IT976999B - Perfezionamento nei circuiti di pilotaggio di strobe comprendenti circuiti di memoria - Google Patents
Perfezionamento nei circuiti di pilotaggio di strobe comprendenti circuiti di memoriaInfo
- Publication number
- IT976999B IT976999B IT47826/73A IT4782673A IT976999B IT 976999 B IT976999 B IT 976999B IT 47826/73 A IT47826/73 A IT 47826/73A IT 4782673 A IT4782673 A IT 4782673A IT 976999 B IT976999 B IT 976999B
- Authority
- IT
- Italy
- Prior art keywords
- circuits
- strobe
- improvement
- piloting
- including memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Dram (AREA)
- Shift Register Type Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24418572A | 1972-04-14 | 1972-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT976999B true IT976999B (it) | 1974-09-10 |
Family
ID=22921704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT47826/73A IT976999B (it) | 1972-04-14 | 1973-01-22 | Perfezionamento nei circuiti di pilotaggio di strobe comprendenti circuiti di memoria |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3798616A (it) |
| JP (1) | JPS5516343B2 (it) |
| CA (1) | CA977066A (it) |
| FR (1) | FR2179717A1 (it) |
| GB (1) | GB1382931A (it) |
| IT (1) | IT976999B (it) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1375958A (en) * | 1972-06-29 | 1974-12-04 | Ibm | Pulse circuit |
| JPS50153830A (it) * | 1974-05-30 | 1975-12-11 | ||
| JPS5133698U (it) * | 1974-09-05 | 1976-03-12 | ||
| CA1054713A (en) * | 1974-09-23 | 1979-05-15 | John R. Spence | Memory cell driver |
| CH609200B (fr) * | 1975-08-08 | Ebauches Sa | Dispositif pour maintenir dans un etat determine le potentiel electrique d'un point d'un circuit electronique. | |
| US4404660A (en) * | 1980-05-23 | 1983-09-13 | National Semiconductor Corporation | Circuit and method for dynamically adjusting the voltages of data lines in an addressable memory circuit |
| US4547867A (en) * | 1980-10-01 | 1985-10-15 | Intel Corporation | Multiple bit dynamic random-access memory |
| US4539354A (en) * | 1981-07-06 | 1985-09-03 | Allied Corporation | Stabilized ethylene/chlorotrifluoroethylene copolymer composition |
| US4707808A (en) * | 1985-04-26 | 1987-11-17 | Rockwell International Corporation | Small size, high speed GaAs data latch |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3373295A (en) * | 1965-04-27 | 1968-03-12 | Aerojet General Co | Memory element |
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| US3535699A (en) * | 1968-01-15 | 1970-10-20 | Ibm | Complenmentary transistor memory cell using leakage current to sustain quiescent condition |
| US3576571A (en) * | 1969-01-07 | 1971-04-27 | North American Rockwell | Memory circuit using storage capacitance and field effect devices |
| JPS498216A (it) * | 1972-05-11 | 1974-01-24 |
-
1972
- 1972-04-14 US US00244185A patent/US3798616A/en not_active Expired - Lifetime
- 1972-12-14 CA CA159,103A patent/CA977066A/en not_active Expired
-
1973
- 1973-01-19 GB GB295073A patent/GB1382931A/en not_active Expired
- 1973-01-22 FR FR7302178A patent/FR2179717A1/fr not_active Withdrawn
- 1973-01-22 IT IT47826/73A patent/IT976999B/it active
- 1973-03-23 JP JP3400673A patent/JPS5516343B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4918234A (it) | 1974-02-18 |
| US3798616A (en) | 1974-03-19 |
| JPS5516343B2 (it) | 1980-05-01 |
| GB1382931A (en) | 1975-02-05 |
| FR2179717A1 (it) | 1973-11-23 |
| DE2303786B2 (de) | 1976-06-24 |
| DE2303786A1 (de) | 1973-10-25 |
| CA977066A (en) | 1975-10-28 |
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