ITTO991137A0 - CROSS-LINKING MONOMERS FOR PHOTORESIST AND PROCEDURE FOR THE PREPARATION OF PHOTORESIST POLYMERS USING SUCH MONOMERS. - Google Patents

CROSS-LINKING MONOMERS FOR PHOTORESIST AND PROCEDURE FOR THE PREPARATION OF PHOTORESIST POLYMERS USING SUCH MONOMERS.

Info

Publication number
ITTO991137A0
ITTO991137A0 IT99TO001137A ITTO991137A ITTO991137A0 IT TO991137 A0 ITTO991137 A0 IT TO991137A0 IT 99TO001137 A IT99TO001137 A IT 99TO001137A IT TO991137 A ITTO991137 A IT TO991137A IT TO991137 A0 ITTO991137 A0 IT TO991137A0
Authority
IT
Italy
Prior art keywords
photoresist
monomers
procedure
preparation
cross
Prior art date
Application number
IT99TO001137A
Other languages
Italian (it)
Inventor
Min-Ho Jung
Ki-Ho Baik
Jae Chang Jung
Keun Kyu Kong
Geun Su Lee
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of ITTO991137A0 publication Critical patent/ITTO991137A0/en
Publication of ITTO991137A1 publication Critical patent/ITTO991137A1/en
Application granted granted Critical
Publication of IT1308679B1 publication Critical patent/IT1308679B1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10—Esters
    • C08F22/1006—Esters of polyhydric alcohols or polyhydric phenols, e.g. ethylene glycol dimethacrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT1999TO001137A 1998-12-31 1999-12-21 RETICULATION MONOMERS FOR PHOTORESIST AND PROCEDURE FOR THE PREPARATION OF PHOTORESIST POLYMERS USING SUCH MONOMERS. IT1308679B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1998-0063793A KR100362937B1 (en) 1998-12-31 1998-12-31 Novel photoresist crosslinkers, photoresist polymers and photoresist compositions comprising them

Publications (3)

Publication Number Publication Date
ITTO991137A0 true ITTO991137A0 (en) 1999-12-21
ITTO991137A1 ITTO991137A1 (en) 2001-06-21
IT1308679B1 IT1308679B1 (en) 2002-01-09

Family

ID=19570347

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999TO001137A IT1308679B1 (en) 1998-12-31 1999-12-21 RETICULATION MONOMERS FOR PHOTORESIST AND PROCEDURE FOR THE PREPARATION OF PHOTORESIST POLYMERS USING SUCH MONOMERS.

Country Status (9)

Country Link
JP (1) JP4001445B2 (en)
KR (1) KR100362937B1 (en)
CN (1) CN1303114C (en)
DE (1) DE19960506A1 (en)
FR (1) FR2788062B1 (en)
GB (1) GB2345286B (en)
IT (1) IT1308679B1 (en)
NL (1) NL1013916C2 (en)
TW (1) TWI222968B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208260B2 (en) * 1998-12-31 2007-04-24 Hynix Semiconductor Inc. Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
KR100557608B1 (en) * 1999-02-10 2006-03-10 주식회사 하이닉스반도체 Novel photoresist crosslinker and photoresist composition using the same
KR100557609B1 (en) * 1999-02-22 2006-03-10 주식회사 하이닉스반도체 Novel photoresist crosslinker and photoresist composition using the same
US6818376B2 (en) 1999-08-23 2004-11-16 Hynix Semiconductor Inc. Cross-linker monomer comprising double bond and photoresist copolymer containing the same
KR100520183B1 (en) 1999-08-23 2005-10-10 주식회사 하이닉스반도체 Photoresist copolymer containing crosslinker which has two double bonds
KR100546110B1 (en) * 2000-01-21 2006-01-24 주식회사 하이닉스반도체 Photoresist Crosslinking Agent and Photoresist Composition Containing the Same
US6664022B1 (en) * 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
KR20020082006A (en) * 2001-04-23 2002-10-30 금호석유화학 주식회사 Novel acid-labile polymer and formulation material using an acid-labile polymer
US7138218B2 (en) 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US7338742B2 (en) 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (en) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Photoresist Composition for EUV and Method for forming Photoresist Pattern using the same
JP4979477B2 (en) * 2004-03-08 2012-07-18 三菱レイヨン株式会社 Resist polymer, resist composition, pattern manufacturing method, and resist polymer raw material compound
US20070031758A1 (en) * 2005-08-03 2007-02-08 Jsr Corporation Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material
KR100694412B1 (en) 2006-02-24 2007-03-12 주식회사 하이닉스반도체 Method for forming fine patterns of semiconductor devices
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
JP5233985B2 (en) * 2007-02-26 2013-07-10 Ｊｓｒ株式会社 Resin composition for forming fine pattern and method for forming fine pattern
KR20180061217A (en) * 2015-09-28 2018-06-07 쓰리엠 이노베이티브 프로퍼티즈 캄파니 Patterned film articles and methods comprising a cleavable cross-linking agent
CN116102938B (en) * 2021-11-09 2023-10-20 上海新阳半导体材料股份有限公司 Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1275471A (en) * 1969-06-04 1972-05-24 Du Pont Improvements relating to photo-resists
GB1277674A (en) * 1969-08-04 1972-06-14 Ford Motor Co Painting of polyolefins
JPS5713444A (en) * 1980-06-27 1982-01-23 Tamura Kaken Kk Photosensitive composition
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
WO1992007022A1 (en) * 1990-10-23 1992-04-30 Atomic Energy Of Canada Limited Process for the preparation of cellulosic fibre-reinforced thermoplastic composite materials
KR100384746B1 (en) * 1994-09-13 2003-08-25 제온 코포레이션 Photosensitive Polyimide Resin Composition

Also Published As

Publication number Publication date
NL1013916C2 (en) 2002-12-03
KR20000047041A (en) 2000-07-25
GB2345286A (en) 2000-07-05
TWI222968B (en) 2004-11-01
DE19960506A1 (en) 2000-09-07
CN1258670A (en) 2000-07-05
JP4001445B2 (en) 2007-10-31
ITTO991137A1 (en) 2001-06-21
NL1013916A1 (en) 2000-07-03
FR2788062B1 (en) 2004-09-10
FR2788062A1 (en) 2000-07-07
GB2345286B (en) 2004-06-30
IT1308679B1 (en) 2002-01-09
JP2000199951A (en) 2000-07-18
GB9929650D0 (en) 2000-02-09
CN1303114C (en) 2007-03-07
KR100362937B1 (en) 2003-10-04

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