IT993265B - TYRISTOR WITH AT LEAST THREE JUNCTIONS P N - Google Patents

TYRISTOR WITH AT LEAST THREE JUNCTIONS P N

Info

Publication number
IT993265B
IT993265B IT2901073A IT2901073A IT993265B IT 993265 B IT993265 B IT 993265B IT 2901073 A IT2901073 A IT 2901073A IT 2901073 A IT2901073 A IT 2901073A IT 993265 B IT993265 B IT 993265B
Authority
IT
Italy
Prior art keywords
tyristor
junctions
Prior art date
Application number
IT2901073A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722246979 external-priority patent/DE2246979C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT993265B publication Critical patent/IT993265B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
IT2901073A 1972-09-25 1973-09-18 TYRISTOR WITH AT LEAST THREE JUNCTIONS P N IT993265B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722246979 DE2246979C3 (en) 1972-09-25 Thyristor

Publications (1)

Publication Number Publication Date
IT993265B true IT993265B (en) 1975-09-30

Family

ID=5857313

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2901073A IT993265B (en) 1972-09-25 1973-09-18 TYRISTOR WITH AT LEAST THREE JUNCTIONS P N

Country Status (6)

Country Link
JP (1) JPS4971877A (en)
FR (1) FR2200627B1 (en)
GB (1) GB1448150A (en)
IT (1) IT993265B (en)
NL (1) NL7310720A (en)
SE (1) SE389226B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584467B2 (en) * 1975-05-23 1983-01-26 三菱電機株式会社 Hand tie souchi
DE3917100A1 (en) * 1989-05-26 1990-11-29 Eupec Gmbh & Co Kg THYRISTOR

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4118987Y1 (en) * 1965-07-16 1966-09-05
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon

Also Published As

Publication number Publication date
JPS4971877A (en) 1974-07-11
GB1448150A (en) 1976-09-02
NL7310720A (en) 1974-03-27
DE2246979B2 (en) 1977-04-14
DE2246979A1 (en) 1974-04-04
FR2200627A1 (en) 1974-04-19
SE389226B (en) 1976-10-25
FR2200627B1 (en) 1978-08-04

Similar Documents

Publication Publication Date Title
BR7300184D0 (en) IMPLANTATOR IMPROVEMENTS
FI53333C (en) TORKNINGSCYLINDERGRUPP I EN FLERCYLINDERTORK FOER EN MATERIALBANA I SYNNERHET FOER PAPPER
SE403917B (en) INLETSLADA
FI56896B (en) LUFTRIDAOANORDNING
FI53539C (en) ELEKTROSTATISK STOFTAVSKILJARE
IT984412B (en) ZIP
RO65609A (en) PORT-TOOL
SE402493B (en) SERIES ADDERER
BE808276R (en) ONTWIKKELVERSNELLERS
SE386870B (en) BERANORDNING
FI56271C (en) GRANATKASTARE FOER VINGSTABILISERADE PROJEKTILER
SE390896B (en) CENTRIFUGROTORAGGREGAT
IT985974B (en) ZIP
FI55803B (en) DUBBELARMADKRAN
RO67459A (en) Shearer-LOADER
SE381719B (en) TURNING MANUVER
TR18355A (en) CYANPHENYLCARBONATE
IT993265B (en) TYRISTOR WITH AT LEAST THREE JUNCTIONS P N
IT987386B (en) FABRICS COVERED WITH POLIU RETANI
FI55561B (en) OEVERLADDAD FOERBRAENNINGSMOTOR I SYNNERHET OEVERLADDAD DIESELMOTOR
FI55049C (en) RAOVARUBLANDNING FOER TVAETT- OCH RENGOERINGSMEDEL
FI55368B (en) UTVINNINGSSYSTEM FOER KEMIKALIER
SE7511681L (en) N-ALKYL-N-O-TOLYLANTRANILONITRIL
BE801571A (en) CHLORONITROBENZENESULFAMIDES
FI56543B (en) FOERFARANDE FOER FRAMSTAELLNING I PASTAFRAMSTAELLNING ANVAENDBARA VINYLKLORIDKOPOLYMERISATPULVER