ITUD20110133A1 - "CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION" - Google Patents
"CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION"Info
- Publication number
- ITUD20110133A1 ITUD20110133A1 IT000133A ITUD20110133A ITUD20110133A1 IT UD20110133 A1 ITUD20110133 A1 IT UD20110133A1 IT 000133 A IT000133 A IT 000133A IT UD20110133 A ITUD20110133 A IT UD20110133A IT UD20110133 A1 ITUD20110133 A1 IT UD20110133A1
- Authority
- IT
- Italy
- Prior art keywords
- cmos
- application
- ray image
- image production
- integration sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/927,961 US8039811B1 (en) | 2009-12-04 | 2010-11-30 | CMOS time delay integration sensor for X-ray imaging applications |
Publications (1)
Publication Number | Publication Date |
---|---|
ITUD20110133A1 true ITUD20110133A1 (en) | 2012-05-31 |
Family
ID=44764467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT000133A ITUD20110133A1 (en) | 2010-11-30 | 2011-08-24 | "CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION" |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5809492B2 (en) |
CN (1) | CN102611853B (en) |
DE (1) | DE102011052874B4 (en) |
GB (1) | GB2486039B (en) |
IT (1) | ITUD20110133A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104270584A (en) * | 2014-09-15 | 2015-01-07 | 天津大学 | Current summation type pixel structure used for CMOS-TDI image sensor |
JP6623734B2 (en) * | 2015-12-14 | 2019-12-25 | セイコーエプソン株式会社 | Image reading device and semiconductor device |
FR3047112B1 (en) * | 2016-01-22 | 2018-01-19 | Teledyne E2V Semiconductors Sas | MULTILINEAR IMAGE SENSOR WITH LOAD TRANSFER WITH INTEGRATION TIME ADJUSTMENT |
CN110034136B (en) * | 2017-12-08 | 2022-12-16 | X-Scan映像股份有限公司 | Multi-energy X-ray detector based on integrated side-by-side pixel array sensor |
KR102639599B1 (en) * | 2018-12-28 | 2024-02-21 | 엘지디스플레이 주식회사 | Digital x-ray detector and method for driving the same |
US11877079B2 (en) * | 2020-12-22 | 2024-01-16 | Samsung Electronics Co., Ltd. | Time-resolving computational image sensor architecture for time-of-flight, high-dynamic-range, and high-speed imaging |
EP4358505A1 (en) * | 2021-07-13 | 2024-04-24 | Hamamatsu Photonics K.K. | X-ray image acquisition device and x-ray image acquisition system |
CN113824910B (en) * | 2021-08-10 | 2023-07-21 | 西安理工大学 | Analog domain advanced TDI (time delay integration) acceleration circuit and acceleration implementation method thereof |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6678048B1 (en) | 1998-07-20 | 2004-01-13 | Sandia Corporation | Information-efficient spectral imaging sensor with TDI |
US7397506B2 (en) * | 1998-08-06 | 2008-07-08 | Intel Corporation | Reducing the effect of noise in an imaging system |
US7268814B1 (en) * | 1999-10-05 | 2007-09-11 | California Institute Of Technology | Time-delayed-integration imaging with active pixel sensors |
JP2003511920A (en) * | 1999-10-05 | 2003-03-25 | カリフォルニア インスティテュート オブ テクノロジー | Time-delay integration imaging with active pixel sensors |
JP4265964B2 (en) * | 2003-11-12 | 2009-05-20 | 富士フイルム株式会社 | Radiation image reading method and apparatus |
US7532242B1 (en) * | 2004-07-26 | 2009-05-12 | Raytheon Company | Pipelined amplifier time delay integration |
FI119864B (en) * | 2006-06-05 | 2009-04-15 | Planmeca Oy | X-ray imaging sensor and X-ray imaging procedure |
FR2906081B1 (en) * | 2006-09-19 | 2008-11-28 | E2V Semiconductors Soc Par Act | CMOS LINEAR IMAGE SENSOR WITH CHARGE TRANSFER TYPE OPERATION |
US7675561B2 (en) | 2006-09-28 | 2010-03-09 | Cypress Semiconductor Corporation | Time delayed integration CMOS image sensor with zero desynchronization |
DE102007030985B4 (en) | 2007-07-04 | 2009-04-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Image sensor, method of operating an image sensor and computer program |
GB0806427D0 (en) | 2008-04-09 | 2008-05-14 | Cmosis Nv | Parallel analog-to-digital conversion in pixel arrays |
JP2010135464A (en) * | 2008-12-03 | 2010-06-17 | Konica Minolta Business Technologies Inc | Solid-state imaging element, and imaging apparatus |
JP5257134B2 (en) * | 2009-02-25 | 2013-08-07 | コニカミノルタビジネステクノロジーズ株式会社 | Solid-state imaging device and imaging apparatus including the same |
US8039811B1 (en) * | 2009-12-04 | 2011-10-18 | X-Scan Imaging Corporation | CMOS time delay integration sensor for X-ray imaging applications |
CN101883221B (en) * | 2010-06-29 | 2011-10-05 | 天津大学 | Circuit and method for realizing TDI in CMOS image sensor |
-
2011
- 2011-08-12 GB GB1113980.5A patent/GB2486039B/en active Active
- 2011-08-19 DE DE102011052874.1A patent/DE102011052874B4/en active Active
- 2011-08-24 IT IT000133A patent/ITUD20110133A1/en unknown
- 2011-09-08 JP JP2011196089A patent/JP5809492B2/en active Active
- 2011-09-09 CN CN201110266773.0A patent/CN102611853B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102611853A (en) | 2012-07-25 |
DE102011052874A1 (en) | 2012-06-14 |
GB2486039B (en) | 2016-10-05 |
GB201113980D0 (en) | 2011-09-28 |
CN102611853B (en) | 2016-06-08 |
JP2012120153A (en) | 2012-06-21 |
JP5809492B2 (en) | 2015-11-11 |
GB2486039A (en) | 2012-06-06 |
DE102011052874B4 (en) | 2021-08-05 |
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