IT944725B - STEAM TRANSPORT METHOD FOR GROWING CRYSTALS - Google Patents
STEAM TRANSPORT METHOD FOR GROWING CRYSTALSInfo
- Publication number
- IT944725B IT944725B IT53214/71A IT5321471A IT944725B IT 944725 B IT944725 B IT 944725B IT 53214/71 A IT53214/71 A IT 53214/71A IT 5321471 A IT5321471 A IT 5321471A IT 944725 B IT944725 B IT 944725B
- Authority
- IT
- Italy
- Prior art keywords
- transport method
- growing crystals
- steam transport
- steam
- crystals
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7844570A | 1970-10-05 | 1970-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT944725B true IT944725B (en) | 1973-04-20 |
Family
ID=22144070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT53214/71A IT944725B (en) | 1970-10-05 | 1971-10-01 | STEAM TRANSPORT METHOD FOR GROWING CRYSTALS |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3716405A (en) |
| JP (1) | JPS5221473B1 (en) |
| BE (1) | BE773445A (en) |
| CA (1) | CA952414A (en) |
| CH (1) | CH583587A5 (en) |
| DE (1) | DE2148851A1 (en) |
| FR (1) | FR2110956A5 (en) |
| GB (1) | GB1362827A (en) |
| IT (1) | IT944725B (en) |
| NL (1) | NL7113423A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2116194B1 (en) * | 1970-02-27 | 1974-09-06 | Labo Electronique Physique | |
| US3964940A (en) * | 1971-09-10 | 1976-06-22 | Plessey Handel Und Investments A.G. | Methods of producing gallium phosphide yellow light emitting diodes |
| US4001056A (en) * | 1972-12-08 | 1977-01-04 | Monsanto Company | Epitaxial deposition of iii-v compounds containing isoelectronic impurities |
| US4063974A (en) * | 1975-11-14 | 1977-12-20 | Hughes Aircraft Company | Planar reactive evaporation method for the deposition of compound semiconducting films |
| US4253887A (en) * | 1979-08-27 | 1981-03-03 | Rca Corporation | Method of depositing layers of semi-insulating gallium arsenide |
| US4316430A (en) * | 1980-09-30 | 1982-02-23 | Rca Corporation | Vapor phase deposition apparatus |
| US4468850A (en) * | 1982-03-29 | 1984-09-04 | Massachusetts Institute Of Technology | GaInAsP/InP Double-heterostructure lasers |
| TW498102B (en) * | 1998-12-28 | 2002-08-11 | Futaba Denshi Kogyo Kk | A process for preparing GaN fluorescent substance |
| CN110854013B (en) * | 2019-11-11 | 2022-07-26 | 中国科学院金属研究所 | Large-area continuous ultrathin two-dimensional Ga 2 O 3 Preparation method and application of amorphous film |
-
1970
- 1970-10-05 US US00078445A patent/US3716405A/en not_active Expired - Lifetime
-
1971
- 1971-08-04 CA CA119,780A patent/CA952414A/en not_active Expired
- 1971-09-30 DE DE19712148851 patent/DE2148851A1/en active Pending
- 1971-09-30 NL NL7113423A patent/NL7113423A/xx unknown
- 1971-09-30 GB GB4548571A patent/GB1362827A/en not_active Expired
- 1971-10-01 IT IT53214/71A patent/IT944725B/en active
- 1971-10-04 CH CH1441371A patent/CH583587A5/xx not_active IP Right Cessation
- 1971-10-04 BE BE773445A patent/BE773445A/en unknown
- 1971-10-04 FR FR7135641A patent/FR2110956A5/fr not_active Expired
- 1971-10-05 JP JP46077591A patent/JPS5221473B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BE773445A (en) | 1972-01-31 |
| JPS5221473B1 (en) | 1977-06-10 |
| CH583587A5 (en) | 1977-01-14 |
| CA952414A (en) | 1974-08-06 |
| NL7113423A (en) | 1972-04-07 |
| DE2148851A1 (en) | 1972-04-06 |
| US3716405A (en) | 1973-02-13 |
| GB1362827A (en) | 1974-08-07 |
| FR2110956A5 (en) | 1972-06-02 |
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