IT942603B - Elemento memorizzatore elettronico - Google Patents

Elemento memorizzatore elettronico

Info

Publication number
IT942603B
IT942603B IT70044/71A IT7004471A IT942603B IT 942603 B IT942603 B IT 942603B IT 70044/71 A IT70044/71 A IT 70044/71A IT 7004471 A IT7004471 A IT 7004471A IT 942603 B IT942603 B IT 942603B
Authority
IT
Italy
Prior art keywords
electronic
memorizer
memorizer element
electronic memorizer
Prior art date
Application number
IT70044/71A
Other languages
English (en)
Original Assignee
Messerschmitt Boelkow Blohm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Boelkow Blohm filed Critical Messerschmitt Boelkow Blohm
Application granted granted Critical
Publication of IT942603B publication Critical patent/IT942603B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Secondary Cells (AREA)
IT70044/71A 1970-10-09 1971-09-14 Elemento memorizzatore elettronico IT942603B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2049658A DE2049658C3 (de) 1970-10-09 1970-10-09 Elektronisches Speicherelement

Publications (1)

Publication Number Publication Date
IT942603B true IT942603B (it) 1973-04-02

Family

ID=5784649

Family Applications (1)

Application Number Title Priority Date Filing Date
IT70044/71A IT942603B (it) 1970-10-09 1971-09-14 Elemento memorizzatore elettronico

Country Status (4)

Country Link
DE (1) DE2049658C3 (it)
FR (1) FR2112279B1 (it)
GB (1) GB1319388A (it)
IT (1) IT942603B (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3813558A (en) * 1972-06-26 1974-05-28 Ibm Directional, non-volatile bistable resistor logic circuits
USRE40790E1 (en) * 1992-06-23 2009-06-23 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US5229326A (en) * 1992-06-23 1993-07-20 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US5753947A (en) * 1995-01-20 1998-05-19 Micron Technology, Inc. Very high-density DRAM cell structure and method for fabricating it
EP0835527B1 (en) * 1995-06-07 2001-08-16 Micron Technology, Inc. A stack/trench diode for use with a multi-state material in a non-volatile memory cell
US5879955A (en) 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5831276A (en) 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5837564A (en) * 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6025220A (en) * 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5814527A (en) * 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5985698A (en) * 1996-07-22 1999-11-16 Micron Technology, Inc. Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
US5789277A (en) 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US5812441A (en) * 1996-10-21 1998-09-22 Micron Technology, Inc. MOS diode for use in a non-volatile memory cell
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US5952671A (en) 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A (en) 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US6563156B2 (en) 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device

Also Published As

Publication number Publication date
DE2049658B2 (de) 1975-01-16
GB1319388A (en) 1973-06-06
DE2049658A1 (de) 1972-04-13
FR2112279B1 (it) 1974-05-10
DE2049658C3 (de) 1975-08-28
FR2112279A1 (it) 1972-06-16

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