JP2000003986A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2000003986A JP2000003986A JP10186982A JP18698298A JP2000003986A JP 2000003986 A JP2000003986 A JP 2000003986A JP 10186982 A JP10186982 A JP 10186982A JP 18698298 A JP18698298 A JP 18698298A JP 2000003986 A JP2000003986 A JP 2000003986A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- resin
- die pad
- semiconductor device
- molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はパワーＩＣなどの放
熱板付半導体装置に関する。さらに詳しくは、放熱板を
樹脂により一体成形しながら放熱板の角に樹脂の未充填
やボイドの発生しにくい放熱板形状の半導体装置に関す
る。The present invention relates to a semiconductor device with a heat sink such as a power IC. More specifically, the present invention relates to a semiconductor device having a shape of a heat sink in which corners of the heat sink are hardly filled with resin and voids are hardly generated while integrally forming the heat sink with resin.
【０００２】[0002]
【従来の技術】近年、大電力を取り扱うパワーＩＣもハ
イブリッドからモノリシック化されてきており、モノリ
シックＩＣでもハイパワー化してきている。通常のモノ
リシックＩＣは、たとえば図３に断面説明図が示される
ように、半導体ペレット１がダイパッド２上にダイボン
ディングされ、リード３の端部とそれぞれ金線などのワ
イヤ４によりワイヤボンディングされ、その周囲がモー
ルド用樹脂からなる樹脂パッケージ５で被覆される構造
になっている。この樹脂パッケージ５は、通常トランス
ファモールド（射出成形）により形成され、半導体チッ
プ１がボンディングされたリードフレームの被覆部分を
金型のキャビティ内にセッティングして溶融樹脂を注入
（充填）し、固化することにより形成される。2. Description of the Related Art In recent years, power ICs for handling large electric power have been changed from hybrids to monolithic, and monolithic ICs have also been increased in power. In a normal monolithic IC, for example, a semiconductor pellet 1 is die-bonded on a die pad 2 as shown in a sectional view of FIG. The periphery is covered with a resin package 5 made of molding resin. The resin package 5 is usually formed by transfer molding (injection molding), and the covering portion of the lead frame to which the semiconductor chip 1 is bonded is set in the cavity of the mold, and the molten resin is injected (filled) and solidified. It is formed by this.
【０００３】この樹脂が固化したリードフレームを金型
から取り出すには、まず上金型を上げ、ついで突出ピン
（イジェクタピン）により固化した樹脂部分を押し出す
ことにより下金型から分離させてリードフレームを取り
出す。そのため、図３に金型の突出ピン７が一点鎖線で
示されるように、樹脂パッケージ５の底面に突出ピン７
が当たるように射出成形金型が形成されている。しか
も、この突出ピン７がキャビティの底面（樹脂パッケー
ジ５の底面）より下側に位置していると、樹脂充填の際
に突出ピン７側に樹脂が流れ込み樹脂パッケージ５の底
面に突起部ができ、半導体装置の取扱時や実装時に不都
合が生じる。そのため、図３に示されるように、突出ピ
ン７がキャビティ（樹脂パッケージ５）内に出っ張るよ
うに設けられている。In order to remove the lead frame from which the resin has solidified from the mold, first raise the upper mold, and then extrude the solidified resin portion with a protruding pin (ejector pin) to separate it from the lower mold, thereby separating the lead frame. Take out. Therefore, as shown by a dashed line in FIG. 3, the projecting pin 7 is provided on the bottom surface of the resin package 5.
The injection molding die is formed so as to hit. Moreover, when the protruding pins 7 are located below the bottom surface of the cavity (the bottom surface of the resin package 5), the resin flows into the protruding pins 7 when filling the resin, and a protrusion is formed on the bottom surface of the resin package 5. Inconvenience occurs when handling and mounting the semiconductor device. Therefore, as shown in FIG. 3, the protruding pin 7 is provided so as to protrude into the cavity (resin package 5).
【０００４】このような形状の従来のモノリシックＩＣ
で放熱効果を向上させるには、たとえば前述のダイパッ
ド２の厚さを厚くして樹脂パッケージ５の底面に露出す
るような構造にすることが考えられる。A conventional monolithic IC having such a shape
In order to improve the heat dissipation effect, it is conceivable to increase the thickness of the above-mentioned die pad 2 so as to expose the bottom surface of the resin package 5.
【０００５】[0005]
【発明が解決しようとする課題】前述のようにダイパッ
ドの肉厚を厚くして樹脂パッケージの底面に露出させよ
うとすると、従来のトランスファモールド金型では、前
述のように突出ピンが下面からキャビティ内に突出して
いるため、リードフレームのダイパッド部に突出ピンが
突き当たり、キャビティの底面とダイパッドの底面とが
一致せず、突出ピンの周囲はダイパッドの底面にも樹脂
が付着し、完全にはダイパッドを露出させることができ
ないという問題がある。しかも、突出ピンの突込み深さ
のバラツキにより、裏面に付着する樹脂の厚さがばらつ
き、放熱特性が一定しない。この問題を回避しようとす
ると、放熱板付きのパワーパッケージのトランスファモ
ールド用に突出ピンのひっ込んだ特別の金型を準備しな
ければならない。さらにリードフレームのダイパッド部
だけを厚肉にしなければならず、リードフレームがコス
トアップになる。As described above, when the thickness of the die pad is increased so as to be exposed on the bottom surface of the resin package, in the conventional transfer mold, as described above, the protruding pins are formed from the lower surface into the cavity. Since the protruding pin protrudes into the die pad of the lead frame, the protruding pin hits the die pad, the bottom of the cavity does not match the bottom of the die pad, and the resin adheres to the bottom of the die pad around the protruding pin. There is a problem that can not be exposed. In addition, the thickness of the resin adhering to the back surface varies due to the variation of the protruding depth of the protruding pins, and the heat radiation characteristics are not constant. In order to avoid this problem, it is necessary to prepare a special mold in which protruding pins are caught for transfer molding of a power package with a heat sink. Further, only the die pad portion of the lead frame needs to be thick, which leads to an increase in cost of the lead frame.
【０００６】また、ダイパッドと別に放熱板を形成し、
ダイパッドの裏側に放熱板を設ける構造を考えると、ダ
イパッドと放熱板との形状の相違や接合部の構造に基づ
き樹脂の流動性が悪くなり、樹脂注入の際にエアトラッ
プの発生源が増加し、ボイドや樹脂未充填部分の発生な
どのモールド不良が発生しやすいという問題がある。こ
のことは、とくに放熱板の脱落を防止するため、その一
部を肉薄にして樹脂により抱え込む構造にすると、一層
エアトラップが発生しやすいという問題がある。たとえ
ば、ダイパッド２の裏面側に四角形状の放熱板６を設
け、その４隅に放熱板６を抱え込むように段差を設けた
場合に、樹脂の充填の様子をシミュレーションにより調
べると図２に示されるように、段差部が設けられている
部分への樹脂の流れ込みが非常に低下し、４隅にエアト
ラップＴが生じた。とくにゲート８側に近い角に隣接す
る角部Ｐへの樹脂流れが低下することが分る。なお、こ
のシミュレーションは解析ソフトとして、ＡＣ−テクノ
ロジ社製の商品名「Ｃ−ＭＯＬＤ」を使用し、対称性を
考慮して１ポットの１／４をモデル化した。図２におい
て、８ａはつぎのキャビティに樹脂を注入するスルーゲ
ート、９は下金型のキャビティをさし、キャビティ内の
線は流動先端時間の変化を示している。Further, a heat sink is formed separately from the die pad,
Considering the structure where a heat sink is provided on the back side of the die pad, the flowability of the resin deteriorates due to the difference in shape between the die pad and the heat sink and the structure of the joint, and the number of sources of air traps increases during resin injection. In addition, there is a problem that mold defects such as generation of voids and resin-unfilled portions are likely to occur. This has the problem that an air trap is more likely to occur when a part of the heat sink is made thinner to be held by the resin in order to prevent the heat sink from falling off. For example, FIG. 2 shows the state of filling of the resin by simulation when a rectangular heat sink 6 is provided on the back surface side of the die pad 2 and steps are provided so as to hold the heat sinks 6 at the four corners. As described above, the flow of the resin into the portion where the step portion is provided is extremely reduced, and the air traps T are generated at the four corners. In particular, it can be seen that the resin flow to the corner P adjacent to the corner close to the gate 8 side decreases. In this simulation, a model of 1/4 of one pot was modeled in consideration of symmetry, using the trade name "C-MOLD" manufactured by AC-Technology Inc. as analysis software. In FIG. 2, reference numeral 8a denotes a through gate for injecting a resin into the next cavity, reference numeral 9 denotes a cavity of a lower mold, and a line in the cavity shows a change in a flow front time.
【０００７】本発明はこのような問題を解決するために
なされたもので、ハイパワー用の樹脂成形金型などの特
別の設備を準備することなく、既存の設備を使用しなが
ら、しかも放熱効率がよくモールド不良の発生しにくい
放熱板付き半導体装置を提供することを目的とする。The present invention has been made in order to solve such a problem, and it is possible to use the existing equipment without preparing special equipment such as a resin molding die for high power, and to further reduce the heat radiation efficiency. It is an object of the present invention to provide a semiconductor device with a heat radiating plate, which is less likely to cause mold failure.
【０００８】[0008]
【課題を解決するための手段】本発明による半導体装置
は、半導体ペレットと、該半導体ペレットを表面にマウ
ントするダイパッドと、該ダイパッドの周囲に設けられ
るリード端子部と、該リード端子部と前記半導体ペレッ
トの電極端子とを電気的に接続する接続手段と、該ダイ
パッドの裏面側に設けられる放熱板と、少なくとも前記
半導体ペレットおよびリード端子部の周囲にモールド用
樹脂が充填されて形成される樹脂パッケージとからな
り、前記放熱板の周縁部の少なくとも一部の前記ダイパ
ッドと反対面である裏面に段差部が設けられ、該段差部
に前記モールド用樹脂が充填されて前記放熱板が前記樹
脂パッケージにより挟み込まれ、かつ、前記放熱板の前
記裏面に前記段差部と連通して通気溝が設けられてい
る。A semiconductor device according to the present invention comprises a semiconductor pellet, a die pad for mounting the semiconductor pellet on the surface, a lead terminal provided around the die pad, the lead terminal and the semiconductor. Connecting means for electrically connecting the electrode terminals of the pellet, a heat sink provided on the back side of the die pad, and a resin package formed by filling at least the periphery of the semiconductor pellet and the lead terminal with a molding resin; A step portion is provided on the back surface of the heat dissipation plate opposite to the die pad on at least a part of the peripheral portion, and the molding resin is filled in the step portion, and the heat dissipation plate is formed by the resin package. A ventilation groove is provided so as to be sandwiched and communicate with the step portion on the back surface of the heat sink.
【０００９】この構造にすることにより、とくにエアト
ラップが発生して樹脂の未充填の生じやすい放熱板の隅
などの段差部に連通して通気溝が設けられているため、
通気溝がエアベントとなり、段差部などのエアーは通気
溝に押し出されて樹脂パッケージ内に未充填部分やボイ
ドの発生を防止することができる。With this structure, a ventilation groove is provided so as to communicate with a stepped portion such as a corner of a radiator plate where an air trap is generated and resin is not easily filled.
The ventilation groove serves as an air vent, and the air in the stepped portion and the like is pushed out to the ventilation groove, so that an unfilled portion and a void can be prevented from being generated in the resin package.
【００１０】前記通気溝が、前記樹脂パッケージの形成
の際のモールド用樹脂が流れ込まない断面積で形成され
ることにより、樹脂の染み出しがなくなり都合がよい。[0010] Since the ventilation groove is formed with a cross-sectional area that does not allow the molding resin to flow in forming the resin package, it is convenient that the resin does not exude.
【００１１】前記放熱板の前記裏面の中央部近傍に、前
記モールド樹脂の充填の際の金型の突出ピンが挿入され
得る凹部が設けられ、該凹部と前記通気溝が連通してい
ることにより、従来のキャビティの底面より突出ピンが
キャビティ内に突出している成形金型を使用しても、突
出ピンを逃げることができると共に、段差部のエアーを
逃がしやすくなる。In the vicinity of the center of the back surface of the heat sink, there is provided a concave portion into which a protruding pin of a mold at the time of filling the mold resin can be inserted, and the concave portion communicates with the ventilation groove. Even when using a molding die in which a projecting pin projects from the bottom surface of the conventional cavity into the cavity, the projecting pin can escape and the air in the step can be easily escaped.
【００１２】前記放熱板が矩形形状に形成され、前記段
差部が該矩形形状の４角に設けられていることにより、
効率よく放熱板を樹脂パッケージにより保持することが
できる。The heat sink is formed in a rectangular shape, and the step portions are provided at four corners of the rectangular shape.
The heat sink can be efficiently held by the resin package.
【００１３】[0013]
【発明の実施の形態】つぎに、図面を参照しながら本発
明の半導体装置について説明をする。Next, a semiconductor device according to the present invention will be described with reference to the drawings.
【００１４】本発明の半導体装置は、図１にその一実施
形態の底面および断面の説明図が示されるように、半導
体ペレット１がダイパッド２にマウントされ、その周囲
に設けられるリード端子部３と半導体ペレット１の電極
端子とがワイヤ４などの接続手段により電気的に接続さ
れている。そして、ダイパッド２の裏面側に放熱板６が
設けられ、その放熱板６と樹脂パッケージ５により、少
なくとも半導体ペレット１およびリード端子部３の周囲
が被覆されている。図１に示される例では、放熱板６の
裏面（ダイパッド２と反対面）の４隅に凹みによる段差
部６１が設けられ、その段差部６１の凹んだ部分にもモ
ールド用樹脂が充填されてその樹脂により抱え込まれて
固定される構造になっている。さらに放熱板６の裏面に
は、段差部６１と連通して通気溝６２が形成されてい
る。そして、図１に示される例では、その中心部にモー
ルド用樹脂の充填の際の金型の突出ピンが挿入され得る
大きさの凹部６３が設けられ、その凹部６３と前記通気
溝６２とが連通している。In a semiconductor device according to the present invention, a semiconductor terminal 1 is mounted on a die pad 2 and a lead terminal 3 provided around the die pad 2 as shown in FIG. The electrode terminals of the semiconductor pellet 1 are electrically connected by connection means such as wires 4. A heat sink 6 is provided on the back side of the die pad 2, and at least the periphery of the semiconductor pellet 1 and the lead terminal portion 3 is covered with the heat sink 6 and the resin package 5. In the example shown in FIG. 1, stepped portions 61 are provided at the four corners of the back surface (the surface opposite to the die pad 2) of the heat sink 6, and the recessed portions of the stepped portions 61 are filled with the molding resin. It is structured to be held and fixed by the resin. Further, a ventilation groove 62 is formed on the back surface of the heat sink 6 so as to communicate with the step 61. In the example shown in FIG. 1, a concave portion 63 having a size into which a projecting pin of a mold at the time of filling with the molding resin is inserted is provided at the center thereof, and the concave portion 63 and the ventilation groove 62 are formed. Communicating.
【００１５】放熱板６は、たとえば純銅や銅合金などか
らなる熱伝導のよい材料の０.２〜２ｍｍ程度の厚さの
板材がパンチングなどによりダイパッド２と同じかやや
大きめに打ち抜かれることにより形成されている。この
放熱板６の外形は、図１（ａ）に示されるように、四角
形状に形成されても他の多角形や円形でも構わない。こ
のパンチングの際に、その裏面（樹脂により一体化され
る際にダイパッド２と反対側になる面）で周囲の適当な
箇所（図１に示される例では四角形の４隅）に樹脂が流
れ込む断面積となる深さの段差部６１、その段差部６１
と連通して中央部に延び、樹脂が流れ込まない程度の断
面積となる細くて浅い通気溝６２、およびその中央部に
モールド成形金型の突出ピンの先端が入り得る大きさ
（径）および深さで前記通気溝６２と連通する凹部６３
が形成されている。この段差部６１、通気溝６２、およ
び凹部６３は、共に放熱板６を打抜きにより形成する際
に、打抜き金型にそれぞれの突起部を形成しておくこと
により同時に形成することができる。The heat radiating plate 6 is formed by punching a plate material having a thickness of about 0.2 to 2 mm made of a material having good heat conductivity, such as pure copper or a copper alloy, into the same size as or slightly larger than the die pad 2 by punching or the like. Have been. As shown in FIG. 1A, the outer shape of the heat radiating plate 6 may be formed in a square shape or another polygon or a circle. At the time of this punching, the resin flows into appropriate places (four corners of a square in the example shown in FIG. 1) on the back surface (the surface opposite to the die pad 2 when integrated with the resin). Step 61 having a depth corresponding to the area, and the step 61
And a small and shallow ventilation groove 62 having a cross-sectional area that does not allow resin to flow, and a size (diameter) and depth into which the tip of a protruding pin of a molding die can enter. The recess 63 communicating with the ventilation groove 62
Are formed. The step portion 61, the ventilation groove 62, and the concave portion 63 can be formed at the same time by forming the respective protrusions on the punching die when forming the heat sink 6 by punching.
【００１６】段差部６１の段差は、その凹み部にモール
ド成形の際に溶融樹脂を流し込み、樹脂によりその端部
を挟み込んで放熱板６を保持するためのもので、その段
差により残存する部分の肉厚が機械的強度を有して放熱
板６を樹脂により保持できる程度に深く形成される。具
体例としては、放熱板６の厚さが２ｍｍ程度の場合に深
さＤが０.２〜１ｍｍ程度で、その幅Ｒが１〜３ｍｍ程
度に形成される。そして、通気溝６２は、樹脂が流れ込
まない程度の幅および深さに形成され、具体例として
は、幅が０.３〜３ｍｍ程度、深さが２０〜４０μｍ程
度に形成される。さらに、中心部の凹部６３は、モール
ド金型の突出ピンの先端が挿入され得る大きさ（径）お
よび突出ピンの突込み深さのバラツキを吸収できる深さ
で形成される。具体例としては、大きさは突出ピンの太
さ（径）より０.１ｍｍ程度大きく形成され、深さは０.
１〜０.３ｍｍ程度に形成される。The step of the step portion 61 is for pouring a molten resin into the concave portion at the time of molding and holding the heat radiating plate 6 by sandwiching its end with the resin. The thickness is formed so deep that it has mechanical strength and can hold the heat sink 6 with resin. As a specific example, when the thickness of the heat sink 6 is about 2 mm, the depth D is about 0.2 to 1 mm, and the width R is about 1 to 3 mm. The ventilation groove 62 is formed to have a width and a depth that does not allow the resin to flow therein. As a specific example, the ventilation groove 62 is formed to have a width of about 0.3 to 3 mm and a depth of about 20 to 40 μm. Further, the concave portion 63 at the center is formed to have a size (diameter) into which the tip of the protruding pin of the mold can be inserted and a depth capable of absorbing variations in the protruding depth of the protruding pin. As a specific example, the size is formed about 0.1 mm larger than the thickness (diameter) of the protruding pin, and the depth is 0.1 mm.
It is formed to a thickness of about 1 to 0.3 mm.
【００１７】この放熱板６を樹脂パッケージ５内に封入
するには、リードフレームとは別に放熱板６を形成して
おいて、リードフレームをトランスファモールドする際
に、予めモールド金型の底部に放熱板６を載置しておい
てその上にリードフレームをセッティングしてから上金
型と下金型とで挟み付けて樹脂を注入したり、予めリー
ドフレームのダイパッド２の裏面に放熱板６を接着剤な
どにより付着させておいてから通常の方法でリードフレ
ームをモールド金型内にセッティングして樹脂を注入す
ることなどにより封入することができる。いずれの方法
によっても、放熱板６は、その周縁部の少なくとも一部
で、裏面側に樹脂を回り込ませることにより、樹脂で挟
み付けられて固定される。In order to enclose the heat radiating plate 6 in the resin package 5, the heat radiating plate 6 is formed separately from the lead frame, and when the lead frame is transfer-molded, the heat radiating plate 6 is previously radiated to the bottom of the mold. After the plate 6 is placed and the lead frame is set thereon, the resin is injected by sandwiching the lead frame between the upper die and the lower die, or the heat radiating plate 6 is previously placed on the back surface of the die pad 2 of the lead frame. After being attached with an adhesive or the like, the lead frame can be sealed in the mold by setting the lead frame in a mold and injecting a resin. In any of the methods, the heat sink 6 is sandwiched and fixed by the resin by causing the resin to wrap around the back surface at least at a part of the peripheral edge portion.
【００１８】ダイパッド２およびリード３は、たとえば
純銅や銅合金などからなり、厚さが０.１〜０.２ｍｍ程
度の通常のリードフレームにより形成されており、その
ダイパッド２に通常の方法で半導体ペレット１がダイボ
ンディングされ、リードの端子部３と金線などのワイヤ
４により電気的に接続されている。なお、この接続は、
ワイヤ以外の直接接続するバンプなどの接続手段でもよ
い。The die pad 2 and the lead 3 are made of, for example, a normal lead frame having a thickness of about 0.1 to 0.2 mm made of pure copper, a copper alloy, or the like. The pellet 1 is die-bonded, and is electrically connected to the terminal portion 3 of the lead by a wire 4 such as a gold wire. Note that this connection
Connection means other than wires, such as bumps for direct connection, may be used.
【００１９】本発明の半導体装置によれば、放熱板６に
樹脂により挟み付けるために段差部６１が設けられてい
る部分に樹脂の未充填部が生じやすいが、その段差部６
１と連通して通気溝６２が設けられているため、通気溝
６２がエアベントとなり、段差部６１に樹脂が流れ込
む。その結果、前述の図２に示されるようなエアトラッ
プが生じることがなく、樹脂の未充填部やボイドの発生
が非常に抑制され、非常に信頼性の優れた放熱板付きの
半導体装置が得られる。According to the semiconductor device of the present invention, an unfilled portion of the resin is apt to be formed in the portion where the step portion 61 is provided to be sandwiched between the heat sink 6 and the resin.
Since the ventilation groove 62 is provided so as to communicate with 1, the ventilation groove 62 becomes an air vent, and the resin flows into the stepped portion 61. As a result, an air trap as shown in FIG. 2 described above is not generated, and the generation of unfilled portions and voids of the resin is extremely suppressed, and a semiconductor device with a heat sink having extremely excellent reliability is obtained. Can be
【００２０】さらにその中心部にモールド金型の突出ピ
ンの先端が入る凹部６３が設けられ、通気溝６２と連通
させることにより、エアを逃がす体積が大きくなってよ
り一層未充填部をなくすることができると共に、従来の
全体を樹脂により被覆してモールドする金型で、突出ピ
ンが金型のキャビティの底面より内部に出っ張る金型を
使用しても、突出ピンが凹部６３内に逃げるため、放熱
板６の底面を完全に露出させながら樹脂パッケージ５を
形成することができる。Further, a concave portion 63 is provided at the center thereof for receiving the tip of the protruding pin of the mold. By communicating with the ventilation groove 62, the volume for releasing air is increased and the unfilled portion is further eliminated. In addition to the conventional mold that covers the whole with resin and molds, even when using a mold in which the protruding pin protrudes from the bottom of the cavity of the mold, the protruding pin escapes into the recess 63, The resin package 5 can be formed while completely exposing the bottom surface of the heat sink 6.
【００２１】また、同一面積で平坦な放熱板を露出させ
る場合よりも、金型に当接する放熱板の面積が凹部や通
気溝の分だけ小さいため、放熱板からモールド金型に加
えられる単位面積当たりのモールド時のクランプ荷重が
大きくなり、放熱板露出部のフラッシュ（薄い樹脂漏
れ）不良を防止することができる。Further, since the area of the heat sink in contact with the mold is smaller than that of the case where a flat heat sink having the same area is exposed, the area of the heat sink is smaller than that of the recess and the ventilation groove. As a result, the clamping load at the time of molding increases, and it is possible to prevent a flash (thin resin leakage) defect at the exposed portion of the heat sink.
【００２２】前述の例では、放熱板を樹脂により保持す
るための段差部を四角形状の４隅に設ける例であった
が、角部に限定されることはなく辺の中央部に設けられ
てもよく、また、全周に設けられてもよい。さらに、放
熱板は四角形状でなくても円形状でもよい。円形であれ
ば樹脂の流動性の点で好ましいが、四角形状であれば同
じスペースに対してより大きな放熱板を用いることがで
きる。さらに、前述の例では、通気溝６２と共に中心部
に凹部６３が設けられる例であったが、金型の突出ピン
が出っ張らない構造であれば、凹部６３はとくになくて
も構わない。凹部６３がなければ半導体装置を実装する
場合に基板などとの接触面積が大きくなりより放熱効果
が向上する。一方、凹部６３が設けられておればエアベ
ントの体積が大きくなり、より一層キャビティ内のエア
ーを逃がすことができる。In the above-described example, the step portions for holding the heat radiating plate with the resin are provided at the four corners of the square shape. However, the present invention is not limited to the corner portions, but is provided at the center of the side. And may be provided all around. Further, the heat radiating plate need not be square but may be circular. A circular shape is preferable in terms of the fluidity of the resin, but a rectangular shape allows a larger heat sink to be used for the same space. Further, in the above-described example, the concave portion 63 is provided at the center portion together with the ventilation groove 62. However, the concave portion 63 may be omitted as long as the projecting pin of the mold does not protrude. If there is no concave portion 63, the contact area with a substrate or the like becomes large when the semiconductor device is mounted, so that the heat radiation effect is improved. On the other hand, if the recess 63 is provided, the volume of the air vent becomes large, and the air in the cavity can be further released.
【００２３】[0023]
【発明の効果】本発明によれば、既存のモールド金型を
使用しても、放熱板の殆どの面積を露出させることがで
き、非常に熱放散の優れた半導体装置が得られる。しか
も、放熱板の挿入によりエアトラップが発生しやすいに
も拘らず、通気溝を介してキャビティ内のエアーを効率
よく逃がすことができる。その結果、樹脂の未充填部や
ボイドが発生することなく非常に信頼性の高い半導体装
置を高歩留りで得ることができる。According to the present invention, even if an existing mold is used, most of the area of the heat sink can be exposed, and a semiconductor device with excellent heat dissipation can be obtained. Moreover, despite the fact that an air trap is easily generated by inserting the heat sink, air in the cavity can be efficiently released through the ventilation groove. As a result, an extremely reliable semiconductor device can be obtained at a high yield without generating a resin-unfilled portion or a void.
【図１】本発明の半導体装置の一実施形態の底面および
断面の説明図である。FIG. 1 is an explanatory diagram of a bottom surface and a cross section of an embodiment of a semiconductor device of the present invention.
【図２】周縁部に段差を設けた放熱板を使用した場合の
金型キャビティ内の樹脂の流動状態を示すシミュレーシ
ョン結果の図である。FIG. 2 is a diagram of a simulation result showing a flow state of a resin in a mold cavity when a heat sink having a step on a peripheral edge is used.
【図３】従来の一般的なモノリシックＩＣの断面説明図
である。FIG. 3 is an explanatory sectional view of a conventional general monolithic IC.
１ 半導体ペレット ２ ダイパッド ３ リード端子部 ５ 樹脂パッケージ ６ 放熱板 ６１ 段差部 ６２ 通気溝 ６３ 凹部 DESCRIPTION OF SYMBOLS 1 Semiconductor pellet 2 Die pad 3 Lead terminal part 5 Resin package 6 Heat sink 61 Step part 62 Vent groove 63 Depression
Claims (4)
表面にマウントするダイパッドと、該ダイパッドの周囲
に設けられるリード端子部と、該リード端子部と前記半
導体ペレットの電極端子とを電気的に接続する接続手段
と、該ダイパッドの裏面側に設けられる放熱板と、少な
くとも前記半導体ペレットおよびリード端子部の周囲に
モールド用樹脂が充填されて形成される樹脂パッケージ
とからなり、前記放熱板の周縁部の少なくとも一部の前
記ダイパッドと反対面である裏面に段差部が設けられ、
該段差部に前記モールド用樹脂が充填されて前記放熱板
が前記樹脂パッケージにより挟み込まれ、かつ、前記放
熱板の前記裏面に前記段差部と連通して通気溝が設けら
れてなる半導体装置。1. A semiconductor pellet, a die pad for mounting the semiconductor pellet on a surface, a lead terminal provided around the die pad, and electrically connecting the lead terminal to an electrode terminal of the semiconductor pellet. Connecting means, a heat sink provided on the back side of the die pad, and a resin package formed by filling at least the periphery of the semiconductor pellet and the lead terminal portion with a molding resin; and forming a peripheral portion of the heat sink. A step portion is provided on a back surface opposite to at least a part of the die pad,
A semiconductor device, wherein the step portion is filled with the molding resin, the heat sink is sandwiched by the resin package, and a ventilation groove is provided on the back surface of the heat sink in communication with the step portion.
成の際のモールド用樹脂が流れ込まない断面積で形成さ
れてなる請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the ventilation groove is formed with a cross-sectional area that does not allow a molding resin to flow in forming the resin package.
前記モールド用樹脂の充填の際の金型の突出ピンが挿入
され得る凹部が設けられ、該凹部と前記通気溝とが連通
してなる請求項１または２記載の半導体装置。3. Near the center of the back surface of the heat sink,
3. The semiconductor device according to claim 1, wherein a recess is provided into which a protruding pin of a mold at the time of filling the molding resin is inserted, and the recess communicates with the ventilation groove. 4.
段差部が該矩形形状の４角に設けられてなる請求項１、
２または３記載の半導体装置。4. The heat radiation plate is formed in a rectangular shape, and the step portions are provided at four corners of the rectangular shape.
4. The semiconductor device according to 2 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18698298A JP3883700B2 (en) | 1998-06-16 | 1998-06-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18698298A JP3883700B2 (en) | 1998-06-16 | 1998-06-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000003986A true JP2000003986A (en) | 2000-01-07 |
| JP3883700B2 JP3883700B2 (en) | 2007-02-21 |
Family
ID=16198138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18698298A Expired - Fee Related JP3883700B2 (en) | 1998-06-16 | 1998-06-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3883700B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2836281A1 (en) * | 2002-02-20 | 2003-08-22 | St Microelectronics Sa | Flat conducting grid for semiconductor case, comprises a perforated zone made so to form the radially elongated legs between a central platform and a peripheral part |
| JP2009290182A (en) * | 2008-05-30 | 2009-12-10 | Powertech Technology Inc | Lead frame package structure, and method for manufacturing the same |
| JP2011077215A (en) * | 2009-09-30 | 2011-04-14 | Shindengen Electric Mfg Co Ltd | Semiconductor package |
-
1998
- 1998-06-16 JP JP18698298A patent/JP3883700B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2836281A1 (en) * | 2002-02-20 | 2003-08-22 | St Microelectronics Sa | Flat conducting grid for semiconductor case, comprises a perforated zone made so to form the radially elongated legs between a central platform and a peripheral part |
| US6885088B2 (en) | 2002-02-20 | 2005-04-26 | Stmicroelectronics Sa | Flat leadframe for a semiconductor package |
| JP2009290182A (en) * | 2008-05-30 | 2009-12-10 | Powertech Technology Inc | Lead frame package structure, and method for manufacturing the same |
| JP2011077215A (en) * | 2009-09-30 | 2011-04-14 | Shindengen Electric Mfg Co Ltd | Semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3883700B2 (en) | 2007-02-21 |
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