the chamber side wall and the top plate are not damaged. The plate can be reliably heated to the desired temperature.

The temperature of the side wall and / or the top plate when performing the plasma etching process or the plasma CVD process on the substrate is from room temperature to 650 in the case of the plasma etching process.
゜ C, preferably 100-400 ゜ C, more preferably 100-300 、 C, for plasma CVD processing,
It is desirable that the temperature is controlled at room temperature to 650 ° C, preferably 100 to 500 ° C, and more preferably 200 to 500 ° C.

In the conventional etching apparatus, the side wall of the chamber is usually made of stainless steel or aluminum. Then, for example, during the etching process, in order to prevent the occurrence of metal contamination due to direct exposure to plasma and the occurrence of corrosion of the chamber side wall due to halogen-based gas, the chamber side wall made of aluminum is formed. An Al ₂ O ₃ layer (alumite layer) is formed on the surface. When the chamber side wall is made of stainless steel, Al ₂ O ₃
Reflector is disposed near the side wall of the chamber inside the etching apparatus. When the high temperature heating of the chamber side wall is performed in such a state, when the chamber side wall is made of aluminum, it is formed on the surface of the chamber side wall due to a difference in linear expansion coefficient between aluminum and Al ₂ O ₃ . Cracking or the like is likely to occur in the Al ₂ O ₃ layer. Also, Al ₂ O ₃
When a reflector made of aluminum is arranged near the side wall of the chamber inside the etching apparatus, it is difficult to sufficiently heat the reflector from outside the etching apparatus. That is,
It is difficult to heat the reflector to a temperature at which all the etching products incident on the reflector are released from the reflector, or a temperature at which all the precursors incident on the reflector are released from the reflector, at most about 100 ° C. The reflector can only be heated up to this point.

Alternatively, for example, when performing a plasma etching process on a substrate, a part of the substrate processing apparatus is composed of a parallel plate upper counter electrode, and the upper counter electrode is made of aluminum-based material in the structure of the ceramic member. It is preferable to manufacture the composite material from a base material filled with a material and a ceramic layer formed on the surface of the base material by a thermal spraying method. Such a composite material can have substantially the same configuration as the above-described composite member except that the ceramic layer is a single layer and no electrode is formed, and can be substantially the same as the above-described composite member. It can be manufactured by the same manufacturing method. The coefficient of linear expansion of the base material is α ″ ₁ [unit: 10 ⁻⁶
/ K], the coefficient of linear expansion of the ceramic layer α ″
₂ [unit: 10 ⁻⁶ / K] is (α ″ ₁ −4) ≦ α ″ ₂ ≦
It is preferable that (α ″ ₁ +4) be satisfied.
The upper counter electrode is preferably provided with a temperature control means, and more preferably, the temperature control means is constituted by a heater. Thus, for example, the upper counter electrode can be heated to a temperature at which the precursor incident on the surface of the upper counter electrode is separated from the upper counter electrode. The heater may be disposed outside the composite material or inside the base material. In the latter case, the linear expansion coefficient of the base material is α ″ ₁ [unit: 10 ⁻⁶ / K] , The linear expansion coefficient α _{H of} the material constituting the heater [unit:
10 ⁻⁶ / K] preferably satisfies (α ″ ₁ −4) ≦ α _H ≦ (α ″ ₁ +4). By satisfying this relationship between the linear expansion coefficient α ″ _{1 of the} base material and the linear expansion coefficient α _H of the material constituting the heater, it is possible to effectively prevent the ceramic layer from being damaged. Since the ceramic layer is formed on the surface of the base material by thermal spraying, the upper counter electrode can be easily manufactured even if the size of the substrate processing apparatus is large. The temperature of the upper counter electrode when performing plasma etching on the substrate may be from room temperature to 400 ° C., preferably from 50 to 4 ° C.
It is desirable that the temperature is controlled at 00 ° C, more preferably at 200 to 350 ° C.

[0040]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings based on embodiments of the present invention (hereinafter, abbreviated as embodiments).

(Embodiment 1) In the substrate processing apparatus according to Embodiment 1, an etching process is performed on a substrate formed on a silicon semiconductor substrate. This substrate processing apparatus includes a substrate mounting stage. FIG. 1A is a schematic cross-sectional view of the substrate mounting stage 10 constituted by a composite member, and FIG. 1B is an enlarged cross-sectional view of the top end of the composite member. This substrate mounting stage 10
It is composed of a composite member 11 and has an electrostatic chuck function,
Temperature control means is provided. The composite member 11 includes a base material 12 (corresponding to a temperature control jacket) in which the structure of the ceramic member is filled with an aluminum-based material, and a ceramic layer 13 provided on the surface of the base material 12 by a thermal spraying method.
Consisting of The shape of the base material 12 is a disk. The ceramic layer 13 has a structure in which a first ceramic layer 130A and a second ceramic layer 130B are laminated.
Ceramic layer 130A and second ceramic layer 13
0B, an electrode 14 for exerting an electrostatic chuck function on the ceramic layer is formed, and a substrate (for example, a semiconductor substrate 40) is fixed on the substrate mounting stage 10 by the electrostatic chuck function. , Substrate mounting stage 10
The substrate is processed while the temperature of the substrate is controlled by the temperature control means.

In the first embodiment, the composition of the ceramic member constituting the base material 12 is cordierite ceramic. Here, cordierite ceramics means about 13% by weight of MgO, about 52% by weight of SiO ₂ ,
It is a ceramic whose composition ratio is adjusted so that Al ₂ O ₃ is about 35% by weight. The coefficient of linear expansion of cordierite ceramics is 0.1 × 10 ⁻⁶ / K.

The composition of the aluminum-based material constituting the base material 12 is aluminum (Al) and silicon (Si).
It is. In the first embodiment, the aluminum-based material contains 20% by volume of silicon based on the aluminum-based material. The ceramic member was a fired body of a mixture of cordierite ceramic powder and cordierite ceramic fiber, and the ratio of the cordierite ceramic fiber in the fired body was 5% by volume. Here, the average particle diameter of the cordierite ceramic powder is 10 μm, the average diameter of the cordierite ceramic fibers is 3 μm, and the average length is 1 mm.
The porosity of the ceramic member is about 50%, and the pore diameter is about 1 to 2 μm. Therefore, the volume ratio of cordierite ceramics / aluminum-based material is about 1/1. The linear expansion coefficient of the base material 12 having such a configuration is 100 to
About 10.6 × 10 ⁻⁶ / K at an average value at 300 ° C.
It is. That is, α ₁ = 10.6. The volume ratio of cordierite ceramics / aluminum material is about 1/1
Therefore, the base material 12 has a value closer to the metal than the electrical conductivity or the thermal conductivity of pure ceramics.

The first ceramic layer 130A and the second
The material constituting the ceramic layer 130B is TiO_TwoBut
Al added about 2.5% by weight_TwoO_ThreeAnd The first sera
Mix layer 130A is formed on the surface of base material 12 by a thermal spraying method.
The second ceramic layer 130B is formed of an electrode
Spray coating on the first ceramic layer 130A including
It is formed. First ceramic of such composition
Expansion of the first ceramic layer 130A and the second ceramic layer 130B.
The tension ratio is an average value at 100 to 300 ° C. and is about 9 ×
10^-6/ K. Therefore, α_{twenty one}, Α_{twenty two}Is about 9,
Line of first and second ceramic layers 130A, 130B
Expansion coefficient α_{twenty one}, Α_{twenty two}Is (α₁-4) ≦ α_{Two 1}≤ (α₁+4)
And (α₁-4) ≦ α_{twenty two}≤ (α₁+4).
In addition, Al _TwoO_ThreeIts own linear expansion coefficient is about 8 × 10^-6/ K
is there. Also, Al_TwoO_ThreeTiO2_TwoAbout 2.5% by weight
By doing so, the first and second ceramic layers 13
0A and 130B are set to 10¹¹Ω / □ order
Can be adjusted. This allows the ceramic
The electrode layer 13 acts as a dielectric and has an electrode provided therein.
14 enables it to function as an electrostatic chuck.
Can be. Reasons for adjusting volume resistivity in this way
Means that the ceramic layer 13 is 10¹¹Over Ω / □ order
When used as an electrostatic chuck, the ceramic layer
13 became too weak, and the substrate was
3 may be difficult to be sufficiently adsorbed.
You. On the other hand, when the ceramic layer 13¹¹Ω / □ order
Below, when the substrate mounting stage 10 is used at a high temperature,
The resistance value of the ceramic layer 13 further decreases, and
A current may be generated at the interface with the Lamix layer 13.
In general, depending on the use conditions, the ceramic layer
Volume resistivity of 10¹¹-10¹⁶Ω / □ expected
Good.

A temperature control means is provided (embedded) inside the base material 12 of the substrate mounting stage 10. The temperature control means is composed of a heater 15 and a pipe 16 through which a heat medium for temperature control flows. As the heater 15, a large-sized, large-capacity sheathed heater corresponding to the area (bottom area) of the base material 12 was used. The heater 15 is a known heater including a heater body (not shown) and a sheath tube (not shown) provided outside the heater body and protecting the heater body. The heater 15 is connected to a power supply via a wiring (not shown). The thermal expansion of the heater 15 affects the substrate mounting stage 10. Therefore, the base material 12
It is preferable to use a material having values close to the linear expansion coefficients α ₁ , α ₂₁ , and α ₂₂ of the first and second ceramic layers 130A, 130B. Specifically, such as titanium and stainless steel, the coefficient of linear expansion is 9 × 10 ⁻⁶ / K to 12 × 10 ⁻⁶ /
It is preferable to use a sheath tube made of the K material.
That is, the linear expansion coefficient α _H [unit: 10 ⁻⁶ / K] of the material constituting the heater 15 (the material of the sheath tube in contact with the base material 12) is
It is preferable to satisfy (α ₁ -4) ≦ α _H ≦ (α ₁ +4). The coefficient of linear expansion of the main body of the heater 15 is not particularly limited because it does not affect the base mounting stage 10.

The pipe 16 is a heating medium supply device for temperature control.
(Not shown in FIG. 1), and
Made from alloy. Heat medium supply device for temperature control
The heating medium for temperature control supplied from the
By flowing through the pipe 16 in the inside, the substrate mounting stage 1
Zero temperature control can be performed. Thermal expansion of pipe 16
Also affects the substrate mounting stage 10. Therefore, mother
Coefficient of thermal expansion α of the material 12 and the ceramic layer 13₁, Α_{twenty one}, Α
_{twenty two}It is preferable to use a material having a value close to. Concrete
Typically, the coefficient of linear expansion is 9 such as titanium or stainless steel.
× 10^-6/ K ~ 12 × 10^-6/ K
Preferably, a pipe 16 is used. That is, the pipe 16 is
Linear expansion coefficient α of the material to be formed_P[Unit: 10^-6/ K] is
(Α₁-4) ≦ α _P≤ (α₁+4)
New

The ceramic layer 13 functions as an electrostatic chuck by applying a DC voltage to the electrode 14 of the substrate mounting stage 10 having such a configuration via wiring (not shown). The substrate mounting stage 10 has a substrate (eg, a substrate) mounted and held on the ceramic layer 13.
A pusher pin (not shown) for pushing up the semiconductor substrate) is embedded. Further, a mechanism (not shown) is attached to the pusher pin so that the pusher pin projects above the top surface of the ceramic layer 13 or is buried under the top surface.

A method of manufacturing the base mounting stage 10 constituted by the composite member 11 will be described below. The base mounting stage 10 comprises: (A) a step of filling a structure of a ceramic member with an aluminum-based material, thereby producing a base material 12 in which the structure of the ceramic member is filled with an aluminum-based material; ) The first surface of the base material 12 is sprayed by spraying.
After the first ceramic layer 130A is formed, the electrode 14 is formed on the first ceramic layer 130A, and then the second ceramic layer 130B is formed on the first ceramic layer 130A including the electrode 14 by a thermal spraying method. It is produced based on the process. In the first embodiment, in this step (A), a ceramic member having a composition of porous cordierite ceramics is disposed in a container (mold), and molten aluminum and silicon are contained in the container (mold). And a step of filling an aluminum-based material into a ceramic member by a high-pressure casting method.

A ceramic member made of a porous cordierite ceramic is made porous in a sintering process when the ceramic member is manufactured. In the first embodiment, the porous cordierite ceramic fiber is a sintered body obtained by sintering cordierite ceramic powder and cordierite ceramic fiber as the porous cordierite ceramic. A board (hereinafter, abbreviated as a fiber board) was used. Whereas general powder sintered ceramics are sintered at a high temperature of about 1200 ° C, fiberboard is about 800 ° C.
The cordierite ceramic powder is sintered so as to be in close contact with a cordierite ceramic fiber via a binder, and is made porous. Therefore, for example, by changing the volume ratio between the cordierite ceramic powder and the cordierite ceramic fiber, the porosity and the pore diameter of the obtained ceramic member having the porous cordierite ceramic are adjusted. It is possible.

To manufacture the substrate mounting stage 10, first, a first fiber board formed into a predetermined disk shape is prepared. In addition, a groove for disposing the heater 15 is formed in the first fiber board. Also, the first
A second fiber board different from the above fiber board is prepared. This second fiber board has a pipe 16
The groove for arranging is processed. Then, the first fiber board is arranged on the bottom of the container (mold), and the heater 15 is arranged in a groove provided in the first fiber board. Next, the second fiber board is placed on the first fiber board, and the pipe 16 is arranged in a groove provided in the second fiber board. Then, a third fiber board is placed on the second fiber board. In addition, holes for embedding pusher pins and the like are formed in these fiber boards in advance.

Next, the ceramic member made of the fiber board is preheated to about 800 ° C., and then heated to about 800 ° C. in a container (mold) to obtain an aluminum-based material (in a molten state). Al 80% by volume-
(20% by volume of Si). Then, a high-pressure casting method in which a high pressure of about 1 ton / cm ² is applied in the container (mold) is performed. As a result, a porous fiber board:
The structure of the ceramic member is filled with an aluminum-based material. Then, the base material 12 is produced by cooling and solidifying the aluminum-based material.

Next, the top surface of the base material 12 is polished. Thereafter, a mixed powder having a particle size of about 10 μm obtained by mixing about 2.5% by weight of TiO ₂ with Al ₂ O ₃ is sprayed on the polished surface in a molten state by a vacuum spraying method and solidified. As a result, the first ceramic layer 130A having a volume specific resistance of the order of 10 ¹¹ Ω / □ can be formed. Prior to the formation of the first ceramic layer 130A, for example, nickel (Ni-5% by weight Al) containing about 5% by weight of aluminum is thermally sprayed as a thermal spray underlayer, and the first thermal spray underlayer is formed on the thermal spray underlayer. May be formed by a thermal spraying method. Thereafter, the electrode 14 is formed on the first ceramic layer 130A using a brazing material. The planar shape of the electrode 14 is schematically shown in FIG. 1C. The electrode 14 has a so-called comb-shaped electrode shape and is of a bipolar type. FIG. 1 (C)
In FIG. 2, the electrodes 14 are hatched to clarify the electrodes 14. In addition, as a brazing material, for example, Al-Mg-
Examples include, but are not limited to, Ge-based, titanium, tin, antimony or magnesium alloys. The linear expansion coefficient [unit: 10 ⁻⁶ / K] of the brazing material constituting the electrode 14 is also (α ₁ −4), where the linear expansion coefficient of the base material is α ₁ [unit: 10 ⁻⁶ / K]. Above, (α ₁
+4) It is desirable to be within the following range, but if the thickness of the electrode is thin, no problem is likely to occur even if the linear expansion coefficient of the brazing material is out of such a range. Then, over the entire surface,
_The particle size of about 2.5% by weight of TiO ₂ mixed with ₂ O ₃ is about 10%.
By spraying a mixed powder of μm in a molten state by a vacuum spraying method and solidifying it, the second ceramic layer 1
Form 30B. Thus, the ceramic layer 13 (the first ceramic layer 130) having the electrode 14 formed therein is formed.
A and the second ceramic layer 130B) can be formed. In addition, in the figures other than FIG. 1B, the ceramic layer is represented by one layer. The ceramic layer 13 may be formed on the side surface of the base material 12 by a thermal spraying method.

In order to confirm the effect of preventing the ceramic layer 13 of the substrate mounting stage 10 thus obtained from cracking, a hot air circulating oven was used to heat the substrate mounting stage 10 as follows. A cycle test was performed.

(1) The substrate mounting stage 10 is placed in an oven, and the inside of the oven is heated to 300 ° C. over 30 minutes. (2) Hold the inside of the oven at a temperature of 300 ° C. for 20 minutes. (3) The temperature in the oven is lowered over 40 minutes to return to room temperature. (4) Take out the substrate mounting stage 10 from the oven and observe the appearance.

When these operations (1) to (4) were repeated 10 times, no change was observed in the appearance of the substrate mounting stage 10 even after the completion of the operations 10 times, and cracks and the like were found on the ceramic layer 13. It was confirmed that no damage occurred.

The substrate mounting stage 10 obtained in this manner is composed of a ceramic member made of a porous cordierite ceramic fiber board and a 80% by volume of Al.
-Si20 volume% of an aluminum-based material to fill the resulting preform is constituted by (temperature regulating jacket) 12, the linear expansion coefficient alpha ₁ of the matrix 12 first and second ceramic layers 130A, 130B Are close to the linear expansion coefficients α ₂₁ and α ₂₂ . Therefore, the degree of expansion and contraction of the base material 12 and the ceramic layer 13 due to heating and cooling of the base mounting stage 10 is almost the same. Therefore, due to the difference in the linear expansion coefficients α ₁ , α ₂₁ , α ₂₂ between these materials, the ceramic layer 13 is cracked when heated at a high temperature or when the substrate mounting stage 10 is returned from a high temperature to a normal temperature. And the like can be reliably avoided.

In the manufacture of the composite member of the first embodiment, particularly, a porous cordierite ceramics
Although a fiberboard is used, the fiberboard can withstand the impact of the aluminum-based material entering the pores during high-pressure casting. As a result, the occurrence of cracks in the fiber board can be suppressed. That is, in a ceramic member made of porous cordierite ceramic obtained by a normal powder sintering method, cracks are likely to occur during high-pressure casting. However, by using a porous cordierite ceramic fiberboard, it is possible to suppress the occurrence of cracks in the ceramic member during high-pressure casting.

Since the occurrence of cracks or the like in the fiber board during high-pressure casting can be avoided, it is possible to more reliably prevent the ceramic layer 13 provided on the surface of the base material 12 from being damaged by cracks or the like. it can. That is, even if cracks occur in the fiber board, when the aluminum-based material is filled in the structure of the ceramic member made of the fiber board, the base material 12 can be obtained as a result of the aluminum-based material acting as a kind of adhesive. . However, the thus obtained base material 12
In this case, a layer made of an aluminum-based material is formed in gaps such as cracks generated in the fiber board.
As a result, the ceramic layer 13 provided on the surface of the base material 12 cannot follow the temperature change when the base mounting stage 10 is used, and the ceramic layer 13 is easily cracked. That is, the ceramic layer 13 has a particle size of about 10 μm.
Since the mixed powder of m is sprayed and assimilated with the base material 12, it is hardly affected by the thermal expansion of the aluminum-based material itself filled in the pores of 1 to 2 μm in the fiberboard. However, the layer made of the aluminum-based material existing in the gap between the cracked portions of the fiber board has a length and a width larger than the diameter of the particles forming the ceramic layer 13. Therefore, the ceramic layer 13 due to the thermal expansion of such a layer made of an aluminum-based material
The effect on the ceramic layer becomes significant and cannot be ignored.
The probability that cracks will occur in 3 increases.

Since the ceramic layer 13 is formed on the base material 12 by the thermal spraying method, the composite member 11 having a large size can be easily manufactured. In addition, since the base material 12 and the ceramic layer 13 are further integrated, stress relaxation between the base material 12 and the ceramic layer 13 can be achieved, and heat conduction from the base material 12 to the ceramic layer 13 can be accelerated. Temperature control of the substrate held and fixed to the ceramic layer 13 can be quickly and reliably performed.

FIG. 2 is a conceptual diagram of a dry etching apparatus 20 (hereinafter simply referred to as an etching apparatus) which is a substrate processing apparatus incorporating such a substrate mounting stage 10. The etching apparatus 20 further includes a chamber 21,
An RF antenna 22, an RF antenna 23, and a multipole magnet 24 are provided.

The two RF antennas 22 are connected to the chamber 2
1 is disposed around the outside of a bell jar 25 composed of a cylindrical quartz tube provided on the upper side of the antenna, has an antenna shape for generating M = 1 mode plasma, and generates helicon wave plasma through a matching network 27. It is connected to a source 28. Outside these RF antennas 22, a solenoid coil assembly 26 composed of an inner coil and an outer coil is provided. Of the solenoid coil assembly 26, the inner coil contributes to the propagation of the helicon wave, and the outer coil contributes to the transport of the generated plasma. The RF antenna 23 is connected to the chamber 2
It is installed in a loop on one top plate 25A (made of quartz) and connected to a power supply 30 via a matching network 29. The multipole magnet 24 is provided outside the lower part of the chamber 21 and forms a cusp magnetic field for suppressing electrons from disappearing on the side wall of the chamber 21.

In the chamber 21, a substrate mounting stage 10 (see FIG. 1A) for holding and fixing the semiconductor substrate 40 is provided. Further, an exhaust port 31 for exhausting gas in the chamber 21 is connected to negative pressure means (not shown) such as a vacuum pump. The substrate mounting stage 10 is connected to a bias power supply 32 for controlling ion energy incident on a substrate (not shown in FIG. 2) formed on the semiconductor substrate 40. A DC power supply 33 is connected to the electrode 14 provided inside the ceramic layer 13 in order to exert an electrostatic attraction force. Further, the substrate mounting stage 10
The heater 15 disposed in the base material 12 is connected to a power supply 39. Further, a fluorescent fiber thermometer 36 for measuring the temperature of the semiconductor substrate 40 is provided in the etching apparatus 2.
0 is provided.

The pipe 16 disposed in the base material 12 of the base mounting stage 10 is connected to a temperature control heating medium supply device 35 via pipes 34A and 34B. The temperature control heat medium supply device 35 supplies the temperature control heat medium such as silicon oil to the pipe 16 of the base mounting stage 10 via the pipe 34A, and supplies the temperature supplied from the pipe 16 via the pipe 34B. The control heat medium is received, and the temperature control heat medium is heated or cooled to a predetermined temperature. In some cases, a chiller is incorporated in the temperature control heat medium supply device 35, and a low-temperature (eg, 0 ° C.) temperature control heat medium (refrigerant) such as Freon gas is provided in the pipes 34A, 16, 34B.
May flow. By circulating the heat medium for temperature control in the pipe 16 in this manner, the substrate mounting stage 1
The temperature of the substrate held and fixed on the substrate 0 is controlled. The pipe 34A connected to the temperature control heating medium supply device 35 includes:
A control valve 37 capable of operating at a high temperature is provided. On the other hand, a control valve 37 is also provided in a bypass pipe 34C between the pipe 34A and the pipe 34B. Then, under such a configuration, the supply amount of the heat medium for temperature control to the pipe 16 is controlled by controlling the opening / closing degree of the control valve 37. The temperature detected by the fluorescent fiber thermometer 36 is controlled by a control device (PID controller) 38.
The control device 38 determines the supply amount of the heat medium for temperature control from the difference from the preset temperature of the semiconductor substrate 40 so that the supply amount is determined in advance by experiment or calculation.

In the substrate mounting stage 10 shown in FIG. 1A, the main temperature control is usually performed by heating with the heater 15 depending on the set temperature of the semiconductor substrate 40. The temperature control of the base mounting stage 10 by the temperature control heat medium is an auxiliary temperature control for stabilizing the temperature of the semiconductor substrate 40. That is, when a plasma etching process or the like is performed, heat input from the plasma is received by the base and further by the semiconductor substrate 40, so that the heater 15
In some cases, it may be difficult to maintain the semiconductor substrate 40 at the set temperature only by the heating of the semiconductor substrate 40. In such a case,
In addition to the heating of the heater 15, a heat medium for temperature control at a temperature lower than the set temperature is caused to flow through the pipe 16 so as to offset the heat input from the plasma so as to maintain the semiconductor substrate 40 at the set temperature.
Thereby, the semiconductor substrate 40 can be stabilized at the set temperature. In FIG. 2, details of an etching apparatus such as an etching gas introduction unit and a gate valve are not shown.

If the substrate formed on the semiconductor substrate 40 is subjected to plasma etching using the etching apparatus 20 shown in FIG. 2, the semiconductor substrate 40 caused by heat input from plasma during the etching is also provided. Etc., there is almost no temperature rise, and during the etching process, the semiconductor substrate 40
Can be stably maintained at a predetermined temperature. In addition, since the temperature (for example, 250 ° C.) of the semiconductor substrate 40 can be stabilized with high precision, a favorable anisotropic shape can be formed on the base. That is, by exerting an electrostatic attraction force on the substrate mounting stage 10,
It is possible to control the temperature of the substrate with high accuracy, which was impossible with the conventional technology.

Next, a substrate processing method (specifically, a plasma etching method) using the etching apparatus 20 as the substrate processing apparatus will be described with reference to FIGS. In the substrate processing method, the copper (Cu) film 43 mainly corresponds to the substrate.

First, a Cu film 43 is formed on a base insulating layer 41 made of SiO ₂ formed on a semiconductor substrate 40 made of a silicon semiconductor substrate. Specifically, first, a TiN film 42 as an adhesion layer was formed on a base insulating layer 41 formed on the semiconductor substrate 40 by a known method by a sputtering method. Subsequently, a Cu film 43 corresponding to a substrate is formed on the TiN film 42 by a sputtering method,
Further, a TiN film 44 was formed thereon by a sputtering method.
Then, an SiO ₂ film is formed on the TiN film 44,
Further, this SiO ₂ film was patterned by a known lithography technique and etching technique to form a mask pattern 45 made of the SiO ₂ film. This state is shown in the schematic partial cross-sectional view of FIG.

Next, the semiconductor substrate 40 having the mask pattern 45 formed thereon is mounted on the substrate mounting stage 10 in the etching apparatus 20 shown in FIG. 40 is held and fixed on the substrate mounting stage 10. The substrate mounting stage 10 is heated by operating the heater 15 and flowing a heat medium for temperature control through the pipe 16, and the semiconductor substrate 40 including the Cu film 43 as a substrate is heated to a set temperature shown in Table 1 below. It was adjusted. Then, using the mask pattern 45 as an etching mask, Ti under the conditions exemplified in Table 1 below.
Plasma etching was performed on the N film 44, the Cu film 43, and the TiN film 42 to obtain a wiring composed of the Cu film 43. This state is shown in the schematic partial cross-sectional view of FIG.

[0069]

Table 1 Etching gas: Cl ₂ = 30 sccm Pressure: 0.7 Pa (5 mTorr) Power from power supply 28 (RF antenna 22): 1.5 kW (13.56 MHz) Power from power supply 30 (RF antenna 23): 1 0.5 kW (13.56 MHz) RF bias: 350 W Semiconductor substrate temperature: 250 ° C.

When the plasma etching process was performed in this manner, almost no increase in the temperature of the semiconductor substrate 40 and the like due to the heat input from the plasma was observed during the etching process. Was able to stably maintain the Cu film 43 at the set temperature (250 ° C.). Since the temperature of the semiconductor substrate 40 including the Cu film 43 can be stabilized with high accuracy in this manner, a wiring having a favorable anisotropic shape despite Cl ₂ being used alone as an etching gas. Was formed, and the processing of the Cu film 43 was successfully performed.

For comparison, only the heating of the semiconductor substrate 40 by the substrate mounting stage 10 was performed without performing the electrostatic chuck function, and the temperature change of the semiconductor substrate 40 was measured under the same conditions as shown in Table 1. Examined. As a result, the temperature of the semiconductor substrate 40 was 190 ° C., which was not sufficiently heated at the start of the etching process, and was considerably lower than the set temperature. The temperature increased with the progress of the etching process, and reached the set temperature of 250 ° C. in about 60 seconds after the start of the etching process. When the etching process was further continued, the temperature rose further due to the heat input from the plasma, and about 265 ° C. 120 seconds after the start of the etching process.
Rose to.

Accordingly, it has been confirmed that by exerting the electrostatic attraction force on the substrate mounting stage 10, it is possible to control the temperature of the substrate with high precision, which was impossible with the prior art. Further, even after the etching process was repeatedly performed and the inside of the chamber 21 was returned to normal temperature during maintenance or the like, no damage such as cracking of the ceramic layer 13 was found on the substrate mounting stage 10 at all.

In the dry etching of the Cu film, a gas such as HCl, HBr, or HI may be used alone or as a mixture in addition to Cl ₂ . H
Table 2 shows the dry etching conditions of the Cu film when using Br.

[0074]

Table 2 Etching gas: HBr = 50 sccm Pressure: 0.5 Pa Power from power supply 28 (RF antenna 22): 2.5 kW Power from power supply 30 (RF antenna 23): 2.5 kW RF bias: 300 W Semiconductor substrate temperature ： 250 ℃

(Embodiment 2) Embodiment 2 is a modification of Embodiment 1. Embodiment 2 is different from Embodiment 1 in that the composition of the ceramic member forming the base material in the composite member is aluminum nitride, and the composition of the aluminum-based material forming the base material is aluminum.

A substrate mounting stage 1 according to the second embodiment which is a part of a substrate processing apparatus constituted by a composite member.
FIG. 4A is a schematic cross-sectional view of FIG. The substrate mounting stage 10A is also composed of the composite member 11A. The composite member 11A includes a base material 12A (corresponding to a temperature control jacket) in which the structure of the ceramic member is filled with an aluminum-based material, and a ceramic layer 13A provided on the surface of the base material 12A. An electrode 14A is formed inside the ceramic layer 13A. The ceramic layer 13A also has a structure in which a first ceramic layer and a second ceramic layer are stacked.
The shape of the base material 12A is a disk. Also, unlike Embodiment 1, a heater 15A is attached to the bottom surface of base material 12A.

In the second embodiment, the base material 12A is
Aluminum nitride (A
1N). The linear expansion coefficient of aluminum nitride is 5.
1 × 10^-6/ K and a thermal conductivity of 0.235 cal /
cm · second · K. In addition, aluminum
The composition of the rubber-based material was aluminum (Al). (Α ₁
-4) ≦ α_{twenty one}≤ (α₁+4) and (α₁-4) ≦ α_{twenty two}≤
(Α₁+4) to satisfy aluminum nitride and aluminum
The volume ratio to minium is determined, and specifically,
Aluminum / aluminum volume ratio is 70/30
is there. The linear expansion coefficient of the base material 12A is 100 to 300 °.
The average value in C is 8.7 × 10^-6/ K. Immediately
C, α₁= 8.7. Ceramic layer 13A (first
Of the ceramic layer and the second ceramic layer)
Material is TiO_TwoAbout 2.5% by weight of Al_TwoO
_ThreeAnd The ceramic layer 13A is formed on the base material 1 by a thermal spraying method.
It is formed on the surface of 2A. Of the ceramic layer 13A
The structure is the same as in the first embodiment. Al_TwoO_ThreeOriginally
Linear expansion coefficient is about 8 × 10^-6/ K, but Al_TwoO_ThreeTo Ti
O _Two, The coefficient of linear expansion becomes 100
Approximately 9 × 10^-6/ K (α
_{twenty one}, Α_{twenty two}Is about 9), and the linear expansion coefficient α of the base material 12A is ₁When
The values are almost the same. As a result, the base material 12A is heated to a high temperature.
The ceramic layer 13A can also be changed by temperature change due to heat or the like.
It is possible to effectively prevent the occurrence of damage such as cracks.
Also, Al_TwoO_ThreeTiO2_TwoBy adding
The volume resistivity of the mix layer 13A is set to 10¹¹Ohm of Ω / □
Can be adjusted to the order. This allows the ceramic
Layer 13A effectively functions as an electrostatic chuck
Demonstrate.

The heater 15A is a PBN heater (pyrolytic boron nitride pyrolytic graphite heater) capable of heating up to about 500 ° C. By attaching the heater 15A to the back surface of the base material 12A, the temperature of the base material 12A can be controlled within a range from room temperature to about 500 ° C. And
When a DC voltage is applied to the electrode 14A of the base mounting stage 10A via wiring (not shown), the ceramic layer 1
3A functions as an electrostatic chuck. The base mounting stage 10A is mounted on the ceramic layer 13A.
A pusher pin (not shown) for pushing up the held base is embedded. Further, a mechanism (not shown) is attached to the pusher pin so that the pusher pin projects above the top surface of the ceramic layer 13A or is buried under the top surface.

The method of manufacturing the substrate mounting stage 10A will be described below. Basically, the base mounting stage 10A basically fills the structure of the ceramic member with an aluminum-based material, and fills the structure of the ceramic member with the aluminum-based material, similarly to the first embodiment. (B) forming a first ceramic layer on the surface of the base material 12A by thermal spraying, forming an electrode 14A on the first ceramic layer, and then forming an electrode 14A on the first ceramic layer. 14A on the first ceramic layer containing the second by spraying
It is produced based on the step of forming the ceramic layer of the above.
In the second embodiment, in this step (A), based on a non-pressurized metal infiltration method, an aluminum-based material having a composition of aluminum melted in a ceramic member formed from aluminum nitride particles is applied in a non-pressurized state. Permeation step.

More specifically, after forming AlN particles having an average particle diameter of 10 μm by a slurry casting method, the mixture is fired at a temperature of about 800 ° C. to form a ceramic member which is a preform in which the AlN particles are formed. Was prepared. Then, the ceramic member is preheated to about 800 ° C., and the aluminum melted by heating to about 800 ° C. is infiltrated into the ceramic member without pressure. Thereby, the base material 1 having a configuration of 70% by volume of AlN-30% by volume of Al
2A can be made. Next, the base material 12A is formed into a shape of a disc-shaped temperature control jacket.
In addition, a hole for embedding a pusher pin or the like is previously formed in the base material 12A. Next, the top surface of the base material 12A thus obtained is polished.

Then, TiO was added to Al ₂ O ₃ on the polished surface.
₂ is mixed in an amount of about 2.5% by weight, and a mixed powder having a particle size of about 10 μm is sprayed in a molten state by a vacuum spraying method and solidified. Thereby, the first ceramics layer having a volume resistivity value of the order of 10 ¹¹ Ω / □ can be formed.
Prior to the formation of the first ceramics layer, for example, nickel (Ni-5% by weight Al) containing about 5% by weight of aluminum is sprayed as a thermal spraying underlayer, and the first thermal spraying underlayer is formed on the thermal spraying underlayer. The ceramic layer may be formed by a thermal spraying method. Thereafter, the electrode 14A is formed on the first ceramic layer by a thermal spraying method. The electrode 14A is of a bipolar type.
Thereafter, about 2.5% by weight of TiO ₂ was added to Al ₂ O _{3 over} the entire surface.
A second ceramic layer is formed by spraying and solidifying the mixed powder having a mixed particle size of about 10 μm in a molten state by a vacuum spraying method. Thus, the ceramic layer 13A (the first ceramic layer and the second ceramic layer) in which the electrode 14A is formed can be formed. Thereafter, a heater 15A made of a PBN heater is attached to the bottom surface of the base material 12A, that is, the surface opposite to the surface on which the ceramic layer 13A is provided.
Obtain OA. The ceramic layer 13A may be formed on the side surface of the base material 12A by a thermal spraying method.

In the substrate mounting stage 10A manufactured in this manner, the linear expansion coefficients α ₂₁ and α _{22 of} the first and second ceramic layers are substantially the same as the linear expansion coefficient α _{1 of the} base material 12A. Value. Therefore, even if the temperature changes due to high-temperature heating of the base material 12A, the ceramic layer 13A does not suffer damage such as cracks. In the second embodiment, the volume ratio between aluminum nitride and aluminum is adjusted, and if necessary, the TiO ₂ in the first and second ceramic layers made of Al ₂ O _{3 is used.}
By adjusting the addition rate of the linear expansion coefficient alpha ₂₁ linear expansion coefficient of the base material 12A alpha ₁ and the first and second ceramic layers, the _{α 22, (α 1 -4)} ≦ α 21 ≦ (α ₁ +4) and (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +4). As a result, it is possible to effectively prevent the ceramic layer 13A from being damaged due to a temperature change of the base mounting stage 10A.

The ceramic layer 13A is formed on the base material 12A.
Since the composite member is formed thereon by a thermal spraying method, a composite member having a large area can be manufactured, and it is possible to easily cope with an increase in the area of the base. Further, the base material 12A and the ceramic layer 13A
Are further integrated, stress relaxation between the base material 12A and the ceramic layer 13A can be achieved, and the base material 12A
The heat conduction from A to the ceramic layer 13A becomes quick, and the temperature control of the substrate held and fixed to the ceramic layer 13A can be performed quickly and reliably.

The etching apparatus 20A of the second embodiment provided with such a substrate mounting stage 10A constituted by the composite member 11A includes, as shown in a conceptual diagram in FIG. Except for this, the structure can be substantially the same as that of the substrate processing apparatus described in the first embodiment, and a detailed description thereof will be omitted. The temperature of the substrate mounting stage 10A is controlled by a controller (PID controller) 38 detecting the temperature detected by the fluorescent fiber thermometer 36, and a power supply 39 for supplying power to the heater 15A.
Can be controlled.

Although the composition of the aluminum-based material forming the base material is aluminum, the composition of the aluminum-based material forming the base material may be aluminum and silicon instead. The composition of the aluminum-based material is changed to aluminum and silicon (for example, Al 80 volume% -S
i20% by volume), the linear expansion coefficient α of the base material
₁ can be controlled, and the difference between the linear expansion coefficients α ₂₁ and α ₂₂ of the ceramic layer can be further reduced. Further, the first ceramic layer and the second ceramic layer may be made of aluminum nitride (AlN) instead of being made of Al ₂ O ₃ . Further, the first ceramics layer may be made of Al ₂ O ₃ , the second ceramics layer may be made of aluminum nitride (AlN), or the first ceramics layer may be made of aluminum nitride (AlN).
N), and the second ceramics layer may be made of Al ₂ O ₃ .

(Embodiment 3) Embodiment 3 is also a modification of Embodiment 1. The third embodiment is different from the first embodiment in that the composition of the ceramic member forming the base material in the composite member is silicon carbide (SiC), and the composition of the aluminum-based material forming the base material is aluminum (Al).
It is in the point which was.

The substrate mounting stage 1 according to the third embodiment which is a part of the substrate processing apparatus constituted by the composite member.
FIG. 4B is a schematic cross-sectional view of FIG. The substrate mounting stage 10B is also composed of the composite member 11B. The composite member 11B includes a base material 12B (corresponding to a temperature control jacket) in which the structure of the ceramic member is filled with an aluminum-based material, and a ceramic material provided on the top surface and side surfaces of the base material 12B by a thermal spraying method. Layer 13B
Consisting of The shape of the base material 12B is a disk. Incidentally, similarly to the second embodiment, the heater 15B is provided on the bottom surface of the base material 12B.
Is attached. An electrode 14B is formed inside the ceramic layer 13B.

In the third embodiment, the composition of the ceramic member constituting base material 12B is silicon carbide (SiC).
And The linear expansion coefficient of silicon carbide is 4 × 10 ⁻⁶ / K, and the thermal conductivity is 0.358 cal / cm · sec · K (1
50 W / m · K). The composition of the aluminum-based material constituting the base material was aluminum (Al).
(Α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ -4) ≦ α
The volume ratio between silicon carbide and aluminum is determined so as to satisfy ₂₂ ≦ (α ₁ +4), and specifically, the volume ratio of silicon carbide / aluminum is 70/30.
The coefficient of linear expansion of the base material 12B is 6.2 × 10 ⁻⁶ / K as an average value at 100 to 300 ° C. That is, α ₁
= 6.2. The material constituting the ceramic layer 13B was Al ₂ O ₃ to which about 1.5% by weight of TiO ₂ was added. The ceramic layer 13B is formed on the top and side surfaces of the base material 12B by a thermal spraying method. Al ₂ O ₃ is originally the linear expansion coefficient of about 8 × 10 ^-6 / K, TiO the Al ₂ O ₃
By adding ₂ , the coefficient of linear expansion is from 100 to
About 8 to 9 × 10 ⁻⁶ / K at an average value at 300 ° C.
(Α ₂₁ and α ₂₂ are approximately 8 to 9), and the relationship between the linear expansion coefficient α ₁ of the base material 12B and the linear expansion coefficients α ₂₁ and α ₂₂ of the first and second ceramic layers is (α ₁ -4). ) ≦ α ₂₁ ≦ (α ₁ +4)
And (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +4). Thus, it is possible to effectively prevent the ceramic layer 13B from being damaged by cracking or the like even by a temperature change due to high-temperature heating of the base material 12B. Also, TiO is added to Al ₂ O ₃ .
By adding ₂ , the volume resistivity of the ceramic layer 13B can be adjusted to the order of 10 ¹¹ Ω / □. Thus, the ceramic layer 13B effectively exhibits a function as an electrostatic chuck.

The heater 15B is provided in the same manner as in the second embodiment.
It is a PBN heater. By attaching the heater 15B to the back surface of the temperature control jacket, which is the base material 12B, the temperature of the base material 12B can be controlled within a range from room temperature to about 500 ° C. When a DC voltage is applied to the electrode 14B via a wiring (not shown), the ceramic layer 13B functions as an electrostatic chuck. A pusher pin (not shown) for pushing up the substrate placed and held on the ceramic layer 13B is embedded in the substrate mounting stage 10B. Also, this pusher pin is connected to the ceramic layer 13B.
A mechanism (not shown) for projecting above the top surface or burying below the top surface is attached.

The method of manufacturing the substrate mounting stage 10B will be described below. The composite member 11B is basically (A) a structure in which a ceramic member is filled with an aluminum-based material and a structure in which the ceramic member is filled with an aluminum-based material, similarly to the second embodiment. (B) forming a first ceramic layer on the surface of the base material 12B by spraying, forming an electrode 14B on the first ceramic layer, and then forming the electrode 14B on the first ceramic layer. It is manufactured based on a step of forming a second ceramics layer on the first ceramics layer including the first ceramics layer by a thermal spraying method. In the third embodiment, in this step (A), based on a non-pressurized metal infiltration method, an aluminum-based material having a composition of aluminum melted in a ceramic member formed from silicon carbide particles is applied in a non-pressurized state. Permeation step.

More specifically, a volume ratio of SiC particles having an average particle size of 15 μm to SiC particles having an average particle size of 60 μm is 1: 4.
After shaping the mixture mixed by the casting slurry forming method,
By firing at a temperature of about 800 ° C., the SiC
A ceramic member, which is a preform formed from particles, was produced. Then, the ceramic member is preheated to about 800 ° C., and the aluminum melted by heating to about 800 ° C. is infiltrated into the ceramic member without pressure. Thereby, SiC 70 volume% -Al 30 volume%
Can be manufactured. Then
The base material 12B is formed into a shape of a disc-shaped temperature control jacket. A hole for embedding a pusher pin or the like is also formed in the base material 12B in advance. Then
The top and side surfaces of the base material 12B thus obtained are polished.

Then, TiO was added to Al ₂ O ₃ on the polished surface.
₂ is mixed in an amount of about 1.5% by weight, and a mixed powder having a particle diameter of about 10 μm is sprayed in a molten state by a vacuum spraying method and solidified. Thereby, the first ceramics layer having a volume resistivity value of the order of 10 ¹¹ Ω / □ can be formed.
Prior to the formation of the first ceramics layer, for example, nickel (Ni-5% by weight Al) containing about 5% by weight of aluminum is sprayed as a thermal spraying underlayer, and the first thermal spraying underlayer is formed on the thermal spraying underlayer. The ceramic layer may be formed by a thermal spraying method. Thereafter, the electrode 14B is formed on the first ceramic layer by a plating method. The electrode 14B is of a bipolar type. Thereafter, a mixed powder of Al ₂ O ₃ mixed with TiO ₂ of about 1.5% by weight and having a particle size of about 10 μm is sprayed on the entire surface in a molten state by a vacuum spraying method and solidified, thereby forming a second ceramic layer. Form. Thus, the ceramic layer 13B having the electrode 14B formed therein (first
Ceramic layer and the second ceramic layer) can be formed. Then, PB is applied to the bottom surface of the base material 12B, that is, the surface opposite to the top surface on which the ceramic layer 13B is provided.
A heater 15B composed of N heaters is attached to obtain a substrate mounting stage 10B.

The method of manufacturing the substrate mounting stage 10B is not limited to the method described above. The above step (A)
As in the first embodiment, a ceramic member having a composition of silicon carbide is provided in a container (mold), and an aluminum-based material having a composition of molten aluminum is poured into the container (mould). And filling the ceramic member with an aluminum-based material. That is, in order to manufacture the substrate mounting stage 10B, first, a preform made of SiC formed into a predetermined disk shape is prepared. A hole for embedding a pusher pin or the like is formed in the preform in advance. Next, the ceramic member made of the preform is preheated to about 800 ° C., and subsequently, molten aluminum is poured into the vessel (mold) by heating to about 800 ° C. Then, a high-pressure casting method in which a high pressure of about 1 ton / cm ² is applied in the container (mold) is performed. As a result, the structure of the ceramic member is filled with aluminum. Then, the base material 12B is manufactured by cooling and solidifying the aluminum. Hereinafter, the substrate mounting stage 10B may be manufactured by the same method as described above.

In the substrate mounting stage 10B manufactured as described above, even if the base material 12B is heated by high temperature or the like, the ceramic layer 13B is not damaged such as a crack. Further, in the substrate processing apparatus according to the third embodiment, by adjusting the volume ratio between silicon carbide and the aluminum-based material, and further, if necessary, A
TiO ₂ in ceramic layer 13B made of l ₂ O ₃
By adjusting the addition rate of the linear expansion coefficient alpha ₂₁ linear expansion coefficient of the base material 12B alpha ₁ and the first and second ceramic layers, the _{α 22, (α 1 -4)} ≦ α 21 ≦ (α ₁ +4) and (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +4). As a result, it is possible to effectively prevent damage such as cracking of the ceramic layer 13B due to a temperature change of the base mounting stage 10B.

The ceramic layer 13B is formed on the base material 12B.
Since the composite member is formed thereon by a thermal spraying method, a composite member having a large area can be manufactured, and it is possible to easily cope with an increase in the area of the base. Moreover, the base material 12B and the ceramic layer 13B
Are further integrated, stress relaxation between the base material 12B and the ceramic layer 13B can be achieved, and the base material 12B
The heat conduction from B to the ceramic layer 13B becomes quick, and the temperature control of the substrate held and fixed to the ceramic layer 13B can be performed quickly and reliably.

Although the composition of the aluminum-based material forming the base material was aluminum, the composition of the aluminum-based material forming the base material was changed to aluminum and silicon (for example, 80% by volume of Al—20% by volume of Si). It can be. By setting the composition of the aluminum-based material to aluminum and silicon, the linear expansion coefficient α of the base material
₁ can be controlled, and the difference between the linear expansion coefficients α ₂₁ and α _{22 of} the first and second ceramic layers can be further reduced. Further, the first ceramic layer and the second ceramic layer may be made of aluminum nitride (AlN) instead of being made of Al ₂ O ₃ .
Further, the first ceramics layer is made of Al ₂ O ₃ ,
The second ceramic layer may be composed of aluminum nitride (AlN), the first ceramic layer may be composed of aluminum nitride (AlN), and the second ceramic layer may be composed of Al ₂ O _3. .

FIG. 6 shows a conceptual diagram of an etching apparatus 20B of the third embodiment provided with such a substrate mounting stage 10B constituted by the composite member 11B. This etching apparatus 20B is an ICP (Inductive Coupled Plasma).
It is a type of dry etching device. Etching equipment 20
B includes a quartz chamber 51, a top plate 52, and an inductive coupling coil 5 disposed outside the side surface of the chamber 51.
3 are provided. A substrate mounting stage 10B for holding and fixing the semiconductor substrate 40 is provided in the chamber 51.
(See FIG. 4B). Further, an exhaust port 57 for exhausting the gas in the chamber 51 is connected to negative pressure means (not shown) such as a vacuum pump. A bias power supply 54 for controlling ion energy incident on the semiconductor substrate 40 is connected to the base mounting stage 10B, and further, a ceramic layer 13B is connected to the electrode 14B.
Is connected to a DC power supply 55 for exerting an electrostatic attraction force. The base material 12B of the base mounting stage 10B
Is connected to the power supply 56. Further, a fluorescent fiber thermometer (not shown) for measuring the temperature of the semiconductor substrate 40 is provided in the etching apparatus 20.
B is equipped. The temperature of the substrate mounting stage 10B is controlled by detecting a temperature detected by a fluorescent fiber thermometer with a control device (PID controller) (not shown) and controlling a power supply 56 for supplying power to the heater 15B. Can be done by The top plate 52 is preferably made of a composite material as described later.

As in the first embodiment, plasma etching of a copper (Cu) film was performed using an etching apparatus 20B as a substrate processing apparatus. The etching conditions are shown in Table 3 below.
Conditions.

[0099]

Table 3 Etching gas: Cl ₂ = 10 sccm Pressure: 0.13 Pa (1 mTorr) Source power: 1.5 kW (13.56 MHz) RF bias: 350 W Semiconductor substrate temperature: 250 ° C. Temperature of top plate 52: 300 ° C.

When the plasma etching process was performed in this manner, almost no increase in the temperature of the semiconductor substrate 40 and the like due to the heat input from the plasma was observed during the etching process. Was able to stably maintain the Cu film 43 (see FIG. 3) at the set temperature (250 ° C.). Since the temperature of the semiconductor substrate 40 including the Cu film 43 could be stabilized with high accuracy in this manner, Cl ₂ was used as an etching gas.
In spite of using alone, a wiring having a good anisotropic shape could be formed, and the Cu film 43 could be processed favorably.

(Embodiment 4) Embodiment 4 is also a modification of Embodiment 1. Embodiment 4 is different from Embodiment 1 in that the composition of the ceramic member forming the base material in the composite member is aluminum oxide (Al ₂ O ₃ ), and the composition of the aluminum-based material forming the base material is aluminum. (Al).

Substrate mounting stage 1 in Embodiment 4 which is a part of a substrate processing apparatus constituted by a composite member
The schematic cross-sectional view of FIG. 0B is the same as that shown in FIG. That is, the composite member in the fourth embodiment has the same structure as the composite member 11B described in the third embodiment.

In the fourth embodiment, the composition of the ceramic member constituting base material 12B is changed to aluminum oxide (A
l ₂ O ₃ ). The coefficient of linear expansion of aluminum oxide is 7.8 × 10 ⁻⁶ / K, and the thermal conductivity is 0.069 ca.
1 / cm · second · K (29 W / m · K). The composition of the aluminum-based material constituting the base material was aluminum (Al). The volume ratio with aluminum aluminum oxide is determined so as to satisfy (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +4) and (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +4). Typically, the volume ratio of aluminum oxide / aluminum is 80/20. The coefficient of linear expansion of the base material 12B is an average value at 100 to 300 ° C.
⁻⁶ / K. That is, α ₁ = 11. First and second
The material constituting the ceramic layer of TiO ₂ is about 1.
Al ₂ O ₃ was added at 5% by weight. Ceramic layer 1
3B is formed on the top and side surfaces of the base material 12B by a thermal spraying method. The linear expansion coefficient alpha ₂₁ linear expansion coefficient of the base material 12B alpha ₁ and the first and second ceramic layers, the relationship of alpha _{22 is, (α 1 -4) ≦ α} 21 ≦ (α 1 +4) and ( α ₁ -4)
≦ α ₂₂ ≦ (α ₁ +4). Thus, it is possible to effectively prevent the ceramic layer 13B from being damaged by cracking or the like even by a temperature change due to high-temperature heating of the base material 12B. Also, by adding TiO ₂ to Al ₂ O ₃ , the volume resistivity of the ceramic layer 13B is reduced to 1
It can be adjusted to the order of 0 ¹¹ Ω / □. Thus, the ceramic layer 13B effectively exhibits a function as an electrostatic chuck.

A method of manufacturing the base mounting stage 10B according to the fourth embodiment will be described below. The composite member 11B is basically (A) a structure in which a ceramic member is filled with an aluminum-based material and a structure in which the ceramic member is filled with an aluminum-based material, similarly to the second embodiment. Forming a base material 12B, and (B) forming a first ceramic layer on the surface of the base material 12B by thermal spraying, forming an electrode 14B on the first ceramic layer,
It is produced based on a step of forming a second ceramics layer on the first ceramics layer including the electrode 14B by a thermal spraying method. In the fourth embodiment, in this step (A), the non-pressurized metal infiltration method is used to infiltrate a ceramic material formed of aluminum oxide into an aluminum-based material containing molten aluminum in a non-pressurized state. The step of causing

Specifically, Al ₂ O ₃ having an average particle size of 20 μm
A mixture obtained by mixing particles and Al ₂ O ₃ particles having an average particle diameter of 80 μm at a volume ratio of 1: 4 is cast by a slurry molding method, and then baked at a temperature of about 800 ° C.
A ceramic member as a preform formed of Al ₂ O ₃ particles was produced. Then, the ceramic member is preheated to about 800 ° C., and the aluminum melted by heating to about 800 ° C. is infiltrated into the ceramic member without pressure. Thereby, Al ₂ O ₃ 80 volume% -Al
A base material 12B having a configuration of 20% by volume can be manufactured. Next, the base material 12B is formed into a shape of a disc-shaped temperature control jacket. In addition, in this base material 12B,
A hole for embedding a pusher pin or the like is also processed in advance. Next, the top and side surfaces of the base material 12B thus obtained are polished.

Then, TiO was added to Al ₂ O ₃ on the polished surface.
₂ is mixed in an amount of about 1.5% by weight, and a mixed powder having a particle diameter of about 10 μm is sprayed in a molten state by a vacuum spraying method and solidified. Thereby, the first ceramics layer having a volume resistivity value of the order of 10 ¹¹ Ω / □ can be formed.
Prior to the formation of the first ceramics layer, for example, nickel (Ni-5% by weight Al) containing about 5% by weight of aluminum is sprayed as a thermal spraying underlayer, and the first thermal spraying underlayer is formed on the thermal spraying underlayer. The ceramic layer may be formed by a thermal spraying method. Thereafter, the electrodes 14B are formed on the first ceramic layer by a printing method of printing and curing the conductive paste.
The electrode 14B is of a bipolar type. After that, A
About 2.5% by weight of TiO ₂ mixed with l ₂ O ₃ has a particle size of about 1
A second ceramic layer is formed by spraying and solidifying a mixed powder of 0 μm in a molten state by a vacuum spraying method. Thus, the ceramic layer 13B having the electrode 14B formed therein (the first ceramic layer and the second ceramic layer 13B) is formed.
Ceramic layer) can be formed. afterwards,
A heater 1 comprising a PBN heater is provided on the bottom surface of the base material 12B, that is, on the surface opposite to the top surface on which the ceramic layer 13B is provided.
5B is attached to obtain a substrate mounting stage 10B.

The method of manufacturing the substrate mounting stage 10B is not limited to the method described above. The above step (A)
As in the first embodiment, a ceramic member containing aluminum oxide is placed in a container (mold), and an aluminum-based material containing aluminum is poured into the container (mold). And filling the ceramic member with an aluminum-based material. That is, in order to manufacture the substrate mounting stage 10B, first, Al ₂ O ₃ formed into a predetermined disc shape is used.
A preform consisting of A hole for embedding a pusher pin or the like is formed in the preform in advance. Next, the ceramic member made of the preform is preheated to about 800 ° C., and subsequently, molten aluminum is poured into the vessel (mold) by heating to about 800 ° C. And about 1 in the container (mold)
A high pressure casting method is applied, applying a high pressure of ton / cm ² . As a result, the structure of the ceramic member is filled with aluminum. Then, the base material 12B is manufactured by cooling and solidifying the aluminum. Hereinafter, the substrate mounting stage 10B may be manufactured by the same method as described above.

In the substrate mounting stage 10B manufactured as described above, the ceramic layer 13B does not suffer damage such as cracks even when the base material 12B changes in temperature due to high-temperature heating or the like. Further, in the substrate processing apparatus according to the fourth embodiment, the first and second layers made of Al ₂ O ₃ may be further adjusted by adjusting the volume ratio between aluminum oxide and the aluminum-based material, if necessary. By adjusting the addition rate of TiO ₂ in the ceramic layer of ( ₁ ), the linear expansion coefficient α ₁ of the base material 12B and the linear expansion coefficients α ₂₁ and α ₂₂ of the first and second ceramic layers are (α 1-4). ≦ α ₂₁ ≦ (α ₁ +
4) and (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +4). As a result, the substrate mounting stage 1
Damage such as cracking of the ceramic layer 13B due to a temperature change of 0B can be effectively prevented.

The ceramic layer 13B is formed on the base material 12B.
Since the composite member is formed thereon by a thermal spraying method, a composite member having a large area can be manufactured, and it is possible to easily cope with an increase in the area of the base. Moreover, the base material 12B and the ceramic layer 13B
Are further integrated, stress relaxation between the base material 12B and the ceramic layer 13B can be achieved, and the base material 12B
The heat conduction from B to the ceramic layer 13B becomes quick, and the temperature control of the substrate held and fixed to the ceramic layer 13B can be performed quickly and reliably.

Although the composition of the aluminum-based material forming the base material was aluminum, the composition of the aluminum-based material forming the base material was changed to aluminum and silicon (for example, Al 80 vol% -Si 20 vol%). It can be. By setting the composition of the aluminum-based material to aluminum and silicon, the linear expansion coefficient α of the base material
₁ can be controlled, and the difference between the linear expansion coefficients α ₂₁ and α ₂₂ of the ceramic layer can be further reduced. Further, the first ceramic layer and the second ceramic layer may be made of aluminum nitride (AlN) instead of being made of Al ₂ O ₃ . Further, the first ceramics layer may be made of Al ₂ O ₃ , the second ceramics layer may be made of aluminum nitride (AlN), or the first ceramics layer may be made of aluminum nitride (AlN).
N), and the second ceramics layer may be made of Al ₂ O ₃ .

(Embodiment 5) Embodiment 5 is a modification of Embodiment 1. However, in the substrate processing apparatus, a plasma CVD process is performed on the substrate formed on the substrate. Hereinafter, a plasma CVD apparatus (more specifically, a bias ECR
The outline of the CVD apparatus will be described with reference to FIG. 7, but the structure of the substrate mounting stage itself is the same as that of the substrate mounting stage 10 described in the first embodiment.

The bias ECR CVD apparatus 60 (hereinafter abbreviated as CVD apparatus) includes a chamber 61 in which a chamber side wall 61A is formed from an aluminum block, and the substrate mounting stage 10 shown in FIG. I have. The base mounting stage 10 is arranged at the bottom of the chamber 61. Note that the chamber side wall 61A can be made of a composite material as described later.

A window 61 made of quartz is provided on the top surface of the chamber 61.
B is provided. Above the window 61B, a microwave generating means 62 is provided. Further, a heater 63 is provided on the outer peripheral surface of the side wall 61A, so that the inside of the chamber 61 can be heated to a predetermined temperature.
Further, a solenoid coil 64 is disposed in a peripheral portion on the upper side of the chamber 61. A pump 65 is provided on the exhaust side of the chamber 61. An RF bias power source 66 is connected to the substrate mounting stage 10.
Further, a DC power supply 67 for causing the ceramic layer 13 to exert an electrostatic attraction force is connected to the electrode 14. Further, the heater 15 provided in the base material 12 is connected to a power supply 68. The pipes 34A, 34B, 34C, the heating medium supply device 35 for temperature control, the fluorescent fiber thermometer 36,
Control valve 37, control device (PID controller) 38
Are not shown.

In the CVD apparatus 60 having such a configuration, ECR discharge occurs due to the resonance action of the microwave supplied from the microwave generation means 62 through the window 61B and the magnetic field of the solenoid coil 64, and is generated here. The ions are incident on a substrate (for example, a semiconductor substrate 40) on the substrate mounting stage 10. Therefore, a highly accurate gap fill can be realized in the CVD apparatus 60 by such a mechanism. The CVD device 60 has a C
A pipe (not shown) for supplying a source gas for VD processing to the chamber 61 is provided.

The structure and configuration of the substrate mounting stage according to the fifth embodiment may be the same as the structure and configuration of the substrate mounting stage described in the second to fourth embodiments. Further, in the CVD apparatus, depending on the structure of the substrate mounting stage, the piping 16 and related equipment and devices can be omitted.

The substrate processing method of the present invention using the CVD apparatus 60 in Embodiment 5 (however, plasma CVD processing) will be described below with reference to FIGS. 8A to 8C.

First, a base insulating layer 46 made of SiO ₂ is formed on a semiconductor substrate 40 made of a silicon semiconductor substrate by a known method, and a wiring 47 made of an aluminum-based alloy is formed by a known sputtering method and lithography technique. And an etching technique. In this example, the base insulating layer 46 and the wiring 47 made of an aluminum-based alloy correspond to the base. This state is shown in the schematic partial cross-sectional view of FIG.

Then, the semiconductor substrate 40 is mounted on the substrate mounting stage 10 of the CVD apparatus 60 shown in FIG.
The ceramic layer 13 is caused to function as an electrostatic chuck, and the semiconductor substrate 40 is held and fixed on the base mounting stage 10. Next, the substrate mounting stage 10 was heated and adjusted to 350 ° C., which is a condition temperature in the CVD process. That is,
The substrate mounting stage 10 was heated by operating the heater 15 and flowing the heat medium for temperature control through the pipe 16. Then, a plasma CVD process was performed under the conditions exemplified in Table 4 below to form an interlayer insulating film 48 made of SiO ₂ . This state is shown in the schematic partial cross-sectional view of FIG.

[0119]

Table 4 Gas used: SiH ₄ / N ₂ O = 80/20 sccm Pressure: 1.3 Pa (10 mTorr) Microwave power: 1500 W RF bias: 500 W (800 kHz) Semiconductor substrate temperature: 350 ° C.

After the interlayer insulating film 48 is formed in this manner, the interlayer insulating film 48 is planarized by, for example, a CMP method (chemical mechanical polishing), and a part of the structure is schematically shown in FIG. The interlayer insulating film 48A which has been planarized as shown in the sectional view.
Was formed.

According to such a plasma CVD method, the interlayer insulating film 48 is formed while controlling the temperature of the substrate by using the substrate mounting stage 10.
The temperature of the substrate can be controlled with high precision during the film formation. As a result, a highly reliable interlayer insulating film with little structural water (moisture entering the interlayer insulating film 48) can be formed in the interlayer insulating film 48. Heretofore, since there has been no electrostatic chuck system of a high temperature specification, the temperature of the substrate could not be sufficiently controlled. As a result, H and OH in the interlayer insulating film could not be sufficiently removed, and only an interlayer insulating film made of SiO ₂ having a film quality with a problem in reliability could be obtained.

(Sixth Embodiment) The sixth embodiment is also a modification of the first embodiment. However, in the substrate processing apparatus, a sputtering process including a soft etching process is performed on the substrate formed on the substrate. Hereinafter, an outline of a sputtering apparatus which is a substrate processing apparatus according to the sixth embodiment will be described with reference to FIG.

In the sputtering apparatus 70, a substrate mounting stage 10 shown in FIG.
Is provided. The top plate 71A of the chamber 71 is made of quartz. In addition, an inductive coupling coil 72 is arranged on the outer surface of the side wall of the chamber 71. Reference number 73 is a target. The target 73 is connected to a high frequency power supply 74. Further, a high frequency power supply 75 is connected to the base stage 10. In addition, a DC power supply 76 for causing the ceramic layer 13 to exert an electrostatic attraction force is connected to the electrode 14. Further, the heater 15 provided in the base material 12 is connected to a power supply 77. In addition, piping 3
4A, 34B, 34C and heat medium supply device 3 for temperature control
5. Illustration of a fluorescent fiber thermometer 36, a control valve 37, and a control device (PID controller) 38 is omitted. The sputter device 70 is provided with pipes for introducing various process gases, but these pipes are not shown. The top plate 71A can be made of a composite material, as described later.

The structure and configuration of the substrate mounting stage according to the sixth embodiment may be the same as the structure and configuration of the substrate mounting stage described in the second to fourth embodiments.

A sputtering method including a soft etching process using the sputtering apparatus 70 will be described below with reference to FIGS.

First, a wiring 102 made of an aluminum-based alloy is formed on a base insulating layer 101 made of SiO ₂ formed on a semiconductor substrate 40 made of a silicon semiconductor substrate.
Is formed based on a known sputtering method, a lithography technique, and an etching technique. Next, the entire surface is made of SiO ₂
Is formed by a known method. Thereafter, an opening 1 is formed in the interlayer insulating film 103 above the wiring 102 by a lithography technique and a dry etching technique.
04 is provided. This state is shown in the schematic partial cross-sectional view of FIG. In the sixth embodiment, the wiring 102 corresponds to a base.

Then, the silicon semiconductor substrate is placed on the substrate mounting stage 10 of the sputtering apparatus 70 shown in FIG. Hold on 10 and fix. Next, the condition temperature of 50 for the soft etching process is set.
The substrate mounting stage 10 is heated and adjusted to 0 ° C.
Keep at 00 ° C.

Then, a natural etching film (not shown) formed on the surface of the wiring 102 made of an aluminum alloy exposed at the bottom of the opening 104 is subjected to a soft etching process under the conditions exemplified in Table 5 below. Remove.

[0129]

Table 5 Working gas: Ar = 200 sccm Pressure: 1.3 Pa (10 mTorr) Source power: 1500 W RF bias: 100 W Semiconductor substrate temperature: 500 ° C.

Since the soft etching process is performed with the base kept at a high temperature heating condition, not only the natural oxide film on the surface of the wiring 102 is removed, but also the interlayer insulating film 103 is removed.
The moisture contained therein is baked out.

After performing the pretreatment in this way, the Ti
Layer, a TiN layer, and a metal wiring material layer 105 made of an aluminum-based alloy are formed by a sputtering method. This state is shown in FIG.
0 (B) is a schematic partial cross-sectional view, but illustration of a Ti layer and a TiN layer is omitted. The shape of the metal wiring material layer 105 formed above the opening 104 is desirably a bridge shape. That is, it is desirable that a void remains at the bottom of the opening 104 and that the upper part of the opening 104 is closed by the metal wiring material layer 105. By forming the metal wiring material layer 105 in such a bridge shape, the metal wiring material above and near the opening 104 is pushed into the opening 104 by the pressure of the high-pressure inert gas. Specifically, an atmosphere in the sputtering apparatus 70 is heated to about 10 ⁶ Pa or more while the substrate is heated to 300 to 500 ° C., preferably 400 to 500 ° C., and more preferably 440 to 500 ° C. Gas atmosphere. In this way, as shown in a schematic partial cross-sectional view of FIG. 11, the connection hole (via hole) filled with the metal wiring material layer 105 without leaving a void in the opening 104.
Could be formed.

In the prior art, in the high-pressure reflow process,
Opening 1 due to the effect of outgassing from interlayer insulating film 103
It is difficult to reliably fill the inside of the semiconductor device 04 with the metal wiring material layer 105, and there has been a problem that voids are formed in the connection holes (via holes). However, in the sputtering processing method using the sputtering apparatus 70 of the sixth embodiment, the interlayer insulating film
Since the moisture in the inside can be sufficiently removed, it is possible to obtain a connection hole free from poor embedding.

Although the present invention has been described based on the embodiments of the present invention, the present invention is not limited to these embodiments. The structure of the substrate processing apparatus described in the embodiment of the invention is an example, and the design can be changed as appropriate. Also,
The various processing conditions described in the embodiments of the invention are also examples, and can be appropriately changed. Furthermore, the composition of the composite member, the component ratio, and the physical properties of the cordierite ceramic fiberboard are also examples, and can be appropriately changed. The combination of the substrate processing apparatus and the substrate mounting stage described in each embodiment of the present invention is also arbitrary.

In the embodiment of the invention, the planar shape of the electrode 14 is a so-called comb-shaped electrode shape (see FIG. 1C), but the shape of the electrode 14 is not limited to such a shape.
For example, any pair of shapes such as two semicircular shapes obtained by dividing a circle into two can be used.

In the embodiments of the present invention, the base mounting stage is manufactured exclusively from the integrally formed base material. However, the base mounting stage may be manufactured from a combination of an aluminum material and a base material. Can also. FIG. 12 shows a schematic sectional view of such a substrate mounting stage.
The substrate mounting stage 10C is manufactured by fixing the composite member 11C to an aluminum disk-shaped member 17 by brazing or screwing. The brazing material or screw is
It is not shown in FIG. 12 and FIGS. 15 and 18 described later. In the structure shown in FIG.
The top surface of 0C is covered with a ceramic layer 13C based on a thermal spraying method. If necessary, the side surface of the substrate mounting stage 10C may be covered with a ceramic layer 13C. In FIG. 12A, a pipe 16C is provided inside a disk-shaped member 17 made of aluminum. The base material 12C is fixed to the upper and lower surfaces of the disk-shaped member 17. The structure of the composite member 11C fixed to the upper surface of the disk-shaped member 17 and the configuration of the base material 12C fixed to the lower surface of the disk-shaped member 17 are the same as those of the base material described in the first to fourth embodiments. The configuration can be the same. In FIG. 12B, the base material is omitted on the lower surface of the disc-shaped member 17 made of aluminum. In FIG. 12C, a PBN heater 15C is attached to the lower surface of a disk-shaped member 17 made of aluminum. Then, the composite member 11C is fixed to the upper surface of the disk-shaped member 17.

The plasma etching apparatus may be, for example, an ICP type plasma etching apparatus as shown in FIG. The etching apparatus 20C includes a chamber 81 composed of a chamber side wall 82 and a top plate 83.
And an inductive coupling coil 84 disposed outside the chamber side wall 82. The chamber side wall 82 is made of quartz, and the top plate 83 is made of a composite material as described later. In the chamber 81, the semiconductor substrate 4
Substrate holding stage 10 (FIG. 1)
See also). Further, an exhaust port 88 for exhausting gas in the chamber 81 is connected to negative pressure means (not shown) such as a vacuum pump. The substrate mounting stage 10 is connected to a bias power supply 85 for controlling the ion energy incident on the substrate.
(See FIG. 1), a DC power supply 86 for causing the ceramic layer 13 to exert an electrostatic attraction force is connected. The heater 15 disposed on the base material 12 of the base mounting stage 10 is connected to a power supply 87. Further, a fluorescent fiber thermometer (not shown) for measuring the temperature of the semiconductor substrate 40 is provided in the etching apparatus 20C. The temperature of the substrate mounting stage 10 is controlled by detecting a temperature detected by a fluorescent fiber thermometer with a control device (PID controller) (not shown) and controlling a power supply 87 for supplying power to the heater 15. Can be done by

If necessary, the chamber side wall and the top plate of the substrate processing apparatus can be made of a composite material. A schematic partial cross-sectional view of the chamber side wall of the substrate processing apparatus,
This is shown in FIG. The chamber side wall is made of a composite material 111 including a base material 112 in which the structure of a ceramic member is filled with an aluminum-based material, and a ceramic layer 113 provided on the surface of the base material 112. The configuration of the composite material 111 can be substantially the same as the composite member constituting the base mounting stage, except that the ceramic layer is a single layer and the electrode is not formed. It can be manufactured by substantially the same manufacturing method. In the composite material, when the coefficient of linear expansion of the base material is α ′ ₁ [unit: 10 ⁻⁶ / K], the coefficient of linear expansion of the ceramic layer is α ′ ₂ [unit: 10 ⁻⁶ / K].
K] preferably satisfies (α ′ ₁ -4) ≦ α ′ ₂ ≦ (α ′ ₁ +4).

A heater 115 composed of a known sheathed heater is disposed inside the chamber side wall (FIG. 14).
(A)). The heater 115 includes a heater body (not shown) and a sheath tube (not shown) provided outside the heater body and protecting the heater body. The heater 115 is connected to a power supply (not shown) via a wiring. The thermal expansion of the heater 115 affects the side wall of the chamber. Therefore, it is preferable to use a material having a value close to ₂ 'linear expansion coefficient α of ₁ or ceramic layer 113' linear expansion coefficient α of the base material 112. Specifically, such as titanium and stainless steel, the coefficient of linear expansion is 9 × 10 ⁻⁶ /
It is preferable to use a sheath tube made of a material of K to 12 × 10 ⁻⁶ / K. That is, the linear expansion coefficient α _H [unit: 10 ⁻⁶ / K] of the material constituting the heater 115 (the material of the sheath tube in contact with the base material 112) is (α ′ ₁ -4) ≦ α _H ≦ (α ′). ₁ +
It is preferable to satisfy the relationship of 4). The heater 11
The coefficient of linear expansion of the body of No. 5 is not particularly limited because it does not affect the side wall of the chamber. In some cases,
At the same time that the heater 115 is provided,
6 may be provided inside the chamber side wall, or the pipe may be provided inside the chamber side wall instead of providing the heater 115.

Alternatively, as shown in a schematic cross-sectional view of FIG. 14B, instead of embedding the heater 115 in the base material 112, the outer surface of the chamber side wall (the side opposite to the surface facing the chamber) may be used. For example, a heater 115A composed of a PBN heater may be attached to the (surface).

FIG. 15A, FIG. 15B and FIG.
FIG. 6 shows a schematic cross-sectional view of a side wall of a substrate processing apparatus manufactured by fixing the composite material 111 to a stainless steel or aluminum hollow cylindrical member 17A by brazing or screwing. In FIG. 15A,
A heater 115 (which may be a pipe) is provided inside the hollow cylindrical member 17A. The base material 112 is fixed to the inner surface and the outer surface of the hollow cylindrical member 17A. In FIG. 15B, the base material on the outer surface of the hollow cylindrical member 17A is omitted. In FIG. 16, the hollow cylindrical member 17
A PBN heater 115A is attached to the outer surface of A. Then, the composite material 111 is fixed to the inner surface of the hollow cylindrical member 17A.

The top plate of the substrate processing apparatus may have the same structure as the side wall of the chamber, if necessary. In addition, the chamber side wall or the top plate of these substrate processing apparatuses is the same as the composite member manufacturing method described in Embodiments 1 to 4 in that the electrode does not need to be formed.
Except for the fact that it can be a layer, it can be manufactured based on a substantially similar method, and a detailed description thereof will be omitted.

In the case of performing a plasma etching process on a substrate in the substrate processing apparatus, an etching apparatus in which a parallel plate upper counter electrode is provided in an etching apparatus which is a substrate processing apparatus may be used.

A substrate processing apparatus (a dry etching apparatus 20D provided with a parallel plate upper counter electrode 90 made of a composite material, and hereinafter simply referred to as an etching apparatus 20D)
FIG. 17 shows a conceptual diagram of the above. FIG. 18A is a schematic cross-sectional view of the upper counter electrode.

In this etching apparatus 20D, a parallel plate upper counter electrode 90 is arranged above the inside of the chamber 93 so as to face the substrate mounting stage 10 corresponding to the lower electrode. The upper counter electrode 90 is connected to the RF power source 9.
1 connected. The side wall 94 and the top plate 95 of the chamber 93 are preferably made of the composite material 111 described with reference to FIGS. Note that, in the etching apparatus 20D, components and parts denoted by the same reference numerals as those of the etching apparatus 20 shown in FIG. 1 are the same as those of the etching apparatus 20 shown in FIG.

The composite material forming the upper counter electrode 90 is as follows:
As in Embodiment 1, the composition of the ceramic member constituting base material 212 was cordierite ceramics.
The composition of the aluminum-based material constituting the base material is aluminum (Al) and silicon (Si). Based on the aluminum-based material, the aluminum-based material contains 20% by volume of silicon. The base material 212 has a value closer to a metal than the electrical conductivity or thermal conductivity of pure ceramics. Therefore, a high frequency can be applied to the upper opposing electrode 90 made of such a base material 212 without any problem. The material constituting the ceramic layer 213 is Al ₂ O ₃ to which about 2.5% by weight of TiO ₂ is added. The ceramic layer 213 having a thickness of about 0.2 mm is formed on the surface of the base material 212 by a thermal spraying method. The coefficient of linear expansion of the ceramic layer 213 having such a composition is 100 to 3
The average value at 00 ° C. is about 9 × 10 ⁻⁶ / K.
Accordingly, the coefficient of linear expansion α ″ ₂ of the ceramic layer 213 is about 9
And the coefficient of linear expansion of the base material 212 is α ″ ₁ ,
(Α ″ ₁ −4) ≦ α ″ ₂ ≦ (α ″ ₁ +4) The linear expansion coefficient of Al ₂ O ₃ itself is about 8 × 10 ⁻⁶ /.
K.

A heater 215 composed of a known sheathed heater is provided inside the upper counter electrode 90. The heater 215 includes a heater body (not shown) and a sheath tube (not shown) provided outside the heater body and protecting the heater body. And the heater 215
It is connected to a power supply 92 (see FIG. 17) via a wiring (not shown). The thermal expansion of the heater 215 depends on the upper counter electrode 9.
Affects 0. Therefore, it is preferable to use a material having a value close to the linear expansion coefficient of the ceramic layer 213 or the base material 212. Specifically, titanium or stainless steel or the like, it is preferable that the linear expansion coefficient which sheath tube made from the material of the ^{9 × 10 -6 / K~12 × 10} -6 / K. That is,
The linear expansion coefficient α _H [unit: 10 ⁻⁶ / K] of the material constituting the heater 215 (the material of the sheath tube in contact with the base material 212) is
It is preferable to satisfy (α ″ ₁ −4) ≦ α _H ≦ (α ″ ₁ +4). The linear expansion coefficient of the main body of the heater 215 is not particularly limited because it does not affect the upper counter electrode 90.

The method of manufacturing the upper counter electrode 90 composed of a composite material is the same as the method of manufacturing the composite member described in Embodiment 1, except that there is no need to form an electrode and that only one ceramic layer is required. Can be manufactured based on substantially the same method except for the above, and therefore detailed description is omitted.

The upper counter electrode 90 thus obtained
The base material 212 is made of a material obtained by filling a porous cordierite ceramic fiberboard with an aluminum-based material of 80% by volume of Al and 20% by volume of Si.
The coefficient of linear expansion of the base material 212 is close to the coefficient of linear expansion of the ceramic layer 213. Therefore,
The degree of expansion and contraction of the base material 212 and the ceramic layer 213 due to heating and cooling of the upper counter electrode 90 is almost the same. Therefore, due to the difference in the coefficient of linear expansion between these materials, it is ensured that the ceramic layer 213 is damaged, such as cracking, when heating the upper counter electrode 90 at high temperature or when returning the upper counter electrode 90 from high temperature to normal temperature. Can be avoided. In addition, the composite material 211
Has excellent thermal conductivity, so that the heater 215 can efficiently heat the upper counter electrode 90.

In the etching process, the upper counter electrode 9
Ceramic layer 2 forming the side wall 94 and the top plate 95
It is possible to prevent the occurrence of damages such as cracks in the 13, 13. Further, in the conventional etching apparatus, the carbon / fluorine ratio in the plasma fluctuates during the etching process due to, for example, a precursor of a fluorocarbon polymer generated at the time of discharge being deposited on the upper counter electrode or the side wall of the chamber. Would. However, since the upper counter electrode 90, the side wall 94, and the top plate 95 can be heated and held at a high temperature, the precursor can be effectively prevented from being deposited on the upper counter electrode, the side wall of the chamber, and the top plate. . As a result, it is possible to suppress a change in the carbon / fluorine ratio in the plasma during the etching process, and it is possible to perform a stable dry etching process with high accuracy. Moreover, since the fluorocarbon polymer hardly deposits on the upper counter electrode, the side wall of the chamber, and the top plate, the particle level does not deteriorate even if the number of etching processes is increased.

The upper counter electrode is the same as the composite member manufacturing method described in the second to fourth embodiments, except that it is not necessary to form an electrode, and only one ceramic layer is required. It can also be manufactured based on a substantially similar method.

FIGS. 18B and 18C show a disk-shaped member 17 made of stainless steel or aluminum.
B shows a schematic cross-sectional view of the upper counter electrode 90A manufactured by fixing the composite material 211A by brazing or screwing. A heater 215 is provided inside the disk-shaped member 17B. The structure of this composite material 211A is composite material 2
It has the same structure as 11. In FIG. 18B, the composite material 211A is fixed to the upper and lower surfaces of the disc-shaped member 17B. On the other hand, in FIG. 18C, the composite material is omitted on the upper surface of the disc-shaped member 17B.

[0152]

According to the present invention, since the base mounting stage is composed of a composite member, it is possible to avoid the occurrence of damage to the ceramic layer due to the thermal expansion of the base material and the ceramic layer, and to ensure that the composite member is kept at a high temperature. It can be used. In addition, since the ceramic layer is formed on the surface of the base material by the thermal spraying method, a large-area composite member can be manufactured, and it is possible to easily cope with an increase in the area of the base. In addition, since the base material and the ceramic layer are further integrated, stress relaxation between the base material and the ceramic layer can be achieved, and heat conduction from the base material to the ceramic layer can be promptly performed, so that the base material and the ceramic layer can be held on the ceramic layer. The temperature of the fixed base can be quickly, reliably and efficiently controlled, and the composite member can be efficiently heated by the temperature control means. Therefore, the conventional technology can perform high-precision temperature control at the time of high-temperature heating, which could not be performed due to cracking of the ceramic layer or the like. Semiconductor device manufacturing processes can be stably executed with high accuracy. In addition, a large-area substrate, for example, a silicon semiconductor substrate having a large diameter of about 300 mm can be processed, and, for example, high-temperature processing of the substrate can be performed with high accuracy. Furthermore, since a ceramic layer is provided, prevention of metal contamination and
For example, corrosion of the composite member due to a halogen-based gas can be effectively prevented.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of a substrate mounting stage according to Embodiment 1 of the present invention, and a diagram showing a planar shape of an electrode.

FIG. 2 is a conceptual diagram of a dry etching apparatus which is a substrate processing apparatus according to Embodiment 1 of the present invention.

FIG. 3 is a schematic partial cross-sectional view of a semiconductor substrate and the like for describing a substrate processing method (plasma etching processing method) according to Embodiment 1 of the present invention;

FIG. 4 is a schematic cross-sectional view of a substrate mounting stage according to Embodiment 2 and Embodiment 3 of the present invention.

FIG. 5 is a conceptual diagram of a dry etching apparatus which is a substrate processing apparatus according to Embodiment 2 of the present invention.

FIG. 6 is a conceptual diagram of a dry etching apparatus which is a substrate processing apparatus according to Embodiment 3 of the present invention.

FIG. 7 is a conceptual diagram of a plasma CVD apparatus as a substrate processing apparatus according to a fifth embodiment.

FIG. 8 is a schematic partial cross-sectional view of a semiconductor substrate and the like for describing a substrate processing method (plasma CVD processing) in Embodiment 5.

FIG. 9 is a conceptual diagram of a sputtering apparatus which is a substrate processing apparatus according to a sixth embodiment.

FIG. 10 is a schematic partial cross-sectional view of a semiconductor substrate or the like for describing a substrate processing method (sputtering process) in Embodiment 6.

FIG. 11 is a schematic partial cross-sectional view of a semiconductor substrate and the like for describing a substrate processing method (sputtering processing) in Embodiment 6 following FIG. 10;

FIG. 12 is a schematic cross-sectional view of another embodiment of the substrate mounting stage.

FIG. 13 is a conceptual diagram of an ICP type plasma etching apparatus.

FIG. 14 is a schematic partial sectional view of a chamber side wall.

FIG. 15 is a schematic partial sectional view of a chamber side wall.

FIG. 16 is a schematic partial sectional view of a chamber side wall.

FIG. 17 is a conceptual diagram of a substrate processing apparatus provided with a parallel plate upper counter electrode.

FIG. 18 is a schematic sectional view of an upper counter electrode.

[Explanation of symbols]

10, 10A, 10B, 10C: substrate mounting stage, 11, 11A, 11B, 11C: composite member, 1
11, 211, 211A: Composite material, 12, 12
A, 12B, 12C, 112, 212 ... base material, 1
3, 13A, 13B, 13C, 113, 213: ceramic layer, 130A: first ceramic layer,
130B ... second ceramic layer, 14, 14A,
14B, 14C ... electrodes, 15, 15A, 15B, 1
5C, 115, 115A, 215 ... heater, 16,
16C: piping, 17, 17B: disk-shaped member, 1
7A: hollow cylindrical member, 20, 20A, 20B, 20
C, 20D: dry etching apparatus, 21: chamber, 22, 23 ... RF antenna, 24 ...
Multipole magnet, 25 ... bell jar, 25A ...
· Top plate, 26 ··· Solenoid coil assembly
27, 29 ... matching network, 28 ...
Helicon wave plasma source, 30 ... power supply, 31 ...
・ Exhaust port, 32 ・ ・ ・ Bias power supply, 33 ・ ・ ・ DC power supply, 34A, 34B, 34C ・ ・ ・ Piping, 35 ・ ・ ・ Heat supply medium for temperature control, 36 ・ ・ ・ Fluorescent fiber thermometer, 37 ... Control valve, 38 ... Control device (PI
D controller), 39 power supply, 40 semiconductor substrate, 41 base insulating layer, 42 TiN film, 4
3 Cu film, 44 TiN film, 45 mask pattern, 46 base insulating layer, 47 wiring,
48 ... interlayer insulating film, 48A ... flattened interlayer insulating film, 51 ... chamber, 52 ... top plate, 53
... Inductive coupling coil, 54 ... Bias power supply, 55
... DC power supply, 56 ... power supply, 57 ... exhaust port,
60 ... bias ECR CVD apparatus, 61 ... chamber, 61A ... chamber side wall, 61B ...
Quartz window, 62 ... microwave generating means, 63 ...
・ Heater, 64 ・ ・ ・ Solenoid coil, 65 ・ ・ ・ Pump, 66 ・ ・ ・ RF bias power supply, 67 ・ ・ ・ DC power supply, 68 ・ ・ ・ Power supply, 70 ・ ・ ・ Sputtering device, 71 ・
..Chamber, 71A top plate, 72 inductive coupling coil, 73 target, 74, 75 high frequency power supply, 76 DC power supply, 77 power supply, 81
... chamber, 82 ... chamber side wall, 83
..Top plate, 84 ... Inductive coupling coil, 88 ... Exhaust port, 85 ... Bias power supply, 86 ... DC power supply, 8
7 Power supply, 90, 90A Upper counter electrode, 91
... RF power supply, 92 ... power supply, 93 ... chamber, 94 ... side wall, 95 ... top plate, 101 ... base insulating layer, 102 ... wiring, 103 ... interlayer Insulating film, 104 ... opening, 105 ... metal wiring material layer

Continued on the front page (72) Inventor Shinsuke Hirano 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo F-term in Sony Corporation (reference) 5F004 AA01 BA20 BB14 BB22 BB25 BB26 BB29 BD04 BD05 CA02 CA03 CA04 CA06 DA00 DA04 DB08 DB12 EA06 EB02 5F045 AA10 AB32 AC01 AD07 AE15 AF08 AF10 CA05 CB05 DP02 DQ10 EB03 EC05 EH17 EH20 EJ03 EJ10 EK05 EM05 EM09 GH10

Claims (25)

[Claims] 1. A substrate mounting stage comprising a composite member, having an electrostatic chuck function, and having a temperature control means, wherein the composite member has a structure of a ceramic member filled with an aluminum-based material. Base material, and a ceramic layer formed on the surface of the base material by thermal spraying, the ceramic layer has a structure in which a first ceramic layer and a second ceramic layer are laminated, A substrate mounting stage, wherein an electrode for exerting an electrostatic chuck function on the ceramic layer is formed between the first ceramic layer and the second ceramic layer. 2. The substrate mounting stage according to claim 1, wherein a positive or negative direct current is applied to the electrodes so that the ceramic layer exhibits an electrostatic chucking function. 3. The substrate mounting stage according to claim 1, wherein said temperature control means is a heater. 4. A heater is disposed inside a base material. When a linear expansion coefficient of the base material is α ₁ [unit: 10 ⁻⁶ / K], a linear expansion coefficient α of a material forming the heater is defined as α ₁ [unit: 10 ⁻⁶ / K]. _H [Unit: 10
^-6 / K], wherein (α ₁ -4) ≦ α _H ≦ (α ₁ +4) is satisfied. 5. The temperature control means comprises a pipe provided inside the base material for flowing a heat medium for temperature control, wherein the coefficient of linear expansion of the base material is α ₁ [unit: 10 ⁻⁶ / K], the coefficient of linear expansion of the pipe α _P [unit: 10 ⁻⁶ / K] is (α ₁ −
4. The substrate mounting stage according to claim 1, wherein 4) ≦ α _P ≦ (α ₁ +4) is satisfied. 6. The coefficient of linear expansion of the base material is α ₁ [unit: 10 ⁻⁶ /
K], the linear expansion coefficient α ₂₁ of the first ceramics layer
[Unit: 10 ⁻⁶ / K] is (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +
4) and the coefficient of linear expansion α of the second ceramics layer
₂₂ [unit: 10 ⁻⁶ / K] is (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +
The substrate mounting stage according to claim 1, wherein 4) is satisfied. 7. The composition of a ceramic member forming a base material is cordierite ceramics, the composition of an aluminum-based material forming a base material is aluminum and silicon, and a first ceramic layer and a second ceramic layer. 7. The substrate mounting stage according to claim 6, wherein the material constituting the substrate is Al ₂ O ₃ . 8. The composition of a ceramic member forming a base material is aluminum nitride, the composition of an aluminum-based material forming a base material is aluminum or aluminum and silicon, and a first ceramic layer and a second ceramic layer. 7. The substrate mounting stage according to claim 6, wherein the material constituting the substrate is Al ₂ O ₃ . 9. The composition of a ceramic member constituting a base material is silicon carbide, the composition of an aluminum-based material constituting a base material is aluminum or aluminum and silicon, and a first ceramic layer and a second ceramic layer. 7. The substrate mounting stage according to claim 6, wherein the material constituting the substrate is Al ₂ O ₃ . 10. The composition of a ceramic member forming a base material is aluminum oxide, the composition of an aluminum-based material forming a base material is aluminum or aluminum and silicon, and a first ceramic layer and a second ceramic layer. 7. The substrate mounting stage according to claim 6, wherein the material constituting the substrate is Al ₂ O ₃ . 11. A substrate mounting stage comprising a composite member, having an electrostatic chuck function, and provided with a temperature control means, wherein the composite member has a structure of a ceramic member filled with an aluminum-based material. Base material, and a ceramic layer formed on the surface of the base material by thermal spraying, the ceramic layer has a structure in which a first ceramic layer and a second ceramic layer are laminated, A method for manufacturing a substrate mounting stage having an electrode for causing a ceramic layer to exhibit an electrostatic chucking function between a first ceramic layer and a second ceramic layer, comprising: (A) a ceramic member (A) a step of preparing a base material in which the structure of (a) is filled with an aluminum-based material and thereby filling the structure of the ceramic member with the aluminum-based material; Forming the first ceramic layer, forming an electrode on the first ceramic layer, and then forming a second ceramic layer on the first ceramic layer including the electrode by thermal spraying. A method for manufacturing a substrate mounting stage, comprising: 12. The step (A) comprises disposing a ceramic member composed of porous cordierite ceramic in a container, and disposing an aluminum-based material composed of molten aluminum and silicon in the container. The method of manufacturing a substrate mounting stage according to claim 11, comprising a step of pouring and filling an aluminum-based material in the ceramic member by a high-pressure casting method. 13. The method of claim 1, wherein the step (A) comprises, based on a non-pressurized metal infiltration method, dissolving aluminum or an aluminum-based material containing aluminum and silicon into a ceramic member formed from aluminum nitride particles in a non-pressurized state. 12. The method for producing a substrate mounting stage according to claim 11, comprising a step of infiltrating the substrate mounting stage. 14. The step (A) comprises, based on a non-pressurized metal infiltration method, dissolving aluminum or an aluminum material containing aluminum and silicon in a ceramic member formed from silicon carbide particles in a non-pressurized state. 12. The method for producing a substrate mounting stage according to claim 11, comprising a step of infiltrating the substrate mounting stage. 15. The step (A) comprises disposing a ceramic member containing silicon carbide in a container, pouring molten aluminum or an aluminum-based material containing aluminum and silicon into the container, and subjecting the container to high-pressure casting. 12. The method according to claim 11, further comprising a step of filling the ceramic member with an aluminum-based material by a method. 16. The method of claim 1, wherein the step (A) comprises, based on a non-pressurized metal infiltration method, dissolving aluminum or an aluminum-based material containing aluminum and silicon into a ceramic member formed from aluminum oxide particles in a non-pressurized state. 12. The method for producing a substrate mounting stage according to claim 11, comprising a step of infiltrating the substrate mounting stage. 17. In the step (A), a ceramic member containing aluminum oxide is placed in a container, and molten aluminum or an aluminum-based material containing aluminum and silicon is poured into the container. 12. The method according to claim 11, further comprising a step of filling the ceramic member with an aluminum-based material by a method. 18. The method according to claim 11, wherein the material constituting the first ceramic layer and the second ceramic layer is Al ₂ O ₃ . 19. The coefficient of linear expansion of the base material is α ₁ [unit: 10 ⁻⁶ /
K], the linear expansion coefficient α ₂₁ of the first ceramics layer
[Unit: 10 ⁻⁶ / K] is (α ₁ -4) ≦ α ₂₁ ≦ (α ₁ +
4) and the coefficient of linear expansion α of the second ceramics layer
₂₂ [unit: 10 ⁻⁶ / K] is (α ₁ -4) ≦ α ₂₂ ≦ (α ₁ +
The method according to claim 11, wherein the condition (4) is satisfied. 20. A substrate processing method using a substrate processing apparatus for processing a substrate, the substrate processing apparatus including a substrate mounting stage, wherein the substrate mounting stage is composed of a composite member, The composite member has an electric chuck function and is provided with a temperature control means, and the composite member is formed by spraying a base material in which the structure of the ceramic member is filled with an aluminum-based material and a surface of the base material by a thermal spraying method. A ceramic layer, wherein the ceramic layer has a structure in which a first ceramic layer and a second ceramic layer are laminated, and a ceramic layer is provided between the first ceramic layer and the second ceramic layer. An electrode for exerting an electrostatic chuck function is formed on the layer. The substrate is fixed on the ceramic layer of the substrate mounting stage by the electrostatic chuck function, and the temperature of the substrate mounting stage is increased. While it controlled by the control means, the substrate processing method, characterized in that the processing is performed on the substrate. 21. The substrate processing method according to claim 20, wherein a positive or negative direct current is applied to the electrodes to cause the ceramic layer to exhibit an electrostatic chuck function. 22. The substrate processing method according to claim 20, wherein the processing for the substrate is a plasma etching process. 23. The substrate processing method according to claim 20, wherein the processing for the substrate is a plasma CVD process. 24. The substrate processing method according to claim 20, wherein the processing on the substrate is a sputtering process. 25. The substrate processing method according to claim 24, wherein the sputtering includes a soft etching of the substrate.