IT956633B - Struttura circuitale per la soppres sione automatica della registrazio ne - Google Patents

Struttura circuitale per la soppres sione automatica della registrazio ne

Info

Publication number
IT956633B
IT956633B IT25760/72A IT2576072A IT956633B IT 956633 B IT956633 B IT 956633B IT 25760/72 A IT25760/72 A IT 25760/72A IT 2576072 A IT2576072 A IT 2576072A IT 956633 B IT956633 B IT 956633B
Authority
IT
Italy
Prior art keywords
recording
circuit structure
automatic cancellation
cancellation
automatic
Prior art date
Application number
IT25760/72A
Other languages
English (en)
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712135625 external-priority patent/DE2135625C/de
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT956633B publication Critical patent/IT956633B/it

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/037Bistable circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H03K3/2885Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit the input circuit having a differential configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
IT25760/72A 1971-07-16 1972-06-16 Struttura circuitale per la soppres sione automatica della registrazio ne IT956633B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712135625 DE2135625C (de) 1971-07-16 Schaltungsanordnung zur automa tischen Schreib Unterdrückung

Publications (1)

Publication Number Publication Date
IT956633B true IT956633B (it) 1973-10-10

Family

ID=5813914

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25760/72A IT956633B (it) 1971-07-16 1972-06-16 Struttura circuitale per la soppres sione automatica della registrazio ne

Country Status (15)

Country Link
US (1) US3801965A (cg-RX-API-DMAC10.html)
JP (1) JPS5235499B1 (cg-RX-API-DMAC10.html)
AR (1) AR193884A1 (cg-RX-API-DMAC10.html)
AT (1) AT319637B (cg-RX-API-DMAC10.html)
AU (1) AU470472B2 (cg-RX-API-DMAC10.html)
BR (1) BR7204708D0 (cg-RX-API-DMAC10.html)
CA (1) CA986231A (cg-RX-API-DMAC10.html)
CH (1) CH533888A (cg-RX-API-DMAC10.html)
DE (1) DE2135625B1 (cg-RX-API-DMAC10.html)
ES (1) ES404058A1 (cg-RX-API-DMAC10.html)
FR (1) FR2146241B1 (cg-RX-API-DMAC10.html)
GB (1) GB1371686A (cg-RX-API-DMAC10.html)
IT (1) IT956633B (cg-RX-API-DMAC10.html)
NL (1) NL166813C (cg-RX-API-DMAC10.html)
SE (1) SE384755B (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090258A (en) * 1976-12-29 1978-05-16 Westinghouse Electric Corp. MNOS non-volatile memory with write cycle suppression
DE2707297B1 (de) * 1977-02-19 1978-05-24 Felten & Guilleaume Carlswerk Verfahren zur Herstellung einer isolierenden Umhuellung aus vernetztem Isolierstoff
US4149270A (en) * 1977-09-26 1979-04-10 Westinghouse Electric Corp. Variable threshold device memory circuit having automatic refresh feature
US4224533A (en) * 1978-08-07 1980-09-23 Signetics Corporation Edge triggered flip flop with multiple clocked functions
FR2443723A1 (fr) * 1978-12-06 1980-07-04 Cii Honeywell Bull Dispositif de reduction du temps d'acces aux informations contenues dans une memoire d'un systeme de traitement de l'information
DE2926514A1 (de) * 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
US4535428A (en) * 1983-03-10 1985-08-13 International Business Machines Corporation Multi-port register implementations
US4616347A (en) * 1983-05-31 1986-10-07 International Business Machines Corporation Multi-port system
US4577292A (en) * 1983-05-31 1986-03-18 International Business Machines Corporation Support circuitry for multi-port systems
US4558433A (en) * 1983-05-31 1985-12-10 International Business Machines Corporation Multi-port register implementations
US6002614A (en) * 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2876352A (en) * 1955-12-27 1959-03-03 Bell Telephone Labor Inc Self-correcting pulse circuits
US3008129A (en) * 1956-07-18 1961-11-07 Rca Corp Memory systems
US3311893A (en) * 1963-08-29 1967-03-28 Sperry Rand Corp Memory organization wherein only new data bits which are different from the old are recorded
US3413618A (en) * 1964-10-19 1968-11-26 Automatic Elect Lab Memory apparatus employing a plurality of digit registers
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3504350A (en) * 1966-01-11 1970-03-31 Sperry Rand Corp Flip-flop memory with minimized interconnection wiring

Also Published As

Publication number Publication date
FR2146241B1 (cg-RX-API-DMAC10.html) 1976-10-29
ES404058A1 (es) 1975-06-01
AU4341572A (en) 1973-12-20
DE2135625B1 (de) 1973-01-04
AR193884A1 (es) 1973-05-31
JPS5235499B1 (cg-RX-API-DMAC10.html) 1977-09-09
GB1371686A (en) 1974-10-23
AT319637B (de) 1974-12-27
NL166813B (nl) 1981-04-15
BR7204708D0 (pt) 1973-07-10
SE384755B (sv) 1976-05-17
NL166813C (nl) 1981-09-15
AU470472B2 (en) 1973-12-20
NL7209577A (cg-RX-API-DMAC10.html) 1973-01-18
CA986231A (en) 1976-03-23
US3801965A (en) 1974-04-02
FR2146241A1 (cg-RX-API-DMAC10.html) 1973-03-02
CH533888A (de) 1973-02-15

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