ITMI20040309A1 - Pompa di carica con migliorata polarizzazione delle regioni di body dei pass-transistor - Google Patents

Pompa di carica con migliorata polarizzazione delle regioni di body dei pass-transistor

Info

Publication number
ITMI20040309A1
ITMI20040309A1 IT000309A ITMI20040309A ITMI20040309A1 IT MI20040309 A1 ITMI20040309 A1 IT MI20040309A1 IT 000309 A IT000309 A IT 000309A IT MI20040309 A ITMI20040309 A IT MI20040309A IT MI20040309 A1 ITMI20040309 A1 IT MI20040309A1
Authority
IT
Italy
Prior art keywords
pass
charge pump
body regions
transistor body
improved polarization
Prior art date
Application number
IT000309A
Other languages
English (en)
Inventor
Gaetano Palumbo
Domenico Pappalardo
Carmelo Ucciardello
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000309A priority Critical patent/ITMI20040309A1/it
Publication of ITMI20040309A1 publication Critical patent/ITMI20040309A1/it
Priority to US11/066,105 priority patent/US7224206B2/en

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/078—Charge pumps of the Schenkel-type with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
IT000309A 2004-02-24 2004-02-24 Pompa di carica con migliorata polarizzazione delle regioni di body dei pass-transistor ITMI20040309A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT000309A ITMI20040309A1 (it) 2004-02-24 2004-02-24 Pompa di carica con migliorata polarizzazione delle regioni di body dei pass-transistor
US11/066,105 US7224206B2 (en) 2004-02-24 2005-02-24 Charge-pump with improved biasing of the body regions of the pass-transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000309A ITMI20040309A1 (it) 2004-02-24 2004-02-24 Pompa di carica con migliorata polarizzazione delle regioni di body dei pass-transistor

Publications (1)

Publication Number Publication Date
ITMI20040309A1 true ITMI20040309A1 (it) 2004-05-24

Family

ID=34917537

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000309A ITMI20040309A1 (it) 2004-02-24 2004-02-24 Pompa di carica con migliorata polarizzazione delle regioni di body dei pass-transistor

Country Status (2)

Country Link
US (1) US7224206B2 (it)
IT (1) ITMI20040309A1 (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI263404B (en) * 2005-03-30 2006-10-01 Novatek Microelectronics Corp Electronic switch and the operating method of transistor
SG130050A1 (en) * 2005-08-26 2007-03-20 Bluechips Technology Pte Ltd A high voltage charge pump with wide range of supply voltage
US7342438B2 (en) * 2006-06-29 2008-03-11 Intel Corporation N-channel negative charge pump
US8232833B2 (en) * 2007-05-23 2012-07-31 Silicon Storage Technology, Inc. Charge pump systems and methods
US8035484B2 (en) * 2007-05-31 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and IC label, IC tag, and IC card provided with the semiconductor device
US20090066407A1 (en) * 2007-09-12 2009-03-12 Rochester Institute Of Technology Charge pump systems and methods thereof
EP2178197B1 (en) * 2008-10-20 2017-07-05 Dialog Semiconductor GmbH HVPMOS switched capacitor charage pump having ideal charge transfer
US7760007B2 (en) * 2008-12-11 2010-07-20 Nuvoton Technology Corporation Low voltage analog CMOS switch
EP2293446B1 (en) * 2009-09-03 2011-11-09 Austriamicrosystems AG Coupling circuit, driver circuit and method for controlling a coupling circuit
KR101625935B1 (ko) 2010-01-05 2016-05-31 삼성전자주식회사 차지 펌프 회로와 이를 포함하는 장치들
CN102075102B (zh) * 2011-02-24 2013-05-15 成都芯源系统有限公司 桥式整流电路
US9735671B2 (en) 2013-05-17 2017-08-15 Cirrus Logic, Inc. Charge pump-based drive circuitry for bipolar junction transistor (BJT)-based power supply
WO2014186765A1 (en) 2013-05-17 2014-11-20 Cirrus Logic, Inc. Single pin control of bipolar junction transistor (bjt)-based power stage
WO2015017315A1 (en) 2013-07-29 2015-02-05 Cirrus Logic, Inc. Compensating for a reverse recovery time period of a bipolar junction transistor (bjt) in switch-mode operation of a light-emitting diode (led)-based bulb
WO2015017317A2 (en) 2013-07-29 2015-02-05 Cirrus Logic, Inc. Two terminal drive of bipolar junction transistor (bjt) for switch-mode operation of a light emitting diode (led)-based bulb
US9634559B2 (en) 2014-02-07 2017-04-25 The Hong Kong University Of Science And Technology Charge pumping apparatus for low voltage and high efficiency operation
US9504118B2 (en) 2015-02-17 2016-11-22 Cirrus Logic, Inc. Resistance measurement of a resistor in a bipolar junction transistor (BJT)-based power stage
US9609701B2 (en) 2015-02-27 2017-03-28 Cirrus Logic, Inc. Switch-mode drive sensing of reverse recovery in bipolar junction transistor (BJT)-based power converters
US9603206B2 (en) 2015-02-27 2017-03-21 Cirrus Logic, Inc. Detection and control mechanism for tail current in a bipolar junction transistor (BJT)-based power stage
JP2019092303A (ja) * 2017-11-15 2019-06-13 ローム株式会社 負昇圧チャージポンプ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5767733A (en) * 1996-09-20 1998-06-16 Integrated Device Technology, Inc. Biasing circuit for reducing body effect in a bi-directional field effect transistor
US6130574A (en) * 1997-01-24 2000-10-10 Siemens Aktiengesellschaft Circuit configuration for producing negative voltages, charge pump having at least two circuit configurations and method of operating a charge pump
US6448841B1 (en) * 1998-05-01 2002-09-10 Texas Instruments Incorporated Efficiency charge pump circuit
DE19953882C2 (de) * 1999-11-09 2001-10-18 Infineon Technologies Ag Ladungspumpe zum Erzeugen von hohen Spannungen für Halbleiterschaltungen
US6377112B1 (en) * 2000-12-05 2002-04-23 Semiconductor Components Industries Llc Circuit and method for PMOS device N-well bias control
EP1223663A1 (en) * 2001-01-10 2002-07-17 Koninklijke Philips Electronics N.V. Local supply generator for a digital CMOS integrated circuit having an analog signal processing circuitry
US6965263B2 (en) * 2002-10-10 2005-11-15 Micron Technology, Inc. Bulk node biasing method and apparatus
US6878981B2 (en) * 2003-03-20 2005-04-12 Tower Semiconductor Ltd. Triple-well charge pump stage with no threshold voltage back-bias effect

Also Published As

Publication number Publication date
US7224206B2 (en) 2007-05-29
US20050200399A1 (en) 2005-09-15

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