ITRM20010517A0 - Struttura di condensatore integrato di polisilicio. - Google Patents

Struttura di condensatore integrato di polisilicio.

Info

Publication number
ITRM20010517A0
ITRM20010517A0 IT2001RM000517A ITRM20010517A ITRM20010517A0 IT RM20010517 A0 ITRM20010517 A0 IT RM20010517A0 IT 2001RM000517 A IT2001RM000517 A IT 2001RM000517A IT RM20010517 A ITRM20010517 A IT RM20010517A IT RM20010517 A0 ITRM20010517 A0 IT RM20010517A0
Authority
IT
Italy
Prior art keywords
polysilic
integrated
capacitor structure
capacitor
polysilic capacitor
Prior art date
Application number
IT2001RM000517A
Other languages
English (en)
Inventor
Giulio Marotta
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT2001RM000517A priority Critical patent/ITRM20010517A1/it
Publication of ITRM20010517A0 publication Critical patent/ITRM20010517A0/it
Priority to US10/228,823 priority patent/US6897511B2/en
Publication of ITRM20010517A1 publication Critical patent/ITRM20010517A1/it
Priority to US10/921,463 priority patent/US7238981B2/en
Priority to US10/921,396 priority patent/US7009241B2/en
Priority to US11/211,202 priority patent/US20050280049A1/en
Priority to US11/478,016 priority patent/US20060244039A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222—Charge pumping, substrate bias generation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT2001RM000517A 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio. ITRM20010517A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT2001RM000517A ITRM20010517A1 (it) 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio.
US10/228,823 US6897511B2 (en) 2001-08-29 2002-08-27 Metal-poly integrated capacitor structure
US10/921,463 US7238981B2 (en) 2001-08-29 2004-08-19 Metal-poly integrated capacitor structure
US10/921,396 US7009241B2 (en) 2001-08-29 2004-08-19 Metal-poly integrated capacitor structure
US11/211,202 US20050280049A1 (en) 2001-08-29 2005-08-25 Metal-poly integrated capacitor structure
US11/478,016 US20060244039A1 (en) 2001-08-29 2006-06-29 Metal-poly integrated capacitor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001RM000517A ITRM20010517A1 (it) 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio.

Publications (2)

Publication Number Publication Date
ITRM20010517A0 true ITRM20010517A0 (it) 2001-08-29
ITRM20010517A1 ITRM20010517A1 (it) 2003-02-28

Family

ID=11455750

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001RM000517A ITRM20010517A1 (it) 2001-08-29 2001-08-29 Struttura di condensatore integrato di polisilicio.

Country Status (2)

Country Link
US (5) US6897511B2 (it)
IT (1) ITRM20010517A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4105421B2 (ja) * 2001-10-31 2008-06-25 株式会社日立製作所 固体高分子型燃料電池用電極及びそれを用いた固体高分子型燃料電池並びに発電システム
TW556262B (en) * 2002-10-24 2003-10-01 Nanya Technology Corp A leakage control circuit and a DRAM with a leakage control circuit
KR100672673B1 (ko) * 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 커패시터 구조 및 그 제조방법
US7838919B2 (en) * 2007-03-29 2010-11-23 Panasonic Corporation Capacitor structure
US20090187701A1 (en) * 2008-01-22 2009-07-23 Jin-Ki Kim Nand flash memory access with relaxed timing constraints
EP2166655B1 (en) * 2008-09-23 2016-08-31 ams AG Controlled charge pump arrangement and method for controlling a clocked charge pump
US8154333B2 (en) * 2009-04-01 2012-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump circuits, systems, and operational methods thereof
US8120411B1 (en) * 2009-07-31 2012-02-21 Altera Corporation Charge pump with ramp rate control
US20110032027A1 (en) * 2009-08-05 2011-02-10 Texas Instruments Incorporated Switched bandgap reference circuit for retention mode
US9270247B2 (en) 2013-11-27 2016-02-23 Xilinx, Inc. High quality factor inductive and capacitive circuit structure
US9524964B2 (en) 2014-08-14 2016-12-20 Xilinx, Inc. Capacitor structure in an integrated circuit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234855A (en) 1990-12-21 1993-08-10 Micron Technology, Inc. Stacked comb spacer capacitor
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
US6088258A (en) * 1998-05-28 2000-07-11 International Business Machines Corporation Structures for reduced topography capacitors
US6146939A (en) * 1998-09-18 2000-11-14 Tritech Microelectronics, Ltd. Metal-polycrystalline silicon-N-well multiple layered capacitor
US6240033B1 (en) 1999-01-11 2001-05-29 Hyundai Electronics Industries Co., Ltd. Antifuse circuitry for post-package DRAM repair
US6383858B1 (en) * 2000-02-16 2002-05-07 Agere Systems Guardian Corp. Interdigitated capacitor structure for use in an integrated circuit
US6385033B1 (en) * 2000-09-29 2002-05-07 Intel Corporation Fingered capacitor in an integrated circuit
EP1346467B1 (en) 2000-11-29 2010-02-10 Broadcom Corporation Integrated direct conversion satellite tuner
US6410955B1 (en) 2001-04-19 2002-06-25 Micron Technology, Inc. Comb-shaped capacitor for use in integrated circuits

Also Published As

Publication number Publication date
US20060039208A1 (en) 2006-02-23
ITRM20010517A1 (it) 2003-02-28
US20050017791A1 (en) 2005-01-27
US6897511B2 (en) 2005-05-24
US7238981B2 (en) 2007-07-03
US7009241B2 (en) 2006-03-07
US20030058693A1 (en) 2003-03-27
US20050280049A1 (en) 2005-12-22
US20060244039A1 (en) 2006-11-02

Similar Documents

Publication Publication Date Title
ITTO20020697A1 (it) Struttura di ruota.
DE60130927D1 (de) Kondensator
NO20040654L (no) Gassmikrosfaere-liposomkompositter.
DE60221403D1 (de) Doppelstrom - verdichter
ATE491886T1 (de) Spaltrohrpumpe
ITRM20010517A0 (it) Struttura di condensatore integrato di polisilicio.
DE60210287D1 (de) Pumpenanordnung
NO20040387L (no) Nedihullsfrigjoringskopling.
DE50201649D1 (de) Kondensator
DE50214583D1 (de) Förderpumpe
BR0103827B1 (pt) cola - pds.
ITMI20021852A1 (it) Dispositivo di aspirazione.
ES1049973Y (es) Maqueta-belen plegable.
ES1050491Y (es) Chupete infantil.
BR8101236Y1 (pt) desensiladeira.
DE50202671D1 (de) Förderpumpe
ITTO20010224V0 (it) Struttura di serratura.
ES1048703Y (es) Conversor.
ES1051741Y (es) Caja-envase.
ES1050980Y (es) Portalamparas.
ES1049298Y (es) Embalaje-expositor.
ES1053113Y (es) Tenedor-expulsor.
ES1048140Y (es) Calcetin-zapato.
ITBN20010001U1 (it) Distanziatore -dc z3- car-zaottini.
ITRM20010044U1 (it) Bloccaprosciutto.