JP2000025221A - Liquid ejector and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid ejector excellent in mass productivity, and a manufacturing method thereof, in which liquid in a liquid channel can be driven efficiently using a thin film forming technology while reducing the size and increasing the density. SOLUTION: A plurality of liquid channels 12 are formed, at a pitch of 40 μm or less in a silicon single crystal substrate 1 while being partitioned by side walls 11. The channels are filled with a filler 13 and a thin film of 5 μm thick or less is deposited on each side wall 11 to form a diaphragm 15. Subsequently, the filler 13 is removed thus forming a plurality of liquid channels 12 for storing liquid and the diaphragm 15 serving as a cover. Thereafter, an electrode is formed on the diaphragm 15 and when a driving voltage is applied to the electrode, liquid in each liquid channel 12 is pressurized and ejected from an opening made at one end thereof. According to the method, a small high density liquid ejector being driven efficiently with a low driving voltage can be manufactured easily.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of a liquid discharge apparatus such as an ink jet head for discharging a liquid in a liquid flow path from a discharge port by pressurizing a liquid in a liquid flow path and a method of manufacturing the liquid discharge apparatus. .

[0002]

2. Description of the Related Art Conventionally, the above-described liquid ejecting apparatus typified by an ink-jet head has a very small size and high precision for the purpose of arranging a large number of nozzles at a high density corresponding to, for example, high-resolution printing. There is a need for a liquid ejection device. In addition, a manufacturing method which is excellent in mass productivity and capable of manufacturing these liquid ejecting apparatuses by a simple manufacturing process by performing fine processing is also required.

For example, in the case of manufacturing an ink jet head, another substrate serving as a cover member is joined to an upper portion of a substrate having a plurality of ink channels formed in a groove shape, and the other substrate is pressed by a pressing means. By forming an electrode or the like so as to function as an ink jet head, an integrated inkjet head can be manufactured.

[0004]

However, when an ink jet head as a liquid ejecting apparatus is manufactured by the above-mentioned conventional method, there are many problems. That is,
Since the cover member to be joined to the upper part of the substrate is formed so as to be movable as a diaphragm, it is desirable to have a very thin structure such as forming a film using a thin film forming technique in order to obtain good driving efficiency. However, in order to form the above-mentioned groove-like liquid flow path, it is necessary to have a structure in which a plurality of side walls are arranged in a girder shape, and a thin film must be formed on the upper part of each of these side walls. Cannot be easily manufactured, and
It is more difficult to realize a structure in which the thin film can be directly moved as a pressing means. On the other hand, if the cover member is formed by bonding using an adhesive or anodic bonding, it takes time and effort for positioning and bonding, and it is difficult to form a thin structure. Furthermore, it is not easy to arrange a plurality of ink flow paths at a high density by a method using a sintered piezo or the like as the pressurizing means, and there is a limit in manufacturing a small and high-density inkjet head having a small arrangement pitch. is there.

As described above, in the prior art, the liquid in the liquid flow path can be directly pressurized by low voltage driving, and the diaphragm is formed uniformly on a large number of side walls having a complicated structure.
There is a problem in that it is difficult to manufacture a liquid ejecting apparatus which is excellent in mass productivity and suitable for miniaturization and high density.

In view of the above, the present invention has been made in view of the above-described problem. An extremely thin diaphragm functioning as a pressurizing means is formed on a substrate having a liquid channel formed thereon by using a thin film forming technique or the like. It is an object of the present invention to provide a liquid ejecting apparatus which is excellent in mass productivity, suitable for miniaturization and high density, and a method for manufacturing the liquid ejecting apparatus.

[0007]

According to a first aspect of the present invention, there is provided a liquid ejecting apparatus, wherein a plurality of liquid passages are formed in a groove shape and are partitioned by a side wall and have at least one end with an ejection port. And a vibration plate having a thickness of 5 μm or less, the diaphragm being deformed to pressurize the liquid in each of the liquid flow paths, and Pressurizing means for discharging liquid from the outlet.

According to the present invention, a plurality of liquid flow paths are formed on the substrate in the form of a groove partitioned by side walls, and a diaphragm having a thickness of 5 μm or less is formed on the upper part thereof as a cover for the liquid flow path. Pressurizing means for deforming the diaphragm is provided. Therefore, since the vibration plate is very thin, it can be easily deformed to pressurize the liquid in the liquid flow path, and can pressurize and discharge the liquid with high driving efficiency, and is suitable for miniaturization. A liquid ejection device is provided.

According to a second aspect of the present invention, in the liquid ejecting apparatus according to the first aspect, the plurality of liquid flow paths are formed so that an arrangement pitch is 40 μm or less. I do.

According to the present invention, since the plurality of liquid flow paths formed on the substrate have a structure arranged at a pitch of 40 μm or less, a large number of liquid flow paths can be arranged at a high density. The present invention can be applied to an inkjet head having a large number of nozzles arranged.

According to a third aspect of the present invention, in the liquid ejecting apparatus according to the first or second aspect, the pressurizing means includes an electrode provided on the diaphragm and an electrode facing the electrode. A driving voltage is applied between the vibration plate and another electrode provided so as to deform the diaphragm by electrostatic force.

According to the present invention, an electrode for applying a drive voltage and a counter electrode thereof are provided on the diaphragm, and the diaphragm is deformed by electrostatic force to discharge a liquid. Provided is a liquid ejection apparatus that can efficiently eject liquid by driving.

According to a fourth aspect of the present invention, in the liquid ejecting apparatus according to the third aspect, the pressurizing means includes a five-sided pressurizing device.
It can be driven by a driving voltage of 0 V or less.

According to the present invention, since the driving voltage for deforming the diaphragm by the electrostatic force may be 50 V or less, there is no need to supply a high driving voltage, and the liquid is driven by a simple circuit configuration to drive the liquid. Provided is a liquid discharge device capable of discharging.

According to a fifth aspect of the present invention, in the liquid ejecting apparatus according to any one of the first to fourth aspects, the material of the diaphragm is silicon.

According to the present invention, since the liquid discharge device is formed using the vibration plate made of silicon, a liquid discharge device which is hardly affected by ink or the like and which can be easily finely processed is provided.

In a liquid ejecting apparatus manufacturing method according to a sixth aspect of the present invention, there is provided a substrate processing step of processing a substrate to form a plurality of liquid flow paths partitioned by side walls and having a discharge port at least at one end. In the entire liquid flow path, a filler is buried to the height of the upper end of each of the side walls, a thin film having a thickness of 5 μm or less is deposited on each of the side walls and the filler, and then the filler is removed. A thin film deposition step of forming a diaphragm, and a pressurizing unit forming step of forming a pressurizing unit that deforms the diaphragm to pressurize the liquid in the plurality of liquid flow paths and discharge the liquid from each of the discharge ports. And characterized in that:

According to the present invention, a plurality of liquid flow paths are formed on the substrate by dividing the liquid flow paths by the side walls so as to form grooves, and a filling material is buried throughout the liquid flow paths to the height of each side wall. After depositing a thin film with a thickness of 5 μm or less, the filler is removed, and the thin film is deformed to form a pressurizing means for pressurizing the liquid. I did it. Therefore, it is possible to pressurize and discharge the liquid with good driving efficiency by using a very thin movable thin film, and it is possible to manufacture a small and high-density liquid discharge device inexpensively and in large quantities.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings. In the following description, an embodiment in which a substrate on which a plurality of liquid flow paths are formed is processed to manufacture a liquid ejection apparatus in which a thin film that functions as a pressurizing unit that pressurizes the liquid in each liquid flow path is formed. Will be described.

First, a step of forming a liquid flow channel 12 in a silicon single crystal substrate 1 will be described with reference to FIG. In the present embodiment, as the substrate material for forming the liquid flow path 12, glass or various resins can be used in addition to the silicon single crystal. Here, a silicon single crystal which is easy to process and has good mass productivity is used. A case where a crystal is used as a substrate material will be described.

FIG. 1A is a perspective view showing patterning performed on a silicon single crystal substrate 1 by using photolithography. A side wall 11 (FIG. 1) that partitions a plurality of liquid channels 12 formed in a groove shape on a silicon single crystal substrate 1
The position corresponding to (b)) is masked with the resist 10.
Note that the thickness of the resist 10 may be any thickness that is sufficient to hold the resist 10 during etching described below.

At this time, the plurality of liquid channels 12 which are not masked by the resist 10 are arranged at a constant pitch, but in order to realize a high-density arrangement, they are formed so that the arrangement pitch is 40 μm or less. It is desirable. For example, when the arrangement pitch is 40 μm, the structure is such that about 600 liquid channels 12 are arranged per inch. Therefore, the arrangement pitch may be set according to the density required for the liquid ejection device.

FIG. 1B shows that the silicon single crystal substrate 1 patterned in FIG. 1A is etched to form a groove-like liquid flow channel 12 partitioned by a plurality of side walls 11. FIG. As this etching, in addition to wet etching using a chemical, dry etching using plasma or the like having excellent fine processing properties can be performed. Note that if dry etching using plasma or the like is performed, anisotropic etching can be performed, so that each liquid flow path 12 can easily have a rectangular cross-sectional structure having a vertical side surface and a horizontal bottom surface. Each liquid channel 1
After the etching is performed until the depth becomes approximately the same as the width of the substrate 2, the resist 10 is removed, and a plurality of liquid flow paths 12 partitioned on each side wall 11 are formed in the silicon single crystal substrate 1. .

Next, a process of embedding the filler 13 in each liquid channel 12 of the silicon single crystal substrate 1 will be described with reference to FIG. In the present embodiment, since the filler 13 embedded in each liquid channel 12 serves as a base for thin film deposition, a resist that solidifies at a constant temperature is used as the filler 13.

FIG. 2A is a perspective view showing a state in which the inside of the liquid flow channel 12 formed in the silicon single crystal substrate 1 is backfilled with the filler 13. That is, in each liquid channel 12,
A liquid resist is injected as the filling material 13,
The height of the surface is made to match the upper ends of the plurality of side walls 11. When the silicon single crystal substrate 1 is heated at a temperature equal to or higher than the predetermined temperature, the filling 13 is solidified.

FIG. 2B is a cross-sectional view of the silicon single crystal substrate 1 in which the filler 13 is buried in FIG. As shown in FIG. 2B, the surface of the silicon single crystal substrate 1 is a flat surface 14 in which the upper ends of the side walls 11 and the fillers 13 are alternately arranged. The surface of the silicon single crystal substrate 1 may not be the flat surface 14 but may be a downwardly convex surface or an upwardly convex surface above each liquid flow channel 12.

Next, a process of forming a diaphragm 15 by depositing a thin film on the flat surface 14 of the silicon single crystal substrate 1 formed as described above will be described with reference to FIG.

FIG. 3A is a perspective view showing a state in which a diaphragm 15 is formed by depositing a thin film on the flat surface 14 of the silicon single crystal substrate 1 by using an appropriate thin film forming technique. This thin film production technology includes vacuum deposition, sputtering,
A physical thin film forming method such as ion plating can be used. Also, plating, chemical vapor deposition,
The LB method or the like may be used.

As a material of the diaphragm 15 as a thin film, a material which is not eroded by the liquid in the liquid flow path 12 such as ink is used. For example, silicon that can be handled relatively easily can be used, and a thin film can be deposited by a sputtering method or the like. Other materials may be used as long as they are hardly affected by ink or the like and function sufficiently as a diaphragm. Further, even if the material is easily eroded by ink or the like, it can be used if the protection treatment is performed with an insulator.

In this embodiment, the diaphragm 15 as a thin film is used.
Is desirably 5 μm or less. Mainly diaphragm 1
5 is a restriction in consideration of the vibration characteristics of No. 5 and the liquid discharge amount of the liquid flow path 12. The relationship between the thickness of the diaphragm 15 and the driving conditions will be described later.

FIG. 3B is a perspective view showing a state in which the solidified filling 13 has been removed from the silicon single crystal substrate 1. That is, since the thin film deposition for forming the diaphragm 15 has been completed, the unnecessary filler 13 is removed, and the liquid passages 12 partitioned by the side walls 11 are covered with the diaphragm 15 at the upper part. Is formed. In the present embodiment, the silicon single crystal substrate 1 in which the filler 13 is embedded
In a solvent such as a resist removing solution for a certain period of time to dissolve and remove the filler 13. At this time, the solvent penetrates through the opening at one end of each liquid channel 12 of the silicon single crystal substrate 1 and dissolves the filler 13 in about 20 to 30 minutes.

The filler 13 may be any material as long as it can be removed. In addition to the resist, a wax or various oxides can be used.

In the above description, the case where a thin film is deposited on the silicon single crystal substrate 1 backfilled with the filler 13 when forming the vibration plate 15 has been described, but another method may be used. For example, an auxiliary substrate is prepared, a thin film is deposited thereon by a predetermined thin film forming technique, the auxiliary substrate is bonded to the silicon single crystal substrate 1 on which a liquid flow path is formed, and then the auxiliary substrate is removed. The procedure may be performed. At this time, the auxiliary substrate and the silicon single crystal substrate 1 can be bonded using anodic bonding or bonding by atomic force.

Next, a process of forming an electrode on the diaphragm 15 to deform the diaphragm 15 by electrostatic force will be described with reference to FIG.

FIG. 4A shows an insulating film 16 on the diaphragm 15.
FIG. 3 is a perspective view showing a state in which a plurality of independent electrodes 17 are formed along the upper part of each liquid flow path 12 through the respective liquid channels 12. Here, since it is necessary to electrically separate the plurality of independent electrodes 17 from each other, the insulating film 1 is entirely formed on the diaphragm 15.
6 is formed. The insulating film 16 can also be formed by using the above-described physical thin film forming method, but may be formed by using a chemical thin film forming method since an inorganic material is used.

The plurality of independent electrodes 17 are provided on the insulating film 16 so as to extend along the respective liquid flow paths 12, and are connected to control wirings 17a so that they can be individually controlled. Therefore, it is possible to individually discharge the liquid in each liquid channel 12.

FIG. 4B is a perspective view showing a state in which a plurality of girders 18 are attached between the independent electrodes 17 on the insulating film 16. The plurality of girders 18 serve as support members for supporting a common electrode 19 (FIG. 4C) described later. FIG.
As shown in (b), it is arranged at a position overlapping the upper portions of the plurality of side walls 11.

Although the material of the beam 18 can be selected relatively freely, it is desirable to use an inorganic material in the case where the material is attached by anodic bonding without using an adhesive. Multiple digits 18
May be formed on the insulating film 16 and then etched to form the shape of the spar 18.

FIG. 4C is a perspective view showing a state in which a common electrode 19 is formed on a plurality of girders 18 as support members. The common electrode 19 is made of metal or the like, and is arranged so as to cover the entire silicon single crystal substrate 1. Then, a voltage is applied in a state where the voltage is applied to the plurality of independent electrodes 17 described above, and acts to deform the diaphragm 15 up and down due to mutual electrostatic force. Note that the common electrode 19 is also provided with a control wiring 19a.

Next, the operation of the liquid ejection apparatus formed as described above will be described with reference to FIG.

FIG. 5A is a cross-sectional view of the liquid discharge device, showing a state where a drive voltage is applied so that the independent electrode 17 and the common electrode 19 are charged with the same sign. It is. In FIG. 5A, the liquid flow path 1
One independent electrode 1 formed via an insulating film 16 on
7 is applied with a predetermined positive voltage, and its surface is positively charged. Similarly, a predetermined positive voltage is applied to the common electrode 19 supported by the plurality of girders 18 and opposed to each of the independent electrodes 17, and the surface thereof is positively charged. Therefore, the independent electrode 17 and the common electrode 19 repel each other due to the repulsive action of the static electricity, and the diaphragm 15 that covers one liquid flow path 12 located below the independent electrode 17 is deformed in a downwardly convex shape. . Therefore, the volume of the liquid flow path 12 is reduced and pressure is applied to the liquid inside, so that the liquid is discharged from the discharge port.

FIG. 5B shows a state in which a drive voltage is applied to each of the independent electrode 17 and the common electrode 19 so that electric charges having different signs are charged. In FIG. 5B, unlike FIG. 5A, a predetermined negative voltage is applied to one of the independent electrodes 17 so that the surface thereof is negatively charged. The surface is positively charged by applying a positive voltage. Therefore, the independent electrode 17 and the common electrode 19 are attracted to each other by the action of electrostatic attraction, and the portion of the diaphragm 15 that covers one liquid flow path 12 located below the independent electrode 17 is deformed upwardly in a convex shape. Therefore, the volume of the liquid flow path 12 increases and the pressure of the liquid inside decreases, and the liquid is sucked from the opening formed at one end. At this time, when the application of the drive voltage to the independent electrode 17 and the common electrode 19 is stopped, the deformed diaphragm 15 returns to its original state,
Since the volume of the liquid flow path 12 decreases and returns, the liquid in the liquid flow path 12 is pressurized, and the liquid is discharged from the discharge port.

The common electrode 19 is not necessarily required to be common to the entire surface, and may be configured to correspond to each individual electrode 17. Further, the discharge ports formed in the liquid flow path 12 may be formed on any of the six surfaces surrounding the liquid flow path 12 as long as liquid discharge is possible.

Next, the relationship between the driving conditions for discharging the liquid and the thickness of the diaphragm 15 will be described. First, when the diaphragm 15 is driven by being deformed by electrostatic force, the displacement of the diaphragm 15 is expressed by the following equation.

[0045]

(Equation 1) Here, W: displacement amount of the diaphragm 15 (m) P: pressure (N / m2) h: thickness of the diaphragm 15 (m) a: half of the width of the liquid flow channel 12 (m) E: Young's modulus The suction pressure due to electrostatic force is expressed by the following equation.

[0046]

(Equation 2) Here, p: adsorption pressure (N / m2) ε: dielectric constant (F / m) V: drive voltage (V) t: gap (m) between diaphragm 15 and common electrode 19 Also, volume deformation of diaphragm 15 Can be approximated as follows.

[0047]

(Equation 3) However, M: the amount of volume deformation (m3) b: the length of the long side of the liquid flow path 12 The calculation may be performed using the equations shown in Equations 1 to 3 above. Here, as an example, h = 1 μm, t = 1 μm, ε
= 8.8 × 10 −12 (in vacuum) and E = 11 × 10 10 (Young's modulus of silicon) to determine the relationship between the drive voltage V and the volume deformation M. At this time, since the volume deformation amount M corresponds to the liquid discharge amount discharged from the liquid flow path 12, the relationship between the drive voltage V and the liquid discharge amount can be understood. As a result of the calculation, when V = 50 (V), the liquid ejection amount is 0.28 (p
l), when V = 100 (V), the liquid ejection amount 1.1 (p
l), when V = 150 (V), the liquid ejection amount 2.5 (p
l), when V = 200 (V), the liquid ejection amount is 4.5 (p
1).

On the other hand, as another calculation example, when the thickness h of the diaphragm 15 is twice that of the above example, that is, h = 2 μm
The relationship between the drive voltage V and the liquid ejection amount is obtained by performing calculation for the case of m. Then, when V = 50 (V), the liquid ejection amount is 0.03 (pl), when V = 100 (V), the liquid ejection amount is 0.13 (pl), and when V = 150 (V), the liquid ejection amount is 0. .31 (pl), when V = 200 (V), the liquid ejection amount is 0.55 (pl), and when V = 500 (V), the liquid ejection amount is 3.48 (pl). It can be seen that the liquid ejection amount with respect to the voltage is significantly reduced.

Therefore, in order to efficiently drive the diaphragm 15 with a lower driving voltage, it is advantageous to reduce the thickness of the diaphragm 15. Actually, the optimum thickness is set in consideration of the strength of the diaphragm 15 and the difficulty of depositing the thin film. The thickness of the vibration plate 15 is desirably 5 μm or less as described above. In particular, if the thickness is in the range of 0.2 μm to 2 μm, it is possible to obtain an overall excellent liquid ejecting apparatus. .

In order to reduce the power consumption of the liquid ejection device or to simplify the drive circuit, the drive voltage must be 5
It is desirable to use at 0V or less. Also in this case, as shown in the above calculation, if the driving conditions are appropriately determined within a range in which the thickness of the diaphragm 15 and the required liquid discharge amount are appropriately maintained, a driving voltage of 50 V or less can be easily realized. It is possible.

Further, depending on the driving conditions, it is possible to realize a liquid discharge apparatus that can be driven with a smaller driving voltage. For example, if the driving voltage is set to about 5 V or less, the IC can operate within the operating voltage range of a general IC, which is very advantageous in terms of simplification of the circuit configuration and reduction of the cost of the device. Further, by performing the low-voltage driving of the vibration plate 15 in this manner, the effect is large in terms of insulation of the liquid ejection device, prevention of leakage of stored charges, reduction of crosstalk between the adjacent liquid flow paths 12, and the like. .

Thus, according to the liquid ejecting apparatus according to the present embodiment, utilizing the repulsion and suction action by the electrostatic force,
The very thin diaphragm 15 can be deformed in a wide range from an upwardly convex state to a downwardly convex state.
5 can perform liquid ejection with high drive efficiency that can make a large volume change. Further, by reducing the thickness of the vibration plate 15, it is possible to pressurize the liquid with a smaller driving voltage. Further, by reducing the arrangement pitch of each liquid flow path 12, a large number of liquid flow paths 12 can be arranged at high density.

Further, according to the manufacturing method of the liquid discharge apparatus according to the present embodiment, the filling material 13 is once embedded, the diaphragm 15 is deposited thereon in a thin film, and then the filling material 13 is removed. Side wall 1 that partitions each liquid flow path 12
The vibration plate 15 is formed on the substrate 1, and a complicated structure in which the vibration plate 15 serves as a cover for the liquid flow path 12 can be realized relatively easily. In addition, a common electrode 17 is provided on the diaphragm 15 and a common electrode 19 is further disposed on the upper portion thereof so as to face the same.
Since the liquid ejecting device 5 is also made to function as a movable thin film, it becomes possible to mass-produce a large amount of liquid ejecting devices having a complicated and fine structure at low cost.

In the above-described embodiment, the case where the diaphragm 15 of the liquid discharge device is formed by depositing a thin film by using a thin film forming technique has been described. Any method may be used as long as it can form the diaphragm, and the diaphragm may be formed integrally with the entire liquid ejection apparatus by using, for example, etching.

In the above-described embodiment, several liquid flow paths 12 are provided in the silicon single crystal substrate 1 of the liquid discharge device.
Has been described, but in practice, a larger number of liquid flow paths 12 can be formed to manufacture a liquid ejecting apparatus. As described above, if the arrangement pitch of each liquid flow path 12 is set to a small value of 40 μm or less to manufacture a liquid ejection device, hundreds to thousands of liquid flow paths 12 are arranged in parallel within one inch. It is possible to manufacture a liquid ejection device.

In the above-described embodiment, the case where the method of deforming the diaphragm 15 using electrostatic force is used as the pressurizing means of the liquid ejecting apparatus, but other pressurizing means is used. You may. For example, the pressing means may be configured using a piezoelectric element.

The liquid ejection device according to the embodiment described above can be easily applied to an ink jet head.
For example, if the liquid inside each liquid flow path 12 is used as ink, ink is supplied from an opening formed at one end thereof, and a nozzle is formed at the other end to discharge ink.
An ink jet head can be easily realized. For example, when the arrangement pitch of each liquid flow path 12 is set to 10 μm, it is possible to easily manufacture a high-density ink jet head in which 2400 or more liquid flow paths 12 exist in one inch. Key control and the like can be easily performed.

Further, the liquid ejecting apparatus according to the embodiment described above can be applied to various micro instruments and devices such as a pipette for micro titration as an application field of the micromachining technology. .

[0059]

According to the first aspect of the present invention, since a very thin diaphragm having a thickness of 5 μm or less is formed as a cover for the liquid flow path, the diaphragm can be deformed with good driving efficiency. Liquid can be discharged, and a liquid discharge device suitable for miniaturization can be realized.

According to the second aspect of the present invention, 40 μm
Since a large number of liquid channels are arranged side by side at the following arrangement pitch, a high density can be easily realized, and the invention can be applied to an ink jet head having a large number of nozzles arranged at a high density.

According to the third aspect of the present invention, since the diaphragm is deformed by the electrostatic force to discharge the liquid, it is possible to realize a liquid discharge apparatus capable of efficiently discharging the liquid with low voltage driving. .

According to the fourth aspect of the present invention, since the vibrating plate is driven with a driving voltage of 50 V or less, a circuit or the like for supplying a high voltage is unnecessary, and a simple and inexpensive liquid discharging apparatus is used. Can be realized.

According to the fifth aspect of the invention, since the material of the thin film is made of silicon, it is possible to realize a liquid ejecting apparatus which is hardly corroded by ink or the like and which can be easily finely processed.

According to the sixth aspect of the present invention, a liquid ejecting apparatus which can form a very thin movable thin film and eject the liquid with good driving efficiency, and which can be arranged in a small and high-density arrangement is inexpensive. And it can be manufactured in large quantities.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a step of forming a liquid flow path in a silicon single crystal substrate in an embodiment of the present invention, wherein (a) is a perspective view showing patterning of the silicon single crystal substrate using photolithography, FIG. 4B is a perspective view showing a state in which a groove-like liquid flow path is formed in the silicon single crystal substrate by etching.

FIGS. 2A and 2B are diagrams illustrating a process of embedding a filler in an ink flow path of a silicon single crystal substrate in the embodiment of the present invention. FIG. A perspective view showing a returned state, (b) is X- of (a).
It is X sectional drawing.

FIG. 3 is an explanatory view of a step of forming a diaphragm by depositing a thin film on a flat surface of a silicon single crystal substrate in the embodiment of the present invention. FIG. 2B is a perspective view showing a state where a thin film is deposited, and FIG. 2B is a perspective view showing a state where a filler is removed from a silicon single crystal substrate.

FIG. 4 is an explanatory view of a step of forming an electrode for deforming the diaphragm by electrostatic force in the upper part of the diaphragm in the embodiment of the present invention. A perspective view showing a state in which a plurality of independent electrodes are formed along the upper part of the liquid flow path, and a perspective view showing a state in which a plurality of girders are attached between the independent electrodes on the insulating film,
(C) is a perspective view showing a state where a common electrode is formed on a plurality of girders.

5A and 5B are diagrams for explaining the operation of the liquid ejection apparatus according to the embodiment of the present invention. FIG. 5A shows a state in which a drive voltage is applied so that the independent electrode and the common electrode are charged with the same sign. FIG. 4B is a cross-sectional view of the liquid discharge device in a state where a drive voltage is applied so that charges of different signs are respectively charged to the independent electrode and the common electrode.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Silicon single crystal substrate 10 ... Resist 11 ... Side wall 12 ... Liquid flow path 13 ... Filler 14 ... Flat surface 15 ... Vibration plate 16 ... Insulating film 17 ... Independent electrode 18 ... Digit 19 ... Common electrode

Claims (6)

[Claims] A substrate having a plurality of liquid flow paths formed in a groove shape and having a discharge port at at least one end, and a cover covering the whole of the plurality of liquid flow paths, having a thickness of 5 μm or less. A liquid ejecting apparatus, comprising: a vibrating plate having a pressure; and pressurizing means for deforming the vibrating plate to pressurize the liquid in each of the liquid flow paths and discharge the liquid from each of the discharge ports. 2. An arrangement pitch of the plurality of liquid channels is four.
The liquid ejecting apparatus according to claim 1, wherein the liquid ejecting apparatus is formed to have a thickness of 0 µm or less. 3. The pressurizing means applies a drive voltage between an electrode provided on the diaphragm and another electrode provided opposite to the electrode, and applies an electrostatic force to the diaphragm. The liquid ejecting apparatus according to claim 1, wherein the liquid ejecting apparatus is deformed by: 4. The liquid discharging apparatus according to claim 3, wherein said pressurizing means is drivable by a driving voltage of 50 V or less. 5. The liquid ejecting apparatus according to claim 1, wherein a material of the diaphragm is silicon. 6. A substrate processing step of processing a substrate to form a plurality of liquid flow paths partitioned by a side wall and having a discharge port at at least one end; A thin film deposition step of burying the filler to the height of the upper end, depositing a thin film with a thickness of 5 μm or less on each of the side walls and the filler, and then removing the filler to form a diaphragm; Pressurizing means for forming a pressurizing means for deforming a diaphragm to pressurize the liquid in the plurality of liquid flow paths and discharge the liquid from each of the discharge ports; Device manufacturing method.