JP2000003860A - Method and apparatus for exposure, and manufacture of the apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately monitor the exposure amount to a wafer, even if the reflectance of an optical part of an illumination optical system or a beam splitter, etc., thereof changes due to irradiation of exposure light. SOLUTION: This apparatus has a beam splitter 13 which splits a part of laser light between a laser light source 1 and a mask R, an integrator sensor 29 which receives laser light split by the beam splitter 13, a dose monitor 20 which has a photosensitive surface in an area near a wafer W on a stage 19 and receives laser light cast through the mask R from illuminating optical systems 14 to 18 and a main control system 23, which adjusts the ratio of output signal of the integrator sensor 29 and the dose monitor 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used for manufacturing, for example, a semiconductor device or a liquid crystal display device by using a photolithography technique.

[0002]

2. Description of the Related Art When manufacturing a semiconductor device or a liquid crystal display device using photolithography technology, an exposure apparatus for exposing a reticle pattern directly or at a predetermined ratio to a photosensitive material coated on a wafer by reducing the pattern at a predetermined ratio. Is used. In general, an appropriate exposure amount is determined for a photosensitive material applied to a wafer, and therefore, in a conventional exposure apparatus, a beam splitter is arranged in an illumination optical system of exposure light, and the exposure light branched by the beam splitter is used. By monitoring the amount of light, the amount of exposure on the wafer is monitored. Then, when the exposure amount on the wafer reaches the appropriate exposure amount, the exposure of the current shot area of the wafer is stopped, whereby the exposure amount is controlled.

[0003] In recent years, semiconductor devices and the like have been steadily miniaturized, and the minimum line width of a circuit pattern is about to reach a submicron region. For this reason, for example, in a reduction projection type exposure apparatus, a projection optical system having a larger numerical aperture has been developed, but in order to cope with further miniaturization of semiconductor devices and the like, the wavelength of exposure light is further reduced. It is necessary to wavelength.

Therefore, in place of exposing light such as g-ray (wavelength: 436 nm) and i-ray (wavelength: 365 nm) of a mercury lamp which is frequently used at present, excimer laser light which is light of shorter wavelength is expected to be used in the future. ing. Excimer laser light has different wavelengths depending on the type of gas of the oscillation medium of the laser light source. At present, for example, excimer laser light of 248 nm wavelength using krypton fluoride (KrF) as the oscillation medium or argon fluoride as the oscillation medium (Ar
Excimer laser light having a wavelength of 193 nm using F) is promising.

[0005]

However, when excimer laser light is used as the exposure light, the reflectance of the glass material and coating film of an optical component such as an illumination optical system or a beam splitter for the exposure light is reduced by the excimer laser light. It was found that the irradiation may change gradually. This is presumably because irradiation of the excimer laser beam changes the refractive index of the glass material and the coating film of the optical component.

In this case, the reflectivity of the beam splitter disposed in the illumination optical system for monitoring the amount of excimer laser light also changes, and the energy of the excimer laser light branched by the beam splitter reaches the wafer. The ratio with the energy of the excimer laser light also changes. Therefore, if the exposure amount control for the wafer is performed assuming that the ratio is constant, the difference between the actual exposure amount and the appropriate exposure amount may exceed a predetermined allowable value.

In view of the above, the present invention transfers a reticle pattern to a wafer under exposure light, and extracts a part of the exposure light via a beam splitter or the like to monitor the amount of exposure to the wafer. In this case, an object of the present invention is to provide an exposure apparatus capable of accurately monitoring an exposure amount on a wafer even if the reflectance of an optical component of an illumination optical system or a beam splitter thereof changes due to irradiation of exposure light.

[0008]

As shown in FIG. 1, for example, an exposure apparatus according to the present invention comprises a light source (1) for generating exposure light, and a mask on which the exposure light is condensed to form a predetermined pattern. Illumination optical system for illuminating R (14-18)
And an illuminance distribution equalizing optical system (12) for equalizing the illuminance of the exposure light on the mask R, and a stage (19) for mounting the photosensitive substrate W. In the exposure apparatus for exposing the pattern of the mask R onto the photosensitive substrate W on the stage (19), a branch optical system for branching a part of the exposure light between the light source (1) and the mask R (13), first light receiving means (29) for receiving the exposure light branched by the branch optical system (13) on a surface conjugate with the mask R, and the photosensitive substrate on the stage (19). And a second light receiving means (20) having a light receiving surface near W and receiving the exposure light emitted from the illumination optical system (14-18) through the mask R.

Further, according to the present invention, the first light receiving means (2
Sensitivity control means (23) for setting the ratio between the output signal of 9) and the output signal of the second light receiving means (20); the ratio of the set two output signals and the first light receiving means An exposure amount control means (2) for controlling the exposure amount of the exposure light to the photosensitive substrate W based on the output signal of (29).
3).

A third light receiving means (21) serving as an illuminance reference is arranged on the stage (19), and the sensitivity control means (23) outputs an output signal of the third light receiving means (21). The first light receiving means (29) and the second
The calibration of the sensitivity of the light receiving means (20) may be performed.

[0011]

According to the present invention, the irradiation of the exposure light causes the branch optical system (13) to move to the second stage on the stage (19).
Even if the reflectance of the glass or coating film of the optical component up to the light receiving means (20) changes, for example, when the photosensitive substrate W is replaced or when a predetermined photosensitive substrate W is mounted on the stage (19), The sensitivity control means (23) measures the ratio between the output signal of the first light receiving means (29) and the output signal of the second light receiving means (20) and sets the ratio to a predetermined value. By using the ratio of the two output signals set immediately before the exposure and the output signal of the first light receiving means (29), the exposure control means (23) controls the exposure of the photosensitive substrate W. The absolute value can be controlled accurately.

In the case where a third light receiving means (21) serving as an illuminance reference is arranged on the stage (19), one
The first light receiving means (29) at a constant frequency such as once a month;
And calibrating the output signal of the second light receiving means (20) on the stage (19). Thereby, the first light receiving means (2
It is possible to correct a change in sensitivity due to a change with time of the light receiving means (9) and the second light receiving means (20), and to control the absolute value of the exposure amount for the photosensitive substrate W more accurately.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an exposure apparatus according to the present invention will be described below with reference to FIGS. In this embodiment, the present invention is applied to a projection exposure apparatus using excimer laser light as exposure light. FIG. 1 shows a configuration of a projection exposure apparatus of the present embodiment. In FIG. 1, reference numeral 1 denotes a laser light source of KrF excimer laser light, and Brewster windows 2 and 3 are attached to both ends of the laser light source 1. . A reflecting mirror 5 is disposed outside one Brewster window 2 via an etalon 4, and a semi-transmitting mirror 6 is disposed outside the other Brewster window 3.

The wavelength of the natural oscillation of the laser light source 1 is 248.
nm, the bandwidth is 300 pm, and this bandwidth is 3 pm
An etalon 2 is provided to narrow the band. In addition,
Although only the etalon 2 is shown here, the band may be narrowed by a grating, a prism, or the like. Further, since the Brewster windows 2 and 3 are substantially non-reflective for polarized light of a specific angle, only light of this polarized component is amplified between the reflecting mirror 5 and the semi-transmitting mirror 6. As a result, the laser light source 1 oscillates with linearly polarized light, and a substantially linearly polarized laser beam LB0 is emitted to the outside via the semi-transmissive mirror 6. The excimer laser light is a pulsed laser light, and the oscillation state of the laser light source 1 and the power of the emitted laser beam are controlled by a laser power supply 7.

The laser beam LB0 emitted from the semi-transmissive mirror 6 is shaped into a parallel light beam having a desired sectional shape by a beam shaping optical system including lenses 7 and 8, and the laser beam LB1 emitted from the beam shaping optical system. Is 1
The light is converted from linearly polarized light into circularly polarized light by the 波長 wavelength plate 10, reflected by the reflecting mirror 11, and then enters the fly-eye lens 12. The exit surface of the fly-eye lens 12 has a large number of 2
A secondary light source is formed, and laser beams from these many secondary light sources are incident on the beam splitter 13 in a superimposed manner, and the laser beam transmitted through the beam splitter 13 is transmitted to the first relay lens 14, the reticle blind 15, the second relay The reticle R is illuminated with a uniform illuminance distribution via the lens 16, the reflecting mirror 17, and the main condenser lens 18. The reticle blind 15 is conjugate with the reticle R with respect to the second relay lens 16 and the main condenser lens 18, and the reticle blind 15 sets an illumination field on the reticle R.

Under the laser light, the pattern of the reticle R is imaged on the wafer W by the telecentric projection optical system PL on both sides (or one side), and the pattern of the reticle R is projected and exposed on the wafer W. The exit surface (secondary light source forming surface) of the fly-eye lens 12 and the pupil (entrance pupil) surface Ep of the projection optical system PL are conjugate. 19 is the wafer W
Indicates an XY stage for positioning the wafer W in a plane perpendicular to the optical axis of the projection optical system PL, and the wafer stage 19 for positioning the wafer W in the optical axis direction of the projection optical system PL. It is composed of a Z stage and the like.

In the vicinity of the wafer W on the wafer stage 19, an irradiation amount monitor 20 made of a photoelectric conversion element is arranged.
At another position on the wafer stage 19, a reference illuminometer 21 made of a photoelectric conversion element and capable of measuring an absolute value of illuminance with high accuracy is arranged. The height of the light receiving surface of each of the irradiation amount monitor 20 and the reference illuminometer 21 is provided so as to substantially coincide with the height of the surface of the wafer W. The reference illuminometer 21 is used for calibrating the irradiation amount monitor 20 and the like. In other cases, the reference illuminometer 21 is covered with a cover 22 so that the exposure light is not irradiated. Reference numeral 23 denotes a main control system for controlling the operation of the entire apparatus. The photoelectric conversion signal of the irradiation amount monitor 20 is supplied to the main control system 23 as a detection signal P1 via a variable amplifier 24, and the photoelectric conversion signal of the reference illuminometer 21 is provided. P2 is also the main control system 23
Supplied to

The movable mirror 2 is placed on the wafer stage 19.
5 is attached, and the laser interferometer 2 is
By reflecting the laser beam from 6, the laser interferometer 26 measures the coordinates of the wafer stage 19.
The main control system 23 controls the wafer stage 1 via a driving device 27 based on the coordinates and the like obtained by the laser interferometer 26.
9 is performed.

The laser light reflected by the beam splitter 13 immediately after the fly-eye lens 12 enters a light receiving surface of an integrator sensor 29 composed of a photoelectric conversion element via a condenser lens 28. Due to the condenser lens 28, the light receiving surface of the integrator sensor 29 is arranged at a position conjugate with the reticle blind 15 as a field stop on the main optical path. Accordingly, the light receiving surface of the integrator sensor 29 is arranged on a surface conjugate with the exposure surface of the wafer W, and the photoelectric conversion signal of the integrator sensor 29 is converted into the detection signal P0 via the variable amplifier 30 as the main control system 23.
Is supplied to When performing exposure on the wafer W, the integrator sensor 29 generates a photoelectric conversion signal proportional to the power (peak output of the pulse light) of the pulse laser beam emitted from the laser light source 1, and the main control system 23 detects the signal. By integrating the signal P0, the integrated exposure amount for the wafer W can be monitored.

Incidentally, one of the important characteristics of the exposure apparatus is uneven illuminance on the wafer W. A method for measuring the uneven illuminance will be described with reference to FIG. FIG. 2 is a functional block diagram of the main control system 23 for measuring uneven illuminance. In FIG. 2, the main control system 23 drives the wafer stage 19 via the driving device 27 shown in FIG. The entire light exposure area of the projection optical system PL is scanned by the light receiving surface of the quantity monitor 20. At this time, the main control system 23 reads the two-dimensional coordinates (X, Y) of the irradiation amount monitor 20 via the laser interferometer 26. At the same time, the main control system 23 is connected to the laser power source 7 shown in FIG.
While the laser light source 1 is oscillated at a constant output (a constant discharge voltage) via the, the photoelectric conversion signals of the integrator sensor 29 and the irradiation amount monitor 20 are fetched.

The detection signal P0 fetched from the integrator sensor 29 via the variable amplifier 30 and the detection signal P1 fetched from the irradiation amount monitor 20 via the variable amplifier 24 are respectively peaked inside the main control system 23. It is supplied to the dividing means 33 via the hold circuits 31 and 32. Since the excimer laser light is pulsed light, the peak hold circuits 31 and 32 detect the peak values <P0> and <P1> of the corresponding detection signals, respectively. The dividing means 33 calculates the value <P1> / <P0> of the ratio of the two peak values, and
To supply. Further, the coordinates (X, Y) of the irradiation amount monitor 20 obtained by the laser interferometer 26 are converted into an address by the coordinate conversion means 35 in the main control system 23 and supplied to the processing means 34.

The processing means 34 receives the supplied ratio value <P
1> / <P0> is supplied to the data terminal DA of the memory 36, and the corresponding address is stored in the address terminal AD of the memory 36.
To supply. Thus, the ratio value <P1> / <P0> is stored in the memory 36 in a format corresponding to the coordinates (X, Y). The main control system 34 reads the ratio value <P1> / <P0> stored in the memory 36 and displays it on the display means 37 in a format corresponding to the coordinates (X, Y). When measuring the illuminance unevenness, a reticle without a pattern is put on the entire surface as the reticle R in FIG. 1 or the measurement is performed in a state where the reticle R is not placed. Thereby, the illuminance unevenness on the wafer W can be accurately measured.

Next, a method of monitoring the exposure amount on the wafer W during the exposure on the wafer W will be described. In FIG. 1, since the exposure amount on the wafer W cannot be directly measured by the irradiation amount monitor 20 during the exposure on the wafer W, the detection signal P0 obtained from the integrator sensor 29 through the variable amplifier 30 is used. Measure. In this case, the dose monitor 20 is calibrated in advance using the reference illuminometer 21 with the cover 22 removed or using another illuminometer as a reference. Further, a ratio value between the detection signal P1 obtained from the dose monitor 20 via the variable amplifier 24 before the exposure is started and the detection signal P0 obtained from the integrator sensor 29 via the variable amplifier 30, more precisely, A ratio value <P1> / <P0> between a peak value <P1> of the detection signal P1 and a peak value <P1> of the detection signal P0 is obtained and stored.

At this time, as the reticle R, in addition to the reticle R actually exposed, a test reticle in which only a certain portion does not have a pattern may be used. Further, the measurement may be performed in a state where reticle R does not exist. Assuming that the transmittance of the reticle R to be actually exposed is T, the ratio of the two peak values obtained when no reticle is present is converted into <P1> .T / <P0> and stored.

Next, when exposing the pattern of the reticle R to be exposed on the wafer W, the main control system 23 uses the peak value <0 of the detection signal P0 obtained from the integrator sensor 29 via the variable amplifier 30. Monitor only P0>. From this peak value, a peak value <P1> (or <P1> · K) corresponding to the exposure amount on the wafer W can be obtained by calculation. First, the main control system 23 controls the output of the laser light source 1 via the laser power supply 7 to obtain a peak value <P indicating the amount of light received by the integrator sensor 29.
0> is set to a predetermined value. When the exposure is completed in one pulse, the exposure amount is controlled by this. When exposure is performed with a plurality of pulses for each shot on the wafer W, the main control system 23 detects the integrated exposure amount to each shot area of the wafer W by integrating the peak value <P0> for each pulse. When the integrated exposure reaches the appropriate exposure, the exposure of the shot area is stopped. Thereby, the total exposure amount per shot is set to an appropriate exposure amount.

However, when the exposure is continued, the reflectance of the glass material or the coating film of the optical components from the beam splitter 13 to the projection optical system PL changes due to the accumulation of irradiation energy or the like. The ratio value <P1> / <P0> stored first may change. Therefore,
In this example, the ratio value <P1> / <P0> of the output of the integrator sensor 29 and the output of the irradiation amount monitor 20 is actually measured when the reticle R is replaced or periodically. If the value of the ratio fluctuates, the ratio value <P
1> / <P0> is stored. That is, the ratio is set by changing the ratio value stored first to the ratio value measured this time. Thereafter, by monitoring the exposure amount based on the output signal of the integrator sensor 29,
It is possible to secure an appropriate exposure amount on the wafer W.

In this embodiment, since the reference illuminometer 21 serving as the illuminance reference is provided on the wafer stage 19, three kinds of calibration procedures using the illuminance meter will be described below. [First calibration procedure] First, the light receiving surface of the reference illuminometer 21 is moved to the image plane of the projection optical system PL, and the output signal of the reference illuminometer 21 is measured as P2. And integrator sensor 2
9 and measures the integrator sensor 2 using a predetermined fixed coefficient α such that the following equation is satisfied.
9 automatically adjusts the gain of the output signal. P0 × α = P2

Next, the irradiation amount monitor 20 is connected to the projection optical system P.
Move to the position of the image plane of L and measure the output signal P1 of the dose monitor 20. And integrator sensor 2
9, the gain of the output signal of the irradiation amount monitor 20 is automatically adjusted so that the following equation is satisfied. P0 × α = P1

[Second Calibration Procedure] As in the first calibration procedure, a predetermined fixed coefficient α is used, but first, the output signal of the reference illuminometer 21 is used to calibrate the output signal of the dose monitor 20. Then, the output signal of the integrator sensor 29 is calibrated using the output signal of the reference illuminometer 21.

[Third Calibration Procedure] First, the reference illuminometer 21
Is moved to the image plane of the projection optical system PL, and the output signal P2 is measured. Then, the output signal P of the integrator sensor 29
By measuring 0, the value of the coefficient α is changed so that the following equation is satisfied. P0 × α = P2 Next, the irradiation amount monitor 20 is moved to the image plane of the projection optical system PL, and its output signal P1 is measured. Then, by using the changed coefficient α, the gain of the output signal of the dose monitor 20 is automatically adjusted so that the following equation is satisfied. P0 × α = P1

In accordance with any of the above-described calibration procedures, the dose monitor 20 and the integrator sensor 29 on the wafer stage may be calibrated using the reference illuminometer 21 at a constant frequency such as once a month. Good. This allows
The change with time due to the irradiation of the laser light from the irradiation amount monitor 20 and the integrator sensor 29 can be corrected.

Next, another embodiment of the present invention will be described with reference to FIG. In FIG. 3, in which parts corresponding to those in FIG. 1 are assigned the same reference numerals, a reflecting mirror 11 and a fly-eye lens 1 are shown.
2, a depolarizing element 38 is arranged. This depolarizing element 38 is configured by disposing a wedge-shaped quartz plate 39 and a wedge-shaped quartz plate 40 along the optical axis, and rotating the quartz plate 39 and the quartz plate 40 to convert the excimer laser light into a straight line. Converts polarized light to random polarized light. Therefore, in this example, 1/4 of FIG.
The wave plate 10 is not required. Also, the depolarizing element 3 of the present example
8, a function similar to that of the variable amplifier 30 of FIG. 1 can be achieved. Other configurations are the same as those in FIG.

Also in this embodiment, the irradiation amount monitor 20 is used before the exposure starts.
From the detection signal P1 obtained from the integrator sensor 29 via the variable amplifier 30 (or simply an amplifier) from the detection signal P1 obtained through the variable amplifier 24,
More precisely, the value <P1> / <P of the ratio between the peak value <P1> of the detection signal P1 and the peak value <P1> of the detection signal P0.
0> is obtained and stored. When the reticle R is replaced, the ratio value <P1> / <P0> is actually measured. If the ratio value fluctuates, the ratio between the quartz plate 39 and the quartz plate 40 of the depolarizing element 38 is changed. The polarization state of the laser light is changed by adjusting the relative rotation angle. As a result, the reflectivity of the beam splitter 13 changes, and the amount of light received by the integrator sensor 29, and thus the peak value <P0> can be calibrated.

In the above embodiment, for example, a portable illuminometer may be used instead of the irradiation amount monitor 20 on the wafer stage 19. Similar effects can be obtained even when the present invention is applied to a proximity type exposure apparatus that does not use a projection optical system. As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention.

[0035]

According to the present invention, for example, by correcting the ratio between the output signal of the first light receiving means and the output signal of the second light receiving means periodically, the illumination optical system can be irradiated with the exposure light. There is an advantage that even if the reflectance of the optical component or the branching optical system changes, the exposure amount for the wafer can be accurately monitored. Further, when the third light receiving means serving as the illuminance reference is arranged on the stage, the exposure amount on the photosensitive substrate can be controlled more accurately.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a projection exposure apparatus according to an embodiment of an exposure apparatus according to the present invention.

FIG. 2 is a functional block diagram of a main control system 23 when measuring an illuminance distribution on a wafer stage in the embodiment.

FIG. 3 is a configuration diagram showing a main part of another embodiment of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 laser light source 2, 3 Brewster window 4 etalon 6 semi-transmissive mirror 7 laser power supply 10 1/4 wavelength plate 12 fly eye lens 13 beam splitter 15 reticle blind 18 main condenser lens R reticle PL projection optical system W wafer 19 wafer stage 20 Irradiation dose monitor 21 Reference illuminometer 23 Main control system 26 Laser interferometer 27 Drive device 29 Integrator sensor 30 Variable amplifier 38 Depolarization element 39 Quartz plate 40 Quartz plate

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[Procedure amendment]

[Submission date] July 6, 1999 (1999.7.6)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Name of invention

[Correction method] Change

[Correction contents]

[Title of the Invention] exposure method and apparatus, as well as the device
Production method

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Claim 1] Under the exposure light from a light source, an exposure apparatus having an optical system for transferring an image of a pattern formed on a mask onto a predetermined surface, the of the exposure light at the light source side An exposure apparatus comprising: a changing unit configured to change a relationship between the first exposure energy and the second exposure energy of the exposure light on the predetermined surface side based on a change in optical characteristics of the optical system.

2. A first detecting means for receiving the exposure light and outputting a signal corresponding to the first exposure energy between the light source and the mask; 2. The exposure apparatus according to claim 1, further comprising: a second detection unit that receives the exposure light that has passed through the system and outputs a signal corresponding to the second exposure energy.

3. The change in the optical characteristic is obtained by measuring an output signal from the first detection unit and an output signal from the second detection unit measured before transferring the image of the pattern onto the predetermined surface. The change in the signal ratio between the output signal from the first detection unit and the output signal from the second detection unit measured after transferring the image of the pattern onto the predetermined surface with respect to the signal ratio of 3. An exposure apparatus according to claim 2, wherein:

4. A has a storage means for storing a signal ratio measured before the transfer, the changing unit, when the relative stored signal ratio in the storage means, the signal ratio was measured after the transfer has changed 4. The exposure apparatus according to claim 3, wherein the signal ratio stored in the storage unit is changed to a signal ratio measured after the transfer.

And wherein said signal ratios stored in the storage means, based on an output signal from the first detecting means,
5. The exposure apparatus according to claim 4, further comprising an exposure amount control unit that controls an exposure amount of the exposure light to the predetermined surface.

6. The optical system according to claim 1, wherein the optical system includes an illumination optical system that illuminates the mask with the exposure light, and a projection optical system that transfers an image of the pattern onto the predetermined surface. The exposure apparatus according to any one of claims 1 to 5.

The optical properties of wherein said optical system, an exposure apparatus according to any one of claims 1 to 6, characterized in that the reflectivity of the optical components of the glass material or coating film of the optical system .

8. The exposure apparatus according to claim 1 , wherein the optical characteristics of the optical system change by irradiation with the exposure light.

9. Under the exposure light from a light source, an exposure apparatus for transferring onto a predetermined surface an image of a pattern formed on a mask, a splitting optical system for branching a part of the exposure light is branched A first detecting unit for detecting an exposure energy of a part of the exposure light, an exposure energy detected by the first detecting unit, and an exposure energy arranged in an optical path from the branch optical system to the predetermined surface. An exposure amount control unit for controlling an exposure amount of the exposure light to the predetermined surface based on the fluctuation information of the optical characteristics of the optical system.

10. A second sensor disposed on the predetermined surface side for detecting exposure energy of the exposure light on the predetermined surface side.
10. The exposure apparatus according to claim 9, further comprising a detecting unit.

11. has a storage means for storing a relationship between the exposure energy from the first and the second detecting means and the exposure energy from the detection means, said fluctuation information stored in said storage means 11. The exposure apparatus according to claim 10, wherein the relationship between the exposure energies is information that is periodically changed.

12. The method according to claim 11, wherein the variation information is a relationship between an exposure energy from the first detection means and an exposure energy from the second detection means detected each time the mask is replaced. The exposure apparatus according to claim 10, wherein

Wherein said splitting optical system according to claim 9-12, characterized in that disposed between the light source and the mask
The exposure apparatus according to claim 1.

14. An illumination optical system for illuminating the mask with the exposure light having passed through the branch optical system;
The exposure apparatus according to any one of claims 9 to 13, further comprising a projection optical system that transfers the image of the pattern onto the predetermined surface.

The optical properties of 15. wherein the optical system, an exposure apparatus according to any one of claims 9 to 14, characterized in that it comprises a reflectance of the splitting optical system.

16. An exposure apparatus according to claim 2, wherein said second detection means is arranged on a stage on which a photosensitive substrate is mounted.

17. A detection surface of said first detection means is disposed on a plane conjugate with said mask, and a detection surface of said second detection means is disposed at substantially the same position as a surface of said photosensitive substrate. The exposure apparatus according to any one of claims 2 to 16, wherein:

18. The method of claim 17, wherein the predetermined plane is, the exposure apparatus according to any one of claims 1 to 17, characterized in that a shot area on the photosensitive substrate.

19. An exposure apparatus according to claim 1, wherein said exposure light is excimer laser light.

20. An exposure method for transferring an image of a pattern formed on a mask onto a predetermined surface via an optical system under exposure light from a light source, comprising: An exposure method, wherein a relationship between an exposure energy and a second exposure energy of the exposure light on the predetermined surface side is changed every time the optical characteristic of the optical system changes.

21. An exposure amount of the exposure light to the predetermined surface is controlled based on a changed relationship between the first exposure energy and the second exposure energy. Exposure method.

22. The change in the optical properties of the optical system, for the relationship between the first exposure energy to the second exposure energy in prior to transferring the image of the pattern on the predetermined plane, of the pattern The first exposure energy measured after transferring the image onto the predetermined surface and the second exposure energy;
22. The exposure method according to claim 20, wherein the exposure method is obtained from a change in a relationship with the exposure energy.

23. The optical system according to claim 20 , wherein the optical characteristics of the optical system change by irradiation with the exposure light.
3. The exposure method according to claim 2.

24. Under the exposure light from a light source, an exposure method of transferring an image of a pattern formed on a mask onto a predetermined surface, and a portion of the exposure energy of the branch length of the exposure light, the exposure Controlling an exposure amount of the exposure light on the predetermined surface based on information on fluctuations in optical characteristics of an optical system disposed in an optical path from the position where the light is branched to the predetermined surface. Exposure method.

25. The change information includes a portion of the exposure energy of the exposure light, the relationship between the exposure energy of the exposure light that has passed through the optical system, and wherein it is periodically modified information The exposure method according to claim 24, wherein:

26. A method for producing a predetermined device, method of manufacturing a device, characterized in that manufacturing a device using the exposure apparatus according to any one of claims 1 to 20.

27. A method for manufacturing a predetermined device, wherein the device is manufactured using the exposure method according to claim 21.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0001

[Correction method] Change

[Correction contents]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus , an exposure method, and a data processing method for manufacturing, for example, a semiconductor device or a liquid crystal display device by using photolithography technology.
The present invention relates to a vice manufacturing method .

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0007

[Correction method] Change

[Correction contents]

SUMMARY OF THE INVENTION In view of the foregoing, it is an object of the present invention to provide an exposure method capable of accurately monitoring an exposure amount on a wafer when a reticle pattern is transferred to a wafer under exposure light. The present invention also relates to such an exposure.
Exposure apparatus capable of performing the method, and using the exposure method
It also aims to provide a method for manufacturing highly functional devices.
I do.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction contents]

[0008]

SUMMARY OF THE INVENTION First exposure according to the present invention
The device is formed on a mask under exposure light from a light source.
Optical system to transfer the image of the
The exposure light on the light source side
Of the first exposure energy and its
The relationship between the exposure light and the second exposure energy is expressed by the optical system
Having changing means for changing based on a change in optical characteristics of
Things. In addition, the second exposure apparatus according to the present invention can
The pattern formed on the mask under the exposure light from the source
Exposure apparatus for transferring an image of
A branching optical system for branching a part of light, and the branched exposure
First detecting means for detecting exposure energy of a part of light
And the exposure energy detected by the first detecting means.
And placed in the optical path from the branch optical system to the predetermined plane
Based on the fluctuation information of the optical characteristics of the optical system
Exposure that controls the amount of exposure of that exposure light on a given surface
And control means. Next, the second embodiment of the present invention
The first exposure method uses a mask under exposure light from a light source.
The image of the formed pattern is transferred onto a predetermined surface via an optical system.
The exposure method on the light source side
The first exposure energy of light and its
The relationship between the exposure light of the
It changes every time the optical characteristics of the system change. Ma
Further, the second exposure method according to the present invention comprises the step of:
The image of the pattern formed on the mask
In the exposure method of transferring to the
Some exposure energy and the position where the exposure light was branched
Of the optical system arranged in the optical path from
Based on the gender fluctuation information,
This controls the exposure amount of the exposure light. Next, the present invention
The first and second device manufacturing methods according to
A method for manufacturing a chair, comprising the steps of:
The device is manufactured by using the exposure method.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Deleted

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Deleted

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

[0011]

According to the first exposure apparatus of the present invention, the
The first exposure energy on the light source side and the second exposure energy on the predetermined surface side
Of the optical characteristics of the optical system
Change according to the
The absolute value of the light amount can be controlled accurately,
The difference between the actual exposure for
Will not exceed. Further, a second exposure apparatus of the present invention
According to the above, the exposure energy detected by the first detecting means is
And the optical path from the branch optical system to the predetermined surface.
Based on the fluctuation information of the optical characteristics of the arranged optical system,
To control the amount of exposure of the exposure light to the predetermined surface.
Placed in the optical path from the branch optical system to the predetermined surface
Of the glass or coating film of the optical components of the
Even if the emissivity changes, the absolute value of the exposure for the given surface
Can be accurately controlled. In addition, the first or second aspect of the present invention
According to the second exposure method,
Can be accurately controlled. In addition, the present invention
According to the first or second method for manufacturing a device, the present invention
Exposure system or exposure method
Control the volume to produce devices such as semiconductor elements.
Can be

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0012

[Correction method] Deleted

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0015

[Correction method] Change

[Correction contents]

The laser beam LB0 emitted from the semi-transmissive mirror 6 is shaped into a parallel beam having a desired cross-sectional shape by a beam shaping optical system including lenses 8 and 9, and the laser beam LB1 emitted from the beam shaping optical system. Is 1
The light is converted from linearly polarized light into circularly polarized light by the 波長 wavelength plate 10, reflected by the reflecting mirror 11, and then enters the fly-eye lens 12. The exit surface of the fly-eye lens 12 has a large number of 2
A secondary light source is formed, and laser beams from these many secondary light sources are incident on the beam splitter 13 in a superimposed manner, and the laser beam transmitted through the beam splitter 13 is transmitted to the first relay lens 14, the reticle blind 15, the second relay The reticle R is illuminated with a uniform illuminance distribution via the lens 16, the reflecting mirror 17, and the main condenser lens 18. The reticle blind 15 is conjugate with the reticle R with respect to the second relay lens 16 and the main condenser lens 18, and the reticle blind 15 sets an illumination field on the reticle R.

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0035

[Correction method] Change

[Correction contents]

[0035]

According to the present invention, the exposure energy on the light source side is
And the exposure energy of the predetermined surface
By changing according to the change of the characteristic,
The difference between the actual exposure and the proper exposure exceeds the allowable value.
No more.

Claims (2)

[Claims] 1. A light source for generating exposure light, an illumination optical system for condensing the exposure light and illuminating a mask on which a predetermined pattern is formed, and uniformizing the illuminance of the exposure light on the mask An exposure apparatus that has an illuminance distribution uniforming optical system and a stage on which a photosensitive substrate is mounted, and exposes the pattern of the mask onto the photosensitive substrate on the stage under the exposure light. A branch optical system for branching a part of the exposure light with the mask, a first light receiving unit for receiving the exposure light branched by the branch optical system on a surface conjugate with the mask, and the stage Having a light-receiving surface near the photosensitive substrate above,
A second light receiving unit that receives the exposure light emitted from the illumination optical system through a mask, and a ratio between an output signal of the first light receiving unit and an output signal of the second light receiving unit is obtained; A sensitivity control unit for setting the ratio; and an exposure amount for controlling an exposure amount of the exposure light to the photosensitive substrate based on the set ratio of the two output signals and the output signal of the first light receiving unit. An exposure apparatus, comprising: a control unit. 2. A third light receiving means serving as an illuminance reference is arranged on the stage, and the sensitivity control means controls the first light receiving means and the second light receiving means based on an output signal of the third light receiving means. 2. An exposure apparatus according to claim 1, wherein the sensitivity of said light receiving means is calibrated.