JP2000021759A - Exposure method and apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform multiple exposures in a comparatively short time by aligning only a second mask and by aligning a wafer using alignment information obtained in the first exposure when a second exposure is performed. SOLUTION: A wafer and an L and S pattern reticle (first mask) are aligned (c) and the cyclic pattern of the L and S pattern reticle is exposed to light to be projected on the wafer (first exposure). A reticle having a given pattern (second mask) is placed on a reticle stage and is aligned and is exposed to light to be projected on the wafer (second exposure). Here, the wafer is not aligned and is step-moved using wafer alignment information obtained in the first exposure and stored in a memory means. Then, the resist is developed (e) and etched away (f). In this manner, a desired pattern is formed by the multiple exposures of the first and second exposures.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposing method and an exposing apparatus, and more particularly, to exposing a photosensitive substrate with a fine circuit pattern, for example, a semiconductor chip such as an IC or LSI, a display element such as a liquid crystal panel, a magnetic head, and the like. It is suitable for use in the manufacture of various devices such as a detection device and an imaging device such as a CCD.

[0002]

2. Description of the Related Art Conventionally, when devices such as ICs, LSIs, and liquid crystal panels are manufactured using photolithography technology, circuits formed on the surface of a photomask or reticle (hereinafter, referred to as "mask"). A projection exposure method and projection in which a pattern is projected onto a photosensitive substrate such as a silicon wafer or a glass plate (hereinafter, referred to as a “wafer”) coated with a photoresist or the like by a projection optical system, and transferred (exposed) there. An exposure apparatus is used.

In recent years, in response to the higher integration of the above devices, there has been a demand for miniaturization of a pattern to be transferred to a wafer, that is, higher resolution and larger area of one chip on the wafer. Therefore, even in the above-described projection exposure method and projection exposure apparatus that form the center of microfabrication technology for wafers,
In order to form an image (circuit pattern image) having a dimension (line width) of 0.5 / μm or less over a wide range, improvement in resolution and enlargement of an exposure area have been attempted.

FIG. 25 shows a schematic view of a conventional projection exposure apparatus. In FIG. 25, reference numeral 191 denotes an excimer laser as a light source for exposure to far ultraviolet rays, 192 denotes an illumination optical system, 193 denotes illumination light emitted from the illumination optical system 192, 194 denotes a mask,
Reference numeral 95 denotes an optical system (projection optical system) 19 which exits from the mask 194.
Reference numeral 196 denotes an object-side exposure light, reference numeral 196 denotes a reduction type projection optical system, reference numeral 197 denotes an image-side exposure light which exits from the projection optical system 196 and enters a substrate 198, reference numeral 198 denotes a wafer which is a photosensitive substrate,
Reference numeral 99 denotes a substrate stage for holding a photosensitive substrate.

[0005] The laser light emitted from the excimer laser 191 is guided to the illumination optical system 192 by the routing optical systems (190a, 190b), and the illumination optical system 192 provides a predetermined light intensity distribution, light distribution, and opening angle (Sekiguchi). The mask 19 is adjusted so as to have the illumination light 193 having several NA) or the like.
Light 4 On the mask 194, a pattern having a size obtained by reciprocally multiplying (for example, 2 times, 4 times, or 5 times) the fine pattern formed on the wafer 198 by a projection magnification of the projection optical system 196 is formed on a quartz substrate by chrome or the like. And illumination light 1
93 is transmitted and diffracted by the fine pattern of the mask 194, and becomes the object side exposure light 195. The projection optical system 196 includes:
The object-side exposure light 195 is converted into image-side exposure light 197 that forms a fine pattern of the mask 194 on the wafer 198 at the above-described projection magnification and with sufficiently small aberration. Image side exposure light 19
Numeral 7 converges on the wafer 198 at a predetermined numerical aperture NA (= Sin (θ)) as shown in the enlarged view at the bottom of FIG. 25, and forms an image of a fine pattern on the wafer 198. The substrate stage 199 has a plurality of different areas (shot areas: areas to be one or more chips) of the wafer 198.
When sequentially forming a fine pattern, the wafer 19 is moved stepwise along the image plane of the projection optical system.
8 with respect to the projection optical system 196.

A projection exposure apparatus using the above-described excimer laser as a light source has a high projection resolution, but it is technically difficult to form a pattern image of, for example, 0.15 μm or less.

[0007] The projection optical system 196 has a resolution limit due to a trade-off between the optical resolution due to (exposure) wavelength and the depth of focus. The resolution R of the resolution pattern and the depth of focus DOF by the projection exposure apparatus are expressed by the following Rayleigh formulas (1) and (2).

R = k ₁ = (λ / NA) ‥‥‥ (1) DOF = k ₂ = (λ / NA ² ) ‥‥‥ (2) where λ is the exposure wavelength, and NA is the projection optical system 196. Are the image side numerical apertures, k ₁ and k _{2, which} are constants determined by the development process characteristics of the wafer 198.
The value is about 5 to 0.7. From the equations (1) and (2), it is apparent that the numerical aperture N
There is "higher NA" to increase A. However, in actual exposure, the depth of focus DOF of the projection optical system 196 needs to be set to a certain value or more, so that it is difficult to increase the NA to a certain value or more. It is understood that "short wavelength" for reducing the wavelength λ is required.

However, as the exposure wavelength becomes shorter, a serious problem arises. It is the projection optical system 196
Is that the glass material of the lens that constitutes is lost. The transmittance of most glass materials is close to 0 in the deep ultraviolet region,
Using a special manufacturing method for exposure equipment (exposure wavelength about 248
nm), fused quartz exists as a glass material.
The transmittance of the fused quartz also sharply decreases for an exposure wavelength of 193 nm or less. It is very difficult to develop a practical glass material in a region having an exposure wavelength of 150 nm or less corresponding to a fine pattern having a line width of 0.15 μm or less. In addition, the glass material used in the deep ultraviolet region must satisfy various conditions such as durability, uniformity of refractive index, optical distortion, workability, etc. in addition to transmittance. Existence is at stake.

As described above, in the conventional projection exposure method and projection exposure apparatus, it is necessary to reduce the exposure wavelength to about 150 nm or less in order to form a pattern having a line width of 0.15 μm or less on a wafer. On the other hand, at present, there is no practical glass material in this wavelength region, so that a pattern having a line width of 0.15 μm or less cannot be formed on the wafer.

US Pat. No. 5,415,835 discloses a technique for forming a fine pattern by two-beam interference exposure. According to the two-beam interference exposure, a pattern having a line width of 0.15 μm or less is formed on a wafer. be able to.

The principle of two-beam interference exposure will be described with reference to FIG. In the two-beam interference exposure, a laser beam L151 having coherence from a laser 151 and being a parallel beam is converted into laser beams L151a and L151 by a half mirror 152.
The two laser light beams (coherent parallel light beams) are divided from larger than 0 to 9 by being split into two light beams of ab and reflecting the split two light beams by the plane mirrors 153a and 153b, respectively.
An interference fringe is formed at the intersection by intersecting at an angle of less than 0 degree on the surface of the wafer 154. By exposing and exposing the wafer 154 with (the light intensity distribution of) the interference fringes, a fine periodic pattern corresponding to the light intensity distribution of the interference fringes is formed on the wafer 154.

The two light beams L151a and L151b are
In the case where the wafer intersects with the perpendiculars formed on the 54 surfaces in a state inclined at the same angle in the opposite directions to each other on the wafer surface, the resolution R in the two-beam interference exposure is expressed by the following equation (3).

R = λ / (4 sin θ) = λ / 4NA = 0.25 (λ / NA) (3) where R is the width of each L & S (line and space), ie, interference fringes. The width of each of the light and dark portions is shown. Β represents the incident angle (absolute value) of the two light beams with respect to each image plane, and NA = Sin θ.

Comparing equation (1), which is the equation for resolution in normal projection exposure, and equation (3), which is the equation for resolution in two-beam interference exposure, the resolution R of two-beam interference exposure is expressed by equation (1). Since this corresponds to the case where k ₁ = 0.25, it is possible to obtain a resolution twice or more as high as that of a normal projection exposure in which k ₁ = 0.5 to 0.7 in two-beam interference exposure. .

Although not disclosed in the above US patent, for example, when λ = 0.248 nm (KrF excimer) and NA =
At 0.6, R = 0.10 μm is obtained.

[0017]

In the two-beam interference exposure, basically, only a simple fringe pattern corresponding to the light intensity of the interference fringes (exposure amount distribution) can be obtained. Difficult to form.

In the above-mentioned US Pat. No. 5,415,835, a simple fringe pattern (periodic pattern), that is, a binary exposure amount distribution is given to a wafer (resist) by two-beam interference exposure, and then the resolution of the exposure apparatus is increased. Obtaining an isolated line (pattern) by performing normal lithography (exposure) using a mask in which an opening having a size within the range is formed and giving another binary exposure distribution to the wafer Has been proposed.

However, US Pat.
In the multiple exposure method disclosed in Japanese Patent Publication No. 35, after a wafer is placed in an exposure apparatus for two-beam interference exposure and exposed, the wafer is placed back in another exposure apparatus for normal exposure and exposure is performed.
There was a problem that it took time.

An object of the present invention is to provide an exposure method and an exposure apparatus capable of performing multiple exposures in a relatively short time.

[0021]

The exposure method of the present invention comprises the following steps: (1-1) The mask and the photosensitive substrate are positioned relative to each other, and the same region on the photosensitive substrate is subjected to multiple exposures with different patterns. In the exposure method, the first exposure of the first mask on the photosensitive substrate is performed after both the first mask and the photosensitive substrate are aligned, and the second exposure of the second mask on the photosensitive substrate is performed. In the exposure, the mask is aligned instead, and the photosensitive substrate is aligned using the alignment information obtained in the first exposure.

In particular, (1-1-1) a periodic pattern is formed on the first mask, and a normal pattern such as a circuit pattern is formed on the second mask.

The exposure apparatus of the present invention is characterized in that (2-1) the pattern on the mask is transferred to a photosensitive substrate using the exposure method of the constitution (1-1).

The method of manufacturing a device according to the present invention comprises the following steps: (3-1) After exposing a pattern on a mask surface to a wafer surface using the exposure method of the constitution (1-1), the wafer is subjected to a developing process. The device is manufactured via

(3-2) After the pattern on the mask surface is exposed on the wafer surface by using the exposure apparatus of the constitution (2-1), the wafer is subjected to a developing process to manufacture a device. It is characterized by.

In the present invention, "multiple exposure" means "exposing the same area on a photosensitive substrate with different light patterns without passing through a developing process".

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view showing a high-resolution exposure apparatus which can perform both two-beam interference exposure (first exposure) and ordinary projection exposure (second exposure) according to the present invention.

In FIG. 1, 221 denotes KrF or ArF
An excimer laser 222, an illumination optical system 222, a mask (reticle) 223, a mask stage 224, a projection optical system 227 for reducing and projecting a circuit pattern of the mask 223 onto the wafer 228, and 225 a mask (reticle) changer. The stage 224 is provided to selectively supply a normal reticle and one of the above-described Levenson phase shift mask (reticle), edge shifter type mask (reticle), or periodic pattern mask (reticle) having no phase shifter. It is.

The mask stage has a function of rotating the mask based on information previously drawn on a bar code or the like in order to make the direction of the fine pattern parallel to the direction of the periodic pattern. .

In FIG. 1, reference numeral 229 denotes one XYZ stage shared by the two-beam interference exposure and the projection exposure. This stage 229 is movable on a plane perpendicular to the optical axis of the optical system 227 and in the direction of the optical axis. The position in the XY directions is accurately controlled using a laser interferometer or the like.

The apparatus shown in FIG. 1 includes a reticle positioning optical system 231 and a wafer positioning optical system 235.

In FIG. 1, reference numeral 231 denotes a reticle alignment detecting system, and 232 denotes a reticle alignment, which is provided in a part of the reticle 223. A reticle reference mark 233 is provided on a part of the main body. Reference numeral 234 denotes a wafer alignment, which is provided on a part of the wafer 228. 235 is a wafer alignment detection system. The alignment of the reticle 223 is performed by detecting the reticle alignment mark 232 and the reticle reference mark 233.

For alignment of the wafer 228, the wafer alignment mark 234 is
5 by detecting.

A known method (for example, Japanese Patent Application Laid-Open Nos. 8-274018 and 8-264429) can be applied to the alignment between the mask and the wafer.

In this embodiment, the first exposure of the first mask on the photosensitive substrate is performed after the alignment of both the first mask and the photosensitive substrate, and the second exposure of the second mask on the photosensitive substrate is performed on the second mask. And the alignment of the photosensitive substrate is performed using the alignment information obtained at the time of the first exposure, and both alignments are performed for exposure.

FIG. 2 is an explanatory diagram of the first mask 223a having a periodic pattern. 223a is the first mask 223
3A is a reticle alignment mark provided in FIG.

FIG. 3 is an explanatory diagram of the second mask 223b having a normal pattern such as a gate pattern. Reference numeral 232b is a reticle alignment mark provided on the second mask 223b.

FIG. 4 is an explanatory diagram showing an exposure sequence of this embodiment. FIG. 5 is a flowchart of the exposure sequence according to the present embodiment. In FIG. 4, step (a) shows the wafer obtained in the previous step.

In step (b), a resist is applied on the wafer surface. After aligning the wafer with the L & S pattern reticle (first mask) in step (c), the L & S
The periodic pattern of the S pattern reticle is projected and exposed on the wafer (first exposure).

In step (d), an arbitrary pattern reticle (second mask) is placed on a reticle stage, reticle alignment is performed, and projection exposure (second exposure) is performed. At this time, no wafer alignment is performed, and the wafer is step-driven using the wafer alignment information obtained in the first exposure and stored in the storage means. In step (e), development processing is performed. In step (f), the etching resist is removed, and thus a predetermined pattern image is formed by multiple exposure of the first and second exposures.

The illumination optical system 222 of the exposure apparatus shown in FIG. 1 is configured to be able to switch between partially coherent illumination and coherent illumination. In the case of coherent illumination, the above-described (1a) or (1a) shown in the block 230 is used. The illumination light of (1b) is supplied to one of the above-described Levenson-type phase shift reticles or edge shifter-type reticles or one of the periodic pattern reticles having no phase shifter, and is illustrated in a block 230 in the case of partial coherent illumination. (2
The illumination light of a) is supplied to a desired reticle. Switching from partial coherent illumination to coherent illumination can be achieved by replacing the aperture stop usually placed immediately after the fly-eye lens of the optical system 222 with a coherent illumination stop having an aperture diameter sufficiently smaller than this aperture stop. .

The exposure method and exposure apparatus of the present invention
When the second exposure is a projection exposure, the exposure wavelength of the first exposure and the second exposure in the double exposure is 400 nm or less, and preferably 250 nm or less. 250n
In order to obtain light having an exposure wavelength of less than m, a KJrF excimer laser (about 248 nm) or an ArF excimer laser (about 193 nm) is used.
nm).

In the present invention, "projection exposure" refers to exposure in which three or more parallel light beams from an arbitrary pattern formed on a mask are incident on an image plane at various angles different from each other. Things.

The exposure apparatus of the present invention has a projection optical system for projecting a mask pattern onto a wafer, and a mask illumination optical system capable of performing both partial coherent illumination and coherent illumination. By performing normal exposure and performing two-beam interference exposure by coherent illumination, it is characterized by periodic pattern exposure.
“Partial coherent illumination” is illumination in which the value of σ = (numerical aperture of the illumination optical system / numerical aperture of the projection optical system) is greater than zero and less than 1, and “coherent illumination” means that the value of σ is zero. Or a value close thereto, which is considerably smaller than σ of the partially coherent illumination.

In coherent illumination in periodic pattern exposure, σ is set to 0.3 or less. Partial coherent illumination during normal exposure makes σ 0.6 or more. σ = 0.8 is desirable. Furthermore, it is still more effective to use annular illumination in which the illuminance distribution is lower on the inside than on the outside.

The exposure wavelength of this exposure apparatus is 400 nm or less, preferably 250 nm or less. 250n
In order to obtain light having an exposure wavelength of less than m, a KrF excimer laser (about 248 nm) or an ArF excimer laser (about 193 n) is used.
m).

In the embodiment of the present invention, an optical system capable of switching between partially coherent illumination and coherent illumination is disclosed as a mask illumination optical system.

The exposure apparatus of the present invention has a two-beam interference exposure apparatus and a moving stage for holding a substrate to be exposed (photosensitive substrate) which is commonly used by both apparatuses.

The exposure wavelength of this exposure apparatus is also 400 nm or less, preferably 250 nm or less. 250n
In order to obtain light having an exposure wavelength of less than m, a KrF excimer laser (about 248 nm) or an ArF excimer laser (about 193 n) is used.
m).

Using the above-described exposure method and exposure apparatus, various devices such as semiconductor chips such as ICs and LSIs, display elements such as liquid crystal panels, detection elements such as magnetic heads, and image pickup elements such as CCDs can be manufactured. .

The present invention is not limited to the embodiments described above, but can be variously modified without departing from the gist of the present invention. In particular, the number of exposures and the number of exposure steps in each step of the two-beam interference exposure and the normal exposure can be appropriately selected, and the exposure can be appropriately adjusted such that the exposure is superimposed and shifted. By performing such an adjustment, variations in circuit patterns that can be formed increase.

FIGS. 6 to 14 are explanatory views of the exposure method according to the first embodiment of the present invention. FIG. 6 is a flowchart showing the exposure method of the present invention. FIG. 6 shows each block of the periodic pattern exposure step (first exposure), the projection exposure step (normal pattern exposure step, the second exposure), and the development step, which constitute the exposure method of the present invention, and the flow thereof. In the figure, the order of the periodic pattern exposure step and the projection exposure step may be reversed, and when one of the steps includes a plurality of exposure steps, each step may be performed alternately.

The exposure method and the exposure apparatus of the present invention are characterized in that a double exposure of a periodic pattern exposure (first exposure) and a normal exposure (second exposure) is performed on a substrate to be exposed (photosensitive substrate). I have.

Here, the normal pattern exposure is an exposure in which the resolution is lower than that of the periodic pattern exposure, but the exposure can be performed in an arbitrary pattern.

The pattern (normal pattern) exposed by the normal pattern exposure includes a fine pattern having a resolution equal to or less than the resolution, and the periodic pattern exposure forms a periodic pattern having substantially the same line width as the fine pattern. A large pattern having a resolution equal to or larger than the resolution of the normal pattern exposure is not limited to the line width of the periodic pattern exposure, but an integer multiple is effective.

Normally, the pattern exposure has an arbitrary shape and may be oriented in various directions. Generally, an IC pattern has two directions, one direction and the direction perpendicular to the other.
In many cases, it is oriented in a direction, and the finest pattern is often limited to only one specific direction.

When periodic pattern exposure is performed by double exposure, it is important to match the direction of the periodic pattern with the direction of the finest pattern of the normal pattern.

The exposure is performed such that the center of the peak of the periodic pattern coincides with the center of a fine pattern having a resolution lower than that of the normal pattern.

The double exposure in the present invention means a double exposure of a periodic pattern exposure and a normal pattern exposure. The periodic pattern exposure is repeated several times in parallel with the direction of the finest pattern of the normal pattern exposure. Exposure.

Each of the periodic pattern exposure and the normal pattern exposure of the exposure method and exposure apparatus of the present invention comprises one or a plurality of exposure steps. Different exposure dose distributions are given to the photosensitive substrate.

When exposure is performed according to the flow of FIG.
First, the wafer (photosensitive substrate) is exposed in a periodic pattern as shown in FIG. The numbers in FIG. 7 represent the exposure amount, and the hatched portions in FIG. 7A indicate the exposure amount 1 (actually arbitrary) and the white portions indicate the exposure amount 0.

When developing only such a periodic pattern after exposure, usually, the exposure threshold value E of the resist on the photosensitive substrate is used.
th is set between the exposure amounts 0 and 1 as shown in the lower graph of FIG. The upper part of FIG. 7B shows a finally obtained lithography pattern (concavo-convex pattern).

FIG. 8 shows the dependence of the film thickness after development on the amount of exposure and the exposure threshold value of the resist on the photosensitive substrate in this case, as a positive resist (hereinafter referred to as "positive") and a negative resist. Each of the resists (hereinafter referred to as “negative type”) is shown. In the case of the positive type, when the exposure threshold value Eth or more, and in the case of the negative type, the exposure threshold value Eth or less,
The film thickness after development becomes zero.

FIG. 9 is a schematic diagram showing a state in which a lithography pattern is formed through development and etching processes in the case of performing such exposure, for a negative type and a positive type.

In the present embodiment, unlike the normal exposure sensitivity setting, as shown in FIG. 10 (same as FIG. 7A) and FIG.
, The exposure threshold Eth of the resist on the exposed substrate
Is set to be larger than 1. When the exposure pattern (exposure amount distribution) obtained by performing only the base pattern exposure shown in FIG. 2 is developed on the photosensitive substrate, the exposure amount becomes insufficient. Does not occur, and no lithography pattern is formed by etching. This can be regarded as the disappearance of the periodic pattern. (Here, the present invention will be described using an example in which a negative type is used, but the present invention can also be implemented in the case of a positive type.) In FIG. 11, the upper part shows a lithography pattern (what The lower graph shows the relationship between the exposure distribution and the exposure threshold. Incidentally, E ₁ according to bottom the exposure amount in the periodic pattern exposure, E ₂ represents an exposure amount in the conventional projection exposure.

The feature of this embodiment is that a high-resolution exposure pattern, which is apparently lost only by periodic pattern exposure, is fused with an exposure pattern of an arbitrary shape including a pattern having a size equal to or smaller than the resolution of an exposure apparatus by ordinary projection exposure. And selectively exposing only the desired area to the exposure threshold or more of the resist,
Finally, a desired lithography pattern can be formed.

FIG. 12A shows an exposure pattern obtained by normal projection exposure (normal pattern exposure). Since the pattern is a fine pattern, it cannot be resolved and the intensity distribution on the object to be exposed is blurred and spread. . In the present embodiment, a fine pattern having a paper width of about half the resolution of normal projection exposure is used.

Assuming that the projection exposure for forming the exposure pattern of FIG. 12A is performed over the same region of the same resist without the development step after the periodic pattern exposure of FIG.
FIG. 12B shows the total exposure distribution on the resist surface.
It looks like the graph below. Here, the ratio of the exposure amount E ₂ of the exposure amount E ₁ and the projection exposure of the periodic pattern exposure is 1:
1. The exposure threshold value Eth of the resist is equal to the exposure amount E ₁ (=
1) The sum of the exposure amount E ₁ and the exposure amount E ₂ of the projection exposure (= 2)
Therefore, the lithography pattern shown in the upper part of FIG. 12B is formed.

At this time, the center of the normal pattern is matched with the peak of the periodic pattern. Also, the direction of the normal pattern and the direction of the periodic pattern are matched.

The isolated line pattern shown in the upper part of FIG. 12B has a resolution of a periodic pattern exposure and has no simple periodic pattern. Therefore, a high-resolution pattern higher than the resolution that can be realized by ordinary projection exposure is obtained.

Here, it is assumed that the projection exposure for forming the exposure pattern shown in FIG. 13 (the line width twice as large as that of the exposure pattern in FIG. 10 and the exposure threshold or more (here, the exposure amount twice as large as the threshold)). ) Is overlaid on the same region of the same resist without the development step after the periodic pattern exposure of FIG. At this time, the symmetry of the superposed pattern is good by making the center of the normal pattern coincide with the peak position of the periodic pattern exposure,
A good pattern image is obtained.

The total exposure distribution of this resist is shown in FIG.
As shown in (B), the exposure pattern of the two-beam interference exposure (periodic pattern exposure) disappears, and finally only the lithography pattern by the projection exposure is formed.

As shown in FIG. 14, the principle is the same when the exposure is performed with a line width three times the exposure pattern of FIG.
With an exposure pattern having a line width of four times or more, the line width of a finally obtained lithography pattern is obvious from a combination of an exposure pattern having a double line width and an exposure pattern having a triple line width. All the lithography patterns that can be realized by projection exposure can also be formed in the present embodiment.

By adjusting the exposure amount distribution (absolute value and distribution) and the resist threshold value of the photosensitive substrate by each of the periodic pattern exposure and the projection exposure briefly described above,
11, 12 (B), 13 (B), and 14
The minimum line width is formed by a combination of various patterns as shown in FIG.
A circuit pattern serving as the pattern (B) can be formed.

The principles of the above exposure method can be summarized as follows: (A-1) A pattern area not subjected to projection exposure (normal pattern exposure), that is, a periodic exposure pattern equal to or less than an exposure threshold of a resist disappears by development.

(A-2) Regarding the pattern area of the projection exposure performed with the exposure amount equal to or less than the exposure threshold value of the resist, the exposure pattern having the resolution of the periodic pattern exposure determined by the combination of the projection exposure and the periodic pattern exposure is used. It is formed.

(A-3) In the pattern area of the projection exposure performed with the exposure amount equal to or higher than the exposure threshold value, a fine pattern (corresponding to a mask) which is not resolved by the projection exposure alone is similarly formed. It turns out that. Further, as an advantage of the exposure method, if the periodic pattern exposure having the highest resolution is performed by two-beam interference exposure, a much larger depth of focus can be obtained as compared with normal exposure.

In the above description, the order of the periodic pattern exposure and the projection exposure is the order of the periodic pattern exposure, but is not limited to this order.

Next, a second embodiment of the present invention will be described.

The present embodiment is directed to a so-called gate type pattern shown in FIG. 15 as a circuit pattern (lithography pattern) obtained by exposure.

The gate pattern of FIG. 15 has a minimum line width of 0.1 μm in the horizontal direction, that is, the AA ′ direction in the figure, whereas it has a minimum line width of 0.2 μm or more in the vertical direction. According to the present invention, it is possible to obtain a high resolution only in such a one-dimensional direction.
For two-dimensional patterns, two-beam interference exposure (periodic pattern exposure) may be performed only in one-dimensional directions that require such high resolution.

In this embodiment, an example of a combination of two-beam interference exposure only in one-dimensional direction and ordinary projection exposure will be described with reference to FIG.

FIG. 16A shows a periodic exposure pattern by two-beam interference exposure only in one-dimensional direction. The period of this exposure pattern is 0.2 μm, and this exposure pattern corresponds to a line width of 0.1 μmL & S pattern. Numerical values in the lower part of FIG. 16 represent exposure amounts.

As an exposure apparatus for realizing such two-beam interference exposure, there is an apparatus in which a mask and an illumination method are configured as shown in FIG. 21 or 22 in a projection exposure apparatus as shown in FIG.

The exposure apparatus shown in FIG. 20 will be described. In the exposure apparatus of FIG. 20, as described above, each of the two multiplexed light beams obliquely enters the wafer 154 at an angle θ, and the line width of the interference fringe pattern (exposure pattern) that can be formed on the wafer 154 is expressed by the above equation (3). Is done. The relationship between the angle θ and the NA on the image plane side of the demultiplexing / multiplexing optical system is NA = sin θ. The angle θ can be arbitrarily adjusted and set by changing the angle of each of the pair of plane mirrors 153 (153a, 153b). If the value of the angle θ is set to be large with the pair of plane mirrors 153, the respective fringes of the interference fringe pattern can be adjusted. Has a smaller line width. For example, when the wavelength of the two light beams is 248 nm (KrF excimer), an interference fringe pattern having a line width of about 0.1 μm can be formed even at θ = 38 degrees. In this case, NA = sin θ = 0.62. If the angle θ is set to be larger than 38 degrees, it goes without saying that higher resolution can be obtained.

Next, the exposure apparatus shown in FIGS. 20 to 22 will be described. The exposure apparatus shown in FIG. 20 is, for example, a projection exposure apparatus using a normal step-and-repeat or step-and-scan type reduction projection optical system (consisting of a large number of lenses). .6 and more.

In FIG. 20, reference numeral 161 denotes a mask; 162, object-side exposure light which emerges from the mask 161 and enters an optical system 163; 163, a projection optical system; 164, an aperture stop; 165, a wafer which emerges from the projection optical system 163; Image-side exposure light 166 incident on the wafer 166 indicates a wafer serving as a photosensitive substrate.
FIG. 9 is an explanatory diagram showing the position of a light beam on the pupil plane corresponding to the circular opening of the stop 164 by a pair of black dots.

FIG. 20 is a schematic view showing a state in which the two-beam interference exposure is performed, and the object-side exposure light 162 and the image-side exposure light 16 are shown.
Both 5 are different from normal projection exposures and consist of only two parallel light beams.

In order to perform two-beam interference exposure (periodic pattern exposure) in a normal projection exposure apparatus as shown in FIG. 20, the mask 161 and its illumination method may be set as shown in FIG. 21 or FIG. Hereinafter, these three examples will be described.

FIG. 21A shows a Levenson-type phase shift mask 173, in which the light-shielding portion 17 made of chrome is used.
The pitch PO of 1 is 0 in the equation (4), and the pitch POS of the phase shifter 172 is the mask of the equation (5).

P ₀ = MP = 2MR = Mλ / (2NA) ‥‥‥ (4) P _OS = 2P ₀ = Mλ / (NA) ‥‥‥ (5) where M is the projection magnification of the projection optical system 163. , Λ indicates the exposure wavelength, and NA indicates the numerical aperture of the projection optical system 163 on the image side.

On the other hand, the mask 174 shown in FIG. 21B is a shifter-edge type phase shift mask made of chrome without a light-shielding portion, and is the same as the Levenson type.
The pitch POS of No. 5 is configured to satisfy the above equation (5).

In order to perform two-beam interference exposure using the phase shift masks shown in FIGS. 21A and 21B, these masks are subjected to so-called coherent illumination with σ = 0 (or a value close to 0). Specifically, as shown in FIG.
The mask 170 is irradiated with a parallel light beam from a direction perpendicular to the mask (a direction parallel to the optical axis).

Here, σ = numerical aperture of the illumination optical system / numerical aperture of the projection optical system.

When such illumination is performed, the phase shifter 172 (175) cancels out the 0th-order transmitted diffracted light that exits from the mask 170 in the vertical direction, because the phase difference between adjacent transmitted lights becomes π. The two parallel rays of ± 1st-order transmitted diffracted light are generated symmetrically from the mask 170 with respect to the optical axis of the projection optical system 163, and the two object-side exposures 165 shown in FIG. I do. Also 2
The higher-order diffracted light of higher order is transmitted through the aperture stop 1 of the projection optical system 163.
Since it does not enter the aperture 64, it does not contribute to imaging.

The mask 180 shown in FIG. 22 is a mask in which the pitch PO of the light shielding portion 181 made of chromium is expressed by the same expression (6) as the expression (4).

P ₀ = MP = 2MR = Mλ / (2NA) (6) where M is the projection magnification of the projection optical system 163, λ is the exposure wavelength, and NA is the image-side aperture of the projection optical system 163. Indicates a number.

The mask without the phase shifter shown in FIG. 22 is subjected to oblique incidence illumination using one or two parallel light beams. In this case, the incident angle θ of the parallel light beam to the mask 180
₀ is set to satisfy Expression (7). When two parallel light fluxes are used, the mask is illuminated with parallel light fluxes inclined by θ _{0 in} opposite directions with respect to the optical axis.

Sin θ ₀ = M / NA ‥‥‥ (7) Here, M is the projection magnification of the projection optical system 163, and NA is the image-side numerical aperture of the projection optical system 163.

When obliquely illuminating a mask having no phase shifter shown in FIG. 22 with a parallel light beam satisfying the above equation (7), the mask 180 outputs an angle θ with respect to the optical axis.
_0- order transmitted diffracted light that travels straight at 0, and travels along an optical path symmetrical with respect to the optical path of the 0-order transmitted diffracted light and the optical axis of the projection optical system (travels at an angle -θ ₀ with respect to the optical axis) —first-order transmission Two light beams of the diffracted light are generated as the two object-side exposure light beams 162 in FIG. 20, and these two light beams enter the opening of the aperture stop 164 of the projection optical system 163 to form an image.

In the present invention, such oblique incidence illumination using one or two parallel light beams is also treated as "coherent illumination".

The technique for performing two-beam interference exposure using a normal projection exposure apparatus has been described above. The illumination optical system of the normal projection exposure apparatus is configured to perform partial coherent illumination. By exchanging an aperture stop (not shown) corresponding to 0 <σ <1 with a special aperture stop corresponding to σ ≒ 0, the projection exposure apparatus can be configured to perform substantially coherent illumination. .

Returning to the description of the second embodiment shown in FIGS. In the present embodiment, FIG. 16B shows a normal projection exposure (normal pattern exposure) (for example, one in which partial coherent illumination is performed on a mask) subsequent to the two-beam interference exposure (periodic pattern exposure) described above. The gate pattern is exposed. The upper part of FIG. 16C shows the relative positional relationship with the exposure pattern by the two-beam interference exposure and the exposure amount in the area of the exposure pattern of the normal projection exposure, and the lower part of FIG. The exposure amount of the resist on the wafer is mapped vertically and horizontally with a resolution of a pitch of a minimum line width.

The exposure dose distribution shown in the lower part of FIG. 16 shows the intensity distribution of the light exposed on the wafer with the light intensity incident from the mask as 1.

Although the exposure amount distribution by the exposure of the periodic pattern shown in FIG. 16A should ideally be a rectangular wave of 1 and 0, a line width near the resolution limit of the two-beam interference exposure is used. Therefore, it is a sine wave formed by only the zero-order light and the first-order light. Io the maximum value of the sin wave, a minimum value represented as I _1. At this time, the values of I ₀ and I ₁ are determined by σ of the illumination condition.

The exposure amount distribution by the normal projection exposure shown in FIG. 16B shows typical values in each part. The portion of the minimum line width of the exposure pattern by this projection exposure is blurred and widened without resolution, and the value of the light intensity at each store decreases. The exposure amount is roughly set to b at the center of the pattern, d at both sides, and c at the center where blurred images from both sides come. The line width twice as large as the minimum line width is larger than the values of b, c, and d. However, since the line width is near the resolution limit of the projection exposure, the value of a is slightly blurred.
These values of a, b, c, d change depending on the lighting conditions.

The exposure distribution shown in FIG. 16C is obtained as a result of adding the exposure amounts of the exposure pattern shown in FIG. 16A and the exposure pattern shown in FIG. 16B.

The light amount ratio in each of the two-beam interference exposure and the projection exposure differs depending on the illumination conditions of each exposure. The light amount ratio in each exposure in the addition is set as two-beam interference exposure: projection exposure = 1: k as the illuminance ratio of the illumination system, and the value of k is obtained as follows.

The exposure amount distribution shown in FIG. 16C can be expressed by the following equation using the above-mentioned exposure amount distribution and light amount ratio.

A ′ = k × a + I ₀ a ″ = k × a + I ₁ b ′ = k × b + I ₀ c ′ = k × c + I ₁ d ′ = k × d + I ₁ desired gate In order to obtain the pattern, a relational expression with the threshold value Ic of exposure of the resist is obtained, for example, when the resist is a negative type,

[0111] _{a '> I C a ">} I C b'> I C c '<I C d'<I C a ', a", b' is it is desirable difference is less, c 'and particularly b' It is desirable to have a difference with By solving these equations, the optimum light amount ratio under each illumination condition can be obtained. Particularly, the following two equations related to the fine pattern are important. When the resist is negative type, k × b + I ₀ > I _C k × c + I ₁ <I _C resist is positive type, k × b + I ₁ <I _C k × c + I ₀ > I _C resist is positive type. Although the magnitude relationship of the amount distribution is inverted and the inequality sign is inverted with respect to the resist threshold value Ic, the optimum light amount ratio is similarly obtained.

The manner in which the fine circuit pattern of FIG. 17 is formed by combining two different illumination methods of the two-beam interference exposure and the ordinary projection exposure described above will be described. In this embodiment, there is no developing process between the two-beam interference exposure and the normal projection exposure. Therefore, the exposure amount in the region where the exposure pattern of each exposure overlaps is added, and a new exposure pattern is generated by the added exposure amount (distribution).

FIG. 17, FIG. 18 and FIG. 19 show K at a wavelength of 248 nm.
This is a specific example using an rF excimer stepper.

As shown in FIG. 17, a gate pattern having a minimum line width of 0.12 μm is usually exposed, and a periodic pattern is overlapped with a Levenson-type phase shift mask so as to overlap the minimum line width.

The NA of the projection lens was 0.6, and the σ of the illumination system was 0.3 for exposure using a Levenson mask. At the time of normal mask exposure, σ = 0.3, 0.6, 0.8 and annular illumination.

When exposing a periodic pattern by two-beam interference such as a phase shift mask, coherent illumination is σ
Is zero or a value close to it, but if it is too small, the amount of exposure per unit time will be small and the time required for exposure will be long, which is not practical.

In the case of periodic pattern exposure, σ is desirably 0.3 or less, and in exposure using a Levenson mask, the maximum σ is set to 0.3.

In normal exposure, partial coherent illumination is generally used. However, when σ is increased, reproducibility of a complicated shape is improved and depth is increased. In so-called annular illumination in which the illuminance distribution is lower on the inside than on the outside, this tendency is remarkable, but there is a disadvantage that the contrast is reduced.

As shown in FIG. 18A, the σ of the normal exposure
Is set to 0.3 which is the same as σ of the periodic pattern exposure, and the double exposure is performed under the same illumination condition, the gate pattern is defocused to 0.
Although the resolution is within the range of ± 0.2 μm, the line pattern portion is undulating, and the narrow portion causes disconnection, which is not preferable.

In the case of normal pattern exposure, σ = 0.6
It is better to do above. As shown in FIG. 18B, when σ of the normal exposure is set to 0.6, the gate pattern is resolved within the range of defocus 0 ± 0.4 μm, and the undulation of the line pattern is eliminated. Set the exposure amount ratio between normal exposure and periodic pattern exposure to normal exposure: periodic pattern exposure =
1.5: 1.

As shown in FIG. 19A, the σ of the normal exposure
When is increased to 0.8, the reproducibility of a complicated shape is slightly improved. The exposure amount ratio between normal exposure and periodic pattern exposure was set to normal pattern exposure: periodic pattern exposure = 2: 1. In the case of normal pattern exposure, the exposure amount is preferably twice or more as compared with the periodical pattern exposure.

In FIG. 19 (B), the normal exposure is annular illumination, and the illuminance from 0.6 inside the ring to 0.8 outside the ring is 1, and
This is a two-dimensional intensity distribution in the case where the illuminance is set to 0 or less inside 0.6 of the ring. The exposure amount ratio between normal exposure and periodic pattern exposure was set to normal exposure: periodic pattern exposure = 2.5: 1.

In the annular illumination, the reproducibility of a complicated shape is improved and the depth is increased as compared with when σ is 0.8. A good image was obtained with a defocus of ± 0.4 μm or less.

The fine circuit pattern is formed by double exposure with periodic pattern exposure. Normally, the fine pattern of the exposure pattern is not normally resolved because the light intensity is low and the contrast is low. Become imaged.

On the other hand, even a large pattern having a resolution equal to or higher than the resolution of the normal exposure pattern is superimposed on the intensity of the periodic pattern exposure and the contrast is enhanced. According to the exposure method of the present invention, a circuit pattern having a fine line width of 0.12 μm can be formed by using a projection exposure apparatus having an illumination optical system capable of switching illumination conditions such as changing σ or a light amount ratio of illuminance. And

The optimum value of the light amount ratio between the periodic pattern exposure and the normal pattern exposure was determined by the above-mentioned formula based on the combination of the illumination conditions.

Illumination condition 1 The exposure of the periodic pattern is σ = 0.
3. Normal pattern exposure: σ = 0.3 Exposure amount distribution by periodic pattern exposure shown in the lower part of FIG. 16A and exposure amount distribution by normal projection exposure shown in the lower part of FIG. ) Are shown below.

I ₀ = 0.80 I ₁ = 0.23 a = 1.31 b = 0.34 c = 0.61 d = 0.09 k = 1.0 Optimum, a '= 2.11 a "= 1.54 b' = 1.21 c '= 0.89 d' = 0.32, and for the later comparison, the maximum value a 'is normalized by 1 as follows.

A '= 1.0 a "= 0.73 b' = 0.57 c '= 0.42
d '= 0.15 I ₀ = 0.38 Illumination condition 2 σ = 0.3 for periodic pattern exposure, σ = 0.6 I ₀ = 0.80 I ₁ = 0.23 a = 1.25 b = 0.44 c = 0.53 d = 0.13 k = 1.5 for normal pattern exposure Is optimal, and a '= 2.68 a "= 2.11 b' = 1.46 c '= 1.03 d' = 0.43. For later comparison, when the maximum value a 'is normalized by 1, the following is obtained. .

A '= 1.0 a "= 0.79 b' = 0.55 c '= 0.38
d '= 0.16 I ₀ = 0.30 Illumination condition 3 σ = 0.3 for periodic pattern exposure, σ = 0.8 for normal pattern exposure I ₀ = 0.80 I ₁ = 0.23 a = 1.20 b = 0.48 c = 0.47 d = 0.16 k = 2.0 is optimal, and a '= 3.20 a "= 2.63 b' = 1.76 c '= 1.17 d' = 0.55. Normalizing the maximum value a 'to 1 gives the following.

A '= 1.0 a "= 0.82 b' = 0.55 c '= 0.37
d '= 0.17 I ₀ = 0.25 Illumination condition 4 Periodic pattern exposure is σ = 0.3, normal pattern exposure is σ = 0.8, annular illumination, inner (inner zone) σ
Illuminance distribution of 0.6 or less was set to zero.

I ₀ = 0.80 I ₁ = 0.23 a = 1.10 b = 0.47 c = 0.36 d = 0.19 k = 2.5 It is optimal when a = 3.55 a "= 2.98 b '= 1.98 c' = 1.13 d ' = 0.71 and the maximum value a ′ is normalized by 1 as follows.

A '= 1.0 a "= 0.84 b' = 0.56 c '= 0.32
d '= 0.20 I ₀ = 0.23 In the discussion so far, the resist threshold value was 1.5 when the maximum exposure amount was 3, so if normalized with the maximum exposure amount, the resist threshold value would be 0.5. Looking at this normalized exposure distribution, a ', a ", b' are normalized resist threshold values of 0.
It is larger than 5 and c ', d', I ₀ is smaller than the threshold.

Since a portion where the exposure amount is larger than the resist threshold value is developed by development, only the exposure amounts a ′, a ″, and b ′ remain as a pattern after development, so that FIG.
The part shown in gray below is the shape after development.

In general, when exposing a normal exposure pattern, an exposure amount that is about twice as large as that for exposing a periodic pattern is appropriate.
There is an optimum exposure amount ratio depending on a combination of illumination conditions when exposing the periodic pattern, and it can be obtained by the above-described formula.

As a result of calculating various combinations of the illumination conditions from the above-described formula, the following was shown. When σ = 0.3 at the time of periodic pattern exposure and the illumination condition σ of the normal pattern exposure is smaller than 0.8, the exposure amount at the time of exposing the normal pattern is set to be twice or less than the exposure amount at the time of exposing the periodic pattern. Good.

In the case of a periodic pattern, when σ = 0.3 and the illumination condition for exposing the normal pattern is annular illumination, when the width of the annular zone is small, the exposure amount for exposing the normal pattern is equal to the periodic pattern. It is preferable that the exposure amount is twice or more than the exposure amount at the time of exposure.

Illumination condition σ when exposing periodic pattern
Is smaller than 0.3, the exposure amount for exposing the normal pattern should be at least twice the exposure amount for exposing the periodic pattern.

In the present invention, (a) as the illumination method of the illumination optical system, it is applicable to illuminate the mask pattern with light from a KrF excimer laser, an ArF excimer laser or an F2 excimer laser.

(B) Refraction system, reflection
It is applicable to project the mask pattern by a projection optical system composed of either a refraction system or a reflection system.

(C) As the exposure apparatus, a step-and-repeat type reduction projection exposure apparatus having the exposure method of the present invention as an exposure mode, a step-and-scan type reduction projection exposure apparatus having the exposure method of the present invention as an exposure mode, etc. are applied. It is possible.

Next, an embodiment of a method for manufacturing a semiconductor device using the above-described projection exposure apparatus will be described.

FIG. 23 shows a flow of manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD).

In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design.

In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4
The (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation check test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 24 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the above-described exposure apparatus to print and expose the circuit pattern of the mask onto the wafer.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to easily manufacture a highly integrated semiconductor device, which has been conventionally difficult to manufacture.

[0152]

As described above, the present invention has the following advantages. (A-1) In the second exposure, only the second mask is aligned and the wafer is aligned using the alignment information at the time of the first exposure. Multiple exposures can be performed with throughput.

[Brief description of the drawings]

FIG. 1 is a schematic view of a main part of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is an explanatory view of the mask of FIG. 1;

FIG. 3 is an explanatory view of the mask of FIG. 1;

FIG. 4 is an explanatory diagram of an exposure sequence according to the present embodiment.

FIG. 5 is a flowchart of an exposure sequence according to the embodiment.

FIG. 6 is a flowchart of an exposure method according to the present invention.

FIG. 7 is an explanatory view showing an exposure pattern by two-beam interference exposure.

FIG. 8 is an explanatory diagram showing exposure sensitivity characteristics of a resist.

FIG. 9 is an explanatory view showing pattern formation by development.

FIG. 10 is an explanatory view showing an exposure pattern by ordinary two-beam interference exposure.

FIG. 11 is an explanatory view showing an exposure pattern by two-beam interference exposure in the present invention.

FIG. 12 is an explanatory view showing an example of an exposure pattern (lithography pattern) that can be formed in the first embodiment of the present invention.

FIG. 13 is an explanatory view showing another example of an exposure pattern (lithography pattern) that can be formed in the first embodiment of the present invention.

FIG. 14 is an explanatory view showing another example of an exposure pattern (lithography pattern) that can be formed in the first embodiment of the present invention.

FIG. 15 is an explanatory diagram showing a gate pattern according to the second embodiment of the present invention.

FIG. 16 is an explanatory view showing Embodiment 2 of the present invention.

FIG. 17 illustrates a gate pattern.

FIG. 18 is an explanatory diagram of a formed gate pattern.

FIG. 19 is an explanatory diagram of a formed gate pattern.

FIG. 20 is a schematic view illustrating an example of a projection exposure apparatus that performs two-beam interference exposure.

FIG. 21 is an explanatory view showing one example of a mask and an illumination method used in the apparatus shown in FIG. 20;

FIG. 22 is an explanatory view showing another example of the mask and the illumination method used in the apparatus shown in FIG. 20;

FIG. 23 is a flowchart of a device manufacturing method of the present invention.

FIG. 24 is a flowchart of a device manufacturing method of the present invention.

FIG. 25 is a schematic view showing a conventional projection exposure apparatus.

FIG. 26 is a schematic view showing an example of a conventional two-beam interference exposure apparatus.

[Explanation of symbols]

 221 Excimer laser 222 Illumination optical system 223 Mask (reticle) 224 Mask (reticle) stage 225 2 Beam interference mask and mask for normal projection exposure 226 Mask (reticle) changer 227 Projection optical system 228 Wafer 229 XYZ stage

Claims (5)

[Claims] In an exposure method for performing relative exposure between a mask and a photosensitive substrate and performing multiple exposure on the same region on the photosensitive substrate with different patterns, a first mask is formed on the photosensitive substrate. The exposure is performed after both the first mask and the photosensitive substrate are aligned, and the second exposure of the second mask on the photosensitive substrate is performed by aligning the mask instead. An exposure method, wherein alignment is performed using alignment information obtained during the first exposure. 2. The method according to claim 1, wherein a periodic pattern is formed on the first mask, and a normal pattern such as a circuit pattern is formed on the second mask.
Exposure method. 3. An exposure apparatus, wherein a pattern on a mask is transferred onto a photosensitive substrate using the exposure method according to claim 1. 4. A device is manufactured by exposing a pattern on a mask surface onto a wafer surface using the exposure method according to claim 1 or 2, and then subjecting the wafer to a development process. Device manufacturing method. 5. A device according to claim 3, wherein after the pattern on the mask surface is exposed on the wafer surface using the exposure apparatus according to claim 3, the device is manufactured through a developing process of the wafer. Production method.