IT948656B - Perfezionamento nelle memorie ad accesso casuale adatte per la co struzione nella forma di circuiti integrati monolitici - Google Patents

Perfezionamento nelle memorie ad accesso casuale adatte per la co struzione nella forma di circuiti integrati monolitici

Info

Publication number
IT948656B
IT948656B IT48433/72A IT4843372A IT948656B IT 948656 B IT948656 B IT 948656B IT 48433/72 A IT48433/72 A IT 48433/72A IT 4843372 A IT4843372 A IT 4843372A IT 948656 B IT948656 B IT 948656B
Authority
IT
Italy
Prior art keywords
improvement
construction
random access
integrated circuits
access memories
Prior art date
Application number
IT48433/72A
Other languages
English (en)
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Application granted granted Critical
Publication of IT948656B publication Critical patent/IT948656B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
IT48433/72A 1971-03-05 1972-02-19 Perfezionamento nelle memorie ad accesso casuale adatte per la co struzione nella forma di circuiti integrati monolitici IT948656B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12137771A 1971-03-05 1971-03-05

Publications (1)

Publication Number Publication Date
IT948656B true IT948656B (it) 1973-06-11

Family

ID=22396312

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48433/72A IT948656B (it) 1971-03-05 1972-02-19 Perfezionamento nelle memorie ad accesso casuale adatte per la co struzione nella forma di circuiti integrati monolitici

Country Status (6)

Country Link
US (1) US3761898A (it)
JP (1) JPS5548394B1 (it)
CA (1) CA984054A (it)
FR (1) FR2128503B1 (it)
GB (1) GB1360738A (it)
IT (1) IT948656B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893088A (en) * 1971-07-19 1975-07-01 Texas Instruments Inc Random access memory shift register system
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
US3845471A (en) * 1973-05-14 1974-10-29 Westinghouse Electric Corp Classification of a subject
JPS5548704B2 (it) * 1973-06-01 1980-12-08
US3979735A (en) * 1973-12-13 1976-09-07 Rca Corporation Information storage circuit
IT1002271B (it) * 1973-12-27 1976-05-20 Honeywell Inf Systems Perfezionamento ai dispositivi di controllo di parita nelle memorie a semiconduttori
US3953866A (en) * 1974-05-10 1976-04-27 Signetics Corporation Cross coupled semiconductor memory cell
US4104719A (en) * 1976-05-20 1978-08-01 The United States Of America As Represented By The Secretary Of The Navy Multi-access memory module for data processing systems
US4193127A (en) * 1979-01-02 1980-03-11 International Business Machines Corporation Simultaneous read/write cell
US4292675A (en) * 1979-07-30 1981-09-29 International Business Machines Corp. Five device merged transistor RAM cell
US4280197A (en) * 1979-12-07 1981-07-21 Ibm Corporation Multiple access store
US4287575A (en) * 1979-12-28 1981-09-01 International Business Machines Corporation High speed high density, multi-port random access memory cell
JPS5998387A (ja) * 1982-11-26 1984-06-06 Nec Corp メモリ回路
US4554645A (en) * 1983-03-10 1985-11-19 International Business Machines Corporation Multi-port register implementation
US4663742A (en) * 1984-10-30 1987-05-05 International Business Machines Corporation Directory memory system having simultaneous write, compare and bypass capabilites
US4636990A (en) * 1985-05-31 1987-01-13 International Business Machines Corporation Three state select circuit for use in a data processing system or the like
JPH01110026A (ja) * 1987-10-22 1989-04-26 Mk Seiko Co Ltd 充電コントローラ付車載用バッテリ診断装置
US6067255A (en) * 1997-07-03 2000-05-23 Samsung Electronics Co., Ltd. Merged memory and logic (MML) integrated circuits including independent memory bank signals and methods
US7064416B2 (en) * 2001-11-16 2006-06-20 International Business Machines Corporation Semiconductor device and method having multiple subcollectors formed on a common wafer
US11968843B2 (en) * 2018-06-28 2024-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Processing core and MRAM memory unit integrated on a single chip

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3510849A (en) * 1965-08-09 1970-05-05 Nippon Electric Co Memory devices of the semiconductor type having high-speed readout means
US3549911A (en) * 1968-12-05 1970-12-22 Rca Corp Variable threshold level field effect memory device
US3675218A (en) * 1970-01-15 1972-07-04 Ibm Independent read-write monolithic memory array
US3704455A (en) * 1971-02-01 1972-11-28 Alfred D Scarbrough 3d-coaxial memory construction and method of making
JPS5126015A (it) * 1974-08-27 1976-03-03 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
DE2209426B2 (de) 1977-02-17
FR2128503B1 (it) 1977-07-15
GB1360738A (en) 1974-07-24
CA984054A (en) 1976-02-17
US3761898A (en) 1973-09-25
DE2265050B2 (de) 1977-02-24
DE2209426A1 (de) 1972-09-14
DE2265050A1 (de) 1976-04-22
JPS5548394B1 (it) 1980-12-05
FR2128503A1 (it) 1972-10-20

Similar Documents

Publication Publication Date Title
IT948656B (it) Perfezionamento nelle memorie ad accesso casuale adatte per la co struzione nella forma di circuiti integrati monolitici
IT1074790B (it) Perfezionamento nelle memorie mosfet ad accesso casuale
BE803317A (fr) Compositions rafraichissantes
NL175766C (nl) Geintegreerde geheugencel.
IT943139B (it) Dispositivo per la sbavatura di tu bi in plastica
IT1000776B (it) Perfezionamento nei mandrini ad espansione
IT1008041B (it) Perfezionamento nelle composizioni detergenti
IT942262B (it) Perfezionamento nei distributori di lamette
IT979967B (it) Perfezionamento nei circuiti logici integrati
IT1004028B (it) Composizione antitraspirante in forma di aerosol
IT953140B (it) Cassetta di ricezione estesa in lunghezza ed impilabile per let tere e consimili
NL153638B (nl) Expansiemachine van het trochoidale type.
AR203076A1 (es) Celula de memoria no volatil
SE387908B (sv) Profil, i synnerhet for bildande av plana plattor
AT334662B (de) Hochintegrierter halbleiterspeicher
AT297157B (de) Kaltwalz-Regelanordnung
IT1000046B (it) Composizioni per il finissaggio di superpoliammide lineare in filatura
CH535473A (de) Integrierter Festwertspeicher
CH527432A (de) Helogrammspeicher
IT961693B (it) Perfezionamento nelle memorie elettroniche
IT985123B (it) Perfezionamento nelle macchine per la rifinitura di ingranaggi
NL171753C (nl) Geintegreerd halfgeleidergeheugen.
IT1035517B (it) Perfezionamento nelle composizioni dentifricie
IT958244B (it) Perfezionamento nele memorie per la accumulazione di dati numerici
IT1044211B (it) Composizione cosmetica condizionata in forma di aerosol