JP2000022077A - Semiconductor integrated circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sufficient EMI measure and ease manufacturing even when an external resistance is eliminated by connecting serially a plurality of polysilicon resistances or thin-film resistances between a bonding pad and ground. SOLUTION: A battery power supply BAT is connected with a semiconductor integrated circuit IC through a bonding pad 11. Polysilicon resistances R2 and R3 are connected in series between the bonding pad 11 and ground GND, and the connecting point j1 with the polysilicon resistances R2 and R3 is connected with the connecting point j2 between diodes 13 and 14 and the negative side of inversion input terminal of a comparator 15. The positive side of non- inversion input terminal of the comparator 15 is connected to the positive side of a power supply Vref to give a reference voltage, and the negative side of the power supply Vref is connected to the ground GND, and then the output terminal Vout of the comparator 15 is connected to an internal circuit. Further, the polysilicon resistances R2 and R3 can be formed simultaneously in a step for forming a semiconductor integrated circuit, thereby easing manufacturing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit, and more particularly, to a semiconductor integrated circuit (hereinafter, also referred to as an IC) formed on a P-type substrate or the like.

[0002]

2. Description of the Related Art Generally, elements in an IC are separated by a reverse bias of a PN junction. Since a general IC is configured on a P-type substrate (sub-slate), the input voltage to the IC is a voltage lower than the substrate voltage, more precisely, the substrate voltage−
When the forward voltage of the diode is reached, a parasitic diode operates, causing destruction or malfunction of the IC.

In order to protect the internal circuit of the IC from static electricity noise and the like, a plurality of elements called an electrostatic protection diode are usually arranged in series around a bonding pad between a power supply and a ground (GND). The connection point is directly connected to the bonding pad. Since the electrostatic protection diode is generally connected between the bonding pad and GND (IC substrate voltage) and between the bonding pad and the power supply, the bonding pad has a voltage of (GND-diode voltage) or less. , (Power supply voltage + diode voltage) or more cannot be input.

However, the bonding pad (I
C) may be affected by surge noise of ± several hundred volts via harness, or may be affected by electromagnetic wave noise (hereinafter referred to as EMI). For EMI countermeasures, a resistance of several k to several tens k ohms is usually required. Therefore,
Conventionally, as shown in FIG. 9, an external resistor R1 of several k to several tens k ohms is connected to the bonding pad 11 of the IC.

[0005]

However, connecting an external resistor R1 to the outside of the IC requires a lot of time and effort in manufacturing and increases the number of parts, which is not desirable. On the other hand, it is conceivable that the connection of the external resistor R1 is stopped and the resistor is arranged inside the IC and connected to the bonding pad 11. However, if this resistor is constituted by a diffusion resistor, the following problems arise. That is, since the diffusion resistance is formed by performing P-type diffusion in the N-type epitaxial layer, a parasitic diode exists between the resistance itself (P-type) and the epitaxial layer (N-type). Therefore, it is usually necessary to connect the epitaxial layer to a potential higher than the voltage applied to the diffusion resistor so that the parasitic diode does not operate. On the other hand, since the voltage that can be applied to the epitaxial layer is limited to the breakdown voltage of the IC or less, a voltage higher than the breakdown voltage of the IC cannot be applied to the diffusion resistor. Therefore, there is a problem that it is difficult to substitute the conventional external resistor R1 with the diffusion resistor.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and a resistor serving as a conventional external resistor is formed in a semiconductor integrated circuit without causing a parasitic diode. It is another object of the present invention to provide a semiconductor integrated circuit having a resistor that can function sufficiently.

[0007]

To achieve the above object, a semiconductor integrated circuit (1) according to the present invention comprises:
A plurality of polysilicon resistors or thin film resistors are interposed in series between the bonding pad and the ground, and the dividing points of these resistors are connected to the connection points between the internal circuit and one or more electrostatic protection diodes. It is characterized by being.

The resistors that can be realized in a semiconductor integrated circuit include a base diffused resistor and a diffused resistor for high resistance,
Examples include a polysilicon resistor used for a gate electrode of an OSFET and the like, and a thin film resistor formed by a method such as vacuum deposition using tantalum or nichrome as a material. As described above, a voltage higher than the withstand voltage of the semiconductor integrated circuit cannot be applied to the diffusion resistor. However, the polysilicon resistor and the thin film resistor have no parasitic diode due to their structure, and the It can be handled in the same way as a resistor. Therefore, even if a voltage lower than the substrate voltage of the semiconductor integrated circuit or a voltage higher than the breakdown voltage of the semiconductor integrated circuit is applied to the polysilicon resistor or the thin film resistor, these resistors are not destroyed.

Therefore, according to the semiconductor integrated circuit (1), by forming the polysilicon resistor or the thin film resistor having an appropriate value, a signal having a voltage higher than the withstand voltage of the semiconductor integrated circuit is applied to the bonding pad. Input, and even if external resistors are omitted, sufficient EM
It is also possible to take I measures. In addition, unlike the conventional external resistor, the polysilicon resistor or the thin film resistor can be formed simultaneously in the process of forming the semiconductor integrated circuit, so that it is easy to manufacture and does not require the trouble of external mounting. Therefore, the cost of the electronic device as a whole can be reduced by reducing the number of components and the number of manufacturing steps.

[0010] Further, a semiconductor integrated circuit (2) according to the present invention.
A plurality of polysilicon resistors or thin film resistors are interposed in series between a bonding pad and a positive voltage source, and the dividing point of these resistors is divided into an internal circuit and one or more electrostatic protection diodes. Is connected to the connection point.

According to the semiconductor integrated circuit (2), a negative voltage or a voltage lower than the substrate voltage of the semiconductor integrated circuit is applied to the bonding pad by forming the polysilicon resistor or the thin film resistor having an appropriate value. Signal to be input. In addition, unlike the conventional external resistor, the polysilicon resistor or the thin film resistor can be formed simultaneously in the process of forming the semiconductor integrated circuit, so that it is easy to manufacture and does not require the trouble of external mounting. Therefore, the cost of the electronic device as a whole can be reduced by reducing the number of components and the number of manufacturing steps.

Further, a semiconductor integrated circuit (3) according to the present invention.
Is a bonding pad and one or more electrostatic protection diodes.
A polysilicon resistor or a thin film resistor is interposed between the gate and the connection point of the gate, and a surge absorbing clamp circuit is interposed between the electrostatic protection diode and an internal circuit. And

According to the semiconductor integrated circuit (3), even if an excessively large positive or negative voltage acts on the bonding pad, a voltage causing a malfunction or a voltage at which the circuit is broken is applied to the internal circuit. Does not work.

Further, a semiconductor integrated circuit (4) according to the present invention.
In the semiconductor integrated circuit (1) or (2), a surge absorption clamp circuit is interposed between the connection point of the electrostatic protection diode and the internal circuit. And

According to the semiconductor integrated circuit (4), even if an excessively large positive or negative voltage acts on the bonding pad, a voltage causing a malfunction or a voltage at which the circuit is broken is applied to the internal circuit. Does not work.

Further, a semiconductor integrated circuit (5) according to the present invention.
A gain setting resistor made of polysilicon or a thin film is interposed between a bonding pad and an electrostatic protection diode, and a polysilicon or thin film is connected between the electrostatic protection diode and an internal circuit. Another gain setting resistor is interposed, the inverting input terminal of the inverting operational amplifier is connected to the connection point between the electrostatic protection diode and the other gain setting resistor, the non-inverting input terminal is grounded, and the output terminal Is connected to a connection point between the internal circuit and the another gain setting resistor.

According to the semiconductor integrated circuit (5), a negative voltage acting on the bonding pad or a voltage equal to or lower than the substrate voltage of the semiconductor integrated circuit can be converted into a desired positive voltage without externally connecting a resistor. .

A semiconductor integrated circuit according to the present invention (6)
A gain setting resistor made of polysilicon or a thin film is interposed between a bonding pad and an electrostatic protection diode, and a polysilicon or thin film is connected between the electrostatic protection diode and an internal circuit. Another gain setting resistor is interposed, an inverting input terminal of the inverting operational amplifier is connected to a connection point between the electrostatic protection diode and the other gain setting resistor, and a non-inverting input terminal is a positive reference voltage source. And an output terminal is connected to a connection point between the internal circuit and the another gain setting resistor.

According to the semiconductor integrated circuit (6), a high voltage equal to or higher than the power supply voltage of the semiconductor integrated circuit acting on the bonding pad can be converted to a positive desired voltage equal to or lower than the power supply voltage without externally connecting a resistor. It can be converted.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the semiconductor integrated circuit according to the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram showing a semiconductor integrated circuit according to the embodiment (1), in which BAT indicates a battery power supply, and the battery power supply BAT is connected to a semiconductor integrated circuit IC via a bonding pad 11. I have. Bonding pad 11
And the ground GND, the polysilicon resistors R2, R
3 are connected in series.
The connection point j1 between the gate and the polysilicon resistor R3 is the diode 1
3 and a connection point j2 between the diode 14 and the inverting input terminal of the comparator 15. The non-inverting input terminal + of the comparator 15 is a power supply Vre for applying a reference voltage.
f, the negative side of the power supply Vref is the ground G
ND, and the output terminal Vout of the comparator 15
Are connected to an internal circuit (not shown). The cathode of the diode 13 is connected to the power supply Vcc, and the diode 1 is connected to the power supply Vcc.
The node 4 is connected to the ground GND.

Many electronic control devices for vehicles need to monitor and control the voltage of the battery power supply BAT. In the case of the semiconductor integrated circuit according to the embodiment (1) configured as described above, since the voltage dividing resistor is formed by the polysilicon resistors R2 and R3, the voltage of the power supply Vcc, for example, 5V is applied to the bonding pad 11. Even if a higher voltage of the battery power supply BAT, for example, 8 V is applied, the polysilicon resistors R2 and R3 are not destroyed. Further, a voltage obtained by dividing the voltage of the battery power supply BAT by the polysilicon resistor R2 and the polysilicon resistor R3 (dropped to an appropriate value) can be input to the inverting input terminal of the comparator 15. Power supply Vc of comparator 15
The voltage of c (5 V) is the voltage of the battery power supply BAT (8 V)
Even if the voltage is lower, the voltage of the battery power supply BAT can be monitored without externally connecting a resistor.

The polysilicon resistor R2 and the polysilicon resistor R3 are different from conventional external resistors and can be formed simultaneously in the process of forming a semiconductor integrated circuit. No hassle. Therefore, in terms of the electronic control device as a whole, the number of parts can be reduced,
The number of manufacturing steps can be reduced, and costs can be reduced.

FIG. 2 is a circuit diagram showing a semiconductor integrated circuit according to the embodiment (2). In the figure, BAT indicates a battery power supply, and the battery power supply BAT is connected to the semiconductor integrated circuit IC via a bonding pad 20. It is connected. An output line from the battery power supply BAT is connected to the semiconductor integrated circuit IC via the bonding pad 11, and polysilicon resistors R4 and R5 are connected in series between the bonding pad 11 and the ground GND. A connection point j1 between the resistor R4 and the polysilicon resistance R5 is a connection point j between the diode 13 and the diode 14.
2 and the non-inverting input terminal + of the error amplifier 16. The inverting input terminal-of the error amplifier 16 is connected to the + side of a power supply Vref for providing a reference voltage.
The negative side of f is connected to the ground GND, and the error amplifier 1
The output terminal Vout 6 is connected to the inverting input terminal of the PWM comparator 17. PWM comparator 17
The oscillator 18 is connected to the non-inverting input terminal + of the
The output terminal Vout of the comparator 17 is connected to the base of the NPN transistor TR1. The emitter of the NPN transistor TR1 is connected to the ground GND, and the collector is connected to the bonding pad 19. The cathode of the diode 13 is connected to the power supply Vcc, and the anode of the diode 14 is connected to the ground GND.

A coil 21 and a diode 22 are provided on the output line of the battery power supply BAT.
A bonding pad 19 is connected to a connection point j3 between the diode 22 and the diode 22, a cathode of the diode 22 is connected to one end of a capacitor 23, and the other end of the capacitor 23 is connected to ground GND. .

Some electronic control devices for vehicles require a voltage higher than the voltage of the battery power supply BAT, for example, 14V. An airbag system or the like requires a voltage of about 30V. In the case of the semiconductor integrated circuit according to the embodiment (2) which is the switching regulator (step-up regulator) configured as described above, the voltage dividing resistor is constituted by the polysilicon resistors R4 and R5. And the bonding pad 11 has a battery power supply BAT.
Voltage (for example, about 14 V) was stepped up,
For example, even if the voltage is higher than 30 V, it can be applied without any problem. Further, a voltage obtained by dividing the stepped-up voltage by the polysilicon resistor R4 and the polysilicon resistor R5 (dropped to an appropriate value) can be input to the non-inverting input terminal + of the error amplifier 16. Even if the voltage of the power supply Vcc of the error amplifier 16 is lower than the stepped-up voltage, the stepped-up voltage can be monitored without externally connecting a resistor.

Unlike the conventional external resistors, the polysilicon resistors R4 and R5 can be formed simultaneously in the process of forming the semiconductor integrated circuit. No hassle. Therefore, in terms of the electronic control device as a whole, the number of parts can be reduced,
The number of manufacturing steps can be reduced, and costs can be reduced.

FIG. 3 is a circuit diagram showing a semiconductor integrated circuit according to the embodiment (3). A negative power supply voltage is applied to the semiconductor integrated circuit IC via the bonding pad 11. Polysilicon resistors R6 and R7 are connected in series between the bonding pad 11 and the power supply Vcc, and a connection point j1 between the polysilicon resistors R6 and R7 is connected to the diodes 13 and 14. And the inverting input terminal of the comparator 30. The non-inverting input terminal + of the comparator 30 is connected to a dividing point j4 of the power supply Vcc, which is provided with a resistor R8 and a resistor R9, for applying a reference voltage.
The one end of the resistor R9 is connected to the ground GND, and the output terminal Vout of the comparator 30 is connected to an internal circuit (not shown). The cathode of the diode 13 is connected to the power supply Vcc, and the anode of the diode 14 is connected.
Is connected to the ground GND.

Among the electronic control devices mounted on a vehicle, a millimeter-wave laser
An RF amplifier or the like using a GaAs semiconductor integrated circuit used for a receiving circuit or the like is driven by two positive and negative power supplies and requires a negative power supply voltage. In the case of the semiconductor integrated circuit according to the embodiment (3) configured as described above, since the voltage dividing resistor is configured by the polysilicon resistors R6 and R7, even if a negative voltage acts, the semiconductor integrated circuit is destroyed. However, even a negative voltage can be applied to the bonding pad 11. Further, a voltage obtained by dividing the negative power supply voltage by the polysilicon resistor R6 and the polysilicon resistor R7 (adjusted to an appropriate value) can be input to the inverting input terminal of the comparator 30. Power supply Vc
Even if the voltage c is positive, a negative voltage can be monitored without externally connecting a resistor.

The polysilicon resistors R6 and R7 are different from conventional external resistors and can be formed simultaneously in the process of forming a semiconductor integrated circuit. Therefore, the polysilicon resistors R6 and R7 are easy to manufacture and require time and effort for external mounting. do not do. Therefore, in terms of the entire electronic control device, the number of parts and the number of manufacturing steps are reduced, and the cost can be reduced.

FIG. 4 is a circuit diagram showing a semiconductor integrated circuit according to the embodiment (4). One end of a polysilicon resistor R10 is connected to the bonding pad 11 on the input side. The end is a connection point j2 between the diode 13 and the diode 14, and a comparator 40.
Are connected to the inverting input terminal −. Comparator 40
Is connected to a power supply Vcc
Is connected to a dividing point j4 by the resistors R8 and R9 of
One end of the resistor R8 is connected to the power supply Vcc, one end of the resistor R9 is connected to the ground GND, and the output terminal Vout of the comparator 40 is connected to an internal circuit (not shown). The cathode of the diode 13 is connected to the power supply Vcc, and the anode of the diode 14 is connected to the ground GND.

A clamp circuit CL is interposed between the connection point j2 and the inverting input terminal-. The clamp circuit CL includes an NPN transistor TR2 and a PNP transistor TR3. The collector of the NPN transistor TR2 is connected to the power supply Vcc, and the emitter is a connection point j.
5 is connected to the emitter of the PNP transistor TR3, and the base is connected to a connection point j7 between the resistor R11 and the diode 42. The collector of the PNP transistor TR3 is connected to the ground GND, and the base is a resistor R1.
1 and a connection point j6 of the diode 41.
The anode of the diode 41 is connected to the power supply Vcc, and the cathode of the diode 42 is connected to the ground GND. A clamp circuit CL includes these NPN transistor TR2, PNP transistor TR3, diode 41, diode 42, and resistor R11.

An excessively large positive or negative signal such as electromagnetic noise from the outside may be input to a semiconductor integrated circuit of a vehicle-mounted electronic control device. The embodiment (4) configured as described above. In the case of the semiconductor integrated circuit according to the above, since the resistor for removing noise is constituted by the polysilicon resistor R10, the polysilicon resistor R10 is not destroyed even if an excessively large positive or negative voltage acts on the bonding pad 11. . Moreover, since the input to the inverting input terminal of the comparator 40 is performed via the clamp circuit CL, even if an excessively large positive or negative voltage acts on the bonding pad 11, the inverting input terminal of the comparator 40 is not applied. A voltage lower than the GND voltage and higher than the voltage of the power supply Vcc will not be input.
A malfunction of the comparator 40 can be prevented.

Also, unlike the conventional external resistor, the polysilicon resistor R10 can be formed simultaneously in the process of forming the semiconductor integrated circuit, so that the polysilicon resistor R10 is easy to manufacture.
No need for external attachment. Therefore, in terms of the entire electronic control device, the number of parts and the number of manufacturing steps are reduced, and the cost can be reduced.

FIG. 5 is a circuit diagram showing a semiconductor integrated circuit according to the embodiment (5). A negative power supply voltage is applied to the semiconductor integrated circuit IC via the bonding pad 11. The bonding pad 11 has a polysilicon resistor R1.
2 is connected to one end, and the other end of the polysilicon resistor R12 is connected to a connection point j between the diode 13 and the diode 14.
2 and the inverting input terminal of the inverting amplifier 50. The non-inverting input terminal + of the inverting amplifier 50 is ground G
The output terminal Vout is connected to a connection point j9 between the polysilicon resistor R13 and the inverting input terminal of the comparator 30. The non-inverting input terminal + of the comparator 30 is connected to a division point j10 of the power supply Vcc, which is provided with a resistor R14 and a resistor R15, for applying a comparison voltage.
4 is connected to the power supply Vcc, one end of the resistor R15 is connected to the ground GND, and the output terminal Vout of the comparator 30 is connected to the power supply Vcc via an internal circuit (not shown) and the resistor R16. . The cathode of the diode 13 is connected to the power supply Vcc, and the anode of the diode 14 is connected to the ground GND.

Among the electronic control devices mounted on a vehicle, a millimeter-wave laser
An RF amplifier or the like using a GaAs semiconductor integrated circuit used for a receiving circuit or the like is driven by two positive and negative power supplies and requires a negative power supply voltage. In the case of the semiconductor integrated circuit according to the embodiment (5) configured as described above, the inverting amplifier 5
Since the gain setting resistor that determines the gain of 0 is made up of the polysilicon resistors R12 and R13, a negative voltage can be applied to the bonding pad 11 even if it is negative. Further, since the negative voltage is inverted and output by the inverting amplifier 50 and input to the inverting input terminal of the comparator 30, even if the voltage of the power supply Vcc of the comparator 30 is smaller than the absolute value of the negative voltage, the resistance is reduced. Without external
Negative voltages can be monitored.

For example, the resistance values of the resistors R14 and R15 are set so that the comparison voltage at the connection point j10 is 2 V, and the polysilicon resistor R12 and the polysilicon resistor R12 are set so that the gain of the inverting amplifier 50 becomes 1/5. Silicon resistor R13
When the resistance value is set as shown in FIG. 6, as shown in FIG.
The negative voltage input from the bonding pad 11 is -1.
A connection point j9 output from the inverting amplifier 50 at 0V
Becomes 2 V, and the voltage output from the output terminal Vout of the comparator 30 switches from high to low. Therefore, it is possible to monitor the voltage of −10 V input from the bonding pad 11.

According to the semiconductor integrated circuit of the embodiment (5), by setting the values of the polysilicon resistor R12, the polysilicon resistor R13, the resistor R14 and the resistor R15 to desired values, a wide range can be obtained. Negative input voltages can be monitored.

The polysilicon resistors R12 and R13
Unlike conventional external resistors, they can be formed simultaneously in the process of forming a semiconductor integrated circuit, so that they are easy to manufacture and do not require external time and effort. Therefore, in terms of the entire electronic control device, the number of parts and the number of manufacturing steps are reduced, and the cost can be reduced.

FIG. 7 is a circuit diagram showing a semiconductor integrated circuit according to the embodiment (6). The semiconductor integrated circuit shown in FIG. 7 is different from the semiconductor integrated circuit shown in FIG. The point is that the non-inverting input terminal + of the amplifier 50 is connected not to the ground GND but to the power supply Vref for applying the reference voltage. Therefore, description of other detailed configurations is omitted here.

According to the semiconductor integrated circuit of the embodiment (6), for example, the comparison voltage at the connection point j10 is 3 V
The resistance values of the resistors R14 and R15 are set so that the resistance of the polysilicon resistor R12 and the resistance of the polysilicon resistor R13 are set so that the gain of the inverting amplifier 50 becomes 1/5. When the voltage of Vref is set to 5 V, as shown in FIG. 8, when the positive voltage input from the bonding pad 11 becomes 15 V, the signal output from the output terminal Vout of the comparator 30 becomes low. The input is switched from-to high, and an input voltage (15 V) higher than the voltage (5 V) of the power supply Vcc can be monitored.

According to the semiconductor integrated circuit of the embodiment (6), by setting the values of the polysilicon resistor R12, the polysilicon resistor R13, the resistor R14 and the resistor R15 to desired values, a wide range can be obtained. A positive input voltage can be monitored.

The polysilicon resistors R12 and R13
Unlike conventional external resistors, they can be formed simultaneously in the process of forming a semiconductor integrated circuit, so that they are easy to manufacture and do not require external time and effort. Therefore, in terms of the entire electronic control device, the number of parts and the number of manufacturing steps are reduced, and the cost can be reduced.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a semiconductor integrated circuit according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing a semiconductor integrated circuit according to a second embodiment of the present invention.

FIG. 3 is a circuit diagram showing a semiconductor integrated circuit according to a third embodiment of the present invention.

FIG. 4 is a circuit diagram showing a semiconductor integrated circuit according to an embodiment (4) of the present invention.

FIG. 5 is a circuit diagram showing a semiconductor integrated circuit according to an embodiment (5) of the present invention.

FIG. 6 is a graph showing an output voltage from a comparator for explaining the operation of the semiconductor integrated circuit shown in FIG.

FIG. 7 is a circuit diagram showing a semiconductor integrated circuit according to Embodiment (6) of the present invention.

FIG. 8 is a graph showing an output voltage from a comparator for explaining the operation of the semiconductor integrated circuit shown in FIG. 7;

FIG. 9 is a circuit diagram showing a conventional semiconductor integrated circuit.

[Explanation of symbols]

 BAT Battery power supply 11 Bonding pad 13 Diode 14 Diode 15 Comparator R2 Polysilicon resistor R3 Polysilicon resistor j1 Connection point j2 Connection point Vout Output terminal

Claims (6)

[Claims] A plurality of polysilicon resistors or thin film resistors are interposed in series between a bonding pad and a ground, and the dividing points of these resistors are divided into an internal circuit and one or more electrostatic protection diodes. A semiconductor integrated circuit characterized by being connected to a connection point of: 2. A plurality of polysilicon resistors or thin film resistors are interposed in series between a bonding pad and a positive voltage source, and the dividing points of these resistors are divided into an internal circuit and one or more electrostatic protection diodes. A semiconductor integrated circuit, which is connected to a connection point with the node. 3. A polysilicon resistor or a thin film resistor is interposed between a bonding pad and one or more electrostatic protection diodes, and a surge is provided between the electrostatic protection diode and an internal circuit. A semiconductor integrated circuit, comprising a clamp circuit for absorption. 4. A surge absorbing clamp circuit is interposed between a connection point of said electrostatic protection diode and said internal circuit. Semiconductor integrated circuit. 5. A bonding pad and an electrostatic protection diode.
One gain setting resistor made of polysilicon or a thin film is interposed between the static protection diode and another internal gain setting resistor made of polysilicon or a thin film. The inverting input terminal of the inverting operational amplifier is connected to the connection point between the electrostatic protection diode and the other gain setting resistor, the non-inverting input terminal is grounded, and the output terminal is connected to the internal circuit and the other gain setting. A semiconductor integrated circuit connected to a connection point with a resistor. 6. A bonding pad and an electrostatic protection diode.
One gain setting resistor made of polysilicon or a thin film is interposed between the static protection diode and another internal gain setting resistor made of polysilicon or a thin film. An inverting input terminal of the inverting operational amplifier is connected to a connection point between the electrostatic protection diode and the other gain setting resistor, a non-inverting input terminal is connected to a positive reference voltage source, and an output terminal is connected to the internal circuit. And a connection point between the gain setting resistor and the other gain setting resistor.