IT987106B - PROCEDURE FOR THE FORCED INSERTION OF IONS - Google Patents

PROCEDURE FOR THE FORCED INSERTION OF IONS

Info

Publication number
IT987106B
IT987106B IT23653/73A IT2365373A IT987106B IT 987106 B IT987106 B IT 987106B IT 23653/73 A IT23653/73 A IT 23653/73A IT 2365373 A IT2365373 A IT 2365373A IT 987106 B IT987106 B IT 987106B
Authority
IT
Italy
Prior art keywords
ions
procedure
forced insertion
forced
Prior art date
Application number
IT23653/73A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT987106B publication Critical patent/IT987106B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
IT23653/73A 1972-05-09 1973-05-03 PROCEDURE FOR THE FORCED INSERTION OF IONS IT987106B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722222736 DE2222736A1 (en) 1972-05-09 1972-05-09 METHOD OF ION IMPLANTATION

Publications (1)

Publication Number Publication Date
IT987106B true IT987106B (en) 1975-02-20

Family

ID=5844509

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23653/73A IT987106B (en) 1972-05-09 1973-05-03 PROCEDURE FOR THE FORCED INSERTION OF IONS

Country Status (10)

Country Link
US (1) US3909305A (en)
JP (1) JPS4962076A (en)
BE (1) BE799319A (en)
CA (1) CA1011228A (en)
CH (1) CH578891A5 (en)
DE (1) DE2222736A1 (en)
FR (1) FR2183853B1 (en)
IT (1) IT987106B (en)
LU (1) LU67556A1 (en)
NL (1) NL7306419A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179312A (en) * 1977-12-08 1979-12-18 International Business Machines Corporation Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
DE2835121A1 (en) * 1978-08-10 1980-02-14 Fraunhofer Ges Forschung Ion implantation doping of semiconductor - for diode, transistor or solar cell prodn. using simultaneous doping at front and back
EP0079931B1 (en) * 1981-05-26 1987-03-11 Hughes Aircraft Company Focused ion beam microfabrication column
WO1986006875A1 (en) * 1985-05-17 1986-11-20 J.C. Schumacher Company Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source
US4721683A (en) * 1987-05-21 1988-01-26 American Cyanamid Company Use of alkylphosphines and alkylarsines in ion implantation
US5063294A (en) * 1989-05-17 1991-11-05 Kabushiki Kaisha Kobe Seiko Sho Converged ion beam apparatus
JP2863962B2 (en) * 1992-04-10 1999-03-03 株式会社日立製作所 Ion implantation equipment
US5837568A (en) * 1995-12-12 1998-11-17 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor devices
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
US7361915B2 (en) * 2005-11-30 2008-04-22 Axcelis Technologies, Inc. Beam current stabilization utilizing gas feed control loop

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3558376A (en) * 1966-01-07 1971-01-26 Siemens Ag Method for controlled doping by gas of foreign substance into semiconductor materials
US3442725A (en) * 1966-05-05 1969-05-06 Motorola Inc Phosphorus diffusion system
US3437734A (en) * 1966-06-21 1969-04-08 Isofilm Intern Apparatus and method for effecting the restructuring of materials
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3737346A (en) * 1971-07-01 1973-06-05 Bell Telephone Labor Inc Semiconductor device fabrication using combination of energy beams for masking and impurity doping

Also Published As

Publication number Publication date
CH578891A5 (en) 1976-08-31
BE799319A (en) 1973-08-31
FR2183853A1 (en) 1973-12-21
DE2222736A1 (en) 1973-11-22
LU67556A1 (en) 1973-07-13
US3909305A (en) 1975-09-30
NL7306419A (en) 1973-11-13
CA1011228A (en) 1977-05-31
JPS4962076A (en) 1974-06-15
FR2183853B1 (en) 1977-02-11

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