ITUD20110133A1 - "CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION" - Google Patents

"CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION"

Info

Publication number
ITUD20110133A1
ITUD20110133A1 IT000133A ITUD20110133A ITUD20110133A1 IT UD20110133 A1 ITUD20110133 A1 IT UD20110133A1 IT 000133 A IT000133 A IT 000133A IT UD20110133 A ITUD20110133 A IT UD20110133A IT UD20110133 A1 ITUD20110133 A1 IT UD20110133A1
Authority
IT
Italy
Prior art keywords
cmos
application
ray image
image production
integration sensor
Prior art date
Application number
IT000133A
Other languages
Italian (it)
Inventor
Shizu Li
Chinlee Wang
Original Assignee
Scan Imaging Corp X
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/927,961 external-priority patent/US8039811B1/en
Application filed by Scan Imaging Corp X filed Critical Scan Imaging Corp X
Publication of ITUD20110133A1 publication Critical patent/ITUD20110133A1/en

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/768Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75Circuitry for providing, modifying or processing image signals from the pixel array
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/32Transforming X-rays

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
IT000133A 2010-11-30 2011-08-24 "CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION" ITUD20110133A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/927,961 US8039811B1 (en) 2009-12-04 2010-11-30 CMOS time delay integration sensor for X-ray imaging applications

Publications (1)

Publication Number Publication Date
ITUD20110133A1 true ITUD20110133A1 (en) 2012-05-31

Family

ID=44764467

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000133A ITUD20110133A1 (en) 2010-11-30 2011-08-24 "CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION"

Country Status (5)

Country Link
JP (1) JP5809492B2 (en)
CN (1) CN102611853B (en)
DE (1) DE102011052874B4 (en)
GB (1) GB2486039B (en)
IT (1) ITUD20110133A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104270584A (en) * 2014-09-15 2015-01-07 天津大学 Current summation type pixel structure used for CMOS-TDI image sensor
JP6623734B2 (en) * 2015-12-14 2019-12-25 セイコーエプソン株式会社 Image reading device and semiconductor device
FR3047112B1 (en) * 2016-01-22 2018-01-19 Teledyne E2V Semiconductors Sas MULTILINEAR IMAGE SENSOR WITH LOAD TRANSFER WITH INTEGRATION TIME ADJUSTMENT
CN110034136B (en) * 2017-12-08 2022-12-16 X-Scan映像股份有限公司 Multi-energy X-ray detector based on integrated side-by-side pixel array sensor
KR102639599B1 (en) * 2018-12-28 2024-02-21 엘지디스플레이 주식회사 Digital x-ray detector and method for driving the same
US11877079B2 (en) * 2020-12-22 2024-01-16 Samsung Electronics Co., Ltd. Time-resolving computational image sensor architecture for time-of-flight, high-dynamic-range, and high-speed imaging
EP4358505A1 (en) * 2021-07-13 2024-04-24 Hamamatsu Photonics K.K. X-ray image acquisition device and x-ray image acquisition system
CN113824910B (en) * 2021-08-10 2023-07-21 西安理工大学 Analog domain advanced TDI (time delay integration) acceleration circuit and acceleration implementation method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6678048B1 (en) 1998-07-20 2004-01-13 Sandia Corporation Information-efficient spectral imaging sensor with TDI
US7397506B2 (en) * 1998-08-06 2008-07-08 Intel Corporation Reducing the effect of noise in an imaging system
US7268814B1 (en) * 1999-10-05 2007-09-11 California Institute Of Technology Time-delayed-integration imaging with active pixel sensors
JP2003511920A (en) * 1999-10-05 2003-03-25 カリフォルニア インスティテュート オブ テクノロジー Time-delay integration imaging with active pixel sensors
JP4265964B2 (en) * 2003-11-12 2009-05-20 富士フイルム株式会社 Radiation image reading method and apparatus
US7532242B1 (en) * 2004-07-26 2009-05-12 Raytheon Company Pipelined amplifier time delay integration
FI119864B (en) * 2006-06-05 2009-04-15 Planmeca Oy X-ray imaging sensor and X-ray imaging procedure
FR2906081B1 (en) * 2006-09-19 2008-11-28 E2V Semiconductors Soc Par Act CMOS LINEAR IMAGE SENSOR WITH CHARGE TRANSFER TYPE OPERATION
US7675561B2 (en) 2006-09-28 2010-03-09 Cypress Semiconductor Corporation Time delayed integration CMOS image sensor with zero desynchronization
DE102007030985B4 (en) 2007-07-04 2009-04-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Image sensor, method of operating an image sensor and computer program
GB0806427D0 (en) 2008-04-09 2008-05-14 Cmosis Nv Parallel analog-to-digital conversion in pixel arrays
JP2010135464A (en) * 2008-12-03 2010-06-17 Konica Minolta Business Technologies Inc Solid-state imaging element, and imaging apparatus
JP5257134B2 (en) * 2009-02-25 2013-08-07 コニカミノルタビジネステクノロジーズ株式会社 Solid-state imaging device and imaging apparatus including the same
US8039811B1 (en) * 2009-12-04 2011-10-18 X-Scan Imaging Corporation CMOS time delay integration sensor for X-ray imaging applications
CN101883221B (en) * 2010-06-29 2011-10-05 天津大学 Circuit and method for realizing TDI in CMOS image sensor

Also Published As

Publication number Publication date
CN102611853A (en) 2012-07-25
DE102011052874A1 (en) 2012-06-14
GB2486039B (en) 2016-10-05
GB201113980D0 (en) 2011-09-28
CN102611853B (en) 2016-06-08
JP2012120153A (en) 2012-06-21
JP5809492B2 (en) 2015-11-11
GB2486039A (en) 2012-06-06
DE102011052874B4 (en) 2021-08-05

Similar Documents

Publication Publication Date Title
ITUD20110133A1 (en) "CMOS DELAYED INTEGRATION SENSOR FOR APPLICATION IN X-RAY IMAGE PRODUCTION"
GB2480927B (en) Noise-cancelling image sensors
HK1171592A1 (en) Image sensor having supplemental capacitive coupling node
IL231098B (en) Pixel-grouping image sensor
BRPI1009211A2 (en) "image sensor"
IT1401367B1 (en) METHOD TO COMBINE REFERENCE IMAGES TO A THREE-DIMENSIONAL CONTENT.
EP2197032A4 (en) Solid-state image sensor
GB201021144D0 (en) Improved image sensor arrangement
GB201200089D0 (en) Color-optimized image sensor
GB2476140B (en) Image processing techniques
DE112010003223A5 (en) IMAGING LIDAR SENSOR
IT1395641B1 (en) TURBIDITY SENSOR FOR A APPLIANCE
EP2645570A4 (en) Optical motion sensor
FR2945666B1 (en) IMAGE SENSOR.
EP2739993A4 (en) X-ray image sensor
GB201013783D0 (en) Image sensor
IT1405014B1 (en) PROXIMITY SENSOR'
EP2398052A4 (en) Linear image sensor
EP2398053A4 (en) Image sensor
FR2961631B1 (en) PIXEL IMAGE SENSOR WITH SIX TRANSISTORS
FR2959904B1 (en) IMAGING METHOD
EP2320461A4 (en) Method for manufacturing cmos image sensor
GB0809337D0 (en) Image sensor
GB2495194B (en) Imaging sensor
GB201003723D0 (en) Improvements in or relating to image sensors