IT982700B - Membria perfezionata - Google Patents

Membria perfezionata

Info

Publication number
IT982700B
IT982700B IT22599/73A IT2259973A IT982700B IT 982700 B IT982700 B IT 982700B IT 22599/73 A IT22599/73 A IT 22599/73A IT 2259973 A IT2259973 A IT 2259973A IT 982700 B IT982700 B IT 982700B
Authority
IT
Italy
Prior art keywords
membry
perfected
perfected membry
Prior art date
Application number
IT22599/73A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT982700B publication Critical patent/IT982700B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356008Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
IT22599/73A 1972-06-29 1973-04-05 Membria perfezionata IT982700B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26773072A 1972-06-29 1972-06-29

Publications (1)

Publication Number Publication Date
IT982700B true IT982700B (it) 1974-10-21

Family

ID=23019919

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22599/73A IT982700B (it) 1972-06-29 1973-04-05 Membria perfezionata

Country Status (11)

Country Link
US (1) US3757313A (ja)
JP (1) JPS4945647A (ja)
AT (1) AT334662B (ja)
AU (1) AU470787B2 (ja)
CA (1) CA997470A (ja)
CH (1) CH549257A (ja)
FR (1) FR2191194B1 (ja)
GB (1) GB1390330A (ja)
IT (1) IT982700B (ja)
NL (1) NL7307301A (ja)
SE (1) SE398569B (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2360887C3 (de) * 1973-12-06 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Komplementär-Speicherelement und Verfahren zum Betrieb desselben
US4125854A (en) * 1976-12-02 1978-11-14 Mostek Corporation Symmetrical cell layout for static RAM
JPS5818717B2 (ja) * 1977-12-16 1983-04-14 幸田 学 埋込みパタ−ンを回帰させ得るリカレント・リ−ド・ライト・メモリ−
US4845674A (en) * 1984-01-11 1989-07-04 Honeywell, Inc. Semiconductor memory cell including cross-coupled bipolar transistors and Schottky diodes
JPS61104391A (ja) * 1984-10-23 1986-05-22 Fujitsu Ltd 半導体記憶装置
JPS61117794A (ja) * 1984-11-13 1986-06-05 Fujitsu Ltd 不揮発性半導体記憶装置
US4858182A (en) * 1986-12-19 1989-08-15 Texas Instruments Incorporated High speed zero power reset circuit for CMOS memory cells
US4841485A (en) * 1987-11-05 1989-06-20 International Business Machines Corporation Read/write memory device with an embedded read-only pattern and method for providing same
US5159571A (en) * 1987-12-29 1992-10-27 Hitachi, Ltd. Semiconductor memory with a circuit for testing characteristics of flip-flops including selectively applied power supply voltages
US5325325A (en) * 1990-03-30 1994-06-28 Sharp Kabushiki Kaisha Semiconductor memory device capable of initializing storage data
JPH0745077A (ja) * 1993-08-02 1995-02-14 Nec Corp 記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3530443A (en) * 1968-11-27 1970-09-22 Fairchild Camera Instr Co Mos gated resistor memory cell
BE755189A (fr) * 1969-08-25 1971-02-24 Shell Int Research Agencement de memoire a courant continu
US3618052A (en) * 1969-12-05 1971-11-02 Cogar Corp Bistable memory with predetermined turn-on state
US3662351A (en) * 1970-03-30 1972-05-09 Ibm Alterable-latent image monolithic memory

Also Published As

Publication number Publication date
JPS4945647A (ja) 1974-05-01
ATA514373A (de) 1976-05-15
AU5559673A (en) 1974-11-14
US3757313A (en) 1973-09-04
GB1390330A (en) 1975-04-09
FR2191194A1 (ja) 1974-02-01
FR2191194B1 (ja) 1976-05-28
DE2329307A1 (de) 1974-01-17
CA997470A (en) 1976-09-21
AT334662B (de) 1976-01-25
NL7307301A (ja) 1974-01-02
CH549257A (de) 1974-05-15
SE398569B (sv) 1977-12-27
DE2329307B2 (de) 1976-01-29
AU470787B2 (en) 1976-03-25

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