JP2000021925A - Wire bonding method/equipment - Google Patents

Wire bonding method/equipment

Info

Publication number
JP2000021925A
JP2000021925A JP18776298A JP18776298A JP2000021925A JP 2000021925 A JP2000021925 A JP 2000021925A JP 18776298 A JP18776298 A JP 18776298A JP 18776298 A JP18776298 A JP 18776298A JP 2000021925 A JP2000021925 A JP 2000021925A
Authority
JP
Japan
Prior art keywords
wire
wire bonding
information
attribute
data table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18776298A
Other languages
Japanese (ja)
Other versions
JP3189792B2 (en
Inventor
Takeshi Kida
剛 木田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
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Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18776298A priority Critical patent/JP3189792B2/en
Publication of JP2000021925A publication Critical patent/JP2000021925A/en
Application granted granted Critical
Publication of JP3189792B2 publication Critical patent/JP3189792B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve TAT and the production number of products by outputting respective pieces of wire wiring information and wire attributes which are previously set to a wire bonding device, and only setting a condition in accordance with the attribute and executing wire bonding corresponding to the setting on a wire bonding device-side. SOLUTION: A first data table where wiring information is made to correspond to attribute information and a second data table where a device parameter is separately made to correspond to attribute information are generated against respective wires on CAD 1. Information of the first data table and the second data table are outputted to a wire bonding device 2. Wiring information and attributes, which represent the bonding positions of the respective wires are held. An outer input device 3 gives information of a corresponding parameter device to the wire bonding device 2 for the respective attributes. The wire bonding device 2 combines information, refers to the device parameter and executes bonding corresponding to wiring information and the attributes for the respective wires.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、生産性を向上させ
たワイヤーボンディング方法及びこの方法に対応するこ
とのできるワイヤーボンディング設備に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method with improved productivity and a wire bonding facility which can correspond to the method.

【０００２】[0002]

【従来の技術】従来のワイヤーボンディング工程におい
ては、作業者が直接ワイヤーボンディング位置の座標入
力をする工数を削減するため、ＣＡＤを用いて配線情報
を作成して、ワイヤーボンディング装置にこの情報を出
力するようになっている。まず、表１に示すように、Ｃ
ＡＤ１１上で半導体素子とリードフレーム等をワイヤー
でボンディングする際の配線情報を作成し、ワイヤーボ
ンディング装置１２に対し、これを出力する。ワイヤー
ボンディング装置１２では、表２に示すように、各ワイ
ヤーごとに直接データ入力を行うことにより装置パラメ
ータの設定を行う。2. Description of the Related Art In a conventional wire bonding process, in order to reduce the number of steps for an operator to directly input coordinates of a wire bonding position, wiring information is created by using CAD, and this information is output to a wire bonding apparatus. It is supposed to. First, as shown in Table 1, C
On the AD 11, wiring information for bonding a semiconductor element to a lead frame or the like with a wire is created and output to the wire bonding apparatus 12. In the wire bonding apparatus 12, as shown in Table 2, the apparatus parameters are set by directly inputting data for each wire.

【０００３】[0003]

【表１】 [Table 1]

【０００４】[0004]

【表２】 [Table 2]

【０００５】[0005]

【発明が解決しようとする課題】しかし、この従来技術
には、次のような問題点があった。第１の問題点は、各
ワイヤーごとに条件設定が必要な場合は、その設定に大
幅な時間がかかるということである。工数が増大するば
かりではなく、工程内に滞留する時間も長くなるため、
ＴＡＴ（turn around time）や生産数に大きな影響を及
ぼすことになる。更に配線が複雑なものになればなるほ
ど、これらの影響は顕著なものになる。従来、ワイヤー
ボンディング装置１２上で、装置パラメータを範囲設定
することにより変更することは可能であったが、これ
は、連続したワイヤーの中に境界を設定し、境界のワイ
ヤーにおいて装置パラメータを変更するというものであ
った。そのため、境界の数が膨大になった場合は使用に
耐え得るものではない。例えば、ワイヤーの種類が不連
続である場合は、各ワイヤーごとに範囲指定を行う必要
があり、これはワイヤーごとに設定を行うのと同じこと
となってしまう。However, this prior art has the following problems. The first problem is that if conditions need to be set for each wire, the setting takes a long time. Not only does the man-hour increase, but the time spent in the process also increases,
This will have a significant effect on TAT (turn around time) and production volume. These effects become more pronounced as the wiring becomes more complex. Conventionally, it was possible to change the device parameters by setting the range on the wire bonding device 12, but this is done by setting a boundary in a continuous wire and changing the device parameter in the boundary wire. It was that. Therefore, if the number of boundaries becomes enormous, it cannot be used. For example, if the types of wires are discontinuous, it is necessary to specify a range for each wire, which is the same as setting for each wire.

【０００６】第２の問題点は、データ入力間違い等の作
業ミスを防止することが難しいということにある。その
ため、ワイヤーボンディング工程における歩留まりの低
下が生じ、品質の維持が難しくなっている。その理由
は、各ワイヤーごとに、それぞれ装置パラメータを設定
する必要があるため、ワイヤーボンディングを行うワイ
ヤーの数が増え、複雑な配線になるほど作業ミスの発生
の可能性が高くなるためである。上記の点に鑑み本発明
は、ＴＡＴや生産数を向上させるとともに、作業ミスを
抑制し、歩留まりの向上や品質の維持を行うことのでき
るワイヤーボンディング方法及びワイヤーボンディング
設備を提供することを目的とする。[0006] The second problem is that it is difficult to prevent a work error such as a data input error. For this reason, the yield in the wire bonding process is reduced, and it is difficult to maintain the quality. The reason is that, since it is necessary to set the device parameters for each wire, the number of wires to be wire-bonded increases, and the more complicated the wiring, the higher the possibility of an operation error. In view of the above, it is an object of the present invention to provide a wire bonding method and a wire bonding facility capable of improving a TAT and a production number, suppressing a work error, and improving a yield and maintaining quality. I do.

【０００７】[0007]

【課題を解決するための手段】本発明によるワイヤーボ
ンディング方法は、半導体素子とリードフレームをワイ
ヤーを用いてボンディングする際の配線情報を作成する
ＣＡＤ上において、あらかじめワイヤー毎に属性を設定
し、各ワイヤーの配線情報と共に各ワイヤーの属性に関
する情報をワイヤーボンディング装置に出力し、ワイヤ
ーボンディング装置側ではその属性に対応した条件設定
のみを行うことで、配線毎に属性に対応したワイヤーボ
ンディングを行うものである。According to the wire bonding method of the present invention, an attribute is set in advance for each wire on a CAD for creating wiring information when a semiconductor element and a lead frame are bonded by using a wire. Information about the attribute of each wire is output to the wire bonding device together with the wiring information of the wire, and the wire bonding device performs wire bonding corresponding to the attribute for each wire by setting only the conditions corresponding to the attribute. is there.

【０００８】すなわち、本発明に係るワイヤーボンディ
ング方法は、半導体素子の電極とリードとをワイヤーを
用いて電気的に接続するワイヤーボンディング方法にお
いて、ＣＡＤ上で各ワイヤーに対して配線情報と属性情
報とを対応させた第１データ表を作成し、前記属性情報
に対して装置パラメータを別途対応させた第２データ表
を作成し、これら２つのデータ表をワイヤーボンディン
グ装置上で組み合わせて得られたデータ表を基にワイヤ
ーボンディング装置を制御することを特徴とする。That is, a wire bonding method according to the present invention is a wire bonding method for electrically connecting an electrode of a semiconductor element and a lead using a wire. A first data table in which device parameters are separately associated with the attribute information, and data obtained by combining these two data tables on a wire bonding apparatus. The wire bonding apparatus is controlled based on the table.

【０００９】この第２データ表の作成は、外部入力装置
を用いて行うことが好ましい。また、ＣＡＤからワイヤ
ーボンディング装置への第１データ表の転送は、ネット
ワークまたは記録媒体を通じて行うことが好ましい。本
発明に係るワイヤーボンディング設備は、少なくともＣ
ＡＤとワイヤーボンディング装置を含み、上記のワイヤ
ーボンディング方法に好適に用いることができる。尚、
本明細書中において「属性」とは、ボンディングに用い
るワイヤーの高さ、形状等、ボンディングワイヤーの性
状を示すものである。Preferably, the second data table is created using an external input device. Further, the transfer of the first data table from the CAD to the wire bonding apparatus is preferably performed through a network or a recording medium. The wire bonding equipment according to the present invention has at least C
It includes an AD and a wire bonding apparatus, and can be suitably used in the above wire bonding method. still,
In the present specification, the “attribute” indicates a property of the bonding wire such as a height and a shape of the wire used for bonding.

【００１０】[0010]

【発明の実施の形態】以下、図面により本発明について
詳細に説明するが、本発明はこれらの実施形態例のみに
限定されるものではない。図１は、第１の実施形態のワ
イヤーボンディング設備を示すブロック図であり、図中
実線の矢印は情報の流れ、破線の矢印は製品の流れを示
している。図１を参照すると、ＣＡＤ１は半導体素子上
の電極と金属製のリードフレームやＰＢＧＡ（Plastic
Ball Grid Array）等のプラスチック製の基板、セラミ
ックパッケージ、或いはＴＡＢ（Tape Automated Bondi
ng）テープ等の各リードをボンディングするワイヤーの
配線情報と、各ワイヤーに対する属性の情報を有してお
り、ボンディングされる各ワイヤーに対し属性を持つこ
とができるように設計されているワイヤーボンディング
装置２に対してそれら情報の出力を行う。次に、ワイヤ
ーボンディング装置２には、外部入力装置３により、各
属性に対するワイヤーボンディング装置２固有の装置パ
ラメータの入力が行われる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings, but the present invention is not limited to only these embodiments. FIG. 1 is a block diagram showing the wire bonding equipment according to the first embodiment. In the figure, solid arrows indicate the flow of information, and broken arrows indicate the flow of products. Referring to FIG. 1, the CAD 1 is composed of electrodes on a semiconductor element and a metal lead frame or a PBGA (Plastic).
Plastic substrate such as Ball Grid Array, ceramic package, or TAB (Tape Automated Bondi)
ng) A wire bonding apparatus that has wiring information of wires for bonding each lead such as a tape and information of attributes of each wire, and is designed to have an attribute for each wire to be bonded. 2 to output the information. Next, device parameters unique to the wire bonding device 2 for each attribute are input to the wire bonding device 2 by the external input device 3.

【００１１】ＣＡＤ１とワイヤーボンディング装置２の
接続の方法には、ネットワークを通じオンライン化され
たものと、フロッピーディスク等の記録媒体によるもの
が考えられる。ネットワークによりＣＡＤ１の保有する
情報をワイヤーボンディング装置２に出力する方式であ
れば、更なる工数削減による省力化が期待できる。As a method of connecting the CAD 1 and the wire bonding apparatus 2, a method of online connection through a network and a method of using a recording medium such as a floppy disk can be considered. If the information held by the CAD 1 is output to the wire bonding apparatus 2 via a network, labor saving can be expected by further reducing the number of steps.

【００１２】この外部入力装置３の形態としては、ネッ
トワークあるいはフロッピーディスク等の記録媒体を用
いて行うことが考えられるが、ワイヤーボンディング装
置２に手入力により属性に対する装置パラメータを直接
入力する方式も可能である。もちろん、各ワイヤーの属
性と属性に対する装置パラメータの入力はＣＡＤ１を用
いて同時に行うことも可能であるが、通常装置パラメー
タはワイヤーボンディング装置２の機種に依存し、機種
毎に異なるため、各種のワイヤーボンディング装置に柔
軟に対応するために、外部入力装置３を別途用意する。As a form of the external input device 3, it is conceivable to use a recording medium such as a network or a floppy disk. However, it is also possible to directly input device parameters for attributes into the wire bonding device 2 by manual input. It is. Of course, the attribute of each wire and the input of the device parameter for the attribute can be performed simultaneously using CAD1, but usually the device parameter depends on the model of the wire bonding device 2 and differs from model to model. An external input device 3 is separately prepared to flexibly support a bonding device.

【００１３】また、本実施例ではＣＡＤ１からの入力に
引き続き、外部入力装置３から属性と装置パラメータの
情報がワイヤーボンディング装置２に与えられている
が、あらかじめ外部入力装置３の情報がワイヤーボンデ
ィング装置２に与えられ、その後ＣＡＤ１からの情報を
出力するという形態でも差し支えない。具体的には、前
回使用した装置パラメータがワイヤーボンディング装置
２内に残存している場合で、同一装置パラメータを引き
続き使用する場合が考えられる。In this embodiment, information on the attributes and device parameters is given to the wire bonding apparatus 2 from the external input device 3 following the input from the CAD 1. 2 and then output the information from CAD1. Specifically, it is conceivable that the device parameters used last time remain in the wire bonding apparatus 2 and the same device parameters are continuously used.

【００１４】次に、ＣＡＤ１上で作成及び管理される情
報と、実際にワイヤーボンディングが行われる対象であ
る半導体装置との関係、そしてワイヤーボンディング装
置２で保有される情報と、外部入力装置３がワイヤーボ
ンディング装置２に与える情報について詳細に説明す
る。図２は半導体素子４とリードフレームとの間のワイ
ヤーの配線の具体例を示す上面図であり、表３はＣＡＤ
１で管理される情報、表４は外部入力装置３で扱われる
情報、表５はワイヤーボンディング装置２で扱われる情
報の詳細である。Next, the relation between the information created and managed on the CAD 1 and the semiconductor device to be actually subjected to wire bonding, the information held by the wire bonding apparatus 2 and the external input apparatus 3 Information given to the wire bonding apparatus 2 will be described in detail. FIG. 2 is a top view showing a specific example of the wiring of wires between the semiconductor element 4 and the lead frame, and Table 3 is a CAD.
1, Table 4 shows details of information handled by the external input device 3, and Table 5 shows details of information handled by the wire bonding device 2.

【００１５】[0015]

【表３】 [Table 3]

【００１６】[0016]

【表４】 [Table 4]

【００１７】[0017]

【表５】 [Table 5]

【００１８】図２に示すように、半導体素子４上の電極
５ａ〜５ｆと、リードフレームの各リード及びアイラン
ド７上のボンディング位置６ａ〜６ｆとがワイヤー８ａ
〜８ｆによりボンディングされる。このときワイヤー８
ａ〜８ｆがボンディングされる位置に関する情報は、半
導体素子４上の電極の位置５ａ〜５ｆとリードフレーム
上のボンディング位置６ａ〜６ｆを用いて、ＣＡＤ１上
で表３のように扱われる。各ワイヤーは、アイランド７
と接続するワイヤー８ｄ、長いリードと接続するワイヤ
ー８ａ、８ｃ、８ｆ、そして短いと接続するワイヤー８
ｂ、８ｅの３種類に分類され、それぞれの分類に対して
属性の設定がなされる。As shown in FIG. 2, the electrodes 5a to 5f on the semiconductor element 4 and the bonding positions 6a to 6f on each lead of the lead frame and the island 7 are connected to wires 8a.
To 8f. At this time, wire 8
Information on the positions where a to 8f are bonded is handled as shown in Table 3 on the CAD 1 using the electrode positions 5a to 5f on the semiconductor element 4 and the bonding positions 6a to 6f on the lead frame. Each wire is an island 7
Wire 8d connecting to the long lead, wires 8a, 8c and 8f connecting to the long lead, and wire 8 connecting to the short lead
Classification is made into three types, b and 8e, and attributes are set for each classification.

【００１９】ここで、ＣＡＤ１で作成された情報はネッ
トワーク等を用いてワイヤーボンディング装置２に出力
され、ワイヤーボンディング装置２では各ワイヤーのボ
ンディング位置を表す配線情報、並びに各ワイヤーに対
する属性を保有する。その後、外部入力装置３により、
表４に示すような各属性毎に対応する装置パラメータの
情報がワイヤーボンディング装置２に与えられる。その
結果、ワイヤーボンディング装置２は、表３と表４を組
み合わせることで、表５に示される情報を有し、各ワイ
ヤーに対する属性と属性に対する装置パラメータを参照
することで、配線情報と各ワイヤー毎の属性に応じたボ
ンディングを行う。また、装置パラメータを修正すると
きは各ワイヤーに対してではなく、各属性に対する装置
パラメータの修正を行えばよく、その結果はその属性を
持つ全ワイヤーに反映される。Here, the information created by the CAD 1 is output to the wire bonding apparatus 2 using a network or the like, and the wire bonding apparatus 2 holds wiring information indicating a bonding position of each wire and an attribute for each wire. Then, by the external input device 3,
Information on the device parameters corresponding to each attribute as shown in Table 4 is given to the wire bonding device 2. As a result, the wire bonding apparatus 2 has the information shown in Table 5 by combining Tables 3 and 4, and refers to the attribute for each wire and the device parameter for the attribute, so that the wiring information and the wire Bonding is performed according to the attribute. When modifying the device parameters, it is sufficient to modify the device parameters for each attribute, not for each wire, and the result is reflected on all wires having the attribute.

【００２０】次に、第１の実施の形態のワイヤーボンデ
ィング設備の動作について説明する。通常、ＱＦＰ（Qu
ad Flat Package）等においては、半導体素子上のアル
ミ等で形成される電極と、４２合金やＣｕ合金等からな
るリードフレームとの配線は、半導体素子内の回路と使
用されるリードフレームの形状の情報をもとに、ＣＡＤ
１上で作成される。ワイヤーのボンディング位置の情報
は任意の位置、例えば半導体素子の中心点を原点とし
て、原点からのＸ方向、Ｙ方向の距離で表され、一般的
にはμｍ単位で示される。すなわち１つのワイヤーのボ
ンディング位置は半導体素子上の電極のＸＹ座標とリー
ドフレーム側のボンディング位置を示すＸＹ座標により
２次元的に定められる。Next, the operation of the wire bonding equipment according to the first embodiment will be described. Usually, QFP (Qu
In the case of an ad flat package, etc., the wiring between the electrode formed of aluminum or the like on the semiconductor element and the lead frame made of 42 alloy, Cu alloy, or the like is formed in the shape of the circuit in the semiconductor element and the lead frame used. CAD based on information
1 is created on. Information on the bonding position of the wire is represented by an arbitrary position, for example, the origin in the center point of the semiconductor element, and the distance from the origin in the X and Y directions, and is generally expressed in μm. That is, the bonding position of one wire is two-dimensionally determined by the XY coordinates of the electrode on the semiconductor element and the XY coordinates indicating the bonding position on the lead frame side.

【００２１】ボンディングを行うワイヤーには直径が３
０μｍ程度の金線が使用されるのが一般的である。図２
に示すように、電極５ｄとアイランド７上のワイヤーボ
ンディング位置６ｄ、電極５ａ、５ｃ、５ｆと長いリー
ド上のワイヤーボンディング位置６ａ、６ｃ、６ｆ、そ
して電極５ｂ、５ｅと短いリード上のワイヤーボンディ
ング位置６ｂ、６ｅをワイヤーボンディングする３種類
のワイヤー、すなわちワイヤー８ｄ、ワイヤー８ｂ、８
ｅ、そしてワイヤー８ａ、８ｃ、８ｆで示される長さの
異なる３種類の配線で構成されるときに、全てのワイヤ
ーが同一のワイヤーの高さでボンディングがなされた場
合、その後に実施される樹脂封入工程においてワイヤー
の長さに応じたワイヤーの変形が起きるため、隣接の長
さの違うワイヤー同士で接触による電気的な短絡が起こ
りやすくなる。The wire to be bonded has a diameter of 3
Generally, a gold wire of about 0 μm is used. FIG.
As shown in the figure, the electrode 5d and the wire bonding position 6d on the island 7, the electrodes 5a, 5c and 5f and the wire bonding positions 6a, 6c and 6f on the long lead, and the electrodes 5b and 5e and the wire bonding position on the short lead. Three types of wires for wire bonding 6b and 6e, that is, wire 8d, wires 8b and 8
e, and three kinds of wires having different lengths represented by wires 8a, 8c, and 8f, and when all the wires are bonded at the same wire height, a resin to be performed thereafter is used. Since the wire is deformed in accordance with the length of the wire in the encapsulation step, electrical short-circuiting due to contact between adjacent wires having different lengths is likely to occur.

【００２２】なお、ワイヤーの長さについては、ＱＦＰ
の場合は一般的に電極−アイランド間が０．４〜２ｍｍ
程度、電極−長いリード間が３〜４ｍｍ程度、電極−短
いリード間が４．５〜８ｍｍ程度であることが多い。そ
のため、隣接ワイヤー間の短絡防止を目的として、それ
ぞれのワイヤーボンディング位置の違いにより長さの異
なるワイヤーの高さを変えてワイヤーボンディングを行
っている。The length of the wire is QFP
Is generally 0.4 to 2 mm between the electrode and the island.
In many cases, the distance between the electrode and the long lead is about 3 to 4 mm, and the distance between the electrode and the short lead is about 4.5 to 8 mm. Therefore, for the purpose of preventing a short circuit between adjacent wires, wire bonding is performed by changing the height of wires having different lengths depending on the difference in each wire bonding position.

【００２３】図２の場合においては、ＣＡＤ１上でのワ
イヤーの高さに対する属性を３種類、つまり属性１を低
ワイヤー、属性２を中ワイヤー、属性３を高ワイヤーと
し、具体的にはワイヤー８ｄを属性１、ワイヤー８ａ、
８ｃ、８ｆを属性２、ワイヤー８ｂ、８ｅを属性３とい
うように分類する。この各ワイヤーに対する属性付け
は、リードフレーム側のワイヤーのボンディング位置を
判別することで容易にＣＡＤ１上で実現できる。各ワイ
ヤーのボンディング位置を示す配線情報、並びに各ワイ
ヤーの高さについての属性情報は、作成終了後、１つの
ファイル或いは複数のファイルとしてＣＡＤ１上で扱わ
れ、ワイヤーボンディング実施前にワイヤーボンディン
グ装置２にネットワークを通じて転送される。In the case of FIG. 2, there are three types of attributes for the wire height on the CAD 1, namely, attribute 1 is a low wire, attribute 2 is a middle wire, attribute 3 is a high wire, and specifically, a wire 8d To attribute 1, wire 8a,
8c and 8f are classified as attribute 2, and wires 8b and 8e are classified as attribute 3. The attribute assignment for each wire can be easily realized on the CAD 1 by determining the bonding position of the wire on the lead frame side. The wiring information indicating the bonding position of each wire and the attribute information about the height of each wire are handled as one file or a plurality of files on the CAD 1 after the completion of the creation, and are sent to the wire bonding apparatus 2 before the wire bonding is performed. Transferred over the network.

【００２４】次に、各属性に対するワイヤーの高さにつ
いての具体的な数値の決定を行う。図３は、図２におけ
る電極５ｄとアイランド７上のワイヤーボンディング位
置６ｄ、電極５ａ、５ｃ、５ｆと長いリード上のワイヤ
ーボンディング位置６ａ、６ｃ、６ｆ、電極５ｂ、５ｅ
と短いリード上のワイヤーボンディング位置６ｂ、６ｅ
をワイヤーボンディングする際のワイヤーについての半
導体素子４表面からワイヤーの最高点までの理想的な高
さを示しており、それぞれ２００μｍ、２５０μｍ、４
５０μｍであることが経験的に分かっている。Next, a specific numerical value for the wire height for each attribute is determined. FIG. 3 shows the electrode 5d and the wire bonding position 6d on the island 7 in FIG. 2, the electrodes 5a, 5c and 5f and the wire bonding positions 6a, 6c and 6f on the long lead, and the electrodes 5b and 5e.
And wire bonding positions 6b and 6e on short leads
Shows the ideal height from the surface of the semiconductor element 4 to the highest point of the wire when the wire is wire-bonded, and 200 μm, 250 μm, and 4 μm, respectively.
It has been empirically found to be 50 μm.

【００２５】一方、ワイヤーボンディング装置２の装置
パラメータとしては、現在ではほとんどの機種において
ループ高さと呼ばれる装置パラメータが用意されてお
り、このループ高さに目的のワイヤーの高さの数値を設
定することで、その設定値に応じたワイヤーの高さでワ
イヤーボンディングを行うことができる。そこで、本実
施例では属性１を２００、属性２を２５０、属性３を４
５０とし、ＣＡＤ１上で表現される１〜３の属性とワイ
ヤーボンディング装置２での装置パラメータを対応させ
たものをファイルとして作成し、外部入力装置３として
フロッピーディスクを介してワイヤーボンディング装置
２に入力する。もちろん前述したように、ここで作成し
たファイルに含まれる情報は基本的に各属性と装置パラ
メータの対応関係を表した簡単なものであることから、
ファイルを用いずにワイヤーボンディング装置２に各属
性に対する装置パラメータを直接入力しても良い。On the other hand, as a device parameter of the wire bonding device 2, a device parameter called a loop height is prepared in most models at present, and a numerical value of a target wire height is set in the loop height. Thus, wire bonding can be performed at a wire height corresponding to the set value. Therefore, in this embodiment, attribute 1 is 200, attribute 2 is 250, and attribute 3 is 4
50, a file in which the attributes 1 to 3 represented on the CAD 1 are associated with the device parameters of the wire bonding device 2 is created as a file, and input to the wire bonding device 2 via a floppy disk as the external input device 3 I do. Of course, as described above, the information included in the file created here is basically a simple one that shows the correspondence between each attribute and device parameter.
Device parameters for each attribute may be directly input to the wire bonding device 2 without using a file.

【００２６】以上前述した２つの手段により、ワイヤー
ボンディング装置２には配線情報、各ワイヤー毎の属
性、そして属性に対応した装置パラメータが入力され、
表６に示すような情報を保有することになる。その後、
ワイヤーボンディング装置２では各ワイヤーを属性に応
じたワイヤーの高さでワイヤーボンディングを行い、ボ
ンディング位置により２００μｍ、２５０μｍ、４５０
μｍの高さのワイヤーが形成される。By the two means described above, the wire information, the attribute of each wire, and the device parameters corresponding to the attribute are input to the wire bonding apparatus 2.
The information shown in Table 6 is retained. afterwards,
In the wire bonding apparatus 2, each wire is wire-bonded at a wire height according to the attribute, and 200 μm, 250 μm, 450
A wire having a height of μm is formed.

【００２７】[0027]

【表６】 [Table 6]

【００２８】なお、本実施例では属性の設定をワイヤー
の高さのみについて行っているが、ワイヤーの形状やそ
の他の条件についても属性を設定することが可能であ
り、それらを組み合わせて使用することももちろん可能
である。また、半導体装置も本実施例で述べているＱＦ
Ｐに限ったものではなく、配線がより複雑であるＰＢＧ
Ａやセラミックスケースを用いた製品等を製造する際に
も各ワイヤーに対して属性を設定するという同様の手法
を用いることが可能である。In this embodiment, the attribute is set only for the height of the wire. However, it is possible to set the attribute for the shape of the wire and other conditions. Of course, it is possible. Further, the semiconductor device is also a QF described in this embodiment.
PBG is not limited to P but has more complicated wiring
A similar method of setting an attribute for each wire can be used when manufacturing a product using A or a ceramic case.

【００２９】第１の実施の形態のワイヤーボンディング
設備においては、以下のような効果を奏することができ
る。第１の効果は、条件最適化及び製品切替に要する時
間が短縮されるということである。そのため、生産にお
ける工数削減とＴＡＴ短縮が可能となる。その理由は、
ＣＡＤ１上でワイヤー毎にワイヤーのボンディング位置
とワイヤーの属性を自動的に設定し、ワイヤーボンディ
ング装置２では属性毎の条件設定のみ行えばよく、初期
の装置パラメータの設定やその修正を迅速に行うことが
できるためである。In the wire bonding equipment according to the first embodiment, the following effects can be obtained. The first effect is that the time required for condition optimization and product switching is reduced. Therefore, it is possible to reduce man-hours and TAT in production. The reason is,
The wire bonding position and the wire attribute are automatically set for each wire on the CAD 1, and only the condition setting for each attribute need be performed in the wire bonding device 2, and the initial device parameters can be quickly set and corrected. This is because

【００３０】第２の効果は、装置パラメータ入力時にお
ける作業ミスを大幅に低減できるということである。そ
のため高い良品率と品質を維持することが可能となる。
その理由は、従来作業者が各ワイヤー毎に装置パラメー
タの設定を行っていたのに対し、本発明ではＣＡＤ１上
で既に各ワイヤーの属性が設定され、作業者は属性に対
する装置パラメータの設定のみをすればよく、設定すべ
きパラメータの数が大幅に削減されるためである。The second effect is that a work error at the time of inputting device parameters can be greatly reduced. Therefore, it is possible to maintain a high yield rate and high quality.
The reason for this is that while the worker has conventionally set the device parameters for each wire, in the present invention, the attributes of each wire are already set on the CAD 1, and the worker only needs to set the device parameters for the attributes. This is because the number of parameters to be set is greatly reduced.

【００３１】次に、第２の実施形態例について、図面を
参照して詳細に説明する。図４を参照すると、ＣＡＤ１
で作成される配線情報と各ワイヤー毎の属性の情報の出
力先として、また、外部入力装置３で作成される属性と
装置パラメータの対応を示す情報の出力先として、ワイ
ヤーボンディング装置Ａ９とワイヤーボンディング装置
Ｂ１０の２台が設けられている。これら２台のワイヤー
ボンディング装置は、ＣＡＤ１と外部入力装置３から出
力される同一の情報を保有する。Next, a second embodiment will be described in detail with reference to the drawings. Referring to FIG.
The wire bonding apparatus A9 and the wire bonding apparatus A9 are used as output destinations of wiring information and attribute information for each wire, and output destinations of information indicating the correspondence between attributes and apparatus parameters generated by the external input device 3. Two devices B10 are provided. These two wire bonding apparatuses hold the same information output from the CAD 1 and the external input device 3.

【００３２】このとき、例えば各ワイヤーの属性が１と
２の２種類であったとすると、ワイヤーボンディング装
置Ａ９において属性１のワイヤーのボンディングを行
い、ワイヤーボンディング装置Ｂ１０において属性２の
ワイヤーのボンディングを行うというように、１つの半
導体素子に対し、同一の情報を用いて複数回のワイヤー
ボンディングを行うことが可能となる。この実施形態例
においては、例えばワイヤーの線径あるいは材質、さら
にワイヤーボンディング装置で用いられるキャピラリー
の資材などをワイヤーボンディング装置Ａ９とワイヤー
ボンディング装置Ｂ１０とで変更してワイヤーボンディ
ングすることも可能である。この第２の実施形態例にお
いては、装置パラメータで示されるワイヤーボンディン
グ条件だけではなく、ワイヤーの種類などの資材を変え
るために複数のワイヤーボンディング装置を用いる際に
も、共通の情報を使用できるという新たな効果を有す
る。At this time, assuming that the attributes of each wire are two types, 1 and 2, for example, the bonding of the attribute 1 wire is performed by the wire bonding apparatus A9, and the bonding of the attribute 2 wire is performed by the wire bonding apparatus B10. Thus, it is possible to perform wire bonding a plurality of times for one semiconductor element using the same information. In this embodiment, for example, the wire diameter or the material of the wire and the material of the capillary used in the wire bonding apparatus can be changed by the wire bonding apparatus A9 and the wire bonding apparatus B10 to perform the wire bonding. In the second embodiment, not only the wire bonding conditions indicated by the device parameters but also common information can be used when using a plurality of wire bonding devices to change materials such as wire types. Has a new effect.

【００３３】更に第３の実施形態例として、図１におい
てＣＡＤ１で作成される１つないしは複数のファイル内
に複数の製品の情報を統合しておき、製品毎に属性に対
応させておくことで、ワイヤーボンディングを行う際に
ワイヤーボンディングを行うワイヤーを属性を利用して
指定するだけで、同一の情報を使用して複数の製品のワ
イヤーボンディングを行うことが可能となる。この第３
の実施形態例においては、半導体素子とリードフレーム
の種類が同一である時に、半導体素子上やリードフレー
ム上のワイヤーボンディング装置２が用いる認識点の再
設定無しにワイヤーボンディングが可能になるため、品
種切替にかかる工数が更に削減されるという効果、さら
に製品毎の情報を１つにまとめることで、情報管理の簡
素化を図れるという効果を有する。なお、本発明の技術
範囲は上記実施の形態に限定されるものではなく、本発
明の趣旨を逸脱しない範囲において種々の変更を加える
ことが可能である。Further, as a third embodiment, information of a plurality of products is integrated in one or a plurality of files created by CAD1 in FIG. 1 and attributes are associated with each product. Thus, it is possible to perform wire bonding of a plurality of products using the same information simply by specifying the wire to be wire-bonded using the attribute when performing wire bonding. This third
In the embodiment of the present invention, when the type of the semiconductor element and the lead frame are the same, the wire bonding can be performed without resetting the recognition point used by the wire bonding apparatus 2 on the semiconductor element or the lead frame. This has the effect of further reducing the number of steps required for switching, and the effect of simplifying information management by combining information for each product into one. Note that the technical scope of the present invention is not limited to the above embodiment, and various changes can be made without departing from the spirit of the present invention.

【００３４】[0034]

【発明の効果】以上詳細に説明した通り、本発明のワイ
ヤーボンディング方法を用いることで、条件最適化及び
製品切替に要する時間を短縮することができる。そのた
め、生産における工数削減とＴＡＴ短縮が可能となる。
また、装置パラメータ入力時における作業ミスを大幅に
低減することができる。そのため高い良品率と品質を維
持することが可能となる。As described in detail above, by using the wire bonding method of the present invention, the time required for optimizing conditions and switching products can be reduced. Therefore, it is possible to reduce man-hours and TAT in production.
In addition, it is possible to greatly reduce operation errors when inputting device parameters. Therefore, it is possible to maintain a high yield rate and high quality.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 第１の実施形態のワイヤーボンディング設備
を示すブロック図である。FIG. 1 is a block diagram illustrating a wire bonding facility according to a first embodiment.

【図２】 半導体素子４とリードフレームとの間のワイ
ヤーの配線の具体例を示す上面図である。FIG. 2 is a top view showing a specific example of wiring of wires between a semiconductor element 4 and a lead frame.

【図３】 図２における電極とワイヤーボンディング位
置の距離の差による半導体素子４表面からワイヤーの最
高点までの理想的な高さの違いを示す概略図である。3 is a schematic diagram showing a difference in an ideal height from the surface of the semiconductor element 4 to the highest point of a wire due to a difference in a distance between an electrode and a wire bonding position in FIG. 2;

【図４】 第２の実施形態のワイヤーボンディング設備
を示すブロック図である。FIG. 4 is a block diagram illustrating a wire bonding facility according to a second embodiment.

【符号の説明】[Explanation of symbols]

１ ＣＡＤ ２ ボンディング装置 ３ 外部入力装置 ４ 半導体素子 ５ 電極 ６ ワイヤーボンディング位置 ７ アイランド ８ ワイヤー ９ ボンディング装置Ａ １０ ボンディング装置Ｂ DESCRIPTION OF SYMBOLS 1 CAD 2 Bonding device 3 External input device 4 Semiconductor element 5 Electrode 6 Wire bonding position 7 Island 8 Wire 9 Bonding device A 10 Bonding device B

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 半導体素子の電極とリードとをワイヤー
を用いて電気的に接続するワイヤーボンディング方法に
おいて、 ＣＡＤ上で各ワイヤーに対して配線情報と属性情報とを
対応させた第１データ表を作成し、前記属性情報に対し
て装置パラメータを別途対応させた第２データ表を作成
し、これら２つのデータ表をワイヤーボンディング装置
上で組み合わせて得られたデータ表を基にワイヤーボン
ディング装置を制御することを特徴とするワイヤーボン
ディング方法。1. A wire bonding method for electrically connecting an electrode of a semiconductor element and a lead using a wire, wherein a first data table in which wiring information and attribute information correspond to each wire on a CAD is provided. A second data table in which device parameters are separately associated with the attribute information is prepared, and the wire bonding device is controlled based on a data table obtained by combining these two data tables on the wire bonding device. A wire bonding method. 【請求項２】 前記第２データ表の作成を、外部入力装
置を用いて行うことを特徴とする請求項１記載のワイヤ
ーボンディング方法。2. The wire bonding method according to claim 1, wherein the creation of the second data table is performed using an external input device. 【請求項３】 前記ＣＡＤから前記ワイヤーボンディン
グ装置への第１データ表の転送を、ネットワークまたは
記録媒体を通じて行うことを特徴とする請求項１または
２に記載のワイヤーボンディング方法。3. The wire bonding method according to claim 1, wherein the transfer of the first data table from the CAD to the wire bonding apparatus is performed through a network or a recording medium. 【請求項４】 少なくともＣＡＤとワイヤーボンディン
グ装置を含み、請求項１ないし３のいずれか一項に記載
のワイヤーボンディング方法に用いることを特徴とする
ワイヤーボンディング設備。4. A wire bonding facility comprising at least a CAD and a wire bonding apparatus, and used for the wire bonding method according to claim 1.
JP18776298A 1998-07-02 1998-07-02 Wire bonding method and wire bonding equipment Expired - Fee Related JP3189792B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18776298A JP3189792B2 (en) 1998-07-02 1998-07-02 Wire bonding method and wire bonding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18776298A JP3189792B2 (en) 1998-07-02 1998-07-02 Wire bonding method and wire bonding equipment

Publications (2)

Publication Number Publication Date
JP2000021925A true JP2000021925A (en) 2000-01-21
JP3189792B2 JP3189792B2 (en) 2001-07-16

Family

ID=16211769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18776298A Expired - Fee Related JP3189792B2 (en) 1998-07-02 1998-07-02 Wire bonding method and wire bonding equipment

Country Status (1)

Country Link
JP (1) JP3189792B2 (en)

Also Published As

Publication number Publication date
JP3189792B2 (en) 2001-07-16

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