JP1693552S - - Google Patents

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Publication number
JP1693552S
JP1693552S JPD2021-7523F JP2021007523F JP1693552S JP 1693552 S JP1693552 S JP 1693552S JP 2021007523 F JP2021007523 F JP 2021007523F JP 1693552 S JP1693552 S JP 1693552S
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JPD2021-7523F
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JPD2021-7523F priority Critical patent/JP1693552S/ja
Application granted granted Critical
Publication of JP1693552S publication Critical patent/JP1693552S/ja
Priority to US29/807,404 priority patent/USD992519S1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JPD2021-7523F 2021-04-09 2021-04-09 Active JP1693552S (en:Method)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JPD2021-7523F JP1693552S (en:Method) 2021-04-09 2021-04-09
US29/807,404 USD992519S1 (en) 2021-04-09 2021-09-10 Semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPD2021-7523F JP1693552S (en:Method) 2021-04-09 2021-04-09

Publications (1)

Publication Number Publication Date
JP1693552S true JP1693552S (en:Method) 2021-08-23

Family

ID=77389712

Family Applications (1)

Application Number Title Priority Date Filing Date
JPD2021-7523F Active JP1693552S (en:Method) 2021-04-09 2021-04-09

Country Status (2)

Country Link
US (1) USD992519S1 (en:Method)
JP (1) JP1693552S (en:Method)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355637A (en) * 1965-04-15 1967-11-28 Rca Corp Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel
USD504874S1 (en) * 2004-08-11 2005-05-10 Semiconductor Components Industries, Llc Semiconductor device package
JP2009043820A (ja) * 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
JP5834461B2 (ja) * 2011-04-14 2015-12-24 日本電気株式会社 半導体レーザモジュール及びその製造方法
JP2017147272A (ja) * 2016-02-15 2017-08-24 ローム株式会社 半導体装置およびその製造方法、ならびに、半導体装置の製造に使用されるリードフレーム中間体
US10262928B2 (en) * 2017-03-23 2019-04-16 Rohm Co., Ltd. Semiconductor device
JP7100980B2 (ja) * 2018-01-22 2022-07-14 ローム株式会社 Ｌｅｄパッケージ
US10879146B2 (en) * 2018-04-06 2020-12-29 Rohm Co., Ltd. Electronic component and manufacturing method thereof
JP7312604B2 (ja) * 2019-05-13 2023-07-21 ローム株式会社 半導体装置
JP1682283S (en:Method) * 2020-07-31 2021-03-29
JP1680788S (en:Method) * 2020-07-31 2021-03-08
JP7628810B2 (ja) * 2020-11-19 2025-02-12 ローム株式会社 半導体発光装置

Also Published As

Publication number Publication date
USD992519S1 (en) 2023-07-18

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