ITUA20162322A1 - Procedimento per pilotare stadi a commutazione, circuito e dispositivo corrispondenti - Google Patents

Procedimento per pilotare stadi a commutazione, circuito e dispositivo corrispondenti

Info

Publication number
ITUA20162322A1
ITUA20162322A1 ITUA2016A002322A ITUA20162322A ITUA20162322A1 IT UA20162322 A1 ITUA20162322 A1 IT UA20162322A1 IT UA2016A002322 A ITUA2016A002322 A IT UA2016A002322A IT UA20162322 A ITUA20162322 A IT UA20162322A IT UA20162322 A1 ITUA20162322 A1 IT UA20162322A1
Authority
IT
Italy
Prior art keywords
piloting
correspondent
stages
switching
procedure
Prior art date
Application number
ITUA2016A002322A
Other languages
English (en)
Inventor
Davide Luigi Brambilla
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITUA2016A002322A priority Critical patent/ITUA20162322A1/it
Priority to EP16203539.8A priority patent/EP3229374A1/en
Publication of ITUA20162322A1 publication Critical patent/ITUA20162322A1/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
ITUA2016A002322A 2016-04-05 2016-04-05 Procedimento per pilotare stadi a commutazione, circuito e dispositivo corrispondenti ITUA20162322A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITUA2016A002322A ITUA20162322A1 (it) 2016-04-05 2016-04-05 Procedimento per pilotare stadi a commutazione, circuito e dispositivo corrispondenti
EP16203539.8A EP3229374A1 (en) 2016-04-05 2016-12-12 A method for driving switching stages, and corresponding circuit and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUA2016A002322A ITUA20162322A1 (it) 2016-04-05 2016-04-05 Procedimento per pilotare stadi a commutazione, circuito e dispositivo corrispondenti

Publications (1)

Publication Number Publication Date
ITUA20162322A1 true ITUA20162322A1 (it) 2017-10-05

Family

ID=56551473

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUA2016A002322A ITUA20162322A1 (it) 2016-04-05 2016-04-05 Procedimento per pilotare stadi a commutazione, circuito e dispositivo corrispondenti

Country Status (2)

Country Link
EP (1) EP3229374A1 (it)
IT (1) ITUA20162322A1 (it)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107844A (en) * 1998-09-28 2000-08-22 Tripath Technology, Inc. Methods and apparatus for reducing MOSFET body diode conduction in a half-bridge configuration
US20090002060A1 (en) * 2007-06-28 2009-01-01 International Rectifier Corporation Negative n-epi biasing sensing and high side gate driver output spurious turn-on prevention due to n-epi p-sub diode conduction during n-epi negative transient voltage
US20090027096A1 (en) * 2007-07-27 2009-01-29 Andre Mourrier Dc brushed motor drive with circuit to reduce di/dt and emi, for mosfet vth detection, voltage source detection, and overpower protection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107844A (en) * 1998-09-28 2000-08-22 Tripath Technology, Inc. Methods and apparatus for reducing MOSFET body diode conduction in a half-bridge configuration
US20090002060A1 (en) * 2007-06-28 2009-01-01 International Rectifier Corporation Negative n-epi biasing sensing and high side gate driver output spurious turn-on prevention due to n-epi p-sub diode conduction during n-epi negative transient voltage
US20090027096A1 (en) * 2007-07-27 2009-01-29 Andre Mourrier Dc brushed motor drive with circuit to reduce di/dt and emi, for mosfet vth detection, voltage source detection, and overpower protection

Also Published As

Publication number Publication date
EP3229374A1 (en) 2017-10-11

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