ITMI20042245A1 - MOS POWER ELECTRONIC DEVICE WITH CONTROLLED SWITCHING - Google Patents

MOS POWER ELECTRONIC DEVICE WITH CONTROLLED SWITCHING

Info

Publication number
ITMI20042245A1
ITMI20042245A1 IT002245A ITMI20042245A ITMI20042245A1 IT MI20042245 A1 ITMI20042245 A1 IT MI20042245A1 IT 002245 A IT002245 A IT 002245A IT MI20042245 A ITMI20042245 A IT MI20042245A IT MI20042245 A1 ITMI20042245 A1 IT MI20042245A1
Authority
IT
Italy
Prior art keywords
electronic device
power electronic
controlled switching
mos power
mos
Prior art date
Application number
IT002245A
Other languages
Italian (it)
Inventor
Gaetano Bazzano
Giuseppe Ferla
Ferruccio Frisina
Antonio Grimaldi
Angelo Magri
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT002245A priority Critical patent/ITMI20042245A1/en
Publication of ITMI20042245A1 publication Critical patent/ITMI20042245A1/en
Priority to EP05025285A priority patent/EP1659636B1/en
Priority to DE602005017457T priority patent/DE602005017457D1/en
Priority to US11/285,759 priority patent/US7569883B2/en
Priority to US11/285,741 priority patent/US7875936B2/en
Priority to US12/967,845 priority patent/US8420487B2/en
Priority to US12/967,861 priority patent/US8482085B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
IT002245A 2004-11-19 2004-11-19 MOS POWER ELECTRONIC DEVICE WITH CONTROLLED SWITCHING ITMI20042245A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT002245A ITMI20042245A1 (en) 2004-11-19 2004-11-19 MOS POWER ELECTRONIC DEVICE WITH CONTROLLED SWITCHING
EP05025285A EP1659636B1 (en) 2004-11-19 2005-11-18 Power MOS semiconductor device
DE602005017457T DE602005017457D1 (en) 2004-11-19 2005-11-18 MOS power semiconductor device
US11/285,759 US7569883B2 (en) 2004-11-19 2005-11-21 Switching-controlled power MOS electronic device
US11/285,741 US7875936B2 (en) 2004-11-19 2005-11-21 Power MOS electronic device and corresponding realizing method
US12/967,845 US8420487B2 (en) 2004-11-19 2010-12-14 Power MOS electronic device and corresponding realizing method
US12/967,861 US8482085B2 (en) 2004-11-19 2010-12-14 Power MOS electronic device and corresponding realizing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002245A ITMI20042245A1 (en) 2004-11-19 2004-11-19 MOS POWER ELECTRONIC DEVICE WITH CONTROLLED SWITCHING

Publications (1)

Publication Number Publication Date
ITMI20042245A1 true ITMI20042245A1 (en) 2005-02-19

Family

ID=35589628

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002245A ITMI20042245A1 (en) 2004-11-19 2004-11-19 MOS POWER ELECTRONIC DEVICE WITH CONTROLLED SWITCHING

Country Status (3)

Country Link
EP (1) EP1659636B1 (en)
DE (1) DE602005017457D1 (en)
IT (1) ITMI20042245A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8664713B2 (en) 2008-12-31 2014-03-04 Stmicroelectronics S.R.L. Integrated power device on a semiconductor substrate having an improved trench gate structure
JP2024009766A (en) 2022-07-11 2024-01-23 エスティーマイクロエレクトロニクス エス．アール．エル． Power mosfet device with improved isolated gate structure and manufacturing process thereof

Also Published As

Publication number Publication date
EP1659636A1 (en) 2006-05-24
DE602005017457D1 (en) 2009-12-17
EP1659636B1 (en) 2009-11-04

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