IT968869B - Dispositivo semiconduttore utiliz zante un circuito darlington - Google Patents

Dispositivo semiconduttore utiliz zante un circuito darlington

Info

Publication number
IT968869B
IT968869B IT30377/72A IT3037772A IT968869B IT 968869 B IT968869 B IT 968869B IT 30377/72 A IT30377/72 A IT 30377/72A IT 3037772 A IT3037772 A IT 3037772A IT 968869 B IT968869 B IT 968869B
Authority
IT
Italy
Prior art keywords
darlington circuit
semiconducting device
semiconducting
darlington
circuit
Prior art date
Application number
IT30377/72A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT968869B publication Critical patent/IT968869B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
IT30377/72A 1971-11-18 1972-10-11 Dispositivo semiconduttore utiliz zante un circuito darlington IT968869B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19988071A 1971-11-18 1971-11-18

Publications (1)

Publication Number Publication Date
IT968869B true IT968869B (it) 1974-03-20

Family

ID=22739396

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30377/72A IT968869B (it) 1971-11-18 1972-10-11 Dispositivo semiconduttore utiliz zante un circuito darlington

Country Status (8)

Country Link
US (1) US3751726A (it)
JP (1) JPS5118783B2 (it)
BE (1) BE791487A (it)
CA (1) CA967289A (it)
DE (1) DE2255676C2 (it)
FR (1) FR2160545B1 (it)
GB (1) GB1397086A (it)
IT (1) IT968869B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7312547A (nl) * 1973-09-12 1975-03-14 Philips Nv Halfgeleiderinrichting, werkwijze ter vervaardiging daarvan en schakeling bevattende de inrichting.
US3836997A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3909700A (en) * 1974-01-18 1975-09-30 Gen Electric Monolithic semiconductor rectifier circuit structure
JPS5419828Y2 (it) * 1974-07-18 1979-07-20
FR2297495A1 (fr) * 1975-01-10 1976-08-06 Radiotechnique Compelec Structure de transistors complementaires et son procede de fabrication
GB1488958A (en) * 1975-03-25 1977-10-19 Texas Instruments Ltd Fast switching darlington circuit
JPS5210662A (en) * 1975-07-16 1977-01-27 Matsushita Electric Ind Co Ltd Semi-conductor circuit
US4097887A (en) * 1976-09-13 1978-06-27 General Electric Company Low resistance, durable gate contact pad for thyristors
DE2718644C2 (de) * 1977-04-27 1979-07-12 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
US4243952A (en) * 1978-10-30 1981-01-06 Rca Corporation Temperature compensated bias circuit for semiconductor lasers
FR2527008A1 (fr) * 1982-05-14 1983-11-18 Thomson Csf Structure semiconductrice de type mesa associant une diode et un transistor de types transverses en antiparallele
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
JP2714969B2 (ja) * 1989-01-13 1998-02-16 マツダ株式会社 自動車のサスペンション装置
US5541439A (en) * 1994-11-17 1996-07-30 Xerox Corporation Layout for a high voltage darlington pair

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL260481A (it) * 1960-02-08
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device

Also Published As

Publication number Publication date
FR2160545B1 (it) 1980-08-14
CA967289A (en) 1975-05-06
DE2255676A1 (de) 1973-05-24
FR2160545A1 (it) 1973-06-29
JPS5118783B2 (it) 1976-06-12
BE791487A (fr) 1973-03-16
GB1397086A (en) 1975-06-11
DE2255676C2 (de) 1985-04-04
US3751726A (en) 1973-08-07
JPS4863685A (it) 1973-09-04

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